CN107502874A - Improve the back of the body depositing process of PERC high-efficiency battery piece warpages - Google Patents
Improve the back of the body depositing process of PERC high-efficiency battery piece warpages Download PDFInfo
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- CN107502874A CN107502874A CN201710846590.3A CN201710846590A CN107502874A CN 107502874 A CN107502874 A CN 107502874A CN 201710846590 A CN201710846590 A CN 201710846590A CN 107502874 A CN107502874 A CN 107502874A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000151 deposition Methods 0.000 title claims abstract description 24
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 13
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 13
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 238000000576 coating method Methods 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 abstract description 30
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000004075 alteration Effects 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention relates to solar battery sheet technical field, especially a kind of back of the body depositing process of improvement PERC high-efficiency battery piece warpages, plated film is carried out to the back side of silicon chip using PEVCD, use multisection type plated film, temperature in every section of coating process is cooled to 380 420 DEG C from 480 520 DEG C, circulation technology scheme of the back of the body depositing process of the improvement PERC high-efficiency battery piece warpages of the present invention because employing segmented lapse of temperature, silicon chip is constantly in the easy warpage of the condition of high temperature when avoiding back of the body plating simultaneously and reaction temperature continues too low the problem of being had an impact to coating quality, realize that the silicon chip after back of the body plating is not easy warpage, and overall uniform film thickness, improve the lifting of production efficiency and follow-up positive plating production capacity.
Description
Technical field
The present invention relates to solar battery sheet technical field, the back of the body plating of especially a kind of improvement PERC high-efficiency battery piece warpages
Technique.
Background technology
Current technical field of solar batteries, the application of high-efficiency battery technology is constantly progressive, such as the high-efficiency battery such as PERC,
The conversion efficiency of its battery is constantly being lifted, first after plating aluminum oxide on silicon chip in existing cell piece preparation technology
Back side silicon nitride silicon plated film is first carried out, then carries out front plated film again, is produced by this technological process, because the thickness glue of back of the body plating is thick,
Plated film time is longer, and silicon chip is under the condition of high temperature for a long time, and warpage easily occurs for the silicon chip after back of the body plating, after silicon chip bends
When doing positive plating, easily fall piece, and the indivedual stuck points of graphite boat can not block slice, thin piece, cause silicon chip complete with graphite boat
Fitting, causing more positive plated film aberration piece, it is well known that the warpage of silicon chip can be reduced by directly reducing reaction temperature, but because anti-
Answer constant temperature is relatively low can be had an impact to film thickness uniformity and coating quality, cell piece power can be influenceed indirectly, so can not
Warpage during silicon chip back of the body plating is directly improved by lower temperature regulating.
The content of the invention
The technical problem to be solved in the present invention is：In order to which asking for warpage easily occurs when solving silicon chip back of the body plating in the prior art
Topic, now provides a kind of back of the body depositing process of improvement PERC high-efficiency battery piece warpages, the technique is reacted by circulation temperature lowering, accomplished
The slice, thin piece flexibility after back of the body plating is reduced, while does not influence silicon chip entirety coating quality.
The technical solution adopted for the present invention to solve the technical problems is：A kind of back of the body of improvement PERC high-efficiency battery piece warpages
Depositing process, plated film is carried out to the back side of silicon chip using PEVCD, using multisection type plated film, temperature in every section of coating process from
480-520 DEG C is cooled to 380-420 DEG C.
Specifically, the specific steps of the back of the body depositing process include：
A, stove is entered：The graphite boat for having inserted silicon chip is sent into furnace chamber, closes fire door；
B, heat up：Open heating and the temperature in furnace chamber is promoted to 480-520 DEG C；
C, single hop plated film：Furnace chamber stops heating, and is passed through SiN4 and NH3, and SiN4 flow is 650-700sccm, NH3's
Flow is that 7000-7500sccm, SiN4 and NH3 total gas flow rate control the pressure in 7500-8000sccm, furnace chamber to be set in
1600-1700Kpa, radio-frequency power 8000-9000W, radio-frequency pulse on-off ratio are adjusted to 1:13-1:16；
D, vacuumize：When in-furnace temperature is down to 380-420 DEG C, single hop plated film complete, stop to furnace chamber be passed through SiN4 and
NH3, radio frequency is closed, and will be vacuumized in furnace chamber；
E, repeat step b-d, the multisection type plated film of required thickness is obtained.
Further, step b-d number of repetition is 4-6 times.
Closed due to being heated in step b, the furnace chamber in step c is constantly passed through and gas bleeding, therefore temperature can gradually drop
It is low.
The beneficial effects of the invention are as follows：The back of the body depositing process of the improvement PERC high-efficiency battery piece warpages of the present invention is because employing point
The circulation technology scheme of segmentation lapse of temperature, while avoid silicon chip when the back of the body plates and be constantly in the easy warpage of the condition of high temperature and reaction
Constant temperature too low the problem of being had an impact to coating quality, realize that the silicon chip after back of the body plating is not easy warpage, and overall uniform film thickness,
Improve the lifting of production efficiency and follow-up positive plating production capacity.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the statistical chart for falling piece rate in four positive plating one weeks of plug-in sheet machine before and after batch testing of the present invention improves；
Fig. 2 is the statistical chart of uniformity in the thickness piece of positive plated film and between piece before and after batch testing of the present invention improves；
Fig. 3 is the statistics for the silicon chip done over again by positive plated film aberration that batch testing statistics of the present invention improves front and rear production
Figure；
Fig. 4 is the statistical chart of uniformity in the thickness piece of silicon chip back of the body plated film and between piece before and after batch testing of the present invention improves.
Embodiment
Embodiment 1
A kind of back of the body depositing process of improvement PERC high-efficiency battery piece warpages, plated film is carried out to the back side of silicon chip using PEVCD, made
With multisection type plated film, the temperature in every section of coating process is cooled to 380-420 DEG C from 480-520 DEG C.
Specifically, the specific steps of the back of the body depositing process include：
A, stove is entered：The graphite boat for having inserted silicon chip is sent into furnace chamber, closes fire door；
B, heat up：Open heating and the temperature in furnace chamber is promoted to 480-520 DEG C；
C, single hop plated film：Furnace chamber stops heating, and is passed through SiN4 and NH3, and SiN4 flow is 650-700sccm, NH3's
Flow is that 7000-7500sccm, SiN4 and NH3 total gas flow rate control the pressure in 7500-8000sccm, furnace chamber to be set in
1600-1700Kpa, radio-frequency power 8000-9000W, radio-frequency pulse on-off ratio are adjusted to 1:13-1:16；
D, vacuumize：When in-furnace temperature is down to 380-420 DEG C, single hop plated film complete, stop to furnace chamber be passed through SiN4 and
NH3, radio frequency is closed, and will be vacuumized in furnace chamber；
E, repeat step b-d, the multisection type plated film of required thickness is obtained.
Step b-d number of repetition is 4-6 times.
6000 silicon chips of plating are carried on the back using the back of the body depositing process of existing process and the present embodiment and carry out the comparison of parameter, are compared
As a result as shown in table 1, for parameters using existing process as reference value, what it is higher than existing process is on the occasion of less than existing process
For negative value.
Table 1：
It can be seen from Table 1 that the circulation technology using segmented lapse of temperature in the present embodiment does not interfere with silicon chip
Coating quality, and the decline of silicon chip power will not be caused.
The improvement of angularity can not more intuitively provide measurement data, mainly falling by the positive plated film upper piece of follow-up silicon chip
Piece rate, the aberration situation of positive plated film and production do over again ratio to reflect the improvement of angularity
Specifically it is compared as follows：
1), after due to producing warpage when silicon chip, which is carried on the back, to be plated, silicon chip is just easily falling piece on plating plug-in sheet machine, before batch testing improves
The piece rate statistics of falling in four positive plating one weeks of plug-in sheet machine is shown in Fig. 1 afterwards.
Analysis chart 1, the silicon chip that the back of the body depositing process after the present embodiment improvement is produced, it is just falling piece rate on plating plug-in sheet machine
The technique tool before middle improvement significantly decreases compared with the prior art, therefore, it can be seen that the back of the body depositing process using the present embodiment
Silicon chip its angularity for carrying on the back plating is decreased obviously or is not likely to produce warpage.
2), after due to producing warpage when silicon chip, which is carried on the back, to be plated, when silicon chip just plates, between the piece of positive plated film thickness that silicon chip can be caused
And uniformity has an impact in piece, uniformity is shown in Fig. 2 to batch testing before and after improving in the thickness piece of positive plated film and between piece.
Analysis chart 2, the silicon chip that the back of the body depositing process after the present embodiment improvement is produced, its film thickness uniformity phase in positive plating
Have to the technique before improving in the prior art and be obviously improved, therefore, it can be seen that the back of the body depositing process institute using the present embodiment
Its angularity of the silicon chip of back of the body plating is decreased obviously or is not likely to produce warpage.
3), after due to producing warpage when silicon chip, which is carried on the back, to be plated, when silicon chip just plates, silicon chip can be caused can not to be pasted completely with graphite boat
Close, in turn result in and more positive plated film aberration piece is produced when silicon chip just plates, batch testing statistics improve front and rear production because of positive plated film
The silicon chip that aberration is done over again, rework data are shown in Fig. 3.
Analysis chart 3, the silicon chip that the back of the body depositing process after the present embodiment improvement is produced, it is in positive plating because of positive plated film aberration institute
The silicon chip ratio done over again is decreased obviously with respect to existing process, therefore, it can be seen that carrying on the back plating using the back of the body depositing process of the present embodiment
Silicon chip its angularity be decreased obviously or be not likely to produce warpage.
The silicon chip back of the body plated film film thickness uniformity situation of change that checking is produced using the present embodiment back of the body depositing process, batch testing
Uniformity is shown in Fig. 4 in the thickness piece of silicon chip back of the body plated film and between piece before and after improvement.
Back of the body depositing process after the present embodiment improves as seen in Figure 4 will not be carrying on the back the piece of plated film thickness and in piece
Uniformity has an impact, therefore using the circulation technology scheme of segmented lapse of temperature, can effectively avoid producing during silicon chip back of the body plating
Warpage, while the film thickness uniformity of the back of the body plated film of silicon chip is not influenceed.
By the silicon warp degree that conventional back of the body depositing process of the prior art is carried on the back after plating is higher, it is serious that fluctuating plate falls piece,
Cause positive back of the body plating production capacity nervous, just plating in diaphragm and uniformity is poor between piece；And carried on the back using the back of the body depositing process in the present embodiment
Silicon chip after plating, its angularity decline, and effectively raise the production capacity of silicon chip back of the body plating, and improve the production that silicon chip is just plating indirectly
Can, positive plated film aberration is also substantially made moderate progress, and the cell piece efficiency produced is unaffected.
The above-mentioned desirable embodiment according to the present invention is enlightenment, complete by above-mentioned description, relevant staff
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention'.This invention it is technical
Scope is not limited to the content on specification, it is necessary to determines its technical scope according to right.
Claims (3)
1. a kind of back of the body depositing process of improvement PERC high-efficiency battery piece warpages, plated film is carried out to the back side of silicon chip using PEVCD, it is special
Sign is：Using multisection type plated film, the temperature in every section of coating process is cooled to 380-420 DEG C from 480-520 DEG C.
2. the back of the body depositing process of improvement PERC high-efficiency battery piece warpages according to claim 1, it is characterised in that：The back of the body plates work
The specific steps of skill include：
A, stove is entered：The graphite boat for having inserted silicon chip is sent into furnace chamber, closes fire door；
B, heat up：Open heating and the temperature in furnace chamber is promoted to 480-520 DEG C；
C, single hop plated film：Furnace chamber stops heating, and is passed through SiN4 and NH3, and SiN4 flow is 650-700sccm, NH3 flow
The pressure in 7500-8000sccm, furnace chamber is controlled to be set in for 7000-7500sccm, SiN4 and NH3 total gas flow rate
1600-1700Kpa, radio-frequency power 8000-9000W, radio-frequency pulse on-off ratio are adjusted to 1:13-1:16；
D, vacuumize：When in-furnace temperature is down to 380-420 DEG C, single hop plated film is completed, and stops being passed through SiN4 and NH3 to furnace chamber,
Radio frequency is closed, and will be vacuumized in furnace chamber；
E, repeat step b-d, the multisection type plated film of required thickness is obtained.
3. the back of the body depositing process of improvement PERC high-efficiency battery piece warpages according to claim 2, it is characterised in that：Step b-d
Number of repetition be 4-6 times.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710846590.3A CN107502874B (en) | 2017-09-19 | 2017-09-19 | Improve the back depositing process of PERC high-efficiency battery piece warpage |
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| CN201710846590.3A CN107502874B (en) | 2017-09-19 | 2017-09-19 | Improve the back depositing process of PERC high-efficiency battery piece warpage |
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| CN107502874B CN107502874B (en) | 2019-04-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108183149A (en) * | 2017-12-27 | 2018-06-19 | 安徽银欣新能源科技有限公司 | A kind of production method of solar battery sheet |
| CN109360866A (en) * | 2018-09-25 | 2019-02-19 | 韩华新能源（启东）有限公司 | A kind of preparation method of three layers of silicon nitride film |
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| CN107502874B (en) | 2019-04-30 |
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