CN105624794B - A kind of double annealing technique of polycrystalline silicon ingot casting - Google Patents
A kind of double annealing technique of polycrystalline silicon ingot casting Download PDFInfo
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- CN105624794B CN105624794B CN201610122934.1A CN201610122934A CN105624794B CN 105624794 B CN105624794 B CN 105624794B CN 201610122934 A CN201610122934 A CN 201610122934A CN 105624794 B CN105624794 B CN 105624794B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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Abstract
A kind of double annealing technique of polycrystalline silicon ingot casting, its step are as follows：Silicon raw material carries out first time annealing after the heating in casting ingot process, fusing, long brilliant process processing, and annealing temperature is 1330 ~ 1380 DEG C, is incubated 1 ~ 2.5h；Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then carries out second of annealing, double annealing temperature is 1150 ~ 1250 DEG C, is incubated 0.5 ~ 1.5h, then carries out subsequent handling.The present invention increases high temperature in a stove in polycrystalline silicon casting ingot process program and annealed, and can effectively reduce head and tail temperature difference and thermal stress, fully discharge thermal stress, effectively improve silicon ingot mechanical property.Compared with prior art, the present invention can effectively improve Ingot quality, reduce fragment in slicing processes, unfilled corner, chipping, crackle ratio, improve silicon chip slice number, save production cost.
Description
Technical field
The invention belongs to polycrystalline silicon ingot casting technical field, and in particular to a kind of double annealing technique of polycrystalline silicon ingot casting.
Background technology
Solar battery sheet Market competition, in the case of global solar battery production capacity surplus, protect in the market
Competitive advantage is held, cost is in particularly important status.At present, production capacity, increasing ingot casting factory are improved in order to reduce cost
Business improves constantly charge, it is progressively increased to nearly 900kg by 700kg.Due to charge increase, silicon ingot height also increases,
During long crystalline substance, the temperature difference of top and bottom improves, meanwhile, in temperature-fall period, silicon ingot central temperature and lip temperature
Difference increase, causes silicon ingot thermal stress higher than low charge, causes the increase of silicon ingot internal flaw.Therefore, annealing process pair is improved
It is significant to improve Ingot quality.
The content of the invention
The technical problems to be solved by the invention are in view of the shortcomings of the prior art, there is provided one kind can be reduced effectively end to end
Temperature difference and thermal stress, improve silicon ingot mechanical property, reduce silicon ingot internal flaw polycrystalline silicon ingot casting double annealing technique.
The technical problems to be solved by the invention are realized by following technical scheme.The present invention is a kind of polycrystalline
The double annealing technique of silicon ingot casting, it is characterized in, its step is as follows：
（1）Silicon raw material carries out first time annealing, annealing temperature after the heating in casting ingot process, fusing, long brilliant process processing
Spend for 1330 ~ 1380 DEG C, be incubated 1 ~ 2.5h；
（2）Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then
Carry out second to anneal, annealing temperature is 1150 ~ 1250 DEG C, is incubated 0.5 ~ 1.5h, then carries out subsequent handling.
The double annealing technique of polycrystalline silicon ingot casting of the present invention, further preferred technical scheme or technical characteristic
It is：
1st, in step（1）In, the quality of described silicon raw material is more than 800kg.
2nd, in step（1）In, the annealing temperature of annealing of described first time is 1350 DEG C, is incubated 2h.
3rd, in step（2）In, silicon ingot is cooled to double annealing temperature according to 1.5 ~ 2.0 DEG C/min of rate of temperature fall.
4th, in step（2）In, the annealing temperature of described second annealing is 1200 DEG C, is incubated 1h.
Compared with prior art, the double annealing technique of polycrystalline silicon ingot casting of the present invention is carried out in ingot furnace, the work
Skill is more than 800kg polycrystalline silicon ingot casting for charge, increases high temperature in a stove in casting ingot process program and anneals, can
Head and tail temperature difference and thermal stress are effectively reduced, fully discharges thermal stress, improves silicon ingot mechanical property.The present invention is remarkably improved
Ingot quality, reduce slicing processes in fragment, unfilled corner, chipping, crackle ratio, improve silicon chip slice number, save production cost.
Embodiment
Concrete technical scheme of the invention described further below, in order to which those skilled in the art is further understood that
The present invention, without forming the limitation to its right.
Embodiment 1, a kind of double annealing technique of polycrystalline silicon ingot casting, its step are as follows：
（1）Silicon raw material carries out first time annealing, annealing temperature after the heating in casting ingot process, fusing, long brilliant process processing
Spend for 1330 DEG C, be incubated 1h；
（2）Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then
Carry out second to anneal, annealing temperature is 1150 DEG C, is incubated 0.5h, then carries out subsequent handling.
Embodiment 2, a kind of double annealing technique of polycrystalline silicon ingot casting, its step are as follows：
（1）Silicon raw material carries out first time annealing, annealing temperature after the heating in casting ingot process, fusing, long brilliant process processing
Spend for 1380 DEG C, be incubated 2.5h；
（2）Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then
Carry out second to anneal, annealing temperature is 1250 DEG C, is incubated 1.5h, then carries out subsequent handling.
Embodiment 3, a kind of double annealing technique of polycrystalline silicon ingot casting, its step are as follows：
（1）Silicon raw material carries out first time annealing, annealing temperature after the heating in casting ingot process, fusing, long brilliant process processing
Spend for 1350 DEG C, be incubated 2h；
（2）Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then
Carry out second to anneal, annealing temperature is 1200 DEG C, is incubated 1h, then carries out subsequent handling.
Embodiment 4, in the double annealing technique of the polycrystalline silicon ingot casting described in any one of embodiment 1-3：In step（1）
In, the quality of described silicon raw material is more than 800kg.
Embodiment 5, in the double annealing technique of the polycrystalline silicon ingot casting described in any one of embodiment 1-4：In step（2）
In, silicon ingot is cooled to double annealing temperature according to 1.5 DEG C/min of rate of temperature fall.
Embodiment 6, in the double annealing technique of the polycrystalline silicon ingot casting described in any one of embodiment 1-4：In step（2）
In, silicon ingot is cooled to double annealing temperature according to 2 DEG C/min of rate of temperature fall.
Claims (4)
1. the double annealing technique of a kind of polycrystalline silicon ingot casting, it is characterised in that its step is as follows：
（1）Silicon raw material carries out first time annealing after the heating in casting ingot process, fusing, long brilliant process processing, and annealing temperature is
1330 ~ 1380 DEG C, it is incubated 1 ~ 2.5h；
（2）Cooling processing is carried out to the silicon ingot after first time anneals by reducing heating power and closing thermal insulation board, then carried out
Second of annealing, annealing temperature are 1150 ~ 1250 DEG C, are incubated 0.5 ~ 1.5h, then carry out subsequent handling；According to rate of temperature fall
Silicon ingot is cooled to double annealing temperature by 1.5 ~ 2.0 DEG C/min.
2. the double annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that in step（1）In, it is described
The quality of silicon raw material be more than 800kg.
3. the double annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that in step（1）In, it is described
First time annealing annealing temperature be 1350 DEG C, be incubated 2h.
4. the double annealing technique of polycrystalline silicon ingot casting according to claim 1, it is characterised in that in step（2）In, it is described
Second annealing annealing temperature be 1200 DEG C, be incubated 1h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610122934.1A CN105624794B (en) | 2016-03-04 | 2016-03-04 | A kind of double annealing technique of polycrystalline silicon ingot casting |
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| CN201610122934.1A CN105624794B (en) | 2016-03-04 | 2016-03-04 | A kind of double annealing technique of polycrystalline silicon ingot casting |
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| CN105624794A CN105624794A (en) | 2016-06-01 |
| CN105624794B true CN105624794B (en) | 2018-03-27 |
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| CN106087052A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of double annealing technique of polycrystalline silicon ingot casting |
| CN106087065A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting annealing process |
| CN108550525A (en) | 2018-05-28 | 2018-09-18 | 武汉新芯集成电路制造有限公司 | Floating boom preparation method |
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| JPH06211598A (en) * | 1993-01-19 | 1994-08-02 | Nippon Steel Corp | Silicon single crystal and its heat treatment |
| CN103046129B (en) * | 2013-01-28 | 2015-10-07 | 天津英利新能源有限公司 | Polycrystalline silicon casting ingot process |
| CN103361737B (en) * | 2013-07-25 | 2015-06-17 | 青岛隆盛晶硅科技有限公司 | Double annealing process for reducing back diffusion of impurity in polysilicon ingot |
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Granted publication date: 20180327 Termination date: 20190304 |