CN103378212B - Texturing method for solar cell - Google Patents
Texturing method for solar cell Download PDFInfo
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- CN103378212B CN103378212B CN201210115765.0A CN201210115765A CN103378212B CN 103378212 B CN103378212 B CN 103378212B CN 201210115765 A CN201210115765 A CN 201210115765A CN 103378212 B CN103378212 B CN 103378212B
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- silica flour
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a texturing method for a solar cell. The texturing method comprises a step A. coating a surface of a silicon wafer with a silicon slurry which is a mixture of ganister sand, a binder and water to form a ganister sand dot matrix with a height of 3-30[Mu]m; and a step B. carrying out chemical etching on the surface, where the ganister sand dot matrix is formed, of the silicon wafer, and forming a concave-convex antireflection structure on the surface of the silicon wafer after etching to obtain a textured silicon wafer. According to the texturing method for the solar cell, texturing reflectance of the silicon wafer is below 5% with regular and uniform texturing and few surface defects, and therefore the performance of the solar cell can be effectively improved. In addition, the process is simple and mass production can be achieved.
Description
Technical field
The invention belongs to area of solar cell, more particularly to a kind of etching method of solar battery sheet.
Background technology
Solaode directly converts light energy into electric energy, and for other energy, reducing much cause energy
The intermediate link of loss, so for whole earth energy resource system, it relative to other forms Solar use method,
With highest utilization rate.Meanwhile, solaode is in use zero-emission, and environmentally safe is modern low-carbon (LC)
The most representational energy of society.
In the manufacture process of crystal silicon solar battery, in order to collect more light, area of solar cell is generally done
Method is：Cell piece is immersed in the acid etching solution or the alkalescence based on NaOH or KOH based on Fluohydric acid. and nitric acid
In corrosive liquid, on cell piece surface rough antireflective matte is formed.Wherein, acid etching solution utilizes silicon chip in cutting
The damage of formation, irregular pit shape matte is formed after corrosion on surface, and it is applicable to the making herbs into wool of polycrystalline or monocrystalline silicon piece,
But its reflectance is up to 26 ~ 30%.Alkaline corrosion liquid can form gold not of uniform size using the crystal direction of silicon in monocrystalline silicon surface
The matte of word tower structure, reflectance is 11 ~ 15%, but is not then applied to towards irregular polysilicon for crystal.
In order to capture more light, it is disclosed in recycling plasma to hit on the basis of soda acid making herbs into wool in prior art
Hit, more careful superficial makings can be formed in silicon chip surface, surface reflectivity reaches 5%.But plasma etching method is obtained
Textured surfaces defect it is very big so that the few son in the surface of battery is compound serious, and battery performance is lifted limited.Also have in prior art
It is open that mask is made using photoresist, the matte of moth ocular structure can be formed in silicon chip surface, its surface reflectivity is up to 4%, and surface is few
Son is compound also seldom, but the method complex process, high cost, and is difficult to produce in batches.
The content of the invention
The present invention solves that the matte reflectance that solar battery surface making herbs into wool in prior art is present is high, surface defect is more,
And complex process is difficult to the technical problem produced in batches.
The invention provides a kind of etching method of solar battery sheet, comprises the following steps：
A, silicon slurry is coated in silicon chip surface, form height for 3-30 μm of silica flour dot matrix；The silicon slurry is containing silicon
The mixture of powder, binding agent and water；
B, the silicon chip surface for being formed with silica flour dot matrix to surface carry out chemical attack, are formed in silicon chip surface after etching
Concavo-convex anti-reflection structure, obtains the silicon chip after making herbs into wool.
The etching method of the solar battery sheet that the present invention is provided, by being initially formed silica flour dot matrix in silicon chip surface, then
Chemical attack is carried out again, and silica flour dot matrix and the silicon chip surface not covered by silica flour dot matrix occur corrosion instead in corrosion process
Should, therefore can form concavo-convex anti-reflection structure in silicon chip surface after etching.The etching method provided using the present invention is obtained
The matte reflectance of silicon chip be less than 5%, and matte regular uniform, few surface defects can effectively improve solar battery sheet
Performance；The etching method process is simple that simultaneously present invention is provided, can be mass, and production cost is relatively low.
Description of the drawings
Fig. 1 is the structural representation that the raised dot matrix of silicon slurry is formed in silicon chip surface.
Fig. 2 is the structural representation in silicon chip surface chemical corrosion process.
Fig. 3 is the suede structure schematic diagram after the completion of silicon chip surface chemical attack.
Specific embodiment
In order that technical problem solved by the invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Drawings and Examples, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
The invention provides a kind of etching method of solar battery sheet, comprises the following steps：
A, silicon slurry is coated in silicon chip surface, form height for 3-30 μm of silica flour dot matrix；The silicon slurry is containing silicon
The mixture of powder, binding agent and water；
B, the silicon chip surface for being formed with silica flour dot matrix to surface carry out chemical attack, are formed in silicon chip surface after etching
Concavo-convex anti-reflection structure, obtains the silicon chip after making herbs into wool.
The etching method of the solar battery sheet that the present invention is provided, by being initially formed silica flour dot matrix in silicon chip surface, then
Again by chemical attack, in corrosion process there is corrosion instead in silica flour dot matrix and the silicon chip surface not covered by silica flour dot matrix simultaneously
Should, it is highly inconsistent due to what is be corroded, therefore can form rough suede structure in silicon chip surface after etching.
Specifically, in the present invention, the silicon slurry is the mixture containing silica flour, binding agent and water.Wherein, water is slurry
Solvent, makes silica flour dispersed with binding agent.In the silicon slurry, in step A, the matter of silica flour and binding agent in the silicon slurry
Amount is than being 1：0.025-0.3.
In the present invention, the silica flour is various silica flours commonly used in the prior art, and the present invention is not particularly limited.It is preferred that feelings
Under condition, the particle diameter of the silica flour is 0.5-15 μm, more preferably 1-5 μm.
The binding agent is the various binding agents that can be removed by chemical attack common in the art, therefore is subsequently being changed
In learning corrosion process, the silica flour in silica flour dot matrix reacts with corrosive liquid simultaneously with binding agent, therefore corrodes in the present invention
Into after without the need for cleaning to silicon chip surface.
In the present invention, there is good caking property with silicon chip before complete erosion removal for silica flour is effectively ensured, preferably
In the case of, the binding agent is preferably less than the binding agent of silica flour chemical attack reaction rate using chemical attack reaction rate.More
Under preferable case, containing inorganic binder and organic binder bond in the binding agent.Wherein, the inorganic binder is selected from silicon
One or more in glue, orthosilicic acid or sodium silicate.The organic binder bond is selected from carboxymethyl cellulose or ethyl cellulose.
In the case of more preferably, the mass ratio of silica flour, inorganic binder and organic adhesive is 1：0.02-0.2：0.005-
0.1, more preferably 1：0.05-0.1：0.05-0.02.
In the present invention, the concrete arrangement of the silica flour dot matrix can suitably be selected according to the requirement of matte.The present invention's
Inventor has found that the spot diameter of the silica flour dot matrix is 1-20 μm, chemical attack when dot spacing is 1-15 μm by many experiments
The reflectance of the matte for obtaining afterwards is lower, and matte is more regular uniform, there's almost no surface defect, the solar battery sheet for obtaining
With higher performance.
The method for coating silicon slurry in silicon chip surface can adopt the various methods such as spraying common in the art, printing,
The present invention is not particularly limited.
It is known to those skilled in the art the step of the chemical attack in step B in the present invention, i.e., using corrosion
Liquid is processed silicon chip surface, and it is anti-that the silicon chip contacted with corrosive liquid or silica flour and binding agent occur chemistry with corrosive liquid
Should, be decomposed removal.The time of chemical attack is 1-5min.
In the present invention, the corrosive liquid that the chemical attack is adopted can be acid etching solution, alternatively alkaline corrosion liquid, this
Invention is without particular provisions.
Wherein, the acid etching solution be selected from the oxidizing acid containing Fluohydric acid., wherein the oxidizing acid selected from nitric acid,
Nitrous acid, nitrite, dichromic acid, perchloric acid or hypochlorous acid.Oxidizing acid in the acid etching solution is used to corrode silicon
Silicon oxide is converted into, and silicon oxide then continues to react the removal that is corroded with Fluohydric acid..The alkaline corrosion liquid is containing basic species
The solution of matter, wherein the alkaline matter can be potassium hydroxide, sodium hydroxide, but is not limited to this.
The etching method of the solar battery sheet that the present invention is provided, it is adaptable to various crystal-silicon solar cells, the i.e. present invention
Described in silicon chip may be selected from but be not limited to polysilicon chip, monocrystalline silicon piece and quasi-monocrystalline silicon.
The reflectance of silicon wafer suede that the etching method of present invention offer is obtained is adopted for less than 5%, and matte rule is equal
Even, few surface defects can effectively improve the performance of solar battery sheet；The etching method process is simple that simultaneously present invention is provided,
Can be mass, production cost is relatively low.
With reference to embodiments explanation is further explained to the present invention.Embodiment is that raw material leads to employed in comparative example
Cross and be commercially available, the present invention is not particularly limited.
Embodiment 1
（1）50g sodium silicate and 30g carboxymethyl celluloses are added in 2kg water, is slowly stirred to both and is completely dispersed；So
The silica flour 1kg that particle diameter is 2 μm is added afterwards, is continued stirring 5h and is uniformly dispersed to silica flour, obtain silicon slurry.
（2）The above-mentioned mixture slurry containing silica flour is utilized into method for printing screen, is 156*156mm in commercially available specification2's
Polysilicon chip surface printing step（1）Obtained silicon slurry, forms that spot diameter is 4 μm, dot spacing is 2 μm, is highly 10 μm
Silica flour dot matrix, and 80 DEG C in chain type baking box at dry.
（3）By step（2）There is the silicon chip of silica flour dot matrix to be put into chemistry in the acid etching solution that temperature is 8 DEG C to obtain surface
Corrosion 4min, acid etching solution be containing volume ratio be HF：HNO3：H2O=1：4：1 mixed system, obtains the silicon that making herbs into wool is completed
Piece S1.
Embodiment 2
（1）20g orthosilicic acid and 5g ethyl celluloses are added in 1kg water, is slowly stirred to both and is completely dispersed；Then plus
Enter the silica flour 1kg that particle diameter is 15 μm, continue stirring 5h and be uniformly dispersed to silica flour, obtain silicon slurry.
（2）The above-mentioned mixture slurry containing silica flour is utilized into method for printing screen, is 156*156mm in commercially available specification2's
Polysilicon chip surface printing step（1）Obtained silicon slurry, forms that spot diameter is 20 μm, dot spacing is 5 μm, is highly 30 μm
Silica flour dot matrix, and 80 DEG C in chain type baking box at dry.
（3）By step（2）There is the silicon chip of silica flour dot matrix to be put into change in the alkaline corrosion liquid that temperature is 50 DEG C to obtain surface
Corrosion 1min is learned, alkaline corrosion liquid is the KOH solution of 8wt%, obtains the silicon chip S2 that making herbs into wool is completed.
Embodiment 3
（1）200g silica gel and 100g ethyl celluloses are added in 5kg water, is slowly stirred to both and is completely dispersed；Then
The silica flour 1kg that particle diameter is 1 μm is added, is continued stirring 5h and is uniformly dispersed to silica flour, obtain silicon slurry.
（2）The above-mentioned mixture slurry containing silica flour is utilized into method for printing screen, is 156*156mm in commercially available specification2's
Polysilicon chip surface printing step（1）Obtained silicon slurry, formed spot diameter be 1 μm, dot spacing be 1 μm, the silicon highly for 3 μm
Powder dot matrix, and 80 DEG C in chain type baking box at dry.
（3）By step（2）There is the silicon chip of silica flour dot matrix to be put into chemistry in the acid etching solution that temperature is 8 DEG C to obtain surface
Corrosion 4min, acid etching solution be containing volume ratio be HF：HNO3：H2O=1：4：1 mixed system, obtains the silicon that making herbs into wool is completed
Piece S3.
Embodiment 4
（1）70g silica gel and 10g ethyl celluloses are added in 5kg water, is slowly stirred to both and is completely dispersed；Then plus
Enter the silica flour 1kg that particle diameter is 0.5 μm, continue stirring 5h and be uniformly dispersed to silica flour, obtain silicon slurry.
（2）The above-mentioned mixture slurry containing silica flour is utilized into method for printing screen, is 156*156mm in commercially available specification2's
Polysilicon chip surface printing step（1）Obtained silicon slurry, forms that spot diameter is 5 μm, dot spacing is 15 μm, is highly 10 μm
Silica flour dot matrix, and 80 DEG C in chain type baking box at dry.
（3）By step（2）There is the silicon chip of silica flour dot matrix to be put into chemistry in the acid etching solution that temperature is 8 DEG C to obtain surface
Corrosion 3min, acid etching solution be containing volume ratio be HF：HNO3：H2O=1：4：1 mixed system, obtains the silicon that making herbs into wool is completed
Piece S4.
Comparative example 1
It is directly 156*156mm by commercially available specification2Polysilicon chip to be put in the acid etching solution that temperature is 8 DEG C chemistry rotten
Erosion 1.5min, acid etching solution be containing volume ratio be HF：HNO3：H2O=1：4：1 mixed system, obtains the silicon that making herbs into wool is completed
Piece DS1.
Comparative example 2
Directly just commercially available specification is 156*156mm2Polysilicon chip be put in the alkaline corrosion liquid that temperature is 50 DEG C change
Corrosion 1min is learned, alkaline corrosion liquid is the KOH solution of 8wt%, obtains the silicon chip DS2 that making herbs into wool is completed.
Performance test：
（1）Reflectance test：
Silicon chip S1-S4 and DS1-DS2 after the making herbs into wool that embodiment 1-4 and comparative example 1-2 are obtained, is put into spectrophotometer
Reflectance of the middle test wavelength in the incident ray of 400-1100nm.
（2）Battery performance test：
Silicon chip S1-S4 and DS1-DS2 after the making herbs into wool that embodiment 1-4 and comparative example 1-2 are obtained, be diffused respectively,
Side, plated film, printing and Fast Sintering are carved, solaode S10-S40 and DS10-DS20 is obtained.Each solaode is placed
In 1000w/m2Intensity of illumination in, test battery short circuit electric current, peak power, series resistance, transformation efficiency.
Concrete test result is as shown in table 1.
Table 1
。
The matte reflectance for adopting the etching method of present invention offer to obtain is can be seen that from the test result of upper table 1 low
In 5%, and regular uniform, matte defect are few, therefore are prepared into its battery performance after solaode and are substantially better than prior art.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of etching method of solar battery sheet, it is characterised in that comprise the following steps：
A, silicon slurry is coated in silicon chip surface, form height for 3-30 μm of silica flour dot matrix；The silicon slurry is containing silica flour, glues
Knot agent and the mixture of water, the particle diameter of the silica flour is 0.5-15 μm, and the spot diameter of silica flour dot matrix dot matrix is 1-20 μm, dot spacing
For 1-15 μm；
B, the silicon chip surface for being formed with silica flour dot matrix to surface carry out chemical attack, form concavo-convex in silicon chip surface after etching
Anti-reflection structure, obtains the silicon chip after making herbs into wool.
2. etching method according to claim 1, it is characterised in that in step A, silica flour and binding agent in the silicon slurry
Mass ratio be 1：0.025-0.3.
3. etching method according to claim 1 and 2, it is characterised in that in the binding agent containing inorganic binder and
Organic binder bond；The inorganic binder is selected from one or more in silica gel, orthosilicic acid or sodium silicate, the organic binder bond
Selected from carboxymethyl cellulose or ethyl cellulose.
4. etching method according to claim 3, it is characterised in that the matter of silica flour, inorganic binder and organic adhesive
Amount is than being 1：0.02-0.2：0.005-0.1.
5. etching method according to claim 4, it is characterised in that the matter of silica flour, inorganic binder and organic adhesive
Amount is than being 1：0.05-0.1：0.02-0.05.
6. etching method according to claim 1, it is characterised in that the particle diameter of the silica flour is 1-5 μm.
7. etching method according to claim 1, it is characterised in that in step B, the corrosion that the chemical attack is adopted
Liquid is acid etching solution or alkaline corrosion liquid.
8. etching method according to claim 7, it is characterised in that the acid etching solution is selected from the oxygen containing Fluohydric acid.
The property changed acid, the oxidizing acid is selected from nitric acid, nitrous acid, dichromic acid, perchloric acid or hypochlorous acid；The alkaline corrosion liquid is selected from and contains
There is the solution of potassium hydroxide, sodium hydroxide.
9. the etching method according to claim 1 or 7, it is characterised in that in step B, the time of chemical attack is 1-
5min。
10. etching method according to claim 1, it is characterised in that the silicon chip is polysilicon chip, monocrystalline silicon piece or standard
Monocrystalline silicon piece.
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| CN103606395B (en) * | 2013-11-08 | 2016-02-10 | 四川大学 | Containing the silicon slurry of multiple hydrogen bonding Supramolecular self assembly system and the application in solar cell |
| CN103643304A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Method for activating polysilicon texturing liquid medicine |
| CN103865541B (en) * | 2014-03-07 | 2015-06-24 | 常州天合光能有限公司 | Etching size applicable to solar cells, and preparation method and application method of etching size |
| CN104073883A (en) * | 2014-06-11 | 2014-10-01 | 邬时伟 | Texturing process for polycrystalline silicon solar cell slice |
| CN106229369A (en) * | 2016-08-31 | 2016-12-14 | 上海浦宇铜艺装饰制品有限公司 | A kind of processing technology of the photovoltaic brazing band having moulding fancy |
| CN108346674B (en) * | 2018-01-30 | 2019-01-18 | 武汉新芯集成电路制造有限公司 | Preparation method, silicon wafer and the imaging sensor of semiconductor wafers |
| CN114460755A (en) * | 2020-11-09 | 2022-05-10 | 西安立芯光电科技有限公司 | Semiconductor laser dodging technology and module |
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| CN101800264B (en) * | 2010-02-20 | 2012-01-18 | 山东力诺太阳能电力股份有限公司 | Process for texturing crystalline silicon solar cell by dry etching |
| CN101789467B (en) * | 2010-02-20 | 2012-06-13 | 山东力诺太阳能电力股份有限公司 | Polycrystalline silicon solar energy cell wet-method texturing manufacturing process |
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