CN103956410A - Manufacturing method of N-type back junction solar battery - Google Patents
Manufacturing method of N-type back junction solar battery Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000005297 pyrex Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a manufacturing method of an N-type back junction solar battery. The manufacturing method of the N-type back junction solar battery comprises the step (1) of cleaning and texture surface making; the step (2) of phosphorus diffusion of the front surface of a silicon wafer; the step (3) of etching of the back surface of the silicon wafer and polishing; the step (4) of printing boron slurry on the back surface of the silicon wafer and forming a light-doping PN junction after drying and annealing; the step (5) of low-temperature oxidation; the step (6) of depositing an aluminum oxide passive film on the back surface of the silicon wafer; the step (7) of depositing a silicon nitride passive layer; the step (8) of forming an opening through laser, and printing aluminum slurry or sputtering an aluminum metal film in the position of the opening; the step (9) of printing silver slurry on the front surface, and jointly sintering the front surface and the back surface. According to the manufacturing method of the N-type back junction solar battery, a B/Al heavy doping and B light doping selective emitter electrode structure is formed on the back surface of the silicone wafer through two different doping media, and the cooperative use of the two different doping media resolves the problems in the prior art that the surface recombination is serious and a battery piece is bent due to large-area doping of the aluminum slurry.
Description
Technical field
The present invention relates to application of solar, relate in particular to a kind of preparation method of N-type back junction solar battery.
Background technology
Since entering this century, photovoltaic industry becomes fastest-rising new high-tech industry in the world.In all kinds of solar cells, crystalline silicon (monocrystalline, polycrystalline) solar cell occupies extremely important status, has occupied at present more than 75% share in photovoltaic market.Crystal silicon solar energy battery utilizes the photovoltaic effect of p ~ n knot to realize opto-electronic conversion, and from the viewpoint of development, crystal silicon solar energy battery will dominate in very long a period of time in future.
The manufacturing process of existing crystal silicon solar energy battery is: surface clean and texturing, diffusion, etching trimming, coated with antireflection film, silk screen printing, sintering form ohmic contact, test.This commercialization crystal silicon cell manufacturing technology is relatively simple, cost is lower, is applicable to industrialization, automated production, thereby is widely applied.Wherein, diffusion is core process; Traditional diffusion technology there will be higher contact resistance and more serious dead layer problem at emitter region, and be only the problem that cannot simultaneously solve contact resistance and dead layer by adjusting the processing procedure of a step diffusion technology, so traditional diffusion technology has limited the raising of short circuit current, open circuit voltage, fill factor, curve factor and efficiency.
In order to take into account the needs of open circuit voltage, short circuit current and fill factor, curve factor simultaneously, selective emitter solar battery is ideal selection, carries out heavy doping at electrode contact position, and between electrode, light dope is carried out in position.Such structure can increase short wave response and reduce surface recombination, and before reducing, the contact resistance of electrode and emitter region, is all improved short circuit current, open circuit voltage and fill factor, curve factor preferably simultaneously, finally improves conversion efficiency.
Crystal silicon solar cell with selective emitter just has bibliographical information mistake as far back as the nineties in last century, prepares now crystal silicon solar cell with selective emitter technology and emerges in an endless stream, and cost and efficiency are also uneven.
For N-type solar cell, the method for preparing selective emitter solar battery is as follows: (1) is cleaned, making herbs into wool; (2) high-temperature oxydation, forms oxidation barrier layer at silicon chip surface; (3) etching is removed back side oxide layer; Polishing; (4) at the back up aluminium paste of silicon chip, after oven dry, high temperature sintering, form Al-p+ emitter junction; (5) adopt successively dense HCl solution and KOH solution corrosion to remove Al slurry and the Al-Si Eutectic Layer on emitters on back side surface; (6) silicon chip is carried out to the diffusion of one side phosphorus back-to-back, front side of silicon wafer is diffusingsurface; (7) low-temperature oxidation, generates silica passivation layer; (8) at the backside deposition aluminium oxide passivation film of silicon chip; (9) silicon chip just, respectively deposited silicon nitride passivating film of the back side; (10) adopt laser opening at silicon chip back side, printing aluminium paste or sputtered aluminum metal film, oven dry; (11) at the positive printed silver slurry of silicon chip, just, the back side burns altogether, forms Al/Al-p+ selectivity back junction solar battery.
But, there are the following problems for said method: in (1) step (4), adopt aluminium paste sintering to form Al/Al-p+ selective emitter, but aluminium impurity can cause the compound serious of emitter region, and, aluminum slurry and Al-Si Eutectic Layer residual after aluminium paste doping need to adopt dense HCl solution and KOH solution corrosion to remove, but in the process of cleaning in corrosion, waste liquid is difficult for processing, and causes severe contamination; (2) practical application is found, because the aluminium stress problem of bringing of adulterating also can make cell piece bend, has affected outward appearance and the photoelectric properties of battery.
Summary of the invention
The object of the invention is to provide a kind of preparation method of N-type back junction solar battery.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation method of N-type back junction solar battery, comprises the steps:
(1) cleaning, making herbs into wool;
(2) front side of silicon wafer phosphorus diffusion, forms front-surface field, and diffusion square resistance is 50 ~ 75 Ω ∕;
(3) the etching silicon wafer back side, removes oxide layer; Then in TMA solution, carry out polishing; Clean phosphorosilicate glass and the back side Liquid Residue of removing front side of silicon wafer;
(4) at silicon chip back side printing boron slurry, after drying, annealing, form doped with P N knot;
Described bake out temperature is 200 ~ 300 DEG C, belt speed 250 ~ 350 cm/min;
Described annealing temperature is 900 ~ 940 DEG C, times 25 ~ 40 min, and after annealing, square resistance is 90 ~ 100 Ω ∕; Clean and remove Pyrex;
(5) low-temperature oxidation, temperature is 500 ~ 600 DEG C, times 45 ~ 90 min generates silica passivation layer at silicon chip surface;
(6) at the backside deposition aluminium oxide passivation film of silicon chip, film thickness monitoring is in 10 ~ 100 nanometers;
(7) in front side of silicon wafer and back side deposited silicon nitride passivation layers respectively;
(8) on above-mentioned passivation layer, adopt laser opening, and print aluminium paste or sputtered aluminum metal film;
(9), at the positive printed silver slurry of silicon chip, just, back side co-sintering, can obtain N-type back junction solar battery.
Above, the TMA solution in described step (3) is prior art, refers to trimethyl aluminium solution, for polishing.
In technique scheme, in described step (3), the temperature of described polishing fluid is 75 ~ 85 DEG C, 50 ~ 300 seconds time.Preferably 80 DEG C of the temperature of polishing fluid.
In technique scheme, in described step (7), the thickness of silicon nitride passivation is 50 ~ 200 nanometers.
Because technique scheme is used, the present invention has following advantages:
1, the present invention has designed a kind of preparation method of new N-type back junction solar battery, utilizes two kinds of different doped dielectrics to form B/Al heavy doping, the lightly doped selective emitting electrode structure of B at silicon chip back side; Being used in conjunction with of two kinds of different doped dielectrics, has solved the problems such as the serious and cell piece bending of the surface recombination brought of adulterating of aluminium paste large area in prior art, needs to adopt the technique of dense HCl solution and KOH solution corrosion after having avoided aluminium paste to adulterate, and has prevented pollution;
2, preparation method of the present invention has realized B/Al heavy doping, the lightly doped selective emitting electrode structure of B, has solved B in prior art and has starched a difficult problem that is difficult to realize heavily doped emitter, has positive realistic meaning;
3, the present invention is in adopting two kinds of different doped dielectrics to realize back side selective emitting electrode structure, also utilize the contact electrode of the heavily doped aluminium paste in the back side as the back side, thereby greatly simplify technological process, save cost, improve open circuit voltage and fill factor, curve factor simultaneously, promoted the photoelectric conversion efficiency of battery; Evidence: compared with prior art, photoelectric conversion efficiency of the present invention can promote 0.24% left and right, has obtained beyond thought effect;
4, the present invention adopts aluminium oxide, silicon nitride stack passivation at silicon chip back side, has further solved the serious problem of back of the body surface recombination, has greatly improved the open circuit voltage of battery.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment mono-
A preparation method for N-type back junction solar battery, comprises the steps:
(1) adopt n type single crystal silicon be substrate, by silicon chip clean, making herbs into wool; The resistivity of n type single crystal silicon substrate is 3 ~ 12 Ω cm, and thickness is 170 ~ 200 microns, and minority carrier life time is 1 ~ 3 ms;
(2) above-mentioned silicon chip is carried out back-to-back to one side diffusion phosphorus impurities, the diffusingsurface of silicon chip is positive; Square resistance control range is 50 ~ 75 Ω ∕;
(3) etching is carried out in the back side of above-mentioned silicon chip, remove and expand the oxide layer that phosphorus forms; Polishing in 25% TMA solution, polishing fluid temperature is 80 DEG C, time 50 ~ 300s; Clean and remove front phosphorosilicate glass and back side Liquid Residue;
(4) at the back up boron slurry of above-mentioned silicon chip, after drying, annealing, form doped with P N knot, bake out temperature is 200 ~ 300 DEG C, belt speed 250 ~ 350 cm/min; Annealing temperature is 900 ~ 940 DEG C, times 25 ~ 40 min, and square resistance control range is 90 ~ 100 Ω ∕, cleans and removes Pyrex;
(5) by above-mentioned silicon chip low-temperature oxidation in tube furnace, temperature is 500 ~ 600 DEG C, and time 45 ~ 90min generates silica passivation layer;
(6) adopt the backside deposition aluminium oxide passivation film of technique for atomic layer deposition at above-mentioned silicon chip, film thickness monitoring is in 10 ~ 100 nanometers;
(7) above-mentioned silicon chip just, respectively deposited silicon nitride passivating film of the back side, film thickness monitoring is in 50 ~ 200 nanometers;
(8) adopt laser opening at the back side of above-mentioned silicon chip, printing aluminium paste or sputtered aluminum metal film, oven dry;
(9) at the positive printed silver slurry of silicon chip, just, the back side burns altogether, forms selectivity transmitting back junction solar battery.
Comparative example one
A preparation method for N-type back junction solar battery, according to method of the prior art, comprises the steps:
(1) adopting n type single crystal silicon same as the previously described embodiments is substrate, by silicon chip clean, making herbs into wool;
(2) above-mentioned silicon chip is carried out to high-temperature oxydation, form oxidation barrier layer at silicon chip surface;
(3) above-mentioned silicon chip is carried out to etching, remove back side oxide layer; Polishing in 25% TMA solution, polishing fluid temperature is 80 DEG C, time 50 ~ 300s;
(4) at the back up aluminium paste of above-mentioned silicon chip, after oven dry, high temperature chain type sintering, form Al-p+ emitter junction, bake out temperature is 200 ~ 300 DEG C, belt speed 250 ~ 350 cm/min; Sintering maximum temperature is 940 ~ 970 DEG C, belt speed 150 ~ 250 min, and junction depth scope is 6 ~ 9 microns;
(5) adopt dense HCl and KOH solution corrosion to remove Al slurry and Al-Si Eutectic Layer and the positive oxidation barrier film on emitters on back side surface, junction depth remains on 2 ~ 3 microns, cleaning silicon chip;
(6) above-mentioned silicon chip is carried out back-to-back to one side diffusion phosphorus impurities, front side of silicon wafer is diffusingsurface, and square resistance control range is 50 ~ 75 Ω ∕, removes phosphorosilicate glass;
(7) by above-mentioned silicon chip low-temperature oxidation in tube furnace, temperature is 500 ~ 600 DEG C, and time 45 ~ 90min generates silica passivation layer;
(8) adopt the backside deposition aluminium oxide passivation film of technique for atomic layer deposition at above-mentioned silicon chip, film thickness monitoring is in 10 ~ 100 nanometers;
(9) above-mentioned silicon chip just, respectively deposited silicon nitride passivating film of the back side, film thickness monitoring is in 50 ~ 200 nanometers;
(10) adopt laser opening at the back side of above-mentioned silicon chip, printing aluminium paste or sputtered aluminum metal film, oven dry;
(11) at the positive printed silver slurry of silicon chip, just, the back side burns altogether, forms Al/Al-p+ selectivity back junction solar battery.
Photoelectric conversion efficiency and the electrical property of testing the solar cell that described embodiment mono-and comparative example one obtain, result sees table:
| ? | Uoc | Isc | Rs | Rsh | FF | NCell | Irev1 |
| Embodiment mono- | 0.6512 | 9.1518 | 0.0016 | 207.16 | 79.5 | 19.83% | 0.0921 |
| Comparative example one | 0.6485 | 9.0907 | 0.0017 | 346.81 | 79.4 | 19.59% | 0.0723 |
The battery efficiency of the solar cell that as seen from the above table, the method for employing embodiment mono-obtains has very large lifting.Electric current and the lifting of opening pressure be on the one hand to form shallow doping because the back side adopts boron slurry, reduced seriously compound in PN junction district of electron hole pair; Be to form heavily doped region because the back side adopts boron, the doping of aluminium impurity on the other hand, can obtain good ohmic contact, reduce series resistance, promote FF.
And in the preparation process of comparative example one, cleaning back side Al slurry and Al-Si Eutectic Layer easily pollutes, back aluminium doping also can affect front phosphorus and diffuse into the quality of knot, affect electric current, open lifting and the stability of pressure, and the doping of gross area aluminium paste can cause the problems such as silicon chip is serious bending, technological process is complicated, and therefore the method is not suitable for volume production.
Claims (3)
1. a preparation method for N-type back junction solar battery, is characterized in that, comprises the steps:
(1) cleaning, making herbs into wool;
(2) front side of silicon wafer phosphorus diffusion, forms front-surface field, and diffusion square resistance is 50 ~ 75 Ω ∕;
(3) the etching silicon wafer back side, removes oxide layer; Then in TMA solution, carry out polishing; Clean phosphorosilicate glass and the back side Liquid Residue of removing front side of silicon wafer;
(4) at silicon chip back side printing boron slurry, after drying, annealing, form doped with P N knot;
Described bake out temperature is 200 ~ 300 DEG C, belt speed 250 ~ 350 cm/min;
Described annealing temperature is 900 ~ 940 DEG C, times 25 ~ 40 min, and after annealing, square resistance is 90 ~ 100 Ω ∕; Clean and remove Pyrex;
(5) low-temperature oxidation, temperature is 500 ~ 600 DEG C, times 45 ~ 90 min generates silica passivation layer at silicon chip surface;
(6) at the backside deposition aluminium oxide passivation film of silicon chip, film thickness monitoring is in 10 ~ 100 nanometers;
(7) in front side of silicon wafer and back side deposited silicon nitride passivation layers respectively;
(8) on above-mentioned passivation layer, adopt laser opening, and print aluminium paste or sputtered aluminum metal film;
(9), at the positive printed silver slurry of silicon chip, just, back side co-sintering, can obtain N-type back junction solar battery.
2. preparation method according to claim 1, is characterized in that: in described step (3), the temperature of described polishing fluid is 75 ~ 85 DEG C, 50 ~ 300 seconds time.
3. preparation method according to claim 1, is characterized in that: in described step (7), the thickness of silicon nitride passivation is 50 ~ 200 nanometers.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835875A (en) * | 2015-04-20 | 2015-08-12 | 上海大族新能源科技有限公司 | Preparation method and side edge laser isolation method for crystalline silicon solar cell |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN105702758A (en) * | 2016-04-14 | 2016-06-22 | 泰州中来光电科技有限公司 | Preparation method of back junction N type solar battery, back junction N type solar battery, back junction N type solar battery assembly and back junction N type solar battery system |
| CN105742410A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Back-junction N-type crystal-silicon solar cell and fabrication method, module and system thereof |
| CN105780127A (en) * | 2016-04-05 | 2016-07-20 | 盐城阿特斯协鑫阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN107863417A (en) * | 2017-10-31 | 2018-03-30 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of n-type solar cell |
| CN108039374A (en) * | 2017-10-31 | 2018-05-15 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of N-shaped double-side solar cell |
| CN109449248A (en) * | 2018-09-17 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of high efficiency SE-PERC solar battery |
| CN111739985A (en) * | 2020-08-21 | 2020-10-02 | 浙江晶科能源有限公司 | Solar cell and preparation method of selective emitter thereof |
| CN115881853A (en) * | 2023-02-10 | 2023-03-31 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
| CN116741892A (en) * | 2023-08-16 | 2023-09-12 | 常州亿晶光电科技有限公司 | Preparation method of boron doped selective emitter battery |
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