CN107170846A - The surface matte preparation method of monocrystaline silicon solar cell - Google Patents
The surface matte preparation method of monocrystaline silicon solar cell Download PDFInfo
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- CN107170846A CN107170846A CN201710411159.6A CN201710411159A CN107170846A CN 107170846 A CN107170846 A CN 107170846A CN 201710411159 A CN201710411159 A CN 201710411159A CN 107170846 A CN107170846 A CN 107170846A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 31
- 235000008216 herbs Nutrition 0.000 claims abstract description 26
- 210000002268 wool Anatomy 0.000 claims abstract description 26
- 239000003518 caustics Substances 0.000 claims abstract description 20
- 230000007547 defect Effects 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 230000002000 scavenging effect Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000004570 mortar (masonry) Substances 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000003513 alkali Substances 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 4
- 229910021645 metal ion Inorganic materials 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 17
- 230000006872 improvement Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 206010054949 Metaplasia Diseases 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000015689 metaplastic ossification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of surface matte preparation method of monocrystaline silicon solar cell, the preparation method comprises the following steps successively：S1, by gas chemistry caustic solution monocrystalline silicon sheet surface introduce micro-nano defect；S2, using alkaline etching process for etching monocrystalline silicon sheet surface formation pyramid structure；S3, using acid solution above-mentioned silicon chip is cleaned, remove monocrystalline silicon sheet surface impurity residual.The present invention first passes through the defect raising point of gas chemistry caustic solution formation micro-nano size before alkaline etching making herbs into wool step, preferable pyramid matte can quickly be obtained and remove surface cutting stria by carrying out conventional alkali making herbs into wool again, and the pyramid matte prepared has excellent sunken optical property；The alkaline etching making herbs into wool time is greatly reduced in actual process, the production efficiency of monocrystaline silicon solar cell is improved；Metal ion need not be introduced in gas chemistry caustic solution, it is to avoid because cleaning does not thoroughly cause the risk of metal impurity con monocrystalline silicon piece, substantially increase matte quality.
Description
Technical field
The present invention relates to technical field of solar batteries, the surface matte of more particularly to a kind of monocrystaline silicon solar cell
Preparation method.
Background technology
Photovoltaic generation is the important composition of new energy, is developed rapidly in recent years.Current commercialized solar cell
In product, the market share of crystalline silicon (monocrystalline and polycrystalline) solar cell is maximum, is always maintained at the occupation rate of market close to ninety percent.
At present, in the production technology of crystal-silicon solar cell, the purpose of matte technique is to reduce the surface of solar cell
Reflectivity, so as to improve the photoelectric transformation efficiency of solar cell.In order to obtain the matte knot of excellent performance on crystal silicon chip surface
Structure, photovoltaic industry has attempted many methods, and such as mechanical carving groove method, laser ablation method, reactive ion etching method (RIE), chemistry are rotten
Erosion method (i.e. wet etching) etc..Wherein, based on alkali lye monocrystalline silicon chemical attack and the multi crystal silicon chemical corrosion based on acid solution are
The technology generally used in current crystal silicon battery process for etching, suede structure is made surface after battery and reflected typically in micron order
Rate is still higher in general.
Its surface reflectivity, the published China of the applicant can be further reduced in silicon chip surface formation nanostructured
A kind of preparation method of surface of crystalline silicon nanometer suede has been disclosed in patent of invention 201310127230.X, and it mainly includes as follows
Step：
(1) polysilicon silicon chip cleaned, corrode making herbs into wool, form micron order matte；
(2) silicon chip is put into the solution containing metal ion and soaked, silicon chip surface is coated layer of metal nano particle；
(3) with the first chemical corrosion liquid corrosion of silicon surface, nanometer-scale texture is formed；
(4) above-mentioned silicon chip is cleaned with the first cleaning fluid, the second cleaning fluid, deionized water respectively, goes metallic particles；
(5) above-mentioned silicon chip is put into progress micro-structural amendment etching in the second chemical corrosion liquid.
The reflectivity of polysilicon chip surface matte can be reduced to 12%~20% by the above method, but the above method is directed to
Polysilicon chip, it directly carries out corrosion making herbs into wool to polysilicon chip, then matte is modified using a variety of chemical corrosion liquids
Etching, though preferable matte can be formed to improve the conversion efficiency of cell piece, the complex steps in actual process, process for etching
Time is longer, improves the manufacturing cost of solar cell.
Therefore, for above-mentioned technical problem, it is necessary to provide a kind of surface matte preparation side of monocrystaline silicon solar cell
Method.
The content of the invention
In view of this, it is an object of the invention to provide a kind of surface matte preparation method of monocrystaline silicon solar cell.
To achieve these goals, technical scheme provided in an embodiment of the present invention is as follows：
A kind of surface matte preparation method of monocrystaline silicon solar cell, the preparation method comprises the following steps successively：
S1, by gas chemistry caustic solution monocrystalline silicon sheet surface introduce micro-nano defect；
S2, using alkaline etching process for etching monocrystalline silicon sheet surface formation pyramid structure；
S3, using acid solution above-mentioned silicon chip is cleaned, remove monocrystalline silicon sheet surface impurity residual.
As a further improvement on the present invention, gas chemistry caustic solution is specially in the step S1：
Monocrystalline silicon piece is put into the atmosphere containing corrosive gas, corrodes monocrystalline silicon sheet surface to introduce micro-nano defect,
The corrosive gas is the one or more in the mixed gas of F2 or Cl2 or HF and oxidizing gas, the oxidisability
Gas is the one or more in O2, O3, N2O, NO, NO2.
As a further improvement on the present invention, in the step S1,
When corrosive gas is F2, F2 concentration range is 0.1~10%；
When corrosive gas is Cl2, Cl2 concentration range is 0.1~10%；
When corrosive gas is HF and oxidizing gas mixed gas, the volume ratio of HF and oxidizing gas is not small
In 1:10, HF and oxidizing gas total concentration scope be 0.1~20%.
As a further improvement on the present invention, in the step S1 reaction temperature of gas chemistry caustic solution for 20~
100 DEG C, the reaction time is 0.5~5min.
As a further improvement on the present invention, alkaline etching process for etching is specially in the step S2：
Monocrystalline silicon piece is put into the NaOH solution or KOH solution that concentration is 0.5~5%, formed in monocrystalline silicon sheet surface
Pyramid structure.
As a further improvement on the present invention, the reaction temperature of alkaline etching process for etching is 5~85 DEG C in the step S2,
The alkaline etching making herbs into wool time is 5~10min, and the size of pyramid structure is 1~5 μm.
As a further improvement on the present invention, the step S3 is specially：
Monocrystalline silicon piece is put into cleaning solution and cleaned, scavenging period is 1~5min, removes monocrystalline silicon sheet surface impurity residual
Stay.
As a further improvement on the present invention, the acid solution is HF or HF/HCl；Wherein,
When acid solution is HF, HF concentration is 1~5%, and cleaning temperature is 15~45 DEG C, 0.5~5min of scavenging period；
When acid solution is HF/HCl, HF and HCl concentration are respectively 1~5% and 1~5%, and cleaning temperature is 15~45
DEG C, 0.5~5min of scavenging period.
As a further improvement on the present invention, the monocrystalline silicon piece is diamond wire singulation crystal silicon chip or mortar line singulation crystal silicon
Piece.
The beneficial effects of the invention are as follows：
The defect raising point of gas chemistry caustic solution formation micro-nano size is first passed through before alkaline etching making herbs into wool step, then is entered
Row routine alkali making herbs into wool can quickly obtain preferable pyramid matte and remove surface cutting stria, and the pyramid matte prepared
With excellent sunken optical property；
The alkaline etching making herbs into wool time is greatly reduced in actual process, the production efficiency of monocrystaline silicon solar cell is improved；
Compared to metal catalytic chemical corrosion method, metal ion need not be introduced in gas chemistry caustic solution, it is to avoid because
Cleaning does not thoroughly cause the risk of metal impurity con monocrystalline silicon piece, substantially increases matte quality；
Matte preparation method is simple and easy to apply, with existing industrialized producing technology compatibility preferably, can be with Rapid transplant to work
In the production of industry metaplasia, suitable for popularization and application.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the particular flow sheet of the preparation method of monocrystaline silicon solar cell surface suede structure in the present invention；
Fig. 2 is the monocrystalline silicon sheet surface SEM electron microscopes after gaseous corrosion in one embodiment of the present invention；
Fig. 3 is the monocrystalline silicon sheet surface SEM electron microscopes after alkaline etching making herbs into wool in one embodiment of the present invention.
Embodiment
In order that those skilled in the art more fully understand the technical scheme in the present invention, below in conjunction with of the invention real
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described implementation
Example only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under the premise of creative work is not made, should all belong to protection of the present invention
Scope.
Join shown in Fig. 1, the invention discloses a kind of surface matte preparation method of monocrystaline silicon solar cell, the preparation side
Method comprises the following steps successively：
S1, by gas chemistry caustic solution monocrystalline silicon sheet surface introduce micro-nano defect；
S2, using alkaline etching process for etching monocrystalline silicon sheet surface formation pyramid structure；
S3, using acid solution above-mentioned silicon chip is cleaned, remove monocrystalline silicon sheet surface impurity residual.
In the step S1 of the present invention, gas chemistry caustic solution is specially：
Monocrystalline silicon piece is put into the atmosphere containing corrosive gas, corrodes monocrystalline silicon sheet surface to introduce micro-nano defect,
Wherein, corrosive gas is the one or more in the mixed gas of F2 or Cl2 or HF and oxidizing gas, oxidizing gas
For the one or more in O2, O3, N2O, NO, NO2.
Preferably, when corrosive gas is F2, F2 concentration range is 0.1~10%；
Preferably, when corrosive gas is Cl2, Cl2 concentration range is 0.1~10%；
Preferably, when corrosive gas is HF and oxidizing gas (one or more in O2, O3, N2O, NO, NO2)
During mixed gas, the volume ratio of HF and oxidizing gas (one or more in O2, O3, N2O, NO, NO2) is not less than 1:
10, HF and oxidizing gas total concentration scope be 0.1~20%.
Preferably, the reaction temperature of gas chemistry caustic solution is 20~100 DEG C, and the reaction time is 0.5~5min.
First by the defect raising point of gas chemistry caustic solution formation micro-nano size in the present invention, certainly, at other
In embodiment, in order to improve the quality of micro-nano defect, first monocrystalline silicon piece can also be polished using aqueous slkali, Ran Houzai
By gas chemistry caustic solution in monocrystalline silicon sheet surface formation micro-nano defect.
In the step S2 of the present invention, alkaline etching process for etching is specially：
Monocrystalline silicon piece is put into the NaOH solution or KOH solution that concentration is 0.5~5%, formed in monocrystalline silicon sheet surface
Pyramid structure.
Preferably, in step S2 alkaline etching process for etching reaction temperature be 5~85 DEG C, the alkaline etching making herbs into wool time be 5~
10min, the size of pyramid structure is 1~5 μm.
In the step S3 of the present invention, acid solution cleaning is specially：
Monocrystalline silicon piece is put into cleaning solution and cleaned, scavenging period is 1~5min, removes monocrystalline silicon sheet surface impurity residual
Stay.
Preferably, acid solution is HF or HF/HCl；Wherein,
When acid solution is HF, HF concentration is 1~5%, and cleaning temperature is 15~45 DEG C, 0.5~5min of scavenging period；
When acid solution is HF/HCl, HF and HCl concentration are respectively 1~5% and 1~5%, and cleaning temperature is 15~45
DEG C, 0.5~5min of scavenging period.
Wherein, the monocrystalline silicon piece referred in the present invention can be diamond wire singulation crystal silicon chip or mortar line singulation crystal silicon chip.
Because diamond wire singulation crystal silicon chip or mortar line singulation crystal silicon chip have shallow damage layer and parallel stria, lead
The not perishable pyramid for providing excellent sunken optical property of conventional alkali making herbs into wool is caused, the present invention is directed to monocrystalline silicon piece, in alkaline etching system
By the defect raising point of gas chemistry caustic solution formation micro-nano size before suede, so as to be conducive to quick acquisition preferably gold
Word tower suede structure, and can effectively remove surface cutting stria.
Compared with existing alkaline etching making herbs into wool, conventional alkaline etching making herbs into wool step need to generally spend 20~30min, the gold of formation
Word tower structure is larger, about 3-6 μm；It is one and the method for the present invention is initially formed micro-nano defect before alkaline etching making herbs into wool step
Brand-new method is planted, and the time control that alkaline etching making herbs into wool step can be spent by this method is in 5~10min, the gold of formation
Word tower structure is smaller, and about 1~5 μm, the step greatly reduces the making herbs into wool time in actual process, improves monocrystalline silicon too
The production efficiency of positive energy battery, achieves unexpected effect.
Meanwhile, the reflectivity of suede structure can reach 8~12% on monocrystalline silicon piece of the present invention, and more existing alkaline etching is obtained
Suede structure reflectivity (about 10~20%) it is more superior.
In the preferred embodiment of the present invention, the surface matte preparation method of monocrystaline silicon solar cell specifically include with
Lower step：
1) the diamond wire singulation crystal silicon chip that thickness is 180 ± 10 μm, size is 156mm × 156mm is put into containing F2's
In gaseous corrosion atmosphere, F2 concentration is 3%, and reaction temperature is 100 DEG C, and the reaction time is 3min, in monocrystalline silicon sheet surface shape
Into micro-nano defect, from Figure 2 it can be seen that monocrystalline silicon sheet surface has some micro-nano defects after gas chemistry caustic solution, as
The defect raising point of follow-up making herbs into wool.
2) monocrystalline silicon piece is put into the NaOH solution that concentration is 2% and carries out alkaline etching making herbs into wool, reaction temperature is 80 DEG C, instead
It is 8min between seasonable, in monocrystalline silicon sheet surface formation pyramid structure.
3) monocrystalline silicon piece after alkali making herbs into wool is put into 5% HF solution and cleaned, scavenging period is 3min, and cleaning temperature is
25 DEG C, the surface matte of monocrystalline silicon piece is modified and the various residue impurities in surface are removed.
It is illustrated in figure 3 the monocrystalline silicon sheet surface SEM electron microscopes after 8min alkaline etching making herbs into wool, it is found that monocrystalline
Silicon chip surface pyramid suede structure is ideal, and the size of pyramid structure is 1~5 μm.After tested, suede on the monocrystalline silicon piece
The reflectivity of face structure can reach 10%, and the suede structure (about 12%) that more conventional alkaline etching making herbs into wool is obtained is even more ideal.
As can be seen from the above technical solutions, compared with prior art, the present invention has the advantages that：
The defect raising point of gas chemistry caustic solution formation micro-nano size is first passed through before alkaline etching making herbs into wool step, then is entered
Row routine alkali making herbs into wool can quickly obtain preferable pyramid matte and remove surface cutting stria, and the pyramid matte prepared
With excellent sunken optical property；
The alkaline etching making herbs into wool time is greatly reduced in actual process, the production efficiency of monocrystaline silicon solar cell is improved；
Compared to metal catalytic chemical corrosion method, metal ion need not be introduced in gas chemistry caustic solution, it is to avoid because
Cleaning does not thoroughly cause the risk of metal impurity con monocrystalline silicon piece, substantially increases matte quality；
Matte preparation method is simple and easy to apply, with existing industrialized producing technology compatibility preferably, can be with Rapid transplant to work
In the production of industry metaplasia, suitable for popularization and application.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as to the claim involved by limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art should
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It may be appreciated other embodiment.
Claims (9)
1. the surface matte preparation method of a kind of monocrystaline silicon solar cell, it is characterised in that the preparation method includes successively
Following steps：
S1, by gas chemistry caustic solution monocrystalline silicon sheet surface introduce micro-nano defect；
S2, using alkaline etching process for etching monocrystalline silicon sheet surface formation pyramid structure；
S3, using acid solution above-mentioned silicon chip is cleaned, remove monocrystalline silicon sheet surface impurity residual.
2. the surface matte preparation method of monocrystaline silicon solar cell according to claim 1, it is characterised in that the step
Gas chemistry caustic solution is specially in rapid S1：
Monocrystalline silicon piece is put into the atmosphere containing corrosive gas, corrosion monocrystalline silicon sheet surface is described to introduce micro-nano defect
Corrosive gas is the one or more in the mixed gas of F2 or Cl2 or HF and oxidizing gas, the oxidizing gas
For the one or more in O2, O3, N2O, NO, NO2.
3. the surface matte preparation method of monocrystaline silicon solar cell according to claim 2, it is characterised in that the step
In rapid S1,
When corrosive gas is F2, F2 concentration range is 0.1~10%；
When corrosive gas is Cl2, Cl2 concentration range is 0.1~10%；
When corrosive gas is HF and oxidizing gas mixed gas, the volume ratio of HF and oxidizing gas is not less than 1:
10, HF and oxidizing gas total concentration scope be 0.1~20%.
4. the surface matte preparation method of monocrystaline silicon solar cell according to claim 2, it is characterised in that the step
The reaction temperature of gas chemistry caustic solution is 20~100 DEG C in rapid S1, and the reaction time is 0.5~5min.
5. the surface matte preparation method of monocrystaline silicon solar cell according to claim 1, it is characterised in that the step
Alkaline etching process for etching is specially in rapid S2：
Monocrystalline silicon piece is put into the NaOH solution or KOH solution that concentration is 0.5~5%, golden word is formed in monocrystalline silicon sheet surface
Tower structure.
6. the surface matte preparation method of monocrystaline silicon solar cell according to claim 5, it is characterised in that the step
The reaction temperature of alkaline etching process for etching is 5~85 DEG C in rapid S2, and the alkaline etching making herbs into wool time is 5~10min, pyramid structure
Size is 1~5 μm.
7. the surface matte preparation method of monocrystaline silicon solar cell according to claim 1, it is characterised in that the step
Suddenly S3 is specially：
Monocrystalline silicon piece is put into cleaning solution and cleaned, scavenging period is 1~5min, monocrystalline silicon sheet surface impurity residual is removed.
8. the surface matte preparation method of monocrystaline silicon solar cell according to claim 6, it is characterised in that the acid
Solution is HF or HF/HCl；Wherein,
When acid solution is HF, HF concentration is 1~5%, and cleaning temperature is 15~45 DEG C, 0.5~5min of scavenging period；
When acid solution is HF/HCl, HF and HCl concentration are respectively 1~5% and 1~5%, and cleaning temperature is 15~45 DEG C,
0.5~5min of scavenging period.
9. the surface matte preparation method of monocrystaline silicon solar cell according to claim 1, it is characterised in that the list
Crystal silicon chip is diamond wire singulation crystal silicon chip or mortar line singulation crystal silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710411159.6A CN107170846A (en) | 2017-06-02 | 2017-06-02 | The surface matte preparation method of monocrystaline silicon solar cell |
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| CN201710411159.6A CN107170846A (en) | 2017-06-02 | 2017-06-02 | The surface matte preparation method of monocrystaline silicon solar cell |
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Cited By (2)
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| CN110491971A (en) * | 2019-08-22 | 2019-11-22 | 东方环晟光伏（江苏）有限公司 | A kind of large scale imbrication battery process for etching |
| CN113539793A (en) * | 2021-07-15 | 2021-10-22 | 江苏晟驰微电子有限公司 | Surface treatment process before feeding of power chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491971A (en) * | 2019-08-22 | 2019-11-22 | 东方环晟光伏（江苏）有限公司 | A kind of large scale imbrication battery process for etching |
| CN113539793A (en) * | 2021-07-15 | 2021-10-22 | 江苏晟驰微电子有限公司 | Surface treatment process before feeding of power chip |
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