CN103746004B - The preparation method of solar battery sheet - Google Patents
The preparation method of solar battery sheet Download PDFInfo
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- CN103746004B CN103746004B CN201410014836.7A CN201410014836A CN103746004B CN 103746004 B CN103746004 B CN 103746004B CN 201410014836 A CN201410014836 A CN 201410014836A CN 103746004 B CN103746004 B CN 103746004B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 238000002161 passivation Methods 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 27
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 41
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000004062 sedimentation Methods 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 230000009466 transformation Effects 0.000 abstract description 11
- 239000011159 matrix material Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 238000013461 design Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000004087 circulation Effects 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses the preparation method of a kind of solar battery sheet.This preparation method includes passivation emitter and the step of coated with antireflection film, and wherein, the step of coated with antireflection film includes: before the step of passivation emitter, at the back side of silicon chip first time plated film, forms back side antireflective coating；And after the step of passivation emitter, at the front of silicon chip second time plated film, form front surface antireflection film.By before and after passivation emitter respectively in silicon chip back side and the method for front coated with antireflection film, passivation material in the step of passivation emitter can be effectively prevented and be stained with the back side of silicon chip, and then can effectively prevent metal paste from can not penetrate, when sintering, the juxtaposition metamorphose phenomenon that this passivation material causes, improve the ohm contact performance of metal paste and silicon chip matrix, improve the fill factor, curve factor of solar battery sheet, thus improve the photoelectric transformation efficiency of solar battery sheet.
Description
Technical field
The present invention relates to area of solar cell, in particular to the preparation method of a kind of solar battery sheet.
Background technology
Solaode is by large-scale application to every field, and the technological process of its good stability and maturation is its big rule
The basis of mould application.Crystal silicon solar batteries is when producing, it is necessary first to be carried out the silicon chip making crystal silicon solar batteries,
Reaching the structuring to silicon chip surface by Chemical cleaning to process, the silicon chip after then cleaning is diffused technique, and silicon chip is through boron
Diffusion technique forms P-N junction, afterwards the silicon chip forming P-N junction is carried out periphery etching process, to remove silicon in diffusion technique
The conductive layer that sheet edge is formed.It is then passed through chemical cleaning technology, to remove the glass formed in diffusion process at silicon chip surface
Glass layer.Then through PECVD(Plasma Enhanced Chemical Vapor Deposition, PECVD sinks
Area method) technique, depositing antireflection film silicon nitride layer, print electrode technique and sintering process etc. make and obtain satisfactory crystal silicon
Solar battery sheet.
The performance quality of crystal silicon is mainly embodied by its photoelectric transformation efficiency, and the quality of fill factor, curve factor (FF) directly determines crystalline substance
The height of the photoelectric transformation efficiency of silicon.In solar battery sheet production process, it will usually run into the photoelectricity caused because of the reduction of FF
The cell piece that conversion efficiency is relatively low.Being the FF of solar battery sheet to promote, research worker once attempted multiple method, example
As changed the metal paste that printing grid line is used.But, although the method for this replacing metal paste can be to a certain extent
Improve the FF of solar battery sheet, but it improves limitation.
Therefore, the method for the fill factor, curve factor promoting emitter solar battery sheet could be improved, fundamentally to promote solar energy
The fill factor, curve factor of cell piece, thus improve the photoelectric transformation efficiency of solaode.
Summary of the invention
It is desirable to provide the preparation method of a kind of solar battery sheet, to promote the fill factor, curve factor of solar battery sheet.
To achieve these goals, according to an aspect of the invention, it is provided the preparation method of a kind of solar battery sheet, should
Preparation method includes passivation emitter and the step of coated with antireflection film, and the step of coated with antireflection film includes: in the step of passivation emitter
Before Zhou, at the back side of silicon chip first time plated film, form back side antireflective coating；And after the step of passivation emitter, at silicon chip
Front second time plated film, formed front surface antireflection film.
Further, passivation emitter step forms alumina passivation layer.
Further, the thickness of alumina passivation layer is 0.5nm～30nm.
Further, the method forming alumina passivation layer is atomic layer deposition method, sputtering method, PECVD
Band electrodeposition process or sol-gal process.
Further, back side antireflective coating is identical with the material of front surface antireflection film, and forming method is identical.
Further, back side antireflective coating and front surface antireflection film are silicon nitride anti-reflecting film.
Further, the thickness of back side antireflective coating is 30nm～100nm；The thickness of front surface antireflection film is 70nm～90nm.
Further, back side antireflective coating and front surface antireflection film use PECVD sedimentation to be formed.
Further, also included before the step of passivation emitter: the diffusion carried out in order and the step of plasma etching
Suddenly；After second time plating steps, also include the step of printing-sintering.
Further, before the step of diffusion and after the step of passivation emitter, include the step of Chemical cleaning respectively.
The preparation method of application technical scheme solar battery sheet, by first at silicon chip back side before passivation emitter
Coated with antireflection film, again in the method for front side of silicon wafer coated with antireflection film after passivation emitter, it is possible to effectively at passivation emitter
Step in passivation material be stained with the back side of silicon chip, and then can effectively prevent metal paste from can not penetrate this passivation when sintering
The juxtaposition metamorphose phenomenon that layer material causes, improves the ohm contact performance of metal paste and silicon chip matrix, improves solar-electricity
The fill factor, curve factor of pond sheet, thus improve the photoelectric transformation efficiency of solar battery sheet.
Detailed description of the invention
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can be mutually combined.
The present invention is described in detail below in conjunction with embodiment.
As background technology is previously mentioned, in solar battery sheet production process, it will usually run into the light caused because of the reduction of FF
The cell piece that photoelectric transformation efficiency is relatively low.Inventor has carried out substantial amounts of research, finds under study for action at solar battery sheet
In production process, generally in the front deposit passivation layer of silicon chip, aluminium oxide such as can be used to be passivated N-type too as dielectric layer
The emitter stage of sun energy cell piece.But, in the step of front side of silicon wafer deposit passivation layer, the emitter stage of silicon chip is being passivated
When inevitably the back side at silicon chip be stained with passivating material, and when this passivating material contact with Si can affect follow-up
Metal paste sintering time sintering effect time, the lifting factor of solar battery sheet will be reduced, thus reduce solaode
The photoelectric transformation efficiency of sheet.
In order to solve this problem, in a kind of typical embodiment of the present invention, it is provided that the preparation of a kind of solar battery sheet
Method, this preparation method includes passivation emitter and the step of coated with antireflection film, and the step of coated with antireflection film includes: send out in passivation
Before the step of emitter-base bandgap grading, at the back side of silicon chip first time plated film, form back side antireflective coating；And after the step of passivation emitter,
At the front of silicon chip second time plated film, form front surface antireflection film.
The preparation method of above-mentioned solar battery sheet provided by the present invention, by first plating at silicon chip back side before passivation emitter
Antireflective coating, again in the method for front side of silicon wafer coated with antireflection film after passivation emitter, it is possible to is effectively prevented and launches in passivation
In the step of pole, passivation material is stained with the back side of silicon chip, and then it is miscellaneous effectively to prevent metal paste from can not penetrate this when sintering
The juxtaposition metamorphose phenomenon that matter causes, improves the ohm contact performance of metal paste and silicon chip matrix, thus improves solar-electricity
The fill factor, curve factor of pond sheet, improves photoelectric transformation efficiency.
In the above-mentioned preparation method of the present invention, the step of passivation emitter is to form passivation layer in the front of silicon chip, with N-type solar energy
As a example by battery, its emitter stage refers to the P-type silicon surface that silicon chip diffuses to form through boron.The purpose of passivation layer is formed at front side of silicon wafer
It is to reduce the photo-generated carrier recombination rate at silicon chip surface, improves the utilization rate to luminous energy.
In the above-mentioned preparation method of the present invention, passivation material be there is no special selectivity, as long as passivation emitter can be played, subtract
Few photo-generated carrier is in the function of the recombination rate of silicon chip surface.As a example by N-type solaode, use silicon nitride/oxidation
Silicon duplicature or aluminium oxide as passivation layer, can provide good chemical passivation performance for silicon chip surface.The most excellent
Form slection becomes alumina passivation layer.When aluminium oxide is as passivation layer, it is possible to form one layer in the interface of boron emitter surface and fix negative
Electric charge, the electric field in silicon chip surface generation can will diffuse into the minority carrier (electronics) come on surface and reflect back, greatly subtract
Lack the quantity of minority carrier near silicon chip surface, thus decreased the photo-generated carrier speed in surface recombination, can be silicon
Sheet surface provides good field effect passivation.In one preferred embodiment of the present invention, the thickness of alumina passivation layer is
0.5nm～30nm, controls in the thickness range of 0.5nm～30nm emitter stage to solar battery sheet by alumina passivation layer
Passivation effect is preferable, and is difficult to adversely affect the emitter surface of boron diffusion.
In the above-mentioned preparation method of the present invention, the method forming alumina passivation layer has multiple, present invention preferably employs atomic layer deposition
Area method, sputtering method, PECVD band electrodeposition process or sol-gal process, said method all can form aluminium oxide
Passivation layer.In the above-mentioned methods, atomic layer deposition method, this method is more preferably used can to accurately control the life of alumina layer
Long quality, thus be more beneficial for obtaining the ultrathin alumina passivation layer with high homogeneity.
In the above-mentioned preparation method of the present invention, it is additionally included in the step of the front and back coated with antireflection film respectively of silicon chip, to the back side
Antireflective coating is the most identical with the material of front surface antireflection film and forming method is the most identical there is no particular/special requirement, as long as can be formed
The antireflective coating of antireflective coating and formation can realize reducing the effect of luminous reflectance.In the present invention, it is preferred to back side antireflective coating
Identical with the material of front surface antireflection film, forming method is identical.Identical antireflection film material is used to have with identical forming method
It is beneficial to, on the basis of ensureing anti-reflective effect, maintain the stability of technique, improves production efficiency.
In the step of the front and back coated with antireflection film respectively of above-mentioned silicon chip, the material of antireflective coating can be silicon nitride or oxygen
SiClx；The present invention preferred back side antireflective coating and front surface antireflection film are silicon nitride anti-reflecting film, and silicon nitride is as antireflective coating
Both can play antireflective, improve the efficiency of light energy utilization, additionally it is possible to play certain passivation.More preferably front surface antireflection film
Thickness is 70nm～90nm, and the thickness of back side antireflective coating is 30nm～100nm.By the THICKNESS CONTROL of antireflective coating at above-mentioned model
In enclosing, the color of cell piece can be made to keep preferable absorbing properties, and the antireflective coating outside above-mentioned thickness range easily makes formation
The color of cell piece changes, thus weakens antireflective ability, affects absorbing properties.
Step at above-mentioned silicon chip back side and front coated with antireflection film can use multiple method, as long as can be in silicon chip back side and front
The method of coated with antireflection film is used equally to the present invention, in addition to the deposition process of chain type, also can use sedimentation or the steaming of tubular type
Coating technology.In the present invention, it is preferred to use PECVD to form front surface antireflection film and back side antireflective coating.PECVD has
Have that pin hole is less, deposit temperature required low, sedimentation rate is fast, quality of forming film good, the advantage not being easily cracked.
In the above-mentioned preparation method of the present invention, also included before the step of passivation emitter: by N-type solar battery sheet
The preparation flow diffusion that carries out of order and the step of plasma etching, and after second time plating steps, also include printing
The step of sintering.Diffusion step is to form P-N junction, and the step of plasma etching is after completing diffusion step
Using plasma etching, it is to remove the conductive layer that in diffusion technique, silicon chip edge is formed.Second time plated film step it
The temperature preferably sintered in the step of rear printing-sintering is 630 DEG C～870 DEG C, and sintering can make metal paste with silica-based at such a temperature
Body forms good Ohmic contact.
In the above-mentioned preparation method of the present invention, wrap respectively before the step of diffusion and after the step of passivation emitter
Include the step of Chemical cleaning.Realize the structuring to silicon chip surface by Chemical cleaning before diffusion to process, form inverted pyramid type
Matte structure.Carrying out Chemical cleaning after the step of passivation emitter is to be formed at silicon chip surface in diffusion process to remove
Glassy layer.
Below in conjunction with specific embodiment 1 to 4 and comparative example 1, beneficial effects of the present invention is described.
Embodiment 1
Carry out Chemical cleaning successively according to the technological process of production of monocrystal silicon N-type solar battery sheet, chemistry system is tied, plasma is carved
After erosion, Chemical cleaning, obtain the silicon chip with P-N junction, initially with PECVD in backside deposition a layer thickness of silicon chip be
70nm silicon nitride anti-reflecting film, the design parameter of PECVD device is temperature 400 degree, pressure 0.28mbar, NH3:
SiH4=2400:1050sccm, speed 200cm/min；Use thermal atomic layer sedimentation to deposit a layer thickness in the front of silicon chip again to be
The alumina passivation layer of 5nm, the design parameter of thermal atomic layer deposition is temperature 200 degree, and ALD deposition cycle is 39 circulations；So
It is 80nm silicon nitride anti-reflecting film that rear use PECVD deposits a layer thickness in the front of silicon chip, the PECVD of front deposition
The design parameter of equipment is temperature 400 degree, pressure 0.28mbar, NH3: SiH4=2400:1050sccm, speed 175cm/min；
Finally carry out printing-sintering and prepare N-type solar battery sheet.
The fill factor, curve factor using Germany's obtained N-type solar battery sheet of Halm battery testing separator test is about 78.8%,
Photoelectric transformation efficiency is 19.6%.
Embodiment 2
Carry out Chemical cleaning successively according to the technological process of production of monocrystal silicon N-type solar battery sheet, chemistry system is tied, plasma is carved
After erosion, Chemical cleaning, obtain the silicon chip with P-N junction, initially with PECVD in backside deposition a layer thickness of silicon chip be
30nm silicon nitride anti-reflecting film, the design parameter of PECVD device is temperature 400 degree, pressure 0.28mbar, NH3:
SiH4=2400:1050sccm, speed 450cm/min；Use thermal atomic layer sedimentation to deposit a layer thickness in the front of silicon chip again to be
The alumina passivation layer of 0.5nm, the design parameter of thermal atomic layer deposition is temperature 200 degree, and ALD deposition cycle is 7 circulations；
Finally using PECVD to deposit a layer thickness in the front of silicon chip is 90nm silicon nitride anti-reflecting film, the PECVD of front deposition
The design parameter of equipment is temperature 400 degree, pressure 0.28mbar, NH3: SiH4=2400:1050sccm, speed 160cm/min.
Finally carry out printing-sintering and prepare N-type solar battery sheet.
The fill factor, curve factor using Germany's obtained N-type solar battery sheet of Halm battery testing separator test is 78.9%, photoelectricity
Conversion efficiency is 19.62%.
Embodiment 3
Carry out Chemical cleaning successively according to the technological process of production of monocrystal silicon N-type solar battery sheet, chemistry system is tied, plasma is carved
After erosion, Chemical cleaning, obtain the silicon chip with P-N junction, initially with PECVD in backside deposition a layer thickness of silicon chip be
100nm silicon nitride anti-reflecting film, the design parameter of PECVD device is temperature 400 degree, pressure 0.28mbar, NH3:
SiH4=2400:1050sccm, speed 160cm/min；Use thermal atomic layer sedimentation to deposit a layer thickness in the front of silicon chip again to be
The alumina passivation layer of 30nm, the design parameter of thermal atomic layer deposition is temperature 200 degree, and ALD deposition cycle is 390 circulations；
Finally using PECVD to deposit a layer thickness in the front of silicon chip is 70nm silicon nitride anti-reflecting film, the PECVD of front deposition
The design parameter of equipment is temperature 400 degree, pressure 0.28mbar, NH3: SiH4=2400:1050sccm, speed 200cm/min.
Finally carry out printing-sintering and prepare N-type solar battery sheet.
The fill factor, curve factor using Germany's obtained N-type solar battery sheet of Halm battery testing separator test is 78.95%, light
Photoelectric transformation efficiency is 19.65%.
Embodiment 4
Carry out Chemical cleaning successively according to the technological process of production of monocrystal silicon N-type solar battery sheet, chemistry system is tied, plasma is carved
After erosion, Chemical cleaning, obtain the silicon chip with P-N junction, initially with PECVD in backside deposition a layer thickness of silicon chip be
25nm silicon nitride anti-reflecting film, the design parameter of PECVD device is temperature 400 degree, pressure 0.28mbar, NH3:
SiH4=2400:1050sccm, speed 500cm/min；Use thermal atomic layer sedimentation to deposit a layer thickness in the front of silicon chip again to be
The alumina passivation layer of 35nm, the design parameter of thermal atomic layer deposition is temperature 200 degree, and ALD deposition cycle is 455 circulations；
Finally using PECVD to deposit a layer thickness in the front of silicon chip is 100nm silicon nitride anti-reflecting film, the PECVD of front deposition
The design parameter of equipment is temperature 400 degree, pressure 0.28mbar, NH3: SiH4=2400:1050sccm, speed 140cm/min.
Finally carry out printing-sintering and prepare N-type solar battery sheet.
The fill factor, curve factor using Germany's obtained N-type solar battery sheet of Halm battery testing separator test is 75.2%, photoelectricity
Conversion efficiency is 17.4%.
Comparative example 1
Carry out Chemical cleaning successively according to the technological process of production of monocrystal silicon N-type solar battery sheet, chemistry system is tied, plasma is carved
After erosion, Chemical cleaning, obtain the silicon chip with P-N junction, deposit one layer initially with thermal atomic layer sedimentation in the front of silicon chip
Thickness is the alumina passivation layer of 5nm, and the design parameter of thermal atomic layer deposition method aluminium oxide is set to temperature 200 degree, ALD
Deposition cycle is 65 circulations, and then employing PECVD is at the front and back deposited silicon nitride antireflective coating of silicon chip, front
The thickness of silicon nitride anti-reflecting film is 80nm, and the thickness of the silicon nitride anti-reflecting film at the back side is the concrete of 40nm, PECVD deposition
Parameter is set to temperature 400 degree, pressure 0.28mbar, NH3: SiH4=2400:1050sccm, speed 175cm/min during the deposition of front,
During backside deposition, speed is 200cm/min.；Finally carry out printing-sintering and prepare N-type solar battery sheet.
The fill factor, curve factor using Germany's obtained N-type solar battery sheet of Halm battery testing separator test is 77.8%, photoelectricity
Conversion efficiency is 19.55%.
As can be seen from the above description, embodiment 1～4 provided by the present invention uses stepped depositions nitrogen provided by the present invention
The method of SiClx antireflective coating, when efficiently avoid deposition of aluminium oxide passivation layer, aluminium oxide contacts with the direct of the silicon materials at the back side.
(implement when the thickness of alumina passivation layer and front and back antireflective coating is all in the range of corresponding (preferred for this invention)
Example 1-3 and comparative example 1), the method using stepped depositions silicon nitride anti-reflecting film provided by the present invention, compare N in comparative example 1
The preparation method of type solar battery sheet, hence it is evident that improve the performance of the alloy-layer that metal paste is formed when sintering, improve N
The fill factor, curve factor of type solaode, and then improve the photoelectric transformation efficiency of N-type solaode.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for those skilled in the art
For, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of being made, etc.
With replacement, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a preparation method for solar battery sheet, including passivation emitter and the step of coated with antireflection film, it is characterised in that institute
The step stating coated with antireflection film includes:
Before the step of described passivation emitter, at the back side of silicon chip first time plated film, form back side antireflective coating；And
After the step of described passivation emitter, at the front of described silicon chip second time plated film, form front surface antireflection film；
Described preparation method, after described second time plating steps, also includes the step of printing-sintering.
Preparation method the most according to claim 1, it is characterised in that form aluminium oxide passivation in described passivation emitter step
Layer.
Preparation method the most according to claim 2, it is characterised in that the thickness of described alumina passivation layer is 0.5nm～30nm.
Preparation method the most according to claim 2, it is characterised in that the method for described formation alumina passivation layer is hot atom
Layer sedimentation, sputtering method, PECVD band electrodeposition process or sol-gal process.
Preparation method the most according to claim 1, it is characterised in that described back side antireflective coating and described front surface antireflection film
Material identical, and forming method is identical.
Preparation method the most according to claim 5, it is characterised in that described back side antireflective coating and described front surface antireflection film
It is silicon nitride anti-reflecting film.
Preparation method the most according to claim 6, it is characterised in that the thickness of described back side antireflective coating is 30nm～100nm；
The thickness of described front surface antireflection film is 70nm～90nm.
8. according to the preparation method described in claim 6 or 7, it is characterised in that described back side antireflective coating and the anti-reflection of described front
Penetrating film uses PECVD to be formed.
Preparation method the most according to claim 1, it is characterised in that described before the step of described passivation emitter
Also include before plated film: the diffusion carried out in order and plasma etching step.
Preparation method the most according to claim 9, it is characterised in that before described diffusion step and described blunt
The step of Chemical cleaning is included respectively after changing the step of emitter stage.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107502874A (en) * | 2017-09-19 | 2017-12-22 | 常州亿晶光电科技有限公司 | Improve the back of the body depositing process of PERC high-efficiency battery piece warpages |
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| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102800753A (en) * | 2012-08-16 | 2012-11-28 | 英利能源（中国）有限公司 | Method for preparing crystalline silicon solar cell |
| CN103325885A (en) * | 2013-05-29 | 2013-09-25 | 英利集团有限公司 | P-shaped back passivation solar cell and manufacturing method thereof |
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| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
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