CN104835879A - Texturing method of polysilicon solar cell - Google Patents
Texturing method of polysilicon solar cell Download PDFInfo
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- CN104835879A CN104835879A CN201510287050.7A CN201510287050A CN104835879A CN 104835879 A CN104835879 A CN 104835879A CN 201510287050 A CN201510287050 A CN 201510287050A CN 104835879 A CN104835879 A CN 104835879A
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- polysilicon solar
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 32
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 48
- 239000002253 acid Substances 0.000 claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000008367 deionised water Substances 0.000 claims abstract description 24
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 23
- 229910001868 water Inorganic materials 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 86
- 210000002268 wool Anatomy 0.000 claims description 49
- 235000008216 herbs Nutrition 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 18
- 230000002000 scavenging effect Effects 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 11
- 230000035484 reaction time Effects 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 14
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000000654 additive Substances 0.000 abstract description 2
- 230000000996 additive effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001795 light effect Effects 0.000 description 4
- 229910021418 black silicon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a texturing method of a polysilicon solar cell. Twice texturing is included, and a combined acid corrosion solution is by formed mixing HNO3, HF and H2O. The texturing method comprises the following steps that A) first texturing is carried out on the polysilicon solar cell by using the mixed acid corrosion solution, in which the mass concentration of HNO3 is greater than that of HF, of the rich HNO3 system; B) the polysilicon solar cell after texturing in step A is cleaned by deionized water; and C) secondary texturing is carried out on the polysilicon solar cell by using the mixed acid corrosion solution, in which the mass concentration of HNO3 is greater than that of HF, of the rich HNO3 system. The solutions used in twice texturing need neither a texturing additive nor other chemicals, the texturing reflectivity of twice texturing is 9% or more lower than that of once texturing traditionally, the light tripping effect of the textured surface is improved, the short circuit current is improved by 200mA or more, and the efficiency is improved by 0.35%; and the texturing method can be combined with a present production line conveniently to reduce the cost and provide convenience for large-scale production.
Description
Technical field
The invention belongs to crystal silicon solar batteries technical field, be specifically related to a kind of etching method of polysilicon solar cell.
Background technology
In crystal silicon solar batteries production process, the conventional production process of polysilicon solar battery slice is making herbs into wool, diffusion, etching, PECVD, silk screen printing, sintering and test six procedure, the acid corrosion etching method of traditional polycrystalline silicon battery plate uses the mixed acid of nitric acid and hydrofluoric acid to carry out a step making herbs into wool as corrosive liquid, utilize the oxidizability of nitric acid to be oxidized by silicon chip surface, generate silicon dioxide; Then utilizing hydrofluoric acid to be dissolved thus form microstructure by the silicon dioxide of generation is vermiform corrosion matte, the matte reflectivity prepared by a step making herbs into wool is higher, more than 24%, but it is poor to fall into light effect, and easily there is flower sheet, paillette or dark line sheet in preparation process, affects outward appearance and the photoelectric conversion efficiency of cell piece.The metal catalytic chemical etching method of software engineering researchers invent, the black silicon technology that catalyzed corrosion prepares micron-nanometer level compound matte is carried out at polycrystalline silicon battery plate surface deposition noble metal granule, although it is better to fall into light effect, but the more difficult removing of precious metal impurity that preparation process is introduced, these noble metal granules form serious complex centre on polycrystalline silicon battery plate surface, in addition when PECVD operation deposition SiNx passivated reflection reducing membrane, nano level etch pit hole is difficult to good passivation, exposed surface, hole, hole forms a large amount of complex centres, the sunken light advantage of black silicon is caused to embody.And noble metal cost is higher, black silicon preparation cost is significantly increased, and large-scale production has certain limitation.
Summary of the invention
This is for addressing the aforementioned drawbacks, and the invention provides a kind of etching method of polysilicon solar cell, the method adopts two step acid corrosion methods; The first step uses the rich nitric acid system mixed acid solution of HNO3/HF/H2O to carry out making herbs into wool, obtains micron order vermiform corrosion matte; Then adopt the rich hydrofluoric acid system mixed acid solution of HNO3/HF/H2O to carry out secondary making herbs into wool, obtain sub-micron-micron order corrosion matte; The acid solution that twice making herbs into wool all uses, without the need to making herbs into wool additive and other chemicals, the traditional etching method of making herbs into wool luminance factor is low by more than 9%, and substantially increase the sunken light effect of matte, short circuit current can promote more than 200mA, improved efficiency 0.35%; This etching method can merge with existing product line easily, only needs to do a small amount of scrap build, and not needing increases complicated equipment and operation, greatly reduces cost, is convenient to large-scale production.
For achieving the above object, the invention provides following technical scheme:
An etching method for polysilicon solar battery slice, adopts the mixed acid corrosive liquid of specific proportioning, carries out twice making herbs into wool according to following steps, and described mixed acid etchant solution is mixed by HNO3, HF and H2O and forms:
A. use the mixed acid corrosive liquid of rich nitric acid system to carry out first time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of nitric acid is greater than the mass concentration of hydrofluoric acid;
B. deionized water is used to clean to the polysilicon solar battery slice after step A making herbs into wool;
C. use the mixed acid corrosive liquid of rich hydrofluoric acid system to carry out second time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of hydrofluoric acid is greater than the mass concentration of nitric acid.
Further, in described step A, in mixed acid etchant solution, the mass concentration ratio of nitric acid and hydrofluoric acid is 5.5:1 ~ 9:1.
Further, in described step C, in mixed acid etchant solution, the mass concentration ratio of nitric acid and hydrofluoric acid is 1:50 ~ 1:100.Further, in described step A during making herbs into wool, reaction temperature is 6 ~ 10 DEG C; Reaction time is 80 ~ 120s.
Further, in described step C during making herbs into wool, reaction is carried out at normal temperatures; Reaction time is 3 ~ 10min.Further, after described step C making herbs into wool completes, also need to carry out following steps technique and process: D. deionized water carries out second time cleaning to cell piece;
E. with potassium hydroxide solution, cell piece is cleaned;
F. with deionized water, third time cleaning is carried out to cell piece;
G. with the mixed solution of hydrofluoric acid and hydrochloric acid, cell piece is cleaned;
H. with deionized water, the 4th cleaning is carried out to cell piece;
I. cell piece is dried.
Further, the step B that described deionized water carries out, for the second time, for the third time, the 4th cleaning carry out all at normal temperatures, and scavenging period is 15 ~ 30s.Compared with prior art, the present invention has following beneficial effect:
1, adopt the method for twice making herbs into wool, first time making herbs into wool uses the mixed acid solution of rich nitric acid system, and wherein the concentration of nitric acid is greater than the concentration of hydrofluoric acid, and the oxide layer on polysilicon chip surface is by after hydrofluoric acid dissolution, and the silicon exposed is immediately by excessive nitric acid oxidation.Make surface cover layer of oxide layer all the time, therefore can produce micron order vermiform corrosion matte on silicon chip, then in second time making herbs into wool, adopt hydrofluoric acid concentration to be greater than the mixed acid solution of concentration of nitric acid, thus reduce nitric acid to the oxidation density of silicon chip surface, because the concentration of hydrofluoric acid is greater than concentration of nitric acid, therefore, the silica generated is immediately by excessive hydrofluoric acid dissolution, surface is made to be always elemental silicon, the vermiform corrosion matte that first time making herbs into wool produces is corroded further, utilize in the corrosion process of rich hydrofluoric acid system, the oxide layer density generated is less, the feature that the size of etch pit is less, form sub-micron-micron-sized compound matte, utilize the silicon chip of making herbs into wool of the present invention, the traditional etching method of its making herbs into wool luminance factor is low by more than 9%, substantially increase the sunken light effect of matte, short circuit current can promote more than 200mA, improved efficiency 0.35%,
2, by regulating ratio and the reaction temperature of hydrofluoric acid and nitric acid, regulating and controlling the oxidizing process of the nitric acid of second time making herbs into wool, when keeping reaction rate not too low, reducing the density of oxide layer, to obtain the etch pit hole of submicron order, thus realize object of the present invention;
3, etching method provided by the invention can merge with existing product line easily, only needs to do a small amount of scrap build, and not needing increases complicated equipment and operation, greatly reduces cost, is convenient to large-scale production;
4, mixed acid solution concentration provided by the present invention when reaction temperature, effectively controls corrosion rate, thus effectively achieves the silicon wafer wool making effect wanted required for the present invention.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
The schematic flow sheet of a kind of etching method that Fig. 1 embodiment of the present invention provides.
Polycrystalline silicon suede displaing micro picture (scale: 50 μm) after Fig. 2 etching method anticaustic provided by the invention.
The polycrystalline silicon suede displaing micro picture (scale: 50 μm) that the conventional nitric acid of Fig. 3 and hydrofluoric acid etching solution once corrode.
The conventional making herbs into wool of Fig. 4 and secondary making herbs into wool reflectance curve comparison diagram provided by the invention.
Embodiment
An etching method for polysilicon solar battery slice, adopts the mixed acid corrosive liquid of specific proportioning, carries out twice making herbs into wool according to following steps, and described mixed acid etchant solution is mixed by HNO3, HF and H2O and forms:
A. use the mixed acid corrosive liquid of rich nitric acid system to carry out first time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of nitric acid is greater than the mass concentration of hydrofluoric acid;
B. deionized water is used to clean to the polysilicon solar battery slice after step A making herbs into wool;
C. use the mixed acid corrosive liquid of rich hydrofluoric acid system to carry out second time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of hydrofluoric acid is greater than the mass concentration of nitric acid.
Further, in described step A, in mixed acid etchant solution, the mass concentration ratio of nitric acid and hydrofluoric acid is 5.5:1 ~ 9:1.
Further, in described step C, in mixed acid etchant solution, the mass concentration ratio of nitric acid and hydrofluoric acid is 1:50 ~ 1:100.
Further, in described step A during making herbs into wool, reaction temperature is 6 ~ 10 DEG C; Reaction time is 80 ~ 120s.
Further, in described step C during making herbs into wool, reaction is carried out at normal temperatures; Reaction time is 3 ~ 10min.
As preferably, between described step A and step B technique, need to carry out washed with de-ionized water, scavenging period is 15 ~ 30s.
Further, after described step C making herbs into wool completes, also need to carry out following steps technique and process: D. deionized water carries out second time cleaning to cell piece;
E. with potassium hydroxide solution, cell piece is cleaned;
F. with deionized water, third time cleaning is carried out to cell piece;
G. with the mixed solution of hydrofluoric acid and hydrochloric acid, cell piece is cleaned;
H. with deionized water, the 4th cleaning is carried out to cell piece;
I. cell piece is dried.
Further, the step B that described deionized water carries out, for the second time, for the third time, the 4th cleaning carry out all at normal temperatures, and scavenging period is 15 ~ 30s.For the present invention will be further described; below enumerate embodiment to be further elaborated the present invention; but protection scope of the present invention is not only confined to following examples, the those of ordinary skill of described technical field all belongs to protection scope of the present invention according to the simple change done by above content disclosed by the invention.
The present embodiment chooses the polysilicon chip of common 156 commercially available × 156mm, thickness 185 ± 20 μm, resistivity 1 ~ 3, is evenly divided into two groups by this polysilicon chip, first group is carried out secondary making herbs into wool according to the etching method (Fig. 1) of a kind of polysilicon solar cell provided by the invention, comprising:
A1) adopt the mixed acid corrosive liquid of nitric acid and hydrofluoric acid to polycrystalline silicon battery plate first time making herbs into wool (S1); Corrosive liquid is the rich nitric acid system that the mass concentration of nitric acid is greater than the mass concentration of hydrofluoric acid; As preferably, the mass concentration ratio that the present embodiment chooses nitric acid and hydrofluoric acid is 7.4:1, and reaction temperature is 7.8 DEG C, reaction time 90s;
B1) deionized water is used to carry out first time cleaning (S2) to the polycrystalline silicon battery plate after secondary making herbs into wool; As preferably, the present embodiment cleans at normal temperatures, scavenging period 15s;
C1) the mixed acid corrosive liquid of nitric acid and hydrofluoric acid is adopted to carry out second time making herbs into wool (S3) to polycrystalline silicon battery plate; Corrosive liquid is the rich hydrofluoric acid system that the mass concentration of hydrofluoric acid is greater than the mass concentration of nitric acid; As preferably, the mass concentration ratio that the present embodiment chooses nitric acid and hydrofluoric acid is 1:62, reacts at normal temperatures, reaction time 5min;
D1) deionized water is used to carry out second time cleaning (S4) to the polycrystalline silicon battery plate after secondary making herbs into wool; As preferably, the present embodiment cleans at normal temperatures, scavenging period 15s;
E1) potassium hydroxide solution is used to clean (S5) polycrystalline silicon battery plate; As preferably, it is 40mS that the present embodiment chooses potassium hydroxide conductivity at normal temperatures, cleans under normal temperature, scavenging period 20s;
F1) deionized water is used to carry out third time cleaning (S6) to polycrystalline silicon battery plate; As preferably, the present embodiment cleans at normal temperatures, scavenging period 15s;
G1) mixed acid solution of hydrochloric acid and hydrofluoric acid is used to clean (S7) polycrystalline silicon battery plate; As preferably, the hydrochloric acid of the present embodiment and the mass concentration ratio of hydrofluoric acid are 1.5:1, clean under normal temperature, scavenging period 100s;
H1) deionized water is used to carry out the 4th cleaning (S8) to polycrystalline silicon battery plate; As preferably, the present embodiment cleans at normal temperatures, scavenging period 20s;
I1) cell piece is dried (S9); As preferably, the present embodiment uses the drying of 40 DEG C, clean air dries up.
As a comparison, second group of polysilicon chip conveniently process for etching carries out a making herbs into wool, comprising:
A2) the mixed acid corrosive liquid of nitric acid and hydrofluoric acid is adopted to carry out a making herbs into wool (S1) to polycrystalline silicon battery plate.Corrosive liquid is the rich nitric acid system that the mass concentration of nitric acid is greater than the mass concentration of hydrofluoric acid; The mass concentration ratio that the present embodiment chooses nitric acid and hydrofluoric acid is 7.4:1, and reaction temperature is 7.8 DEG C, reaction time 100s;
B2) deionized water is used to carry out first time cleaning (S3) to the polycrystalline silicon battery plate after a making herbs into wool; The present embodiment cleans at normal temperatures, scavenging period 15s;
C2) potassium hydroxide solution is used to clean (S4) polycrystalline silicon battery plate; It is 40mS that the present embodiment chooses potassium hydroxide conductivity at normal temperatures, cleans under normal temperature, scavenging period 20s;
D2) deionized water is used to carry out second time cleaning (S5) to polycrystalline silicon battery plate; The present embodiment cleans at normal temperatures, scavenging period 15s;
E2) mixed acid solution of hydrochloric acid and hydrofluoric acid is used to clean (S6) polycrystalline silicon battery plate; The hydrochloric acid of the present embodiment and the mass concentration ratio of hydrofluoric acid are 1.5:1, clean under normal temperature, scavenging period 100s;
F2) deionized water is used to carry out third time cleaning (S7) to polycrystalline silicon battery plate; The present embodiment cleans at normal temperatures, scavenging period 20s;
G2) cell piece is dried (S8); The present embodiment uses the drying of 40 DEG C, clean air dries up.
Through the above-mentioned making herbs into wool step of the present embodiment, as shown in Figure 2, the matte displaing micro picture of second group of polycrystalline silicon battery plate as shown in Figure 3 for the matte displaing micro picture of first group of polycrystalline silicon battery plate; As seen from the figure, the matte prepared by secondary etching method provided by the invention is utilized to have obviously different from a conventional etching method, the hole, suede corrosion hole of preparing according to secondary etching method provided by the invention is less, have the compound suede structure of micrometer-submicrometer, reflectivity is 9.4%(Fig. 4 lower than a conventional making herbs into wool also).
After drying up, flow into that later process is carried out spreading, etch, PECVD, silk screen printing, sintering test; Electrical performance data contrast is as shown in the table:
Application prospect is huge.
Claims (7)
1. an etching method for polysilicon solar battery slice, is characterized in that the mixed acid corrosive liquid adopting specific proportioning, carries out twice making herbs into wool according to following steps, and described mixed acid etchant solution is mixed by HNO3, HF and H2O and forms:
A. use the mixed acid corrosive liquid of rich nitric acid system to carry out first time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of nitric acid is greater than the mass concentration of hydrofluoric acid;
B. deionized water is used to clean to the polysilicon solar battery slice after step A making herbs into wool;
C. use the mixed acid corrosive liquid of rich hydrofluoric acid system to carry out second time making herbs into wool to polysilicon solar battery slice, in described mixed acid corrosive liquid, the mass concentration of hydrofluoric acid is greater than the mass concentration of nitric acid.
2. the etching method of a kind of polysilicon solar battery slice according to claim 1, is characterized in that the mass concentration ratio of nitric acid and hydrofluoric acid in mixed acid etchant solution in described step A is 5.5:1 ~ 9:1.
3. the etching method of a kind of polysilicon solar battery slice according to claim 1, is characterized in that the mass concentration ratio of nitric acid and hydrofluoric acid in mixed acid etchant solution in described step C is 1:50 ~ 1:100.
4. the etching method of a kind of polysilicon solar battery slice according to claim 1, when it is characterized in that making herbs into wool in described step A, reaction temperature is 6 ~ 10 DEG C; Reaction time is 80 ~ 120s.
5. the etching method of a kind of polysilicon solar battery slice according to claim 1, when it is characterized in that making herbs into wool in described step C, reaction is carried out at normal temperatures; Reaction time is 3 ~ 10min.
6. the etching method of a kind of polysilicon solar battery slice according to claim 1, after it is characterized in that described step C making herbs into wool completes, also needs to carry out following steps technique and processes:
D. with deionized water, second time cleaning is carried out to cell piece;
E. with potassium hydroxide solution, cell piece is cleaned;
F. with deionized water, third time cleaning is carried out to cell piece;
G. with the mixed solution of hydrofluoric acid and hydrochloric acid, cell piece is cleaned;
H. with deionized water, the 4th cleaning is carried out to cell piece;
I. cell piece is dried.
7. the etching method of a kind of polysilicon solar battery slice according to claim 6, it is characterized in that first time that described deionized water carries out, for the second time, for the third time, the 4th cleaning carry out all at normal temperatures, scavenging period is 15 ~ 30s.
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Cited By (3)
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| CN106684174A (en) * | 2016-12-22 | 2017-05-17 | 浙江大学 | Surface texturing method of polycrystalline silicon chips |
| CN109148262A (en) * | 2018-07-23 | 2019-01-04 | 横店集团东磁股份有限公司 | A kind of cleaning method of the black silicon wafer of solar energy polycrystal |
| CN114695591A (en) * | 2020-12-25 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
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| CN102212885A (en) * | 2011-04-27 | 2011-10-12 | 江阴浚鑫科技有限公司 | Texturing method for polycrystalline silicon solar cells |
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| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
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| CN109148262A (en) * | 2018-07-23 | 2019-01-04 | 横店集团东磁股份有限公司 | A kind of cleaning method of the black silicon wafer of solar energy polycrystal |
| CN109148262B (en) * | 2018-07-23 | 2020-09-01 | 横店集团东磁股份有限公司 | Cleaning method of solar polycrystalline black silicon wafer |
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