CN107946382A - Solar cell that MWT is combined with HIT and preparation method thereof - Google Patents
Solar cell that MWT is combined with HIT and preparation method thereof Download PDFInfo
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- CN107946382A CN107946382A CN201711137599.3A CN201711137599A CN107946382A CN 107946382 A CN107946382 A CN 107946382A CN 201711137599 A CN201711137599 A CN 201711137599A CN 107946382 A CN107946382 A CN 107946382A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 30
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 28
- 239000011440 grout Substances 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 239000006210 lotion Substances 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of MWT solar cells combined with HIT and preparation method thereof, the solar cell that MWT is combined with HIT is multilayer structure making, it is characterised in that is down followed successively by from front：Front metal electrode, oxidic, transparent, conductive layers, p-type non-crystalline silicon, intrinsic amorphous silicon, N-shaped crystal silicon substrate, intrinsic amorphous silicon, N-shaped non-crystalline silicon, oxidic, transparent, conductive layers and back metal electrode；The multilayer structure making is equipped with through hole, and grout metal electrode is filled with through hole, and the top of the grout metal electrode is connected covered with front metal electrode, bottom with the back metal electrode of identical component.The present invention provides a kind of new structure and preparation method, the strong applicability of the method, use value height for volume production high-efficiency silicon solar cell.
Description
Technical field
The present invention relates to a kind of MWT solar cells combined with HIT and preparation method thereof, belong to solar cell and system
Preparation Method technical field.
Background technology
Solar cell is a kind of semiconductor devices that luminous energy can be changed into electric energy, and photovoltaic generation industry experienced skill
Art and capital it is superseded after, develop progressively towards the direction of high efficiency and low cost.For current conventional solar cell,
Positive and negative electrode is located at the tow sides of cell piece respectively.Since the front of cell piece is at the same time smooth surface, in positive metal
Electrode main grid line and thin grid line can block a part of area on surface, so as to cause a part of incident light loss.Common crystal silicon is too
Positive energy battery front side metal electrode about covers the surface area of 5-7% or so, and reducing the area of metal electrode can directly improve
The energy conversion efficiency of battery.
MWT (Metal Wrap Through) is a kind of effectively to reduce the Efficient back-contact of front metal shielded area too
Positive energy battery structure.Front electrode is connected to the back side by it by the hole through battery, and then utilizes the electrode for filling hole
Collect the photoelectric current from front electrode.Back contact structure can form component connection of circuit in cell backside completely, and front is not
Need welding collected current, therefore the front electrode of MWT is not required main grid, as low as 30 μm at present of thin grid width, front electrode
Coating ratio be reduced to 3% or so, reduce half than conventional batteries.Another high performance solar batteries use HIT
(Heterojunction with Intrinsic Thin-layer) heterojunction structure, it is non-with the p/i types of light irradiation side
Crystal silicon and the i/n type non-crystalline silicons of rear side clamp the crystal silicon chip of centre, and the top layer in both sides forms transparent electrode and collection
Electrode, forms the HIT solar cells with symmetrical structure.Such battery combine thin-film solar cells low temperature (<260℃)
The advantages of manufacture, avoid using traditional high temperature (>900 DEG C) diffusion technique obtains p-n junction, and efficiency value also have it is larger
Advantage.
But the battery of both structures there is also it is respective the problem of.For MWT battery, although electrode coverage product is bright
It is aobvious to reduce, but since the reasons such as PN junction structure, passivation, the efficiency value of battery are lower compared with HIT.And although HIT batteries are shown
The efficiency of higher, but its front electrode area coverage is big, and still using the method for welding connection.It is hidden that this be easy to cause cell piece
Split and the decay that generates electricity, and thin silicon chip technology cannot be applied to reduce cost.
The content of the invention
Goal of the invention：In order to overcome the problem of being individually present in existing MWT and HIT technologies and shortcoming, the present invention provides one
Solar cell that kind MWT is combined with HIT and preparation method thereof, it is therefore an objective to solve Railway Project：(1) it is positive in HIT batteries
Electrode coverage product is big, and incident light loss is big；(2) mutually it is connected with welding in HIT battery components, be easy to cause and hidden split and decline
Subtract, and thin silicon chip technology cannot be applied；(3) MWT battery passivation effect deficiency, electricity conversion are less than HIT.
Technical solution：The solar cell that a kind of MWT is combined with HIT, is multilayer structure making, from positive (upper surface) down
It is followed successively by：Front metal electrode, oxidic, transparent, conductive layers (TCO), p-type non-crystalline silicon ((p) a-Si), intrinsic amorphous silicon ((i) a-
Si), N-shaped crystal silicon substrate ((n) c-Si), intrinsic amorphous silicon ((i) a-Si), N-shaped non-crystalline silicon ((n) a-Si), electrically conducting transparent oxygen
Change layer (TCO) and back metal electrode；The multilayer structure making is equipped with through hole, and grout metal electrode is filled with through hole,
The top of the grout metal electrode is connected covered with front metal electrode, bottom with the back metal electrode of identical component.
N-shaped crystalline silicon matrix thickness of the present invention is preferably 80-180 μm.
Front metal electrode of the present invention, back metal electrode are made of silver or copper material.
Oxidic, transparent, conductive layers (TCO) of the present invention are indium doping tin oxide (ITO), or fluorine-doped tin oxide
(FTO), or aluminium-doped zinc oxide (AZO), thickness are preferably 0.1-1 μm.
P-type non-crystalline silicon ((p) a-Si) of the present invention, intrinsic amorphous silicon ((i) a-Si), N-shaped non-crystalline silicon ((n) a-Si)
Thickness is respectively preferably 5-15nm.
Grout metal electrode conductive compositions of the present invention are silver or copper.
The present invention proposes the preparation method for the silicon solar cell that above-mentioned MWT is combined with HIT at the same time, comprises the following steps：
1) crystalline silicon cleaning, making herbs into wool；
2) obverse and reverse sides of crystal silicon substrate respectively deposit one layer of intrinsic amorphous silicon；
3) one layer of p-type non-crystalline silicon of front deposition；
4) back side covers the mask of one layer of circular pattern, and overall mask pattern is n*n matrixes, n≤4；
5) one layer of N-shaped non-crystalline silicon of backside deposition；
6) obverse and reverse sides respectively deposit layer of transparent conductive layer TCO；
7) removal step 4) in mask；
8) punched with laser, the position of hole is the center of circle of circular masked areas；
9) grout metal electrode and back metal electrode once overleaf are printed at the same time, and be heating and curing；
10) front metal electrode is printed in front, and be heating and curing；
11) battery testing.
Wherein, the step 2), 3), 5) in using plasma enhancing chemical vapour deposition technique (PECVD) prepare it is non-
Crystal silicon layer；
Mask used component is paraffin or other organic compounds in the step 4), and the method for covering is screen printing
Brush；
Transparency conducting layer is prepared using magnetron sputtering method or chemical vapour deposition technique (CVD) in the step 6)；
Using potassium hydroxide or other strong base solutions as washing lotion in the step 7), single side is gone in online roller type equipment
Except mask layer；
Red laser, wavelength 1064nm are used in the step 8)；
Grout electrode and backplate are printed using slurry of the same race in the step 9)；
The step 9), 10) in metal electrode condition of cure it is identical, temperature is 150-220 DEG C, and the time is 10-20 point
Clock.
Beneficial effect：Compared with prior art, the solar cell and its system that MWT provided by the present invention is combined with HIT
Preparation Method, its remarkable advantage are the deficiency for combining the advantage of MWT and HIT batteries and compensate for the two.First, it is of the invention
Battery structure front electrode area coverage it is smaller than HIT, incident light loss reduces；Secondly, eliminate in HIT battery components with weldering
Mode with interconnection, can effectively reduce it is hidden split and decay, and further reduce the cost using thin silicon wafer；Again, it is intrinsic non-
Crystal silicon layer completes the surface passivation of monocrystalline silicon while pn-junction is formed, and greatly reduces leakage current, improves battery efficiency.And
And whole cell manufacturing process be at low temperature carry out (<260 DEG C), silicon chip flexural deformation is small, also eliminates silicon substrate in high temperature
Performance degradation in processing.
Brief description of the drawings
Fig. 1 is the battery structure schematic diagram of the embodiment of the present invention；Each label is followed successively by figure：1st, N-shaped crystal silicon substrate
((n) c-Si), 2, intrinsic amorphous silicon ((i) a-Si), 3, p-type non-crystalline silicon ((p) a-Si), 4, N-shaped non-crystalline silicon ((n) a-Si), 5,
Oxidic, transparent, conductive layers (TCO), 6, grout metal electrode, 7, back metal electrode, 8, front metal electrode.
Embodiment
With reference to specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate the present invention
Rather than limit the scope of the invention, after the present invention has been read, various equivalences of the those skilled in the art to the present invention
The modification of form falls within the application appended claims limited range.
Embodiment：The silicon solar battery structure that the MWT and HIT of the present embodiment are combined is as shown in Figure 1, battery is multilayer knot
Structure body, including be down sequentially overlapped from positive (upper surface)：Front metal electrode 8, oxidic, transparent, conductive layers (TCO) 5, p-type
Non-crystalline silicon ((p) a-Si) 3, intrinsic amorphous silicon ((i) a-Si) 2, N-shaped crystal silicon substrate ((n) c-Si) 1, intrinsic amorphous silicon ((i)
A-Si) 2, N-shaped non-crystalline silicon ((n) a-Si) 4, oxidic, transparent, conductive layers (TCO) 5, back metal electrode 7.Above-mentioned multilayer structure making
Through hole is equipped with, grout metal electrode 6 is filled with hole, the top of the grout metal electrode 6 is covered with front metal electrode
8, bottom is connected with the back metal electrode 6 of identical component.
Using the 156mm length of sides, 180 μm of thickness N-shaped monocrystalline silicon piece as basis material, the silicon sun that above-mentioned MWT is combined with HIT
The preparation method of energy battery comprises the following steps that：
1) crystal silicon chip is cleaned, and does making herbs into wool processing；
2) one layer of 8nm is respectively deposited using obverse and reverse sides of the plasma enhanced chemical vapor deposition method (PECVD) in silicon chip
Thick intrinsic amorphous silicon；
3) the p-type non-crystalline silicon of one layer of 10nm thickness is deposited in front using PECVD, doping concentration is 1 × 1019cm-3；
4) silk-screen printing is used, overleaf printing diameter is the circular paraffin-protected mask of 3mm, and mask global pattern is 6*
6 matrixes；
5) the N-shaped non-crystalline silicon of one layer of 10nm thickness is overleaf deposited using PECVD, doping concentration is 1 × 1019cm-3；
6) the transparency conducting layer indium doping tin oxide of one layer of 200nm thickness is respectively deposited in obverse and reverse sides using magnetron sputtering method
(ITO)；
7) use potassium hydroxide solution removal step 4 in online roller type equipment) in protection mask；
8) punched with 1064nm laser from the back side, hole diameter is 200 μm, and position is each circular masked areas
The center of circle, institute's hole are similarly 6*6 matrixes；
9) silk-screen printing is used, overleaf (solidification temperature of conductive silver glue is 150-250 with low-temperature conductive elargol of the same race
Degree), grout metal electrode and back metal electrode once are printed at the same time, is heating and curing within 15 minutes in 200 DEG C of baking ovens；
10) low-temperature conductive silver offset printing brush front metal electrode is used in front, be heating and curing within 15 minutes in 200 DEG C of baking ovens；
11) battery testing.
The present invention provides a kind of new structure and preparation method, the sun of preparation for volume production high-efficiency silicon solar cell
Energy battery has heretofore described excellent properties, and the strong applicability of the method, includes huge use value.
Claims (10)
1. the solar cell that a kind of MWT is combined with HIT, is multilayer structure making, it is characterised in that is down followed successively by from front：
Front metal electrode, oxidic, transparent, conductive layers（TCO）, p-type non-crystalline silicon（(p)a-Si）, intrinsic amorphous silicon（(i)a-Si）, N-shaped it is brilliant
Body silicon substrate（(n)c-Si）, intrinsic amorphous silicon（(i)a-Si）, N-shaped non-crystalline silicon（(n)a-Si）, oxidic, transparent, conductive layers（TCO）
With back metal electrode；The multilayer structure making is equipped with through hole, and grout metal electrode, the grout gold are filled with through hole
The top for belonging to electrode is connected covered with front metal electrode, bottom with the back metal electrode of identical component.
2. the solar cell that MWT as claimed in claim 1 is combined with HIT, it is characterised in that the N-shaped crystal silicon substrate
Thickness is 80-180 μm.
3. the solar cell that MWT as claimed in claim 1 is combined with HIT, it is characterised in that the oxidic, transparent, conductive layers
（TCO）For indium doping tin oxide（ITO）, or fluorine-doped tin oxide（FTO）, or aluminium-doped zinc oxide（AZO）, thickness is
0.1-1μm。
4. the solar cell that MWT as claimed in claim 1 is combined with HIT, it is characterised in that the p-type non-crystalline silicon, intrinsic
Non-crystalline silicon, the thickness of N-shaped non-crystalline silicon are respectively 5-15 nm.
5. the preparation method for the silicon solar cell that the MWT as described in claim 1-4 any one is combined with HIT, its feature
It is, comprises the following steps：
1）Crystalline silicon cleaning, making herbs into wool；
2）The obverse and reverse sides of crystal silicon substrate respectively deposit one layer of intrinsic amorphous silicon；
3）Front one layer of p-type non-crystalline silicon of deposition；
4）The back side covers the mask of one layer of circular pattern, and overall mask pattern is n*n matrixes, n≤4；
5）One layer of N-shaped non-crystalline silicon of backside deposition；
6）Obverse and reverse sides respectively deposit layer of transparent conductive layer TCO；
7）Removal step 4）In mask；
8）Punched with laser, the position of hole is the center of circle of circular masked areas；
9）Grout metal electrode and back metal electrode once overleaf are printed at the same time, and is heating and curing；
10）Front metal electrode is printed in front, and is heating and curing；
11）Battery testing.
6. the preparation method for the silicon solar cell that MWT as claimed in claim 5 is combined with HIT, it is characterised in that the step
Rapid 2）、3）、5）In using plasma enhancing chemical vapour deposition technique（PECVD）Prepare amorphous silicon layer.
7. the preparation method for the silicon solar cell that MWT as claimed in claim 5 is combined with HIT, it is characterised in that the step
Rapid 6）It is middle to use magnetron sputtering method or chemical vapour deposition technique（CVD）Prepare transparency conducting layer.
8. the preparation method for the silicon solar cell that MWT as claimed in claim 5 is combined with HIT, it is characterised in that the step
Rapid 7）It is middle that washing lotion is used as using potassium hydroxide or other strong base solutions, single side removal mask layer in online roller type equipment.
9. the preparation method for the silicon solar cell that MWT as claimed in claim 5 is combined with HIT, it is characterised in that the step
Rapid 8）It is middle to use red laser, wavelength 1064nm；The step 9）Middle grout electrode and backplate are printed using slurry of the same race
Brush.
10. the preparation method for the silicon solar cell that MWT as claimed in claim 5 is combined with HIT, it is characterised in that described
Step 9）、10）The condition of cure of middle metal electrode is identical, and temperature is 150-220 DEG C, and the time is 10-20 minutes.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711137599.3A CN107946382A (en) | 2017-11-16 | 2017-11-16 | Solar cell that MWT is combined with HIT and preparation method thereof |
| PCT/CN2018/088319 WO2019095662A1 (en) | 2017-11-16 | 2018-05-25 | Solar battery with combined mwt and hit, and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711137599.3A CN107946382A (en) | 2017-11-16 | 2017-11-16 | Solar cell that MWT is combined with HIT and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107946382A true CN107946382A (en) | 2018-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711137599.3A Pending CN107946382A (en) | 2017-11-16 | 2017-11-16 | Solar cell that MWT is combined with HIT and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107946382A (en) |
| WO (1) | WO2019095662A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473492A (en) * | 2018-12-20 | 2019-03-15 | 江苏日托光伏科技股份有限公司 | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production |
| CN109473493A (en) * | 2018-12-20 | 2019-03-15 | 江苏日托光伏科技股份有限公司 | A kind of MWT hetero-junction silicon solar cell and preparation method thereof |
| WO2019095662A1 (en) * | 2017-11-16 | 2019-05-23 | 江苏日托光伏科技股份有限公司 | Solar battery with combined mwt and hit, and preparation method therefor |
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