CN109449248A - A kind of preparation method of high efficiency SE-PERC solar battery - Google Patents
A kind of preparation method of high efficiency SE-PERC solar battery Download PDFInfo
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- CN109449248A CN109449248A CN201811080648.9A CN201811080648A CN109449248A CN 109449248 A CN109449248 A CN 109449248A CN 201811080648 A CN201811080648 A CN 201811080648A CN 109449248 A CN109449248 A CN 109449248A
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- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 238000002310 reflectometry Methods 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 92
- 229910052710 silicon Inorganic materials 0.000 claims description 92
- 239000010703 silicon Substances 0.000 claims description 92
- 239000011521 glass Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 239000011267 electrode slurry Substances 0.000 claims description 12
- 208000020442 loss of weight Diseases 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 15
- 239000003513 alkali Substances 0.000 abstract description 11
- 235000008216 herbs Nutrition 0.000 abstract description 10
- 210000002268 wool Anatomy 0.000 abstract description 8
- 238000012546 transfer Methods 0.000 abstract description 4
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- 239000000654 additive Substances 0.000 description 6
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- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
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- 238000004260 weight control Methods 0.000 description 4
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Abstract
The invention discloses a kind of preparation methods of high efficiency SE-PERC solar battery comprising the step of making herbs into wool, diffusion, the back side go to PSG, alkali polishing, positive heavy doping, front to go PSG, annealing, deposition passivating film, deposition antireflective film, back side aperture, electrode print, sintering annealing；The present invention effectively reduces rear surface of solar cell reflectivity by the polishing of back side alkali, so that long-wave band transmissivity is substantially reduced, to reduce the transmission loss of light, increases current density, J sc, and then improve the transfer efficiency of SE-PERC solar battery.
Description
Technical field
The present invention relates to crystal silicon solar energy battery field more particularly to a kind of high efficiency SE-PERC solar batteries
Preparation method.
Background technique
SE-PERC solar battery is one of most popular high-efficiency battery currently on the market, by front laser heavy doping
Technology (SE) is combined with localized contact back passivating technique (PERC), greatly improves the efficiency of solar battery.SE-PERC is too
Positive energy battery successively includes back electrode, back electric field, SiNx/Al from the bottom up2O3Lamination, P-type silicon, N++ layers, N+ layers, silica,
Silicon nitride and positive electrode, N++ layers are realized by the phosphorus in front laser threat warner phosphorosilicate glass (PSG).Existing SE-PERC battery
Preparation method be divided into two kinds；One kind is acid etch the preparation method, preparation flow are as follows: making herbs into wool-diffusion-front laser-acid system is carved
PSG- annealing-backside deposition passivating film-deposition antireflective film-backside laser aperture-back electrode, back electric field and positive electricity are removed in erosion polishing
Pole printing-firing annealing；Another kind is alkaline etching method, preparation flow are as follows: making herbs into wool-diffusion-front laser-goes back side PSG- to carry on the back
Face alkaline etching polishes-goes positive PSG- annealing-backside deposition passivating film-front deposition antireflective film-backside laser aperture-back electricity
Pole, back electric field and positive electrode printing-firing annealing.Red in the preparation process of SE-PERC battery, the method for etching polishing affects
Its efficiency；Although acid system polishes, process is simple, it is low by reflectivity, and light projection loss is big, and transformation efficiency is low；Though alkaline process polishes
The promotion of back reflection rate is so realized by alkali polishing, but does not promote solar battery transformation efficiency significantly yet, therefore having must
The preparation method of SE-PERC battery is improved.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is that providing a kind of high efficiency SE-PERC solar battery
Preparation method can effectively promote solar battery back reflectivity, while not influence positive sheet resistance；Effectively promote solar battery
Transfer efficiency.
The present invention also technical problems to be solved are, provide a kind of high efficiency SE-PERC solar battery, conversion effect
Rate is high.
In order to solve the above-mentioned technical problem, reach corresponding technical effect, the present invention provides a kind of SE-PERC batteries
Preparation method successively includes:
(1) in the two-sided formation flannelette of silicon wafer；
(2) phosphorus diffusion is carried out in silicon chip surface；
(3) phosphorosilicate glass of silicon chip back side is removed；
(4) it is polished using lye silicon chip back side；
(5) laser heavy doping is carried out to front side of silicon wafer；
(6) phosphorosilicate glass of the front side of silicon wafer removed；
(7) silicon wafer is made annealing treatment；
(8) passivating film is deposited in silicon chip back side；
(9) antireflective film is deposited in front side of silicon wafer；
(10) laser opening is carried out to silicon chip back side；
(11) back electrode slurry, aluminium paste are printed in silicon chip back side；Front print positive electrode slurry is simultaneously dried；
(12) silicon wafer for obtaining step (11) carries out high temperature firing, forms back electrode, aluminum back electric field and positive electrode, obtains high
Efficiency SE-PERC solar battery finished product.
As an improvement of the above technical solution, in step (2), silicon wafer sheet resistance is 90-150 Ω/sq after phosphorus diffusion；Step
(5) in, silicon wafer heavily doped region sheet resistance and undoped region sheet resistance difference are 25-45 Ω/sq.
As an improvement of the above technical solution, in step (7), front side of silicon wafer laser heavily doped region sheet resistance is 60- after annealing
80Ω/sq。
As an improvement of the above technical solution, in step (4), silicon wafer loss of weight is 0.3-0.5g；Silicon chip back side is anti-after polishing
Penetrating rate is 30-55%.
As an improvement of the above technical solution, in step (3) and step (6), phosphorosilicate glass is removed using HF solution, HF is molten
Liquid mass concentration is 3-10%.
As an improvement of the above technical solution, in step (8), passivating film Al2O3/SiNxFilm；It is with a thickness of 110-
150nm。
As an improvement of the above technical solution, in step (9), antireflective film is silicon nitride film；It is with a thickness of 65-80nm；It is heavy
Front side of silicon wafer refractive index is 2-2.5 after product antireflective film.
As an improvement of the above technical solution, in step (10), percent opening 3-10%.
As an improvement of the above technical solution, in step (11), sintering temperature is 300-900 DEG C.
Correspondingly, using above-mentioned preparation method system the invention also discloses a kind of high efficiency SE-PERC solar battery
It is standby to form.
The present invention goes to PSG, alkali polishing, positive heavy doping, front to go PSG, annealing, deposition blunt by making herbs into wool, diffusion, the back side
Change film, deposition antireflective film, back side aperture, electrode print, the technique for being sintered annealing, the SE- of high transformation efficiency has been prepared
PERC solar battery；The beneficial effects of the practice of the present invention is as follows:
1, the present invention effectively improves rear surface of solar cell reflectivity by the polishing of back side alkali, so that long-wave band transmissivity
It is substantially reduced, to reduce the transmission loss of light, increases current density, J sc, and then improve SE-PERC solar battery
Transfer efficiency.
2, the present invention is effectively prevented by the sequence of the change heavy doping of front laser and back side alkali polishing process in tradition
Sheet resistance caused by surface phosphorus pitches in alkali polishing process rises problem, it is therefore prevented that silver-colored silicon contact is poor after electrode print, reduces battery
The problem of transformation efficiency.Solar battery transformation efficiency can be promoted to >=21.95% by preparation flow through the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, it is not used to
Limit the present invention.
The present invention provides a kind of preparation method of high efficiency SE-PERC solar battery, successively includes:
(1) in the two-sided formation flannelette of silicon wafer；
Using wet etching technique, in the two-sided formation flannelette of silicon wafer；Specifically, taking the monocrystalline silicon piece of 800pcs；Using wet
Method lithographic technique performs etching, and forms the flannelette with inverted pyramid structure.Preferably, after making herbs into wool, silicon wafer loss of weight 0.4-0.8g,
Preferably 0.4-0.6g；After making herbs into wool, silicon wafer reflectivity is 9-15%；Preferably 10-15%, further preferably 13-
15%；The reflectivity of silicon wafer is conducive to later period control solar battery for the reflectivity of sunlight after control making herbs into wool, effectively increases
Add solar battery to the absorptivity of sunlight, promotes conversion efficiency of solar cell.
(2) phosphorus diffusion is carried out in silicon chip surface；
By low pressure diffusion technique, phosphorus diffusion is carried out in silicon chip surface；Preferably, the sheet resistance of silicon wafer is 90-150 after diffusion
Ω/sq is further preferably 120-150 Ω/sq；The sheet resistivity for promoting silicon wafer, can reduce surface dopant concentration, not only may be used
To improve the shortwave effect of battery, short circuit current is improved；And dark saturation current caused by surface recombination can be made to reduce, open circuit
Voltage increases；Optimize battery performance.
(3) phosphorosilicate glass of silicon chip back side is removed；
Wherein use HCl solution, HNO3Solution or HF solution remove silicon chip back side phosphorosilicate glass；Preferably, molten using HF
Liquid removes silicon chip back side phosphorosilicate glass；HF concentration of polymer solution is 3%-10%.HF solution can rapidly remove silicon chip back side
Phosphorosilicate glass；Prevent that the reaction time is too long and silicon wafer is caused to damage.
(4) silicon chip back side is polished using lye；
Wherein silicon chip back side is polished using the KOH containing additive or NaOH solution；Preferably, KOH is being filled
Silicon chip back side is polished in the polishing trough of (containing additive) solution；It is further preferred that the mass concentration of KOH solution is
5%-20%, further preferably 10-20%.KOH solution alkalinity is strong, and polishing action is more obvious.
Preferably, silicon wafer loss of weight is 0.3-0.5g in polishing process；Silicon chip back side reflectivity is 30-55% after polishing, into
One step is preferably 40-55%.Alkali polishes the reflectivity that can effectively promote silicon chip back side, so that long-wave band transmissivity obviously drops
It is low, to reduce the transmission loss of light, current density, J sc is increased, and then improve the conversion of SE-PERC solar battery
Efficiency.
It should be noted that in the cell process that traditional acid etching processes prepare SE-PERC solar energy, using HF with
HNO3Mixed solution carry out silicon chip back side polishing；However the back reflection rate after its polishing is low, generally below 30%；Reduce too
The absorption of sunlight, reduces current density, reduces the transfer efficiency of solar battery.The present invention, which uses, contains additive
KOH solution is polished, and rear surface of solar cell reflectivity can be effectively promoted.
(5) laser heavy doping is carried out to front side of silicon wafer；
Using Supreme Being, your laser carries out positive doping；Laser doping improves electrode district doping concentration；Reduce silver paste and silicon
Ohmic contact between piece, and then improve fill factor；Improve the performance of solar battery.Preferably, after heavy doping, silicon
Piece heavily doped region sheet resistance be doped region sheet resistance difference be 25-45 Ω/sq, preferably 30-45 Ω/sq；Heavily doped strays
Polar region sheet resistance can promote solar battery transformation efficiency within this range.
(6) phosphorosilicate glass of front side of silicon wafer is removed；
Wherein use HCl solution, HNO3Solution or HF solution remove front side of silicon wafer phosphorosilicate glass；Preferably, molten using HF
Liquid removes front side of silicon wafer phosphorosilicate glass；HF concentration of polymer solution is 3%-10%.HF solution can rapidly remove front side of silicon wafer
Phosphorosilicate glass；Prevent that the reaction time is too long and silicon wafer is caused to damage.
It should be noted that it is generally believed that it is to mix that laser heavy doping, which is using the phosphorosilicate glass generated during phosphorus diffusion,
Phosphorus in phosphorosilicate glass layer is advanced to silicon wafer depths by laser irradiation, and then forms heavily doped region by miscellaneous source；I.e. in phosphorus doping
Laser heavy doping is directly carried out afterwards, the doped source with higher concentration can be ensured, so as to reduce heavy doping to the full extent
The sheet resistance in area promotes the Ohmic contact of electrode and egative film, promotes solar battery transformation efficiency.Present invention employs entirely different
Technology path, first carried out the back side removal phosphorosilicate glass and polished backside technique；Front laser heavy doping is carried out again；According to
Conventional thought can remove partial elevational phosphorosilicate glass, during reduction laser heavy doping during removing back side phosphorosilicate glass
Phosphorus source, to promoted solar battery transformation efficiency it is unfavorable.However, the present invention overcomes such prejudice by research, by big
Quantifier elimination proves that dephosphorization is gone in middle back side removal phosphorosilicate glass-polished backside-front laser heavy doping-front through the invention
The technique of silica glass, not only without reduce heavily doped region sheet resistance (doped region sheet resistance be doped region sheet resistance difference be 25-45
Ω/sq)；Alkali polishes so that the forfeiture of heavily doped region phosphorus, promotes asking for sheet resistance during also effectively overcoming traditional alkaline etching simultaneously
Topic；SE-PERC solar battery efficiency is improved nearly 1%, achieves unexpected technical effect.
Preferably, passing through heavy doping of the present invention, after removing phosphorosilicate glass, front side of silicon wafer laser heavily doped region sheet resistance is
60-80Ω/sq；Before alkali polishing process is placed in laser heavy doping technique by the present invention, traditional alkali polishing process is effectively prevented
Middle the problem of washing off the loose phosphorus in laser heavily doped region surface；It ensure that heavily doped region low square resistance；To improve Ohmic contact；
Improve the transformation efficiency of solar battery.
(7) silicon wafer is made annealing treatment；
It is made annealing treatment using hot oxygen；Preferably, temperature is controlled at 500-800 DEG C after annealing；Further preferably
500-600℃.Annealing process can effectively aoxidize silicon wafer, play the role of passivation, compound so as to reduce interface,
Open-circuit voltage is improved, product yield is improved.
(8) passivating film is deposited in the silicon chip back side that step (7) obtains；
Wherein, the passivating film is Al2O3/SiNxFilm；PECAD can be used and deposit the passivating film；Preferably, deposition of thick
Degree is 110-150nm.It is compound that passivating film can effectively reduce silicon chip back side, improves open-circuit voltage, promotes solar battery conversion effect
Rate.
(9) antireflective film is deposited in front side of silicon wafer；
Wherein, the antireflective film is silicon nitride film；PECAD method can be used and deposit the antireflective film；Preferably, deposition thickness
For 65-80nm；Front side of silicon wafer refractive index is 2-2.5 after depositing antireflective film；Front antireflective film can effectively promote the absorption of solar energy
Rate promotes the transformation efficiency of solar battery.
(10) laser opening is carried out to silicon chip back side；
Wherein, using Supreme Being, your laser carries out aperture to backside passivation film, and aluminium silicon is made to form Ohmic contact, and percent opening control exists
3%-10%.
(11) back electrode slurry, aluminium paste are printed in silicon chip back side；Front print positive electrode slurry is simultaneously dried；
(12) silicon wafer for obtaining step (11) carries out high temperature firing, forms back electrode, aluminum back electric field and positive electrode, obtains
High efficiency SE-PERC solar battery finished product.
Wherein, firing temperature is 300-900 DEG C, preferably 300-600 DEG C.
It is further described combined with specific embodiments below:
Embodiment 1
In the present embodiment high efficiency SE-PERC solar battery the preparation method is as follows:
(1) making herbs into wool: the P-type wafer for selecting 800pcs is that base material is formed using wet etching technique in silicon chip surface
Flannelette, loss of weight control are 0.4g, reflectivity 11%；
(2) it spreads: using low pressure diffusion technique, form PN junction, the square resistance of silicon wafer is 100 Ω/sq after diffusion；
(3) it removes back side PSG: removing back side PSG layers using the HF solution that concentration is 3%；
(4) polished backside: the KOH/ additive solution progress polished backside for the use of concentration being 10%, loss of weight 0.3g, instead
Rate control is penetrated 40%；
(5) front laser: using Supreme Being, your laser carries out positive doping, and the decline control of silicon wafer sheet resistance is 30 Ω/sq；
(6) it removes positive PSG: removing back side PSG layers using the HF solution that concentration is 3%；
(7) it anneals: being made annealing treatment using hot oxygen, temperature is controlled at 500 DEG C；
(8) backside deposition Al2O3/SiNxFilm, passivating film with a thickness of 110nm；
(9) front deposition SiNxFilm, the thickness control of antireflective film is in 65nm, refractive index 2；
(10) backside laser: using Supreme Being, your laser carries out aperture to backside passivation film: percent opening control is 3%；
(11) slurry prints: by silk-screen printing technique, printing back electrode slurry, aluminium paste in silicon chip back side；Front printing
Positive electrode slurry is simultaneously dried；
(12) it is burnt into: being fired into SE-PERC finished battery at 500 DEG C.
Embodiment 2
(1) making herbs into wool: the P-type wafer for selecting 800pcs is that base material is formed using wet etching technique in silicon chip surface
Flannelette, loss of weight control are 0./g, reflectivity 15%；
(2) it spreads: using low pressure diffusion technique, form PN junction, the square resistance of silicon wafer is 145 Ω/sq after diffusion；
(3) it removes back side PSG: removing back side PSG layers using the HF solution that concentration is 5%；
(4) polished backside: the KOH/ additive solution progress polished backside for the use of concentration being 15%, loss of weight 0.45g, instead
Rate control is penetrated 50%；
(5) front laser: using Supreme Being, your laser carries out positive doping, and the decline control of silicon wafer sheet resistance is 45 Ω/sq；
(6) it removes positive PSG: removing back side PSG layers using the HF solution that concentration is 5%；
(7) it anneals: being made annealing treatment using hot oxygen, temperature is controlled at 550 DEG C；
(8) backside deposition Al2O3/SiNxFilm, passivating film with a thickness of 145nm；
(9) front deposition SiNxFilm, the thickness control of antireflective film is in 80nm, refractive index 2.5；
(10) backside laser: using Supreme Being, your laser carries out aperture to backside passivation film: percent opening control is 8.5%；
(11) slurry prints: by silk-screen printing technique, printing back electrode slurry, aluminium paste in silicon chip back side；Front printing
Positive electrode slurry is simultaneously dried；
(12) it is burnt into: being fired into SE-PERC finished battery at 800 DEG C.
Embodiment 3
(1) making herbs into wool: the P-type wafer for selecting 800pcs is that base material is formed using wet etching technique in silicon chip surface
Flannelette, loss of weight control are 0.5g, reflectivity 14.5%；
(2) it spreads: using low pressure diffusion technique, form PN junction, the square resistance of silicon wafer is 125 Ω/sq after diffusion；
(3) it removes back side PSG: removing back side PSG layers using the HF solution that concentration is 5%；
(4) polished backside: the KOH/ additive solution progress polished backside for the use of concentration being 15%, loss of weight 0.4g, instead
Rate control is penetrated 52.5%；
(5) front laser: using Supreme Being, your laser carries out positive doping, and the decline control of silicon wafer sheet resistance is 45 Ω/sq；
(6) it removes positive PSG: removing back side PSG layers using the HF solution that concentration is 5%；
(7) it anneals: being made annealing treatment using hot oxygen, temperature is controlled at 550 DEG C；
(8) backside deposition Al2O3/SiNxFilm, passivating film with a thickness of 135nm；
(9) front deposition SiNxFilm, the thickness control of antireflective film is in 80nm, refractive index 2.5；
(10) backside laser: using Supreme Being, your laser carries out aperture to backside passivation film, and percent opening control is 6.5%；
(11) slurry prints: by silk-screen printing technique, printing back electrode slurry, aluminium paste in silicon chip back side；Front printing
Positive electrode slurry is simultaneously dried；
(12) it is burnt into: being fired into SE-PERC finished battery at 650 DEG C.
SE-PERC solar battery in embodiment 1-3 is subjected to performance measurement, result such as table 1.
Table 1
| Back reflection rate (%) | Emitter sheet resistance (Ω/sq) after etching | Efficiency (%) | |
| Embodiment 1 | 38% | 68 | 21.18% |
| Embodiment 2 | 48% | 85 | 21.85% |
| Embodiment 3 | 50% | 76 | 21.96% |
SE-PERC solar battery efficiency it can be seen from table in the present invention is 21% or more.Compared to traditional SE-
PERC solar battery, efficiency, which has, to be obviously improved.
Comparative example 1
Acid etching processes produce SE-PERC solar battery
Acid etching processes are divided into 11 steps, and wherein step (1), step (2) are identical as the embodiment of the present invention 3；Step (3)
It is identical as 3 step (5) of the embodiment of the present invention；Step (4) is to use HF/HNO3Solution (ratio 1:2) carries out acid system to silicon wafer
Etching polishes and goes PSG, and etching loss of weight control is 0.35g, and reflectivity is controlled in 20%-30%；Step (5)-step (11) with
3 step of the embodiment of the present invention (6)-step (12) is identical.
Comparative example 2
Alkaline etching method produces SE-PERC solar battery
12 steps are divided into, wherein step (1), step (2) are identical as the embodiment of the present invention 3；Step (3) and the present invention
3 step of embodiment (5) is identical；Step (4), step (5) respectively with the step (3) and step (4) phase in the embodiment of the present invention 3
Together；Step (6)-step (11) is identical as 3 step of the embodiment of the present invention (6)-step (12).
Production example 3, comparative example 1,500, solar battery in comparative example 2 respectively, test its performance,
Test result is as shown in table 2.From table 2 it can be seen that preparation method of the invention compares traditional preparation method, can effectively mention
The efficiency of solar battery is risen, gain can reach 0.8-1%.
Table 2
The foregoing is merely preferred embodiments of the invention, are not intended to limit the invention, all in spirit of the invention
With any modification affected within principle, equivalent replacement and improvement etc. be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of high efficiency SE-PERC solar battery, which is characterized in that successively include:
(1) in the two-sided formation flannelette of silicon wafer；
(2) phosphorus diffusion is carried out in silicon chip surface；
(3) phosphorosilicate glass of silicon chip back side is removed；
(4) it is polished using lye silicon chip back side；
(5) laser heavy doping is carried out to front side of silicon wafer；
(6) phosphorosilicate glass of the front side of silicon wafer removed；
(7) silicon wafer is made annealing treatment；
(8) passivating film is deposited in silicon chip back side；
(9) antireflective film is deposited in front side of silicon wafer；
(10) laser opening is carried out to silicon chip back side；
(11) back electrode slurry, aluminium paste are printed in silicon chip back side；Front print positive electrode slurry is simultaneously dried；
(12) silicon wafer for obtaining step (11) carries out high temperature firing, forms back electrode, aluminum back electric field and positive electrode, obtains high efficiency
SE-PERC solar battery finished product.
2. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (2)
In, silicon wafer sheet resistance is 90-150 Ω/sq after phosphorus diffusion；In step (5), silicon wafer heavily doped region sheet resistance and undoped region sheet resistance
Difference is 25-45 Ω/sq.
3. the preparation method of high efficiency SE-PERC solar battery as claimed in claim 2, which is characterized in that step (6)
In, front side of silicon wafer laser heavily doped region sheet resistance is 60-80 Ω/sq.
4. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (4)
In, silicon wafer loss of weight is 0.3-0.5g；Silicon chip back side reflectivity is 30-55% after polishing.
5. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (3) with
In step (6), phosphorosilicate glass is removed using HF solution, HF concentration of polymer solution is 3-10%.
6. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (8)
In, passivating film Al2O3/SiNxFilm；It is with a thickness of 110-150nm.
7. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (9)
In, antireflective film is silicon nitride film；It is with a thickness of 65-80nm；Front side of silicon wafer refractive index is 2-2.5 after depositing antireflective film.
8. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (10)
In, percent opening 3-10%.
9. the preparation method of high efficiency SE-PERC solar battery as described in claim 1, which is characterized in that step (11)
In, sintering temperature is 300-900 DEG C.
10. a kind of efficient SE-PERC solar battery, which is characterized in that it is used such as the described in any item systems of claim 1-9
Preparation Method is prepared.
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Address after: 322009 No. 655 Haopai Road, Suxi Town, Yiwu City, Zhejiang Province Applicant after: Zhejiang love Solar Energy Technology Co., Ltd. Applicant after: Guangdong Asahi Polytron Technologies Inc Address before: 322009 No. 126 Sufu Road, Suxi Town, Yiwu City, Jinhua City, Zhejiang Province Applicant before: Zhejiang love Solar Energy Technology Co., Ltd. Applicant before: Guangdong Asahi Polytron Technologies Inc |
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Application publication date: 20190308 |
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