CN210156387U

CN210156387U - Large-size solar cell

Info

Publication number: CN210156387U
Application number: CN201921285131.3U
Authority: CN
Inventors: 张彩霞; 吴仕梁; 路忠林; 张凤鸣
Original assignee: Jiangsu Sunport Power Corp Ltd
Current assignee: Jiangsu Sunport Power Corp Ltd
Priority date: 2019-08-09
Filing date: 2019-08-09
Publication date: 2020-03-17
Anticipated expiration: 2029-08-09

Abstract

The utility model discloses a large-size solar cell, including P type silica-based, the top of P type silica-based is provided with N type projecting pole, the top of N type projecting pole is connected with positive silicon nitride layer, the top surface of positive silicon nitride layer is provided with positive grid line layer, positive grid line layer includes positive thin grid line and positive main grid line, positive main grid line is provided with six, the utility model designs a large-size 6 main grid photovoltaic cell; compared with the conventional 5-main-grid photovoltaic cell, the cell manufactured by the utility model has large size, and the cost of a single tile is lower than that of the traditional 5BB and 4BB cells; the power of the photovoltaic cell of the utility model is improved compared with the power of the traditional 5BB cell; the battery manufacturing method of the utility model is simple, can be realized by only replacing the screen plate on the basis of the existing 5BB battery equipment, is easy to industrialize and has high yield; the utility model discloses a two-sided battery structure can realize two-sided photic, improves the system generated energy.

Description

Large-size solar cell

Technical Field

The utility model belongs to the technical field of solar cell, concretely relates to jumbo size solar cell.

Background

The solar cell module consists of a high-efficiency single crystal/polycrystalline solar cell, low-iron super white suede toughened glass, a packaging material, a functional back plate, interconnection bars, bus bars, a junction box and an aluminum alloy frame, the photovoltaic power generation of the solar cell is mature day by day at present, and the standard size of a 156mm silicon wafer is implemented in the industry for years. However, with the various reasons that market competition tends to be fierce, system terminals have requirements for power and the like, various enterprises make "articles" of silicon wafer size. Silicon wafers with different specifications of 156.75mm, 157.25mm, 157.4mm, 157.75mm, 158.75mm, 161.7mm, 166.7mm and the like are available on the market, and are mostly conventional 5-main-grid photovoltaic cells, so that the manufacturing cost is high and the cell efficiency is low.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a jumbo size solar cell to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme: a large-size solar cell comprises a P-type silicon substrate, wherein an N-type emitter is arranged on the top of the P-type silicon substrate, a front silicon nitride layer is connected to the top of the N-type emitter, a front grid line layer is arranged on the surface of the top of the front silicon nitride layer, the front grid line layer comprises front fine grid lines and front main grid lines, six front main grid lines are arranged, the six front main grid lines are distributed on the front silicon nitride layer at equal intervals, the front fine grid lines are horizontally distributed on the front silicon nitride layer at equal intervals, the front fine grid lines are perpendicular to the front main grid lines, a back passivation layer is arranged at the bottom of the P-type silicon substrate, a back grid line is arranged at the bottom of the back passivation layer, the back grid lines comprise back main grid lines and back fine grid lines, the back main grid lines are six, and the six back main grid, the back thin grid lines and the back main grid lines are vertically distributed on the back passivation layer.

Preferably, the distance between two adjacent front main grid lines and the distance between two adjacent back main grid lines are both 28-32mm, and the distance between the front main grid line and the back main grid line at two ends is 20-25mm from the edge of the cell.

Preferably, the front thin gate line adopts 120-140 thin gate lines, and the back thin gate line adopts 140-160 thin gate lines.

Preferably, the front thin gate line and the back thin gate line are parallel to each other, and the front main gate line and the back main gate line are parallel to each other.

Preferably, the shape of the P-type silicon substrate is a square structure, and the size of the P-type silicon substrate is suitable for any size among 166 × 166mm, 168 × 168mm or 200 × 200 mm.

Compared with the prior art, the beneficial effects of the utility model are that: the utility model designs a large-size 6 main grid photovoltaic cell; compared with the conventional 5-main-grid photovoltaic cell, the cell manufactured by the utility model has large size, and the cost of a single tile is lower than that of the traditional 5BB and 4BB cells;

the power of the photovoltaic cell of the utility model is improved compared with the power of the traditional 5BB cell;

the battery manufacturing method of the utility model is simple, can be realized by only replacing the screen plate on the basis of the existing 5BB battery equipment, is easy to industrialize and has high yield;

the utility model discloses a two-sided battery structure can realize two-sided photic, improves the system generated energy.

Drawings

FIG. 1 is a schematic sectional view of the present invention;

fig. 2 is a schematic top view of the present invention;

fig. 3 is a schematic bottom view of the present invention;

in the figure: 1. p-type silicon base; 2. an N-type emitter; 3. a front grid line layer; 4. a front side silicon nitride layer; 5. a back gate line; 6. a back passivation layer; 7. a front thin grid line; 8. a front side main gate line; 9. a back side main grid line; 10. and a back thin grid line.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-3, the present invention provides a technical solution: a large-size solar cell comprises a P-type silicon substrate 1, an N-type emitter 2 is arranged on the top of the P-type silicon substrate 1, a front silicon nitride layer 4 is connected on the top of the N-type emitter 2, a front grid line layer 3 is arranged on the top surface of the front silicon nitride layer 4, the front grid line layer 3 comprises front fine grid lines 7 and front main grid lines 8, six front main grid lines 8 are arranged, the six front main grid lines 8 are distributed on the front silicon nitride layer 4 at equal intervals, the front fine grid lines 7 are horizontally distributed on the front silicon nitride layer 4 at equal intervals, the front fine grid lines 7 are perpendicular to the front main grid lines 8, a back passivation layer 6 is arranged at the bottom of the P-type silicon substrate 1, a back grid line 5 is arranged at the bottom of the back passivation layer 6, the back grid line 5 comprises a back main grid line 9 and a back fine grid line 10, the back main grid lines 9 are six, the back fine grid lines 10 and the back main grid lines 9 are vertically distributed on the back passivation layer 6.

In this embodiment, preferably, the distance between two adjacent front main grid lines 8 and the distance between two adjacent back main grid lines 9 are both 28-32mm, and the distance between the front main grid line 8 and the back main grid line 9 at two ends and the edge of the battery piece is 20-25mm, so as to be uniformly distributed.

In this embodiment, preferably, the front thin gate line 7 adopts 140 thin gate lines, and the back thin gate line 10 adopts 140 thin gate lines, so as to improve the battery efficiency.

In this embodiment, preferably, the front thin gate line 7 and the back thin gate line 10 are parallel to each other, and the front main gate line 8 and the back main gate line 9 are parallel to each other, so as to facilitate transformation.

In this embodiment, it is preferable that the P-type si substrate 1 has a square structure, and the size of the P-type si substrate 1 is suitable for any size among 166 × 166mm, 168 × 168mm, 200 × 200mm, and the like, in order to reduce the cost per watt.

The utility model discloses a theory of operation and use flow: a P-type silicon substrate is adopted, a P-type silicon substrate 1 is cleaned to be suede, then an N emitting electrode 2 is formed through diffusion, a PN junction is formed between the P-type silicon substrate 1 and the P-type silicon substrate 1, then a front silicon nitride layer 4 is plated, a back passivation layer 6 is plated, then a back main grid line 9 and a back fine grid line 10 are printed, then a front main grid line 8 and a front fine grid line 7 are printed, meanwhile, the main grid line and the fine grid lines are guaranteed to be perpendicular to each other pairwise, the main grid line and the main grid line are parallel to each other, the fine grid line and the fine grid line.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A large size solar cell comprising a P-type silicon substrate (1), characterized in that: an N-type emitter (2) is arranged on the top of the P-type silicon substrate (1), a front silicon nitride layer (4) is connected to the top of the N-type emitter (2), a front grid line layer (3) is arranged on the top surface of the front silicon nitride layer (4), the front grid line layer (3) comprises front fine grid lines (7) and front main grid lines (8), six front main grid lines (8) are arranged, the six front main grid lines (8) are distributed on the front silicon nitride layer (4) at equal intervals, the front fine grid lines (7) are distributed on the front silicon nitride layer (4) horizontally at equal intervals, the front fine grid lines (7) are perpendicular to the front main grid lines (8), a back passivation layer (6) is arranged at the bottom of the P-type silicon substrate (1), a back grid line (5) is arranged at the bottom of the back passivation layer (6), and the back grid lines (5) comprise back main grid lines (9) and back fine grid lines (10, six back main grid lines (9) are arranged, the six back main grid lines (9) are vertically distributed on the back passivation layer (6) at equal intervals, and the back fine grid lines (10) and the back main grid lines (9) are vertically distributed on the back passivation layer (6).

2. A large size solar cell according to claim 1, wherein: the distance between two adjacent front main grid lines (8) and the distance between two adjacent back main grid lines (9) are both 28-32mm, and the distance between the front main grid lines (8) and the back main grid lines (9) at two ends is 20-25mm from the edge of the battery piece.

3. A large size solar cell according to claim 1, wherein: the front side thin grid lines (7) adopt 140 thin grid lines, and the back side thin grid lines (10) adopt 140 thin grid lines and 160 thin grid lines.

4. A large size solar cell according to claim 1, wherein: the front thin grid lines (7) and the back thin grid lines (10) are parallel to each other, and the front main grid lines (8) and the back main grid lines (9) are parallel to each other.

5. A large size solar cell according to claim 1, wherein: the shape of the P-type silicon substrate (1) is a square structure, and the size of the P-type silicon substrate (1) is suitable for 166mm, 168mm or 200mm and 200 mm.