CN103614778A - Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell - Google Patents
Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell Download PDFInfo
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Abstract
The invention discloses an alcohol-free alkaline texturing solution for a mono-crystalline silicon wafer, a texturing method for the mono-crystalline silicon wafer, a solar cell and a manufacturing method for the solar cell. The alcohol-free alkaline texturing solution for the mono-crystalline silicon wafer comprises an alkaline solution and a texturing additive, wherein the texturing additive is an alcohol-free additive. According to the alcohol-free alkaline texturing solution, isopropanol which is harmful to human bodies and the environment adopted in the conventional alkaline texturing solution is abandoned; the corrosion depth of the surface of a silicon wafer can be controlled within the range of 5 to 7.5 mu m easily by performing surface texturing on the mono-crystalline silicon wafer obtained by performing linear cutting on a diamond by only adopting the alcohol-free alkaline texturing solution consisting of the alkaline solution and the alcohol-free additive; meanwhile, the corrosion speed is guaranteed; the anisotropy of corrosion is enhanced; pyramid structures on the surface of the silicon wafer obtained after the texturing are small and uniform in size, so that the reflectivity of the surface of the silicon wafer is reduced by about 1 percent; the light absorption capacity of the surface of the silicon wafer is increased; the conversion efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, in particular to a kind of for monocrystalline silicon piece without alcohol alkalescence Woolen-making liquid, etching method, solar battery sheet and preparation method thereof.
Background technology
In the making processes of solar battery sheet, in order to improve performance and the efficiency of solar cell, need to make matte at silicon chip surface, effectively suede structure can make incident sunlight in silicon chip surface multiple reflections and refraction, change the working direction of incident light in silicon chip, extend light path on the one hand, increased the specific absorption of silicon chip to infrared light; Make on the other hand more photon be absorbed generation photo-generated carrier near the region near p-n junction, these photo-generated carriers are more easily collected, and have therefore increased the collection effciency of photo-generated carrier.Therefore, making herbs into wool is the important step of making solar cell, to make the effective ways with the silicon face that reduces reflection function, therefore, in the making processes of solar cell, generally all adopt the mode of making herbs into wool by silicon chip surface texturing, utilize the absorption of surperficial light trapping effect promotion sunlight, improve the efficiency of conversion of battery.
Silicon wafer wool making is divided into sour making herbs into wool and alkali making herbs into wool, and sour making herbs into wool adopt acid solution (nitric acid, hydrochloric acid, hydrofluoric acid etc.) to carry out isotropic etch to silicon chip, is generally applied to the making herbs into wool of polycrystal silicon cell; And alkali making herbs into wool adopts alkaline solution to Silicon Crystal Anisotropic Etching, the matte of monocrystalline silicon battery normally utilizes alkali making herbs into wool to form, utilize the alkaline solution erosion rate different to the different surfaces of silicon chip, as slower to the corrosion of (111) crystal face, and very fast to the corrosion of (100) crystal face.When adopting alkaline solution to corrode silicon chip surface, due to anisotropic corrosive property, can at silicon chip surface, form the surface structure structures such as pyramid, inverted pyramid, the pyramid textured surfaces of these formation makes incident light multiple reflections, greatly strengthen the absorption of light, improved efficiency of conversion.
With respect to silicon single crystal, polysilicon has outstanding advantage cheaply, in solar cell market in recent years, is seized of larger ratio.But grain orientation has randomness in polysilicon, and have a large amount of crystal boundaries and defect, as the body material of battery, quality is not as good as silicon single crystal.On the other hand, because the orientation of each crystal grain in polysilicon chip differs, in follow-up cell piece making processes, can not use the good alkali etching method of comprehensive benefit.Aborning, for the isotropic sour making herbs into wool mode of the general employing of polysilicon, by improving, can play good texturing effect, but compare with alkali making herbs into wool, or the larger gap of existence.
Consider that silicon single crystal has the advantages such as low defect, high conversion efficiency, high efficiency, its efficiency of conversion is up to more than 19%, particularly the widespread use of alkali etching method makes monocrystalline silicon battery sheet have more advantage, the making herbs into wool of monocrystalline silicon piece process alkali is at 1000nm wavelength place, its reflectivity can remain on below 10%, with respect to polycrystal silicon cell, there is more excellent performance, therefore there is higher productive value on producing.
Main conventional multi-thread unidirectional cutting technique use mortar and the steel wire of adopting cuts silicon ingot at present, during cutting, can produce certain affected layer at silicon chip surface, this affected layer is darker, be generally 5～11 μ m, if this affected layer can not be got rid of effectively, will affect the efficiency of conversion of battery, therefore generally adopting the silicon single crystal with the following method above-mentioned conventional cutting method being obtained in producing processes: lift slowly-> of pre-washing-> washing-> making herbs into wool-> washing-> pickling (hydrofluoric acid and hydrochloric acid)-> pickling (hydrofluoric acid)-> hot water wash-> warm air drying.In this operation steps, adopt alkali making herbs into wool to make surperficial light trapping structure, reflectivity is 9.1～10%.Alkali making herbs into wool refers to the mixing solutions that potassium hydroxide or sodium hydroxide, Virahol and making herbs into wool additive are housed in texturing slot, then the silicon chip after washing is soaked into making herbs into wool in texturing slot, and in texturing slot, silicon reacts as follows with alkaline solution generation: Si+2H
2o+2OH
-=SiO
2(OH)
2+ 2H
2.In making herbs into wool process, because there is the participation reaction of Virahol and making herbs into wool additive not too violent, Virahol can reduce silicon chip surface tension force, reduces bubble in the absorption of silicon face, promotes the release of bubble hydrogen, makes the pyramid texture that forms after making herbs into wool uniformity more.
But along with the widespread use of diamond wire saw silicon chip, consider that diamond wire saw silicon chip has more advantage, people no longer adopt existing multi-thread unidirectional cutting technique.But current existing problem is the damaged layer on surface of silicon slice after diamond wire saw to be reduced, if adopt again above-mentioned alkaline Woolen-making liquid to carry out making herbs into wool, can cause the erosion rate of silicon chip surface slack-off and inhomogeneous, make depth of corrosion defective, finally cause the pyramidal size of silicon chip surface systematism structure inhomogeneous, and then reduced the efficiency of conversion of solar cell.Add that Virahol is water white transparency volatile liquid, there is the smell like ethanol and acetone mixture, its steam-energy produces minimal irritation to eyes, nose and throat, also can be absorbed by the body by skin, and Virahol is volatile, therefore high to the stopping property requirement of equipment in process of production, the waste liquid that contains after treatment Virahol is also one of important source of pollution of industry, follow-up pollution processing costs is higher, does not meet the energy-saving and emission-reduction of enterprise and the requirement of green non-pollution.
Therefore,, in order to improve conversion efficiency of solar cell, be necessary to develop a kind of applicable diamond wire saw silicon chip and to human body and environmentally friendly leather producing process.
Summary of the invention
The present invention aim to provide a kind of for monocrystalline silicon piece without alcohol alkalescence Woolen-making liquid, etching method, solar battery sheet and preparation method thereof, less and the uniformity of pyramid structure on the matte that employing obtains after the monocrystalline silicon sheet surface making herbs into wool after to diamond wire saw without alcohol alkalescence Woolen-making liquid, the surface albedo that has reduced silicon chip, has improved conversion efficiency of solar cell.
To achieve these goals, according to an aspect of the present invention, provide a kind of for monocrystalline silicon piece without alcohol alkalescence Woolen-making liquid, without alcohol alkalescence Woolen-making liquid, comprise alkaline solution and making herbs into wool additive, making herbs into wool additive is without alcohol additive.
Further, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 1.5～7%, and the mass percent concentration of making herbs into wool additive is 0.3～0.8%.
Further, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 3%～5%, and the mass percent concentration of making herbs into wool additive is 0.4～0.65%.
Further, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 4%, and the mass percent concentration of making herbs into wool additive is 0.5%.
Further, without alcohol additive, comprise tensio-active agent, matte growth regulator and defoamer.
According to a further aspect in the invention, provide a kind of alkaline etching method of monocrystalline silicon piece, comprised the following steps: S1, prepare above-mentioned any without alcohol alkalescence Woolen-making liquid; S2, is placed in the monocrystalline silicon piece after diamond wire saw without the making herbs into wool of alcohol alkalescence Woolen-making liquid; And S3, take out monocrystalline silicon piece, washing, pickling, dry, obtain the monocrystalline silicon piece after making herbs into wool.
Further, the monocrystalline silicon piece after diamond wire saw is placed in without before alcohol alkalescence Woolen-making liquid, monocrystalline silicon piece being carried out to pre-washing and washing.
Further, the monocrystalline silicon piece after diamond wire saw is placed in without after alcohol alkalescence Woolen-making liquid, will be heated to 80 ℃～90 ℃ without alcohol alkalescence Woolen-making liquid and keeps 13～17 minutes.
Further, in the process of making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid is 150～250ml/100 sheet.
In accordance with a further aspect of the present invention, provide a kind of solar battery sheet making method, comprised the monocrystalline silicon piece after diamond wire saw is carried out to making herbs into wool, this making herbs into wool step adopts above-mentioned any alkaline etching method making herbs into wool.
According to another aspect of the invention, provide a kind of solar battery sheet, this solar battery sheet is for adopting the making method of above-mentioned solar battery sheet to be made.
Apply technical scheme of the present invention, abandoned in conventional alkaline Woolen-making liquid, adopt to human body and the harmful Virahol of environment, monocrystalline silicon piece diamond wire saw being obtained without alcohol alkalescence Woolen-making liquid that only adopts alkaline solution and form without alcohol additive carries out surface wool manufacturing and just the depth of corrosion of silicon chip surface can be controlled at relatively easily within the scope of 5～7.5 μ m, guarantee the speed of corrosion simultaneously, strengthened the anisotropy of corrosion, little and the big or small uniformity of pyramid texture volume of the silicon chip surface obtaining after making herbs into wool, make the reflectivity of silicon chip surface reduce by 1% left and right, increased the absorption of silicon chip surface to light, improved the efficiency of conversion of solar cell.
Accompanying drawing explanation
The Figure of description that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
The scanning electron microscope (SEM) photograph of the monocrystalline silicon sheet surface of the etching method making that Fig. 1 is employing prior art;
Fig. 2 is for adopting the scanning electron microscope (SEM) photograph of the monocrystalline silicon sheet surface of etching method making of the present invention; And
Fig. 3 is for adopting etching method of the present invention and the reflectance varies trend schematic diagram that adopts the monocrystalline silicon sheet surface of etching method making of the prior art.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
Erosion rate declines when solving the fine-hair maring using monocrystalline silicon slice after adopting conventional leather producing process to diamond wire saw, the inhomogeneous consistent problem of pyramid structure size of silicon chip surface after depth of corrosion reduction and making herbs into wool, the invention provides a kind of for monocrystalline silicon piece without alcohol alkalescence Woolen-making liquid, this is comprised of alkaline solution and making herbs into wool additive without alcohol alkalescence Woolen-making liquid, and making herbs into wool additive is without alcohol additive.
The present invention has abandoned the Virahol adopting in conventional alkaline Woolen-making liquid, monocrystalline silicon piece diamond wire saw being obtained without alcohol alkalescence Woolen-making liquid that only adopts alkaline solution and form without alcohol additive carries out surface wool manufacturing, just the depth of corrosion of silicon chip surface can be controlled at relatively easily within the scope of 5～7.5 μ m, guaranteed the speed of corrosion simultaneously, strengthened the anisotropy of corrosion, little and the big or small uniformity of pyramid texture volume of the silicon chip surface obtaining after making herbs into wool, make the reflectivity of silicon chip surface reduce by 1% left and right, increased the absorption of silicon chip surface to light, improved the efficiency of conversion of solar cell.
Wherein alkaline solution is sodium hydroxide solution and/or potassium hydroxide solution, the present invention preferably but be not limited to above-mentioned alkaline solution, adopt above-mentioned alkaline solution to have anisotropic etch to material, can corrode making herbs into wool with silicon face better, and then the sunken light matte of the uniform pyramid texture of formative tissue, the while can also be removed greasy dirt and the scroll saw affected layer of silicon chip surface preferably.
For fear of alkaline Woolen-making liquid, human body and environment are had a negative impact, the present invention selects without alcohol additive, maximum feature without alcohol additive is environmentally friendly, without alcohol additive, mainly tensio-active agent, matte growth regulator and defoamer three parts, consist of, concrete composition is mainly Sodium Benzoate, xitix, sodium hydroxide and water etc.Wherein tensio-active agent is mainly used to strengthen silicon chip surface wetting ability, accelerates silicon slice corrosion and open bubble and departs from, and removes silicon chip surface greasy dirt; Matte growth regulator is mainly used to control the corrosion speed of silicon chip in alkali lye, strengthens interplanar anisotropic; Defoamer is mainly used in replacing the effect of Traditional IP A, and the bubble of eliminating silicon chip surface is de-, and the auxiliary matte pyramid profile of improving, and promotes the anisotropy of reaction.In inorganic additives, contain a large amount of organic groups, can be used as the nucleation site of silicon chip surface, greatly improve the nucleation density of " pyramid ".In addition, thus without the use of alcohol additive, also can carry out that modification effectively prevents that Wafer Cleaning is clean, clean-out system is residual and the color spot, the matte that cause are less than normal etc. abnormal to silicon chip surface.
Visible, the present invention has abandoned the Virahol adding in prior art neutral and alkali Woolen-making liquid, only adopt alkaline solution and the fine-hair maring using monocrystalline silicon slice after to diamond wire saw without alcohol additive, guaranteed equally erosion rate, make relatively easily the depth of corrosion of silicon chip surface be controlled within the scope of 5～7.5 μ m, reduce the tension force of silicon chip surface simultaneously, reduce bubble in the absorption of silicon face, promote the release of bubble hydrogen, strengthened the anisotropy of corrosion, make pyramid texture after making herbs into wool uniformity more, can also increase the viscosity of liquid simultaneously, weaken the corrosion dynamics of KOH solution to silicon chip, strengthen the anisotropy of corrosion, simplified production process simultaneously, reduced the pollution of environment.
In order to make erosion rate and depth of corrosion meet better making herbs into wool demand, make after making herbs into wool silicon chip surface pyramid texture volume size uniformity more, reduce largely the reflectivity of silicon chip surface, according to a kind of exemplary embodiment of the present invention, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 1.5～7%, and the mass percent concentration of making herbs into wool additive is 0.3～0.8%.Preferably, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 3～5%, and the mass percent concentration of making herbs into wool additive is 0.4～0.65%.Further preferably, in without alcohol alkalescence Woolen-making liquid, the mass percent concentration of alkaline solution is 4%, and the mass percent concentration of making herbs into wool additive is 0.5%.The present invention within the scope of aforementioned proportion, makes alkaline solution and making herbs into wool additive control biphase equilibrium, thereby has obtained being more conducive to improve the pyramid texture pattern of conversion efficiency of solar cell.
According to a further aspect in the invention, improved a kind of alkaline etching method for silicon single crystal, comprised the following steps: S1, prepare above-mentioned any without alcohol alkalescence Woolen-making liquid; S2, is placed in the monocrystalline silicon piece after diamond wire saw without the making herbs into wool of alcohol alkalescence Woolen-making liquid; And S3, take out monocrystalline silicon piece, washing, pickling, dry, obtain the monocrystalline silicon piece after making herbs into wool.This making method is simple to operate, is applicable to lower-cost groove type etching equipment.
In making herbs into wool process, without alcohol alkalescence Woolen-making liquid, be constantly consumed, the state without the concentration of alcohol alkalescence Woolen-making liquid in continuous variation, in order not affect its making herbs into wool effect, needs to supplement without alcohol alkalescence Woolen-making liquid and make its concentration meet the requirement of making herbs into wool.Preferably, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 150～250ml/100 sheet.If amount infused, higher than 250ml/100 sheet, can excessively weaken the corrosion dynamics of KOH solution to silicon chip, can not form well pyramid structure; On the contrary, if amount infused lower than 150ml/100 sheet, can cause corrosion inhomogeneous, pyramid size evenly differs.
Preferably, the monocrystalline silicon piece after diamond wire saw being placed in to alkaline Woolen-making liquid treats making herbs into wool monocrystalline silicon piece before soaking and carries out successively pre-washing and washing.By pre-washing, the organic impurity after the cutting of diamond stone line can be washed, after can washing away pre-washing by washing, remain in the liquid on silicon chip surface, pre-washing technique can increase the absorption of silicon chip to incident light, be conducive to improve the short-circuit current of battery, significant to promoting cell photoelectric efficiency of conversion.
Monocrystalline silicon piece after diamond wire saw pre-washing and washing is placed in without alcohol alkalescence Woolen-making liquid, heating keeps 13～17 minutes without alcohol alkalescence Woolen-making liquid to 80 ℃～90 ℃, and this step can make monocrystalline silicon sheet surface fully corrode and reach certain depth of corrosion.Adopt afterwards mechanical manipulator that the monocrystalline silicon piece after corrosion is taken out, put into afterwards washing bath washing and remove residual alkaline Woolen-making liquid.Preferably in the bottom of washing bath, bubbling device is set, a large amount of bubbles that produce are like this conducive to wash the alkaline Woolen-making liquid that sticks to silicon chip surface, promote wash effect.Because silicon chip surface after making herbs into wool has more groove structure, make a rinsing be difficult to the alkaline Woolen-making liquid that sticks to silicon chip surface to clean up, thereby pickling after washing.Preferably, pickling is divided into two steps and carries out, first adopt hydrochloric acid and hydrofluoric acid mixed solution washing, in this step Main Function be in and silicon chip surface on however, residual base solution, in addition, chlorion in pickle solution also can be removed with some heavy metal pickup ion forming complex, thereby plays the effect that potential metal ion is stained of removing.Adopt afterwards hydrofluoric acid wash, this step can be by silicon chip surface deoxidation layer, and make silicon chip surface is repellency simultaneously, is convenient to warm air drying subsequently.After pickling finishes, silicon chip is sent into secondary rinsing in new washing bath, the object of secondary rinsing is to remove the pickling debris of silicon chip surface, the same water-washing step of wherein rinsing details.After washing, silicon chip is slowly lifted out, warm air drying, has just completed alkaline making herbs into wool step.
According to another aspect of the invention, also provide a kind of making method of solar battery sheet, comprised diamond wire saw is obtained to fine-hair maring using monocrystalline silicon slice, this making herbs into wool step is for adopting above-mentioned any alkaline etching method making herbs into wool.
According to a further aspect of the present invention, also provide a kind of solar battery sheet, this solar battery sheet adopts the making method of above-mentioned solar battery sheet to be made.
Below in conjunction with specific embodiment and comparative example, further illustrate beneficial effect of the present invention.
Embodiment 1
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 4%, without the mass percent concentration of alcohol additive solution, is 0.5%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 3 minutes, wash afterwards 3 minutes, after washing, monocrystalline silicon piece enters to contain and above-mentionedly without surface wool manufacturing in the texturing slot of alcohol alkalescence Woolen-making liquid, keeps 17 minutes, and the temperature of alkaline Woolen-making liquid is 80 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 3 minutes, then be sent to 3 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, enter into afterwards the pickling tank pickling 10 minutes that fills 10wt% hydrofluoric acid, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused of making herbs into wool process neutral and alkali Woolen-making liquid is 150ml/100 sheet.
Embodiment 2
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 3%, without the mass percent concentration of alcohol additive solution, is 0.4%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 5 minutes, wash afterwards 5 minutes, after washing, monocrystalline silicon piece enters to contain and above-mentionedly without surface wool manufacturing in the texturing slot of alcohol alkalescence Woolen-making liquid, keeps 13 minutes, and the temperature of alkaline Woolen-making liquid is 90 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 5 minutes, then be sent to 3 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, enter into afterwards the pickling tank pickling 10 minutes that fills 10wt% hydrofluoric acid, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 250ml/100 sheet.
Embodiment 3
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 5%, without the mass percent concentration of alcohol additive solution, is 0.65%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 5 minutes, wash afterwards 5 minutes, the rear monocrystalline silicon piece of washing enters surface wool manufacturing in the texturing slot that contains above-mentioned alkaline Woolen-making liquid and keeps 13 minutes, and the temperature of alkaline Woolen-making liquid is 85 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 5 minutes, then be sent to 3 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, enter into afterwards the pickling tank pickling 10 minutes that fills 10wt% hydrofluoric acid, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 250ml/100 sheet.
The scanning electron microscope (SEM) photograph of the monocrystalline silicon sheet surface obtaining after making herbs into wool in embodiment 3 as shown in Figure 1, as can be seen from Figure 1, the fine-hair maring using monocrystalline silicon slice after adopting alkaline Woolen-making liquid of the present invention to diamond wire saw, the pyramid size of formation is smaller, be approximately 2～3 μ m, and it is more even to distribute.
Embodiment 4
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 1.5%, without the mass percent concentration of alcohol additive solution, is 0.3%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 5 minutes, wash afterwards 5 minutes, after washing, monocrystalline silicon piece enters to contain and above-mentionedly without surface wool manufacturing in the texturing slot of alcohol alkalescence Woolen-making liquid, keeps 15 clocks, without the temperature of alcohol alkalescence Woolen-making liquid, is 80 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 5 minutes, then be sent to 5 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, send into afterwards in the pickling tank that fills 10wt% hydrofluoric acid pickling 8 minutes, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 200ml/100 sheet.
Embodiment 5
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 7%, without the mass percent concentration of alcohol additive solution, is 0.8%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 5 minutes, wash afterwards 5 minutes, after washing, monocrystalline silicon piece enters to contain and above-mentionedly without surface wool manufacturing in the texturing slot of alcohol alkalescence Woolen-making liquid, keeps 17 clocks, without the temperature of alcohol alkalescence Woolen-making liquid, is 90 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 5 minutes, then be sent to 5 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, send into afterwards in the pickling tank that fills 10wt% hydrofluoric acid pickling 8 minutes, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 150ml/100 sheet.
Embodiment 6
(model is TS42 without alcohol additive for the sodium hydroxide solution that is 46% by 50ml mass percent concentration and 10ml, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with without alcohol alkalescence Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 0.7%, without the mass percent concentration of alcohol additive solution, is 0.2%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 8 minutes, wash afterwards 8 minutes, the rear monocrystalline silicon piece of washing is sent into surface wool manufacturing in the texturing slot that contains above-mentioned alkaline Woolen-making liquid and is kept 14 clocks, without alcohol alkalescence Woolen-making liquid temperature, is 90 ℃.
Monocrystalline silicon piece after making herbs into wool enters in washing bath and washes 5 minutes, then be sent to 5 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, send into afterwards in the pickling tank that fills 10wt% hydrofluoric acid pickling 8 minutes, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused without alcohol alkalescence Woolen-making liquid in making herbs into wool process is 180ml/100 sheet.
Comparative example 1
The sodium hydroxide solution that is 46% by 50ml mass percent concentration, 85.7ml Virahol and 29ml have alcohol additive, and (model is S929, by Changzhou, Shi Chuan Energy Science Co., Ltd provides) be dissolved in deionized water, be mixed with alkaline Woolen-making liquid, wherein the mass percent concentration of sodium hydroxide solution is 1.0%, and the mass percent concentration that has alcohol making herbs into wool additive solution is 0.1%.
Adopt hydrogen peroxide and sodium hydroxide mixed solution (V
hydrogen peroxide: V
sodium hydroxide: V
water=1.5:7:115) monocrystalline silicon piece after diamond wire saw is carried out to pre-washing 3 minutes, wash afterwards 3 minutes, the rear monocrystalline silicon piece of washing enters surface wool manufacturing in the texturing slot that contains above-mentioned alkaline Woolen-making liquid and keeps 17 minutes, and the temperature of alkaline Woolen-making liquid is 80 ℃.
Monocrystalline silicon piece after suede is sent in washing bath and washed 3 minutes, then be sent to 3 minutes metal ions with removal silicon chip surface of (volume ratio of hydrofluoric acid and hydrochloric acid is 1:3) pickling in the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution, enter into afterwards the pickling tank pickling 10 minutes that fills 10wt% hydrofluoric acid, entering into afterwards washing bath washes, warm air drying after slowly lifting out, obtain monocrystalline silicon piece after making herbs into wool, the amount infused of making herbs into wool process neutral and alkali Woolen-making liquid is 150ml/100 sheet.
The scanning electron microscope (SEM) photograph of the monocrystalline silicon sheet surface in comparative example 1 after making herbs into wool as shown in Figure 2, as can be seen from Figure 2, fine-hair maring using monocrystalline silicon slice after adopting existing alkaline Woolen-making liquid to diamond wire saw, the pyramid size forming on monocrystalline silicon piece texture is larger, be about 8～10 μ m, size distribution is uneven.Trace it to its cause, mainly because the damaged layer on surface of silicon slice after diamond wire saw reduces, according to the alkali leather producing process of above-mentioned routine, can cause the erosion rate of silicon chip surface slack-off and inhomogeneous, reduce depth of corrosion, finally cause the pyramidal size of silicon chip surface systematism structure inhomogeneous, and then reduced the efficiency of conversion of solar cell.
Adopt D8J integral refractometer to detect the surface albedo of monocrystalline silicon piece, its reflectivity trend is shown in Fig. 3.As can be seen from Figure 3, adopt alkaline etching method of the present invention to increase the absorption of silicon chip surface to light, reduced significantly the surface albedo of silicon single crystal, compare with comparative example 1, the reflectivity of the monocrystalline silicon piece of making in embodiment 1 has reduced nearly 1.0%.
Monocrystalline silicon piece after making herbs into wool in embodiment 1 to 6 and comparative example 1 is carried out successively under the same conditions to polishing, diffusion knot processed, etching edge, dephosphorization silex glass, plasma etching, goes borosilicate glass, wet passivation, coated with antireflection film, silk screen printing, Fast Sintering, form the solar battery sheet of correspondence in embodiment 1 to 6 and comparative example 1.Adopt halm testing tool to measure the Uoc of solar battery sheet, Isc, FF, Eff, specific performance data are in Table 1.
Table 1
As can be seen from Table 1, adopt etching method of the present invention to promote significantly open circuit voltage and the short-circuit current of solar battery sheet, and increased the packing factor of cell piece, improved the photoelectric transformation efficiency of solar battery sheet.
As can be seen from the above description, the present invention has abandoned the Virahol adopting in conventional alkaline Woolen-making liquid, only adopt monocrystalline silicon piece diamond wire saw being obtained without alcohol alkalescence Woolen-making liquid that alkaline solution and making herbs into wool additive form to carry out surface wool manufacturing, just the depth of corrosion of silicon chip surface can be controlled at relatively easily within the scope of 5～7.5 μ m, guarantee the speed of corrosion simultaneously, strengthened the anisotropy of corrosion, little and the big or small uniformity of pyramid texture volume of the silicon chip surface obtaining after making herbs into wool, make the reflectivity of silicon chip surface reduce by 1% left and right, increased the absorption of silicon chip surface to light, improved the efficiency of conversion of solar cell.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
- For monocrystalline silicon piece without an alcohol alkalescence Woolen-making liquid, it is characterized in that, describedly without alcohol alkalescence Woolen-making liquid, comprise alkaline solution and making herbs into wool additive, described making herbs into wool additive is without alcohol additive.
- 2. according to claim 1ly without alcohol alkalescence Woolen-making liquid, it is characterized in that, described without alcohol alkalescence Woolen-making liquid in, the mass percent concentration of described alkaline solution is 1.5～7%, the mass percent concentration of described making herbs into wool additive is 0.3～0.8%.
- 3. according to claim 2ly without alcohol alkalescence Woolen-making liquid, it is characterized in that, described without alcohol alkalescence Woolen-making liquid in, the mass percent concentration of described alkaline solution is 3%～5%, the mass percent concentration of described making herbs into wool additive is 0.4～0.65%.
- 4. according to claim 3ly without alcohol alkalescence Woolen-making liquid, it is characterized in that, described without alcohol alkalescence Woolen-making liquid in, the mass percent concentration of described alkaline solution is 4%, the mass percent concentration of described making herbs into wool additive is 0.5%.
- 5. according to claim 1ly without alcohol alkalescence Woolen-making liquid, it is characterized in that, describedly without alcohol additive, comprise tensio-active agent, matte growth regulator and defoamer.
- 6. an alkaline etching method for monocrystalline silicon piece, is characterized in that, comprises the following steps:S1, in preparation claim 1 to 5 described in any one without alcohol alkalescence Woolen-making liquid;S2, is placed in the monocrystalline silicon piece after diamond wire saw described without the making herbs into wool of alcohol alkalescence Woolen-making liquid; AndS3, takes out described monocrystalline silicon piece, washing, and pickling, dry, obtain the described monocrystalline silicon piece after making herbs into wool.
- 7. alkaline etching method according to claim 6, is characterized in that, the described monocrystalline silicon piece after diamond wire saw is placed in described without before alcohol alkalescence Woolen-making liquid, described monocrystalline silicon piece being carried out to pre-washing and washing.
- 8. alkaline etching method according to claim 6, is characterized in that, the described monocrystalline silicon piece after diamond wire saw is placed in described without after alcohol alkalescence Woolen-making liquid, by described, be heated to 80 ℃～90 ℃ keep 13～17 minutes without alcohol alkalescence Woolen-making liquid.
- 9. alkaline etching method according to claim 6, is characterized in that, the amount infused without alcohol alkalescence Woolen-making liquid described in the process of described making herbs into wool is 150～250ml/100 sheet.
- 10. a solar battery sheet making method, comprises the monocrystalline silicon piece after diamond wire saw is carried out to making herbs into wool, it is characterized in that, described making herbs into wool step adopts the alkaline etching method making herbs into wool described in any one in claim 6 to 9.
- 11. 1 kinds of solar battery sheets, is characterized in that, adopt the making method of solar battery sheet in claim 10 to be made.
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| CN113930846A (en) * | 2021-12-15 | 2022-01-14 | 南京日托光伏新能源有限公司 | Method for making wool by matching sodium hydroxide single crystals |
| CN114958378A (en) * | 2022-06-01 | 2022-08-30 | 松山湖材料实验室 | Alkali texturing liquid, crystalline silicon V-shaped groove suede structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839427A (en) * | 2012-08-28 | 2012-12-26 | 揭阳中诚集团有限公司 | Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof |
| CN102877135A (en) * | 2012-09-07 | 2013-01-16 | 昆山三峰光伏科技有限公司 | Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof |
| CN102888656A (en) * | 2012-09-28 | 2013-01-23 | 绍兴拓邦电子科技有限公司 | High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof |
-
2013
- 2013-11-25 CN CN201310609018.7A patent/CN103614778A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839427A (en) * | 2012-08-28 | 2012-12-26 | 揭阳中诚集团有限公司 | Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof |
| CN102877135A (en) * | 2012-09-07 | 2013-01-16 | 昆山三峰光伏科技有限公司 | Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof |
| CN102888656A (en) * | 2012-09-28 | 2013-01-23 | 绍兴拓邦电子科技有限公司 | High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 上海汉遥新材料科技有限公司: "太阳能电池辅助材料——单晶无醇制绒辅助剂", 《百度文库》 * |
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| CN114958378B (en) * | 2022-06-01 | 2023-06-23 | 松山湖材料实验室 | Alkali texturing liquid, crystalline silicon V-shaped groove textured structure and preparation method thereof |
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