CN202977494U

CN202977494U - Crystalline silicon/amorphous silicon double-face double battery

Info

Publication number: CN202977494U
Application number: CN201220507911XU
Authority: CN
Inventors: 高艳涛; 姜庆堂; 邢国强; 陶龙忠; 张斌; 何恬
Original assignee: Altusvia Energy Taicang Co Ltd
Current assignee: Altusvia Energy Taicang Co Ltd
Priority date: 2012-09-27
Filing date: 2012-09-27
Publication date: 2013-06-05
Anticipated expiration: 2022-09-27

Abstract

The utility model discloses a crystalline silicon/amorphous silicon double-face double battery. The battery sequentially comprises a battery anode, a transparent conductive electrode, an amorphous silicon P layer, an amorphous silicon intrinsic layer, a microcrystalline silicon N layer, a microcrystalline silicon P layer, an amorphous silicon I layer, an N type silicon substrate, an amorphous silicon I layer, an amorphous silicon N layer, a transparent conductive electrode and a battery cathode from top to bottom. The battery makes full use of the spectrum of the sun and has the advantage of double-face generation. The effective minority carrier lifetime of crystalline silicon can be prolonged to the maximum. The conversion efficiency of the battery is also increased. Film battery preparation technologies and equipments are adopted in the whole manufacturing process. The manufacturing cost is relatively low.

Description

A kind of crystalline silicon amorphous silicon binodal double-side cell

Technical field

The utility model belongs to the photovoltaic field, is specifically related to a kind of solar battery structure.

Background technology

At present, compare with external advanced battery technology of preparing, China's crystal silicon solar battery technology of preparing is still relatively backward, and basic procedure is by make solar cell with making herbs into wool, diffusion, etching, deposition antireflective film, method for printing screen on P type silicon chip.

Since 2010, the sale of solar cell piece is from the seller's market to the buyer's market, the government affairs subsidy is significantly cut down, make cell piece get manufacturer and make great efforts to reduce the production cost of oneself, and the efficient that improves cell piece is exactly effective approach, not only reduced the production cost of every watt, and sold to such an extent that market is larger; The research and development of high-efficiency battery at present concentrate on passivating back, thin grid printing, double-side cell etc., the preparation of these batteries and the preparation technology of conventional batteries are compatible and approaching, be all single battery, can not utilize fully the spectrum of solar cell, the raising of efficient is restricted.

The utility model content

The utility model purpose: be the deficiency that exists for prior art, provide a kind of crystalline silicon amorphous silicon binodal double-side cell.

Technical scheme: for achieving the above object, the utility model provides a kind of Jing Tigui amorphous silicon binodal battery, comprising: the negative pole of the Anode and battery of N-type silicon substrate, amorphous silicon I layer, microcrystal silicon P layer, amorphous silicon N layer, microcrystal silicon N layer, amorphous silicon intrinsic layer, amorphous silicon P layer, transparency conductive electrode, battery; Described battery is followed successively by from top to down: the negative pole of the positive pole of battery, transparency conductive electrode, amorphous silicon P layer, amorphous silicon intrinsic layer, microcrystal silicon N layer, microcrystal silicon P layer, amorphous silicon I layer, N-type silicon substrate, amorphous silicon I layer, amorphous silicon N layer, transparency conductive electrode, battery.

The utility model prepares amorphous silicon I layer in the front and rear surfaces of N type semiconductor, back of the body surface preparation amorphous silicon N layer, and front surface prepares microcrystal silicon P layer, forms the lower battery-hetero-junction solar cell that builds up battery; With the microcrystal silicon P of battery and the microcrystal silicon N of upper battery form good tunnelling joint at present; This upper battery that builds up battery is the amorphous silicon battery of NIP structure; And two-sided preparation transparent conductive electrode and silver electrode.

The manufacture method of a kind of Jing Tigui amorphous silicon binodal battery described in the utility model, concrete steps are as follows

(1) to n type single crystal silicon semiconductor substrate surface matte and carry out chemical cleaning;

The purpose of surface matte is to increase sunlight at the refraction number of times on surface, increases the light path of light in silicon substrate, improves the utilance of sunlight.The monocrystalline silicon semiconductor is carrying out surperficial matte at aqueous slkali (as sodium hydroxide solution and potassium hydroxide solution) usually, is the matte that forms by Pyramid.Matte provides internal reflection for front film PIN battery simultaneously, improves the current density of hull cell;

Chemical cleaning, chemical cleaning are generally carried out in watery hydrochloric acid and hydrofluoric acid, and purpose is to remove the impurity on surface, for the deposition intrinsic amorphous silicon of back provides preparation;

(2) at N-type silicon substrate two sides deposition of amorphous silicon I layer;

The Main Function of amorphous silicon I layer is the surface of passivation N-type crystalline silicon;

(3) deposition of amorphous silicon N layer;

At the lower surface deposition of amorphous silicon N of N-type silicon substrate layer, Main Function is to form heterojunction, and the amorphous silicon density is high simultaneously, can protect the inside of battery not to be subjected to the impact of aqueous vapor;

(4) deposition micro crystal silicon P layer;

Deposition micro crystal silicon P layer on the N-type silicon substrate, Main Function are to form heterojunction, and microcrystal silicon P and microcrystal silicon N afterwards form good tunnelling joint simultaneously, are conducive to passing through of charge carrier;

(5) the microcrystal silicon N layer of battery before the deposition;

The microcrystal silicon N layer of battery before deposition on microcrystal silicon P layer, it is the component part of front battery on the one hand, is that microcrystal silicon P with the front forms good tunnelling and saves on the other hand, is conducive to passing through of charge carrier;

(6) the intrinsic amorphous silicon I layer of battery before the deposition;

Adopt the amorphous silicon I layer of the front battery of method deposition of PECVD on microcrystal silicon N, it is front battery active layer;

(7) the amorphous silicon P layer of battery before the deposition;

At the deposition of amorphous silicon P of the I of amorphous silicon layer layer, it is the positive pole of front battery;

(8) two-sided preparation transparency conductive electrode;

The method preparation of sputter or metal oxide chemical deposition (MOCVD) can be adopted in the electrically conducting transparent pond, and Main Function is the charge carrier of collecting battery;

(9) preparation silver electrode;

The Main Function of silver electrode is the electric current collection solar cell, derives battery.

In the utility model, the resistivity of N-type silicon chip is: 0.3 cm-6 cm; The thickness that is deposited on the amorphous silicon I layer on the N-type silicon chip is: 5-30nm; The thickness of amorphous silicon N and microcrystal silicon is 10nm-30nm; The light sensitivity of the N of microcrystal silicon is 1-10, and conductivity is 1-10S/cm; Microcrystal silicon P light sensitivity is 1-10, and conductivity is at 0.1-10S/cm; The light sensitivity of amorphous silicon I layer is about 10 ⁵The thickness of the I layer of front battery (amorphous silicon PIN battery) is at 300nm-2000nm.

Beneficial effect: a kind of Jing Tigui amorphous silicon binodal battery described in the utility model has the following advantages:

1. the utility model takes full advantage of the spectrum of the sun, and efficient solar cell has been prepared in the light generating that can utilize cell backside to reflect simultaneously;

In the whole process of manufacture method described in the utility model without pyroprocess, improve to greatest extent effective minority carrier life time of crystalline silicon, improve the transformation efficiency of battery;

3. the whole manufacture process of method described in the utility model adopts preparation technology and the equipment of hull cell, and manufacturing cost is lower.

Description of drawings

Fig. 1 is structural representation of the present utility model.

Embodiment

Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, the present embodiment is implemented under take technical solutions of the utility model as prerequisite, should understand these embodiment and only be used for explanation the utility model and be not used in restriction scope of the present utility model.

Embodiment

A kind of Jing Tigui amorphous silicon binodal battery as shown in the figure comprises: N-type silicon substrate a, amorphous silicon I layer b, microcrystal silicon P layer c, amorphous silicon N layer d, microcrystal silicon N layer e, amorphous silicon intrinsic layer f, amorphous silicon P layer g, transparency conductive electrode h, the anodal j of battery and the negative pole k of battery; Described battery is followed successively by from top to down: the negative pole k of anodal j, the transparency conductive electrode h of battery, amorphous silicon P layer g, amorphous silicon intrinsic layer f, microcrystal silicon N layer e, microcrystal silicon P layer c, amorphous silicon I layer b, N-type silicon substrate a, amorphous silicon I layer b, amorphous silicon N layer d, transparency conductive electrode h, battery.

The manufacture method concrete steps of the described Jing Tigui of the present embodiment amorphous silicon binodal battery are as follows:

(1) select the N-type silicon substrate, and the resistivity of N-type silicon chip at 0.3 cm between 6 cm, and to n type single crystal silicon semiconductor substrate surface matte and carry out chemical cleaning, for the n type single crystal silicon substrate, adopt rare NaOH or potassium hydroxide solution to prepare the light trapping structure of Pyramid on the surface of substrate, clean with the hydrochloric acid and the hydrofluoric acid that dilute subsequently;

(2) at N-type silicon substrate two sides deposition intrinsic amorphous silicon I layer;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-10Torr, the ratio of hydrogen/silane in the scope of 1:10, adopt the amorphous silicon I layer of the method growth 3 to 30nm of PECVD at 10:1;

(3) deposition of amorphous silicon N layer;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-5Torr, the ratio of hydrogen/silane/phosphine in the scope of 50:6:1, adopt the amorphous silicon N layer of the method growth 10 to 30nm of PECVD at 200:3:1;

(4) deposition micro crystal silicon P layer;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-5Torr, the ratio of hydrogen/silane/borine adopt the microcrystal silicon P layer of the method growth 10 to 30nm of PECVD in 400:3:1 arrives the scope of 100:6:1;

(5) the microcrystal silicon N layer of battery before the deposition;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-5Torr, the ratio of hydrogen/silane/phosphine in the scope of 50:6:1, adopt the microcrystal silicon N layer of the method growth 10 to 30nm of PECVD at 200:3:1;

(6) the intrinsic amorphous silicon I layer of battery before the deposition;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-5Torr, the ratio of hydrogen/silane in the scope of 1:10, adopt the amorphous silicon I layer of the method growth 300 to 2000nm of PECVD at 10:1;

(7) the amorphous silicon P layer of battery before the deposition;

At the temperature of 180 ℃ to 300 ℃, deposition pressure 0.5-5Torr, the ratio of hydrogen/silane/borine in the scope of 50:6:1, adopt the amorphous P layer of the method growth 10 to 30nm of PECVD at 200:3:1;

(8) two-sided preparation transparency conductive electrode;

Can adopt method making ZnO or the ITO of sputter or metal oxide chemical deposition (MOCVD), Main Function is the charge carrier of collecting battery;

(9) preparation silver electrode: the positive pole of battery and negative pole;

Adopt printing in the silver electrode of method at the front and rear surfaces printed battery of transparent conductive electrode.

Claims

1. a Jing Tigui amorphous silicon binodal double-side cell, is characterized in that: comprising: the positive pole (j) of N-type silicon substrate (a), amorphous silicon I layer (b), microcrystal silicon P layer (c), amorphous silicon N layer (d), microcrystal silicon N layer (e), amorphous silicon intrinsic layer (f), amorphous silicon P layer (g), transparency conductive electrode (h), battery and the negative pole (k) of battery;

Described battery is followed successively by from top to down: the negative pole (k) of the positive pole of battery (j), transparency conductive electrode (h), amorphous silicon P layer (g), amorphous silicon intrinsic layer (f), microcrystal silicon N layer (e), microcrystal silicon P layer (c), amorphous silicon I layer (b), N-type silicon substrate (a), amorphous silicon I layer (b), amorphous silicon N layer (d), transparency conductive electrode (h), battery.

A kind of crystalline silicon according to claim 1 amorphous silicon binodal double-side cell, it is characterized in that: the resistivity of N-type silicon chip is: 0.3 cm-6 cm.

3. a kind of Jing Tigui amorphous silicon binodal battery according to claim 1, it is characterized in that: the thickness that is deposited on the amorphous silicon I layer on the N-type silicon chip is: 5-30nm; The thickness of amorphous silicon N and microcrystal silicon is 10nm-30nm.

4. a kind of Jing Tigui amorphous silicon binodal battery according to claim 1, it is characterized in that: the light sensitivity of the N of microcrystal silicon is 1-10, conductivity is 1-10S/cm; Microcrystal silicon P light sensitivity is 1-10, and conductivity is at 0.1-10S/cm; The light sensitivity of amorphous silicon I layer is about 10 ⁵