CN108039374A - The preparation method of N-shaped double-side solar cell - Google Patents
The preparation method of N-shaped double-side solar cell Download PDFInfo
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- 239000010703 silicon Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
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- 238000005245 sintering Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
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- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
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- 238000009792 diffusion process Methods 0.000 description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
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- 230000003667 anti-reflective effect Effects 0.000 description 2
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- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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Abstract
The present invention provides a kind of preparation method of N-shaped double-side solar cell, and damaging layer or texturing processing and cleaning treatment are carried out to n-type silicon substrate；The preparation of emitter is carried out in silicon substrate bottom back side；Carry out insulation processing；Front-surface field preparation is carried out in silicon base front；Prepared by the passivation of smooth surface and antireflective coating, and prepared by backside passivation layer；The electrode slurry bed of material comprising conductive compositions is graphically formed in front and back；Carry out the first heat treatment process；Carry out the second heat treatment process.The more conventional method of contact resistance that this method is formed is lower, and surface passivated membrane also has more preferable inactivating performance after the second heat treatment, and technological process is relatively simple.And emitter is placed in the back side of solar cell, therefore in the preparation of the positive antireflective coating of solar cell, and need not limit too much, overleaf during the passivation layer design of emitter surface, it can not have to the influence of scruple light transmission rate, overleaf can accomplish passivation most preferably.
Description
Technical field
The present invention relates to a kind of preparation method of N-shaped double-side solar cell.
Background technology
At present, gradually exhausting with fossil energy, solar cell is more and more wider as new energy substitution scheme, use
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell produces carrier using photogenic voltage principle,
Then carrier is drawn using electrode, so as to be beneficial to efficiently use electric energy.
In the step of solar cell used at present, after the coating of patterned conductive slurry is formed, a height can be carried out
Warm sintering step, the step can cause the generation of the following problem：Traditional sintering, temperature is higher, the transmitting to battery
The inactivating performance of pole and back surface field has larger negative effect；Traditional sintering, the contact resistance and series resistance of battery electrode
Etc. higher；Traditional sintering, battery sintering process window is relatively narrow, because being related to a variety of electrode constituents, a variety of passivating structures,
It cannot cause inactivating performance and contact performance etc. while reach optimal.And current solar cell emitter is in front so that
It cannot reach optimal at the same time in the passivation and antireflective of emitter, disadvantage mentioned above is so that current N-shaped solar cell, it is impossible to
Reach optimal battery conversion efficiency.
The content of the invention
A kind of preparation method the object of the present invention is to provide N-shaped double-side solar cell solves biography existing in the prior art
The sintering of system, temperature is higher, and the inactivating performance of emitter and back surface field to battery has larger negative effect, battery electrode
Contact resistance and series resistance etc. are higher, and battery sintering process window is relatively narrow, a variety of blunt because being related to a variety of electrode constituents
Change structure, it is impossible to which so that inactivating performance and contact performance etc. reach optimal at the same time, and current solar cell emitter is just
Face so that cannot reach optimal at the same time in the passivation and antireflective of emitter, disadvantage mentioned above is so that the current N-shaped sun is electric
Pond, it is impossible to the problem of reaching optimal battery conversion efficiency.
The present invention technical solution be：
A kind of preparation method of N-shaped double-side solar cell, comprises the following steps,
Step 1, carry out n-type silicon substrate damaging layer or texturing processing and cleaning treatment；
Step 2, the preparation in silicon substrate bottom back side progress emitter；
Step 3, carry out insulation processing；
Step 4, silicon base front carry out front-surface field preparation；
Prepared by step 5, the passivation of smooth surface and antireflective coating, and prepared by backside passivation layer；
Step 6, in front and back graphically form the electrode slurry bed of material comprising conductive compositions；
Step 7, carry out the first heat treatment process；
Step 8, carry out the second heat treatment process.
Further, emitter is prepared using the p-type homogeneity emitter that formation is directly adulterated in substrate in step 2, or
The heterogeneous propellant pole that the polysilicon or non-crystalline silicon that depositing p-type adulterates in substrate are formed.
When further, using the preparation of heterogeneous propellant pole, formed between silicon base and DOPOS doped polycrystalline silicon or non-crystalline silicon
One layer of tunnelling passivation layer.
Further, front-surface field uses the n-type surface field that formation is directly adulterated in substrate in step 4, or in substrate
The polysilicon or amorphous silicon layer of the doping of upper depositing n-type and the foreign surfaces field formed, front-surface field use whole face or local setting.
When further, using heterogeneous back side emitter pole, the shape between the polysilicon or non-crystalline silicon that silicon base and p-type are adulterated
Into one layer of tunnelling passivation layer.
Further, tunnelling passivation layer is using intrinsic amorphous silicon, silica, aluminium oxide, titanium oxide, silicon nitride, nitrogen oxidation
One kind in silicon and carborundum.
Further, thickness 0.5nm ~ 3nm of tunnelling passivation layer.
Further, the method for graphically forming the electrode slurry bed of material is printing process, ink-jet, laser transfer or 3D printing side
Method.
Further, the first heat treatment process is sintering process, and the peak temperature that sintering processes process uses is 500 ~ 950
℃。
Further, during Passivation Treatment using Atomic layer deposition method, enhanced method of plasma vapour deposition or
Silica, aluminium oxide, silicon nitride, the silicon oxynitride of heat growth method formation, or two of which or more than two groups
Compound is passivated.
Further, the second heat treatment method is laser irradiation treatment method or quick heat treatment method.
Further, laser irradiation treatment method utilizes more than the large spot once irradiating of solar cell sizes, or makes
With the hot spot less than solar-electricity pool area be scanned formula irradiate, umber of exposures for once and more than.
Further, the wavelength for the laser that laser irradiating method uses is 300 ~ 1100nm, and laser irradiating method is to whole
A battery surface is irradiated or only carries out radiation treatment to electrode zone.
Further, the peak temperature that quick heat treatment method uses is 600 ~ 1000 DEG C.
The beneficial effects of the invention are as follows：The preparation method of this kind of N-shaped double-side solar cell, can reduce sintering temperature, subtract
Few influence to battery passivation performance；Reduce the contact resistance and series resistance of battery electrode；Battery sintering process can be widened
Window, heat treatment twice improve overall performance electrical performance transfer efficiency so that the hydrogen inactivating performance of passivating film is improved, from
And inactivating performance and contact performance etc. is caused to reach optimal at the same time.Technological process is relatively simple.And emitter is placed in sun electricity
The back side in pond, therefore in the preparation of the positive antireflective coating of solar cell, and need not limiting too much, overleaf emitter table
During the passivation layer design in face, the influence of scruple light transmission rate can not had to, overleaf can be accomplished passivation most preferably.
Brief description of the drawings
Fig. 1 is the structure diagram of one N-shaped double-side solar cell of the embodiment of the present invention；
Fig. 2 is the N-shaped double-sided solar battery of the embodiment of the present invention one, embodiment two and embodiment three at the graphical positive back side
The structure diagram of electrode pattern after electrocondution slurry；
Fig. 3 is the structure diagram of two N-shaped double-side solar cell of the embodiment of the present invention；
Wherein, 1- silicon bases, 2- front-surface fields, 3- fronts passivated reflection reducing penetrate film, and 4-p+ doped layers, 5- backside passivation layers, 6- is just
Face electrode, 7- backplates, 8- electrode main grids, the thin grid of 9- electrodes, 10- tunnelling passivation layers, 11- doped polysilicon layers.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
A kind of preparation method of N-shaped double-side solar cell of embodiment, damaging layer or texture are carried out to n-type silicon substrate 1
Change processing and cleaning treatment；The preparation of emitter is carried out at 1 back side of silicon base；Carry out insulation processing；Carried out in the front of silicon base 1
It is prepared by front-surface field；Prepared by the passivation of smooth surface and antireflective coating, and prepared by backside passivation layer 5；In front and back figure
Change the electrode slurry bed of material for being formed and including conductive compositions；Carry out the first heat treatment process；Carry out the second heat treatment process.Above-mentioned first
Heat treatment and the second heat treatment can also exchange sequences.Using method made above, the more conventional method of contact resistance of formation is more
Low, surface passivated membrane also has more preferable inactivating performance after the second heat treatment.
Embodiment one
It is specific as follows as an example, such as Fig. 1, the preparation method of this N-shaped double-side solar cell：
1）Damage and cleaning treatment are gone to n-type silicon substrate 1.Handled using NaOH solution carrying out damage, and using hydrofluoric acid,
Hydrochloric acid is cleaned.
2）The preparation of emitter is carried out at 1 back side of silicon base.BBr3 tubular type diffusion processes are carried out, at the back side of silicon base 1
Prepare pn-junction, p+ doped layers 4.Spread 970 DEG C of peak temperature.Diffused sheet resistance 90ohm/sq, and oxygen is passed through in the process.
After completing pn-junction and preparing, mask is overleaf prepared, the backside mask in the present embodiment is in BBr3 diffusion processes, is being expanded
A large amount of oxygen 20slm are passed through in the pyroprocess of day labor skill, oxidization time 90min forms Pyrex as mask.
3）Processing is performed etching to front in chain type cleaning equipment, using hydrofluoric acid and the mixed solution of nitric acid, is aligned
Face performs etching processing, and the back side remains with Pyrex and emitter below.
4）Surface-texturing is carried out in the front of silicon base 1.It is molten in trimethylammonium hydroxide using Pyrex as mask
Positive surface-texturing is completed in liquid, forms pyramid matte, matte size 2-5um.It is and laggard completing surface-texturing
Row has the cleaning of hydrofluoric acid and hydrochloric acid solution, and deionized water cleaning, drying etc..
5）Front-surface field preparation is carried out in the front of silicon base 1.In front using ion implantation device progress phosphorus injection, and
Tubular diffusion furnace carries out the annealing process of 60min or so, 850 DEG C of annealing temperature.Need to carry out after the completion of annealing molten containing HF
The cleaning of liquid, washing and drying course.
6）Positive backside passivation layer 5 is carried out, and front passivated reflection reducing is penetrated film 3 and prepared.Using enhanced etc. in the present embodiment
Ion chemical vapor deposition（PECVD）Method deposition 10-20nm aluminium oxide/60-70nm silicon nitride stack passivation layer
As backside passivation layer 5, back side refractive index 2.15.Silicon nitride using PECVD depositions 80nm is used as positive passivation and anti-reflection
Penetrate film, refractive index 2.03.And emitter is placed in the back side of solar cell, therefore in the system of the positive antireflective coating of solar cell
It when standby, and need not too much limit, overleaf during the passivation layer design of emitter surface, the shadow of scruple light transmission rate can not had to
Ring, overleaf can accomplish passivation most preferably, as shown in this embodiment, the silicon nitride progress of higher refractive index can be used blunt
Change, in the case of improving passivation effect, have no effect on the transmitance of front lighting.
7）The electrode slurry bed of material comprising conductive compositions is graphically formed in front and back.Selection is in light in the present embodiment
Face and the back side carry out the coating of electrocondution slurry, have carried out graphical distribution using screen printing mode, and use on two sides
Different types of electrocondution slurry, obverse and reverse is using being contain silver paste containing frit, formation front electrode 6 respectively
With backplate 7, the figure of front and back contains electrode main grid 8 and the thin grade of grid 9 part of electrode.
8）Carry out the first heat treatment process.Complete to heat in sintering furnace.500-900 DEG C of heat spike temperature.This
Temperature is actual measurement silicon chip surface temperature.It is 800 DEG C preferably to heat peak temperature in the present embodiment.
9）Carry out the second heat treatment process.Carry out laser radiation treatment process.In the present embodiment, to battery front side and instead
Face has carried out laser radiation treatment.Wherein the wavelength of irradiation laser is 532nm, facula area 200um*200um, and scanning is fast
Rate is 15000mm/s.
Next the process that other tests etc. can be completed.
Embodiment two
As Fig. 3, the preparation method of this N-shaped double-side solar cell are specific as follows：
1）Alkali making herbs into wool is carried out at a temperature of 70-80 degree using the KOH solution of 2%-3% to above-mentioned silicon base 1, and uses HF and HCl
Acid solution carries out surface clean.
2）Back side emitter pole preparation method is to use thermal oxide mode to grow 1nm silicon oxide layers as thin layer tunnelling passivation layer
10, then reuse the doped polysilicon layer 11 of low-pressure vapor phase chemical deposition deposition 100nm boron-dopings.The back of the body is formed by annealing
Face heterogeneous propellant pole structure.Square resistance is 90ohm/sq.
3）Cleaning is carved by the silicon nitride mask of back side enhanced chemical vapor deposition 100nm and the KOH alkali of 1%wt concentration
Process is removed around positive polysilicon is deposited on, and completes insulation processing.Use the cleaning of the solution of the acid containing HF.Then dried
It is dry.
4）Front-surface field 2 is carried out to prepare.The whole face injection of phosphorus is carried out using ion implanting in the front of battery, by annealing
Positive sheet resistance afterwards is 80-90ohm/sq.
5）Positive backside passivation layer 5 is carried out, and front passivated reflection reducing is penetrated film 3 and prepared.Using enhanced etc. in the present embodiment
Ion chemical vapor deposition（PECVD）Method deposition 10-20nm aluminium oxide/60-70nm silicon nitride stack passivation layer
As backside passivation layer 5, back side silicon nitride silicon refractive index 2.15.Silicon nitride using PECVD depositions 80nm is used as positive passivation
And antireflective coating.
6）It is graphical to form the electrode slurry bed of material for including conductive compositions.In the present embodiment selection smooth surface and the back side into
The coating of row electrocondution slurry, as shown in Fig. 2, the figure in the present embodiment in front and back is identical.Use silk-screen printing
Mode has carried out graphical distribution, and different types of electrocondution slurry has been used on two sides, front and back using be containing
Have frit contains silver paste, forms front electrode 6 respectively and backplate 7, the figure of front and back contain electrode main grid 8
9 grade part of grid thin with electrode.
7）It is sintered process.Complete to heat in sintering furnace.500-900 DEG C of heat spike temperature.This temperature
Spend to survey silicon chip surface temperature.It is 850 DEG C preferably to heat peak temperature in the present embodiment.
8）Carry out laser radiation treatment process.In the present embodiment, laser irradiation has been carried out to battery front side and the back side
Processing.Wherein the wavelength of irradiation laser is 1064nm, facula area 1mm*1mm, sweep speed 20000mm/s.
Embodiment three
It is specific as follows as an example, the preparation method of this N-shaped double-side solar cell：
1）Damage and cleaning treatment are gone to n-type silicon substrate 1.Handled using NaOH solution carrying out damage, and using hydrofluoric acid,
Hydrochloric acid mixed solution is cleaned.
2）The preparation of emitter is carried out at 1 back side of silicon base.BBr3 tubular type diffusion processes are carried out, at the back side of silicon base 1
Prepare pn-junction.Spread 970 DEG C of peak temperature.Diffused sheet resistance 90ohm/sq, and oxygen is passed through in the process.Complete pn-junction
After preparation, mask is overleaf prepared, the backside mask in the present embodiment is in BBr3 diffusion processes, in the height of diffusion technique
A large amount of oxygen 20slm are passed through during temperature, oxidization time 90min forms Pyrex as mask.
3）Processing is performed etching to front in chain type cleaning equipment, using hydrofluoric acid and the mixed solution of nitric acid, is aligned
Face performs etching processing, and the back side remains with Pyrex and emitter below.
4）Surface-texturing is carried out in the front of silicon base 1.It is molten in trimethylammonium hydroxide using Pyrex as mask
Positive surface-texturing is completed in liquid, forms pyramid matte, matte size 2-5um.It is and laggard completing surface-texturing
Row has the cleaning of hydrofluoric acid and hydrochloric acid solution, and deionized water cleaning, drying etc..
5）Front-surface field preparation is carried out in the front of silicon base 1.In front using ion implantation device progress phosphorus injection, and
Tubular diffusion furnace carries out the annealing process of 60min or so, 850 DEG C of annealing temperature.Need to carry out after the completion of annealing molten containing HF
The cleaning of liquid, washing and drying course.
6）Positive backside passivation layer 5 is carried out, and front passivated reflection reducing is penetrated film 3 and prepared.The side of PECVD is used in the present embodiment
The silicon nitride stack passivation layer of aluminium oxide/60-70nm of the deposition 10-20nm of method is as passivating back and antireflection layer, the back side
Refractive index of silicon nitride 2.15.Silicon nitride using PECVD depositions 80nm is used as positive passivating film.
7）It is graphical to form the electrode slurry bed of material for including conductive compositions.In the present embodiment selection smooth surface and the back side into
The coating of row electrocondution slurry, as shown in Fig. 2, the figure in the present embodiment in front and back is identical.Use silk-screen printing
Mode has carried out graphical distribution, and different types of electrocondution slurry has been used on two sides, and the front and back back side uses
To contain silver paste containing frit, form front electrode 6 respectively and backplate 7, the figure of front and back contain electrode
Main grid 8 and the thin grade of grid 9 part of electrode.
8）Carry out the first heat treatment process.Complete to heat in sintering furnace.500-900 DEG C of heat spike temperature.This
Temperature is actual measurement silicon chip surface temperature.It is 800 DEG C preferably to heat peak temperature in the present embodiment.
9）Carry out the second heat treatment process.Quickly heated using chain type annealing furnace, 700 DEG C of peak temperature.Its
In more than 600 DEG C time 1min.
In addition, the above embodiment of the present invention is example, have makes with the technological thought described in claims of the present invention
Identical process concurrency wave the technical solution of identical action effect, be all contained in the present invention.
Claims (14)
- A kind of 1. preparation method of N-shaped double-side solar cell, it is characterised in that：Comprise the following steps,Step 1, carry out n-type silicon substrate damaging layer or texturing processing and cleaning treatment；Step 2, the preparation in silicon substrate bottom back side progress emitter；Step 3, carry out insulation processing；Step 4, silicon base front carry out front-surface field preparation；Prepared by step 5, the passivation of smooth surface and antireflective coating, and prepared by backside passivation layer；Step 6, in front and back graphically form the electrode slurry bed of material comprising conductive compositions；Step 7, carry out the first heat treatment process；Step 8, carry out the second heat treatment process.
- 2. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：In step 2 prepared by emitter Using the p-type homogeneity emitter that formation is directly adulterated in substrate, or the polysilicon or non-crystalline silicon that depositing p-type adulterates in substrate The heterogeneous propellant pole of formation.
- 3. the preparation method of N-shaped double-side solar cell as claimed in claim 2, it is characterised in that：Using heterogeneous propellant pole During preparation, one layer of tunnelling passivation layer is formed between silicon base and DOPOS doped polycrystalline silicon or non-crystalline silicon.
- 4. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：Front-surface field is adopted in step 4 With the n-type surface field that formation is directly adulterated in substrate, or depositing n-type adulterates in substrate polysilicon or amorphous silicon layer and shape Into foreign surfaces field, front-surface field uses whole face or local setting.
- 5. the preparation method of N-shaped double-side solar cell as claimed in claim 4, it is characterised in that：Using heterogeneous back side emitter During pole, one layer of tunnelling passivation layer is formed between the polysilicon or non-crystalline silicon that silicon base and p-type are adulterated.
- 6. the preparation method of the N-shaped double-side solar cell as described in claim 3 or 5, it is characterised in that：Tunnelling passivation layer uses One kind in intrinsic amorphous silicon, silica, aluminium oxide, titanium oxide, silicon nitride, silicon oxynitride and carborundum.
- 7. the preparation method of N-shaped double-side solar cell as claimed in claim 5, it is characterised in that：The tunnelling passivation layer Thickness 0.5nm ~ 3nm.
- 8. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：It is graphical to form electrode slurry The method of the bed of material is printing process, ink-jet, laser transfer or 3D printing method.
- 9. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：First heat treatment process is Sintering process, the peak temperature that sintering processes process uses are 500 ~ 950 DEG C.
- 10. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：Make during Passivation Treatment With the silica, aluminium oxide, nitridation of the formation of Atomic layer deposition method, enhanced method of plasma vapour deposition or heat growth method Silicon, silicon oxynitride, or two of which or more than two compositions are passivated.
- 11. the preparation method of N-shaped double-side solar cell as claimed in claim 1, it is characterised in that：Second heat treatment method is Laser irradiation treatment method or quick heat treatment method.
- 12. the preparation method of N-shaped double-side solar cell as claimed in claim 11, it is characterised in that：Laser radiation treatment side Method utilizes more than the large spot once irradiating of solar cell sizes, or is swept using the hot spot less than solar-electricity pool area Retouch formula irradiation, umber of exposures for once and more than.
- 13. the preparation method of N-shaped double-side solar cell as claimed in claim 11, it is characterised in that：Laser irradiating method makes The wavelength of laser is 300 ~ 1100nm, and laser irradiating method irradiates whole battery surface or only to electrode zone Carry out radiation treatment.
- 14. the preparation method of N-shaped double-side solar cell as claimed in claim 11, it is characterised in that：Quick heat treatment method The peak temperature used is 600 ~ 1000 DEG C.
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Application publication date: 20180515 |