CN102299205A - Method for texturing surface of crystal silicon solar cell - Google Patents
Method for texturing surface of crystal silicon solar cell Download PDFInfo
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- CN102299205A CN102299205A CN2011102517748A CN201110251774A CN102299205A CN 102299205 A CN102299205 A CN 102299205A CN 2011102517748 A CN2011102517748 A CN 2011102517748A CN 201110251774 A CN201110251774 A CN 201110251774A CN 102299205 A CN102299205 A CN 102299205A
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- crystal silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for texturing the surface of a crystal silicon solar cell. The method comprises the following steps of: atomizing an alkali solution into alkali suspended liquid drops with the grain diameters of less than 20 microns by using an atomizing technology, heating a crystal silicon wafer of which the damaged layer of the surface is removed, depositing the alkali suspended liquid drops on the surface of the crystal silicon wafer to form a layer of discretely distributed alkali liquid drops, wherein the alkali liquid drops erode an area of the crystal silicon wafer which is covered by the alkali liquid drops, and forming a textured structure with an anti-reflective property on the surface of the crystal silicon wafer. Compared with the prior art, the method is applicable for texturing the surfaces of both monocrystal silicon wafers and polycrystal silicon wafers. The invention has the advantages that: the texturing method is simple; the chemical raw materials are nontoxic and have a low consumption; and the textured surface manufacturing effect is excellent; and the method has a wide application prospect in field of solar cells.
Description
Technical field
The present invention relates to the crystal silicon solar energy battery technical field, be specifically related to a kind of surface wool manufacturing method of crystal silicon solar energy battery.
Background technology
In solar cell application, crystal silicon solar energy battery is that the crystal silicon chip that obtains by line cutting technology with pulling of silicon single crystal or ingot casting polysilicon is a base material, and the solar battery sheet that is made in conjunction with a series of semiconductor technologies.Undressed crystal silicon chip to the reflectivity of sunlight up to more than 30%, limited the utilization ratio of solar cell greatly, so the matte manufacture craft on crystal silicon chip surface becomes requisite one procedure in the crystal silicon solar energy battery manufacturing to sunlight.
The surface matte is made the method that is meant by physics or chemistry makes crystal silicon chip form the process on rough surface.The suede structure of making can make incident light repeatedly reflect in crystal silicon chip inside, increases the light path of incident light in silicon chip, and then increases the effective absorption of silicon chip to incident light, improves the short circuit current and the photoelectric conversion efficiency of solar cell.
The surface wool manufacturing technology of crystal silicon solar energy battery mainly is divided into dry method making herbs into wool and wet-method etching two big classes.Dry method making herbs into wool is meant the suede structure that methods such as adopting machinery or plasma etching obtains having anti-reflective effect, yet this kind technology usually needs expensive equipment and production capacity limited, so the most employing of the production of commercialization crystal-silicon solar cell is the wet-method etching of mechanism with chemical solution corrosion making herbs into wool.At present, in monocrystaline silicon solar cell production, usually utilize strong base solution the anisotropic etch characteristic of monocrystalline silicon to be prepared the suede structure of monocrystalline silicon sheet surface.But polysilicon solar cell is because the no regularity of crystal orientation generally adopts hydrofluoric acid (HF) and nitric acid (HNO
3) the mixed solution corroding method obtain the anti-reflection structure on polysilicon chip surface.
Dry method making herbs into wool relatively, the production capacity of wet-method etching is big, is easy to large-scale production, but conventional wet-method etching need consume a large amount of chemicals, can produce the dangerous waste liquid that a large amount of needs are handled, the processing of these waste liquids has increased the production of crystalline silicon solar batteries cost.In addition, the polysilicon solar cell surface wool manufacturing has adopted and has had volatile hypertoxic chemical reagent HF and HNO
3, be unfavorable for health and environmental protection, and utilize caustic corrosion making herbs into wool to compare that the matte anti-reflective effect that obtains is also not really desirable with monocrystalline silicon piece.
Summary of the invention
Technical purpose of the present invention is the deficiency at present industrialization crystal silicon chip surface wool manufacturing technology, a kind of technological approaches that is applicable to that simultaneously monocrystalline silicon piece and polysilicon chip surface matte are made is provided, it is simple to have technology, chemical raw material consumption less, do not have severe toxicity, and matte is made advantages such as respond well.
The present invention realizes that the technical scheme that above-mentioned technical purpose adopts is: a kind of surface wool manufacturing method of crystal silicon solar energy battery, adopt atomization technique to make alkaline solution be atomized into particle diameter and drip less than 20 microns alkaline suspension liquid; To remove the crystal silicon chip of handling through surface damage layer heats, alkaline suspension liquid is dripped be deposited on the crystal silicon chip surface, form the alkaline drop of one deck discrete distribution, its crystal silicon chip zone that is covered of this alkalescence droplet erosion forms the suede structure with antireflection characteristic on the crystal silicon chip surface.
Described atomization technique includes but not limited to ultrasonic atomization, high-pressure atomization, rotating disk atomizing and gas atomization.
The aqueous solution of preferred NaOH of described alkaline solution or KOH, according to the mass percent meter, the concentration of NaOH or KOH is preferably 1%～50%.
The heating-up temperature of described crystal silicon chip is preferably 70 ℃～100 ℃.
Described crystal silicon chip comprises monocrystalline silicon piece and polysilicon chip.
Described alkaline suspension liquid drips the method that is deposited on the crystal silicon chip surface to be had a lot, for example, adopts spray gun that alkaline suspension liquid is dripped and blows to the crystal silicon chip surface; Utilize fan that alkaline suspension liquid is dripped and blow to the crystal silicon chip surface; Perhaps crystal silicon chip is placed on the conveyer belt of alkali corrosion resistance, utilizes conveyer belt at the uniform velocity regional, make hanging drop be deposited on the crystal silicon chip surface through this atomizing with certain speed.In order to realize large-scale industrialized production, the preferred employing is placed on crystal silicon chip on the conveyer belt of alkali corrosion resistance, utilizes conveyer belt at the uniform velocity regional through this atomizing with certain speed, makes hanging drop be deposited on the crystal silicon chip surface.
Compared with prior art, the present invention adopts atomization techniques such as ultrasonic wave, high pressure to make alkaline solution be atomized into particle diameter less than 20 microns hanging drop, and discontinuous, be deposited on the crystal silicon chip upper surface of heating to discrete distribution, make the suede structure that obtains having good antireflection characteristic behind the discontinuous alkaline drop local corrosion crystal silicon chip, have following advantage:
1) the surperficial matte that is not only applicable to monocrystalline silicon piece is made, and is applicable to the surperficial matte making of polysilicon chip, and the anti-reflective effect of matte is good;
2) technology is simple, need not the surperficial matte making that expensive equipment just can be realized crystal silicon chip;
3) need not to adopt volatile hypertoxic chemical reagent hydrofluoric acid and nitric acid, avoided the problem of infringement health and environmental protection;
4) greatly reduce the consumption of chemicals, and greatly reduce processing cost residual contaminants.
Therefore, method for manufacturing textured surface provided by the invention is simple, with low cost, matte is respond well, be easy to realize large-scale industrial production, the consumption of the chemicals that uses in the process for etching of consumption far below present industrialization employing to chemical raw material has broad application prospects in area of solar cell.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail, it is pointed out that the following stated embodiment is intended to be convenient to the understanding of the present invention, but should not limit protection scope of the present invention with this.
Embodiment 1:
(1) monocrystalline silicon piece dries up with nitrogen then with NaOH solution removal surface damage layer;
(2) the preparation mass percent concentration is 40% the NaOH aqueous solution, adopts ultrasonic atomization technique with the processing that atomizes of this NaOH solution, makes the NaOH solution atomization become the suspension droplet of particle diameter less than 5 μ m;
(3) will be heated to 90 ℃ through the monocrystalline silicon piece that step (1) is handled, be placed on then on the conveyer belt of alkali corrosion resistance, utilize conveyer belt at the uniform velocity to pass through the ultrasonic atomizatio zone with certain speed, monocrystalline silicon sheet surface deposition one deck evenly, the NaOH droplet of discrete distribution, these NaOH droplets corrode its crystal silicon chip zone that covers, and form suede structure through 1 minute corrosion back at monocrystalline silicon sheet surface;
(4) clean, dry the monocrystalline silicon piece of handling through step (3), carry out follow-up battery production process such as diffusion then.
Embodiment 2:
(1) polysilicon chip dries up with nitrogen then with NaOH solution removal surface damage layer;
(2) the preparation mass percent concentration is 20% the NaOH aqueous solution, adopts ultrasonic atomization technique with the processing that atomizes of this NaOH solution, makes the NaOH solution atomization become the suspension droplet of particle diameter less than 10 μ m;
(3) will be heated to 70 ℃ through the monocrystalline silicon piece that step (1) is handled, be placed on then on the conveyer belt of alkali corrosion resistance, utilize conveyer belt at the uniform velocity to pass through the ultrasonic atomizatio zone with certain speed, at even, the discontinuous NaOH droplet of surface deposition one deck of polysilicon chip, these NaOH droplets corrode its crystal silicon chip zone that covers, and form suede structure through 2 minutes corrosion backs on the polysilicon chip surface;
(4) clean, dry the polysilicon chip of handling through step (3), carry out follow-up battery production process such as diffusion then.
Embodiment 3:
(1) monocrystalline silicon piece dries up with nitrogen then with KOH solution removal surface damage layer;
(2) the preparation mass percent concentration is 10% the KOH aqueous solution, adopts the high-pressure atomization technology with the processing that atomizes of this KOH solution, makes the KOH solution atomization become the suspension droplet of particle diameter less than 20 μ m;
(3) will be heated to 70 ℃ through the monocrystalline silicon piece that step (1) is handled, adopt the KOH droplet after spray gun will atomize to blow to monocrystalline silicon sheet surface, form discontinuous KOH droplet at monocrystalline silicon sheet surface, form suede structure at monocrystalline silicon sheet surface through 5 minutes corrosion backs;
(4) clean, dry the monocrystalline silicon piece of handling through step (3), carry out follow-up battery production process such as diffusion then.
Claims (7)
1. the surface wool manufacturing method of a crystal silicon solar energy battery is characterized in that: adopt atomization technique to make alkaline solution be atomized into particle diameter and drip less than 20 microns alkaline suspension liquid; To remove the crystal silicon chip of handling through surface damage layer heats, described alkaline suspension liquid is dripped be deposited on the crystal silicon chip surface, form the alkaline drop of one deck discrete distribution, its crystal silicon chip zone that is covered of described alkaline droplet erosion forms the suede structure with antireflection characteristic on the crystal silicon chip surface.
2. the surface wool manufacturing method of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: described crystal silicon chip comprises monocrystalline silicon piece and polysilicon chip.
3. the surface wool manufacturing method of a kind of crystal silicon solar energy battery according to claim 1 is characterized in that: described atomization technique comprises ultrasonic atomization, high-pressure atomization, rotating disk atomizing and gas atomization.
4. the surface wool manufacturing method of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: described alkaline solution is the aqueous solution of NaOH or the aqueous solution of KOH.
5. the surface wool manufacturing method of a kind of crystal silicon solar energy battery according to claim 4, it is characterized in that: the mass percent concentration of described NaOH is 1%～50%, the mass percent concentration of described KOH is 1%～50%.
6. the surface wool manufacturing method of a kind of crystal silicon solar energy battery according to claim 1, it is characterized in that: the heating-up temperature of described crystal silicon chip is 70 ℃～100 ℃.
7. according to the surface wool manufacturing method of the described a kind of crystal silicon solar energy battery of arbitrary claim in the claim 1 to 6, it is characterized in that: described crystal silicon chip is placed on the conveyer belt of alkali corrosion resistance, utilize conveyer belt at the uniform velocity regional, make hanging drop be deposited on the crystal silicon chip surface through this atomizing with certain speed.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290488A (en) * | 2011-07-21 | 2011-12-21 | 中国科学院宁波材料技术与工程研究所 | Preparation method of thick polysilicon film |
| CN105405930A (en) * | 2015-12-21 | 2016-03-16 | 南昌大学 | Micro-droplet etching texturing method for polycrystalline silicon chip for solar battery |
| CN105826429A (en) * | 2016-05-12 | 2016-08-03 | 华南师范大学 | Preparation method of micro nano composite textured structure black silicon and black silicon solar cells |
| CN106299031A (en) * | 2016-09-21 | 2017-01-04 | 南昌大学 | A kind of microlayer model etching etching method of solar cell carrying silicon wafers |
| CN106684174A (en) * | 2016-12-22 | 2017-05-17 | 浙江大学 | Surface texturing method of polycrystalline silicon chips |
| CN109680340A (en) * | 2019-02-27 | 2019-04-26 | 南京航空航天大学 | A kind of fluff making device of Buddha's warrior attendant wire cutting polysilicon chip |
| CN112098406A (en) * | 2020-08-04 | 2020-12-18 | 江西赛维Ldk太阳能高科技有限公司 | Method for measuring crystal direction of crystalline silicon and application |
| CN114035253A (en) * | 2021-11-23 | 2022-02-11 | 西安知微传感技术有限公司 | MEMS (micro-electromechanical system) micro-mirror with stray light elimination function, laser scanning equipment and manufacturing method of micro-mirror |
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| CN1983646A (en) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | Production of monocrystalline silicon solar battery suede |
| CN101717946A (en) * | 2009-12-30 | 2010-06-02 | 江阴市润玛电子材料有限公司 | Liquid and method for etching texture on surfaces of silicon wafers |
| CN101942661A (en) * | 2009-07-07 | 2011-01-12 | 倪党生 | System and method for performing single-side continuous chemical wet treatment by using mist chemical agent |
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| CN1983646A (en) * | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | Production of monocrystalline silicon solar battery suede |
| CN101942661A (en) * | 2009-07-07 | 2011-01-12 | 倪党生 | System and method for performing single-side continuous chemical wet treatment by using mist chemical agent |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290488A (en) * | 2011-07-21 | 2011-12-21 | 中国科学院宁波材料技术与工程研究所 | Preparation method of thick polysilicon film |
| CN105405930A (en) * | 2015-12-21 | 2016-03-16 | 南昌大学 | Micro-droplet etching texturing method for polycrystalline silicon chip for solar battery |
| CN105405930B (en) * | 2015-12-21 | 2017-04-05 | 南昌大学 | A kind of microlayer model etching etching method of solar cell polysilicon chip |
| CN105826429A (en) * | 2016-05-12 | 2016-08-03 | 华南师范大学 | Preparation method of micro nano composite textured structure black silicon and black silicon solar cells |
| CN105826429B (en) * | 2016-05-12 | 2017-05-24 | 华南师范大学 | Preparation method of micro nano composite textured structure black silicon and black silicon solar cells |
| CN106299031A (en) * | 2016-09-21 | 2017-01-04 | 南昌大学 | A kind of microlayer model etching etching method of solar cell carrying silicon wafers |
| CN106299031B (en) * | 2016-09-21 | 2017-11-28 | 南昌大学 | A kind of microlayer model etching etching method of solar cell carrying silicon wafers |
| CN106684174A (en) * | 2016-12-22 | 2017-05-17 | 浙江大学 | Surface texturing method of polycrystalline silicon chips |
| CN109680340A (en) * | 2019-02-27 | 2019-04-26 | 南京航空航天大学 | A kind of fluff making device of Buddha's warrior attendant wire cutting polysilicon chip |
| CN112098406A (en) * | 2020-08-04 | 2020-12-18 | 江西赛维Ldk太阳能高科技有限公司 | Method for measuring crystal direction of crystalline silicon and application |
| CN114035253A (en) * | 2021-11-23 | 2022-02-11 | 西安知微传感技术有限公司 | MEMS (micro-electromechanical system) micro-mirror with stray light elimination function, laser scanning equipment and manufacturing method of micro-mirror |
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Application publication date: 20111228 |