CN105133030A - Long-acting silicon wafer texture-etchant and preparation method therefor - Google Patents

Long-acting silicon wafer texture-etchant and preparation method therefor Download PDF

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Publication number
CN105133030A
CN105133030A CN201510523578.XA CN201510523578A CN105133030A CN 105133030 A CN105133030 A CN 105133030A CN 201510523578 A CN201510523578 A CN 201510523578A CN 105133030 A CN105133030 A CN 105133030A
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China
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parts
silicon wafer
wool
texture
long
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Pending
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CN201510523578.XA
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Chinese (zh)
Inventor
郭万东
孟祥法
董培才
陈伏洲
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Chinaland Solar Energy Co Ltd
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Chinaland Solar Energy Co Ltd
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Priority to CN201510523578.XA priority Critical patent/CN105133030A/en
Publication of CN105133030A publication Critical patent/CN105133030A/en
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Abstract

The invention discloses a long-acting silicon wafer texture-etchant which is characterized by being prepared from the following raw materials in parts by weight: 0.1-0.2 part of dodecyl benzyl dimethyl ammonium chloride, 2-4 parts of triethanolamine, 1.5-2.5 parts of sodium hydroxide, 1-2 parts of glycerine ethoxylate, 1-2 parts of sodium perborate, 2-4 parts of ethylenediamine tetraacetic acid disodium, 0.2-0.4 part of barium petroleum sulfonate, 1-2 parts of hydroxyethyl cellulose, 5-10 parts of a texture-etching adjuster and 100-150 parts of water. The silicon wafer texture-etchant disclosed by the invention not only can improve the texture-etching efficiency and the stability of a texture-etching process and effectively improve the conversion efficiency of a battery sheet, but also can effectively solve the problem of instability of the texture-etchant in a using process, so that the service life of a solution is prolonged, the production cost is lowered and the product is stable in quality.

Description

A kind of long-acting silicon wafer wool making agent and preparation method thereof
Technical field
The present invention relates to silicon wafer wool making technology, be specifically related to a kind of long-acting silicon wafer wool making agent and preparation method thereof.
Background technology
Making herbs into wool is the important procedure in manufacture of solar cells technical process, utilize lower concentration alkalescence corrosive fluid to the anisotropic etch principle of silicon single crystal, " pyramid " structure is formed at silicon chip surface, reduce the reflectivity of silicon chip surface, increase the absorption of light, reduce reflectivity, improve the transformation efficiency of solar cell.At present, conventional leather producing process generally adopts sodium hydroxide or potassium hydroxide, and the mixing solutions adding suitable Virahol and water glass carries out making herbs into wool.The composition volatile quantities such as the Virahol that existing Woolen-making liquid uses are large, and the feature of environmental protection is poor, and work-ing life is short, and chemical cost amount is large, and reaction controllability is low, and making herbs into wool poor repeatability, directly affects quality product.And along with the prolongation of making herbs into wool time, making herbs into wool deleterious, can not obtain the matte of all even desirable pyramid size, the reaction solution that must will more renew, adds cost.In order to solve the problem, need to develop new Woolen-making liquid, improving matte homogeneity, improve making herbs into wool effect, improving the efficiency of conversion of solar battery sheet, extending the duration of service of Woolen-making liquid.
Summary of the invention
The object of this invention is to provide a kind of long-acting silicon wafer wool making agent.
The present invention is achieved by the following technical solutions:
A kind of long-acting silicon wafer wool making agent, it is obtained by the raw material of following weight parts:
Dodecylbenzyl ammonium chloride 0.1-0.2, trolamine 2-4, sodium hydroxide 1.5-2.5, polyoxyethylene glycerol ether 1-2, Sodium peroxoborate 1-2, disodium ethylene diamine tetraacetate 2-4, barium mahogany sulfonate 0.2-0.4, Natvosol 1-2, making herbs into wool conditioning agent 5-10, water 100-150;
Wherein making herbs into wool conditioning agent is made up of the raw material of following weight part: vinylbenzene 3-5, methyl methacrylate 2-4, polyvinyl alcohol 2-4, W-Gum 1-2, Potassium Persulphate 0.1-0.2, peregal 0.5-1, water 80-100; The preparation method of making herbs into wool conditioning agent be first polyvinyl alcohol and W-Gum are added 1/2-2/3 amount water in 50-60 DEG C stir 1-2h, add peregal 1000-1500r/min again and stir 5-10min, add vinylbenzene, methyl methacrylate and Potassium Persulphate mix and be heated to 85-95 DEG C of reaction 0.5-1h, finally add remaining water, cool after stirring, to obtain final product.
A preparation method for long-acting silicon wafer wool making agent, comprises the following steps:
(1) take raw material by weight, first sodium hydroxide is added to the water and dissolves completely, then add disodium ethylene diamine tetraacetate, Sodium peroxoborate 50-60 DEG C stirring 0.5-1h, stir 1-2h under then adding Natvosol similarity condition, cooled and filtered, obtain filtrate;
(2) dodecylbenzyl ammonium chloride, polyoxyethylene glycerol ether to be added in the filtrate in (1) 60-80 DEG C, 500-1000r/min stirs 10-15min, 5-10min is stirred under adding the same rotating speed of barium mahogany sulfonate after cooling again, finally add all the other raw material stirring even, obtain long-acting silicon wafer wool making agent.
Advantage of the present invention is:
The present invention introduces making herbs into wool additive, produces adsorption with silicon chip surface, improves nucleation density, increases the anisotropy of reaction, is conducive to improving matte pyramid profile, and formation density is large, the matte of uniform, controllable, improves making herbs into wool efficiency; Simultaneously, by the composite generation synergy of all the other raw materials, the corrosion speed of silicon chip in alkali lye can be controlled, improve the stability of leather producing process, the efficiency of conversion of effective raising cell piece, effectively can solve Woolen-making liquid instability problem in use again, improve bath life, reduce production cost, constant product quality.
Embodiment
Non-limiting examples of the present invention is as follows:
A kind of long-acting silicon wafer wool making agent, is prepared from by the component raw material of following weight (kg):
Dodecylbenzyl ammonium chloride 0.2, trolamine 4, sodium hydroxide 2.5, polyoxyethylene glycerol ether 2, Sodium peroxoborate 2, disodium ethylene diamine tetraacetate 4, barium mahogany sulfonate 0.4, Natvosol 2, making herbs into wool conditioning agent 10,150;
Wherein making herbs into wool conditioning agent is made up of the component raw material of following weight (kg): vinylbenzene 3, methyl methacrylate 2, polyvinyl alcohol 2, W-Gum 1, Potassium Persulphate 0.1, peregal 0.5, water 80; Polyvinyl alcohol and W-Gum are first added 60 DEG C of stirring 1h in the water of 1/2 amount by the preparation method of making herbs into wool conditioning agent, add peregal 1000r/min again and stir 5min, add vinylbenzene, methyl methacrylate and Potassium Persulphate mix and be heated to 85 DEG C of reaction 0.5h, finally add remaining water, cool after stirring, to obtain final product.
The preparation method of long-acting silicon wafer wool making agent comprises the following steps:
(1) take raw material by weight, first sodium hydroxide is added to the water and dissolves completely, then add disodium ethylene diamine tetraacetate, Sodium peroxoborate 60 DEG C stirring 1h, stir 2h under then adding Natvosol similarity condition, cooled and filtered, obtain filtrate;
(2) dodecylbenzyl ammonium chloride, polyoxyethylene glycerol ether to be added in the filtrate in (1) 80 DEG C, 1000r/min stirs 15min, 10min is stirred under adding the same rotating speed of barium mahogany sulfonate after cooling again, finally add all the other raw material stirring even, obtain long-acting silicon wafer wool making agent.
Be immersed in by monocrystalline silicon piece in silicon wafer wool making agent obtained above, making herbs into wool under 85 DEG C of conditions, the making herbs into wool time is 20min, and the silicon chip surface obtained forms the suede structure of size uniform, and pyramidal mean sizes is at 2-3 μm after testing, and reflectivity is 9.8%.

Claims (2)

1. a long-acting silicon wafer wool making agent, is characterized in that, it is obtained by the raw material of following weight parts:
Dodecylbenzyl ammonium chloride 0.1-0.2, trolamine 2-4, sodium hydroxide 1.5-2.5, polyoxyethylene glycerol ether 1-2, Sodium peroxoborate 1-2, disodium ethylene diamine tetraacetate 2-4, barium mahogany sulfonate 0.2-0.4, Natvosol 1-2, making herbs into wool conditioning agent 5-10, water 100-150;
Described making herbs into wool conditioning agent is made up of the raw material of following weight part: vinylbenzene 3-5, methyl methacrylate 2-4, polyvinyl alcohol 2-4, W-Gum 1-2, Potassium Persulphate 0.1-0.2, peregal 0.5-1, water 80-100; The preparation method of making herbs into wool conditioning agent be first polyvinyl alcohol and W-Gum are added 1/2-2/3 amount water in 50-60 DEG C stir 1-2h, add peregal 1000-1500r/min again and stir 5-10min, add vinylbenzene, methyl methacrylate and Potassium Persulphate mix and be heated to 85-95 DEG C of reaction 0.5-1h, finally add remaining water, cool after stirring, to obtain final product.
2. the preparation method of a kind of long-acting silicon wafer wool making agent according to claim 1, is characterized in that, comprise the following steps:
(1) take raw material by weight, first sodium hydroxide is added to the water and dissolves completely, then add disodium ethylene diamine tetraacetate, Sodium peroxoborate 50-60 DEG C stirring 0.5-1h, stir 1-2h under then adding Natvosol similarity condition, cooled and filtered, obtain filtrate;
(2) dodecylbenzyl ammonium chloride, polyoxyethylene glycerol ether to be added in the filtrate in (1) 60-80 DEG C, 500-1000r/min stirs 10-15min, 5-10min is stirred under adding the same rotating speed of barium mahogany sulfonate after cooling again, finally add all the other raw material stirring even, obtain long-acting silicon wafer wool making agent.
CN201510523578.XA 2015-08-25 2015-08-25 Long-acting silicon wafer texture-etchant and preparation method therefor Pending CN105133030A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106521634A (en) * 2016-10-18 2017-03-22 湖州三峰能源科技有限公司 Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof
CN110592681A (en) * 2019-09-30 2019-12-20 四川英发太阳能科技有限公司 Texturing process for improving efficiency and yield of reworked sheets

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110275222A1 (en) * 2009-12-29 2011-11-10 Zhi-Wen Sun Silicon Texture Formulations With Diol Additives And Methods of Using The Formulations
CN102315113A (en) * 2011-10-20 2012-01-11 天津理工大学 Solar-battery monocrystalline-silicon floss-making fluid with low volatility and application thereof
CN102644121A (en) * 2012-04-28 2012-08-22 铜陵凯顺生物科技有限公司 Alcohol-free etching liquid for monocrystalline silicon solar cells
CN102877135A (en) * 2012-09-07 2013-01-16 昆山三峰光伏科技有限公司 Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof
CN102888656A (en) * 2012-09-28 2013-01-23 绍兴拓邦电子科技有限公司 High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof
CN103290484A (en) * 2012-02-28 2013-09-11 靖江市精益化学品有限公司 Fourth generation alcohol-free additive not additionally added in suede preparation of monocrystalline silicon
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN103614778A (en) * 2013-11-25 2014-03-05 英利能源(中国)有限公司 Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
CN103938276A (en) * 2013-01-23 2014-07-23 尚德太阳能电力有限公司 Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN104576831A (en) * 2014-12-31 2015-04-29 江苏顺风光电科技有限公司 Monocrystalline silicon wafer alcohol-free texturing process and texturing additive
CN104988581A (en) * 2015-08-04 2015-10-21 绍兴拓邦电子科技有限公司 Monocrystalline silicon piece spraying and texturing additive with high boiling point

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110275222A1 (en) * 2009-12-29 2011-11-10 Zhi-Wen Sun Silicon Texture Formulations With Diol Additives And Methods of Using The Formulations
CN102315113A (en) * 2011-10-20 2012-01-11 天津理工大学 Solar-battery monocrystalline-silicon floss-making fluid with low volatility and application thereof
CN103290484A (en) * 2012-02-28 2013-09-11 靖江市精益化学品有限公司 Fourth generation alcohol-free additive not additionally added in suede preparation of monocrystalline silicon
CN102644121A (en) * 2012-04-28 2012-08-22 铜陵凯顺生物科技有限公司 Alcohol-free etching liquid for monocrystalline silicon solar cells
CN102877135A (en) * 2012-09-07 2013-01-16 昆山三峰光伏科技有限公司 Additive for alkali environment-protecting type no-alcoholic felting liquid of mono-crystal silicone chip and using method thereof
CN102888656A (en) * 2012-09-28 2013-01-23 绍兴拓邦电子科技有限公司 High-boiling point monocrystalline silicon wafer surface texturing additive and using method thereof
CN103938276A (en) * 2013-01-23 2014-07-23 尚德太阳能电力有限公司 Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN103614778A (en) * 2013-11-25 2014-03-05 英利能源(中国)有限公司 Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
CN104576831A (en) * 2014-12-31 2015-04-29 江苏顺风光电科技有限公司 Monocrystalline silicon wafer alcohol-free texturing process and texturing additive
CN104988581A (en) * 2015-08-04 2015-10-21 绍兴拓邦电子科技有限公司 Monocrystalline silicon piece spraying and texturing additive with high boiling point

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106521634A (en) * 2016-10-18 2017-03-22 湖州三峰能源科技有限公司 Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof
CN110592681A (en) * 2019-09-30 2019-12-20 四川英发太阳能科技有限公司 Texturing process for improving efficiency and yield of reworked sheets

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Application publication date: 20151209