CN104900759A - Basic etching back-polishing process for crystalline silicon battery - Google Patents
Basic etching back-polishing process for crystalline silicon battery Download PDFInfo
- Publication number
- CN104900759A CN104900759A CN201510275663.9A CN201510275663A CN104900759A CN 104900759 A CN104900759 A CN 104900759A CN 201510275663 A CN201510275663 A CN 201510275663A CN 104900759 A CN104900759 A CN 104900759A
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- China
- Prior art keywords
- silicon chip
- front side
- silicon
- etching back
- psg layer
- Prior art date
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- Pending
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- 238000005530 etching Methods 0.000 title claims abstract description 22
- 238000007517 polishing process Methods 0.000 title abstract 4
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 239000003513 alkali Substances 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 15
- 239000002585 base Substances 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000007654 immersion Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005406 washing Methods 0.000 abstract 3
- 238000007664 blowing Methods 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 9
- 241000084978 Rena Species 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a basic etching back-polishing process for crystalline silicon batteries. The basic etching back-polishing process includes spraying water on the front side of a silicon chip to protect the front side PSG layer of the silicon chip, removing PSG layer on the back side of the silicon chip with HF solution, washing in a water tank, drying the surface the silicon chip through blowing, transmitting the silicon chip into an immersion type alkali groove to corrode the back side of the silicon chip with weak base, washing in a water tank, removing the PSG layer on the front side of the silicon chip with HF solution, washing in a water tank, and drying by blowing. The basic etching back-polishing process ensures efficiency and stability of batteries, no etching stamps may be formed to affect the appearance of the battery, and p-n junctions may not be damaged. Acid consumption may be lowered, the back polishing effect is excellent, and no acid corrosion is on the front side. Weak photoelectric effect is facilitated, the electric leakage proportion is low, and sheet resistance may not be increased.
Description
Technical field
The present invention relates to crystal silicon solar batteries field, is specifically that a kind of alkali formula etching back of the body of crystal silicon battery throws technique.
Background technology
Along with the release of crystal silicon battery solar energy profit margin, compete increasing, how to reduce costs and to improve yields one of important topic becoming each enterprise.Limit carving technology is one of most important joint of crystal silicon battery, in the market popular various limits carving method, but has its weak point.
Main flow etching technics:
1) rena formula: the method taking " Overwater-floating ", because the silicon chip surface PSG layer after diffusion is hydrophilic, causing nitration mixture acid when carving limit to climb to silicon chip surface, easily being formed " etching print ", affecting battery outward appearance.Shown in the visible technological process Fig. 1 of its technological process.
2) schmid formula: the protection front of taking " moisture film ", but due to silicon chip motion, the water capacity easily drops onto in etching groove, dilution acid solution; In addition, due to PSG protection, the acid of high concentration is needed to tie by Ke Tongbian.Final result is exactly that this kind of technique wastes acid solution in a large number; Technological process as shown in Figure 2.
3) Al Kut strangles formula: the PSG layer first being removed whole silicon chip surface by the mode of spray, then carves limit, and when this kind of technique can cause carving limit, p-n junction is exposed in acid mist, thus destroys p-n, causes sheet resistance to promote.Technological process as shown in Figure 3.
4) dry quarter: by Ions Bombardment, etched edge p-n junction, then remove PSG with HF.Cell parallel resistance generally 1 order of magnitude lower than wet etching that this kind of technique is made, is unfavorable for low light level effect, and electric leakage ratio is higher.
Summary of the invention
Technical problem to be solved by this invention is, overcome the shortcoming of above prior art: provide a kind of efficiency on battery and stability to have larger guarantee, not easily form " etching prints " and affect battery outward appearance, do not destroy p-n junction, save sour consumption, carry on the back and throw effective, that front anacidity burn into is conducive to low light level effect, electric leakage ratio crystal silicon battery that is low, that do not cause sheet resistance to promote alkali formula etching back of the body throwing technique.
Technical solution of the present invention is as follows: a kind of alkali formula etching back of the body of crystal silicon battery throws technique, comprises following concrete steps:
1) water is sprayed on front side of silicon wafer to protect front side of silicon wafer PSG layer;
2) HF solution is utilized to be removed by silicon chip back side PSG layer;
3) the remnants acid on tank cleaning silicon chip;
4) silicon chip surface is dried up;
5) silicon chip is conveyed in immersion type alkali groove and adopts weak base to carry out silicon chip back side corrosion;
6) however, residual base on tank cleaning silicon chip;
7) HF solution removal front side of silicon wafer PSG layer is adopted;
8) the remnants acid on tank cleaning silicon chip;
9) dry up.
The invention has the beneficial effects as follows: the present invention is not easily formed " etching print " and affect battery outward appearance, do not destroy p-n junction, save sour consumption, back of the body throwing is effective, front anacidity burn into is conducive to low light level effect, electric leakage ratio is low, do not cause sheet resistance to promote, the HF concentration requirement of going PSG to need, far below conventional etching process, saves sour consumption.Carving limit adopts alkali formula to soak limit at quarter, has saved a large amount of acid, and the back of the body can be caused to throw effect promoting efficiency; Omnidistance technique does not use metal ion in addition, has had larger guarantee to the efficiency of battery and stability.The appearance that surface is bad, without acid corrosion, is avoided in front.
Accompanying drawing explanation
Fig. 1 is rena formula etch process flow figure.
Fig. 2 is schmid formula etch process flow figure.
Fig. 3 is that Al Kut strangles formula etch process flow figure.
Fig. 4 is process chart of the present invention.
Fig. 5 is schematic diagram of the present invention.
Embodiment
With specific embodiment, the present invention is described in further details below, but the present invention is not only confined to following specific embodiment.
Embodiment
The alkali formula etching back of the body of crystal silicon battery throws a technique, comprises following concrete steps:
1) shower nozzle is utilized water to be sprayed on front side of silicon wafer to protect front side of silicon wafer PSG layer; Front side of silicon wafer is owing to there being the protection of PSG layer, and acid mist cannot directly etching P-N junction, and sheet resistance is stablized.
2) HF solution is utilized to be removed by silicon chip back side PSG layer by the mode of capillary roller band liquid; Owing to there being moisture film to protect, the PSG layer of front side of silicon wafer can not be removed;
3) the remaining HF solution in the sink on cleaning silicon chip; HF solution is prevented to be brought in alkali groove, the alkali in neutralization bases groove;
4) silicon chip surface dries up by the hot blast cutter being 50-70 DEG C by temperature; Anti-waterstop enters in alkali groove, dilution alkali groove concentration;
5) be conveyed into by silicon chip in immersion type alkali groove and adopt mass percent solubility to be 5-8%, temperature is that the weak base of 60-70 DEG C carries out silicon chip back side corrosion; Described weak base is ammonium hydroxide; Because weak base has deep-etching effect to naked silicon, relatively slow to the reaction of PSG layer, realization is carved while limit is thrown with the back of the body and also can effectively be prevented front side of silicon wafer P-N junction destroyed;
6) however, residual base in the sink on cleaning silicon chip;
7) employing mass percent solubility is the HF solution removal front side of silicon wafer PSG layer of 5-8%;
8) the remnants acid in the sink on cleaning silicon chip;
9) dry up.
Below be only that feature of the present invention implements example, scope is not constituted any limitation.The technical scheme that all employings exchange on an equal basis or equivalence is replaced and formed, all drops within rights protection scope of the present invention.
Claims (4)
1. the alkali formula etching back of the body of crystal silicon battery throws a technique, it is characterized in that: comprise following concrete steps:
1) water is sprayed on front side of silicon wafer to protect front side of silicon wafer PSG layer;
2) HF solution is utilized to be removed by silicon chip back side PSG layer;
3) the remnants acid on tank cleaning silicon chip;
4) silicon chip surface is dried up;
5) silicon chip is conveyed in immersion type alkali groove and adopts weak base to carry out silicon chip back side corrosion;
6) however, residual base on tank cleaning silicon chip;
7) HF solution removal front side of silicon wafer PSG layer is adopted;
8) the remnants acid on tank cleaning silicon chip;
9) dry up.
2. the alkali formula etching back of the body of crystal silicon battery according to claim 1 throws technique, and it is characterized in that: in step 5), the mass percent solubility of weak base is 5-8%, temperature is 60-70 DEG C.
3. the alkali formula etching back of the body of crystal silicon battery according to claim 1 throws technique, it is characterized in that: weak base described in step 5) is ammonium hydroxide.
4. the alkali formula etching back of the body of crystal silicon battery according to claim 1 throws technique, it is characterized in that: step
7) in, the mass percent solubility of HF solution is 5-8%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510275663.9A CN104900759A (en) | 2015-05-27 | 2015-05-27 | Basic etching back-polishing process for crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510275663.9A CN104900759A (en) | 2015-05-27 | 2015-05-27 | Basic etching back-polishing process for crystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104900759A true CN104900759A (en) | 2015-09-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510275663.9A Pending CN104900759A (en) | 2015-05-27 | 2015-05-27 | Basic etching back-polishing process for crystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104900759A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784161A (en) * | 2017-01-18 | 2017-05-31 | 常州捷佳创精密机械有限公司 | A kind of polishing lithographic method of PERC solar cells |
| CN107068807A (en) * | 2017-04-28 | 2017-08-18 | 江苏顺风光电科技有限公司 | A kind of PERC battery preparation methods that technique is thrown based on back side alkali |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN114883190A (en) * | 2022-03-30 | 2022-08-09 | 江苏亚电科技有限公司 | Method for removing PSG layer on single surface of silicon wafer |
-
2015
- 2015-05-27 CN CN201510275663.9A patent/CN104900759A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784161A (en) * | 2017-01-18 | 2017-05-31 | 常州捷佳创精密机械有限公司 | A kind of polishing lithographic method of PERC solar cells |
| CN107068807A (en) * | 2017-04-28 | 2017-08-18 | 江苏顺风光电科技有限公司 | A kind of PERC battery preparation methods that technique is thrown based on back side alkali |
| CN109119338A (en) * | 2018-08-06 | 2019-01-01 | 横店集团东磁股份有限公司 | A kind of highback polishing and efficient single crystal process |
| CN110534408A (en) * | 2019-07-30 | 2019-12-03 | 苏州昊建自动化系统有限公司 | A kind of crystal-silicon battery slice chain type alkali polishing production line and chain type alkali polishing method |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN113539813B (en) * | 2021-06-08 | 2023-01-31 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
| CN114883190A (en) * | 2022-03-30 | 2022-08-09 | 江苏亚电科技有限公司 | Method for removing PSG layer on single surface of silicon wafer |
| CN114883190B (en) * | 2022-03-30 | 2024-04-30 | 江苏亚电科技股份有限公司 | Method for removing PSG layer on single surface of silicon wafer |
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Application publication date: 20150909 |
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| RJ01 | Rejection of invention patent application after publication |