CN102800753A - Method for preparing crystalline silicon solar cell - Google Patents
Method for preparing crystalline silicon solar cell Download PDFInfo
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- CN102800753A CN102800753A CN2012102923483A CN201210292348A CN102800753A CN 102800753 A CN102800753 A CN 102800753A CN 2012102923483 A CN2012102923483 A CN 2012102923483A CN 201210292348 A CN201210292348 A CN 201210292348A CN 102800753 A CN102800753 A CN 102800753A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a method for preparing a crystalline silicon solar cell. The method comprises the steps of wool making, diffusion, wet etching, antireflection film deposition, silk screen printing and sintering and further comprises the step of silicon wafer polishing before the wool making step. By applying the technical scheme of the invention, the thickness of an affected layer is thinned by adding the polishing procedure, the existence of the affected layer is thoroughly eliminated by subsequent wool making and wet etching, the compounding of charge carriers due to the affected layer is avoided, the service life of the charge carriers is prolonged, and the conversion efficiency of the crystalline silicon solar cell is improved.
Description
Technical field
The present invention relates to the solar cell preparing technical field, in particular to a kind of preparation method of crystal silicon solar energy battery.
Background technology
In the prior art, the main flow process of the production of crystal silicon battery is generally: the deposition of making herbs into wool, diffusion, wet etching, antireflective coating, silk screen printing and sintering, and as shown in Figure 1.In conventional crystalline silicon production procedure, silicon chip directly carries out acid corrosion making herbs into wool with formation matte effect, thereby plays antireflecting effect.Diffuse to form the PN junction of certain diffusion depth then, then carry out wet etching treatment removal silicon chip diffusion layer all around and avoid PN junction conducting formation to leak electricity with the insulating barrier on surface.Subsequently; Utilize PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) process deposits silicon nitride antireflection layer, reduce the reflection loss of sunlight; Play the effect of passivation simultaneously, improve the minority carrier life time of charge carrier.Utilize silk screen that metal paste is printed on silicon chip surface at last,, accomplish the preparation of solar cell piece through the both positive and negative polarity of sintering process formation solar cell.
At present, silicon chip normally forms through section, and thickness is usually about 180 μ m.Usually the affected layer that has 10 μ m left and right thicknesses at these silicon chip surfaces.In the making herbs into wool step, the thickness that this affected layer is removed is generally at 3～6 μ m, and the thickness that follow-up wet etching removes silicon chip is 1～2 μ m, so still have certain thickness affected layer at silicon chip surface.And the existence of affected layer improves the compound probability of charge carrier greatly, thereby has reduced the life-span of charge carrier, has reduced the conversion efficiency of solar cell.
Summary of the invention
The present invention aims to provide a kind of preparation method of crystal silicon solar energy battery, to solve the technical problem of the conversion efficiency reduction that causes solar cell owing to existing of affected layer on the silicon chip in the prior art.
To achieve these goals, according to an aspect of the present invention, a kind of preparation method of crystal silicon solar energy battery is provided.This method comprises deposition, silk screen printing and the sintering of making herbs into wool, diffusion, wet etching, antireflective coating, before the making herbs into wool step, further comprises the step that silicon chip is polished.
Further, polishing step specifically comprises: the affected layer of removing silicon chip surface 2～3.5 μ m.
Further, polishing step is chemical polishing.
Further, chemical polishing specifically may further comprise the steps: the affected layer of silicon chip being put into chemical liquid erosion removal 2～3.5 μ m.
Further, chemical liquid is to contain HF and HNO
3The aqueous solution.
Further, the quality percentage composition of HF is 2%～4% in the chemical liquid, HNO
3The quality percentage composition be 50%～60%.
Further, in the chemical polishing silicon chip being put into the time that chemical liquid soaks is 2～4min, 8～10 ℃ of temperature.
Use technical scheme of the present invention; Through increasing polishing process; Attenuate the thickness of affected layer, follow-uply thoroughly eliminate the existence of affected layer through making herbs into wool and wet etching again, thereby avoided charge carrier compound because of affected layer; And then the life-span of having improved charge carrier, the conversion efficiency of crystal-silicon solar cell is promoted.
Description of drawings
Figure of description is used to provide further understanding of the present invention, constitutes a part of the present invention, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, does not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 shows crystal silicon solar energy battery preparation method's in the prior art process chart; And
Fig. 2 shows the process chart according to the crystal silicon solar energy battery preparation method of the embodiment of the invention.
Embodiment
Need to prove that under the situation of not conflicting, embodiment and the characteristic among the embodiment among the present invention can make up each other.Below with reference to accompanying drawing and combine embodiment to specify the present invention.
One typical embodiment according to the present invention; As shown in Figure 2; The preparation method of crystal silicon solar energy battery comprises deposition, silk screen printing and the sintering of making herbs into wool, diffusion, wet etching, antireflective coating, before the making herbs into wool step, further comprises the step that silicon chip is polished.Use technical scheme of the present invention; Through increasing polishing process; Attenuate the thickness of affected layer, follow-uply thoroughly eliminate the existence of affected layer through making herbs into wool and wet etching again, thereby avoided charge carrier compound because of affected layer; And then the life-span of having improved charge carrier, the conversion efficiency of crystal-silicon solar cell is promoted.
Preferably, polishing step comprises the affected layer of removing silicon chip surface 2～3.5 μ m.Because silicon chip normally forms through section at present, thickness is usually about 180 μ m.Usually the affected layer that has 10 μ m left and right thicknesses at these silicon chip surfaces.In the making herbs into wool step; The thickness that this affected layer is removed is generally at 3～6 μ m; The thickness that follow-up wet etching removes silicon chip is 1～2 μ m, so remove the affected layer of silicon chip surface 2～3.5 μ m in the polishing step, the affected layer of silicon chip surface is just removed fully; The conversion efficiency of crystal-silicon solar cell is promoted, also be unlikely to waste silicon sheet material.
A kind of typical embodiment according to the present invention, polishing step are chemical polishing.The place to go thickness of silicon chip surface affected layer is controlled in chemical polishing more easily.Preferably, chemical polishing specifically may further comprise the steps: silicon chip is put into the affected layer of chemical liquid erosion removal 2～3.5 μ m, and the method that adopts chemical liquid to soak is easy to operate, is suitable for suitability for industrialized production.
A kind of typical embodiment according to the present invention, chemical liquid are to contain HF and HNO
3The aqueous solution because adopt HF and HNO
3The aqueous solution silicon chip is polished, the affected layer that had simultaneously attenuate can not cause the advantage of new damage again.Preferably, the quality percentage composition of HF is 2%～4% in the chemical liquid, HNO
3The quality percentage composition be 50%～60%.
A kind of typical embodiment according to the present invention, polishing step also can be for physics polish, as utilize the method for diamond polishing liquid mechanical lapping that silicon chip is carried out attenuate and polishing.
Embodiment
According to technical scheme of the present invention, adopt earlier to contain HF and HNO
3The aqueous solution (the quality percentage composition of HF is 2%～4%, HNO
3The quality percentage composition be 50%～60%) soak silicon chip, the affected layer of place to go 2～3.5 μ m adopts step conventional in the prior art to carry out the preparation of solar cell then.
Because it is very big that battery conversion efficiency is influenced by film source, therefore, can only between the silicon chip of same film source, make comparisons.Embodiment 1～3rd, adopts the silicon chip with a collection of film source; Under the condition of other parameter constant, through changing belt speed at 1.7-2.2m/min, the different etching extents of control silicon chip; Make solar cell then, carry out the contrast of the solar cell conversion efficiency of following three different etching extents.
Table one: polish away the variation of the battery electrical parameter of the solar cell that the silicon chip behind the affected layer of different-thickness processes
Can find out that from the data of table one it is best to remove damage layer thickness effect when 2.5 μ m usually, battery conversion efficiency reaches 16.81, and etching extent big slightly (3.5 μ m) or etching extent slightly little (2.5 μ m) battery conversion efficiency all decrease.
According to technical scheme of the present invention, adopt earlier to contain HF and HNO
3The aqueous solution (the quality percentage composition of HF is 2%～4%, HNO
3The quality percentage composition be 50%～60%) soak silicon chip, the affected layer of place to go 2.5 μ m adopts step conventional in the prior art to carry out the preparation of solar cell then.Comparative Examples has only been lacked polishing step than above-mentioned instance, and other manufacturing procedure is same as the previously described embodiments.It in the table two experiment of adopting the silicon chip of same film source to carry out.
Table two: the electrical parameter contrast of the solar cell that the silicon chip of processing behind production process in the prior art (Comparative Examples) and the increase polishing process is processed
Testing result shows; Use technical scheme of the present invention, through increasing polishing process, attenuate the thickness of affected layer; The follow-up existence of thoroughly eliminating affected layer again through making herbs into wool and wet etching; Thereby avoided charge carrier compound because of affected layer, and then the life-span of having improved charge carrier, make the conversion efficiency of crystal silicon solar energy battery provide 0.11%.In actual production, the solar cell that adopts technical scheme of the present invention and prior art not to have polishing process to make is compared, and battery conversion efficiency has on average promoted 0.5%～0.1%.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the preparation method of a crystal silicon solar energy battery comprises it is characterized in that deposition, silk screen printing and the sintering of making herbs into wool, diffusion, wet etching, antireflective coating, before said making herbs into wool step, further comprises the step that silicon chip is polished.
2. preparation method according to claim 1 is characterized in that, said polishing step specifically comprises: the affected layer of removing silicon chip surface 2～3.5 μ m.
3. preparation method according to claim 1 is characterized in that, said polishing step is chemical polishing.
4. preparation method according to claim 3 is characterized in that, said chemical polishing specifically may further comprise the steps: the affected layer of said silicon chip being put into chemical liquid erosion removal 2～3.5 μ m.
5. preparation method according to claim 4 is characterized in that, said chemical liquid is to contain HF and HNO
3The aqueous solution.
6. preparation method according to claim 5 is characterized in that, the quality percentage composition of HF is 2%～4% in the said chemical liquid, HN0
3The quality percentage composition be 50%～60%.
7. preparation method according to claim 6 is characterized in that, in the said chemical polishing said silicon chip being put into the time that chemical liquid soaks is 2～4min, 8～10 ℃ of temperature.
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| CN2012102923483A CN102800753A (en) | 2012-08-16 | 2012-08-16 | Method for preparing crystalline silicon solar cell |
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| CN2012102923483A CN102800753A (en) | 2012-08-16 | 2012-08-16 | Method for preparing crystalline silicon solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103268908A (en) * | 2013-05-31 | 2013-08-28 | 英利集团有限公司 | MWT solar cell piece manufacturing method |
| CN103746004A (en) * | 2014-01-13 | 2014-04-23 | 英利集团有限公司 | Preparing method of solar cell piece |
| CN111106185A (en) * | 2019-12-30 | 2020-05-05 | 江苏祺创光电集团有限公司 | Environment-friendly solar photovoltaic module |
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2012
- 2012-08-16 CN CN2012102923483A patent/CN102800753A/en active Pending
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258918A (en) * | 2013-05-31 | 2013-08-21 | 英利集团有限公司 | Silicon wafer texturing method, solar battery piece and manufacturing method of solar battery piece |
| CN103268908A (en) * | 2013-05-31 | 2013-08-28 | 英利集团有限公司 | MWT solar cell piece manufacturing method |
| CN103746004A (en) * | 2014-01-13 | 2014-04-23 | 英利集团有限公司 | Preparing method of solar cell piece |
| CN103746004B (en) * | 2014-01-13 | 2016-08-24 | 英利集团有限公司 | The preparation method of solar battery sheet |
| CN111106185A (en) * | 2019-12-30 | 2020-05-05 | 江苏祺创光电集团有限公司 | Environment-friendly solar photovoltaic module |
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Application publication date: 20121128 |