CN110010721A - SE-based alkali polishing high-efficiency PERC battery process - Google Patents
SE-based alkali polishing high-efficiency PERC battery process Download PDFInfo
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- CN110010721A CN110010721A CN201910221252.XA CN201910221252A CN110010721A CN 110010721 A CN110010721 A CN 110010721A CN 201910221252 A CN201910221252 A CN 201910221252A CN 110010721 A CN110010721 A CN 110010721A
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- 239000003513 alkali Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 28
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 18
- 238000005498 polishing Methods 0.000 title claims abstract description 16
- 230000008569 process Effects 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000654 additive Substances 0.000 claims abstract description 26
- 230000000996 additive effect Effects 0.000 claims abstract description 26
- 239000012530 fluid Substances 0.000 claims abstract description 22
- 238000001802 infusion Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000005457 optimization Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 8
- 230000001502 supplementing effect Effects 0.000 abstract 6
- 239000003814 drug Substances 0.000 abstract 1
- 239000013589 supplement Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 238000009472 formulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an alkaline polishing high-efficiency PERC battery process based on SE, which comprises the following steps of: performing alkali polishing on the silicon wafer by adopting the optimized alkali polishing formula; and (3) adding an additive and an alkali solution supplement used for alkali polishing according to a step mode: in batches 1 to 15, the additive fluid infusion amount is 200 to 350ml, the alkali fluid infusion amount is 300 to 1000ml, and the pure water fluid infusion amount is 7 to 9L; in 16 th to 30 th batches, the additive liquid supplementing amount is 250 ml to 400ml, the alkali liquid supplementing amount is 850 ml to 1150ml, and the pure water liquid supplementing amount is 8L to 10L; in 31 st to 60 th batches, the additive liquid supplementing amount is 300 to 500ml, the alkali liquid supplementing amount is 1000 to 1300ml, and the pure water liquid supplementing amount is 9 to 11L. The invention adopts the optimized alkali polishing formula, and adopts a stepped replenishment mode as the replenishment mode of the additive and the alkali replenishment solution, thereby effectively prolonging the service life of the liquid medicine in the alkali polishing tank, achieving the yield improvement, greatly reducing the consumption of the additive and the alkali, and breaking through the capacity bottleneck of the alkali polishing SE.
Description
Technical field
The present invention relates to photovoltaic solar cell technical field, specially a kind of alkali based on SE polishes efficient PERC battery
Technique.
Background technique
PERC battery technology has apparent performance and cost advantage, has pushed the application of p-type solar level monocrystalline silicon piece.
High efficiency, low cost, environmental protection simultaneously is the main flow direction that crystal silicon solar batteries develop.PERC battery is mainly overleaf formed
Passivating film, this requires back surfaces to have good planarization, and alkali casts standby main research and just concentrates on throwing the back side
Light processing not only solves the problems, such as the planarization of back side coating film in this way, and can remove back side n type diffused layer, promotes P+ layers
Formation, improve minority carrier life time, increase back surface reflectivity.Therefore it introduces polishing process and is integrated into the existing production work of PERC battery
It is a kind of effective means for further increasing PERC battery efficiency in skill.
Alkali throws battery with its simple apparatus and process, unique process flow and efficient battery efficiency, by photovoltaic
The concern in market.Laser doping (SE) has controllability strong, simple process, and the Laser Induced Damage caused by material is small etc. excellent
Point is to prepare the ideal choice of technology of high efficiency crystalline silicon solar cell.It can have selective melting using laser doping technique
The characteristics of with diffusion, selective emitting electrode structure is prepared in silica-based solar cell.In this configuration, it is carried out in light absorption area
It is lightly doped, sub- auger recombination is lacked on reduction surface in this way, and shortwave spectral response is good；Heavy doping is carried out in metal contact zone, so that golden
Belong to and forms good Ohmic contact between electrode and battery emitter region, short circuit current, open-circuit voltage, fill factor and conversion effect
Rate is all higher.
Technology and SE technology are thrown for alkali, it can be deduced that PERC battery technology still has more bright in the prior art
Aobvious defect: existing alkali throws the formula and usage mode of additive and alkali fluid infusion, and original formulation is to be added using 1-30 batch together
300ml is added in the additive of equivalent and alkali fluid infusion, additive every batch of, and 1050ml is added in alkali amount infused, and pure water amount infused is
9L, the above-mentioned existing fluid infusion mode can not extend the medical fluid service life that alkali throws slot well, so that production capacity can not be promoted, and
The consumption of additive and alkali can not carry out production capacity saving, also can not just break through the production capacity bottleneck that alkali throws SE.
Summary of the invention
The purpose of the present invention is to provide a kind of, and the alkali based on SE polishes efficient PERC battery process, to solve above-mentioned background
The problem of being proposed in technology.
To achieve the above object, the invention provides the following technical scheme:
A kind of efficient PERC battery process of alkali polishing based on SE, comprising the following steps:
Step S01, making herbs into wool: monocrystalline silicon piece obtains good suede structure by surface wool manufacturing；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion；
Step S03, SE technique: selective emitter has on the silicon substrate being lightly doped by the laser beam of micron-scale
Selectively carry out the heavy doping of foreign atom；
Step S04, hot oxygen: increasing high temperature thermal oxidation technique after SE technique, produces one layer of titanium dioxide of deposition in silicon chip surface
Silicon protective layer；
Step S05, it removes PSG: edge PN junction being etched through past PSG and is removed；
Step S06, alkali polishes: throwing formula using the alkali after optimization, carries out alkali polishing to silicon wafer；
Step S07, it anneals: annealing to the silicon wafer after alkali polishing, produce deposition silica coating in silicon chip surface；
Step S08, aluminum oxide passivation film back passivation: is deposited by ALD or PECVD mode at silicon wafer back；
Step S09, notacoria: silicon nitride film is grown at the back side of silicon wafer；
Step S10, positive film: in the front growth silicon nitride film of silicon wafer；
Step S11, laser slotting laser slotting: is carried out to the silicon chip back side after plated film；
Step S12, printing-sintering: the back side and front printing are completed by silk-screen printing, is then sintered technique；
Step S13, electrical pumping: pass through light decay furnace or electrical pumping furnace；
Step S14, it tests sorting: battery testing stepping finally being carried out to cell piece；
In step S06, alkali polishes used additive and alkali fluid infusion is added according to staged:
1-15 batch, additive amount infused are 200-350ml, and alkali amount infused is 300-1000ml, and pure water amount infused is
7-9L；
16-30 batch, additive amount infused are 250-400ml, and alkali amount infused is 850-1150ml, and pure water amount infused is
8-10L；
31-60 batch, additive amount infused are 300-500ml, and alkali amount infused is 1000-1300ml, pure water amount infused
For 9-11L.
Preferably, the reagent of nation BP -170 is opened up in the additive selection, and potassium hydroxide solution is selected in the alkali fluid infusion.
Compared with prior art, the beneficial effects of the present invention are:
The present invention is thrown using the alkali after optimization and is formulated, and the additional way of additive and alkali fluid infusion uses ladder additional way,
The medical fluid service life for effectively extending alkali throwing slot has reached production capacity promotion, while the consumption sharp fall of additive and alkali, dashes forward
Broken alkali throws the production capacity bottleneck of SE.
Detailed description of the invention
Fig. 1 is the conventional process flow figure of the prior art；
Fig. 2 is preparation method process flow chart of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The present invention provides a kind of technical solution referring to FIG. 1-2:
A kind of efficient PERC battery process of alkali polishing based on SE, comprising the following steps:
Step S01, making herbs into wool: monocrystalline silicon piece obtains good suede structure by surface wool manufacturing, to realize that table is compared in increase
Area can receive more multi-photon (energy), while reduce the reflection of incident light, residual liquid when cleaning and texturing, reduce acid
Influence with alkaline matter to battery knot.
Step S02, it spreads: being reacted by phosphorus oxychloride and silicon wafer, obtain phosphorus atoms, by certain time, phosphorus is former
Son enters the superficial layer of silicon wafer, and is spread by the gap between silicon atom to silicon wafer internal penetration, forms N-type semiconductor
With the interface of P-type semiconductor, diffusion process is completed, realizes the conversion of luminous energy to electric energy.
Step S03, SE technique: (selective emitter) selective emitter is exactly to pass through on the silicon substrate being lightly doped
The laser beam of micron-scale selectively carries out the heavily doped region of foreign atom, effectively forms low surface concentration shallow junction work
Skill, while also can guarantee the Ohmic contact of printing grid region.
Step S04, hot oxygen: alkali throws the destruction to the region SE flannelette in order to prevent, increases hot oxygen process after SE, the temperature of hot oxygen
Degree is 500 ° -800 DEG C, and the region SE microscopically observation pattern is good, is not destroyed, and PERC+SE efficiency is up to 22% or more,
And silicon dioxide layer of protection is formed on heavily doped region.
Step S05, PSG is removed: since diffusion forms short-channel in silicon chip edge, collected by the front of PN junction
The light induced electron back side that can there is the region of phosphorus to flow to PN junction along edge-diffusion, and cause short circuit.Through past PSG by edge PN
Knot etching removal, avoids edge from causing short circuit.Slot is thrown by alkali again, removes the phosphorosilicate glass of silicon chip surface, reduces phosphorosilicate glass
Influence to efficiency.
Step S06, alkali polishes: PERC battery cardinal principle is that the back side prepares aluminum oxide passivation film 5, this will
Ask back surface that there is good planarization, current research, which is concentrated mainly on, is processed by shot blasting the back side, not only solves in this way
The planarization problem of back side coating film, and can remove back side n type diffused layer, promotes P+ layer of formation, raising minority carrier life time,
Increase back surface reflectivity.
Therefore introducing KOH alkali polishing process and being integrated into the existing production technology of PERC battery is to further increase PERC battery
A kind of effective means of efficiency, alkali polishes used additive and alkali fluid infusion is added according to staged, wherein adding
The reagent of nation BP -170 is opened up in agent selection, and potassium hydroxide solution is selected in alkali fluid infusion:
1-15 batch, additive amount infused are 200ml, and alkali amount infused is 300ml, and pure water amount infused is 7L；
16-30 batch, additive amount infused are 250ml, and alkali amount infused is 850ml, and pure water amount infused is 8L；
31-60 batch, additive amount infused are 300ml, and alkali amount infused is 1000ml, and pure water amount infused is 9L.
Step S07, anneal: the silicon wafer after alkali polishing passes through oxygen high temperature furnace pair then in the case where 700 ° of annealing temperature
Cell piece surface production layer of silicon dioxide layer.
Step S08, back passivation: and then pass through one layer of aluminum oxide passivation film of ALD PECVD mode lamination.
Step S09, notacoria: one layer of silicon nitride film of lamination below aluminum oxide passivation film, back silicon nitride film rise
Protect the effect of aluminum oxide passivation film.
Step S10, positive film: the silicon nitride film of front face surface is to reduce reflection and passivation.
Step S11, laser slotting: the silicon chip back side laser slotting after plated film.
Step S12, printing-sintering: the back side and front printing are completed by silk-screen printing, then sintering process.
Step S13, electrical pumping: by light decay furnace or electrical pumping furnace, battery pond photo attenuation is reduced.
Step S14, test sorting: last battery tests stepping.
Comparative experiments:
Contrast groups: alkali throwing is carried out to the silicon wafer on production line using the medical fluid of original formulation in background technique；
Experimental group: alkali throwing is carried out to the silicon wafer on production line using optimization of C/C composites medical fluid of the invention；
The fluid infusion mode of contrast groups and experimental group is as shown in table 1 below:
Table 1
According to the data in table 1, in such a way that optimization of C/C composites of the invention carries out ladder fluid infusion, compare original formulation
Fluid infusion mode, to the production capacity for having the beneficial effect that entire medical fluid period that alkali is thrown of the silicon wafers of the different batches on production line by
10800 are promoted to 22000, and the medical fluid period is promoted to 60 batches by 30 batches, and the unit consumption of additive is by 18.5 liters/ten thousand
Piece is down to 12.6 liters/ten thousand.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (2)
1. a kind of alkali based on SE polishes efficient PERC battery process, comprising the following steps:
Step S01, making herbs into wool: monocrystalline silicon piece obtains good suede structure by surface wool manufacturing；
Step S02, it spreads: being passed through phosphorus oxychloride and silicon wafer is reacted, realize diffusion；
Step S03, SE technique: selective emitter has selection on the silicon substrate being lightly doped, through the laser beam of micron-scale
Carry out to property the heavy doping of foreign atom；
Step S04, hot oxygen: increasing high temperature thermal oxidation technique after SE technique, produces deposition layer of silicon dioxide in silicon chip surface and protects
Sheath；
Step S05, it removes PSG: edge PN junction being etched through past PSG and is removed；
Step S06, alkali polishes: throwing formula using the alkali after optimization, carries out alkali polishing to silicon wafer；
Step S07, it anneals: annealing to the silicon wafer after alkali polishing, produce deposition silica coating in silicon chip surface；
Step S08, aluminum oxide passivation film back passivation: is deposited by ALD or PECVD mode at silicon wafer back；
Step S09, notacoria: silicon nitride film is grown at the back side of silicon wafer；
Step S10, positive film: in the front growth silicon nitride film of silicon wafer；
Step S11, laser slotting laser slotting: is carried out to the silicon chip back side after plated film；
Step S12, printing-sintering: the back side and front printing are completed by silk-screen printing, is then sintered technique；
Step S13, electrical pumping: pass through light decay furnace or electrical pumping furnace；
Step S14, it tests sorting: battery testing stepping finally being carried out to cell piece；
It is characterized by:
In step S06, alkali polishes used additive and alkali fluid infusion is added according to staged:
1-15 batch, additive amount infused are 200-350ml, and alkali amount infused is 300-1000ml, and pure water amount infused is 7-9L；
16-30 batch, additive amount infused are 250-400ml, and alkali amount infused is 850-1150ml, and pure water amount infused is 8-
10L；
31-60 batch, additive amount infused are 300-500ml, and alkali amount infused is 1000-1300ml, and pure water amount infused is 9-
11L。
2. a kind of alkali based on SE according to claim 1 polishes efficient PERC battery process, it is characterised in that: described to add
Agent selection is added to open up the reagent of nation BP -170, potassium hydroxide solution is selected in the alkali fluid infusion.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110176522A (en) * | 2019-06-13 | 2019-08-27 | 常州时创能源科技有限公司 | A kind of alkaline etching technique of SE solar battery |
| CN110176521A (en) * | 2019-06-13 | 2019-08-27 | 常州时创能源科技有限公司 | The alkaline etching method of SE solar battery |
| CN110416368A (en) * | 2019-08-21 | 2019-11-05 | 常州时创能源科技有限公司 | A kind of production line of laser SE battery |
| CN110459646A (en) * | 2019-08-07 | 2019-11-15 | 山西潞安太阳能科技有限责任公司 | A kind of novel process for throwing laser selective emitter suitable for alkali |
| CN110752271A (en) * | 2019-09-26 | 2020-02-04 | 无锡琨圣科技有限公司 | Processing method of PERC battery |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN111403552A (en) * | 2020-03-24 | 2020-07-10 | 浙江爱旭太阳能科技有限公司 | Multi-light-source composite passivation method for reducing crystalline silicon solar cell attenuation |
| CN111584687A (en) * | 2020-06-09 | 2020-08-25 | 山西潞安太阳能科技有限责任公司 | Novel method for realizing LDSE (laser direct ion exchanger) by alkali throwing |
| CN114032035A (en) * | 2021-10-28 | 2022-02-11 | 常州时创能源股份有限公司 | Additive for alkali polishing of silicon wafer and application thereof |
| CN115132876A (en) * | 2021-03-22 | 2022-09-30 | 黄河水电西宁太阳能电力有限公司 | Efficient PERC battery preparation process based on SE back alkali polishing |
| CN115494887A (en) * | 2022-11-16 | 2022-12-20 | 合肥新晶集成电路有限公司 | Etching liquid replenishing method and device and etching equipment |
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