CN201323204Y - Antapex contact heterojunction solar battery - Google Patents
Antapex contact heterojunction solar battery Download PDFInfo
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- CN201323204Y CN201323204Y CNU2008201232735U CN200820123273U CN201323204Y CN 201323204 Y CN201323204 Y CN 201323204Y CN U2008201232735 U CNU2008201232735 U CN U2008201232735U CN 200820123273 U CN200820123273 U CN 200820123273U CN 201323204 Y CN201323204 Y CN 201323204Y
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- silicon substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to an antapex contact heterojunction solar battery. The solar battery is characterized in that the solar battery is divided into a plurality of units, and each unit adopts a P-type monocrystalline silicon wafer or an N-type monocrystalline silicon wafer as silicon substrate working as the base region of the battery; a passivation layer and an aluminum layer are arranged on the back surface of the silicon substrate in sequence from the inside out, and a point-contact base electrode is formed on the surface of the aluminum layer; an amorphous layer is deposited on the front surface of the silicon substrate to work as an emitter region of the battery; a transparent conductive thin film is arranged on the surface of the amorphous layer and an emitter region electrode is arranged on the thin film; and when in use, the base electrode and the emitter region electrode of each unit are respectively connected to the positive pole and the negative pole of electric equipment through conducting wires. The back surface of the silicon substrate adopts the point-contact base electrode through laser heating technology, thereby achieving the function of passivation, reducing electrode ohmic contact, and avoiding complex high-temperature sintering technology in conventional batteries; and the solar battery provided by the utility model has low request to environment cleanliness, so that the requirement for the substrate is not high, and conventional monocrystalline wafer in the market can be adopted.
Description
Technical field
The utility model relates to a kind of solar cell, particularly about a kind of ant-apex contact heterojunction solar battery.
Background technology
The antapex contact solar cell all designs the metal electrode and the emitter region of battery on the back of the body surface of battery, has avoided the influence of emitter region auger recombination to battery efficiency effectively.The dielectric layer on battery back of the body surface or metal level can strengthen light absorption effectively with arriving in the light reflected back cell body at the back side simultaneously.The electrode of battery all is arranged on back of the body surface, has simplified the interconnection between battery greatly, the preparation process of simplified assembly.But compare with conventional solar cell, the outstanding shortcoming of antapex contact solar cell is that complex process and cost are higher to the having relatively high expectations of material and production environment.
Heterojunction solar battery is a kind of mixed type solar battery that utilizes crystalline silicon substrates and amorphous silicon membrane to support, and the energy output that calculates by unit are is keeping world lead level.It is an emitter with noncrystal membrane silicon, and crystalline silicon is an absorbed layer, therefore has the stable and thin-film silicon cell advantages of being cheap of crystal silicon cell concurrently, and has the high efficiency that is equal to crystal silicon cell.The manufacture process of heterojunction solar battery adopts the low temperature preparation process of no High temperature diffusion, and thin crystal silicon chip and the silicon membrane layer of material employing, therefore has the advantages that energy consumption is little He the cost of material is low, and manufacturing process is simple relatively.
At present still there is not a technology can have the advantage of two kinds of above solar cells concurrently.
Summary of the invention
At the problems referred to above, the purpose of this utility model provides a kind of ant-apex contact heterojunction solar battery that has antapex contact solar cell and heterojunction solar battery advantage concurrently.
For achieving the above object, the utility model is taked following technical scheme: a kind of ant-apex contact heterojunction solar battery, it is characterized in that: it comprises the unit that links together that a plurality of structures are identical, and each described unit adopts P type or n type single crystal silicon sheet as the base of silicon substrate as described solar cell; The back of the body surface of described silicon substrate prepares passivation layer and aluminium lamination from the inside to the outside successively, uses laser heating technique to form some contact base electrode on described aluminium lamination surface; The front surface of described silicon substrate deposits the emitter region of amorphous layer as solar cell; Described amorphous surface has transparent conductive film and goes up the emitter region electrode that is provided with; The positive pole and the negative pole that during use the described base electrode of each unit and described emitter region electrode are connected power consumption equipment respectively by lead.
Described passivation layer attach most importance to one of doped amorphous silicon, microcrystal silicon or silicon dioxide.
Described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
Described emitter region electrode is a silver electrode.
The utility model is owing to take above technical scheme, it has the following advantages: 1, front surface of the present utility model is a heterojunction structure, back of the body surface is antapex contact battery structure, thereby combine effectively that the heterojunction battery process is simple, sintering temperature is low and characteristics cheaply, and the characteristics that antapex contact battery passivation ability is strong, photoelectric conversion efficiency is high.2, the utility model plays the effect of passivation silicon substrate front surface and Window layer owing at the silicon substrate front surface amorphous silicon layer is set, and the shortwave that improves battery absorbs, and improves the photoelectric conversion efficiency of battery greatly, and is easy to realize on technology.3, the back of the body of the utility model silicon substrate surface is because the some contact base electrode that adopts laser heating technique to realize, not only play the effect of passivation and reduction electrode ohmic contact, and avoided the high temperature sintering complicated technology in the conventional batteries, to environment cleanliness require low, therefore less demanding to substrate can adopt commercially available conventional single-chip.4, the back of the body of the present utility model surface is owing to be coated with the mirror metal aluminium lamination, and the light that back of the body surface is not absorbed by battery can also not reflected in the place of contact base electrode, improves the long wave absorption of battery.5, the utility model is except that doped region, the other parts temperature of silicon chip is low, and the quality of effectively having avoided silicon substrate possible contamination or other factors in pyroprocess to cause descends.The utility model can be widely used in the clean energy resource of producing high efficiency, low cost, to adapt to the growth requirement of society.
Description of drawings
Fig. 1 is the structural representation of adjacent two unit of the utility model
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in detail.
As shown in Figure 1, be the structural representation of adjacent two unit in the utility model ant-apex contact heterojunction solar battery, a solar cell is made up of many such unit.Each unit is arranged on the silicon substrate 1, obtains a complete solar panel after afterwards a plurality of unit being connected.
The utility model silicon substrate 1 is that thickness is 200～500 μ m, and resistivity is P type or the n type single crystal silicon sheet of 0.3～500 Ω cm, and silicon substrate 1 is as the base of solar cell.On the back of the body surface of silicon substrate 1 preparation thickness be the heavily doped amorphous silicon of 50～80nm or one of microcrystal silicon or silicon dioxide constitute passivation layer 2, to reduce charge carrier compound on silicon substrate 1 back of the body surface.Passivation layer 2 is provided with minute surface aluminium lamination 3, forms some contact base electrode 4 on aluminium lamination 3 surfaces.It more than is the architectural feature of antapex contact solar battery.
After the front surface of P type or N type silicon substrate 1 carries out the texturing processing, deposit amorphous layer 5 thereon, as the emitter region of battery.Amorphous layer 5 is composite beds that are made of two layers of material, and its lower floor is that thickness is the intrinsic a-Si:H layer of 10～15nm, the upper strata for silicon substrate 1 opposite polarity thickness be N type or the P type a-Si:H layer of 5～10nm.At amorphous layer 5 surface deposition transparent oxide conductive films (TCO) 6, silver (Ag) electrode is set on film afterwards as emitter region electrode 7.The positive and negative electrode that during use base electrode 4 and emitter region electrode 7 is connected power consumption equipment respectively by lead.It more than is the architectural feature of heterojunction solar battery.
In the foregoing description, back of the body surface amorphous, crystallite or the silicon dioxide passivation layer 2 of silicon substrate 1, reduced charge carrier and carried on the back the compound of surface at silicon substrate 1, so not only can reduce the ohmic contact of battery, the aluminium lamination 3 of contact base electrode 4 can also not reflect the light that is not absorbed by battery simultaneously, the long wave that increases battery absorbs, to improve the photoelectric conversion efficiency of battery.Base electrode 4 adopts laser heating technique to realize that Wavelength of Laser is 380～1200nm, and heating-up temperature is 800～1400 ℃, utilizes the metallic aluminium revulsive crystallization to form point contact electrode.Because the aluminium in the aluminium lamination 3 can make passivation layer 2 crystallization at a lower temperature, therefore avoided the high temperature sintering complicated technology in the conventional batteries.Except that the doped region of base electrode 4, the other parts of silicon chip are in relative low temperature, and the quality of so just having avoided silicon substrate 1 possible contamination or other factors in heating process to cause descends, and therefore the cleannes to environment require also high.
In the foregoing description, the amorphous silicon of amorphous layer 5 has unusual superior passivation ability to the front surface of silicon substrate 1, plays Window layer simultaneously, and the shortwave that improves battery absorbs, can improve the photoelectric conversion efficiency efficient of battery greatly, and on technology, be easy to realize.After the base electrode 4 of entire cell and emitter region electrode 7 complete, put it into and carry out sintering in the tube furnace.So just reduced the series resistance between silicon substrate 1 and base electrode 4 and the emitter region electrode 7, formed ohmic contact better, increased by electric current to improve conversion efficiency.
Embodiment below by to ant-apex contact heterojunction solar battery manufacture method of the present utility model further sets forth the utility model.
1) adopting thickness is 200 μ m, and resistivity is that the p type single crystal silicon of 3 Ω cm is as silicon substrate 1; , and front surface is carried out routine clean in silicon substrate 1 front surface tabulation plane textureization with the alkaline corrosion method.
2) passivation layer 2 that preparation heavily doped amorphous silicon or one of microcrystal silicon or silicon dioxide constitute on the back of the body surface of P type silicon substrate 1, thickness is 65nm.
3) method with magnetron sputtering or AM aluminum metallization is made aluminium lamination 3 on passivation layer 2, and thickness is 1～2 μ m, adopts laser heating technique to make and forms some contact base electrode 4 on the aluminium lamination 3, and Wavelength of Laser is 380～1200nm, 800～1400 ℃ of heating-up temperatures.After laser treatment finishes, remove residual doped source with the method for solvent clean, and dry, and solvent can be ionized water.
4) amorphous layer 5 of usefulness PECVD method deposition intrinsic a-Si:H layer and N type a-Si:H on P type silicon substrate 1 front surface.
5) be lower than on the amorphous layer 5 under 200 ℃ the low temperature, with sputtering technology deposit transparent oxide electroconductive film 6, thickness is 70nm.
6) with method and other conventional deposition process of silk screen printing, on conductive film 6, make silver electrode as emitter region electrode 7.
7), carry out sintering 400 ℃ of following temperature, thereby finish the manufacturing of ant-apex contact heterojunction solar battery with the cell integrated tube furnace of putting into.
Among the embodiment of the utility model method, silicon substrate 1 can adopt the P type also can adopt N type silicon chip, and its thickness changes between 200～500 μ m.The thickness of passivation layer 2 can change between 50～80nm, and its formation method can adopt the various deposition processs of prior art.The thickness of amorphous layer 5 can change between 5～10nm, and its generation type also can adopt various deposition process of the prior art.Aluminium lamination 3 can select for use other to have the metal or alloy material of mirror effect, and its thickness and generation type can adopt the variety of way of prior art.Emitter region electrode 7 can adopt silk screen printing, vacuum evaporation or sputtering method and other conventional deposition process to form.The variation of above-mentioned various materials and the variation of manufacture method should not got rid of outside protection range of the present utility model.
Claims (5)
1, a kind of ant-apex contact heterojunction solar battery is characterized in that: it comprises the unit that links together that a plurality of structures are identical, and each described unit adopts P type or n type single crystal silicon sheet as the base of silicon substrate as described solar cell; The back of the body surface of described silicon substrate prepares passivation layer and aluminium lamination from the inside to the outside successively, uses laser heating technique to form some contact base electrode on described aluminium lamination surface; The front surface of described silicon substrate deposits the emitter region of amorphous layer as solar cell; Described amorphous surface has transparent conductive film and goes up the emitter region electrode that is provided with; The positive pole and the negative pole that during use the described base electrode of each unit and described emitter region electrode are connected power consumption equipment respectively by lead.
2, a kind of ant-apex contact heterojunction solar battery as claimed in claim 1 is characterized in that: described passivation layer attach most importance to one of doped amorphous silicon, microcrystal silicon or silicon dioxide.
3, a kind of ant-apex contact heterojunction solar battery as claimed in claim 1 is characterized in that: described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
4, a kind of ant-apex contact heterojunction solar battery as claimed in claim 2 is characterized in that: described amorphous layer constitutes by intrinsic a-Si:H layer with opposite polarity N type of described silicon substrate or P type a-Si:H layer.
5, as claim 1 or 2 or 3 or 4 described a kind of ant-apex contact heterojunction solar batteries, it is characterized in that: described emitter region electrode is a silver electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201232735U CN201323204Y (en) | 2008-12-31 | 2008-12-31 | Antapex contact heterojunction solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201232735U CN201323204Y (en) | 2008-12-31 | 2008-12-31 | Antapex contact heterojunction solar battery |
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| CN201323204Y true CN201323204Y (en) | 2009-10-07 |
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| CNU2008201232735U Expired - Fee Related CN201323204Y (en) | 2008-12-31 | 2008-12-31 | Antapex contact heterojunction solar battery |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN102751371A (en) * | 2012-07-06 | 2012-10-24 | 浙江正泰太阳能科技有限公司 | Solar thin film battery and manufacturing method thereof |
| CN104704639A (en) * | 2012-10-04 | 2015-06-10 | 信越化学工业株式会社 | Solar cell manufacturing method |
| CN107068779A (en) * | 2017-02-28 | 2017-08-18 | 中山大学 | A kind of solar battery structure and preparation method thereof |
| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
-
2008
- 2008-12-31 CN CNU2008201232735U patent/CN201323204Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN102751371A (en) * | 2012-07-06 | 2012-10-24 | 浙江正泰太阳能科技有限公司 | Solar thin film battery and manufacturing method thereof |
| CN102751371B (en) * | 2012-07-06 | 2015-04-01 | 浙江正泰太阳能科技有限公司 | Solar thin film battery and manufacturing method thereof |
| CN104704639A (en) * | 2012-10-04 | 2015-06-10 | 信越化学工业株式会社 | Solar cell manufacturing method |
| CN104704639B (en) * | 2012-10-04 | 2017-02-22 | 信越化学工业株式会社 | Solar cell manufacturing method |
| CN107068779A (en) * | 2017-02-28 | 2017-08-18 | 中山大学 | A kind of solar battery structure and preparation method thereof |
| CN107068779B (en) * | 2017-02-28 | 2019-01-18 | 中山大学 | A kind of solar battery structure and preparation method thereof |
| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20141231 |
|
| EXPY | Termination of patent right or utility model |