CN102185035A - Process for preparing crystalline silicon solar cell by secondary texturing method - Google Patents
Process for preparing crystalline silicon solar cell by secondary texturing method Download PDFInfo
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- CN102185035A CN102185035A CN2011101139003A CN201110113900A CN102185035A CN 102185035 A CN102185035 A CN 102185035A CN 2011101139003 A CN2011101139003 A CN 2011101139003A CN 201110113900 A CN201110113900 A CN 201110113900A CN 102185035 A CN102185035 A CN 102185035A
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- wool
- making herbs
- silicon chip
- passivation
- silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for preparing a crystalline silicon solar cell. The method specifically comprises the following steps of: 1) performing wet texturing, and performing reactive ion etching, passivation and deionization for secondary texturing; and 2) diffusing a silicon chip obtained by the step 1), and sequentially performing edge etching, removal of phosphorosilicate glass, hydrogen passivation, deposition of a silicon nitride film, silk screening of cathode, anode and back aluminum, and sintering. In the method for preparing the crystalline silicon solar cell, the method for prolonging the optical distance of light in crystalline silicon and reducing light reflection loss is mainly provided; and the crystalline silicon chip prepared by the method provided by the invention has relatively lower surface reflectivity, and the hydrogen passivation performed before the deposition of the silicon nitride film can reduce silicon dangling bonds, form Si-H, reduce surface states, increase short-circuit current and fulfill the aim of improving the conversion efficiency.
Description
Technical field
The present invention relates to the solar cell manufacture technology field, be specifically related to the technology that a kind of secondary making herbs into wool legal system is equipped with crystal silicon solar energy battery.
Background technology
In various solar cells, crystal silicon cell is always in occupation of most important status.In recent years, crystal-silicon solar cell raise the efficiency and reduce cost aspect obtained great achievement and progress, further improved its superiority in following photovoltaic industry.Silicon chip directly has influence on Solar cell performance to the power of the albedo of sunlight, is silicon chip making herbs into wool process and directly influence silicon chip in solar cell is made to the step of the albedo of sunlight.Existing etching method mainly is to adopt a large amount of chemical reagent and water sources to clean, the most chemical reagent that adopts in the conventional method so all can bring sizable pollution and danger to operator and environment, also having a kind of surface treatment method relatively more commonly used is to adopt chemical reagent that silicon chip is carried out adopting the processing method of annealing again after the passivation, the shortcoming of this method is to have improved production cost also to have increased processing step simultaneously, and these two kinds of etching methods are not highly effective to the reduction of the surface recombination rate of silicon chip.The novel crystal silicon solar cell process for etching that the present invention has adopted wet-method etching and dry method making herbs into wool to combine can effectively reduce the reflectivity of silicon chip, also can reduce the surface recombination rate of silicon chip simultaneously, improves the transformation efficiency of battery.
Summary of the invention
The objective of the invention is to provide a kind of secondary making herbs into wool legal system to be equipped with the technology of crystal silicon solar energy battery, adopt this method making herbs into wool can increase the light path of light in the crystalline silicon body, reduce the light reflection loss, improve the transformation efficiency of battery.
A kind of secondary making herbs into wool legal system of the present invention is equipped with the technical scheme of the process using of crystal silicon solar energy battery, and step comprises:
1. a making herbs into wool is carried out chemical corrosion removal surface of crystalline silicon affected layer with silicon chip, carries out wet-method etching and chemical cleaning then;
2. secondary making herbs into wool and passivation are passed through reactive ion etching (RIE) again with above-mentioned silicon chip and are carried out secondary making herbs into wool;
3. the silicon chip after the secondary making herbs into wool carries out passivation successively, removes steps such as ion, diffusion, edge insulation, dephosphorization silex glass, hydrogen passivation and silicon nitride film, silk screen printing, sintering.
Acid or alkaline concentration that the 1. middle wet-method etching of step is used are 1 ~ 15%.
The 2. middle reactive ion etching concrete steps of step are to adopt (the CF of reactive ion etching system that contains fluorine ion and oxonium ion
4+ O
2), reaction condition is gas: CF
4(50 ~ 100sccm)+O
2(5 ~ 10sccm); Power: 100 ~ 300W; Pressure: 10 ~ 100Pa; Etch period: 30 ~ 300 s.
Step is after passivating process is reactive ion etching in 3., silicon chip placed fill 1 ~ 10% hydrofluoric acid, and reaction time 30 ~ 100s removes the oxide layer on the silicon chip surface and forms the processing procedure of si-h bond.
Step is removed the ion process in 3. for the silicon chip after the passivation being placed the solution that fills 5 ~ 20% hydrochloric acid, and reaction time 100 ~ 300s removes the cleaning process that remains in metal ion on the silicon chip surface.
The 3. middle hydrogen passivation time of step is at 300 ~ 1000s.Before the pecvd process silicon nitride film is adopted in the hydrogen passivation exactly, feed the silane that is easy to ionization earlier and generate hydrogen ion, form Si-H, reduce the silicon dangling bonds, reduce surface state, improve short circuit current, reach the purpose that improves transformation efficiency.
The invention has the beneficial effects as follows: the technology that a kind of secondary making herbs into wool legal system of the present invention is equipped with crystal silicon solar energy battery chemical corrosion is at first according to a conventional method removed the surface of crystalline silicon affected layer, wet-method etching and chemical cleaning are carried out secondary making herbs into wool through reactive ion etching again; Adopt this method making herbs into wool can not cause damage and defective to silicon chip, the fragmentation rate is low, can also increase the light path of light in the crystalline silicon body, reduces the light reflection loss.Silicon chip after the making herbs into wool carries out passivation subsequently, removes steps such as ion, diffusion, edge insulation, dephosphorization silex glass, hydrogen passivation and silicon nitride film, silk screen printing, sintering.Passivation, removal ion step be the foreign ion of cleaning silicon chip remained on surface thoroughly, has prevented to clean the negative effect that thoroughly battery performance is not caused because of foreign ion; Hydrogen passivation before the deposited silicon nitride membrane process can reduce the silicon dangling bonds, forms Si-H, reduces surface state, improves short circuit current, reaches the purpose that improves transformation efficiency.The present invention not only is fit to various crystal silicon cells, can effectively improve the conversion efficiency of solar cell, is applicable to commercial Application.
The novel crystal silicon solar cell process for etching that the present invention has adopted wet-method etching and dry method making herbs into wool to combine, the wet-method etching processing step formerly that adopts, the effect of wet-method etching has two, and the one, silicon chip surface is cleaned, the 2nd, silicon chip surface is corroded making herbs into wool; The present invention can effectively reduce the reflectivity of silicon chip, also can reduce the surface recombination rate of silicon chip simultaneously, improves the transformation efficiency of battery.
Embodiment:
In order to understand the present invention better, below in conjunction with example technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1:
Select polysilicon chip; Silicon chip adopts the (CF of reactive ion etching system that contains fluorine ion and oxonium ion again through conventional cleaning and sour making herbs into wool
4+ O
2), reaction condition is gas: CF
4(80sccm)+O
2(8sccm); Power: 180W; Pressure: 30Pa; Etch period: 260 s.After the etching silicon chip placed successively and fill 2% hydrofluoric acid, reaction 80s; Place the solution that fills 15% hydrochloric acid, reaction 150s; After adopting diffusion, edge insulation, dephosphorization silex glass more successively afterwards; Adopt pecvd process to feed the silane that is easy to ionization earlier and generate hydrogen ion, pass through silicon nitride film, silk screen printing, sintering behind the passivation time 1000s again, obtain the finished product solar battery sheet.
Embodiment 2:
Select the p type single crystal silicon sheet; Silicon chip adopts the (CF of reactive ion etching system that contains fluorine ion and oxonium ion again through conventional cleaning and alkali making herbs into wool
4+ O
2), reaction condition is gas: CF
4(100sccm)+O
2(9sccm); Power: 230W; Pressure: 80Pa; Etch period: 90 s.After the etching silicon chip placed successively and fill 8% hydrofluoric acid, reaction 30s; Place the solution that fills 10% hydrochloric acid, reaction 200s; After adopting diffusion, edge insulation, dephosphorization silex glass more successively afterwards; Adopt pecvd process to feed the silane that is easy to ionization earlier and generate hydrogen ion, passivation time is to pass through silicon nitride film, silk screen printing, sintering behind 600s again, obtains the finished product solar battery sheet.
Embodiment 3:
Select the n type single crystal silicon sheet; Silicon chip adopts the (CF of reactive ion etching system that contains fluorine ion and oxonium ion again through conventional cleaning and alkali making herbs into wool
4+ O
2), reaction condition is gas: CF
4(60sccm)+O
2(5sccm); Power: 100W; Pressure: 100Pa; Etch period: 200 s.After the etching silicon chip placed successively and fill 5% hydrofluoric acid, reaction 60s; Place the solution that fills 5% hydrochloric acid, reaction 260s; After adopting diffusion, edge insulation, dephosphorization silex glass more successively afterwards; Adopt pecvd process to feed the silane that is easy to ionization earlier and generate hydrogen ion, passivation time is to pass through silicon nitride film, silk screen printing, sintering behind 800s again, obtains the finished product solar battery sheet.
Claims (6)
1. a secondary making herbs into wool legal system is equipped with the technology of crystal silicon solar energy battery, and step comprises:
1. a making herbs into wool is carried out chemical corrosion removal surface of crystalline silicon affected layer with silicon chip, carries out wet-method etching and chemical cleaning then;
2. secondary making herbs into wool and passivation are carried out secondary making herbs into wool through reactive ion etching again with above-mentioned silicon chip;
3. the silicon chip after the secondary making herbs into wool carries out passivation successively, removes steps such as ion, diffusion, edge insulation, dephosphorization silex glass, hydrogen passivation and silicon nitride film, silk screen printing, sintering.
2. a kind of secondary making herbs into wool legal system according to claim 1 is equipped with the technology of crystal silicon solar energy battery, it is characterized in that: acid or alkaline concentration that the 1. middle wet-method etching of step is used are 1 ~ 15%.
3. a kind of secondary making herbs into wool legal system according to claim 1 is equipped with the technology of crystal silicon solar energy battery, it is characterized in that: the 2. middle reactive ion etching concrete steps of step are, employing contains the reactive ion etching system of fluorine ion and oxonium ion, and reaction condition is gas: the CF of 50 ~ 100sccm
4O with 5 ~ 10sccm
2Power: 100 ~ 300W; Pressure: 10 ~ 100Pa; Etch period: 30 ~ 300 s.
4. a kind of secondary making herbs into wool legal system according to claim 1 is equipped with the technology of crystal silicon solar energy battery, it is characterized in that: the 3. middle silicon chip of step carries out passivation, after process is reactive ion etching, silicon chip placed fill 1 ~ 10% hydrofluoric acid, reaction time 30 ~ 100s removes the oxide layer on the silicon chip surface and forms the processing procedure of si-h bond.
5. a kind of secondary making herbs into wool legal system according to claim 1 is equipped with the technology of crystal silicon solar energy battery, it is characterized in that: step is removed the ion process in 3. for the silicon chip after the passivation being placed the solution that fills 5 ~ 20% hydrochloric acid, reaction time 100 ~ 300s removes the cleaning process that remains in metal ion on the silicon chip surface.
6. a kind of secondary making herbs into wool legal system according to claim 1 is equipped with the technology of crystal silicon solar energy battery, it is characterized in that: the 3. middle hydrogen passivation time of step is at 300 ~ 1000s.
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| CN2011101139003A CN102185035B (en) | 2011-05-04 | 2011-05-04 | Process for preparing crystalline silicon solar cell by secondary texturing method |
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| CN102185035B CN102185035B (en) | 2013-03-06 |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321919A (en) * | 2011-09-23 | 2012-01-18 | 中国科学院微电子研究所 | Method for preparing monocrystal cuboid carbon nitride film |
| CN102779907A (en) * | 2012-08-14 | 2012-11-14 | 常州天合光能有限公司 | Method for preparing high-efficiency heterojunction cells |
| CN103022253A (en) * | 2012-12-21 | 2013-04-03 | 浙江正泰太阳能科技有限公司 | Solar battery and manufacturing method thereof |
| CN103165730A (en) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | Solar battery passivating and manufacturing method |
| CN103400901A (en) * | 2013-08-12 | 2013-11-20 | 江苏宇兆能源科技有限公司 | Etching technology of twice etching on surface of solar battery |
| CN103715310A (en) * | 2014-01-20 | 2014-04-09 | 常熟苏大低碳应用技术研究院有限公司 | Method for passivating polycrystalline silicon wafer for solar cell |
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN103849937A (en) * | 2012-11-29 | 2014-06-11 | 韩化石油化学株式会社 | Texturing method of solar cell wafer |
| CN104835879A (en) * | 2015-05-30 | 2015-08-12 | 润峰电力有限公司 | Texturing method of polysilicon solar cell |
| CN105702760A (en) * | 2016-04-11 | 2016-06-22 | 徐州同鑫光电科技股份有限公司 | Fabrication method for texture surface of solar cell |
| CN106653949A (en) * | 2016-12-29 | 2017-05-10 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN111048628A (en) * | 2019-12-27 | 2020-04-21 | 天津爱旭太阳能科技有限公司 | Preparation method of P-type monocrystalline silicon wafer |
| CN111081797A (en) * | 2019-12-31 | 2020-04-28 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| CN111180550A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | Preparation method of N-type monocrystalline silicon wafer |
| CN111943520A (en) * | 2020-08-12 | 2020-11-17 | 中国科学院半导体研究所 | High-haze glass substrate, preparation method and thin-film solar cell |
| CN116885046A (en) * | 2023-09-07 | 2023-10-13 | 无锡松煜科技有限公司 | Monocrystalline silicon slice texturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000244A1 (en) * | 2000-04-11 | 2002-01-03 | Zaidi Saleem H. | Enhanced light absorption of solar cells and photodetectors by diffraction |
| US20040152326A1 (en) * | 2003-01-28 | 2004-08-05 | Kyocera Corporation | Multicrystalline silicon substrate and process for roughening surface thereof |
| CN101478013A (en) * | 2008-12-30 | 2009-07-08 | 无锡尚德太阳能电力有限公司 | Method for producing solar cell silicon wafer suede by reactive ion etching and solar cell produced thereby |
| CN101609862A (en) * | 2009-07-20 | 2009-12-23 | 欧贝黎新能源科技股份有限公司 | A kind of method that reduces surface reflectivity of texture mono-crystalline silicon chip |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
-
2011
- 2011-05-04 CN CN2011101139003A patent/CN102185035B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000244A1 (en) * | 2000-04-11 | 2002-01-03 | Zaidi Saleem H. | Enhanced light absorption of solar cells and photodetectors by diffraction |
| US20040152326A1 (en) * | 2003-01-28 | 2004-08-05 | Kyocera Corporation | Multicrystalline silicon substrate and process for roughening surface thereof |
| CN101478013A (en) * | 2008-12-30 | 2009-07-08 | 无锡尚德太阳能电力有限公司 | Method for producing solar cell silicon wafer suede by reactive ion etching and solar cell produced thereby |
| CN101609862A (en) * | 2009-07-20 | 2009-12-23 | 欧贝黎新能源科技股份有限公司 | A kind of method that reduces surface reflectivity of texture mono-crystalline silicon chip |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321919A (en) * | 2011-09-23 | 2012-01-18 | 中国科学院微电子研究所 | Method for preparing monocrystal cuboid carbon nitride film |
| CN103165730A (en) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | Solar battery passivating and manufacturing method |
| CN102779907A (en) * | 2012-08-14 | 2012-11-14 | 常州天合光能有限公司 | Method for preparing high-efficiency heterojunction cells |
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN103849937A (en) * | 2012-11-29 | 2014-06-11 | 韩化石油化学株式会社 | Texturing method of solar cell wafer |
| CN103849937B (en) * | 2012-11-29 | 2016-08-17 | 韩化石油化学株式会社 | The surface treatment method of substrate used for solar batteries |
| CN103022253A (en) * | 2012-12-21 | 2013-04-03 | 浙江正泰太阳能科技有限公司 | Solar battery and manufacturing method thereof |
| CN103022253B (en) * | 2012-12-21 | 2015-11-04 | 浙江正泰太阳能科技有限公司 | A kind of solar cell and preparation method thereof |
| CN103400901B (en) * | 2013-08-12 | 2016-02-24 | 江苏宇兆能源科技有限公司 | A kind of anticaustic process for etching of solar cell surface |
| CN103400901A (en) * | 2013-08-12 | 2013-11-20 | 江苏宇兆能源科技有限公司 | Etching technology of twice etching on surface of solar battery |
| CN103715310A (en) * | 2014-01-20 | 2014-04-09 | 常熟苏大低碳应用技术研究院有限公司 | Method for passivating polycrystalline silicon wafer for solar cell |
| CN103715310B (en) * | 2014-01-20 | 2016-05-11 | 常熟苏大低碳应用技术研究院有限公司 | A kind of deactivating process for the treatment of of polycrystalline silicon used for solar battery sheet |
| CN104835879A (en) * | 2015-05-30 | 2015-08-12 | 润峰电力有限公司 | Texturing method of polysilicon solar cell |
| CN105702760A (en) * | 2016-04-11 | 2016-06-22 | 徐州同鑫光电科技股份有限公司 | Fabrication method for texture surface of solar cell |
| CN106653949A (en) * | 2016-12-29 | 2017-05-10 | 浙江晶科能源有限公司 | Solar cell and preparation method thereof |
| CN111048628A (en) * | 2019-12-27 | 2020-04-21 | 天津爱旭太阳能科技有限公司 | Preparation method of P-type monocrystalline silicon wafer |
| CN111180550A (en) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | Preparation method of N-type monocrystalline silicon wafer |
| CN111081797A (en) * | 2019-12-31 | 2020-04-28 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| CN111081797B (en) * | 2019-12-31 | 2021-04-27 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| CN111943520A (en) * | 2020-08-12 | 2020-11-17 | 中国科学院半导体研究所 | High-haze glass substrate, preparation method and thin-film solar cell |
| CN116885046A (en) * | 2023-09-07 | 2023-10-13 | 无锡松煜科技有限公司 | Monocrystalline silicon slice texturing method |
| CN116885046B (en) * | 2023-09-07 | 2023-11-17 | 无锡松煜科技有限公司 | Monocrystalline silicon slice texturing method |
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