CN106684174A - Surface texturing method of polycrystalline silicon chips - Google Patents
Surface texturing method of polycrystalline silicon chips Download PDFInfo
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- CN106684174A CN106684174A CN201611199319.7A CN201611199319A CN106684174A CN 106684174 A CN106684174 A CN 106684174A CN 201611199319 A CN201611199319 A CN 201611199319A CN 106684174 A CN106684174 A CN 106684174A
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- polysilicon chip
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- etchant solution
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title abstract description 21
- 230000007797 corrosion Effects 0.000 claims abstract description 37
- 238000005260 corrosion Methods 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000005520 cutting process Methods 0.000 claims abstract description 23
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 4
- 239000010432 diamond Substances 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims description 52
- 229910017604 nitric acid Inorganic materials 0.000 claims description 48
- 239000000243 solution Substances 0.000 claims description 36
- 210000002268 wool Anatomy 0.000 claims description 27
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 17
- 229910021641 deionized water Inorganic materials 0.000 claims description 17
- 230000035484 reaction time Effects 0.000 claims description 13
- 239000011259 mixed solution Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000003595 mist Substances 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 claims description 8
- 238000000889 atomisation Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 239000010970 precious metal Substances 0.000 abstract 2
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000010808 liquid waste Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a surface texturing method of polycrystalline silicon chips, which has a first corrosion and a second corrosion sequentially to achieve the texturization of the polycrystalline silicon chips that have been cleaned. In the first corrosion, immerse the diamond wire cutting polycrystalline silicon chips after cleaning into the first etchant solution to corrode. In the second corrosion, put the polycrystalline silicon chips that have been corroded in the first corrosion into the fog, wherein the fog is formed by the pulverization of the second corrosion. The method of the invention is simple and low cost, and the invention does not need to utilize any precious metals and large equipment, and the surface texturing method can achieve the texturization on the surface of polycrystalline silicon chips so that the diamond wire cutting surface reflectance of silicon solar cell can be reduced below 10%. The surface texturing method is simple and low cost, and does not need to utilize any precious metals and large equipment, and has a strong commercial application.
Description
Technical field
The invention belongs to technical field of solar cell manufacturing, and in particular to a kind of surface wool manufacturing method of polysilicon chip.
Background technology
At present, crystalline silicon is most important solar cell material, occupies more than 90% market share.Crystalline silicon is main
It is divided into monocrystalline silicon and polysilicon.Because the cost of polysilicon is lower, its market share surmounts monocrystalline silicon and accounts for photovoltaic market always
It is leading.For polycrystalline silicon solar cell, reduces cost is current study hotspot simultaneously how to improve battery efficiency.
Matte is prepared on silicon chip can effectively reduce light reflectivity, increase light absorbs, so as to improve the effect of solar cell
Rate.Buddha's warrior attendant wire cutting polysilicon chip has the advantages that cutting speed is fast, the loss of high precision, raw material is small, but prepared by its matte
It is problem of the pendulum in face of numerous researchers.Different from the polysilicon chip of mortar wire cutting, Buddha's warrior attendant wire cutting polysilicon chip is difficult to
Preferable matte is prepared using traditional sour process for etching.Using dry etchings such as reactive ion etching (RIE), laser groovings
Although method can prepare the relatively low matte of more uniform, reflectivity, the cost of these methods is very high and apparatus expensive, silicon
Piece surface can also form more serious mechanical damage.Matte is prepared using metal auxiliary catalysis etch, its is relatively costly, together
When, the liquid waste processing containing noble metal is also the problem that should be noted, industrialized production is more difficult.
Thus, how the inexpensive matte for preparing the preferable Buddha's warrior attendant wire cutting polysilicon chip of anti-reflective effect is current
Difficult point.
The content of the invention
In view of the shortcomings of the prior art, the invention provides a kind of surface wool manufacturing method of polysilicon chip, the method is applicable
In matte is prepared on the surface of Buddha's warrior attendant wire cutting polysilicon, silicon chip reflectivity can be effectively reduced, improve efficiency of solar cell, and
The more existing Buddha's warrior attendant wire cutting polycrystalline silicon surface wool manufacturing method of the method, cost is cheaper.
A kind of surface wool manufacturing method of polysilicon chip of the invention, is carried out rotten for the first time to the polysilicon chip after cleaning successively
Erosion and second corrosion complete making herbs into wool, when corroding for the first time, the Buddha's warrior attendant wire cutting polysilicon chip after cleaning are immersed in into first
Corrode in etchant solution, during second corrosion, the polysilicon chip after first time corrodes is placed in by the second etchant solution
Corroded in the mist that atomization is formed.
Often once corroded during making herbs into wool during practical application, in etching method of the invention and be required for using deionization
Water is cleaned, and also to be dried after being cleaned with deionized water after corroding for the second time.
Polysilicon chip is cleaned first in making herbs into wool, cleaning method is as follows：It is cleaned by ultrasonic gold in ethanol, DI successively
The polysilicon chip of firm wire cutting, then will further be cleaned in the silicon chip input RCA solution after cleaning at 80 DEG C, to remove silicon chip
Surface organic matter and metal ion.
Etching method of the invention has universality, can the making herbs into wool on various polysilicon chips, preferably, in the present invention
The polysilicon chip is the polysilicon chip of Buddha's warrior attendant wire cutting.
It is used for the surface of the silicon chip for removing Buddha's warrior attendant wire cutting in etching method of the invention by corrosion one side for the first time
Layer is damaged, on the other hand also micron order etch pit (i.e. vermiform etch pit pattern) is formed in polysilicon surface, it is preliminary to reduce anti-
Penetrate rate.By second corrosion, uniform corrosion small holes on the micron order etch pit that first time corrosion is formed, further
Reduce reflectivity.
Shape will be placed in the mist of the second etchant solution by the polysilicon chip of corrosion for the first time during second corrosion in the present invention
Corroded in the mist for changing formation, the second etchant solution formed after being so atomized is changed into the table that droplet condenses in polysilicon chip
Corroded in face of it, polysilicon surface is formed fine and close, uniform nano level small holes.
When carrying out second corrosion in the present invention, first the polysilicon chip after first time corrodes can be placed in container (should
Container material quality requirement can not be corroded by the second etchant solution, and polytetrafluoroethylcontainer container is preferably in the present invention), by the second corrosive liquid
Being passed through after Compressed air nebulization method, ultrasonic atomization method etc. generate mist carries out second corrosion in the container for be placed with silicon chip.
The conditions such as reaction time, reaction temperature when the first etchant solution and the second etchant solution and corrosion are directly closed
The quality of the matte prepared is tied to, and then has influence on the reflectivity of silicon chip.
, without particular/special requirement, energy corrosion of silicon can be conventional silicon chip for first etchant solution and the second etchant solution
The etchant solution used during making herbs into wool.
Preferably, first etchant solution is HF, HNO3With the mixed solution of deionized water.And first corrosion
Each component volume ratio is in solution：HF:HNO3:DI=1:(0.5~6):(1.5~7), wherein, HF represents that concentration is 49%
Hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water.Reaction temperature when corroding for the first time is 30~70
DEG C, the reaction time is 30~240s.
Preferably, etchant solution is HF, HNO3With the mixed solution of deionized water.Each group in second etchant solution
Partial volume ratio is HF:HNO3:DI=(1~9):(1~9):1, wherein, HF represents the hydrofluoric acid that concentration is 49%, HNO3Represent dense
The nitric acid for 65% is spent, DI represents deionized water.Second reaction temperature when corroding is 30~60 DEG C, the reaction time is 1~
20min。
Further preferably, described reaction temperature is heated to when second corrodes to the polysilicon chip.
By reasonable selection etchant solution, setting corrosion parameter can make the matte for finally preparing reach best effective
Really, improving the efficiency of solar cell.
Specified otherwise is not made, the volume ratio of each component refers both to this in the first etchant solution and the second etchant solution in the present invention
The volume ratio of corresponding raw material.
Etching method of the invention does not use any noble metal, and cost is relatively low, and liquid waste processing is relatively simple；Need not be using big
The dry etching equipment of type, method is simple and easy to apply；The matte prepared is more uniform, and effectively minority carrier life time is higher, reflectivity
It is relatively low, it is applied to be conducive to improving battery efficiency during solar cell.And the etching method has universality, it is adaptable to all polycrystalline
Silicon chip, including Buddha's warrior attendant wire cutting polysilicon chip.It is noted that the diamond wire that etching method of the invention can be solved effectively is cut
The making herbs into wool problem of polysilicon chip is cut, its preparation process is simple is with low cost, obtained matte has relatively low reflectivity and higher
Minority carrier life time, with very strong market prospects.
Brief description of the drawings
Fig. 1 is the SEM plans of the Buddha's warrior attendant wire cutting polysilicon chip surface matte of embodiment 1；
Fig. 2 is the SEM sectional views of the Buddha's warrior attendant wire cutting polysilicon chip surface matte of embodiment 1.
Specific embodiment
In order to be better understood from the present invention, side of the invention is expanded on further below in conjunction with specific embodiments and the drawings
Case, but present disclosure is not limited solely to the following examples.
Embodiment 1
The surface wool manufacturing method of the polysilicon chip of the present embodiment, comprises the following steps：
(1) by thickness be 180 ± 5 μm, size for 30mm × 30mm Buddha's warrior attendant wire cutting polysilicon chip be sequentially placed into ethanol,
It is cleaned by ultrasonic in DI, then is cleaned in immersion RCA solution at 80 DEG C, is removed silicon chip surface organic matter and metal ion；
(2) silicon chip after cleaning is put into corrosive liquid 1 carries out first time corrosion.Sealing, reaction temperature is 50 DEG C, reaction
Time is 90s, and corrosive liquid 1 is HF, HNO3With the mixed solution of DI, HF:HNO3:DI=1:5:6, wherein, HF represents that concentration is
49% hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water；
(3) silicon chip that step 2 is obtained is cleaned with DI, after be placed in polytetrafluoroethylcontainer container, corrosive liquid 2 is put into ultrasound
In atomizer, the corrosion acid mist for producing is passed through carries out second corrosion in the container for be placed with silicon chip.Reaction time 5min, corrosion
Liquid 2 is HF, HNO3With the mixed solution of DI, HF:HNO3:DI=2.25:0.75:1, wherein, HF represents the hydrogen fluorine that concentration is 49%
Acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water, and temperature is 60 DEG C；
(4) silicon chip for obtaining step 3 DI is rinsed several times, and drying completes making herbs into wool.
The volume ratio of each component refers both to the corresponding raw material in the first etchant solution and the second etchant solution in the present embodiment
Volume ratio.
Fig. 1 and Fig. 2 are respectively the plan and section after polycrystalline silicon surface wool manufacturing using the etching method of the present embodiment
Figure, it can be seen that the etching method of the present embodiment can form fine and close, uniform matte, and suede in Buddha's warrior attendant wire cutting polysilicon chip
Face structure is the composite construction of micron and nanometer.Matte average reflectance is about 6.8% obtained in the present embodiment.
Embodiment 2
The surface wool manufacturing method of the polysilicon chip of the present embodiment, comprises the following steps：
(1) by thickness be 180 ± 5 μm, size for 30mm × 30mm Buddha's warrior attendant wire cutting polysilicon chip be sequentially placed into ethanol,
It is cleaned by ultrasonic in DI, then is cleaned in immersion RCA solution at 80 DEG C, is removed silicon chip surface organic matter and metal ion；
(2) silicon chip after cleaning is put into corrosive liquid 1 carries out first time corrosion.Sealing, reaction temperature is 50 DEG C, reaction
Time is 90s, and corrosive liquid 1 is HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=1:5:6 wherein, and HF represents that concentration is
49% hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water；
(3) silicon chip that step 2 is obtained is cleaned with DI, after be placed in polytetrafluoroethylcontainer container, corrosive liquid 2 is put into ultrasound
In atomizer, the corrosion acid mist for producing is passed through carries out second corrosion in the container for be placed with silicon chip.Reaction time 10min, it is rotten
Erosion liquid 2 is HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=1.125:0.375:1, wherein, HF represents that concentration is 49%
Hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water, and temperature is 50 DEG C；
(4) silicon chip for obtaining step 3 DI rinses several times, dry for standby.
The volume ratio of each component refers both to the corresponding raw material in the first etchant solution and the second etchant solution in the present embodiment
Volume ratio.Matte reflectivity is about 8.9% obtained in the present embodiment.
Embodiment 3
The surface wool manufacturing method of the polysilicon chip of the present embodiment, comprises the following steps：
(1) by thickness be 180 ± 5 μm, size for 30mm × 30mm Buddha's warrior attendant wire cutting polysilicon chip be sequentially placed into ethanol,
It is cleaned by ultrasonic in DI, then is cleaned in immersion RCA solution at 80 DEG C, is removed silicon chip surface organic matter and metal ion；
(2) silicon chip after cleaning is put into corrosive liquid 1 carries out first time corrosion.Sealing, reaction temperature is 50 DEG C, reaction
Time is 90s, and corrosive liquid 1 is HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=1:5:6, wherein, HF represents that concentration is
49% hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water；
(3) silicon chip that step 2 is obtained is cleaned with DI, after be placed in polytetrafluoroethylcontainer container, by corrosive liquid 2 pass through high pressure
Gas tip formation corrosion acid mist is passed through and second corrosion is carried out in the container for be placed with silicon chip.Reaction time 1min, corrosive liquid 2 is
HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=4.5:1.5:1, wherein, HF represents the hydrofluoric acid that concentration is 49%,
HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water, and temperature is 35 DEG C；
(4) silicon chip for obtaining step 3 DI rinses several times, dry for standby.
The volume ratio of each component refers both to the corresponding raw material in the first etchant solution and the second etchant solution in the present embodiment
Volume ratio.Matte reflectivity is about 9.5% obtained in the present embodiment.
Embodiment 4
The surface wool manufacturing method of the polysilicon chip of the present embodiment, comprises the following steps：
(1) by thickness be 180 ± 5 μm, size for 30mm × 30mm mortar wire cutting polysilicon chip be sequentially placed into ethanol,
It is cleaned by ultrasonic in DI, then is cleaned in immersion RCA solution at 80 DEG C, is removed silicon chip surface organic matter and metal ion；
(2) silicon chip after cleaning is put into corrosive liquid 1 carries out first time corrosion.Sealing, reaction temperature is 50 DEG C, reaction
Time is 90s, and corrosive liquid 1 is HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=1:5:6, wherein, HF represents that concentration is
49% hydrofluoric acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water；
(3) silicon chip that step 2 is obtained is cleaned with DI, after be placed in polytetrafluoroethylcontainer container, by corrosive liquid 2 by a high speed
Centrifugal spray shower nozzle formation corrosion acid mist is passed through and second corrosion is carried out in the container for be placed with silicon chip.Reaction time 2min, corrosion
Liquid 2 is HF, HNO3With the mixed solution of DI, and HF:HNO3:DI=4.5:1.5:1, wherein, HF represents the hydrogen fluorine that concentration is 49%
Acid, HNO3The nitric acid that concentration is 65% is represented, DI represents deionized water, and temperature is 35 DEG C；
(4) silicon chip for obtaining step 3 DI rinses several times, dry for standby.
The volume ratio of each component refers both to the corresponding raw material in the first etchant solution and the second etchant solution in the present embodiment
Volume ratio.Matte reflectivity is about 12.5% obtained in the present embodiment.
Disclosed above is only specific embodiment of the invention, but protection scope of the present invention is not limited thereto, and is appointed
What those of ordinary skill in the art can carry out various changes and modification without deviating from spirit of the invention and model to the present invention
Enclose, should all cover within the protection domain of this practicality invention.
Claims (9)
1. a kind of surface wool manufacturing method of polysilicon chip, it is characterised in that carried out to the polysilicon chip after cleaning successively for the first time
Corrosion and second corrosion complete making herbs into wool, when corroding for the first time, the Buddha's warrior attendant wire cutting polysilicon chip after cleaning are immersed in into the
Corrode in one etchant solution, during second corrosion, the polysilicon chip after first time corrodes is placed in by the second etchant solution
Atomization formed mist in corroded.
2. the surface wool manufacturing method of polysilicon chip as claimed in claim 1, it is characterised in that the polysilicon chip is diamond wire
The polysilicon chip of cutting.
3. the surface wool manufacturing method of polysilicon chip as claimed in claim 1 or 2, it is characterised in that the first etchant solution is HF,
HNO3With the mixed solution of deionized water.
4. the surface wool manufacturing method of polysilicon chip as claimed in claim 3, it is characterised in that each in first etchant solution
Volume components ratio is：HF:HNO3:DI=1:(0.5~6):(1.5~7), wherein, HF represents the hydrofluoric acid that concentration is 49%,
HNO3Represent that the nitric acid DI that concentration is 65% represents deionized water.
5. the surface wool manufacturing method of polysilicon chip as claimed in claim 4, it is characterised in that reaction temperature when corroding for the first time
It is 30~70 DEG C to spend, and the reaction time is 30~240s.
6. the surface wool manufacturing method of polysilicon chip as claimed in claim 1 or 2, it is characterised in that the second etchant solution is HF,
HNO3With the mixed solution of deionized water.
7. the surface wool manufacturing method of polysilicon chip as claimed in claim 6, it is characterised in that each in second etchant solution
Volume components ratio is HF:HNO3:DI=(1~9):(1~9):1, wherein, HF represents the hydrofluoric acid that concentration is 49%, HNO3Represent
Concentration is 65% nitric acid, and DI represents deionized water.
8. the surface wool manufacturing method of polysilicon chip as claimed in claim 7, it is characterised in that reaction temperature when corroding for second
It is 30~60 DEG C to spend, and the reaction time is 1~20min.
9. the surface wool manufacturing method of polysilicon chip as claimed in claim 8, it is characterised in that to described many when corroding for second
Crystal silicon chip is heated to described reaction temperature.
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| CN108269884A (en) * | 2018-01-25 | 2018-07-10 | 浙江大学 | A kind of preparation method of Buddha's warrior attendant wire cutting polycrystalline silicon solar battery suede |
| CN110187061A (en) * | 2019-06-03 | 2019-08-30 | 西安奕斯伟硅片技术有限公司 | A kind of processing method of silicon wafer, detection method and processing unit |
| CN111370307A (en) * | 2018-12-26 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Semiconductor etching method |
| US20200411331A1 (en) * | 2019-06-28 | 2020-12-31 | Flosfia Inc. | Method of etching object and etching device |
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| CN108063170A (en) * | 2017-12-15 | 2018-05-22 | 浙江晶科能源有限公司 | A kind of etching method of polysilicon chip |
| CN108269884A (en) * | 2018-01-25 | 2018-07-10 | 浙江大学 | A kind of preparation method of Buddha's warrior attendant wire cutting polycrystalline silicon solar battery suede |
| CN108269884B (en) * | 2018-01-25 | 2019-12-03 | 浙江大学 | A kind of preparation method of Buddha's warrior attendant wire cutting polycrystalline silicon solar battery suede |
| CN111370307A (en) * | 2018-12-26 | 2020-07-03 | 东莞新科技术研究开发有限公司 | Semiconductor etching method |
| CN110187061A (en) * | 2019-06-03 | 2019-08-30 | 西安奕斯伟硅片技术有限公司 | A kind of processing method of silicon wafer, detection method and processing unit |
| CN110187061B (en) * | 2019-06-03 | 2022-03-25 | 西安奕斯伟材料科技有限公司 | Processing method, detection method and processing device for silicon wafer |
| US20200411331A1 (en) * | 2019-06-28 | 2020-12-31 | Flosfia Inc. | Method of etching object and etching device |
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