CN103746004A - Preparing method of solar cell piece - Google Patents
Preparing method of solar cell piece Download PDFInfo
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- CN103746004A CN103746004A CN201410014836.7A CN201410014836A CN103746004A CN 103746004 A CN103746004 A CN 103746004A CN 201410014836 A CN201410014836 A CN 201410014836A CN 103746004 A CN103746004 A CN 103746004A
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- 238000000034 method Methods 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 238000005245 sintering Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 71
- 238000002161 passivation Methods 0.000 claims description 60
- 239000006117 anti-reflective coating Substances 0.000 claims description 43
- 238000002360 preparation method Methods 0.000 claims description 27
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 239000002510 pyrogen Substances 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000004062 sedimentation Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000007747 plating Methods 0.000 abstract 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000004513 sizing Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 33
- 230000008021 deposition Effects 0.000 description 32
- 238000013461 design Methods 0.000 description 14
- 238000012360 testing method Methods 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000004087 circulation Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.
Description
Technical field
The present invention relates to area of solar cell, in particular to a kind of preparation method of solar battery sheet.
Background technology
Solar cell is arrived every field by large-scale application, and the stability that it is good and ripe technological process are the bases of its large-scale application.Crystal silicon solar batteries is when producing, first need to clean making the silicon chip of crystal silicon solar batteries, by chemical cleaning, reach the structuring of silicon chip surface is processed, then the silicon chip after cleaning is carried out to diffusion technology, silicon chip forms P-N knot through boron diffusion technology, to forming the silicon chip of P-N knot, carry out periphery etching process afterwards, to remove the formed conductive layer of silicon chip edge in diffusion technology.Then pass through chemical cleaning technology, to remove the glassy layer forming at silicon chip surface in diffusion process.Then through PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) technique, depositing antireflection film silicon nitride layer, the making such as the technique that prints electrode and sintering process obtain satisfactory crystal silicon solar batteries sheet.
The performance quality of crystal silicon is mainly embodied by its photoelectric conversion efficiency, and the quality of fill factor, curve factor (FF) has directly determined the height of the photoelectric conversion efficiency of crystal silicon.In solar battery sheet production process, conventionally can run into the lower cell piece of photoelectric conversion efficiency that the reduction because of FF causes.In order to promote, be the FF of solar battery sheet, researcher once attempted several different methods, for example, change the metal paste that printing grid line is used.Yet although the method for this replacing metal paste can improve the FF of solar battery sheet to a certain extent, its raising degree is limited.
Therefore, the method that promotes the fill factor, curve factor of emitter solar battery sheet need to improve, fundamentally to promote the fill factor, curve factor of solar battery sheet, thus the photoelectric conversion efficiency of raising solar cell.
Summary of the invention
The present invention aims to provide a kind of preparation method of solar battery sheet, to promote the fill factor, curve factor of solar battery sheet.
To achieve these goals, according to an aspect of the present invention, a kind of preparation method of solar battery sheet is provided, this preparation method comprises the step of passivation emitter and coated with antireflection film, the step of coated with antireflection film comprises: before the step of passivation emitter, the plated film for the first time at the back side of silicon chip, forms back side antireflective coating; And after the step of passivation emitter, the plated film for the second time in the front of silicon chip, forms front antireflective coating.
Further, in passivation emitter step, form aluminium oxide passivation layer.
Further, the thickness of aluminium oxide passivation layer is 0.5nm～30nm.
Further, the method for formation aluminium oxide passivation layer is atomic layer deposition method, sputtering method, plasma enhanced chemical gas phase band electrodeposition process or sol-gal process.
Further, back side antireflective coating is identical with the material of front antireflective coating, and formation method is identical.
Further, back side antireflective coating and front antireflective coating are silicon nitride anti-reflecting film.
Further, the thickness of back side antireflective coating is 30nm～100nm; The thickness of front antireflective coating is 70nm～90nm.
Further, back side antireflective coating and front antireflective coating adopt PECVD sedimentation to form.
Further, before the step of passivation emitter, also comprise: the diffusion system knot carrying out in order and the step of plasma etching; After plated film step for the second time, also comprise the step of printing-sintering.
Further, the step that comprises respectively chemical cleaning after the step before the step of diffusion system knot and at passivation emitter.
Apply the preparation method of technical scheme solar battery sheet of the present invention, by first at silicon chip back side coated with antireflection film before passivation emitter, after passivation emitter again in the method for front side of silicon wafer coated with antireflection film, the back side that can passivation material is stained with silicon chip in the step of passivation emitter effectively, and then can effectively prevent that metal paste from can not penetrate the juxtaposition metamorphose phenomenon that this passivation material causes when sintering, improved the ohm contact performance of metal paste and silicon chip matrix, promoted the fill factor, curve factor of solar battery sheet, thereby improved the photoelectric conversion efficiency of solar battery sheet.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can combine mutually.Below in conjunction with embodiment, describe the present invention in detail.
As background technology, mention, in solar battery sheet production process, conventionally can run into the lower cell piece of photoelectric conversion efficiency that the reduction because of FF causes.Inventor has carried out a large amount of research, finds under study for action in solar battery sheet production process, conventionally in the positive deposit passivation layer of silicon chip, such as adopting aluminium oxide to carry out the emitter of passivation N-type solar battery sheet as dielectric layer.Yet, in the step of front side of silicon wafer deposit passivation layer, when being carried out to passivation, the emitter of silicon chip inevitably can be stained with passivating material at the back side of silicon chip, and when this passivating material contacts the sintering effect can affect follow-up metal paste at sintering time with Si, will reduce the lifting factor of solar battery sheet, thereby reduce the photoelectric conversion efficiency of solar battery sheet.
In order to address this problem, in a kind of typical execution mode of the present invention, a kind of preparation method of solar battery sheet is provided, this preparation method comprises the step of passivation emitter and coated with antireflection film, the step of coated with antireflection film comprises: before the step of passivation emitter, the plated film for the first time at the back side of silicon chip, forms back side antireflective coating; And after the step of passivation emitter, the plated film for the second time in the front of silicon chip, forms front antireflective coating.
The preparation method of above-mentioned solar battery sheet provided by the present invention, by first at silicon chip back side coated with antireflection film before passivation emitter, after passivation emitter again in the method for front side of silicon wafer coated with antireflection film, can effectively prevent the back side that passivation material is stained with silicon chip in the step of passivation emitter, and then can effectively prevent that metal paste from can not penetrate the juxtaposition metamorphose phenomenon that this impurity causes when sintering, improved the ohm contact performance of metal paste and silicon chip matrix, thereby promoted the fill factor, curve factor of solar battery sheet, improved photoelectric conversion efficiency.
In the above-mentioned preparation method of the present invention, the step of passivation emitter is to form passivation layer in the front of silicon chip, take N-type solar cell as example, and its emitter just refers to the P type silicon face that silicon chip diffuses to form through boron.The object that forms passivation layer at front side of silicon wafer is in order to reduce photo-generated carrier at the recombination rate of silicon chip surface, improves the utilance to luminous energy.
In the above-mentioned preparation method of the present invention, passivation material be there is no to special selectivity, as long as can play passivation emitter, reduce photo-generated carrier in the function of the recombination rate of silicon chip surface.Take N-type solar cell as example, adopt nitrogenize silicon/oxidative silicon duplicature or aluminium oxide as passivation layer, can provide good chemical passivation performance for silicon chip surface.Be preferably formed in the present invention aluminium oxide passivation layer.Aluminium oxide is during as passivation layer, can form one deck fixed negative charge in the interface of boron emitter surface, the electric field producing at silicon chip surface can reflect back being diffused into the minority carrier (electronics) coming on surface, greatly reduced near the quantity of the minority carrier of silicon chip surface, thereby reduced the speed of photo-generated carrier in surface recombination, can provide good field effect passivation for silicon chip surface.In a kind of preferred embodiment of the present invention, the thickness of aluminium oxide passivation layer is 0.5nm～30nm, aluminium oxide passivation layer is controlled in the thickness range of 0.5nm～30nm better to the passivation effect of the emitter of solar battery sheet, and is difficult for the emitter surface of boron diffusion to cause adverse effect.
In the above-mentioned preparation method of the present invention, the method that forms aluminium oxide passivation layer has multiple, the present invention preferably adopts atomic layer deposition method, sputtering method, plasma enhanced chemical gas phase band electrodeposition process or sol-gal process, and said method all can form aluminium oxide passivation layer.In said method, more preferably adopt atomic layer deposition method, this method can accurately be controlled the growth quality of alumina layer, thereby is more conducive to obtain the ultrathin alumina passivation layer with high homogeneity.
In the above-mentioned preparation method of the present invention, also be included in the step of the front and back difference coated with antireflection film of silicon chip, whether identical and whether formation method is identical there is no specific (special) requirements to the material of back side antireflective coating and front antireflective coating, as long as can form the antireflective coating of antireflective coating and formation, can realize the effect that reduces light reflection.In the present invention, preferably back side antireflective coating is identical with the material of front antireflective coating, and formation method is identical.Adopt identical antireflective coating material and identical formation method to be conducive to, guaranteeing, on the basis of anti-reflective effect, to maintain the stability of technique, enhance productivity.
Front and back at above-mentioned silicon chip is distinguished in the step of coated with antireflection film, and the material of antireflective coating can be silicon nitride or silica; The present invention's preferred back side antireflective coating and front antireflective coating are silicon nitride anti-reflecting film, and silicon nitride both can play antireflective, improve the efficiency of light energy utilization as antireflective coating, can also play certain passivation.More preferably the thickness of front antireflective coating is 70nm～90nm, and the thickness of back side antireflective coating is 30nm～100nm.By the THICKNESS CONTROL of antireflective coating in above-mentioned scope, can make the good absorbing properties of hue preserving of cell piece, and antireflective coating outside above-mentioned thickness range easily makes the color of the cell piece that forms change, thereby weaken antireflective ability, affect absorbing properties.
Step at above-mentioned silicon chip back side and front coated with antireflection film can adopt several different methods, as long as can all can be used for the present invention in the method for silicon chip back side and front coated with antireflection film, except the deposition process of chain type, also can adopt sedimentation or the evaporation coating technique of tubular type.In the present invention, preferably adopt PECVD method to form front antireflective coating and back side antireflective coating.PECVD method have pin hole less, deposit temperature required low, deposition rate is fast, quality of forming film good, is difficult for the advantage of be full of cracks.
In above-mentioned preparation method of the present invention, before the step of passivation emitter, also comprise: the step that spreads in sequence system knot and plasma etching by the preparation flow of N-type solar battery sheet, and after plated film step for the second time, also comprise the step of printing-sintering.Diffusion system knot step is in order to form P-N knot, and the step of plasma etching is to adopt plasma etching after completing diffusion system knot step, and it is in order to remove the conductive layer that in diffusion technology, silicon chip edge forms.After the step of plated film for the second time, in the step of printing-sintering, preferably the temperature of sintering is 630 ℃～870 ℃, and at this temperature, sintering can make metal paste and silicon substrate form good ohmic contact.
In above-mentioned preparation method of the present invention, after the step before the step of diffusion system knot and at passivation emitter, comprise respectively the step of chemical cleaning.Before diffusion, by chemical cleaning, realize the structuring of silicon chip surface is processed, form the exasperate structure of inverted pyramid type.After the step of passivation emitter, carrying out chemical cleaning is the glassy layer forming at silicon chip surface in diffusion process in order to remove.
Below in conjunction with specific embodiment 1 to 4 and comparative example 1, beneficial effect of the present invention is described.
Embodiment 1
According to the technological process of production of monocrystalline silicon N-type solar battery sheet, carry out successively after chemical cleaning, chemistry knot processed, plasma etching, chemical cleaning, obtain having the silicon chip of P-N knot, first adopting PECVD method is 70nm silicon nitride anti-reflecting film in backside deposition a layer thickness of silicon chip, the design parameter of PECVD equipment is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 200cm/min; Adopt the aluminium oxide passivation layer that pyrogen sublayer sedimentation is 5nm in the front of silicon chip deposition a layer thickness, the design parameter of pyrogen sublayer deposition is temperature 200 degree again, and ALD deposition cycle is 39 circulations; Then using PECVD method is 80nm silicon nitride anti-reflecting film in the front of silicon chip deposition a layer thickness, and the design parameter of the PECVD equipment of positive deposition is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 175cm/min; Finally carry out printing-sintering and make N-type solar battery sheet.
The fill factor, curve factor that adopts German Halm battery testing separator to test obtained N-type solar battery sheet is 78.8% left and right, and photoelectric conversion efficiency is 19.6%.
Embodiment 2
According to the technological process of production of monocrystalline silicon N-type solar battery sheet, carry out successively after chemical cleaning, chemistry knot processed, plasma etching, chemical cleaning, obtain having the silicon chip of P-N knot, first adopting PECVD method is 30nm silicon nitride anti-reflecting film in backside deposition a layer thickness of silicon chip, the design parameter of PECVD equipment is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 450cm/min; Adopt the aluminium oxide passivation layer that pyrogen sublayer sedimentation is 0.5nm in the front of silicon chip deposition a layer thickness, the design parameter of pyrogen sublayer deposition is temperature 200 degree again, and ALD deposition cycle is 7 circulations; Finally using PECVD method is 90nm silicon nitride anti-reflecting film in the front of silicon chip deposition a layer thickness, and the design parameter of the PECVD equipment of positive deposition is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 160cm/min.Finally carry out printing-sintering and make N-type solar battery sheet.
The fill factor, curve factor that adopts German Halm battery testing separator to test obtained N-type solar battery sheet is 78.9%, and photoelectric conversion efficiency is 19.62%.
Embodiment 3
According to the technological process of production of monocrystalline silicon N-type solar battery sheet, carry out successively after chemical cleaning, chemistry knot processed, plasma etching, chemical cleaning, obtain having the silicon chip of P-N knot, first adopting PECVD method is 100nm silicon nitride anti-reflecting film in backside deposition a layer thickness of silicon chip, the design parameter of PECVD equipment is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 160cm/min; Adopt the aluminium oxide passivation layer that pyrogen sublayer sedimentation is 30nm in the front of silicon chip deposition a layer thickness, the design parameter of pyrogen sublayer deposition is temperature 200 degree again, and ALD deposition cycle is 390 circulations; Finally using PECVD method is 70nm silicon nitride anti-reflecting film in the front of silicon chip deposition a layer thickness, and the design parameter of the PECVD equipment of positive deposition is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 200cm/min.Finally carry out printing-sintering and make N-type solar battery sheet.
The fill factor, curve factor that adopts German Halm battery testing separator to test obtained N-type solar battery sheet is 78.95%, and photoelectric conversion efficiency is 19.65%.
Embodiment 4
According to the technological process of production of monocrystalline silicon N-type solar battery sheet, carry out successively after chemical cleaning, chemistry knot processed, plasma etching, chemical cleaning, obtain having the silicon chip of P-N knot, first adopting PECVD method is 25nm silicon nitride anti-reflecting film in backside deposition a layer thickness of silicon chip, the design parameter of PECVD equipment is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 500cm/min; Adopt the aluminium oxide passivation layer that pyrogen sublayer sedimentation is 35nm in the front of silicon chip deposition a layer thickness, the design parameter of pyrogen sublayer deposition is temperature 200 degree again, and ALD deposition cycle is 455 circulations; Finally using PECVD method is 100nm silicon nitride anti-reflecting film in the front of silicon chip deposition a layer thickness, and the design parameter of the PECVD equipment of positive deposition is temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 140cm/min.Finally carry out printing-sintering and make N-type solar battery sheet.
The fill factor, curve factor that adopts German Halm battery testing separator to test obtained N-type solar battery sheet is 75.2%, and photoelectric conversion efficiency is 17.4%.
Comparative example 1
According to the technological process of production of monocrystalline silicon N-type solar battery sheet, carry out successively chemical cleaning, chemistry system knot, plasma etching, after chemical cleaning, obtain having the silicon chip of P-N knot, first adopt the aluminium oxide passivation layer that pyrogen sublayer sedimentation is 5nm in the front of silicon chip deposition a layer thickness, the design parameter of pyrogen sublayer sedimentation deposition of aluminium oxide is set to temperature 200 degree, ALD deposition cycle is 65 circulations, then adopt PECVD method at the front and back deposited silicon nitride antireflective coating of silicon chip, the thickness of positive silicon nitride anti-reflecting film is 80nm, the thickness of the silicon nitride anti-reflecting film at the back side is 40nm, the design parameter of PECVD deposition is set to temperature 400 degree, pressure 0.28mbar, NH
3: SiH
4=2400:1050sccm, speed 175cm/min during positive deposition, during backside deposition, speed is 200cm/min., finally carry out printing-sintering and make N-type solar battery sheet.
The fill factor, curve factor that adopts German Halm battery testing separator to test obtained N-type solar battery sheet is 77.8%, and photoelectric conversion efficiency is 19.55%.
As can be seen from the above description, embodiment 1～4 provided by the present invention adopts the method for substep deposited silicon nitride antireflective coating provided by the present invention, and while effectively having avoided deposition of aluminium oxide passivation layer, aluminium oxide contacts with the direct of silicon materials at the back side.When at aluminium oxide passivation layer and just, the thickness of back side antireflective coating is all in corresponding (preferred for this invention) scope (embodiment 1-3 and comparative example 1), adopt the method for substep deposited silicon nitride antireflective coating provided by the present invention, compare the preparation method of N-type solar battery sheet in ratio 1, obviously improved the performance of the alloy-layer that metal paste forms when sintering, promote the fill factor, curve factor of N-type solar cell, and then improved the photoelectric conversion efficiency of N-type solar cell.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a preparation method for solar battery sheet, comprises and it is characterized in that the step of passivation emitter and coated with antireflection film, and the step of described coated with antireflection film comprises:
Before the step of described passivation emitter, the plated film for the first time at the back side of silicon chip, forms back side antireflective coating; And
After the step of described passivation emitter, the plated film for the second time in the front of described silicon chip, forms front antireflective coating.
2. preparation method according to claim 1, is characterized in that, in described passivation emitter step, forms aluminium oxide passivation layer.
3. preparation method according to claim 2, is characterized in that, the thickness of described aluminium oxide passivation layer is 0.5nm～30nm.
4. preparation method according to claim 2, is characterized in that, the method for described formation aluminium oxide passivation layer is pyrogen sublayer sedimentation, sputtering method, plasma enhanced chemical gas phase band electrodeposition process or sol-gal process.
5. preparation method according to claim 1, is characterized in that, described back side antireflective coating is identical with the material of described front antireflective coating, and formation method is identical.
6. preparation method according to claim 5, is characterized in that, described back side antireflective coating and described front antireflective coating are silicon nitride anti-reflecting film.
7. preparation method according to claim 6, is characterized in that, the thickness of described back side antireflective coating is 30nm～100nm; The thickness of described front antireflective coating is 70nm～90nm.
8. according to the preparation method described in claim 6 or 7, it is characterized in that, described back side antireflective coating and described front antireflective coating adopt PECVD method to form.
9. preparation method according to claim 1, is characterized in that, before the step of described passivation emitter, also comprises: diffusion system knot and the plasma etching step of carrying out in order; After the described step of plated film for the second time, also comprise the step of printing-sintering.
10. preparation method according to claim 9, is characterized in that, comprises respectively the step of chemical cleaning after the step before described diffusion system knot step and at described passivation emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410014836.7A CN103746004B (en) | 2014-01-13 | 2014-01-13 | The preparation method of solar battery sheet |
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| CN201410014836.7A CN103746004B (en) | 2014-01-13 | 2014-01-13 | The preparation method of solar battery sheet |
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| CN103746004A true CN103746004A (en) | 2014-04-23 |
| CN103746004B CN103746004B (en) | 2016-08-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502874A (en) * | 2017-09-19 | 2017-12-22 | 常州亿晶光电科技有限公司 | Improve the back of the body depositing process of PERC high-efficiency battery piece warpages |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102800753A (en) * | 2012-08-16 | 2012-11-28 | 英利能源（中国）有限公司 | Method for preparing crystalline silicon solar cell |
| CN103325885A (en) * | 2013-05-29 | 2013-09-25 | 英利集团有限公司 | P-shaped back passivation solar cell and manufacturing method thereof |
-
2014
- 2014-01-13 CN CN201410014836.7A patent/CN103746004B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777603A (en) * | 2009-01-08 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing back contact solar energy batteries |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102800753A (en) * | 2012-08-16 | 2012-11-28 | 英利能源（中国）有限公司 | Method for preparing crystalline silicon solar cell |
| CN103325885A (en) * | 2013-05-29 | 2013-09-25 | 英利集团有限公司 | P-shaped back passivation solar cell and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107502874A (en) * | 2017-09-19 | 2017-12-22 | 常州亿晶光电科技有限公司 | Improve the back of the body depositing process of PERC high-efficiency battery piece warpages |
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