CN111477720A - Passivated contact N-type back junction solar cell and preparation method thereof - Google Patents
Passivated contact N-type back junction solar cell and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims abstract description 42
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000005641 tunneling Effects 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- HFQYYLQEAIRLNE-UHFFFAOYSA-N O=[Si].O[N+]([O-])=O Chemical compound O=[Si].O[N+]([O-])=O HFQYYLQEAIRLNE-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000006798 recombination Effects 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention aims to disclose a passivation contact N-type back junction solar cell and a preparation method thereof, wherein the passivation contact N-type back junction solar cell comprises an N-type crystal silicon wafer, wherein the front surface of the N-type crystal silicon wafer is sequentially provided with an N + front surface field doping region, a front surface passivation antireflection layer and a metal contact electrode from inside to outside, and the back surface of the N-type crystal silicon wafer is sequentially provided with a tunneling oxide layer, a P + doped polycrystalline silicon region, a back surface passivation antireflection layer and a metal contact electrode from inside to outside; compared with the prior art, P + doped polycrystalline silicon is applied to the back of an N-type cell and used for passivating an emitter junction and a metal contact area, current carriers enter the doped P-type polycrystalline silicon layer through a tunneling oxide layer to realize selective transmission and collection, surface recombination of the emitter junction, especially recombination of the metal contact area, is greatly reduced by utilizing the excellent passivation performance of the polycrystalline silicon, the open voltage and the efficiency of the cell are improved, and the purpose of the invention is realized.
Description
Technical Field
The invention relates to a solar cell and a preparation method thereof, in particular to a passivated contact N-type back junction solar cell and a preparation method thereof.
Background
Compared with P-type silicon, N-type silicon has a long minority carrier lifetime, and thus, no light attenuation effect gradually becomes an object of interest for research structures and photovoltaic enterprises. Currently, the common N-type structure is a P + emitter junction on the front side, N-type silicon on the substrate, and N + back surface field on the back side. In general, a laminated structure of SiO2/Al2O3/SiNx is adopted for the P + diffusion layer, a laminated structure of SiO2/SiNx is adopted for the N + back surface field to serve as a passivation layer, and then fire through slurry is used for forming ohmic contact with the substrate. The passivation film below the metal can be damaged by the metallization based on the burn-through slurry technology, the silicon substrate below the metal electrode cannot be passivated, and meanwhile, the metal is in direct contact with the silicon to form very high recombination, so that the improvement of the battery efficiency is limited. Due to the continuous maturation of the technology of the P-type cell in the market and the rapid development of the diffusion and metallization paste technology thereof, the composition of the N + diffusion layer and the metal contact region of the emitter junction region is effectively reduced. For an N-type cell, the back field can be directly assisted by the technology of a P-type cell, so the main factors that restrict the efficiency of the N-type cell are P + diffusion layer passivation and metal contact recombination thereof.
In recent years, the passivation contact technology has attracted much attention in the field of crystalline silicon solar cells, wherein the efficiency of the cell prepared by the tunneling oxide passivation contact technology adopted by Fraunhofer in Germany reaches 25.7%. The passivation contact structure generally comprises a tunneling silicon dioxide layer and a polysilicon film superposed on the tunneling silicon dioxide layer, and the cell structure can not only passivate the surface of the cell, but also reduce the recombination of the metal contact region. Therefore, the combination of solar cells and passivation contact technology is a very promising direction of development. Most of the current passivation contact technology focuses on (N +) back passivation contact, and when the front side (P +) adopts the passivation contact technology, the short-circuit current of the solar cell is low due to the fact that the light absorption coefficient of polycrystalline silicon is large, and the difficulty in applying the passivation contact technology to the front side is large.
Therefore, there is a need for a passivated contact N-type back junction solar cell and a method for fabricating the same that solves the above-mentioned problems.
Disclosure of Invention
The invention aims to provide an N-type back junction solar cell with passivated contact and a preparation method thereof, aiming at the defects of the prior art, the surface recombination of an emitter junction, especially the recombination of a metal contact area, is greatly reduced by utilizing the excellent passivation performance of polycrystalline silicon, and the open voltage and the efficiency of the cell are improved.
The technical problem solved by the invention can be realized by adopting the following technical scheme:
in a first aspect, the invention provides a passivated contact N-type back junction solar cell, which is characterized by comprising an N-type crystal silicon wafer, wherein an N + front surface field doping region, a front surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the front surface of the N-type crystal silicon wafer from inside to outside, and a tunneling oxide layer, a P + doped polycrystalline silicon region, a back surface passivation antireflection layer and a metal contact electrode are sequentially arranged on the back surface of the N-type crystal silicon wafer from inside to outside; the tunneling oxide layer, the P + doped polycrystalline silicon region and the back surface passivation antireflection layer form an emitter junction of the N-type back junction solar cell and are located on the back surface of the N-type crystal silicon wafer.
In a second aspect, the present invention provides a method for preparing a passivated contact N-type back junction solar cell, comprising the following steps:
s1, carrying out surface texturing treatment on the N-type crystal silicon wafer, removing a damage layer by using NaOH or KOH alkaline solution, texturing, and forming pyramid-shaped textured surfaces with the thickness of 3-5um on two sides of the N-type crystal silicon wafer;
s2, oxidizing the surface of the N-type crystal silicon wafer, and forming an ultrathin tunneling oxide layer in a high-temperature thermal oxidation, nitric acid oxidation or ozone oxidation mode;
s3, depositing an intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer by adopting L PCVD equipment (low-pressure chemical vapor deposition) on the basis of the tunneling oxide layer;
s4, placing the N-type crystal silicon wafer into an industrialized boron diffusion furnace, performing boron diffusion on the intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer, and doping boron to form a P + doped layer;
s5, placing the N-type crystal silicon wafer after boron diffusion into an etching cleaning machine, cleaning the positive surface, and removing the borosilicate glass layer and the oxide layer on the front surface, wherein the etching depth is 0.3-0.5 um;
s6, implanting phosphorus element into the front surface of the N-type crystal silicon wafer by using an ion implantation technology to form a phosphorus-doped front surface field;
s7, producing a silicon oxide passivation surface by adopting a concentrated nitric acid silicon oxide wafer or thermal oxidation, and depositing by adopting PECVD (plasma enhanced chemical vapor deposition) to form a passivation antireflection layer;
and S8, printing Ag slurry on the front surface of the N-type crystal silicon wafer by adopting a screen printing mode, printing Ag/Al slurry on the back surface of the N-type crystal silicon wafer, and sintering by adopting a co-sintering mode to form the metal contact electrode.
In one embodiment of the invention, the resistivity of the N-type crystalline silicon wafer is 0.5-10ohm.
In one embodiment of the present invention, the tunnel oxide layer has a thickness of 1-3 nm.
In one embodiment of the present invention, the thickness of the intrinsic polysilicon layer is 100-300 nm.
In one embodiment of the invention, boron tribromide is adopted as the boron source for boron diffusion, the diffusion temperature is 950-.
In one embodiment of the present invention, the implantation dose of the ion implantation is 1 × 1015-3×1015/cm2The ion implantation energy is 5-10 keV, the annealing temperature of the ion implantation is 750-850 ℃, and the sheet resistance after annealing is 50-150 ohm/sq.
In one embodiment of the invention, the passivated anti-reflective layer has a thickness of 75 to 85nm and a refractive index of 2.0 to 2.1.
Compared with the prior art, the passivated contact N-type back junction solar cell and the preparation method thereof adopt P + doped polycrystalline silicon applied to the back of the N-type cell to passivate an emitter junction and a metal contact area, carriers enter the doped P-type polycrystalline silicon layer through a tunneling oxidation layer to realize selective transmission and collection, and the excellent passivation performance of the polycrystalline silicon is utilized to greatly reduce the surface recombination of the emitter junction, particularly the recombination of the metal contact area, so that the voltage and the efficiency of the cell are improved, and the purpose of the invention is realized.
The features of the present invention will be apparent from the accompanying drawings and from the detailed description of the preferred embodiments which follows.
Drawings
FIG. 1 is a schematic diagram of a passivated contact N-type back junction solar cell of the present invention;
FIG. 2 is a schematic structural diagram of a silicon wafer after step S1 in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a silicon wafer after step S2 in an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a silicon wafer after step S3 in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a silicon wafer after step S4 in an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a silicon wafer after step S5 in an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a silicon wafer after step S6 in an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a silicon wafer after step S7 in an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a silicon wafer after step S8 in an embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
As shown in fig. 1 to 9, the passivated contact N-type back junction solar cell provided by the present invention includes an N-type crystalline silicon wafer 10, wherein an N + front surface field doped region 20, a front surface passivated antireflection layer 30 and a metal contact electrode 40 are sequentially disposed on a front surface of the N-type crystalline silicon wafer 10 from inside to outside, and a tunneling oxide layer 50, a P + doped polysilicon region 60, a back surface passivated antireflection layer 70 and a metal contact electrode 80 are sequentially disposed on a back surface of the N-type crystalline silicon wafer 10 from inside to outside; the tunneling oxide layer 50, the P + doped polysilicon region 60 and the back surface passivation antireflection layer 70 constitute the emitter junction of the N-type back junction solar cell and are located on the back surface of the N-type crystalline silicon wafer 10.
The preparation method of the passivated contact N-type back junction solar cell comprises the following steps:
s1, taking an N-type crystal silicon wafer to carry out surface texturing treatment, wherein the resistivity of the N-type crystal silicon wafer is 0.5-10ohm.cm, removing a damage layer by adopting NaOH or KOH alkaline solution, texturing, and forming pyramid-shaped textured surfaces with the thickness of 3-5um on the two sides of the N-type crystal silicon wafer;
s2, oxidizing the surface of the N-type crystal silicon wafer, and forming an ultrathin tunneling oxide layer in a high-temperature thermal oxidation, nitric acid oxidation or ozone oxidation mode, wherein the thickness of the tunneling oxide layer is 1-3 nm;
s3, depositing an intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer by adopting L PCVD equipment (low-pressure chemical vapor deposition) on the basis of the tunneling oxide layer, wherein the thickness of the intrinsic polycrystalline silicon layer is 100-300 nm;
s4, placing the N-type crystal silicon wafer into an industrialized boron diffusion furnace, performing boron diffusion on the intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer, wherein boron doping forms a P + doping layer, a boron source for boron diffusion adopts boron tribromide, the diffusion temperature is 950-;
s5, placing the N-type crystal silicon wafer after boron diffusion into an etching cleaning machine, cleaning the positive surface, and removing the borosilicate glass layer and the oxide layer on the front surface, wherein the etching depth is 0.3-0.5 um;
s6, carrying out phosphorus element on the front surface of the N-type crystal silicon wafer by using the ion implantation technologyImplanting ions to form a phosphorus doped front surface field at an implant dose of 1 × 1015-3×1015/cm2The ion implantation energy is 5-10 keV, the annealing temperature of the ion implantation is 750-850 ℃, and the sheet resistance after annealing is 50-150 ohm/sq;
s7, producing a silicon oxide passivation surface by using a concentrated nitric acid silicon oxide wafer or thermal oxidation, and forming a passivation antireflection layer by using PECVD (plasma enhanced chemical vapor deposition) deposition, wherein the thickness of the passivation antireflection layer is 75-85nm, and the refractive index is 2.0-2.1;
and S8, printing Ag slurry on the front surface of the N-type crystal silicon wafer by adopting a screen printing mode, printing Ag/Al slurry on the back surface of the N-type crystal silicon wafer, and sintering by adopting a co-sintering mode to form the metal contact electrode.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined by the appended claims and their equivalents.
Claims (8)
1. A passivation contact N-type back junction solar cell and a preparation method thereof are characterized by comprising an N-type crystal silicon wafer, wherein the front surface of the N-type crystal silicon wafer is sequentially provided with an N + front surface field doping region, a front surface passivation antireflection layer and a metal contact electrode from inside to outside, and the back surface of the N-type crystal silicon wafer is sequentially provided with a tunneling oxidation layer, a P + doped polycrystalline silicon region, a back surface passivation antireflection layer and a metal contact electrode from inside to outside; the tunneling oxide layer, the P + doped polycrystalline silicon region and the back surface passivation antireflection layer form an emitter junction of the N-type back junction solar cell and are located on the back surface of the N-type crystal silicon wafer.
2. A preparation method of an N-type back junction solar cell with passivated contact is characterized by comprising the following steps:
s1, carrying out surface texturing treatment on the N-type crystal silicon wafer, removing a damage layer by using NaOH or KOH alkaline solution, texturing, and forming pyramid-shaped textured surfaces with the thickness of 3-5um on two sides of the N-type crystal silicon wafer;
s2, oxidizing the surface of the N-type crystal silicon wafer, and forming an ultrathin tunneling oxide layer in a high-temperature thermal oxidation, nitric acid oxidation or ozone oxidation mode;
s3, depositing an intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer by adopting L PCVD equipment (low-pressure chemical vapor deposition) on the basis of the tunneling oxide layer;
s4, placing the N-type crystal silicon wafer into an industrialized boron diffusion furnace, performing boron diffusion on the intrinsic polycrystalline silicon layer on the back of the N-type crystal silicon wafer, and doping boron to form a P + doped layer;
s5, placing the N-type crystal silicon wafer after boron diffusion into an etching cleaning machine, cleaning the positive surface, and removing the borosilicate glass layer and the oxide layer on the front surface, wherein the etching depth is 0.3-0.5 um;
s6, implanting phosphorus element into the front surface of the N-type crystal silicon wafer by using an ion implantation technology to form a phosphorus-doped front surface field;
s7, producing a silicon oxide passivation surface by adopting a concentrated nitric acid silicon oxide wafer or thermal oxidation, and depositing by adopting PECVD (plasma enhanced chemical vapor deposition) to form a passivation antireflection layer;
and S8, printing Ag slurry on the front surface of the N-type crystal silicon wafer by adopting a screen printing mode, printing Ag/Al slurry on the back surface of the N-type crystal silicon wafer, and sintering by adopting a co-sintering mode to form the metal contact electrode.
3. The method of claim 2 wherein the N-type crystalline silicon wafer has a resistivity of 0.5 to 10ohm.
4. The method of claim 2, wherein the tunneling oxide layer has a thickness of 1-3 nm.
5. The method of claim 2 wherein the intrinsic polysilicon layer has a thickness of 100-300 nm.
6. The method of claim 2, wherein the boron source for boron diffusion is boron tribromide, the diffusion temperature is 950-.
7. The method of claim 2, wherein the ion implantation is performed at a dose of 1 × 10N15-3×1015/cm2The ion implantation energy is 5-10 keV, the annealing temperature of the ion implantation is 750-850 ℃, and the sheet resistance after annealing is 50-150 ohm/sq.
8. The method of claim 2, wherein the passivated contact N-type back junction solar cell has a thickness of 75-85nm and a refractive index of 2.0-2.1.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113707761A (en) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | N-type selective emitter solar cell and preparation method thereof |
| CN114447142A (en) * | 2021-12-24 | 2022-05-06 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | N-type TOPCon solar cell and manufacturing method thereof |
| CN114883421A (en) * | 2022-04-14 | 2022-08-09 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Double-sided passivation contact solar cell and manufacturing method thereof |
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| CN114447142B (en) * | 2021-12-24 | 2024-03-01 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | N-type TOPCON solar cell and manufacturing method thereof |
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