CN105624794A - Double annealing technology of polycrystalline silicon ingot casting - Google Patents
Double annealing technology of polycrystalline silicon ingot casting Download PDFInfo
- Publication number
- CN105624794A CN105624794A CN201610122934.1A CN201610122934A CN105624794A CN 105624794 A CN105624794 A CN 105624794A CN 201610122934 A CN201610122934 A CN 201610122934A CN 105624794 A CN105624794 A CN 105624794A
- Authority
- CN
- China
- Prior art keywords
- annealing
- silicon ingot
- temperature
- ingot casting
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Abstract
The invention provides a double annealing technology of polycrystalline silicon ingot casting. The technology comprises the following steps that silicon raw materials are subjected to first annealing after being subjected to heating, melting and crystal growth working procedure treatment in the ingot casting technology, wherein the annealing temperature is 1330-1380 DEG C, and the temperature is kept for 1-2.5 h; a silicon ingot subjected to first annealing is cooled by lowering the heating power and closing a heat insulation plate, and second annealing is carried out, wherein the second annealing temperature is 1150-1250 DEG C, and the temperature is kept for 0.5-1.5 h; follow-up working procedures are carried out. One in-furnace medium-high temperature annealing is added in the polycrystalline silicon ingot casting technological procedure, head and tail temperature difference and heat stress can be effectively lowered, heat stress is sufficiently released, and the mechanical property of the silicon ingot is effectively improved. Compared with the prior art, the quality of the silicon ingot can be effectively improved, the fragmenting, corner lack, edge breakage, the cracking rate in the segmentation process is lowered, the silicon slice output is improved, and the production cost is saved.
Description
Technical field
The invention belongs to polycrystalline silicon ingot casting technical field, it is specifically related to the second annealing technique of a kind of polycrystalline silicon ingot casting.
Background technology
Solar battery sheet Market competition, when global solar battery production capacity surplus, retains its competitive edge in the market, and cost is in particularly important status. At present, in order to reduce costs raising production capacity, more and more ingot casting manufacturers improves constantly charge amount so that it is be progressively increased to nearly 900kg by 700kg. Owing to charge amount increases, silicon ingot height also increases, in long brilliant process, the temperature head of top and bottom improves, meanwhile, in temperature-fall period, silicon ingot core temperature and lip temperature difference increase, and cause silicon ingot thermal stresses higher than low charge amount, cause silicon ingot subsurface defect to increase. Therefore, improve annealing process and raising silicon ingot quality is had significance.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, it is provided that a kind of can effectively reduce head and tail temperature difference and thermal stresses, raising silicon ingot mechanical property, the second annealing technique that reduces the polycrystalline silicon ingot casting of silicon ingot subsurface defect.
Technical problem to be solved by this invention is realized by following technical scheme. The present invention is the second annealing technique of a kind of polycrystalline silicon ingot casting, is characterized in, its step is as follows:
(1) heating of silicon raw material in casting ingot process, fusing, long brilliant operation carry out first time annealing after processing, and annealing temperature is 1330 ~ 1380 DEG C, insulation 1 ~ 2.5h;
(2) by reducing heating power and close thermal baffle, the silicon ingot after first time annealing being carried out cooling process, then carry out second time annealing, annealing temperature is 1150 ~ 1250 DEG C, and insulation 0.5 ~ 1.5h, then carries out subsequent handling.
The second annealing technique of polycrystalline silicon ingot casting of the present invention, preferred technical scheme or technology feature are further:
1, in step (1), the quality of described silicon raw material is greater than 800kg.
2, in step (1), the annealing temperature of described first time annealing is 1350 DEG C, insulation 2h.
3, in step (2), according to rate of temperature fall 1.5 ~ 2.0 DEG C/min, silicon ingot is cooled to second annealing temperature.
4, in step (2), the annealing temperature of described second time annealing is 1200 DEG C, insulation 1h.
Compared with prior art, the second annealing technique of polycrystalline silicon ingot casting of the present invention carries out in ingot furnace, this technique is greater than the polycrystalline silicon ingot casting of 800kg for charge amount, casting ingot process program increases high temperature annealing in a stove, can effectively reduce head and tail temperature difference and thermal stresses, abundant rejected heat stress, it is to increase silicon ingot mechanical property. The present invention can significantly improve silicon ingot quality, reduces fragment, the unfilled corner in slicing processes, collapses limit, crackle ratio, it is to increase silicon chip slice number, saves production cost.
Embodiment
Hereinafter further describe the concrete technical scheme of the present invention, so that the technician of this area understands the present invention further, and do not form the restriction to its right.
Embodiment 1, the second annealing technique of a kind of polycrystalline silicon ingot casting, its step is as follows:
(1) heating of silicon raw material in casting ingot process, fusing, long brilliant operation carry out first time annealing after processing, and annealing temperature is 1330 DEG C, insulation 1h;
(2) by reducing heating power and close thermal baffle, the silicon ingot after first time annealing being carried out cooling process, then carry out second time annealing, annealing temperature is 1150 DEG C, and insulation 0.5h, then carries out subsequent handling.
Embodiment 2, the second annealing technique of a kind of polycrystalline silicon ingot casting, its step is as follows:
(1) heating of silicon raw material in casting ingot process, fusing, long brilliant operation carry out first time annealing after processing, and annealing temperature is 1380 DEG C, insulation 2.5h;
(2) by reducing heating power and close thermal baffle, the silicon ingot after first time annealing being carried out cooling process, then carry out second time annealing, annealing temperature is 1250 DEG C, and insulation 1.5h, then carries out subsequent handling.
Embodiment 3, the second annealing technique of a kind of polycrystalline silicon ingot casting, its step is as follows:
(1) heating of silicon raw material in casting ingot process, fusing, long brilliant operation carry out first time annealing after processing, and annealing temperature is 1350 DEG C, insulation 2h;
(2) by reducing heating power and close thermal baffle, the silicon ingot after first time annealing being carried out cooling process, then carry out second time annealing, annealing temperature is 1200 DEG C, and insulation 1h, then carries out subsequent handling.
Embodiment 4, in the second annealing technique of the polycrystalline silicon ingot casting of embodiment 13 described in any one: in step (1), the quality of described silicon raw material is greater than 800kg.
Embodiment 5, in the second annealing technique of the polycrystalline silicon ingot casting of embodiment 14 described in any one: in step (2), according to rate of temperature fall 1.5 DEG C/min, silicon ingot is cooled to second annealing temperature.
Embodiment 6, in the second annealing technique of the polycrystalline silicon ingot casting of embodiment 14 described in any one: in step (2), according to rate of temperature fall 2 DEG C/min, silicon ingot is cooled to second annealing temperature.
Claims (5)
1. the second annealing technique of a polycrystalline silicon ingot casting, it is characterised in that, its step is as follows:
(1) heating of silicon raw material in casting ingot process, fusing, long brilliant operation carry out first time annealing after processing, and annealing temperature is 1330 ~ 1380 DEG C, insulation 1 ~ 2.5h;
(2) by reducing heating power and close thermal baffle, the silicon ingot after first time annealing being carried out cooling process, then carry out second time annealing, annealing temperature is 1150 ~ 1250 DEG C, and insulation 0.5 ~ 1.5h, then carries out subsequent handling.
2. the second annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that, in step (1), the quality of described silicon raw material is greater than 800kg.
3. the second annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that, in step (1), the annealing temperature of described first time annealing is 1350 DEG C, insulation 2h.
4. the second annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that, in step (2), according to rate of temperature fall 1.5 ~ 2.0 DEG C/min, silicon ingot is cooled to second annealing temperature.
5. the second annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that, in step (2), the annealing temperature of described second time annealing is 1200 DEG C, insulation 1h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122934.1A CN105624794B (en) | 2016-03-04 | 2016-03-04 | A kind of double annealing technique of polycrystalline silicon ingot casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610122934.1A CN105624794B (en) | 2016-03-04 | 2016-03-04 | A kind of double annealing technique of polycrystalline silicon ingot casting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105624794A true CN105624794A (en) | 2016-06-01 |
| CN105624794B CN105624794B (en) | 2018-03-27 |
Family
ID=56040123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610122934.1A Expired - Fee Related CN105624794B (en) | 2016-03-04 | 2016-03-04 | A kind of double annealing technique of polycrystalline silicon ingot casting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105624794B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087065A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting annealing process |
| CN106087052A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of double annealing technique of polycrystalline silicon ingot casting |
| CN108550525A (en) * | 2018-05-28 | 2018-09-18 | 武汉新芯集成电路制造有限公司 | Floating boom preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06211598A (en) * | 1993-01-19 | 1994-08-02 | Nippon Steel Corp | Silicon single crystal and its heat treatment |
| CN103046129A (en) * | 2013-01-28 | 2013-04-17 | 天津英利新能源有限公司 | Polycrystalline silicon ingot casting process |
| CN103361737A (en) * | 2013-07-25 | 2013-10-23 | 青岛隆盛晶硅科技有限公司 | Double annealing process for reducing back diffusion of impurity in polysilicon ingot |
-
2016
- 2016-03-04 CN CN201610122934.1A patent/CN105624794B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06211598A (en) * | 1993-01-19 | 1994-08-02 | Nippon Steel Corp | Silicon single crystal and its heat treatment |
| CN103046129A (en) * | 2013-01-28 | 2013-04-17 | 天津英利新能源有限公司 | Polycrystalline silicon ingot casting process |
| CN103361737A (en) * | 2013-07-25 | 2013-10-23 | 青岛隆盛晶硅科技有限公司 | Double annealing process for reducing back diffusion of impurity in polysilicon ingot |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087052A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of double annealing technique of polycrystalline silicon ingot casting |
| CN106087065A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting annealing process |
| CN108550525A (en) * | 2018-05-28 | 2018-09-18 | 武汉新芯集成电路制造有限公司 | Floating boom preparation method |
| US11107697B2 (en) | 2018-05-28 | 2021-08-31 | Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. | Floating gate fabrication method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105624794B (en) | 2018-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102877117B (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN102936747B (en) | Method for casting ingot of pseudo-single crystal through large-sized crucible | |
| CN102732959A (en) | Polysilicon ingot furnace and polysilicon ingot casting method | |
| CN204022995U (en) | A kind of novel ingot furnace thermal field structure | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN105624794A (en) | Double annealing technology of polycrystalline silicon ingot casting | |
| CN103014874A (en) | Sapphire crystal annealing process | |
| CN104213191A (en) | Semi-melting high-efficiency polycrystalline silicon ingot casting process | |
| CN102268729A (en) | 450 type ingot furnace and ingot casting process thereof | |
| CN103132142B (en) | Polycrystal silicon ingot and manufacture method thereof | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN103305924A (en) | Method for reducing dislocation of crystal inside silicon ingot in ingot casting process | |
| CN105088349A (en) | Ingot casting method for reducing polycrystalline silicon dislocation | |
| CN102943304A (en) | Polysilicon ingot and manufacturing method of same | |
| CN102409402A (en) | Ingot casting process for 650kg polycrystalline silicon | |
| CN102425006A (en) | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method | |
| CN104404618A (en) | Ingot casting process capable of reducing inefficient piece proportion of polycrystalline silicon battery piece | |
| CN109208072A (en) | A kind of method for crystallising improving polycrystalline silicon ingot casting bottom crystalline substance flower | |
| CN102787349A (en) | Ingot casting crucible and ingot casting device | |
| CN107142518B (en) | A kind of material technique of polycrystalline silicon ingot casting | |
| CN103397378A (en) | Preparation method of polycrystalline silicon ingot | |
| CN104695014A (en) | Annealing technique of cast polycrystalline silicon | |
| CN106884207B (en) | Annealing process for improving crystallization rate of polycrystalline silicon ingot | |
| CN104120492A (en) | Manufacturing process of efficient semi-molten polycrystalline ingot casting | |
| CN103243386A (en) | Polysilicon ingot-casting furnace system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180327 Termination date: 20190304 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |