CN110922970A - PERC battery back polishing additive and technology - Google Patents
PERC battery back polishing additive and technology Download PDFInfo
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- CN110922970A CN110922970A CN201911197379.9A CN201911197379A CN110922970A CN 110922970 A CN110922970 A CN 110922970A CN 201911197379 A CN201911197379 A CN 201911197379A CN 110922970 A CN110922970 A CN 110922970A
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- 238000005498 polishing Methods 0.000 title claims abstract description 39
- 239000000654 additive Substances 0.000 title claims abstract description 17
- 230000000996 additive effect Effects 0.000 title claims abstract description 16
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 13
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 13
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 13
- 238000005516 engineering process Methods 0.000 title description 7
- 239000000243 solution Substances 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000003513 alkali Substances 0.000 claims abstract description 30
- 238000005406 washing Methods 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 9
- 239000012670 alkaline solution Substances 0.000 claims abstract description 7
- 238000007517 polishing process Methods 0.000 claims abstract description 7
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000004094 surface-active agent Substances 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 230000018044 dehydration Effects 0.000 claims abstract description 4
- 238000006297 dehydration reaction Methods 0.000 claims abstract description 4
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- VFTFKUDGYRBSAL-UHFFFAOYSA-N 15-crown-5 Chemical compound C1COCCOCCOCCOCCO1 VFTFKUDGYRBSAL-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PERC battery back polishing additive which comprises the following components in percentage by mass: 0.2 to 2.5 percent of surfactant, 1.0 to 5.0 percent of oxidant and the balance of deionized water. The invention also discloses a PERC battery back polishing process: the chain machine for removing the back surface and the four sides of the PSG comprises the following steps: covering the upper surface of the silicon wafer with a water film → removing PSG from HF solution → washing → drying → spraying ozone → discharging; the groove-type alkali back polishing comprises the following steps: feeding → pre-cleaning → water washing → alkali polishing → water washing → post alkali washing → water washing → acid washing → water washing → slow pulling dehydration → drying → feeding; wherein, the alkaline solution used for the alkaline polishing is added with a back polishing additive. The PSG on the back surface and four sides of the silicon wafer treated by the process method is completely removed, the reflectivity of the polished back surface reaches more than 45%, PN junctions on the front surface of the silicon wafer are intact and are not influenced by corrosion, the silicon wafer is not influenced by an area including an SE laser, and the process is compatible with an SE process.
Description
Technical Field
The invention belongs to the field of a PERC battery back polishing process, and particularly relates to a PERC battery back polishing additive and a PERC battery back polishing process.
Background
In the solar cell preparation industry, the single crystal PERC cell technology is a high-efficiency solar cell technology which is popular in the market at present, and the core of the technology is that the back of a silicon wafer is covered by aluminum oxide and silicon nitride to play the roles of passivating the surface and improving long-wave response, so that the conversion efficiency of the cell is improved.
In the preparation process of the PERC battery technology of the solar battery piece, the performance of the solar battery piece can be effectively improved by polishing the back surface of the silicon wafer. And a relatively flat back surface is manufactured, and the passivation effect is enhanced, so that the conversion efficiency of the solar cell is improved.
However, in the prior art, the PN junction on the front surface of the silicon wafer is easy to break, the polishing effect on the back surface of the silicon wafer is not easy to guarantee, and the silicon wafer needs to be compatible with the SE process of the PERC cell.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the PN junction on the front surface of the silicon wafer is protected from being damaged, the back polishing effect is improved, and HF/HNO is reduced3The cost is reduced and the pollution to the environment is reduced.
In order to solve the technical problems, the inventor obtains the technical scheme of the invention through practice and summary, and the invention discloses a PERC battery back polishing additive, which comprises the following components in percentage by mass: 0.2 to 2.5 percent of surfactant, 1.0 to 5.0 percent of oxidant and the balance of deionized water.
The invention also discloses a PERC battery back polishing process:
the chain machine for removing the back surface and the four sides of the PSG comprises the following steps: covering the upper surface of the silicon wafer with a water film → removing PSG from HF solution → washing → drying → spraying ozone → discharging;
the groove-type alkali back polishing comprises the following steps: feeding → pre-cleaning → water washing → alkali polishing → water washing → post alkali washing → water washing → acid washing → water washing → slow pulling dehydration → drying → feeding; wherein, the alkaline solution used for the alkaline polishing is added with a back polishing additive.
The ozone is sprayed, and the concentration of the ozone is controlled to be 200 ppm-600 ppm.
The alkali solution is KOH solution or NaOH solution.
The mass percentage of KOH in the KOH solution is 1.0 percent to 3.0 percent; the mass percentage of NaOH in the NaOH solution is 1.0-3.0%.
The mass ratio of the back polishing additive to the alkali solution is 0.5-3.0: 100.
immersing the silicon chip into alkali solution for 100-300 s, wherein the temperature of the alkali solution is 60-80 ℃.
Compared with the prior art, the invention can obtain the following technical effects:
1. in the step of removing PSG by the chain machine, ozone spraying is added after drying, so that an oxide layer is formed on the diffusion surface of the silicon wafer, PN junctions are prevented from being damaged, and compatible SE (selective emitter) process can be realized.
2. The alkaline solution used for the alkaline polishing of the invention is added with the back polishing additive, thereby preventing PN junctions from being damaged, simultaneously obtaining good back polishing effect and bringing about 0.1-0.15% of efficiency gain.
3. The invention can effectively reduce HF/HNO by using the alkali polishing technology3The cost is reduced and the pollution to the environment is reduced.
4. The PSG on the back surface and four sides of the silicon wafer treated by the process method is completely removed, the reflectivity of the polished back surface reaches more than 45%, PN junctions on the front surface of the silicon wafer are intact, the silicon wafer is not influenced by corrosion, and the silicon wafer including the area after SE laser is not influenced.
Drawings
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is an SEM photograph of a polished surface of a silicon wafer produced in an example of the present invention.
FIG. 2 is a reflection spectrum of a polished surface of a silicon wafer obtained in an example of the present invention.
Figure 3 is a table comparing back-polish additives versus efficiency advantage.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The application of the principles of the present invention will be further described with reference to the accompanying drawings and specific embodiments.
Examples
A PERC battery back polishing process comprises the steps of using a chain PSG removing device and a groove type alkali polishing device.
The chain machine for removing the back surface and the four sides of the PSG comprises the following steps: covering the upper surface of the silicon wafer with a water film → removing PSG from HF solution → washing → drying → spraying ozone → discharging;
the groove-type alkali back polishing comprises the following steps: feeding → pre-cleaning → water washing → alkali polishing → water washing → post alkali washing → water washing → acid washing → water washing → slow pulling dehydration → drying → feeding; wherein, the alkaline solution used for the alkaline polishing is added with a back polishing additive.
The back polishing additive comprises the following components in percentage by mass: 0.2 to 2.5 percent of surfactant, 1.0 to 5.0 percent of oxidant and the balance of deionized water.
The ozone is sprayed, and the concentration of the ozone is controlled to be 200 ppm-600 ppm.
The alkali solution is KOH solution or NaOH solution.
The mass percentage of KOH in the KOH solution is 1.0 percent to 3.0 percent; the mass percentage of NaOH in the NaOH solution is 1.0-3.0%.
The mass ratio of the back polishing additive to the alkali solution is 0.5-3.0: 100.
immersing the silicon chip into alkali solution for 100-300 s, wherein the temperature of the alkali solution is 60-80 ℃.
In the examples:
the surfactant is 2.0% of tartaric acid and 0.5% of 15-crown-5;
the oxidant is 1.0% of sodium persulfate;
the mass ratio of the back polishing additive to the alkali solution is 1.5: 100;
the alkali solution is 2.0 percent KOH solution or 2.0 percent NaOH solution;
the silicon wafer is immersed in the alkaline solution for 220s, and the temperature of the alkaline solution is 72 ℃.
In some embodiments:
the oxidant is 5.0 percent of sodium persulfate;
the silicon chip is immersed in the alkali solution for 100s or 300s, and the temperature of the alkali solution is 6080 ℃ or 80 ℃.
As shown in fig. 1-3: FIG. 1 is an SEM photograph of a polished surface of a silicon wafer produced in an example of the present invention; FIG. 2 is a reflectance spectrum of a polished surface of a silicon wafer produced in an example of the present invention; after the silicon wafer is processed by the process, PSG on the back surface and four sides of the silicon wafer is completely removed, the reflectivity of the polished back surface reaches more than 45%, PN junctions on the front surface of the silicon wafer are intact, the silicon wafer is not influenced by corrosion, and areas including areas after SE laser are not influenced.
Wherein figure 3 is a back-polish additive-efficiency advantage comparison table: test is experimental Test data and Baseline is benchmark comparative data.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (7)
1. A PERC cell back polishing additive, characterized by: the weight percentage of each component is as follows:
0.2 to 2.5 percent of surfactant,
1.0 to 5.0 percent of oxidant,
the balance being deionized water.
2. A PERC battery back polishing process is characterized in that:
the chain machine for removing the back surface and the four sides of the PSG comprises the following steps: covering the upper surface of the silicon wafer with a water film → removing PSG from HF solution → washing → drying → spraying ozone → discharging;
the groove-type alkali back polishing comprises the following steps: feeding → pre-cleaning → water washing → alkali polishing → water washing → post alkali washing → water washing → acid washing → water washing → slow pulling dehydration → drying → feeding; wherein, the alkaline solution used for the alkaline polishing is added with a back polishing additive.
3. The process of claim 2, wherein said polishing step comprises: the ozone is sprayed, and the concentration of the ozone is controlled to be 200 ppm-600 ppm.
4. The process of claim 2, wherein said polishing step comprises: the alkali solution is KOH solution or NaOH solution.
5. The PERC cell back-polishing process of claim 4, wherein: the mass percentage of KOH in the KOH solution is 1.0 percent to 3.0 percent; the mass percentage of NaOH in the NaOH solution is 1.0-3.0%.
6. The process of claim 2, wherein said polishing step comprises: the mass ratio of the back polishing additive to the alkali solution is 0.5-3.0: 100.
7. the process of claim 2, wherein said polishing step comprises: immersing the silicon chip into alkali solution for 100-300 s, wherein the temperature of the alkali solution is 60-80 ℃.
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Cited By (8)
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| CN111560249A (en) * | 2020-05-26 | 2020-08-21 | 翟伟俊 | Preparation method of PERC battery alkali polishing additive |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
| CN113122148A (en) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | Crystalline silicon alkali polishing additive and use method thereof |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN114005907A (en) * | 2021-11-11 | 2022-02-01 | 上饶捷泰新能源科技有限公司 | Manufacturing method of Topcon battery |
| CN114350265A (en) * | 2021-11-30 | 2022-04-15 | 嘉兴市小辰光伏科技有限公司 | Monocrystalline silicon alkali polishing additive and use method thereof |
| CN115820132A (en) * | 2022-11-23 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Chain type alkali polishing process additive and application thereof |
| CN115975512A (en) * | 2022-12-12 | 2023-04-18 | 嘉兴市小辰光伏科技有限公司 | High-reflectivity crystalline silica-base polishing additive and use method thereof |
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