CN206814841U - The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings - Google Patents
The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings Download PDFInfo
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- CN206814841U CN206814841U CN201720514909.8U CN201720514909U CN206814841U CN 206814841 U CN206814841 U CN 206814841U CN 201720514909 U CN201720514909 U CN 201720514909U CN 206814841 U CN206814841 U CN 206814841U
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- graphite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of graphite carrying plate structure of board-like above and below PECVD plated films equipment integrating, the graphite carrying plate has multiple graphite frame units, it is characterized in that each graphite frame unit is in inverted positive truncated rectangular pyramids structure, the upper bottom edge of positive truncated rectangular pyramids is graphite frame, four sides of positive truncated rectangular pyramids are graphite cake, the upper bottom of positive truncated rectangular pyramids to hollow formation cavity of going to the bottom；Between upper bottom edge and the length of side of bottom, silicon chip is placed on the side of positive truncated rectangular pyramids the length of side of silicon chip.During producing solar panel, by cell piece after containing the upper and lower plated film equipment integratings of PECVD of the present utility model, cell piece front prints without white edge, without fulcrum, and the back side is without around plating, the positive back side color uniformity of cell piece.
Description
Technical field
The utility model belongs to the technical field of solar panel production equipment, specifically a kind of board-like above and below PECVD
The graphite carrying plate structure of plated film equipment integrating.
Background technology
In order to reduce light energy of the solar cell surface because of reflection loss, using vacuum vapor deposition method, vapor growth method or
Other chemical methodes, single or multiple lift passivating film is plated in battery front side, plays a part of surface passivation and antireflective, to carry
The photoelectric current and photoelectric transformation efficiency of high battery.
In solar cell fabrication process, plasma reinforced chemical vapour deposition (PECVD) is a kind of generally to be used
For preparing a kind of method of battery surface antireflective coating.PECVD is to make the gas electricity containing film composed atom by microwave
From being partially formed plasma, because plasma chemical activity is strong, is easily reacting, go out frozen composition in deposition on substrate
Film.
In order to improve the transformation efficiency of cell piece, increase back of the body passivation technology at the conventional batteries back side, be more ripe at present
Technology.PERC cell backsides typically overleaf grow AlOx/SiNx stack membranes using board-like PECVD device, and the back side is completed
After passivating film, enter next process and carry out positive SiNx depositions.Because positive back side film is completed on different devices respectively,
On the one hand automation and artificial input are added, causes battery manufacture cost increase；On the other hand, in silicon slice transmission course,
Pollution and the probability increase of processing procedure exception are introduced, causes yield to decline.At present, existing device manufactory produces positive back side coating film
All-in-one, equipment body structure are divided into three chambers, and wherein PM1 and PM2 use upper plated film mode, deposited respectively in silicon chip back side
AlOx/SiNx stack membranes；PM3 uses lower plated film mode, grows layer of sin x films in front side of silicon wafer.Silicon chip is in coating process
In, due to being placed on graphite carrying plate, there is the contact of certain area with support plate, cause the positive back side of silicon chip fulcrum print, edge occur
Around plating, cell piece outward appearance and conversion efficiency are had a strong impact on.
Utility model content
The utility model provides plated film equipment integrating above and below a kind of board-like PECVD for problem present in background technology
Graphite carrying plate structure, the graphite carrying plate have multiple graphite frame units, and each graphite frame unit is in inverted positive truncated rectangular pyramids knot
Structure, the upper bottom edge of positive truncated rectangular pyramids is graphite frame, and four sides of positive truncated rectangular pyramids are graphite cake, and the upper bottom of positive truncated rectangular pyramids is under
The hollow formation cavity in bottom；For the length of side of silicon chip between upper bottom edge and the length of side of bottom, silicon chip is placed in the side of positive truncated rectangular pyramids
On face.
Preferably, the upper bottom edge length of side is 159m；The bottom length of side is 156mm.
Preferably, the chamfering of the upper bottom edge is Φ 214.5mm, and the chamfering of the bottom is Φ 208.5mm.
Preferably, the quantity of the graphite frame unit is 24, arranges and arranges in four rows six.
The beneficial effects of the utility model
During producing solar panel, silicon chip is integrally set by the upper and lower plated film containing PECVD of the present utility model
After standby, due to silicon chip be brought into close contact with graphite side it is seamless, therefore obtained cell piece front without white edge, without fulcrum print, the back side
Without around plating, the positive back side color uniformity of cell piece.
Brief description of the drawings
Fig. 1 is installation whole structure figure of the present utility model.
Fig. 2 is graphite frame cellular construction figure of the present utility model.
Fig. 3 is that silicon chip of the present utility model places schematic diagram.
Embodiment
With reference to embodiment, the utility model is described in further detail, but the scope of protection of the utility model is not limited to
This：
With reference to Fig. 1 and Fig. 2, embodiment 1：A kind of graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings, it is described
Graphite carrying plate has multiple graphite frame units, and each graphite frame unit is in inverted positive truncated rectangular pyramids structure, the upper bottom of positive truncated rectangular pyramids
Side 1 is graphite frame, and four sides 2 of positive truncated rectangular pyramids are graphite cake, the upper bottom of positive truncated rectangular pyramids to hollow formation cavity of going to the bottom
4；The length of side of silicon chip 5 is between the length of side of upper bottom edge 1 and bottom 3.With reference to Fig. 3, silicon chip 5 is placed in the side of positive truncated rectangular pyramids
On 2.Side 2 in embodiment can be formed by polishing or cutting graphite cake.
Embodiment 2：The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings as described in Example 1, for outer
The silicon chip 5 that shape is 156.75x156.75mm, chamfering is Φ 210mm.The length of side of upper bottom edge 1 of the graphite frame unit is 159m；Institute
It is 156mm to state the length of side of bottom 3.
Embodiment 3：The graphite carrying plate structure of board-like PECVD as described in Example 2 plated film equipment integratings up and down, it is described on
The chamfering on base 1 is Φ 214.5mm, and the chamfering of the bottom 3 is Φ 208.5mm.
Preferably, the quantity of the graphite frame unit is 24, arranges and arranges in four rows six.
The graphite carrying plate of the utility model design makes silicon chip 5 realize the linear contact lay with positive truncated rectangular pyramids side 2 by its edge
It is fixed, gapless between silicon chip 5 and graphite cake, it on the one hand can avoid producing around plating phenomenon, on the other hand, the design is without hook branch
Support, obtained cell piece front is avoided to produce fulcrum print, the positive back side color uniformity of cell piece；Meanwhile using the design stone
Black support plate, compatible various sizes of silicon chip 5 (quantity that silicon chip 5 can be carried inside graphite carrying plate shown in Fig. 1 is 4x6 totally 24,
Support plate internal structure slide glass number can also be made an amendment, such as make 6x6 or 5x7 ... into according to the size of equipment cavity)；And should
Design plated film and lower filming equipment on compatible board-like PECVD, while be applied to all upper and lower plated film PECVD all-in-ones simultaneously.
Specific embodiment described herein is only the utility model spirit to be done for example, the chi of slide glass unit
Very little, shape can be designed according to the die size and chamfer shape of use.The utility model those of skill in the art
Member can be made various modifications or supplement to described specific embodiment or be substituted using similar mode, but can't
Deviate spirit of the present utility model or surmount scope defined in appended claims.
Claims (4)
1. the graphite carrying plate structure of plated film equipment integrating, the graphite carrying plate have multiple graphite frames above and below a kind of board-like PECVD
Unit, it is characterised in that for each graphite frame unit in inverted positive truncated rectangular pyramids structure, the upper bottom edge (1) of positive truncated rectangular pyramids is graphite side
Frame, four sides (2) of positive truncated rectangular pyramids are graphite cake, the upper bottom of positive truncated rectangular pyramids to hollow formation cavity (4) of going to the bottom；Silicon chip
(5) between the length of side of upper bottom edge (1) and bottom (3), silicon chip (5) is placed on the side (2) of positive truncated rectangular pyramids the length of side.
2. the graphite carrying plate structure of plated film equipment integrating above and below board-like PECVD according to claim 1, it is characterised in that institute
It is 159m to state upper bottom edge (1) length of side；Bottom (3) length of side is 156mm.
3. the graphite carrying plate structure of plated film equipment integrating above and below board-like PECVD according to claim 2, it is characterised in that institute
The chamfering for stating upper bottom edge (1) is Φ 214.5mm, and the chamfering of the bottom (3) is Φ 208.5mm.
4. the graphite carrying plate structure of plated film equipment integrating above and below board-like PECVD according to claim 1, it is characterised in that institute
The quantity for stating graphite frame unit is 24, arranges and arranges in four rows six.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720514909.8U CN206814841U (en) | 2017-05-10 | 2017-05-10 | The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720514909.8U CN206814841U (en) | 2017-05-10 | 2017-05-10 | The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings |
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| CN206814841U true CN206814841U (en) | 2017-12-29 |
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| CN201720514909.8U Active CN206814841U (en) | 2017-05-10 | 2017-05-10 | The graphite carrying plate structure of above and below board-like PECVD plated film equipment integratings |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109020627A (en) * | 2018-08-06 | 2018-12-18 | 珠海汉瓷精密科技有限公司 | A kind of tool fixture suitable for the two-sided continuous metallised of potsherd |
| CN111690911A (en) * | 2020-06-30 | 2020-09-22 | 成都晔凡科技有限公司 | Bearing device |
-
2017
- 2017-05-10 CN CN201720514909.8U patent/CN206814841U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109020627A (en) * | 2018-08-06 | 2018-12-18 | 珠海汉瓷精密科技有限公司 | A kind of tool fixture suitable for the two-sided continuous metallised of potsherd |
| CN111690911A (en) * | 2020-06-30 | 2020-09-22 | 成都晔凡科技有限公司 | Bearing device |
| CN111690911B (en) * | 2020-06-30 | 2023-07-25 | 通威太阳能(金堂)有限公司 | Bearing device |
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Address after: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee after: Huansheng photovoltaic (Jiangsu) Co., Ltd Address before: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee before: Eastern link photovoltaic (Jiangsu) Co., Ltd. |