CN114883421A - Double-sided passivation contact solar cell and manufacturing method thereof - Google Patents

Double-sided passivation contact solar cell and manufacturing method thereof Download PDF

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CN114883421A
CN114883421A CN202210393399.9A CN202210393399A CN114883421A CN 114883421 A CN114883421 A CN 114883421A CN 202210393399 A CN202210393399 A CN 202210393399A CN 114883421 A CN114883421 A CN 114883421A
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boron
polycrystalline silicon
doped
phosphorus
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杨露
刘大伟
倪玉凤
张婷
魏凯峰
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Huanghe Hydropower Development Co Ltd
Xian Solar Power Branch of Qinghai Huanghe Hydropower Development Co Ltd
Xining Solar Power branch of Qinghai Huanghe Hydropower Development Co Ltd
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Huanghe Hydropower Development Co Ltd
Xian Solar Power Branch of Qinghai Huanghe Hydropower Development Co Ltd
Xining Solar Power branch of Qinghai Huanghe Hydropower Development Co Ltd
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Abstract

Provided are a double-sided passivation contact solar cell and a method for fabricating the same, which includes: carrying out first boron diffusion treatment on the front surface of the N-type silicon wafer substrate to form an emitter junction layer; sequentially forming a first tunneling oxide layer and a first intrinsic polycrystalline silicon layer which are stacked on the emitter junction layer; carrying out second boron diffusion treatment on the first intrinsic polycrystalline silicon layer to form a boron-doped polycrystalline silicon layer; sequentially forming a second tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer which are stacked on the back surface of the N-type silicon wafer substrate; sequentially forming a passivation layer and a first anti-reflection layer which are stacked on the boron-doped polycrystalline silicon layer, and forming a second anti-reflection layer on the phosphorus-doped polycrystalline silicon layer; front and back electrodes are formed. The manufacturing method can effectively reduce the contact resistance of the boron-doped polycrystalline silicon layer in contact with the metal electrode, thereby effectively improving the problem of poor contact between the boron-doped polycrystalline silicon layer and the metal electrode and further being beneficial to improving the efficiency of the battery.

Description

Double-sided passivation contact solar cell and manufacturing method thereof
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a double-sided passivation contact solar cell and a manufacturing method thereof.
Background
The N-type battery has the advantages of long minority carrier lifetime, no light attenuation, good weak light effect, small temperature coefficient and the like, and becomes the best candidate for replacing a P-type battery. The N-type passivated contact solar cell, such as an N-type TOPCon cell, forms a passivated contact structure by depositing an ultrathin oxide layer and a heavily doped polysilicon layer on the back surface, and the passivated contact structure can realize the selective passing of current carriers, greatly reduce the metal contact recombination of the cell, promote the open-circuit voltage and the short-circuit current, and further be beneficial to improving the cell efficiency.
Currently, in an N-type passivated contact solar cell, such as an N-type TOPCon cell, the front passivation is usually performed by using a boron-doped polysilicon layer, but the metallization contact (i.e., the contact between the boron-doped polysilicon layer and the metal electrode) of the boron-doped polysilicon layer has a high contact resistivity, which is not favorable for improving the cell efficiency.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a double-sided passivation contact solar cell and a manufacturing method thereof.
According to an aspect of the embodiments of the present invention, a method for fabricating a double-sided passivation contact solar cell is provided, which includes: carrying out first boron diffusion treatment on the front surface of the N-type silicon wafer substrate to form an emitter junction layer; sequentially forming a first tunneling oxide layer and a first intrinsic polycrystalline silicon layer which are stacked on the emitter junction layer; carrying out second boron diffusion treatment on the first intrinsic polycrystalline silicon layer to enable the first intrinsic polycrystalline silicon layer to form a boron-doped polycrystalline silicon layer; sequentially forming a second tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer which are stacked on the back surface of the N-type silicon wafer substrate; sequentially forming a passivation layer and a first anti-reflection layer which are stacked on the boron-doped polycrystalline silicon layer, and forming a second anti-reflection layer on the phosphorus-doped polycrystalline silicon layer; a front electrode is formed on the first anti-reflective layer to contact the boron doped polysilicon layer through the first anti-reflective layer and the passivation layer, and a back electrode is formed on the second anti-reflective layer to contact the phosphorus doped polysilicon layer through the second anti-reflective layer.
In the method for manufacturing a double-sided passivation contact solar cell provided in the above aspect, the method for performing the first boron diffusion treatment on the front surface of the N-type silicon wafer substrate includes: introducing oxygen and nitrogen carrying a boron source at the same time at a first preset temperature to carry out boron source deposition; and raising the temperature to a second preset temperature so as to push boron atoms into the N-type silicon wafer substrate to form the emitter junction layer.
In the method for manufacturing a double-sided passivation contact solar cell provided in the above aspect, the first predetermined temperature is 850 ℃ to 900 ℃; and/or the boron source comprises boron trichloride or boron tribromide; and/or nitrogen introduced into the oxygen and boron-bearing sourceThe gas time is 600 s-3600 s; and/or the flow rate of the oxygen is 100 sccm-1000 sccm; and/or the flow rate of the nitrogen is 100 sccm-1000 sccm; and/or the second predetermined temperature is 900 ℃ to 1000 ℃; and/or the propelling time is 600 s-3600 s; and/or the doped junction depth of boron in the emitter junction layer is 0.3-1.0 μm; and/or the sheet resistance of the emitting junction layer is 50-200 ohm/sq; and/or the doping concentration of boron in the emitter junction layer is 1 x 10 19 atoms/cm 3 ～5×10 20 atoms/cm 3 。
In the method for manufacturing a double-sided passivated contact solar cell provided in the above aspect, the method for performing the second boron diffusion treatment on the first intrinsic polycrystalline silicon layer includes: introducing oxygen and nitrogen carrying a boron source at the same time at a third preset temperature to carry out boron source deposition; raising the temperature to a fourth predetermined temperature to drive boron atoms into the first intrinsic polysilicon layer to form the boron doped polysilicon layer.
In the method for manufacturing a double-sided passivation contact solar cell provided in the above aspect, the third predetermined temperature is 850 ℃ to 900 ℃; and/or the boron source comprises boron trichloride or boron tribromide; and/or the time for introducing the oxygen and the nitrogen carrying the boron source is 600-3600 s; and/or the flow rate of the oxygen is 100 sccm-1000 sccm; and/or the flow rate of the nitrogen is 100 sccm-1000 sccm; and/or the fourth predetermined temperature is 900 ℃ to 1000 ℃; and/or the propelling time is 600 s-3600 s; and/or the doping junction depth of boron in the boron-doped polycrystalline silicon layer is 0.2-0.5 μm; and/or the sheet resistance of the boron-doped polycrystalline silicon layer is 100-300 ohm/sq; and/or the doping concentration of boron in the boron-doped polysilicon layer is 1 x 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 。
In the method for manufacturing a double-sided passivation contact solar cell provided in the above aspect, the method for sequentially forming the stacked second tunnel oxide layer and the phosphorus-doped polysilicon layer on the back surface of the N-type silicon wafer substrate includes: forming the second tunneling oxide layer on the back surface of the N-type silicon wafer substrate; forming a second intrinsic polycrystalline silicon layer on the second tunneling oxide layer; and carrying out phosphorus doping on the second intrinsic polycrystalline silicon layer by adopting a high-temperature diffusion method or an ion implantation method to form the phosphorus-doped polycrystalline silicon layer.
In the method for manufacturing a double-sided passivated contact solar cell provided by the above aspect, the doping concentration of phosphorus in the phosphorus-doped polycrystalline silicon layer is 1 × 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 (ii) a And/or the thickness of the second tunneling oxide layer is 1.5 nm; and/or the thickness of the second intrinsic polycrystalline silicon layer is 70 nm-200 nm.
In the method for manufacturing a double-sided passivated contact solar cell provided by the above aspect, the method for forming the front electrode and the back electrode includes:
screen printing front electrode paste on the first antireflection layer, and screen printing back electrode paste on the second antireflection layer; sintering at 750-850 ℃ to cause the front electrode slurry to burn through the first silicon nitride layer and the passivation layer to form ohmic contact with the boron-doped polysilicon layer, and to cause the back electrode slurry to burn through the second anti-reflection layer to form ohmic contact with the phosphorus-doped polysilicon layer, so as to form the front electrode and the back electrode respectively.
In the method for manufacturing a double-sided passivation contact solar cell provided in the above aspect, the thickness of the first tunneling oxide layer is 3 nm; and/or the thickness of the first intrinsic polycrystalline silicon layer is 70 nm-200 nm; and/or the passivation layer is an aluminum oxide layer; and/or the thickness of the passivation layer is 3 nm; and/or both the first anti-reflection layer and the second anti-reflection layer are silicon nitride layers; and/or the first anti-reflective layer has a thickness of 85 nm; and/or the thickness of the second antireflection layer is 90 nm.
According to another aspect of the embodiments of the invention, a double-sided passivated contact solar cell is provided, which is manufactured by the above manufacturing method.
Has the advantages that: according to the double-sided passivation contact solar cell, the first boron diffusion treatment is firstly carried out on the front surface of the N-type silicon wafer substrate to form the emitter junction layer, and then the second boron diffusion treatment is carried out on the intrinsic polycrystalline silicon layer deposited on the front surface of the substrate to form the boron-doped polycrystalline silicon layer, so that the contact resistivity of the boron-doped polycrystalline silicon layer (namely the contact resistivity of the boron-doped polycrystalline silicon layer and the metal electrode) can be effectively reduced, and the efficiency of the cell can be improved. In addition, the preparation method is convenient to operate, and has the characteristics of simple process and low cost.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a double-sided passivated contact solar cell according to an embodiment of the invention;
fig. 2 is a flow chart of a method of fabricating a double-sided passivated contact solar cell according to an embodiment of the invention;
FIG. 3 is a graph comparing doping curves of boron-doped polysilicon layers according to examples 1-2 of the present invention and comparative example 1;
FIG. 4 is a comparative graph of cell contact resistivity test results of the double-sided passivated contact solar cells prepared according to examples 1-2 of the present invention and comparative example 1.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
As used herein, the term "include" and its variants mean open-ended terms in the sense of "including, but not limited to. The terms "based on," based on, "and the like mean" based at least in part on, "" based at least in part on. The terms "one embodiment" and "an embodiment" mean "at least one embodiment". The term "another embodiment" means "at least one other embodiment". The terms "first," "second," and the like may refer to different or the same object. Other definitions, whether explicit or implicit, may be included below. The definition of a term is consistent throughout the specification unless the context clearly dictates otherwise.
As described in the background art, the metallization contact (i.e., the contact between the boron-doped polysilicon layer and the metal electrode) of the boron-doped polysilicon layer on the front surface of the current N-type passivated contact solar cell has a high contact resistivity, which limits the improvement of the cell efficiency. Therefore, in order to solve the above technical problems related to the passivated contact solar cell described in the prior art, embodiments according to the present invention provide a double-sided passivated contact solar cell and a method for manufacturing the same.
According to the manufacturing method, the emitter junction layer is formed by performing the first boron diffusion treatment on the front surface of the N-type silicon wafer substrate, and the boron-doped polycrystalline silicon layer is formed by performing the second boron diffusion treatment on the intrinsic polycrystalline silicon layer deposited on the front surface of the substrate, so that the contact resistivity of the boron-doped polycrystalline silicon layer (namely the contact resistivity of the boron-doped polycrystalline silicon layer in contact with the front metal electrode) can be effectively reduced, and the efficiency of the cell can be improved. A double-sided passivated contact solar cell and a method of fabricating the same according to embodiments of the invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a double-sided passivated contact solar cell according to an embodiment of the invention.
Referring to fig. 1, a double-sided passivated contact solar cell according to an embodiment of the invention may be, for example, a TOPCon solar cell, comprising: an N-type silicon wafer substrate 10, an emitter junction layer 20, a first tunnel oxide layer 30, a boron-doped polysilicon layer 40, a second tunnel oxide layer 50, a phosphorus-doped polysilicon layer 60, a passivation layer 70, a first anti-reflection layer 80, a second anti-reflection layer 90, a front electrode 100 and a back electrode 110.
Wherein the front electrode 100 forms an ohmic contact with the boron doped polysilicon layer 40 through the first anti-reflective layer 80 and the passivation layer 70; the back electrode 110 forms an ohmic contact with the phosphorus-doped polysilicon layer 60 through the second anti-reflective layer 90. The method for manufacturing the double-sided passivation contact solar cell will be described in detail below.
Fig. 2 is a flow chart of a method of fabricating a double-sided passivated contact solar cell according to an embodiment of the invention. Referring to fig. 1 and 2 together, the method for manufacturing a double-sided passivation contact solar cell according to the embodiment of the invention includes step S110, step S120, step S130, step S140, step S150, and step S160.
Specifically, in step S110, a first boron diffusion process is performed on the front surface of the N-type silicon wafer substrate 10 to form the emitter junction layer 20. That is, the emitter junction layer 20 belongs to a part (front surface region part) of the N-type silicon wafer substrate 10. In other words, boron is diffused into the N-type silicon wafer substrate 10 from the front surface of the N-type silicon wafer substrate 10 by performing a boron diffusion process on the front surface of the N-type silicon wafer substrate 10, thereby forming the emitter junction layer 20 in the region where boron is diffused in the N-type silicon wafer substrate 10.
Specifically, the method for implementing step S110 includes:
firstly, oxygen and nitrogen carrying boron source are simultaneously introduced at the temperature of 850-900 ℃ to carry out boron source deposition. The boron source comprises boron trichloride or boron tribromide, the time for introducing the oxygen and the nitrogen carrying the boron source is 600-3600 s, the flow rate of the oxygen is 100-1000 sccm, and the flow rate of the nitrogen is 100-1000 sccm.
And secondly, heating to 900-1000 ℃, and pushing boron atoms into the N-type silicon wafer substrate 10 by using high temperature to form the emitter junction layer 20. Here, the advancing time is 600s to 3600 s.
In one example, the doping junction depth of boron in the emitter junction layer 20 may be 0.3 μm to 1.0 μm after the first boron diffusion process is performed.
In this embodiment, the sheet resistance of the emitter junction layer 20 may be 50 ohm/sq-200 ohm/sq, and the doping concentration of boron in the emitter junction layer 20 may be 1 × 10 19 atoms/cm 3 ～5×10 20 atoms/cm 3 。
In one example, before the first boron diffusion treatment is performed on the front surface of the N-type silicon wafer substrate 10, the manufacturing method further comprises: the method comprises the steps of performing alkali texturing treatment on an N-type silicon wafer substrate 10 to form a pyramid textured surface or an inverted pyramid textured surface on the surface (namely the front surface and the back surface) of the N-type silicon wafer substrate 10, so that the reflectivity of incident light can be reduced, and the photon utilization rate can be improved.
In one example, after the first boron diffusion treatment is performed on the front surface of the N-type silicon wafer substrate 10 to form the emitter junction 20, and before the step S120, the manufacturing method further includes: and cleaning the N-type silicon wafer substrate 10 by using an HF solution to remove the borosilicate glass layer formed after the first boron diffusion treatment. Wherein the volume ratio of HF in the HF solution is 10-30%, and the cleaning time is 100-300 s.
In step S120, a first tunnel oxide layer 30 and a first intrinsic polysilicon layer, which are stacked, are sequentially formed on the emitter junction layer 20.
In one example, the first tunnel oxide layer 30 is formed using a wet oxygen oxidation method or a high temperature oxidation method. Wherein, the first tunneling oxide layer 30 is a silicon dioxide layer; and/or the first tunnel oxide layer 30 has a thickness of 3 nm.
In one example, the first intrinsic polycrystalline silicon layer has a thickness of 70nm to 200 nm. Further, a method of forming the first intrinsic polycrystalline silicon layer includes any one of a low pressure chemical vapor deposition method (LPCVD), an atmospheric pressure chemical vapor deposition method (APCVD), a plasma enhanced chemical vapor deposition method (PECVD), and a physical vapor deposition method (PVD).
In step S130, a second boron diffusion process is performed on the first intrinsic polysilicon layer to form a boron-doped polysilicon layer 40.
Specifically, the method for implementing step S130 includes:
firstly, oxygen and nitrogen carrying boron source are simultaneously introduced at the temperature of 850-900 ℃ to carry out boron source deposition. The boron source comprises boron trichloride or boron tribromide, the time for introducing the oxygen and the nitrogen carrying the boron source is 600-3600 s, the flow of the oxygen is 100-1000 sccm, and the flow of the nitrogen is 100-1000 sccm;
then, the temperature is raised to 900 to 1000 ℃, and boron atoms are pushed into the first intrinsic polycrystalline silicon layer by using high temperature to form the boron-doped polycrystalline silicon layer 40. Wherein the advancing time is 600 s-3600 s.
In one example, the boron doped junction depth in the boron doped polysilicon layer 40 is 0.2 μm to 0.5 μm after the second boron diffusion process is performed.
In the present embodiment, the sheet resistance of the boron-doped polysilicon layer 40 is 100ohm/sq to 300 ohm/sq. The boron doping concentration in the boron-doped polysilicon layer 40 is 1 × 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 。
According to the manufacturing method, the emitter junction layer 20 is formed by performing boron diffusion treatment on the front surface of the N-type silicon wafer substrate 10 for the first time, and then boron diffusion treatment is performed on the first intrinsic polycrystalline silicon layer deposited on the front surface of the N-type silicon wafer substrate 10 for the second time to form the boron-doped polycrystalline silicon layer 40, so that the contact resistivity of the boron-doped polycrystalline silicon layer 40 (namely the contact resistivity of the boron-doped polycrystalline silicon layer 40 and a front electrode to be formed) is effectively reduced, and the obvious improvement is achieved.
In step S140, a second tunnel oxide layer 50 and a phosphorus-doped polysilicon layer 60 are sequentially formed on the back surface of the N-type silicon substrate 10.
Specifically, the method for implementing step S130 includes:
first, the second tunnel oxide layer 50 is formed on the back surface of the N-type silicon wafer substrate 10 by using a wet oxygen oxidation method or a high temperature oxidation method. Wherein the thickness of the second tunneling oxide layer 50 is 1.5 nm.
Next, a second intrinsic polysilicon layer is formed on the second tunnel oxide layer 50. Wherein the thickness of the second intrinsic polycrystalline silicon layer is 70 nm-200 nm. The second intrinsic polycrystalline silicon layer is formed by any one of Low Pressure Chemical Vapor Deposition (LPCVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Physical Vapor Deposition (PVD).
Finally, the second intrinsic polysilicon layer is phosphorus-doped by a high temperature diffusion method or an ion implantation method to form the phosphorus-doped polysilicon layer 60. Wherein the phosphorus doping concentration in the phosphorus-doped polysilicon layer 60 is 1 × 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 。
In step S150, a passivation layer 70 and a first anti-reflective layer 80 are sequentially formed on the boron-doped polysilicon layer 40 in a stacked manner, and a second anti-reflective layer 90 is formed on the phosphorus-doped polysilicon layer 60.
In one example, the passivation layer 70 is an aluminum oxide layer. The thickness of the passivation layer 70 is 3 nm. The method of forming the passivation layer 70 includes an Atomic Layer Deposition (ALD) method.
In one example, the first anti-reflective layer 80 and the second anti-reflective layer 90 are both silicon nitride layers. The first and second anti-reflective layers 80 and 90 are formed by a method including Plasma Enhanced Chemical Vapor Deposition (PECVD). Wherein the thickness of the first anti-reflection layer 80 is 85nm, and the thickness of the second anti-reflection layer 90 is 90 nm.
In this embodiment, by forming the aluminum oxide layer and the silicon nitride layer, the surface passivation and antireflection effects can be achieved.
In step S160, a front electrode 100, which contacts the boron-doped polysilicon layer 40 through the first anti-reflective layer 80 and the passivation layer 70, is formed on the first anti-reflective layer 80, and a back electrode 110, which contacts the phosphorus-doped polysilicon layer 60 through the second anti-reflective layer 90, is formed on the second anti-reflective layer 90.
Specifically, the method for implementing step S160 includes:
first, a front electrode paste is screen-printed on the first anti-reflective layer 80, and a back electrode paste is screen-printed on the second anti-reflective layer 90.
Next, the front electrode paste is fired through the first anti-reflective layer 80 and the passivation layer 70 to form ohmic contact with the boron-doped polysilicon layer 40 by high-temperature sintering, and the back electrode paste is fired through the second anti-reflective layer 90 to form ohmic contact with the phosphorus-doped polysilicon layer 60 to form the front electrode 100 and the back electrode 110, respectively.
In one example, the front electrode 100 includes a first main gate line and a first fine gate line. The first main grid line is made of silver, and the first fine grid line is made of silver and aluminum.
In one example, the back electrode 110 includes a second main gate line and a second thin gate line. And the second main grid line and the second fine grid line are both silver.
In one example, the high temperature sintering temperature is 750 ℃ to 850 ℃.
The performance improvement of the double-sided passivated contact solar cell formed by the fabrication method of the present invention will be further illustrated by comparing two specific examples with one comparative example.
< example 1>
Referring to fig. 1 and 2 together, in example 1, in step S110, oxygen and nitrogen carrying a boron source are simultaneously introduced at a temperature of 850 ℃ to perform boron source deposition. The boron source is boron tribromide, the time for introducing the oxygen and the nitrogen carrying the boron source is 1200s, the flow rate of the oxygen is 350sccm, and the flow rate of the nitrogen is 130 sccm.
Then, the temperature is raised to 920 ℃, and boron atoms are pushed into the N-type silicon wafer substrate 10 by using high temperature to form the emitter junction layer 20. Wherein the advancing time is 1200 s.
In example 1, after the first boron diffusion treatment was performed, the doping junction depth of boron in the emitter junction layer 20 was 0.35 μm.
In example 1, the sheet resistance of the emitter junction layer 20 was 150ohm/sq, and the doping concentration of boron in the emitter junction layer 20 was 1 × 10 19 atoms/cm 3 。
In step S130, oxygen and nitrogen carrying a boron source are simultaneously introduced at a temperature of 850 ℃ to perform boron source deposition. The boron source is boron tribromide, the time for introducing the oxygen and the nitrogen carrying the boron source is 1500s, the flow rate of the oxygen is 350sccm, and the flow rate of the nitrogen is 130 sccm.
Then, raising the temperature to 900 ℃, and pushing boron atoms into the first intrinsic polycrystalline silicon layer by using high temperature to form the boron-doped polycrystalline silicon layer 40; wherein the advancing time is 2400 s.
In example 1, after the second boron diffusion treatment was performed, the boron doping junction depth in the boron-doped polysilicon layer 40 was 0.25 μm.
In embodiment 1, the sheet resistance of the boron-doped polysilicon layer 40 is 270ohm/sq, and the doping concentration of boron in the boron-doped polysilicon layer 40 is 1.5 × 10 20 atoms/cm 3 。
The rest steps in embodiment 1 refer to steps S120 to S160.
< example 2>
Referring to fig. 1 and 2 together, in example 2, in step S110, oxygen and nitrogen carrying a boron source are simultaneously introduced at a temperature of 900 ℃ to perform boron source deposition. The boron source is boron tribromide, the time for introducing the oxygen and the nitrogen carrying the boron source is 2000s, the flow rate of the oxygen is 350sccm, and the flow rate of the nitrogen is 130 sccm.
Then, the temperature is raised to 980 ℃, and boron atoms are pushed into the N-type silicon wafer substrate 10 by using high temperature to form the emitter junction layer 20. Wherein the time of said advancing is 2000 s.
In example 2, after the first boron diffusion treatment was performed, the doping junction depth of boron in the emitter junction layer 20 was 0.7 μm.
In example 2, the sheet resistance of the emitter junction layer 20 was 80ohm/sq, and the doping concentration of boron in the emitter junction layer 20 was 3 × 10 19 atoms/cm 3 。
The rest steps in embodiment 2 refer to steps S120 to S160. That is, the steps of embodiment 2 and embodiment 1 are the same except that step S110 is different.
< comparative example 1>
In comparative example 1, boron diffusion was performed only once. That is, unlike the above-described examples 1 and 2, the solar cell is formed in comparative example 1 using the above-described steps S120 to S160 (excluding the above-described step S110).
FIG. 3 is a graph comparing doping curves of boron-doped polysilicon layers in examples 1-2 according to the present invention and comparative example 1. As shown in fig. 3, compared to comparative example 1, in examples 1 and 2, two boron diffusion treatments were performed successively during the preparation, and the doping junction depths of boron in the boron-doped polysilicon layers of examples 1 and 2 are greater than the doping junction depths of boron in the boron-doped polysilicon layer of comparative example 1, which indicates that the boron diffusion treatments performed twice respectively are beneficial to increasing the doping junction depths of boron in the boron-doped polysilicon layers, so that the boron-doped polysilicon layers have better doping effects.
FIG. 4 is a graph comparing the test results of cell contact resistivity (i.e., contact resistivity of a boron-doped polysilicon layer in contact with a metal electrode) of the double-sided passivated contact solar cells prepared in examples 1-2 according to the present invention and comparative example 1.
As shown in fig. 4, the contact resistivity of the batteries prepared in examples 1 and 2 was lower than that of comparative example 1, indicating that the poor contact problem of the batteries (i.e., the poor contact problem of the boron-doped polysilicon layer and the metal electrode) was advantageously solved through the two boron diffusion treatments.
Further, the double-sided passivated contact solar cells prepared in examples 1 to 2 of the present invention and comparative example 1 were subjected to cell performance tests, and the test results are shown in table 1 below.
Table 1: cell performance test results of the double-sided passivated contact solar cell in examples 1-2 and comparative example 1
Figure BDA0003596436270000101
As can be seen from table 1, compared to comparative example 1, in examples 1 and 2, the two boron diffusion treatments were performed in sequence during the preparation process, and the series resistance Rs related to the cell contact resistivity (i.e., the contact resistivity of the boron-doped polysilicon layer in contact with the metal electrode) of the obtained solar cell was small and the fill factor FF was large, which also indicates that the two boron diffusion treatments are beneficial to improving the performance of the prepared cell.
In summary, according to the double-sided passivation contact solar cell and the manufacturing method thereof in the embodiments of the invention, the first boron diffusion treatment is performed on the front surface of the N-type silicon wafer substrate to form the emitter junction layer, and then the second boron diffusion treatment is performed on the intrinsic polysilicon layer deposited on the front surface of the substrate to form the boron-doped polysilicon layer, so that the contact resistivity of the boron-doped polysilicon layer (i.e., the contact resistivity of the boron-doped polysilicon layer in contact with the front metal electrode) can be effectively reduced, and thus the problem of poor contact between the boron-doped polysilicon layer and the front metal electrode can be effectively improved, which is beneficial to improving the efficiency of the cell. In addition, the preparation method is convenient to operate, and has the characteristics of simple process and low cost.
The foregoing description has described certain embodiments of this invention. Other embodiments are within the scope of the following claims.
The terms "exemplary," "example," and the like, as used throughout this specification, mean "serving as an example, instance, or illustration," and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described technology. However, the techniques may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.
Alternative embodiments of the present invention are described in detail with reference to the drawings, however, the embodiments of the present invention are not limited to the specific details in the above embodiments, and within the technical idea of the embodiments of the present invention, many simple modifications may be made to the technical solution of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the description is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A method for manufacturing a double-sided passivated contact solar cell, the method comprising:
carrying out first boron diffusion treatment on the front surface of the N-type silicon wafer substrate to form an emitter junction layer;
sequentially forming a first tunneling oxide layer and a first intrinsic polycrystalline silicon layer which are stacked on the emitter junction layer;
carrying out second boron diffusion treatment on the first intrinsic polycrystalline silicon layer so as to form the first intrinsic polycrystalline silicon layer into a boron-doped polycrystalline silicon layer;
sequentially forming a second tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer which are stacked on the back surface of the N-type silicon wafer substrate;
sequentially forming a passivation layer and a first anti-reflection layer which are stacked on the boron-doped polycrystalline silicon layer, and forming a second anti-reflection layer on the phosphorus-doped polycrystalline silicon layer;
a front electrode is formed on the first anti-reflective layer to contact the boron doped polysilicon layer through the first anti-reflective layer and the passivation layer, and a back electrode is formed on the second anti-reflective layer to contact the phosphorus doped polysilicon layer through the second anti-reflective layer.
2. The manufacturing method of claim 1, wherein the method for performing the first boron diffusion treatment on the front surface of the N-type silicon wafer substrate comprises the following steps:
introducing oxygen and nitrogen carrying a boron source at the same time at a first preset temperature to carry out boron source deposition;
and raising the temperature to a second preset temperature so as to push boron atoms into the N-type silicon wafer substrate to form the emitter junction layer.
3. The method of manufacturing according to claim 2, wherein the first predetermined temperature is 850 ℃ to 900 ℃; and/or the boron source comprises boron trichloride or boron tribromide; and/or the time for introducing the oxygen and the nitrogen carrying the boron source is 600-3600 s; and/or the flow rate of the oxygen is 100 sccm-1000 sccm; and/or the flow rate of the nitrogen is 100 sccm-1000 sccm; and/or the second predetermined temperature is 900 ℃ to 1000 ℃; and/or the propelling time is 600 s-3600 s; and/or the doped junction depth of boron in the emitter junction layer is 0.3-1.0 μm; and/or the sheet resistance of the emitting junction layer is 50-200 ohm/sq; and/or the doping concentration of boron in the emitter junction layer is 1 x 10 19 atoms/cm 3 ～5×10 20 atoms/cm 3 。
4. The method of claim 1, 2 or 3, wherein the second boron diffusion treatment of the first intrinsic polysilicon layer comprises:
introducing oxygen and nitrogen carrying a boron source at the same time at a third preset temperature to carry out boron source deposition;
raising the temperature to a fourth predetermined temperature to drive boron atoms into the first intrinsic polysilicon layer to form the boron doped polysilicon layer.
5. The method of manufacturing according to claim 1 or 4, wherein the third predetermined temperature is 850 ℃ to 900 ℃; and/or the boron source comprises boron trichloride or boron tribromide; and/or the time for introducing the oxygen and the nitrogen carrying the boron source is 600-3600 s; and/or the flow rate of the oxygen is 100 sccm-1000 sccm; and/or the flow rate of the nitrogen is 100 sccm-1000 sccm; and/or the fourth predetermined temperature is 900 ℃ to 1000 ℃; and/or the propelling time is 600 s-3600 s; and/orThe doped junction depth of boron in the boron-doped polycrystalline silicon layer is 0.2-0.5 mu m; and/or the sheet resistance of the boron-doped polycrystalline silicon layer is 100-300 ohm/sq; and/or the doping concentration of boron in the boron-doped polysilicon layer is 1 x 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 。
6. The method of manufacturing according to claim 1, wherein the step of sequentially forming a second tunnel oxide layer and a phosphorus-doped polysilicon layer stacked on the back surface of the N-type silicon wafer substrate comprises:
forming the second tunneling oxide layer on the back surface of the N-type silicon wafer substrate;
forming a second intrinsic polysilicon layer on the second tunneling oxide layer;
and carrying out phosphorus doping on the second intrinsic polycrystalline silicon layer by adopting a high-temperature diffusion method or an ion implantation method to form the phosphorus-doped polycrystalline silicon layer.
7. The method as claimed in claim 1, wherein the phosphorus-doped polysilicon layer has a phosphorus doping concentration of 1 x 10 20 atoms/cm 3 ～5×10 21 atoms/cm 3 (ii) a And/or the thickness of the second tunneling oxide layer is 1.5 nm; and/or the thickness of the second intrinsic polycrystalline silicon layer is 70 nm-200 nm.
8. The method of manufacturing according to claim 1, wherein the method of forming the front electrode and the back electrode includes:
screen printing front electrode paste on the first antireflection layer, and screen printing back electrode paste on the second antireflection layer;
sintering at 750-850 ℃ to cause the front electrode slurry to burn through the first silicon nitride layer and the passivation layer to form ohmic contact with the boron-doped polysilicon layer, and to cause the back electrode slurry to burn through the second anti-reflection layer to form ohmic contact with the phosphorus-doped polysilicon layer, so as to form the front electrode and the back electrode respectively.
9. The method according to claim 1, wherein the first tunnel oxide layer has a thickness of 3 nm; and/or the thickness of the first intrinsic polycrystalline silicon layer is 70 nm-200 nm; and/or the passivation layer is an aluminum oxide layer; and/or the thickness of the passivation layer is 3 nm; and/or both the first anti-reflection layer and the second anti-reflection layer are silicon nitride layers; and/or the first anti-reflective layer has a thickness of 85 nm; and/or the thickness of the second antireflection layer is 90 nm.
10. A double-sided passivated contact solar cell fabricated by the fabrication method of any one of claims 1 to 9.
CN202210393399.9A 2022-04-14 2022-04-14 Double-sided passivation contact solar cell and manufacturing method thereof Pending CN114883421A (en)

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