CN102593263A - Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid - Google Patents
Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid Download PDFInfo
- Publication number
- CN102593263A CN102593263A CN2012100738168A CN201210073816A CN102593263A CN 102593263 A CN102593263 A CN 102593263A CN 2012100738168 A CN2012100738168 A CN 2012100738168A CN 201210073816 A CN201210073816 A CN 201210073816A CN 102593263 A CN102593263 A CN 102593263A
- Authority
- CN
- China
- Prior art keywords
- crystalline silicon
- type crystalline
- emitter junction
- preparation
- corrosive liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of an N-type crystalline silicon back emitter junction solar battery and corrosive liquid. The preparation method comprises the following steps of adopting the corrosive liquid to conduct chemical thinning on an N-type crystalline silicon sheet and enabling the thickness to be reduced to 50-150 mum, and then using a standard process to prepare the solar battery. The corrosive liquid used in the preparation method of the N-type crystalline silicon back emitter junction solar battery is further disclosed. The corrosive liquid is composed of nitric acid, hydrofluoric acid, water and/or acetic acid. The N-type crystalline silicon back emitter junction solar battery prepared by using the method is high in battery efficiency, when the substrate material is the polycrystalline silicon sheet or low-weight monocrystalline silicon sheet, the battery efficiency is obviously promoted, related process equipment is all existing equipment on a P-type solar battery production line, no big cost needs extra investing, operation is simple, and the preparation method and the corrosive liquid are favorable for large-scale application in the photovoltaic industry.
Description
Technical field
The present invention relates to the solar cell material field, be specifically related to a kind of preparation method and employed corrosive liquid of N type crystalline silicon emitter junction solar cell.
Background technology
Solar energy is inexhaustible, nexhaustible clean energy resource, utilizes the light transfer characteristic of semi-conducting material, is prepared into solar cell, can change solar energy into electric energy.In nearest 10 years, the output of solar cell is with the speed increment of annual 30-40%, and solar energy industry has become one of industry with fastest developing speed in the market.
Present solar battery process technology mainly is based on the P type crystalline silicon as backing material; If use N type crystalline silicon material to prepare traditional preceding emitter junction solar cell; Need carry out boron diffusion; This relates to boron diffusion stove and a series of relevant device, no better than a new production line; If on original P type manufacture of solar cells line, make N type solar cell, the aluminium alloying through the back side can form back side emitter junction, and what obtain is the emitter junction solar cell; Publication number is that the patent application of CN 101150148B discloses through twice silk screen printing aluminium paste, and twice sintering separately carries out the sintering of the sintering of alusil alloy and back electrode; Solved the problem that makes electrode solderability and solderability variation owing to back side all standing aluminium; The aluminum emitter junction N type single crystal silicon solar cell can be accomplished scale production, still, for the emitter junction solar cell; The diffusion length of backing material need be three times of crystal silicon chip thickness at least; Only in this way, near the photo-generated carrier that is excited out the front surface could effectively be collected by the emitter junction of cell backside, and the standard thickness of crystal silicon chip cutting at present is 180-200 μ m; For N type polysilicon chip and low-quality n type single crystal silicon sheet; Its minority diffusion length often is difficult to reach 500-600 μ m, and the short circuit current of the emitter junction solar cell for preparing is lower, thereby causes final battery efficiency lower.
Based on N type crystalline silicon material low optical attenuation characteristic with to the advantages such as strong tolerance of transition metal; More and more received people's attention in the last few years; But existence for above-mentioned reasons makes N type crystalline silicon material be very limited in the use of area of solar cell.
Summary of the invention
The invention provides a kind of preparation method of N type crystalline silicon emitter junction solar cell, can significantly improve battery efficiency.
A kind of preparation method of N type crystalline silicon emitter junction solar cell comprises that N type crystalline silicon sheet is immersed corrosive liquid carries out chemical reduction, and then processes described N type crystalline silicon emitter junction solar cell that described corrosive liquid comprises nitric acid and hydrofluoric acid.
As preferably, described nitric acid mass fraction is 65%～68%.Described hydrofluoric acid mass fraction is 40%.
The nitric acid of suitable concn and hydrofluoric acid can influence the attenuate time in the described corrosive liquid, and nitric acid mass fraction described herein is 65%～68%, are meant before forming corrosive liquid the mass percent concentration of nitric acid self.In like manner, described hydrofluoric acid mass fraction is 40%.Be meant before forming corrosive liquid the mass percent concentration of hydrofluoric acid self.
Nitric acid and hydrofluoric acid must be contained simultaneously in the described corrosive liquid,, The addition of C H can be added if used nitric acid and hydrofluoric acid concentration are bigger
3COOH and/or water dilute.Be that described corrosive liquid also comprises CH
3COOH and/or water.This moment, described corrosive liquid was nitric acid, hydrofluoric acid and H
2O three's mixed liquor or be nitric acid, hydrofluoric acid and CH
3COOH three's mixed liquor or be nitric acid, hydrofluoric acid, H
2O and CH
3The mixed liquor of COOH.Owing to before forming corrosive liquid, contained a certain amount of water in the middle of nitric acid and the hydrofluoric acid, so water described herein is meant the water of extra interpolation.
Contain CH in the corrosive liquid
3During COOH, the same effect that can play the adjusting corrosion rate with water.
The ratio of nitric acid and hydrofluoric acid does not have particular restriction in the corrosive liquid, and for example the volume ratio of nitric acid and hydrofluoric acid can be 1: 0.01～99.
When adding CH
3When COOH and/or water, nitric acid, hydrofluoric acid, CH
3The yet ratio of COOH and water does not have particular restriction.Nitric acid, hydrofluoric acid and CH generally speaking
3The concentration of COOH is big more, and the then required attenuate time is short more, and concentration is more little, and the required attenuate time is long more, and the volume ratio at nitric acid, hydrofluoric acid and water is 1: 1: 5～7 o'clock usually, and the attenuate time is 8～10min, nitric acid, hydrofluoric acid and CH
3The volume ratio of COOH is 1: 1: 5～7 o'clock, and the attenuate time is 8～10min.
In the thinning process temperature is not had particular restriction, temperature raises, and can quicken thinning process, but increases danger and energy consumption, generally, at room temperature gets final product.
The concentration of attenuate time with the corrosive liquid selected for use also has relation, and the attenuate overlong time may cause silicon wafer thickness to cross thin and in subsequent technique, bend, and then is unfavorable for the making of N type crystalline silicon solar cell; The attenuate time, too short meeting caused thickness thinning not enough, and then near the photo-generated carrier that is excited out the front surface can not effectively be collected by the emitter junction of cell backside, did not reach the purpose that improves battery efficiency, was generally 8～10min.
Described N type crystalline silicon sheet carries out can processing described N type crystalline silicon emitter junction solar cell according to prior art behind the chemical reduction; For example described N type crystalline silicon sheet carries out carrying out surface wool manufacturing behind the chemical reduction; Form front-surface field in the front surface phosphorous diffusion successively after the cleaning; Plasma etching trimming knot, chemical cleaning dephosphorization silex glass, front surface deposited silicon nitride antireflective coating; Front surface screen-printed silver slurry, back of the body surface screen-printed aluminium paste and co-sintering are processed described N type crystalline silicon emitter junction solar cell.
Optional, described N type crystalline silicon sheet is a polysilicon chip, adopts nitric acid and hydrofluoric acid mixed solution to carry out acid surfaces making herbs into wool behind the chemical reduction.The concentration of nitric acid and hydrofluoric acid and volume ratio can be utilized prior art during acid surfaces making herbs into wool, and promptly both concentration and volume ratio all do not have particular restriction.
Optional; Described N type crystalline silicon sheet is low-quality monocrystalline silicon piece (comprising higher monocrystalline silicon piece or the higher monocrystalline silicon piece of doping content of monocrystalline silicon piece, metal concentration that contains high density dislocation or microdefect), adopts the NaOH aqueous solution or the KOH aqueous solution to carry out the alkali surface wool manufacturing behind the chemical reduction.The used NaOH aqueous solution or the mass fraction of the KOH aqueous solution are generally 20%～40%.
The present invention also provides a kind of said preparation N type crystalline silicon emitter junction solar cell method used corrosive liquid, and described corrosive liquid comprises nitric acid and hydrofluoric acid.
As preferably, described nitric acid mass fraction is 65%～68%.Described hydrofluoric acid mass fraction is 40%.
As preferably, described corrosive liquid also comprises CH
3COOH and/or water.Owing to must contain nitric acid and hydrofluoric acid simultaneously in the described corrosive liquid; If used nitric acid and hydrofluoric acid concentration are bigger; Can add suitable quantity of water dilutes; Before forming corrosive liquid, contained a certain amount of water in the middle of nitric acid and the hydrofluoric acid, so water described herein is meant the water of extra interpolation.
But contain CH in the corrosive liquid
3During COOH, can play collaborative corrosiveness.
Used nitric acid, hydrofluoric acid and CH in the corrosive liquid
3The volume ratio of COOH does not have particular restriction, and for example the volume ratio of nitric acid and hydrofluoric acid can be 1: 0.01～99.
When adding CH
3When COOH and/or water, nitric acid, hydrofluoric acid, CH
3The yet ratio of COOH and water does not have particular restriction.
The preparation method of N type crystalline silicon emitter junction solar cell of the present invention; Reduced thickness to 50～150 μ m with N type crystalline silicon sheet; Near the photo-generated carrier that is excited out the front surface is effectively collected by the emitter junction of cell backside, and solar battery efficiency is increased dramatically, and particularly uses polysilicon chip and low-quality monocrystalline silicon piece; And the process equipment that relates to all is the existing device on the P type solar cell production line; Need not extra big cost input, simple to operate, realize large-scale application in photovoltaic industry easily.
Embodiment
Embodiment 1
(1) be that the N type polysilicon chip (resistivity is 1 Ω .cm) of 200 μ m is put into nitric acid (mass fraction 65%), hydrofluoric acid (mass fraction 40%) and H with thickness
2(volume ratio is 1: 1: 7) carried out the chemical corrosion attenuate in O three's the mixed liquor.Take out after putting into 8min, measure through the spiral micrometer, the thickness of silicon chip is about 120 μ m;
(2) mixed liquor (volume ratio is 1: 3) of the silicon chip behind the attenuate being put into nitric acid (mass fraction 65%) and hydrofluoric acid (mass fraction 40%) carries out surface wool manufacturing, uses hydrofluoric acid (mass fraction 40%) pickling 5min then, with drying after the washed with de-ionized water;
(3) silicon chip after will drying is put into the phosphorous diffusion stove, and positive diffusion one deck square resistance is the phosphorus-diffused layer of 80-120 Ω, is used for the front-surface field of N type battery;
(4) utilize fluorine ion to etch away the edge diffusion layer of diffusion sheet in the plasma etcher; The use mass percent concentration is 2% hydrofluoric acid dips 5min, removes phosphorosilicate glass, rinsed with deionized water, oven dry;
(5) utilize PECVD (plasma enhanced chemical vapor deposition) to deposit a layer thickness in the front and be about the silicon nitride antireflective coating about 75nm;
(6) printing front silver grating line, printed back silver aluminium main grid line, oven dry, the printed back aluminium lamination, oven dry, guipure speed is 450cm/min during sintering, 800 ℃ of temperature are accomplished the both sides electrode.
Through measuring; Solar cell (1sun, AM1.5G, 25 ℃) efficient under standard test condition of polysilicon chip preparation behind the attenuate is 15.23%; And thickness be the efficient of solar cell of the polysilicon chip preparation of 200 μ m is 7.87%, and the absolute efficiency of battery has improved 7.36%.
Embodiment 2
(1) be that the N type metallurgical grade boron phosphorus compensation monocrystalline silicon piece (resistivity is 0.5 Ω .cm) of 180 μ m is put into nitric acid (mass fraction 68%), hydrofluoric acid (mass fraction 40%) and CH with thickness
3(volume ratio is 1: 1: 5) carried out the chemical corrosion attenuate in COOH three's the mixed liquor.Take out after putting into 10min, measure through the spiral micrometer, the thickness of silicon chip is about 100 μ m;
(2) silicon chip behind the attenuate being put into mass concentration is that 30% the NaOH aqueous solution carries out surface wool manufacturing, uses hydrofluoric acid (mass fraction 40%) pickling 5min then, with drying after the washed with de-ionized water;
(3) silicon chip after will drying is put into the phosphorous diffusion stove, and positive diffusion one deck square resistance is the phosphorus-diffused layer of 80-120 Ω, is used for the front-surface field of N type battery;
(4) utilize fluorine ion to etch away the edge diffusion layer of diffusion sheet in the plasma etcher; The use mass percent concentration is 2% hydrofluoric acid dips 5min, removes phosphorosilicate glass, rinsed with deionized water, oven dry;
(5) utilize PECVD (plasma enhanced chemical vapor deposition) to deposit a layer thickness in the front and be about the silicon nitride antireflective coating about 75nm;
(6) printing front silver grating line, printed back silver aluminium main grid line, oven dry, the printed back aluminium lamination, oven dry, guipure speed is 450cm/min during sintering, 800 ℃ of temperature are accomplished the both sides electrode.
Through measuring; Solar cell (1sun, AM1.5G, 25 ℃) efficient under standard test condition of monocrystalline silicon piece preparation behind the attenuate is 16.47%; And thickness be the efficient of solar cell of the monocrystalline silicon piece preparation of 180 μ m is 10.21%, and the absolute efficiency of battery has improved 6.26%.
Embodiment 3
(1) be that the N type polysilicon chip (resistivity is 0.5 Ω .cm) of 180 μ m is put into nitric acid (mass fraction 65%), hydrofluoric acid (mass fraction 40%) and H with thickness
2(volume ratio is 2: 1: 7) carried out the chemical corrosion attenuate in O three's the mixed liquor.Take out after putting into 7min, measure through the spiral micrometer, the thickness of silicon chip is about 120 μ m;
(2) mixed liquor (volume ratio is 1: 3) of the silicon chip behind the attenuate being put into nitric acid (mass fraction 65%) and hydrofluoric acid (mass fraction 40%) carries out surface wool manufacturing, uses hydrofluoric acid (mass fraction 40%) pickling 5min then, with drying after the washed with de-ionized water;
(3) silicon chip after will drying is put into the phosphorous diffusion stove, and positive diffusion one deck square resistance is the phosphorus-diffused layer of 80-120 Ω, is used for the front-surface field of N type battery;
(4) utilize fluorine ion to etch away the edge diffusion layer of diffusion sheet in the plasma etcher; The use mass percent concentration is 2% hydrofluoric acid dips 5min, removes phosphorosilicate glass, rinsed with deionized water, oven dry;
(5) utilize PECVD (plasma enhanced chemical vapor deposition) to deposit a layer thickness in the front and be about the silicon nitride antireflective coating about 75nm;
(6) printing front silver grating line, printed back silver aluminium main grid line, oven dry, the printed back aluminium lamination, oven dry, guipure speed is 450cm/min during sintering, 800 ℃ of temperature are accomplished the both sides electrode.
Through measuring; Solar cell (1sun, AM1.5G, 25 ℃) efficient under standard test condition of polysilicon chip preparation behind the attenuate is 14.17%; And thickness be the efficient of solar cell of the polysilicon chip preparation of 180 μ m is 5.98%, and the absolute efficiency of battery has improved 8.19%.
Embodiment 4
(1) be that the N type metallurgical grade boron phosphorus compensation monocrystalline silicon piece (resistivity is 5 Ω .cm) of 200 μ m is put into nitric acid (mass fraction 68%), hydrofluoric acid (mass fraction 40%) and CH with thickness
3(volume ratio is 1: 2: 5) carried out the chemical corrosion attenuate in COOH three's the mixed liquor.Take out after putting into 9min, measure through the spiral micrometer, the thickness of silicon chip is about 100 μ m;
(2) silicon chip behind the attenuate being put into mass concentration is that 30% the NaOH aqueous solution carries out surface wool manufacturing, uses hydrofluoric acid (mass fraction 40%) pickling 5min then, with drying after the washed with de-ionized water;
(3) silicon chip after will drying is put into the phosphorous diffusion stove, and positive diffusion one deck square resistance is the phosphorus-diffused layer of 80-120 Ω, is used for the front-surface field of N type battery;
(4) utilize fluorine ion to etch away the edge diffusion layer of diffusion sheet in the plasma etcher; The use mass percent concentration is 2% hydrofluoric acid dips 5min, removes phosphorosilicate glass, rinsed with deionized water, oven dry;
(5) utilize PECVD (plasma enhanced chemical vapor deposition) to deposit a layer thickness in the front and be about the silicon nitride antireflective coating about 75nm;
(6) printing front silver grating line, printed back silver aluminium main grid line, oven dry, the printed back aluminium lamination, oven dry, guipure speed is 450cm/min during sintering, 800 ℃ of temperature are accomplished the both sides electrode.
Through measuring; Solar cell (1sun, AM1.5G, 25 ℃) efficient under standard test condition of monocrystalline silicon piece preparation behind the attenuate is 17.01%; And thickness be the efficient of solar cell of the monocrystalline silicon piece preparation of 200 μ m is 12.22%, and the absolute efficiency of battery has improved 4.79%.
Claims (9)
1. the preparation method of a N type crystalline silicon emitter junction solar cell; Comprise that N type crystalline silicon sheet is immersed corrosive liquid carries out chemical reduction; And then process described N type crystalline silicon emitter junction solar cell, it is characterized in that described corrosive liquid comprises nitric acid and hydrofluoric acid.
2. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1 is characterized in that: described nitric acid mass fraction is 65%～68%.
3. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1 is characterized in that: described hydrofluoric acid mass fraction is 40%.
4. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1, it is characterized in that: described corrosive liquid also comprises CH
3COOH and/or water.
5. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1; It is characterized in that: described N type crystalline silicon sheet carries out carrying out surface wool manufacturing behind the chemical reduction, forms front-surface field in the front surface phosphorous diffusion successively after the cleaning, plasma etching trimming knot; Chemical cleaning dephosphorization silex glass; Front surface deposited silicon nitride antireflective coating, front surface screen-printed silver slurry, back of the body surface screen-printed aluminium paste and co-sintering are processed described N type crystalline silicon emitter junction solar cell.
6. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1 is characterized in that: described N type crystalline silicon sheet is a polysilicon chip, adopts HNO behind the chemical reduction
3Carry out acid surfaces making herbs into wool with the HF mixed liquor.
7. the preparation method of N type crystalline silicon emitter junction solar cell as claimed in claim 1 is characterized in that: described N type silicon chip is low-quality monocrystalline silicon piece, adopts the NaOH aqueous solution or the KOH aqueous solution to carry out the alkali surface wool manufacturing behind the chemical reduction.
8. like used corrosive liquid among the preparation method of each described N type crystalline silicon emitter junction solar cell of claim 1～7, it is characterized in that described corrosive liquid comprises nitric acid and hydrofluoric acid.
9. corrosive liquid as claimed in claim 8 is characterized in that, also comprises CH
3COOH and/or water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100738168A CN102593263A (en) | 2012-03-20 | 2012-03-20 | Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100738168A CN102593263A (en) | 2012-03-20 | 2012-03-20 | Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102593263A true CN102593263A (en) | 2012-07-18 |
Family
ID=46481668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100738168A Pending CN102593263A (en) | 2012-03-20 | 2012-03-20 | Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102593263A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800753A (en) * | 2012-08-16 | 2012-11-28 | 英利能源（中国）有限公司 | Method for preparing crystalline silicon solar cell |
| CN103035780A (en) * | 2012-12-26 | 2013-04-10 | 太阳能光伏北京市工程研究中心有限公司 | Polycrystalline silicon check line piece wool-surface-obtaining method |
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN104037262A (en) * | 2014-05-08 | 2014-09-10 | 中国电子科技集团公司第四十八研究所 | Manufacturing process of ultrathin crystal silicon flexible solar cell |
| CN103165759B (en) * | 2013-04-09 | 2015-08-19 | 海南英利新能源有限公司 | A kind of crystal silicon solar energy battery and preparation method thereof |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105081893A (en) * | 2015-05-13 | 2015-11-25 | 北京通美晶体技术有限公司 | Ultrathin Ge single crystal substrate material and preparation method thereof |
| CN107437574A (en) * | 2017-08-16 | 2017-12-05 | 宁波诗宏千禧贸易有限公司 | A kind of preparation method of N-type one side battery |
| CN109802009A (en) * | 2019-01-18 | 2019-05-24 | 河北大学 | A kind of preparation method of ultrathin crystal silicon double-sided solar battery |
| CN110190155A (en) * | 2019-06-28 | 2019-08-30 | 天合光能股份有限公司 | A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof |
| CN111916510A (en) * | 2019-05-07 | 2020-11-10 | 君泰创新（北京）科技有限公司 | Preparation method of ultrathin flexible silicon solar cell |
| CN114899244A (en) * | 2022-04-12 | 2022-08-12 | 中山德华芯片技术有限公司 | Preparation method of gallium arsenide solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150148A (en) * | 2007-11-02 | 2008-03-26 | 宁波杉杉尤利卡太阳能科技发展有限公司 | Novel aluminum emitter junction N type single crystal silicon solar battery |
-
2012
- 2012-03-20 CN CN2012100738168A patent/CN102593263A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150148A (en) * | 2007-11-02 | 2008-03-26 | 宁波杉杉尤利卡太阳能科技发展有限公司 | Novel aluminum emitter junction N type single crystal silicon solar battery |
Non-Patent Citations (2)
| Title |
|---|
| 梁宗存等: "薄硅片太阳电池制备技术", 《第十届中国太阳能光伏会议论文集》 * |
| 陈君等: "铸造多晶硅太阳电池表面织构化的研究", 《中国第六届光伏会议论文集》 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102800753A (en) * | 2012-08-16 | 2012-11-28 | 英利能源（中国）有限公司 | Method for preparing crystalline silicon solar cell |
| CN103035780A (en) * | 2012-12-26 | 2013-04-10 | 太阳能光伏北京市工程研究中心有限公司 | Polycrystalline silicon check line piece wool-surface-obtaining method |
| CN103165759B (en) * | 2013-04-09 | 2015-08-19 | 海南英利新能源有限公司 | A kind of crystal silicon solar energy battery and preparation method thereof |
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103643303A (en) * | 2013-12-05 | 2014-03-19 | 天津中环领先材料技术有限公司 | Processing method of monocrystalline silicon acid corrosion piece |
| CN104037262A (en) * | 2014-05-08 | 2014-09-10 | 中国电子科技集团公司第四十八研究所 | Manufacturing process of ultrathin crystal silicon flexible solar cell |
| CN105081893A (en) * | 2015-05-13 | 2015-11-25 | 北京通美晶体技术有限公司 | Ultrathin Ge single crystal substrate material and preparation method thereof |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105040108B (en) * | 2015-08-21 | 2017-11-17 | 浙江启鑫新能源科技股份有限公司 | The etching method of polysilicon solar cell |
| CN107437574A (en) * | 2017-08-16 | 2017-12-05 | 宁波诗宏千禧贸易有限公司 | A kind of preparation method of N-type one side battery |
| CN109802009A (en) * | 2019-01-18 | 2019-05-24 | 河北大学 | A kind of preparation method of ultrathin crystal silicon double-sided solar battery |
| CN111916510A (en) * | 2019-05-07 | 2020-11-10 | 君泰创新（北京）科技有限公司 | Preparation method of ultrathin flexible silicon solar cell |
| CN110190155A (en) * | 2019-06-28 | 2019-08-30 | 天合光能股份有限公司 | A kind of efficient passivation contact crystalline silicon solar cell comprising and preparation method thereof |
| CN114899244A (en) * | 2022-04-12 | 2022-08-12 | 中山德华芯片技术有限公司 | Preparation method of gallium arsenide solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102593263A (en) | Preparation method of N-type crystalline silicon back emitter junction solar battery and corrosive liquid | |
| Metz et al. | Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology | |
| TWI521724B (en) | Solar cells and solar modules | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN101447532A (en) | Method for preparing crystalline silicon solar cell with passivation on double surfaces | |
| JP6553731B2 (en) | N-type double-sided battery wet etching method | |
| CN102122674B (en) | Crystalline silicon solar cell and preparation method thereof | |
| CN101916795A (en) | Method for passivating back of crystal silicon solar cell | |
| CN102820378A (en) | Gettering method for prolonging effective service life of crystalline silicon substrate | |
| CN102969392B (en) | A kind of single-sided polishing technique of solar energy single crystal silion cell | |
| CN102800745A (en) | Method for producing rear passivation double-sided solar cell | |
| CN104934500A (en) | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter | |
| CN101872806A (en) | Method for texture etching of solar cell silicon wafer and method for manufacturing solar cell | |
| CN105826409B (en) | A kind of preparation method of local back field N-type solar cell | |
| CN109285897A (en) | A kind of efficient passivation contact crystalline silicon solar cell and preparation method thereof | |
| CN105655424A (en) | Full-back-field diffusion N-type silicon-based battery and preparation method thereof | |
| CN110137305A (en) | A kind of preparation method of p-type polysilicon selective emitter double-side cell | |
| CN101872808A (en) | Manufacturing method of selective emitter of crystalline silicon solar cell | |
| CN103117330B (en) | A kind of preparation method of solar cell | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| CN105957921B (en) | A kind of method that utilization printing technology prepares N-type silicon IBC solar cells | |
| CN103050573B (en) | A kind of preparation method carrying on the back passivation cell | |
| CN102337595B (en) | Small-texture monocrystal silicon solar cell texture-manufacturing promoter and application thereof | |
| CN104112795B (en) | A kind of production method of silicon heterogenous solar cell | |
| CN101728459A (en) | Preparation method of crystal silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120718 |