CN208637379U - Compact graphite carrying plate structure suitable for six face shape silicon wafers - Google Patents
Compact graphite carrying plate structure suitable for six face shape silicon wafers Download PDFInfo
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- CN208637379U CN208637379U CN201820352877.0U CN201820352877U CN208637379U CN 208637379 U CN208637379 U CN 208637379U CN 201820352877 U CN201820352877 U CN 201820352877U CN 208637379 U CN208637379 U CN 208637379U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of compact graphite carrying plate structures suitable for six face shape silicon wafers, the graphite carrying plate has multiple graphite frame units, it is characterized in that each graphite frame unit is in inverted positive six terrace with edges structure, the upper bottom edge (1) of positive six terrace with edge is graphite frame, six sides (2) of positive truncated rectangular pyramids are graphite plate, the upper bottom of positive six terrace with edge to hollow formation cavity (4) of going to the bottom；Between upper bottom edge (1) and the side length of bottom (3), silicon wafer (5) is placed on the side (2) of positive six terrace with edge the side length of silicon wafer (5)；Each graphite frame unit is in compact arrangement: the adjacent side of adjoining graphite unit is parallel and is equidistant.During producing solar panel, by silicon wafer after the upper and lower plated film integrated equipment of the PECVD containing the utility model, since silicon wafer fits closely with graphite side seamless, therefore cell piece front obtained is printed without white edge, without fulcrum, the back side is without around plating, the positive back side color uniformity of cell piece.
Description
Technical field
The utility model belongs to the technical field of solar panel production equipment, more particularly, to hexagon solar-electricity
The production equipment of pond plate, specifically a kind of compact graphite carrying plate structure for being suitable for six face shape silicon wafers.
Background technique
In order to improve the transformation efficiency of cell piece, increases back passivation technology at the conventional batteries back side, be more mature at present
Technology.PERC cell backside generally overleaf grows AlOx/SiNx stack membrane using board-like PECVD device,
After passivating film is completed at the back side, enters next process and carry out front SiNx deposition.Since positive back side film is set in different respectively
On the one hand standby upper completion increases automation and artificial investment, battery manufacturing cost is caused to rise；On the other hand, it is passed in silicon wafer
During defeated, the probability for introducing pollution and processing procedure exception increases, and yield is caused to decline.Currently, existing device manufactory produces
Positive back side coating film all-in-one machine, equipment body structure are divided into three chambers, and wherein PM1 and PM2 uses upper plated film mode, in silicon chip back side
AlOx/SiNx stack membrane is deposited respectively；PM3 uses lower plated film mode, grows layer of sin x film in front side of silicon wafer.Silicon wafer exists
In coating process, due to being placed on graphite carrying plate, there is the contact of certain area with support plate, the positive back side of silicon wafer is caused fulcrum occur
Print, edge seriously affect cell piece appearance and transfer efficiency around plating.
Applicant knows that office has applied application No. is 201720514909.8 to state in 2017-5-10, on entitled board-like PECVD
The utility model patent of the graphite carrying plate structure of lower plated film integrated equipment, and authorized in 2017-12-29, notification number
CN206814841U.To solve the above problems.
With the popularization and application of six face shape solar panels, the graphite carrying plate structure of original rectangular cell plate is unable to simple replacement
Using: special graphite carrying board structure parameter (the distinctive unit arrangement mode of six face shapes of six face shape solar panels；Incline each unit side
Angle；The depth of the surrounded cavity in side；Upper bottom edge/bottom chamfering) it is required to redesign, edge is reduced around plating to meet
Requirement.
Utility model content
Application artificially solves the problems, such as newly exist in background technique, proposes a kind of compact stone suitable for six face shape silicon wafers
Black carrying board structure, the graphite carrying plate have multiple graphite frame units, and each graphite frame unit is in inverted positive six terrace with edges structure,
The upper bottom edge (1) of positive six terrace with edge is graphite frame, and six sides (2) of positive truncated rectangular pyramids are graphite plate, the upper bottom of positive six terrace with edge
To hollow formation cavity (4) of going to the bottom；The side length of silicon wafer (5) is between upper bottom edge (1) and the side length of bottom (3), silicon wafer (5)
It is placed on the side (2) of positive six terrace with edge；Each graphite frame unit is in compact arrangement: the adjacent side of adjoining graphite unit is parallel
And it is equidistant.
Specifically, upper bottom edge (1) side length is 92mm；Bottom (3) side length is 91mm；The inclination angle of side (2)
It is 80 °.
Specifically, the chamfering of the upper bottom edge (1) is Φ 184mm, the chamfering of the bottom (3) is Φ 192mm.
Specifically, the quantity of the graphite frame unit is 25, it is staggered, the adjacent side distance of adjoining graphite unit is
10mm。
The beneficial effects of the utility model
During producing solar panel, silicon wafer is integrally set by the upper and lower plated film of PECVD containing the utility model
After standby, due to silicon wafer fit closely with graphite side it is seamless, therefore cell piece front obtained without white edge, without fulcrum print, the back side
Without around plating, the positive back side color uniformity of cell piece.
Compact, the stone required for the graphite frame unit with quantity of graphite frame unit arrangement in the graphite carrying plate of the utility model
Black support plate size is less than graphite carrying plate size required for other arrangement modes, saves material and facility space.
Detailed description of the invention
Fig. 1 is the installation overall effect figure of the utility model.
Fig. 2 is the graphite frame cellular construction figure of the utility model.
Fig. 3 is that the silicon wafer of the utility model places schematic diagram.
Specific embodiment
Below with reference to embodiment, the utility model is described in further detail, but the protection scope of the utility model is not limited to
This:
Embodiment 1 combined with Figure 1 and Figure 2: a kind of compact graphite carrying plate structure suitable for six face shape silicon wafers, the stone
Black support plate has multiple graphite frame units, and each graphite frame unit is in inverted positive six terrace with edges structure, the upper bottom edge 1 of positive six terrace with edge
Six sides 2 for graphite frame, positive truncated rectangular pyramids are graphite plate, the upper bottom of positive six terrace with edge to hollow formation cavity 4 of going to the bottom；Silicon
The side length of piece 5 is between upper bottom edge 1 and the side length of bottom 3, and in conjunction with attached drawing 3, silicon wafer 5 is placed in the side 2 of positive six terrace with edge
On；Each graphite frame unit is in compact arrangement: the adjacent side of adjoining graphite unit is parallel and is equidistant.Silicon wafer 5 is placed in
On the side 2 of positive six terrace with edge.Side 2 in embodiment can be formed by polishing or cutting graphite plate.
Compact, the stone required for the graphite frame unit with quantity of graphite frame unit arrangement in the graphite carrying plate of the utility model
Black support plate size is less than other arrangement modes.
Embodiment 2: graphite carrying plate structure as described in Example 1, is 90.5mm for side length, chamfering is Φ 181mm
Hexagon silicon wafer 5,1 side length of upper bottom edge are 92m；3 side length of bottom is 91mm；The inclination angle of side 2 is 80 °.
Embodiment 3: the chamfering of graphite carrying plate structure as described in Example 1, the upper bottom edge 1 is Φ 184mm, under described
The chamfering on bottom edge 3 is Φ 182mm.
Embodiment 4: graphite carrying plate structure as described in Example 1, the quantity of the graphite frame unit are 25, staggered row
The adjacent side distance of column, adjoining graphite unit is 10mm.
Unlike first to file in background technique, for the side of positive truncated rectangular pyramids, the chamfering of upper bottom edge 1 is Φ
214.5mm, the chamfering of the bottom 3 are Φ 208.5mm, and 1 side length of upper bottom edge is 159m；3 side length of bottom is 156mm
When be it is best, the positive back side color uniformity of cell piece obtained and printed without fulcrum.But the structure can not be straight in the actual process
It scoops out in positive six terrace with edge for the application, therefore applicant further explores on this basis, improves, and obtains above-described embodiment 2-
5 preferred plan.
The graphite carrying plate of the utility model design contacts silicon wafer 5 with the line of positive six terrace with edge side 2 by the realization of its edge
Fixed, on the one hand gapless between silicon wafer 5 and graphite plate can avoid generating around plating phenomenon, on the other hand, the design is without hook branch
Support avoids cell piece front obtained from generating fulcrum print, the positive back side color uniformity of cell piece.
It is identical with earlier application to be, the graphite frame unit for forming cavity 4 is surrounded by side 2 since the design is used
Structure, the hexagon silicon wafer 5 of compatible difference size dimension: size of the side length of silicon wafer 5 between upper bottom edge 1 and bottom 3
It is applicable in.
Specific embodiment described herein is only to illustrate to the spirit of the present invention.The utility model institute
Belonging to those skilled in the art can make various modifications or additions to the described embodiments or using similar
Mode substitute, but without departing from the spirit of the present application or beyond the scope of the appended claims.
Claims (3)
1. a kind of compact graphite carrying plate structure suitable for six face shape silicon wafers, the graphite carrying plate has multiple graphite frame lists
Member, it is characterised in that each graphite frame unit is in inverted positive six terrace with edges structure, and the upper bottom edge (1) of positive six terrace with edge is graphite side
Six sides (2) of frame, positive truncated rectangular pyramids are graphite plate, the upper bottom of positive six terrace with edge to hollow formation cavity (4) of going to the bottom；Silicon wafer
(5) between upper bottom edge (1) and the side length of bottom (3), silicon wafer (5) is placed on the side (2) of positive six terrace with edge side length；
Each graphite frame unit is in compact arrangement: the adjacent side of adjoining graphite unit is parallel and is equidistant；Upper bottom edge (1) side
A length of 92mm；Bottom (3) side length is 91mm；The inclination angle of side (2) is 80 °.
2. graphite carrying plate structure according to claim 1, it is characterised in that the chamfering of the upper bottom edge (1) is Φ 184mm,
The chamfering of the bottom (3) is Φ 192mm.
3. graphite carrying plate structure according to claim 1, it is characterised in that the quantity of the graphite frame unit is 25, is handed over
The adjacent side distance of mistake arrangement, adjoining graphite unit is 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820352877.0U CN208637379U (en) | 2018-03-15 | 2018-03-15 | Compact graphite carrying plate structure suitable for six face shape silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820352877.0U CN208637379U (en) | 2018-03-15 | 2018-03-15 | Compact graphite carrying plate structure suitable for six face shape silicon wafers |
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| Publication Number | Publication Date |
|---|---|
| CN208637379U true CN208637379U (en) | 2019-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820352877.0U Active CN208637379U (en) | 2018-03-15 | 2018-03-15 | Compact graphite carrying plate structure suitable for six face shape silicon wafers |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471981A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Anti-winding graphite-plating baffle plate suitable for graphite support plates of different large-size specifications |
-
2018
- 2018-03-15 CN CN201820352877.0U patent/CN208637379U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111471981A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Anti-winding graphite-plating baffle plate suitable for graphite support plates of different large-size specifications |
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| CP01 | Change in the name or title of a patent holder |
Address after: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee after: Huansheng photovoltaic (Jiangsu) Co., Ltd Address before: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee before: Eastern link photovoltaic (Jiangsu) Co., Ltd. |