CN106087068A - A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof - Google Patents
A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof Download PDFInfo
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- CN106087068A CN106087068A CN201610531650.8A CN201610531650A CN106087068A CN 106087068 A CN106087068 A CN 106087068A CN 201610531650 A CN201610531650 A CN 201610531650A CN 106087068 A CN106087068 A CN 106087068A
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- chitosan
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- surface texture
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 title claims abstract description 20
- 229920001661 Chitosan Polymers 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 title abstract description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 title abstract 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 18
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 11
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- -1 difluoro heptyl propyl Chemical group 0.000 claims abstract description 8
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims abstract description 7
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims abstract description 5
- 239000004141 Sodium laurylsulphate Substances 0.000 claims abstract description 5
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims abstract description 5
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims abstract description 5
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims abstract description 4
- 229930195725 Mannitol Natural products 0.000 claims abstract description 4
- 239000000594 mannitol Substances 0.000 claims abstract description 4
- 235000010355 mannitol Nutrition 0.000 claims abstract description 4
- 238000003756 stirring Methods 0.000 claims description 21
- 239000000839 emulsion Substances 0.000 claims description 7
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 238000005202 decontamination Methods 0.000 claims description 2
- 230000003588 decontaminative effect Effects 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000008187 granular material Substances 0.000 abstract description 2
- 238000004064 recycling Methods 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid, it is to be prepared by the raw material of following weight parts: chitosan 0.05 0.1, sulfamic acid 0.3 0.5, styrene 1.5 2.5,5 10% ammonium persulfate solutions 12, sodium lauryl sulphate 0.1 0.2, ten difluoro heptyl propyl trimethoxy silicanes 0.1 0.15, sodium hydroxide 35, citric acid 0.3 0.5, sodium methylene bis-naphthalene sulfonate 0.1 0.15, mannitol 0.3 0.5, water 100 120.The silicon chip texture corrosion of the present invention is moderate, Reducing thickness is little, recycling rate of waterused is high, and the suede corrosion prepared is effective, and pyramid size is uniform, and granule is less, and coverage rate is high, and response speed is fast, and quality stability is good, environmental protection.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of chitosan-sulfamic acid mono-crystalline silicon solar
Cell piece surface texture liquid and preparation method thereof.
Background technology
Along with world energy sources crisis is more serious, solar energy has become most potential alternative energy source, and solaode
It it is i.e. a kind of electronic component that solar energy is converted directly into electric energy.The main problem hindering solar battery technology to develop is
Its high manufacturing cost.At present, for reducing the cost of monocrystaline silicon solar cell and improving electricity conversion, enter
Row silicon face texturing is the most easily to realize and the most efficient method.Texture, also known as making herbs into wool, i.e. utilizes and falls into light principle, make incident illumination carry out
Multiple reflections extends its propagation path at battery surface, thus improves the solaode absorption efficiency to light.Utilize silicon
The principle of anisotropic etch, monocrystalline silicon surface can form similar pyramidal structure, effectively reduces the reflectance of sunlight.
At present, monocrystalline silicon surface texture is most commonly used that chemical corrosion method, it is common to use texture liquid be NaOH/ isopropyl
Alcohol system, but isopropanol price is high, evaporation rate is fast, and cost is high and is unfavorable for environmental protection.Patent 201010161287.8 disclosure
A kind of velvet manufacturing solution of monocrystalline silicon additive, is made up of, without isopropanol alkaline corrosion liquid and surfactant and organic acid or salt
And rapidly and efficiently, but there is the problem of reaction lack of homogeneity in it, easily cause silicon face pyramid after texture bigger than normal and
Locally the situation such as excessive erosion, need to improve further in the quality make silicon chip.
Summary of the invention
The object of the invention is contemplated to make up the defect of prior art, it is provided that a kind of response speed is fast, uniformity good, corrosion
The chitosan moderate, Reducing thickness is little, silicon chip surface quality is high-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid and
Preparation method.
The present invention is achieved by the following technical solutions:
A kind of chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid, it is by the raw material system of following weight parts
:
Chitosan 0.05-0.1, sulfamic acid 0.3-0.5, styrene 1.5-2.5,5-10% ammonium persulfate solution 1-2, dodecane
Base sodium sulfate 0.1-0.2, ten difluoro heptyl propyl trimethoxy silicane 0.1-0.15, sodium hydroxide 3-5, citric acid 0.3-0.5,
Sodium methylene bis-naphthalene sulfonate 0.1-0.15, mannitol 0.3-0.5, water 100-120.
The preparation method of a kind of chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid, including following step
Rapid:
(1) weigh raw material by weight, first sodium lauryl sulphate is added in the water of 1/3-1/2 weight and stir, then delay
Slowly add styrene and the mixture of ten difluoro heptyl propyl trimethoxy silicanes and stir 0.5-1h, being finally slowly added dropwise over cure
Acid ammonium solution also stirs 2-4h in 70-80 DEG C, cools down, obtain complex emulsions after insulation 3-5h；
(2) first chitosan, sulfamic acid and citric acid are added 60-80 DEG C of stirring 0.5-1h in the water of surplus, is subsequently adding hydrogen
Stir 1-2h under sodium oxide and sodium methylene bis-naphthalene sulfonate similarity condition, add remaining raw material stirring after cooling uniformly, obtain mixing
Liquid；
(3) it is slowly added to the complex emulsions in step (1) stir in the mixed liquor in step (2) and in 60-80 DEG C, mistake
Chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid is i.e. obtained after filtering decontamination.
The invention have the advantage that
The present invention utilizes styrene and ten difluoro heptyl propyl trimethoxy silicane emulsions polymerization synthesis complex microsphere, can be good
Be attached to silicon chip surface, play certain etching mask effect, can reduce the excessive corrosion of silicon chip, promote reaction simultaneously
Uniformity, improves matte quality, is difficult to again remain at silicon chip surface, it is ensured that the spatter property of silicon chip；Meanwhile, by chitosan, ammonia
Compounding and the potentiation of the raw materials such as base sulfonic acid so as to get silicon chip texture corrosion moderate, Reducing thickness is little, recycling rate of waterused
Height, prepared suede corrosion is effective, and pyramid size is uniform, and granule is less, and coverage rate is high, and response speed is fast, quality
Good stability, environmental protection.
Detailed description of the invention
A kind of chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid, by the component of following weight (kg)
Raw material is prepared from:
Chitosan 0.05, sulfamic acid 0.3, styrene 1.5,5% ammonium persulfate solution 1, sodium lauryl sulphate 0.1, ten difluoros
Heptyl propyl trimethoxy silicane 0.1, sodium hydroxide 3, citric acid 0.3, sodium methylene bis-naphthalene sulfonate 0.1, mannitol 0.3, water
100。
The preparation method of a kind of chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid, including following step
Rapid:
(1) weigh raw material by weight, first sodium lauryl sulphate is added in the water of 1/3 weight and stir, the most slowly add
Enter styrene and the mixture of ten difluoro heptyl propyl trimethoxy silicanes and stir 0.5h, being finally slowly added dropwise Ammonium persulfate. molten
Liquid also stirs 2h in 70 DEG C, cools down, obtain complex emulsions after insulation 3h；
(2) first chitosan, sulfamic acid and citric acid are added 60 DEG C of stirring 0.5h in the water of surplus, is subsequently adding sodium hydroxide
With stirring 1h under sodium methylene bis-naphthalene sulfonate similarity condition, add remaining raw material stirring after cooling uniformly, obtain mixed liquor；
(3) it is slowly added to the complex emulsions in step (1) stir in the mixed liquor in step (2) and in 60 DEG C, filters
Chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid is i.e. obtained after removing impurity.
Through inspection, above-mentioned texture liquid 80 DEG C, uniform small size pyramid can be prepared at silicon chip surface under the conditions of 15min
Structure, its pyramid prepared is 9.2% at 0.5-1.5 μm, the average reflectance in the range of 300-1100nm, is corroded
Amount of silicon be about 5.1%.
Claims (2)
1. chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid, it is characterised in that it is by following heavy
The raw material of amount part prepares:
Chitosan 0.05-0.1, sulfamic acid 0.3-0.5, styrene 1.5-2.5,5-10% ammonium persulfate solution 1-2, dodecane
Base sodium sulfate 0.1-0.2, ten difluoro heptyl propyl trimethoxy silicane 0.1-0.15, sodium hydroxide 3-5, citric acid 0.3-0.5,
Sodium methylene bis-naphthalene sulfonate 0.1-0.15, mannitol 0.3-0.5, water 100-120.
The system of a kind of chitosan the most according to claim 1-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid
Preparation Method, it is characterised in that comprise the following steps:
(1) weigh raw material by weight, first sodium lauryl sulphate is added in the water of 1/3-1/2 weight and stir, then delay
Slowly add styrene and the mixture of ten difluoro heptyl propyl trimethoxy silicanes and stir 0.5-1h, being finally slowly added dropwise over cure
Acid ammonium solution also stirs 2-4h in 70-80 DEG C, cools down, obtain complex emulsions after insulation 3-5h；
(2) first chitosan, sulfamic acid and citric acid are added 60-80 DEG C of stirring 0.5-1h in the water of surplus, is subsequently adding hydrogen
Stir 1-2h under sodium oxide and sodium methylene bis-naphthalene sulfonate similarity condition, add remaining raw material stirring after cooling uniformly, obtain mixing
Liquid；
(3) it is slowly added to the complex emulsions in step (1) stir in the mixed liquor in step (2) and in 60-80 DEG C, mistake
Chitosan-sulfamic acid monocrystaline silicon solar cell sheet surface texture liquid is i.e. obtained after filtering decontamination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610531650.8A CN106087068A (en) | 2016-07-08 | 2016-07-08 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610531650.8A CN106087068A (en) | 2016-07-08 | 2016-07-08 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106087068A true CN106087068A (en) | 2016-11-09 |
Family
ID=57213421
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|---|---|---|---|
| CN201610531650.8A Pending CN106087068A (en) | 2016-07-08 | 2016-07-08 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521634A (en) * | 2016-10-18 | 2017-03-22 | 湖州三峰能源科技有限公司 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
| CN108206225A (en) * | 2018-01-10 | 2018-06-26 | 温岭汉德高分子科技有限公司 | A kind of fine-hair maring using monocrystalline silicon slice agent composition and its application |
| CN108221050A (en) * | 2018-01-19 | 2018-06-29 | 温岭汉德高分子科技有限公司 | A kind of monocrystalline silicon piece with bimodal pyramid suede structure |
| CN108251894A (en) * | 2018-01-19 | 2018-07-06 | 温岭汉德高分子科技有限公司 | A kind of etching method of monocrystalline silicon piece |
| CN108264612A (en) * | 2018-02-25 | 2018-07-10 | 温岭汉德高分子科技有限公司 | A kind of preparation method of chitosan-poly- 2- acrylamide-2-methylpro panesulfonic acid sodium copolymers for monocrystalline silicon making herbs into wool |
| CN108360071A (en) * | 2018-02-25 | 2018-08-03 | 温岭汉德高分子科技有限公司 | A kind of etching method of antiradar reflectivity monocrystalline silicon piece |
| CN108360072A (en) * | 2018-02-25 | 2018-08-03 | 温岭汉德高分子科技有限公司 | A kind of monocrystalline silicon flocking additive based on the poly- 2- acrylamide-2-methylpro panesulfonic acids sodium copolymer of chitosan- |
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| CN103681958A (en) * | 2013-10-16 | 2014-03-26 | 常州时创能源科技有限公司 | Texturization method for multi-crystalline silicon wafer |
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| CN103681958A (en) * | 2013-10-16 | 2014-03-26 | 常州时创能源科技有限公司 | Texturization method for multi-crystalline silicon wafer |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106521634A (en) * | 2016-10-18 | 2017-03-22 | 湖州三峰能源科技有限公司 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
| CN108206225A (en) * | 2018-01-10 | 2018-06-26 | 温岭汉德高分子科技有限公司 | A kind of fine-hair maring using monocrystalline silicon slice agent composition and its application |
| CN108206225B (en) * | 2018-01-10 | 2019-10-29 | 温岭汉德高分子科技有限公司 | A kind of fine-hair maring using monocrystalline silicon slice agent composition and its application |
| CN108221050A (en) * | 2018-01-19 | 2018-06-29 | 温岭汉德高分子科技有限公司 | A kind of monocrystalline silicon piece with bimodal pyramid suede structure |
| CN108251894A (en) * | 2018-01-19 | 2018-07-06 | 温岭汉德高分子科技有限公司 | A kind of etching method of monocrystalline silicon piece |
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