CN204167329U - Metallurgy polycrystalline silicon solar battery sheet and solar panel - Google Patents
Metallurgy polycrystalline silicon solar battery sheet and solar panel Download PDFInfo
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- CN204167329U CN204167329U CN201420650161.0U CN201420650161U CN204167329U CN 204167329 U CN204167329 U CN 204167329U CN 201420650161 U CN201420650161 U CN 201420650161U CN 204167329 U CN204167329 U CN 204167329U
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- polycrystalline silicon
- solar battery
- battery sheet
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- metallurgy polycrystalline
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model provides a kind of metallurgy polycrystalline silicon solar battery sheet and solar panel, surface matte formed by corrosion making herbs into wool of described metallurgy polycrystalline silicon solar battery sheet, described matte has multiple etch pit, the degree of depth of described multiple etch pit is 3.0 ~ 3.6 μm, and length is 4.94 ~ 6.63 μm.Metallurgy polycrystalline silicon solar battery sheet of the present utility model, combine the feature of metallurgy polycrystalline silicon self and corresponding process for etching, the metallurgy polycrystalline silicon sheet after phosphorus gettering is made to erode away the higher matte of quality, polysilicon chip surface corrosion forms evenly moderate corrosion pit, obtained solar battery sheet surface light trapping structure is good, appearance uniform and surface reflectivity is low, reduces reverse leakage current, improves the photoelectric conversion efficiency of solar battery sheet simultaneously.
Description
Technical field
The utility model relates to technical field of solar utilization technique, particularly a kind of metallurgy polycrystalline silicon solar battery sheet and have the solar panel of this metallurgy polycrystalline silicon solar battery sheet.
Background technology
Physical Metallurgy polycrystalline silicon purifying technology, has that purification production capacity is large, production technology is simple, purifying technique and advantages of environment protection.Through the effort of nearly ten years, this technology was significantly improved.See according to the data grasped, reached 6.0N-6.5N level by the polysilicon purity that Physical Metallurgy technology is purified, the small lot batch manufacture of existing enterprise.
Physical Metallurgy method purifying polycrystalline silicon, utilizes the technology of metallurgy method, directly the base boron in silicon can be purified to the level of solar energy level silicon.There is not chemical reaction in purification process, so compared with chemical method purified silicon, the concentration of base boron is slightly high, metal and transition metal impurity content also higher, cause the polysilicon minority carrier life time of purification lower, the battery efficiency produced is lower and leakage current is larger.
Fig. 1 is the structural representation of conventional original polysilicon silicon chip, and the surface of polysilicon silicon chip 101 only has the very thin oxide layer 102 of self-sow.Fig. 2 is the structural representation of the polysilicon silicon chip after phosphorus gettering, after the high-temperature process of phosphorus gettering process, the phosphorous silicon dioxide layer 202 (being commonly called as silica glass layer) that the superficial growth of polysilicon silicon chip 201 one deck is thicker, silicon dioxide layer 202 also contains a large amount of impurity as copper, iron and aluminium etc., and structure and composition all there occurs change.
With conventional acid corrosion, surface wool manufacturing is carried out to the Physical Metallurgy polysilicon chip through phosphorus gettering, because technique is not mated, bad effect can be produced, the pit distribution produced as surface corrosion is uneven, corrosion pit depth is obviously not equal, thus to fall into light effect poor on the solar battery sheet causing obtaining surface, battery short circuit electric current, photoelectric conversion efficiency all reduce, and reverse leakage current increases, the overall acceptability rate of Physical Metallurgy polycrystalline silicon battery plate is lower.After tested, the surface reflectivity of obtained like this silicon chip is up to more than 27.0%.
Summary of the invention
The purpose of this utility model is to provide a kind of metallurgy polycrystalline silicon solar battery sheet, to solve the technical problem that surface reflectivity is high and surperficial sunken light effect is poor that in prior art, solar battery sheet exists.
Another object of the present utility model is to provide a kind of solar panel with the utility model metallurgy polycrystalline silicon solar battery sheet.
For achieving the above object, the technical solution of the utility model is as follows:
A kind of metallurgy polycrystalline silicon solar battery sheet, surface matte formed by corrosion making herbs into wool of described metallurgy polycrystalline silicon solar battery sheet, described matte has multiple etch pit, and the degree of depth of described multiple etch pit is 3.0 ~ 3.6 μm separately, and length is 4.94 ~ 6.63 μm separately.
In an execution mode of metallurgy polycrystalline silicon solar battery sheet of the present utility model, the width of described multiple etch pit is 1.41 ~ 1.43 μm separately.
In another execution mode of metallurgy polycrystalline silicon solar battery sheet of the present utility model, the surface reflectivity of described metallurgy polycrystalline silicon solar battery sheet is 24%-25.6%.
In another execution mode of metallurgy polycrystalline silicon solar battery sheet of the present utility model, the silicon chip of described metallurgy polycrystalline silicon solar battery sheet is the polysilicon silicon chip that metallurgy method is purified.
In another execution mode of metallurgy polycrystalline silicon solar battery sheet of the present utility model, the silicon chip of described metallurgy polycrystalline silicon solar battery sheet is the metallurgy polycrystalline silicon sheet after the process of middle high temperature phosphorous gettering.
In solar panel of the present utility model, be packaged with metallurgy polycrystalline silicon solar battery sheet of the present utility model.
The beneficial effects of the utility model are, metallurgy polycrystalline silicon solar battery sheet of the present utility model, combine the feature of metallurgy polycrystalline silicon self and corresponding process for etching, corrosion resistant metallurgy polycrystalline silicon is made to erode away the higher matte of quality, polysilicon chip surface corrosion forms evenly moderate corrosion pit, and obtained solar battery sheet surface light trapping structure is good, appearance uniform and surface reflectivity is low, reduce reverse leakage current, improve the photoelectric conversion efficiency of solar battery sheet simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of original polysilicon silicon chip;
Fig. 2 is the structural representation of the polysilicon silicon chip after phosphorus gettering;
Fig. 3 is the structural representation of the polysilicon silicon chip after excessive erosion making herbs into wool;
Fig. 4 is the surperficial SEM figure of polysilicon silicon chip of the present utility model;
Fig. 5 is the surperficial SEM figure of polysilicon silicon chip of the present utility model.
Wherein, description of reference numerals is as follows:
101,201,301: polysilicon
102: original oxide layer
202: the oxide layer after phosphorus gettering
302: etch pit
Embodiment
According to specific embodiment, the technical solution of the utility model is described further below.Protection range of the present utility model is not limited to following examples, enumerates these examples and only limits the utility model never in any form for exemplary purpose.
The solar panel of the utility model embodiment, is packaged with the metallurgy polycrystalline silicon solar battery sheet of the utility model embodiment.But the application of metallurgy polycrystalline silicon solar battery sheet of the present utility model is not limited to solar panel, and can be applied on other solar cell goods.
Lower mask body introduces the metallurgy polycrystalline silicon solar battery sheet of the utility model preferred embodiment.
As shown in Figure 3, the metallurgy polycrystalline silicon solar battery sheet of the utility model embodiment, the polysilicon silicon chip that its silicon chip 301 is purified for metallurgy method, matte is formed on silicon chip 301 surface in corrosion making herbs into wool process, namely etch pit 302 of uniform size is eroded away, Fig. 4 and Fig. 5 is the surface topography of the metallurgy polycrystalline silicon cell piece that scanning electron microscopy provides, visible silicon chip 301 surface is formed evenly, the etching tank hole 302 that the degree of depth is moderate, play good anti-reflective effect, the reflectivity on metallurgy polycrystalline silicon cell piece surface is made to be down to 24%-25.6% (650nm) from more than 27%.
The length of etch pit 302 is 4.94-6.63 μm, and width is 1.41-1.43 μm, and the degree of depth is 3.0-3.6 μm, and namely after corrosion, the amount of thickness reduction on silicon chip 301 surface is 3.0-3.6 μm.
Etch pit 302 size is even, and its length dimension difference is less, is beneficial to and forms more corrosion pit, so just can increase the multiple reflections of incident ray, refraction probability, improve the re-absorption effect ability of solar battery sheet effects on surface light.
Above-mentioned metallurgy polycrystalline silicon solar battery sheet silicon chip used is the polysilicon silicon chip that metallurgy method is purified, the metallurgy polycrystalline silicon sheet particularly after middle high temperature phosphorous gettering.
Below production technology and the technological parameter of metallurgy polycrystalline silicon solar battery sheet of the present utility model is introduced again:
In corrosion making herbs into wool process, reaction temperature can be controlled in 6 ~ 7 DEG C, and etchant solution is hydrofluoric acid (HF), nitric acid (HNO
3) and the mixed solution of water, the speed of corrosion is 1.25-1.35m/min (line speed), thus controls the thinning single surface amount of silicon chip at 3.0-3.6 μm/sheet.
The mode of twice corrosion can be adopted to carry out process for etching, and such as first time corrosion adopts HF:HNO
3: H
2the mixed solution of O=1:5:2.76, adopts rinsed with deionized water afterwards, then washes away the porous silicon layer of silicon chip surface with the potassium hydroxide solution of alkaline solution if mass fraction is 7%-8%, then carries out rinsing with deionized water;
Adopt HF:HCL:H subsequently
2the mixed solution of O=1:2:2.3 carries out second time corrosion, to remove surface metal ion, carries out rinsing more afterwards and dry with deionized water.
Carry out process for etching in the mode of above-mentioned example, can avoid because pits deepen appears in excessive corrosion, cause battery PN junction leak electricity and affect cell integrated qualification rate, or because corroding deficiency, the too shallow and problems such as anti-reflective effect difference of pit.
Metallurgy polycrystalline silicon solar battery sheet of the present utility model, combine the feature of metallurgy polycrystalline silicon self and corresponding process for etching, metallurgy polycrystalline silicon after phosphorus gettering is eroded away the higher matte of quality, polysilicon chip surface corrosion forms evenly moderate corrosion pit, obtained solar battery sheet surface light trapping structure is good, appearance uniform and surface reflectivity is low, reduces reverse leakage current, improves the photoelectric conversion efficiency of solar battery sheet simultaneously.
For 8 inches of (156mm × 156mm) specifications, metallurgy polycrystalline silicon solar battery sheet of the present utility model, surface reflectivity is down to 24%-25.6% (650nm) from more than 27%, open circuit voltage increases 0.8%-1.2%, short circuit current adds 2.0%-3.7%, reverse leakage current reduces 60%-80%, and cell integrated performance has greatly improved, and the average light photoelectric transformation efficiency of solar battery sheet brings up to more than 17.40% simultaneously.
Those skilled in the art it should be noted that the execution mode described by the utility model is only exemplary, can make other replacements various, changes and improvements in scope of the present utility model.Thus, the utility model is not limited to above-mentioned execution mode, and is only defined by the claims.
Claims (6)
1. a metallurgy polycrystalline silicon solar battery sheet, it is characterized in that, surface matte formed by corrosion making herbs into wool of described metallurgy polycrystalline silicon solar battery sheet, described matte has multiple etch pit, the degree of depth of described multiple etch pit is 3.0 ~ 3.6 μm, and length is 4.94 ~ 6.63 μm.
2. metallurgy polycrystalline silicon solar battery sheet according to claim 1, is characterized in that, the width of described multiple etch pit is 1.41 ~ 1.43 μm.
3. metallurgy polycrystalline silicon solar battery sheet according to claim 1, is characterized in that, the surface reflectivity of described metallurgy polycrystalline silicon solar battery sheet is 24%-25.6%.
4. metallurgy polycrystalline silicon solar battery sheet according to any one of claim 1 to 3, is characterized in that, the silicon chip of described metallurgy polycrystalline silicon solar battery sheet is the polysilicon silicon chip that metallurgy method is purified.
5. metallurgy polycrystalline silicon solar battery sheet according to claim 4, is characterized in that, the silicon chip of described metallurgy polycrystalline silicon solar battery sheet is the metallurgy polycrystalline silicon sheet after the process of middle high temperature phosphorous gettering.
6. a solar panel, is characterized in that, is packaged with arbitrary described metallurgy polycrystalline silicon solar battery sheet in claim 1-5 in described solar panel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420650161.0U CN204167329U (en) | 2014-11-03 | 2014-11-03 | Metallurgy polycrystalline silicon solar battery sheet and solar panel |
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| CN201420650161.0U CN204167329U (en) | 2014-11-03 | 2014-11-03 | Metallurgy polycrystalline silicon solar battery sheet and solar panel |
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| CN204167329U true CN204167329U (en) | 2015-02-18 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538936A (en) * | 2018-03-15 | 2018-09-14 | 江苏大学 | A kind of method that polysilicon chip and its surface earthworm shape etch pit are formed |
| CN109131881A (en) * | 2018-08-21 | 2019-01-04 | 鲍灵杰 | A kind of unmanned dispatching aircraft |
| CN109980043A (en) * | 2019-02-27 | 2019-07-05 | 镇江仁德新能源科技有限公司 | A kind of efficient volume production preparation method of the black silicon wafer of wet process |
-
2014
- 2014-11-03 CN CN201420650161.0U patent/CN204167329U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538936A (en) * | 2018-03-15 | 2018-09-14 | 江苏大学 | A kind of method that polysilicon chip and its surface earthworm shape etch pit are formed |
| CN109131881A (en) * | 2018-08-21 | 2019-01-04 | 鲍灵杰 | A kind of unmanned dispatching aircraft |
| CN109980043A (en) * | 2019-02-27 | 2019-07-05 | 镇江仁德新能源科技有限公司 | A kind of efficient volume production preparation method of the black silicon wafer of wet process |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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