CN210668401U - Silicon-based laminated double-sided solar cell - Google Patents
Silicon-based laminated double-sided solar cell Download PDFInfo
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- CN210668401U CN210668401U CN201922383756.XU CN201922383756U CN210668401U CN 210668401 U CN210668401 U CN 210668401U CN 201922383756 U CN201922383756 U CN 201922383756U CN 210668401 U CN210668401 U CN 210668401U
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Abstract
The utility model relates to a silicon-based laminated double-sided solar cell, which comprises a top cell and a bottom cell; the top cell is an amorphous silicon heterojunction solar cell; the bottom cell is a P-type solar cell; a passivation film is arranged on the back surface of the bottom battery; the back of the bottom battery is provided with a lower electrode; the contact region of the bottom cell and the lower electrode has P formed by selective region doping+A heavily doped region; the top battery and the bottom battery are connected in series through a tunnel. The utility model disclosesThe tandem type laminated double-sided solar structure is designed based on a silicon-based solar cell with high industrialization degree as a bottom cell, and has the characteristics of wide raw material source, simple process steps, low manufacturing cost and the like. The top battery adopts an amorphous silicon thin film battery, the forbidden band width is continuously adjustable, the light absorption coefficient is high, the window width of the matching degree with the P-type bottom battery is wide, the amorphous silicon thin film can be deposited in a large scale and a large area, and the process is simple and mature.
Description
Technical Field
The utility model relates to a solar cell field, concretely relates to two-sided solar cell of silica-based stromatolite.
Background
At present, a silicon-based solar cell is a mainstream product in the photovoltaic industry, and with the continuous development and innovation of the solar cell technology, the conversion efficiency of a silicon-based single solar cell is close to the theoretical limit of Shockley-Queisser photovoltaic conversion efficiency; in order to meet the development trend of continuously reducing cost and improving efficiency in the photovoltaic industry and realize the goal of low-price internet access in the early days, a solar cell with a novel structure needs to be developed and designed. Wherein the laminated solar cell can not be limited by theoretical limit of Shockley-Queisser conversion efficiency. The laminated solar cell consists of two solar cells which are divided into a top cell and a bottom cell; the top and bottom cells have two materials with different forbidden band widths, which can absorb the sunlight of different wave bands, greatly improving the light utilization rate, and the conversion efficiency can reach 45 percent at most. The types and the structures of the laminated solar cells can be designed to be various, various laminated solar cells can be designed through gallium arsenide and CIGS thin film substrates, but the characteristics of complex process steps, immature and unstable technology, small process window, high manufacturing cost and the like exist, and industrialization is difficult to realize. Therefore, a stacked solar cell which is applicable to industrialization, simple in process and low in manufacturing cost is particularly needed to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a two-sided solar cell of silica-based stromatolite to prior art not enough.
The utility model discloses the technical scheme who adopts as follows:
a silicon-based laminated double-sided solar cell comprises a top cell and a bottom cell; the top cell is an amorphous silicon heterojunction solar cell; the bottom cell is a P-type solar cell; a passivation film is arranged on the back surface of the bottom battery; the back of the bottom battery is provided with a lower electrode; the contact region of the bottom cell and the lower electrode has P formed by selective region doping+A heavily doped region; the top battery and theThe bottom batteries are connected in series through the tunnel.
The further technical scheme is as follows: the bottom cell comprises a P-type silicon substrate; n is prepared on the front surface of the P-type silicon substrate+Doping layer; the P-type silicon substrate and the N+Forming a pn junction by the doped layer; preparing an aluminum oxide film on the back of the P-type silicon substrate; and preparing a silicon oxynitride film on the back of the aluminum oxide film.
The further technical scheme is as follows: the thickness of the aluminum oxide film is 5-20 nm; the thickness of the silicon oxynitride film is 75-85 nm.
The further technical scheme is as follows: an electrode groove is formed on the back surface of the P-type silicon substrate, and P is formed on the P-type silicon substrate through selective area doping at the electrode groove+A heavily doped region; printing the lower electrode in the electrode groove, wherein the lower electrode and the P+The heavily doped regions are in contact.
The further technical scheme is as follows: the top cell comprises N stacked on the front surface of the bottom cell in sequence++Microcrystalline silicon thin film layer, P+The microcrystalline silicon thin film layer, the intrinsic microcrystalline silicon thin film layer and the N-type microcrystalline silicon thin film layer.
The further technical scheme is as follows: n is a radical of++The thickness of the microcrystalline silicon thin film layer is 20-50 nm.
The further technical scheme is as follows: the P is+The thickness of the microcrystalline silicon thin film layer is 30-50 nm.
The further technical scheme is as follows: the thickness of the intrinsic microcrystalline silicon thin film layer is 300-500 nm.
The further technical scheme is as follows: the thickness of the N-type microcrystalline silicon thin film layer is 50-70 nm.
The further technical scheme is as follows: preparing a transparent conductive film on the front surface of the N-type microcrystalline silicon film layer; and an upper electrode is prepared on the transparent conductive film.
The utility model has the advantages as follows:
the utility model discloses a two-sided solar cell of silica-based serial-type stromatolite:
1) the tandem type laminated double-sided solar structure design is based on a silicon-based solar cell with high industrialization degree as a bottom cell, and has the characteristics of wide raw material source, simple process steps, low manufacturing cost and the like; the top battery adopts an amorphous silicon film battery, the forbidden band width is continuously adjustable, the light absorption coefficient is high, the window of the matching degree with the P-type bottom battery is wide, the amorphous silicon film can be deposited in a large scale and a large area, the process is simple and mature, the film forming area is matched with the size of the crystalline silicon, and the integration degree of the amorphous silicon film and the crystalline silicon is high; and the amorphous silicon thin film battery is manufactured under the low temperature condition (less than 300 ℃) in the whole manufacturing process, so that the bottom battery is not damaged, and the quality of the bottom battery is ensured. The silicon-based laminated solar cell is connected in series, an intermediate electrode does not need to be additionally manufactured, the process steps are simple, the integration level is high, and later-stage component packaging is facilitated.
2) The bottom cell is formed by combining the P-type crystalline silicon cell with the back passivation and back selective doping technology, the P-type crystalline silicon cell has the advantages of mature process technology, high commercialization degree and the like, and the back passivation and back selective doping technology can provide good back surface passivation and secondary reflection, so that more photon-generated carriers are generated, metal contact composite current is reduced, and open-circuit voltage and short-circuit current of the cell are improved.
3) The structural design of the double-sided light receiving surface can enable the upper surface and the lower surface of the tandem type laminated sun to absorb sunlight to generate electricity; the sunlight utilization rate is improved, so that the photoelectric conversion efficiency of the whole solar cell is improved, and the short-circuit current of the whole solar cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based laminated bifacial solar cell.
Fig. 2 is an equivalent circuit diagram of a silicon-based laminated double-sided solar cell.
In the figure: 1. a lower electrode; 2. a silicon oxynitride film; 3. an aluminum oxide film; 4. p+A heavily doped region; 5. a P-type silicon substrate; 6. n is a radical of+Doping layer; 7. n is a radical of++A microcrystalline silicon thin film layer; 8. p+A microcrystalline silicon thin film layer; 9. an intrinsic microcrystalline silicon thin film layer; 10. an N-type microcrystalline silicon thin film layer; 11. a transparent conductive film; 12. an upper electrode; 13. a top battery; 14. a bottom cell.
Detailed Description
Fig. 1 is a schematic structural diagram of the present invention. As shown in fig. 1, the silicon-based laminated bifacial solar cell includes a top cell 13 and a bottom cell 14. The top cell 13 is an amorphous silicon heterojunction solar cell. The bottom cell 14 is a P-type solar cell. The bottom cell 14 has a passivation film on its back side. The bottom cell 14 is prepared with a lower electrode 1 on the back side. The contact area of the bottom cell 14 with the lower electrode 1 has P formed by selective area doping+A heavily doped region 4. The bottom cell 14 is formed by a P-type solar cell in combination with backside passivation and backside selective contact techniques. The top battery 13 and the bottom battery 14 are firmly connected in series through a tunnel.
Specifically, the bottom cell 14 includes a P-type silicon substrate 5. The surface of the P-type silicon substrate 5 has a pyramid-shaped surface morphology formed by etching. N is prepared on the front surface of a P-type silicon substrate 5+And (3) doping the layer 6. P-type silicon substrate 5 and N+The doped layer 6 forms a pn junction. An alumina film 3 is prepared on the back of a P-type silicon substrate 5. A silicon oxynitride film 2 is prepared on the back of the alumina film 3. The alumina film 3 can also be written as AlOxFilm, silicon oxynitride film 2, may also be written as SiONx. The aluminum oxide film 3 and the silicon oxynitride film 2 form a backside passivation stack of a P-type silicon substrate 5. Preferably, the thickness of the alumina thin film 3 is 5 to 20 nm. The thickness of the silicon oxynitride film 2 is 75-85 nm.
An electrode groove is formed in the electrode area on the back surface of the P-type silicon substrate 5, and P is formed on the P-type silicon substrate 5 through selective area doping at the electrode groove+A heavily doped region 4. Printing a lower electrode 1 in the electrode groove, wherein the lower electrode 1 and the P+The heavily doped regions 4 are in contact.
The top cell 13 includes N stacked in sequence on the front side of the bottom cell 14++Microcrystalline silicon thin film layer 7, P+A microcrystalline silicon thin film layer 8, an intrinsic microcrystalline silicon thin film layer 9 and an N-type microcrystalline silicon thin film layer 10. P+Microcrystalline silicon thin film layers 8 and N++The microcrystalline silicon thin film layer 7 forms a tunnel junction, and the top cell 13 and the bottom cell 14 are connected in series with each other.
Preferably, N++The thickness of the microcrystalline silicon thin film layer 7 is 20-50 nm. P+The thickness of the microcrystalline silicon thin film layer 8 is 30-50 nAnd m is selected. The thickness of the intrinsic microcrystalline silicon thin film layer 9 is 300-500 nm. The thickness of the N-type microcrystalline silicon thin film layer 10 is 50-70 nm.
A transparent conductive film 11 is prepared on the front surface of the N-type microcrystalline silicon film layer 10. An upper electrode 12 is prepared on the transparent conductive film 11.
Fig. 2 is an equivalent circuit diagram of the present invention. As shown in fig. 2, the resistor Rs and the resistor R are respectively a series resistor and an external load of the whole tandem cell, and the two diodes are respectively: in the top-bottom battery unijunction diode model, the resistor Rsh1 is the parallel resistor of the top battery 13, the resistor Rsh2 is the parallel resistor of the bottom battery 14, and the resistor Rt is the equivalent resistor of the tunnel junction. As shown in fig. 2, the top cell 13 and the bottom cell 14 are connected in series by a tunnel junction.
The utility model discloses a preparation method of two-sided solar cell of silica-based stromatolite does:
the method comprises the following steps: the surface cleaning texture is achieved, the P-type silicon substrate 5 is cleaned by using low-concentration alkali solution, and then the pyramid-shaped surface morphology is formed on the surface of the P-type silicon substrate 5 through corrosion by using the anisotropic corrosion characteristic of the reaction alkali solution. The weight percentage concentration of the reaction alkali solution is 1.0-1.5 wt% of NaOH, the reaction time is 200-400 s, the temperature is 70-90 ℃, and the reflectivity is 11-12%.
Step two: high temperature phosphorus diffusion. By N2Diffusing source POCl3Introducing steam into the high-temperature diffusion furnace, introducing sufficient oxygen, performing a series of chemical reactions, and diffusing phosphorus atoms into the P-type silicon substrate 5 to form N+Doping layer 6, and N+The doped layer 6 and the P-type silicon substrate 5 form a PN junction. N is a radical of2The flow rate is 500-800 sccm; o is2The flow rate is 600-1000 sccm; the reaction time is 80-100 min; the temperature is 700-800 ℃; the diffusion sheet resistance is 80-130 omega;
step three: peripheral etching and back polishing. Using HNO3And etching the back surface and the edge of the P-type silicon substrate 5 by using HF mixed acid liquid, removing N-type silicon on the edge to insulate the front surface and the back surface of the P-type silicon substrate 5 from each other, and polishing the back surface of the P-type silicon substrate 5, wherein the reflectivity of the back surface is 30-35%.
Step four: an alumina film 3 is prepared. The alumina thin film 3 may be prepared by a plasma vapor deposition method (PECVD) or an atomic layer deposition method (ALD). The thickness of the alumina film 3 is preferably 5-20 nm, and the refractive index is 1.65.
Step five: and preparing the silicon oxynitride film 2. Depositing a layer of silicon oxynitride film 2 on the back of the alumina film 3 by using a plasma vapor deposition method, wherein the deposition temperature is 500-550 ℃; n is a radical of2The O flow is 500-1200 sccm; the pressure is 1500-2000 pa; the deposition time is 350-600 s. The thickness of the silicon oxynitride film 2 is preferably 75-85 nm, and the refractive index is as follows: 2.05 to 2.10.
Step six: and (4) screen printing a boron paste pattern on the back surface, and drying. The thickness of the boron slurry is 2-5 um, and the drying temperature is 150-250 ℃.
Step seven: laser grooving and doping, wherein the electrode area printed with boron paste on the back of the P-type silicon substrate 5 is simultaneously doped and holed through the selective area by adopting the laser technology to form P+Heavily doped region 4, P+The sheet resistance of the heavily doped region 4 is 10-15 omega;
step eight: preparing a lower electrode, and printing an aluminum grid line on an electrode groove by adopting a screen printing mode to form a lower electrode 1 of a bottom battery;
step nine: preparation of N Using plasma vapor deposition (PECVD)++A microcrystalline silicon thin film layer 7 with a reaction gas of PH3、SiH4、H2The deposition temperature of the gas is 200-250 ℃, the ratio (hydrogen dilution ratio) of H2/SiH4 is R, R is 20-35, and the thickness of the film layer is 20-50 nm;
step ten: using Plasma Enhanced Chemical Vapor Deposition (PECVD) on N++Preparing P on the upper surface of the microcrystalline silicon thin film layer 7+A microcrystalline silicon thin film layer 8, the reaction gas is B (CH)3)3、SiH4、H2The deposition temperature is 160-260 ℃, the ratio of H2/SiH4 (hydrogen dilution ratio) is R, R is 20-35, P is+The microcrystalline silicon thin film layer has a thickness of 8 nm to 30-50 nm
Step eleven: depositing an intrinsic microcrystalline silicon thin film layer 9 with SiH as a reaction gas4And H2The ratio of H2/SiH4 (hydrogen dilution ratio) is R, R is 15-20, the deposition temperature is 180-200 ℃, the intrinsic microcrystalline silicon thin filmThe thickness of the layer 9 is 300-500 nm;
step twelve: preparing an N-type microcrystalline silicon thin film layer 10 by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, wherein the reaction gases are PH3, SiH4 and H2, the deposition temperature is 200-250 ℃, R is 20-35, and the thickness of the N-type microcrystalline silicon thin film layer 10 is 50-70 nm;
step thirteen: depositing a transparent conductive film 11 (TCO);
step thirteen: and finally, preparing the upper electrode 12 to finish the whole solar cell preparation.
The utility model discloses combine the passivation of back and back selectivity contact technique to form end battery 14 with P type solar cell to crystalline silicon solar cell is the basement project organization, uses amorphous silicon heterojunction solar cell to be top battery 13. The two silicon-based tandem solar cells are combined in a tandem mode, and specifically, the two silicon-based tandem double-sided solar cells are connected in series through a tunnel junction to form the silicon-based tandem solar cell. Because the amorphous silicon heterojunction solar cell has better light absorption at the short-wave end part and the crystalline silicon has better light absorption at the long-wave band, the light absorption can be increased to the maximum extent and the generated energy can be increased by combining the amorphous silicon heterojunction solar cell and the crystalline silicon.
In this context, according to the general notation in the field of semiconductors and solar cells, the + is used to denote the doping level, N+Representing heavily doped N-type semiconductor, N++Representing heavy doping of N-type semiconductor with doping concentration greater than N+. The doping of the P-type semiconductor can be analogized.
The above description is for the purpose of explanation and not limitation of the invention, which is defined in the claims, and any modifications may be made without departing from the basic structure of the invention.
Claims (10)
1. A silicon-based laminated double-sided solar cell is characterized in that: comprising a top cell (13) and a bottom cell (14); the top cell (13) is an amorphous silicon heterojunction solar cell; the bottom cell (14) is a P-type solar cell; a passivation film is arranged on the back surface of the bottom battery (14); the back of the bottom battery (14) is printed with a lower electrode (1); the bottom battery (14) andthe contact area of the lower electrode (1) has P formed by selective area doping+A heavily doped region (4); the top battery (13) and the bottom battery (14) are connected in series through a tunnel junction.
2. The silicon-based laminated bifacial solar cell of claim 1, wherein: the bottom cell (14) comprises a P-type silicon substrate (5); n is prepared on the front surface of the P-type silicon substrate (5)+A doped layer (6); the P-type silicon substrate (5) and the N+The doping layer (6) forms a pn junction; an aluminum oxide film (3) is prepared on the back of the P-type silicon substrate (5); and a silicon oxynitride film (2) is prepared on the back surface of the aluminum oxide film (3).
3. The silicon-based laminated bifacial solar cell of claim 2, wherein: the thickness of the aluminum oxide film (3) is 5-20 nm; the thickness of the silicon oxynitride film (2) is 75-85 nm.
4. The silicon-based laminated bifacial solar cell of claim 2, wherein: an electrode groove is formed on the back surface of the P-type silicon substrate (5), and P is formed on the P-type silicon substrate (5) through selective area doping at the electrode groove+A heavily doped region (4); printing the lower electrode (1) in the electrode groove, wherein the lower electrode (1) and the P are arranged+The heavily doped regions (4) are in contact.
5. The silicon-based laminated bifacial solar cell of claim 1, wherein: the top cell (13) comprises N sequentially stacked on the front surface of the bottom cell (14)++Microcrystalline silicon thin film layer (7), P+A microcrystalline silicon thin film layer (8), an intrinsic microcrystalline silicon thin film layer (9) and an N-type microcrystalline silicon thin film layer (10).
6. The silicon-based laminated bifacial solar cell of claim 5, wherein: n is a radical of++The thickness of the microcrystalline silicon thin film layer (7) is 20-50 nm.
7. According to the rightThe silicon-based laminated bifacial solar cell of claim 5, wherein: the P is+The thickness of the microcrystalline silicon thin film layer (8) is 30-50 nm.
8. The silicon-based laminated bifacial solar cell of claim 5, wherein: the thickness of the intrinsic microcrystalline silicon thin film layer (9) is 300-500 nm.
9. The silicon-based laminated bifacial solar cell of claim 5, wherein: the thickness of the N-type microcrystalline silicon thin film layer (10) is 50-70 nm.
10. The silicon-based laminated bifacial solar cell of claim 5, wherein: a transparent conductive film (11) is prepared on the front surface of the N-type microcrystalline silicon film layer (10); an upper electrode (12) is prepared on the transparent conductive film (11).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6982947B1 (en) * | 2020-12-29 | 2021-12-17 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, photovoltaic modules |
| CN114300564A (en) * | 2021-12-28 | 2022-04-08 | 武汉锐科光纤激光技术股份有限公司 | Double-sided solar cell and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6982947B1 (en) * | 2020-12-29 | 2021-12-17 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Solar cells and their manufacturing methods, photovoltaic modules |
| JP2022104780A (en) * | 2020-12-29 | 2022-07-11 | ジョジアン ジンコ ソーラー カンパニー リミテッド | Photovoltaic cell, method for manufacturing the same, and photovoltaic module |
| US11437529B2 (en) | 2020-12-29 | 2022-09-06 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell, method for manufacturing same, and photovoltaic module |
| US11600731B2 (en) | 2020-12-29 | 2023-03-07 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell, method for manufacturing same, and photovoltaic module |
| CN114300564A (en) * | 2021-12-28 | 2022-04-08 | 武汉锐科光纤激光技术股份有限公司 | Double-sided solar cell and manufacturing method thereof |
| CN114300564B (en) * | 2021-12-28 | 2024-04-05 | 武汉锐科光纤激光技术股份有限公司 | Double-sided solar cell and manufacturing method thereof |
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Effective date of registration: 20200923 Address after: 231400 North 3rd road, Tongcheng Economic Development Zone, Anqing City, Anhui Province Patentee after: China building materials Junxin (Tongcheng) Technology Co., Ltd Address before: Shen Gang Town Cheng Road Jiangyin city Jiangsu Province, Wuxi City, No. 1011, 214400 Patentee before: JETION SOLAR (JIANGSU) Co.,Ltd. |
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