CN104576831A - Monocrystalline silicon wafer alcohol-free texturing process and texturing additive - Google Patents
Monocrystalline silicon wafer alcohol-free texturing process and texturing additive Download PDFInfo
- Publication number
- CN104576831A CN104576831A CN201410850205.9A CN201410850205A CN104576831A CN 104576831 A CN104576831 A CN 104576831A CN 201410850205 A CN201410850205 A CN 201410850205A CN 104576831 A CN104576831 A CN 104576831A
- Authority
- CN
- China
- Prior art keywords
- texturing
- wool
- additive
- making herbs
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000654 additive Substances 0.000 title claims abstract description 34
- 230000000996 additive effect Effects 0.000 title claims abstract description 33
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 14
- 235000008216 herbs Nutrition 0.000 claims description 46
- 210000002268 wool Anatomy 0.000 claims description 46
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 12
- 229940059574 pentaerithrityl Drugs 0.000 claims description 12
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 12
- 229920005552 sodium lignosulfonate Polymers 0.000 claims description 12
- 229960004418 trolamine Drugs 0.000 claims description 12
- 239000010985 leather Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 4
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 3
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- 235000011118 potassium hydroxide Nutrition 0.000 claims description 2
- 235000017550 sodium carbonate Nutrition 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 6
- 238000007781 pre-processing Methods 0.000 abstract description 5
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 9
- 208000020442 loss of weight Diseases 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229920000141 poly(maleic anhydride) Polymers 0.000 description 1
- -1 polyoxyethylene Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a monocrystalline silicon wafer alcohol-free texturing process and a texturing additive. Firstly, a silicon wafer is placed in preprocessing liquid so as to be preprocessed for 60 s to 300 s, and the silicon wafer is then placed in texturing liquid for texturing. The monocrystalline silicon texturing process includes the steps that deionized water is heated to 70 DEG C to 90 DEG C, sodium hydroxide or potassium hydroxide is added, and monocrystalline silicon texturing corrosive liquid is acquired. When the texturing additive is adopted for texturing, isopropanol or ethyl alcohol is not needed, tiny, even and dense pyramid texturing faces can be acquired, texturing cost is reduced, and environmental pollution is avoided. The preprocessing process is added before the texturing step, the silicon wafer acquired after texturing can be cleaner, rework caused by white spot fingerprints and the like can be reduced, and certain practical value is achieved.
Description
Technical field
The present invention relates to area of solar cell, especially a kind of monocrystalline silicon piece is without alcohol leather producing process and making herbs into wool additive thereof.
Background technology
In solar cell preparation process, in order to improve solar battery efficiency, need to make matte at monocrystalline silicon sheet surface, effective suede structure can make incident sunlight form secondary reflection or multiple reflections at silicon chip surface, increase the utilization ratio of light, make more photon be absorbed generation photo-generated carrier in the region near pn knot, these photo-generated carriers are more easily collected, because this increasing the collection effciency of photo-generated carrier.
Conventional leather producing process generally adopts sodium hydroxide or potassium hydroxide, and the mixing solutions adding suitable Virahol and water glass carries out making herbs into wool.Its shortcoming is: making herbs into wool pyramid is uneven, require high to original silicon chip condition of surface, chemical cost is larger, it is larger that leather producing process controls difficulty, the volatile quantities such as Virahol are large, and need constantly to adjust liquid, operation easier is high, thus bring making herbs into wool outward appearance rework rate very high, the problems such as cell piece turnover ratio is lower.
Disclosing a kind of binder component at application number (201310394735.2) " fine-hair maring using monocrystalline silicon slice additive and using method thereof " is: the water of polyoxyethylene glycol, Sodium Benzoate, citric acid, hydrolytic polymaleic anhydride, sodium acetate and surplus.Additionally provide a kind of etching method of monocrystalline silicon piece simultaneously, utilize above-mentioned Woolen-making liquid to carry out making herbs into wool to monocrystalline silicon piece.This additive does not need to use a large amount of Virahols or ethanol, substantially reduces the COD of Woolen-making liquid, reduces making herbs into wool cost, reduces environmental pollution.Disclose a kind of monocrystalline making herbs into wool additive at application number (201210474010.X) " a kind of low cost fine-hair maring using monocrystalline silicon slice additive ", its component is: complexing agent, honey, perfluorinated surfactant and deionized water form.This additive does not need to add additive in making herbs into wool process wider technological operation scope and the solution shelf life of Geng Gao.Although above two kinds of additives do not need to add Virahol, reduce the COD of making herbs into wool waste liquid, reduce making herbs into wool cost, all there is matte hickie white point after making herbs into wool, finger-marks equal proportion is higher, the more sordid problem of matte outward appearance.
Summary of the invention
The technical problem to be solved in the present invention is: propose a kind of monocrystalline silicon piece without alcohol leather producing process and making herbs into wool additive thereof, chemical reaction can be made evenly to carry out, and matte outward appearance is cleaner, and rework rate is lower.
The technical solution adopted in the present invention is: a kind of monocrystalline silicon piece, without alcohol leather producing process, comprises the following steps:
1) prepare pretreatment fluid: be the oxygenant of 0.1wt% ~ 10wt% by mass ratio, mass ratio is the alkali of 0.1wt% ~ 5wt%, joins in the water of surplus, mixes, and is heated to 60 DEG C-80 DEG C;
2) prepare making herbs into wool additive: by the tetramethylolmethane of 0.05wt% ~ 5wt%, the trolamine of 0.1wt% ~ 5wt%, the sodium lignosulfonate of 0.01wt% ~ 5wt%, joins in the water of surplus, is uniformly mixed and is mixed with additive;
3) Woolen-making liquid is prepared: by step 2) additive prepared joins in alkaline solution, and mix and be mixed with Woolen-making liquid, the mass ratio of making herbs into wool additive and alkaline solution is 0.1 ~ 5:100;
4) silicon chip is immersed in step 1) in preparation making herbs into wool pretreatment fluid in, pretreatment fluid temperature is 60 DEG C-80 DEG C, pretreatment time 60s ~ 300s; Be immersed in deionized water by silicon chip after pre-treatment completes, water temperature is room temperature, and washing time is 60s-300s; Step 3 is joined after having washed) in the Woolen-making liquid prepared, making herbs into wool temperature is 70 DEG C-90 DEG C, making herbs into wool time 600s ~ 1500s.
Further, step 1 of the present invention) in, oxygenant is one or more in clorox, hypochlorous acid and hydrogen peroxide; Described alkali is wherein one or more such as dilute sodium hydroxide, rare potassium hydroxide, sodium carbonate, sodium bicarbonate, ammoniacal liquor and organic bases.
Further say, step 3 of the present invention) in, sodium hydroxide or the potassium hydroxide solution of described alkaline solution to be massfraction be 0.1%-5%.
The component of making herbs into wool additive of the present invention comprises: sodium lignosulfonate, tetramethylolmethane, trolamine and deionized water; Each constituent mass degree is: tetramethylolmethane 0.05wt%-5wt%, trolamine 0.1wt%-5wt%, sodium lignosulfonate 0.01wt%-5wt%, and surplus is deionized water.Adopt this additive to carry out fine-hair maring using monocrystalline silicon slice, do not need to add Virahol and ethanol, decrease the COD of Woolen-making liquid, reduce making herbs into wool cost.
The invention has the beneficial effects as follows: pre-treatment is carried out to silicon chip, organic washing agent residual for silicon chip surface is removed clean, the hickie white point ratio of silicon chip outward appearance after making herbs into wool can be reduced, reduce matte rework rate, be conducive to the process stabilizing of crystal silicon solar energy battery, there is good practical value; And when the matte of monocrystalline silicon piece makes, do not need to use a large amount of Virahols or ethanol, substantially reduce Woolen-making liquid COD, and even, tiny, intensive matte pyramid can be obtained.
Embodiment
The present invention is further detailed explanation in conjunction with the embodiments now.
Embodiment one
Tetramethylolmethane, sodium lignosulfonate, trolamine and deionized water is adopted to be mixed with monocrystalline making herbs into wool additive, wherein the concentration of tetramethylolmethane is 0.2wt%, the concentration of sodium lignosulfonate is 0.1%, the concentration of trolamine is 0.5wt%, then the making herbs into wool additive of preparation is joined in the aqueous sodium hydroxide solution of massfraction 1wt%, mass ratio without alcohol monocrystalline making herbs into wool additive and deionized water is 1:100, then this Woolen-making liquid is heated to 75 DEG C.Adopt hydrogen peroxide, ammoniacal liquor and deionized water preparation pretreatment fluid, wherein the concentration of hydrogen peroxide is 1wt%, and the concentration of ammoniacal liquor is 0.5wt%, and this pretreatment fluid is heated to 60 DEG C.Be first 156mm × 156mm by area, the thickness monocrystalline silicon piece that is about 200um puts into preprocessing solution, carry out pre-treatment, pretreatment time is 150s, then by silicon chip extracting, washing 30s, then silicon chip is put into Woolen-making liquid, carry out making herbs into wool, making herbs into wool time 1080s, after making herbs into wool completes, cleaning, dries, weigh loss of weight, and carry out observation reflectivity and matte pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectivity about 11%.The matte pyramid microscope size obtained is even, tiny, intensive, and pyramid size is at 2um-5um.
Embodiment two
Tetramethylolmethane, sodium lignosulfonate, trolamine and deionized water is adopted to be mixed with monocrystalline making herbs into wool additive, wherein the concentration of tetramethylolmethane is 0.4wt%, the concentration of sodium lignosulfonate is 0.3%, the concentration of trolamine is 0.5wt%, then the making herbs into wool additive of preparation is joined in the aqueous sodium hydroxide solution of massfraction 1.5wt%, mass ratio without alcohol monocrystalline making herbs into wool additive and deionized water is 1.5:100, then this Woolen-making liquid is heated to 80 DEG C.Adopt clorox, sodium hydroxide and deionized water preparation pretreatment fluid, wherein the concentration of clorox is 1wt%, and the concentration of sodium hydroxide is 0.5wt%, and this pretreatment fluid is heated to 70 DEG C.Be first 156mm × 156mm by area, the thickness monocrystalline silicon piece that is about 200um puts into preprocessing solution, carry out pre-treatment, pretreatment time is 120s, then by silicon chip extracting, washing 60s, then silicon chip is put into Woolen-making liquid, carry out making herbs into wool, making herbs into wool time 1080s, after making herbs into wool completes, cleaning, dries, weigh loss of weight, and carry out observation reflectivity and matte pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectivity about 11%, pyramid matte size is at 2um-5um.
Embodiment three
Tetramethylolmethane, sodium lignosulfonate, trolamine and deionized water is adopted to be mixed with monocrystalline making herbs into wool additive, wherein the concentration of tetramethylolmethane is 0.6wt%, the concentration of sodium lignosulfonate is 0.5%, the concentration of trolamine is 1wt%, then the making herbs into wool additive of preparation is joined in the aqueous sodium hydroxide solution of massfraction 2wt%, mass ratio without alcohol monocrystalline making herbs into wool additive and deionized water is 2:100, then this Woolen-making liquid is heated to 75 DEG C.Adopt hypochlorous acid, sodium carbonate and deionized water preparation pretreatment fluid, wherein hypochlorous concentration is 1wt%, and the concentration of sodium carbonate is 0.5wt%, and this pretreatment fluid is heated to 70 DEG C.Be first 156mm × 156mm by area, the thickness monocrystalline silicon piece that is about 200um puts into preprocessing solution, carry out pre-treatment, pretreatment time is 150s, then by silicon chip extracting, washing 60s, then silicon chip is put into Woolen-making liquid, carry out making herbs into wool, making herbs into wool time 1200s, after making herbs into wool completes, cleaning, dries, weigh loss of weight, and carry out observation reflectivity and matte pattern.Gained silicon chip loss of weight 0.55g-0.75g, reflectivity about 10.8%, pyramid matte size is at 1.5um-5um.
The just the specific embodiment of the present invention described in above specification sheets, various illustrating is not construed as limiting flesh and blood of the present invention, person of an ordinary skill in the technical field after having read specification sheets can to before described embodiment make an amendment or be out of shape, and do not deviate from the spirit and scope of the invention.
Claims (4)
1. monocrystalline silicon piece is without an alcohol leather producing process, it is characterized in that comprising the following steps:
1) prepare pretreatment fluid: be the oxygenant of 0.1wt% ~ 10wt% by mass ratio, mass ratio is the alkali of 0.1wt% ~ 5wt%, joins in the water of surplus, mixes, and is heated to 60 DEG C-80 DEG C;
2) prepare making herbs into wool additive: by the tetramethylolmethane of 0.05wt% ~ 5wt%, the trolamine of 0.1wt% ~ 5wt%, the sodium lignosulfonate of 0.01wt% ~ 5wt%, joins in the water of surplus, is uniformly mixed and is mixed with additive;
3) Woolen-making liquid is prepared: by step 2) additive prepared joins in alkaline solution, and mix and be mixed with Woolen-making liquid, the mass ratio of making herbs into wool additive and alkaline solution is 0.1 ~ 5:100;
4) silicon chip is immersed in step 1) in preparation making herbs into wool pretreatment fluid in, pretreatment fluid temperature is 60 DEG C-80 DEG C, pretreatment time 60s ~ 300s; Be immersed in deionized water by silicon chip after pre-treatment completes, water temperature is room temperature, and washing time is 60s-300s; Step 3 is joined after having washed) in the Woolen-making liquid prepared, making herbs into wool temperature is 70 DEG C-90 DEG C, making herbs into wool time 600s ~ 1500s.
2. a kind of monocrystalline silicon piece as claimed in claim 1 is without alcohol leather producing process, it is characterized in that: described step 1) in, oxygenant is one or more in clorox, hypochlorous acid and hydrogen peroxide; Described alkali is wherein one or more such as dilute sodium hydroxide, rare potassium hydroxide, sodium carbonate, sodium bicarbonate, ammoniacal liquor and organic bases.
3. a kind of monocrystalline silicon piece as claimed in claim 1 is without alcohol leather producing process, it is characterized in that: described step 3) in, sodium hydroxide or the potassium hydroxide solution of described alkaline solution to be massfraction be 0.1%-5%.
4. monocrystalline silicon piece as claimed in claim 1 is without the making herbs into wool additive used by alcohol leather producing process, it is characterized in that: the component of making herbs into wool additive comprises: sodium lignosulfonate, tetramethylolmethane, trolamine and deionized water; Each constituent mass degree is: tetramethylolmethane 0.05wt%-5wt%, trolamine 0.1wt%-5wt%, sodium lignosulfonate 0.01wt%-5wt%, and surplus is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410850205.9A CN104576831B (en) | 2014-12-31 | 2014-12-31 | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410850205.9A CN104576831B (en) | 2014-12-31 | 2014-12-31 | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576831A true CN104576831A (en) | 2015-04-29 |
| CN104576831B CN104576831B (en) | 2016-10-12 |
Family
ID=53092458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410850205.9A Active CN104576831B (en) | 2014-12-31 | 2014-12-31 | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576831B (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105113016A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Deoiling and dewaxing monocrystalline silicon wafer texturing liquid and preparing method thereof |
| CN105113009A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environment-friendly monocrystalline silicon piece texturing liquid and preparation method thereof |
| CN105113015A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof |
| CN105113014A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Monocrystalline silicon wafer texturization liquid capable of removing peculiar smells and preparation method thereof |
| CN105133027A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105140348A (en) * | 2015-09-25 | 2015-12-09 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN105133031A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Bamboo extraction solution silicon wafer texture-etchant and preparation method therefor |
| CN105133028A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Antibacterial mildewproof silicon wafer texture-etchant and preparation method therefor |
| CN105133025A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | High-efficiency monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105133030A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Long-acting silicon wafer texture-etchant and preparation method therefor |
| CN105133026A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Low-damage monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105154984A (en) * | 2015-08-21 | 2015-12-16 | 合肥中南光电有限公司 | Easy-to-clean monocrystalline silicon wafer texturing solution and preparation method thereof |
| CN107287597A (en) * | 2016-03-30 | 2017-10-24 | 杭州聚力氢能科技有限公司 | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method |
| CN107523880A (en) * | 2016-06-20 | 2017-12-29 | 杭州聚力氢能科技有限公司 | For the processing method of bad after Wool-making agent of bad processing and preparation method thereof after monocrystalline silicon making herbs into wool and monocrystalline silicon making herbs into wool |
| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
| CN108660510A (en) * | 2018-05-10 | 2018-10-16 | 天津赤霄科技有限公司 | A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN111509077A (en) * | 2019-01-31 | 2020-08-07 | 嘉兴尚能光伏材料科技有限公司 | Monocrystalline silicon piece texturing method |
| CN116004233A (en) * | 2022-12-12 | 2023-04-25 | 嘉兴市小辰光伏科技有限公司 | Etching additive for improving uniformity of textured surface of silicon wafer and use method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Method for preparing porous pyramid structure on monocrystalline silicon substrate |
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| CN103290484A (en) * | 2012-02-28 | 2013-09-11 | 靖江市精益化学品有限公司 | Fourth generation alcohol-free additive not additionally added in suede preparation of monocrystalline silicon |
| CN103938276A (en) * | 2013-01-23 | 2014-07-23 | 尚德太阳能电力有限公司 | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method |
| EP2891637A1 (en) * | 2013-09-04 | 2015-07-08 | Changzhou Shichuang Energy Technology Co., Ltd. | Monocrystalline silicon wafer texturizing additive and use thereof |
-
2014
- 2014-12-31 CN CN201410850205.9A patent/CN104576831B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Method for preparing porous pyramid structure on monocrystalline silicon substrate |
| CN103290484A (en) * | 2012-02-28 | 2013-09-11 | 靖江市精益化学品有限公司 | Fourth generation alcohol-free additive not additionally added in suede preparation of monocrystalline silicon |
| CN103938276A (en) * | 2013-01-23 | 2014-07-23 | 尚德太阳能电力有限公司 | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method |
| EP2891637A1 (en) * | 2013-09-04 | 2015-07-08 | Changzhou Shichuang Energy Technology Co., Ltd. | Monocrystalline silicon wafer texturizing additive and use thereof |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154984A (en) * | 2015-08-21 | 2015-12-16 | 合肥中南光电有限公司 | Easy-to-clean monocrystalline silicon wafer texturing solution and preparation method thereof |
| CN105113009A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Environment-friendly monocrystalline silicon piece texturing liquid and preparation method thereof |
| CN105113015A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof |
| CN105113014A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Monocrystalline silicon wafer texturization liquid capable of removing peculiar smells and preparation method thereof |
| CN105133027A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105113016A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Deoiling and dewaxing monocrystalline silicon wafer texturing liquid and preparing method thereof |
| CN105133025A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | High-efficiency monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105133026A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Low-damage monocrystalline silicon slice texturing solution and preparation method thereof |
| CN105133031A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Bamboo extraction solution silicon wafer texture-etchant and preparation method therefor |
| CN105133028A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Antibacterial mildewproof silicon wafer texture-etchant and preparation method therefor |
| CN105133030A (en) * | 2015-08-25 | 2015-12-09 | 合肥中南光电有限公司 | Long-acting silicon wafer texture-etchant and preparation method therefor |
| CN105140348A (en) * | 2015-09-25 | 2015-12-09 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN105140348B (en) * | 2015-09-25 | 2017-01-11 | 山西潞安太阳能科技有限责任公司 | Backside passivation technology of polycrystal solar cell |
| CN107287597A (en) * | 2016-03-30 | 2017-10-24 | 杭州聚力氢能科技有限公司 | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method |
| CN107523880A (en) * | 2016-06-20 | 2017-12-29 | 杭州聚力氢能科技有限公司 | For the processing method of bad after Wool-making agent of bad processing and preparation method thereof after monocrystalline silicon making herbs into wool and monocrystalline silicon making herbs into wool |
| CN107858752A (en) * | 2017-11-03 | 2018-03-30 | 通威太阳能（安徽）有限公司 | A kind of crystal silicon Woolen-making liquid and preparation method thereof |
| CN108660510A (en) * | 2018-05-10 | 2018-10-16 | 天津赤霄科技有限公司 | A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method |
| CN111509077A (en) * | 2019-01-31 | 2020-08-07 | 嘉兴尚能光伏材料科技有限公司 | Monocrystalline silicon piece texturing method |
| CN111509077B (en) * | 2019-01-31 | 2022-01-18 | 嘉兴尚能光伏材料科技有限公司 | Monocrystalline silicon piece texturing method |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN116004233A (en) * | 2022-12-12 | 2023-04-25 | 嘉兴市小辰光伏科技有限公司 | Etching additive for improving uniformity of textured surface of silicon wafer and use method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576831B (en) | 2016-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104576831A (en) | Monocrystalline silicon wafer alcohol-free texturing process and texturing additive | |
| KR101613541B1 (en) | Additive for preparing suede on monocrystalline silicon chip and use method thereof | |
| CN101962811B (en) | Monocrystalline silicon piece texturizing liquid and texturizing method thereof | |
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| CN110396725A (en) | A kind of flocking additive and its application of monocrystalline silicon piece | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN102154711A (en) | Monocrystal silicon cleaning liquid and precleaning process | |
| CN108206225B (en) | A kind of fine-hair maring using monocrystalline silicon slice agent composition and its application | |
| CN101851756B (en) | Additive of alkali wool making solution for monocrystalline silicon pieces and using method | |
| CN102005504A (en) | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency | |
| CN102912451A (en) | Low-cost monocrystalline silicon wafer texturing additive | |
| CN102787361B (en) | A kind of additive for monocrystalline silicon etching solution | |
| CN103938276A (en) | Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method | |
| CN107675263A (en) | The optimization method of monocrystalline silicon pyramid structure matte | |
| CN101851757B (en) | Additive of wool making solution for monocrystalline silicon pieces and using method | |
| CN104562011A (en) | Texturing auxiliary agent for polycrystalline silicon wafer and texturing process thereof | |
| CN103774239A (en) | Cleaning and wool making technology for monocrystal silicon chip | |
| CN110205035A (en) | A kind of additive and its application, application method | |
| CN1983644A (en) | Production of monocrystalline silicon solar battery suede | |
| CN103981575A (en) | Annealing and wool-making method for monocrystalline silicon wafer | |
| CN103643289B (en) | The monocrystalline silicon surface structure of chemically based etching and preparation thereof and application | |
| CN102888657B (en) | Additive for fluffing agent of crystalline silicon solar cell | |
| CN102912450B (en) | Monocrystalline silicon flocking additive | |
| CN102838994B (en) | Etching glue composition used for manufacturing mono-crystalline silicon solar cell selective emitter | |
| CN102330155B (en) | Monocrystalline silicon wafer etching assistant, as well as preparation and using method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 213000 No. 99 Yang Hu Road, Wujin hi tech Industrial Development Zone, Jiangsu, Changzhou Applicant after: Jiangsu Shunfeng Photovoltaic Technology Co., Ltd. Address before: 213169, Jiangsu province Changzhou city Wujin District snow town industrial concentration area Applicant before: Jiangsu Shunfeng Photovoltaic Technology Co., Ltd. |
|
| COR | Change of bibliographic data | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |