CN107154437A - The preparation method of solar battery antireflective film - Google Patents
The preparation method of solar battery antireflective film Download PDFInfo
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- CN107154437A CN107154437A CN201710521556.9A CN201710521556A CN107154437A CN 107154437 A CN107154437 A CN 107154437A CN 201710521556 A CN201710521556 A CN 201710521556A CN 107154437 A CN107154437 A CN 107154437A
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- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 37
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 17
- 238000000576 coating method Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation method of solar battery antireflective film, including：The SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes are used on the smooth surface of crystal silicon chip after the diffusion.Technical scheme technique is simple, and the damage to crystal silicon chip is small, is conducive to improving the conversion efficiency and open-circuit voltage of battery, is also beneficial to improve the uniformity of film deposition in coating process.
Description
Technical field
The present invention relates to manufacture of solar cells technology field, more particularly to a kind of solar battery antireflective film
Preparation method.
Background technology
In solar cell large-scale production, increase the utilization of light frequently with the mode in silicon chip surface depositing antireflection film
Rate, lifts battery conversion efficiency.Common film mainly has silicon nitride SiNx, and its film layer is usually 1-5 layers.Silicon nitride SiNx is thin
Vapour deposition (PECVD, Plasma Enhanced the Chemical Vapor of many using plasma enhancing chemistry of film
Deposition) prepared by the mode of deposition, with reflection preventing ability and the characteristics of body good passivation effect, but different film layers
The lifting of cell conversion efficiency is then limited between silicon nitride film and with silicon substrate combination interface state height.
The content of the invention
Small, the system of the simple solar battery antireflective film of technique is damaged to silicon chip it is an object of the invention to provide a kind of
Preparation Method.
To solve the above problems, the present invention provides a kind of preparation method of solar battery antireflective film：It is included in diffusion
The SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes are used on the smooth surface of crystal silicon chip afterwards.
Optionally, the SiNx antireflective coatings refractive index fades to linear gradient.
Optionally, the excursion of the SiNx antireflective coatings refractive index is [1.8,2.5].
Optionally, included using the SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes：
It is passed through SiH4And NH3Mixed gas；
The NH being passed through is kept during PECVD3Flow it is constant, change the SiH that is passed through4Flow.
Optionally, included using the SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes：
It is passed through SiH4And NH3Mixed gas；
The NH being passed through is kept during PECVD3Flow it is constant, reduce it is per second in the SiH that is passed through4Flow.
Optionally, it is passed through SiH4And NH3Mixed gas include：With SiH4And NH3Volume ratio be 1:3, SiH4It is initial
Flow is 1500sccm, NH3Initial flow be passed through SiH for 4500sccm4And NH3Mixed gas.
Optionally, the SiH being passed through is changed4Flow include：The SiH being passed through is changed with the 1.5sccm per second that successively decreases4Flow.
Optionally, it is passed through SiH4And NH3Mixed gas include：With SiH4And NH3Volume ratio be 1:5, SiH4It is initial
Flow is 1000sccm, NH3Initial flow be passed through SiH for 5000sccm4And NH3Mixed gas.
Optionally, the SiH being passed through is changed4Flow include：The SiH being passed through is changed with the 1sccm per second that successively decreases4Flow.
Optionally, the thickness of the SiNx antireflective coatings of gradually changed refractive index is between 65nm-100nm.
Compared with prior art, technical scheme has the advantages that：
The present invention is once sequentially depositing gradually changed refractive index from bottom to top using PECVD device on the smooth surface of crystal silicon chip
SiNx antireflective coatings, namely the antireflective coating includes the SiNx films of different refractivity, due to that can deposit different refractivity
SiNx films, therefore the film layer of antireflective coating is not limited to the SiNx films of limited film layer quantity, in addition, the refractive index of SiNx films
Increase over time refractive index to be gradually reduced, the refractive index closer to layer deposition SiNx films is higher, closer to top layer deposition
The refractive index of SiNx films is lower, and the passivation effect of bottom is also improved while reducing reflectivity, and then is conducive to improving electricity
The conversion efficiency and open-circuit voltage in pond, are also beneficial to improve the uniformity of film deposition in coating process.In addition, by once
The SiNx antireflective coatings technique of PECVD formation gradually changed refractive indexes is simple and small to the damage of crystal silicon chip.
Brief description of the drawings
Fig. 1 is the schematic diagram of antireflective coating；
Fig. 2 is the schematic diagram of the SiNx antireflective coatings of the gradually changed refractive index of the embodiment of the present invention.
Embodiment
Embodiment of the present invention provides a kind of preparation method of solar battery antireflective film, including：Crystalline substance after the diffusion
The SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes are used on the smooth surface of body silicon chip.
Technical scheme is described in further detail below in conjunction with the drawings and specific embodiments.According to following theory
Bright and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form
And non-accurately ratio is used, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment 1
The preparation method of solar battery antireflective film comprises the following steps in the present embodiment：
(1) 156mm × 156mm crystal silicon chips are chosen, to it after making herbs into wool, diffusion, etching technics, load tubular type
In PECVD.
(2) it is passed through SiH4And NH3Mixed gas, SiH4And NH3Initial volume ratio be 1:3, SiH4Initial flow be
1500sccm, NH3Initial flow be 4500sccm, depositing temperature be 480 DEG C.
(3) NH being passed through3Flow keep the gas flow of constant, to be passed through silane to successively decrease each second in coating process
1.5sccm, sedimentation time is 700 seconds.
Fig. 2 is the schematic diagram of the SiNx antireflective coatings of the gradually changed refractive index of the embodiment of the present invention, passes through the skill of the present embodiment
Art scheme, obtains the film layer 3 of gradually changed refractive index as shown in Figure 2, film layer 3 include countless gradual change film layer n1, n2, n3,
N4, n5, n6 etc..Fig. 1 is using existing plated film schemes generation to include film layer 1 and film in the schematic diagram of existing antireflective coating, Fig. 1
The antireflective coating of the limited film layer quantity of layer 2.The antireflective coating shown in Fig. 2 generated using the present embodiment method, reduces film
The difference of refractive index between layer, and then also reduce the interfacial state of different film layers.
The SiNx antireflectives of gradually changed refractive index of the refractive index between [1.8,2.5] can be prepared by above-mentioned (1) to (3)
Film, and by the gas flow of change silane linearly or nonlinearly, the folding of the SiNx antireflective coatings of deposition acquisition can be caused
Penetrate the linear gradual change of rate or non-linear gradual change.
(4) solar battery sheet is prepared by silk-screen printing technique, obtained below by different coating process
Open-circuit voltage Uoc, short circuit current flow Isc, fill factor, curve factor FF, the efficiency Ncell relevant parameter of solar cell.
Table 1
| Technique | Uoc | Isc | FF | Ncell |
| Conventional antireflective coating technique | 0 | 0 | 0 | 0 |
| Gradual change antireflective coating technique | 0.0015 | 0.04 | 0.1 | 0.15% |
As can be seen from Table 1, Uoc, Isc of the solar cell obtained by gradual change antireflective coating technique are above routine
The Uoc and Isc for the solar cell that antireflective coating technique is obtained, and its efficiency gain 0.15%, the photoelectricity of solar cell turn
Efficiency is changed to significantly improve.
Embodiment 2
The preparation method of solar battery antireflective film comprises the following steps in the present embodiment：
(1) 156mm × 156mm crystal silicon chips are chosen, to it after making herbs into wool, diffusion, etching technics, load tubular type
In PECVD.
(2) it is passed through SiH4And NH3Mixed gas, SiH4And NH3Initial volume ratio be 1:5, SiH4Initial flow be
1000sccm,NH3Initial flow be 5000sccm, depositing temperature be 480 DEG C.
(3) NH being passed through3Flow keep the gas flow of constant, to be passed through silane to successively decrease each second in coating process
1sccm, sedimentation time is 650 seconds.
Fig. 2 is the schematic diagram of the SiNx antireflective coatings of the gradually changed refractive index of the embodiment of the present invention, passes through the skill of the present embodiment
Art scheme, obtains the film layer 3 of gradually changed refractive index as shown in Figure 2, film layer 3 include countless gradual change film layer n1, n2, n3,
N4, n5, n6 etc..Fig. 1 is using existing plated film schemes generation to include film layer 1 and film in the schematic diagram of existing antireflective coating, Fig. 1
The antireflective coating of the limited film layer quantity of layer 2.The antireflective coating shown in Fig. 2 generated using the present embodiment method, reduces film
The difference of refractive index between layer, and then also reduce the interfacial state of different film layers.
The SiNx antireflectives of gradually changed refractive index of the refractive index between [1.8,2.5] can be prepared by above-mentioned (1) to (3)
Film, and by the gas flow of change silane linearly or nonlinearly, the folding of the SiNx antireflective coatings of deposition acquisition can be caused
Penetrate that rate is linear or non-linear gradual change.
(4) solar battery sheet is prepared by silk-screen printing technique, obtained below by different coating process
Open-circuit voltage Uoc, short circuit current flow Isc, fill factor, curve factor FF, the efficiency Ncell relevant parameter of solar cell.
Table 2
| Technique | Uoc | Isc | FF | Ncell |
| Conventional antireflective coating technique | 0 | 0 | 0 | 0 |
| Gradual change antireflective coating technique | 0.0005 | 0.03 | 0.2 | 0.10% |
As can be seen from Table 2, Uoc, Isc of the solar cell obtained by gradual change antireflective coating technique are above routine
The Uoc and Isc for the solar cell that antireflective coating technique is obtained, and its efficiency gain 0.10%, the photoelectricity of solar cell turn
Efficiency is changed to significantly improve.
The present invention will be described for specific embodiment listed above, it should be pointed out that above-described embodiment is served only for this
Invention is described further, and does not represent protection scope of the present invention, other people according to the present invention prompting make it is nonessential
Modification and adjustment, still fall within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of solar battery antireflective film, it is characterised in that including：Crystal silicon chip after the diffusion by
The SiNx antireflective coatings of PECVD primary depositing gradually changed refractive indexes are used in smooth surface.
2. the preparation method of solar battery antireflective film according to claim 1, it is characterised in that the SiNx anti-reflections
That penetrates film refractive index fades to linear gradient.
3. the preparation method of solar battery antireflective film according to claim 1 or 2, it is characterised in that the SiNx
The excursion of antireflective coating refractive index is [1.8,2.5].
4. the preparation method of solar battery antireflective film according to claim 1, it is characterised in that use PECVD mono-
The SiNx antireflective coatings of secondary deposition gradually changed refractive index include：
It is passed through SiH4And NH3Mixed gas；
The NH being passed through is kept during PECVD3Flow it is constant, change the SiH that is passed through4Flow.
5. the preparation method of solar battery antireflective film according to claim 1, it is characterised in that use PECVD mono-
The SiNx antireflective coatings of secondary deposition gradually changed refractive index include：
It is passed through SiH4And NH3Mixed gas；
The NH being passed through is kept during PECVD3Flow it is constant, reduce it is per second in the SiH that is passed through4Flow.
6. the preparation method of solar battery antireflective film according to claim 4, it is characterised in that be passed through SiH4And NH3
Mixed gas include：With SiH4And NH3Volume ratio be 1:3, SiH4Initial flow be 1500sccm, NH3Initial flow
SiH is passed through for 4500sccm4And NH3Mixed gas.
7. the preparation method of solar battery antireflective film according to claim 6, it is characterised in that change what is be passed through
SiH4Flow include：The SiH being passed through is changed with the 1.5sccm per second that successively decreases4Flow.
8. the preparation method of solar battery antireflective film according to claim 4, it is characterised in that be passed through SiH4And NH3
Mixed gas include：With SiH4And NH3Volume ratio be 1:5, SiH4Initial flow be 1000sccm, NH3Initial flow
SiH is passed through for 5000sccm4And NH3Mixed gas.
9. the preparation method of solar battery antireflective film according to claim 8, it is characterised in that change what is be passed through
SiH4Flow include：The SiH being passed through is changed with the 1sccm per second that successively decreases4Flow.
10. the preparation method of solar battery antireflective film according to claim 1, it is characterised in that gradually changed refractive index
SiNx antireflective coatings thickness between 65nm-100nm.
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| CN201710521556.9A CN107154437A (en) | 2017-06-30 | 2017-06-30 | The preparation method of solar battery antireflective film |
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| CN201710521556.9A CN107154437A (en) | 2017-06-30 | 2017-06-30 | The preparation method of solar battery antireflective film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887473A (en) * | 2017-11-07 | 2018-04-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar cell continuous gradation membrane preparation method |
| CN109037360A (en) * | 2018-08-09 | 2018-12-18 | 润峰电力有限公司 | A kind of solar cell inactivating antireflective film and its coating process |
| CN109243969A (en) * | 2018-08-31 | 2019-01-18 | 常州亿晶光电科技有限公司 | Tubular type PECVD silicon nitride gradual change membrane process |
| CN109545710A (en) * | 2018-09-29 | 2019-03-29 | 东方日升新能源股份有限公司 | A kind of film plating process reducing refractive index |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| CN102534547A (en) * | 2011-12-16 | 2012-07-04 | 合肥晶澳太阳能科技有限公司 | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell |
| CN104952978A (en) * | 2015-05-26 | 2015-09-30 | 江苏荣马新能源有限公司 | Solar cell coating technology |
-
2017
- 2017-06-30 CN CN201710521556.9A patent/CN107154437A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| CN102534547A (en) * | 2011-12-16 | 2012-07-04 | 合肥晶澳太阳能科技有限公司 | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell |
| CN104952978A (en) * | 2015-05-26 | 2015-09-30 | 江苏荣马新能源有限公司 | Solar cell coating technology |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887473A (en) * | 2017-11-07 | 2018-04-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar cell continuous gradation membrane preparation method |
| CN109037360A (en) * | 2018-08-09 | 2018-12-18 | 润峰电力有限公司 | A kind of solar cell inactivating antireflective film and its coating process |
| CN109243969A (en) * | 2018-08-31 | 2019-01-18 | 常州亿晶光电科技有限公司 | Tubular type PECVD silicon nitride gradual change membrane process |
| CN109545710A (en) * | 2018-09-29 | 2019-03-29 | 东方日升新能源股份有限公司 | A kind of film plating process reducing refractive index |
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