CN105113015A - Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof - Google Patents

Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof Download PDF

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Publication number
CN105113015A
CN105113015A CN201510515172.7A CN201510515172A CN105113015A CN 105113015 A CN105113015 A CN 105113015A CN 201510515172 A CN201510515172 A CN 201510515172A CN 105113015 A CN105113015 A CN 105113015A
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China
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monocrystalline silicon
reflectivity
water
component
preparation
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CN201510515172.7A
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Chinese (zh)
Inventor
郭万东
孟祥法
董培才
陈伏洲
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Chinaland Solar Energy Co Ltd
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Chinaland Solar Energy Co Ltd
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Priority to CN201510515172.7A priority Critical patent/CN105113015A/en
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Abstract

The invention discloses low-reflectivity monocrystalline silicon piece texture surface making liquid. The low-reflectivity monocrystalline silicon piece texture surface making liquid is characterized by being prepared from, by weight, 0.5-1 part of sodium hydroxide, 3-5 parts of auxiliaries, 2-4 parts of ethoxy urea, 0.1-0.2 part of xanthan gum, 0.5-1 part of sodium lauroyl sarcosine, 0.1-0.2 part of decyl glucoside, 0.1-0.2 part of isopropyl myristate, 0.01-0.02 part of N-beta-hydroxyethyl ethylenediamine triacetate and 80-100 parts of water. According to the texture surface making liquid, the consistency and repeatability of a texture surface making process are effectively improved, the density of a fabric surface is increased, the dense fabric surface is formed, the surface reflectivity of silicon pieces is reduced, the photoelectric conversion efficiency is improved, and therefore the efficiency of a solar cell is improved, and product quality is improved. No IPA is included, environmental protection and human health are facilitated, and safety and environment friendliness are achieved.

Description

A kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces and preparation method thereof
Technical field
The present invention relates to silicon wafer wool making technology, be specifically related to a kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces and preparation method thereof.
Background technology
Along with energy dilemma is on the rise, sun power has become following most potential substitute energy, and solar cell industry development rapidly.Restrict one of difficult problem of its development is exactly how to improve solar cell photoelectric transformation efficiency, reduce costs.Wherein leather producing process is the important step improving photoelectric transformation efficiency.
Making herbs into wool is also known as " surface-texturing ", and effective suede structure makes incident light in silicon chip surface multiple reflections and refraction, adds the absorption of light, reduces reflectivity, contributes to the performance improving battery.Solar battery sheet reflectivity is low, and the battery conversion efficiency of solar battery sheet is high, just effectively can reduce its cost of electricity-generating silicon single crystal leather producing process and the most often use chemical corrosion method, generally uses NaOH/ Virahol (IPA) system.IPA has suitable toxicity, has harm to human body, and IPA is easy to volatilization in making herbs into wool process simultaneously, produces detrimentally affect to environment.
Summary of the invention
The object of this invention is to provide a kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces.
The present invention is achieved by the following technical solutions:
A kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, auxiliary agent 3-5, hydroxyethyl urea 2-4, xanthan gum 0.1-0.2, sodium lauroyl sareosine 0.5-1, decyl glucoside 0.1-0.2, Isopropyl myristate 0.1-0.2, N-beta-hydroxy ethyl-3-acetic acid ethylenediamine 0.01-0.02, water 80-100;
Wherein auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
A preparation method for antiradar reflectivity wool making solution for monocrystalline silicon pieces, comprises the following steps:
(1) sodium lauroyl sareosine, decyl glucoside are jointly added in the water of 1/3-1/2 weight, first 400-600r/min stirs 5-10min, then add Isopropyl myristate 70-80 DEG C, 400-600r/min stirs 10-20min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain antiradar reflectivity wool making solution for monocrystalline silicon pieces after filtration.
Advantage of the present invention is:
The present invention adopts the composite of the raw materials such as sodium lauroyl sareosine, the surface tension of effective hierarchy of control, the system of formation is made to have good surface property, stability and dispersive ability, there is good clean clean effect simultaneously, and in conjunction with auxiliary agent, surface modification is carried out to silicon chip, increase the nucleation site of silicon chip surface, promote the anisotropy of silicon single crystal, improve pyramidal density, by silicon chip surface film forming, control silicon chip corrosion speed in alkali lye, effectively improve consistence and the repeatability of leather producing process, improve matte density, form intensive matte, reduce the surface albedo of silicon chip, improve photoelectric transformation efficiency, thus improve solar battery efficiency, improve quality product, not containing IPA, be conducive to environment protection and HUMAN HEALTH, safety and environmental protection.
Embodiment
Non-limiting examples of the present invention is as follows:
A kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces, is prepared from by the component raw material of following weight (kg):
Sodium hydroxide 0.5, auxiliary agent 3, hydroxyethyl urea 2, xanthan gum 0.1, sodium lauroyl sareosine 0.5, decyl glucoside 0.1, Isopropyl myristate 0.1, N-beta-hydroxy ethyl-3-acetic acid ethylenediamine 0.01, water 80;
Wherein, auxiliary agent is made up of the raw material of following weight (kg): Chinese honey locust 10, nano titanium oxide 0.1, ammonium persulphate 0.1, vinyl-acetic ester 1, sodium bicarbonate 0.2, Dodecyl Polyglucosides 1, water 100; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 80 DEG C, 200r/min stirs 4h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5min in filtrate, then the ammonium persulfate solution 70 DEG C adding 2% stirs 1h, cooled and filtered, to obtain final product.
The preparation method of antiradar reflectivity wool making solution for monocrystalline silicon pieces comprises the following steps:
(1) sodium lauroyl sareosine, decyl glucoside are jointly added in the water of 1/3 weight, first 400r/min stirs 5min, then add Isopropyl myristate 80 DEG C, 400r/min stirs 10min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 60 DEG C, 400r/min stirs 2h, obtain B component;
(3) by mixed to component A and B component be incorporated in 80 DEG C, stir 15min under 1000r/min condition, namely obtain antiradar reflectivity wool making solution for monocrystalline silicon pieces after filtration.
Monocrystalline silicon piece is put into above-mentioned obtained Woolen-making liquid, under 80 DEG C of condition of water bath heating, carry out making herbs into wool, the making herbs into wool time is 15min, and the surface albedo of monocrystalline silicon piece is 8.5%, and matte pyramid is of a size of 1.5-3 μm, and size is even.

Claims (2)

1. an antiradar reflectivity wool making solution for monocrystalline silicon pieces, is characterized in that, it is obtained by the raw material of following weight parts:
Sodium hydroxide 0.5-1, auxiliary agent 3-5, hydroxyethyl urea 2-4, xanthan gum 0.1-0.2, sodium lauroyl sareosine 0.5-1, decyl glucoside 0.1-0.2, Isopropyl myristate 0.1-0.2, N-beta-hydroxy ethyl-3-acetic acid ethylenediamine 0.01-0.02, water 80-100;
Described auxiliary agent is made up of the raw material of following weight part: Chinese honey locust 10-15, nano titanium oxide 0.1-0.15, ammonium persulphate 0.1-0.2, vinyl-acetic ester 1-1.5, sodium bicarbonate 0.2-0.4, Dodecyl Polyglucosides 1-2, water 100-150; The preparation method of auxiliary agent is by spaonin powder comminution powder, the spaonin powder obtained and sodium bicarbonate, Dodecyl Polyglucosides are added to the water jointly 70-80 DEG C, 200-400r/min stirs 4-6h, cooled and filtered, vinyl-acetic ester and nano titanium oxide is added and ultrasonic disperse 5-10min in filtrate, then ammonium persulfate solution 70-80 DEG C that adds 2-5% is stirred 1-2h, cooled and filtered, to obtain final product.
2. the preparation method of a kind of antiradar reflectivity wool making solution for monocrystalline silicon pieces according to claim 1, is characterized in that, comprise the following steps:
(1) sodium lauroyl sareosine, decyl glucoside are jointly added in the water of 1/3-1/2 weight, first 400-600r/min stirs 5-10min, then add Isopropyl myristate 70-80 DEG C, 400-600r/min stirs 10-20min, must component A after cooling;
(2) first sodium hydroxide is dissolved in remaining water, then adds all the other raw materials 40-60 DEG C, 200-400r/min stirs 2-4h, obtain B component;
(3) by mixed to component A and B component be incorporated in 70-80 DEG C, stir 10-15min under 1000-1500r/min condition, namely obtain antiradar reflectivity wool making solution for monocrystalline silicon pieces after filtration.
CN201510515172.7A 2015-08-21 2015-08-21 Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof Pending CN105113015A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110295395A (en) * 2019-07-16 2019-10-01 中国科学院上海硅酸盐研究所 A kind of monocrystalline silicon flocking additive and its application for adding graphene oxide quantum dot
CN113981543A (en) * 2021-11-02 2022-01-28 常州君合科技股份有限公司 Texturing additive with liquid crystal structure and preparation method and application thereof

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CN101717946A (en) * 2009-12-30 2010-06-02 江阴市润玛电子材料有限公司 Liquid and method for etching texture on surfaces of silicon wafers
CN103219427A (en) * 2013-04-10 2013-07-24 中国科学院微电子研究所 Method for realizing single-sided texturing of high-light-trapping nano structure
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN103614778A (en) * 2013-11-25 2014-03-05 英利能源(中国)有限公司 Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
CN103938276A (en) * 2013-01-23 2014-07-23 尚德太阳能电力有限公司 Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN104576831A (en) * 2014-12-31 2015-04-29 江苏顺风光电科技有限公司 Monocrystalline silicon wafer alcohol-free texturing process and texturing additive

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Publication number Priority date Publication date Assignee Title
CN101717946A (en) * 2009-12-30 2010-06-02 江阴市润玛电子材料有限公司 Liquid and method for etching texture on surfaces of silicon wafers
CN103938276A (en) * 2013-01-23 2014-07-23 尚德太阳能电力有限公司 Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN103219427A (en) * 2013-04-10 2013-07-24 中国科学院微电子研究所 Method for realizing single-sided texturing of high-light-trapping nano structure
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN103614778A (en) * 2013-11-25 2014-03-05 英利能源(中国)有限公司 Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110295395A (en) * 2019-07-16 2019-10-01 中国科学院上海硅酸盐研究所 A kind of monocrystalline silicon flocking additive and its application for adding graphene oxide quantum dot
CN110295395B (en) * 2019-07-16 2021-04-16 中国科学院上海硅酸盐研究所 Monocrystalline silicon texturing additive added with graphene oxide quantum dots and application thereof
CN113981543A (en) * 2021-11-02 2022-01-28 常州君合科技股份有限公司 Texturing additive with liquid crystal structure and preparation method and application thereof
CN113981543B (en) * 2021-11-02 2024-04-12 常州君合科技股份有限公司 Texturing additive with liquid crystal structure and preparation method and application thereof

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