CN204361108U - A kind of HIT solar cell - Google Patents
A kind of HIT solar cell Download PDFInfo
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- CN204361108U CN204361108U CN201420719389.0U CN201420719389U CN204361108U CN 204361108 U CN204361108 U CN 204361108U CN 201420719389 U CN201420719389 U CN 201420719389U CN 204361108 U CN204361108 U CN 204361108U
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Abstract
The utility model discloses a kind of HIT solar cell, it comprises: n type single crystal silicon sheet, and described n type single crystal silicon sheet is provided with electrode converging hole; Sequentially be located at intrinsic amorphous silicon passivation film, P type doped amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet sensitive surface and electrode converging hole inwall; Sequentially be located at the intrinsic amorphous silicon passivation film of n type single crystal silicon sheet shady face, N-type doped amorphous silicon layer and transparent conductive film layer; Be located at the first metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet sensitive surface and the transparent conductive film layer of electrode converging hole inwall respectively; Be located at the second metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet shady face; Be located at the metal primary line electrode in the exit in n type single crystal silicon sheet shady face electrode converging hole, described metal primary line electrode is connected with the first metal grid lines electrode of electrode converging hole inwall.The utility model increases the energy output of solar module, adds the utilance of light, improves battery short circuit electric current.
Description
Technical field
The utility model relates to technical field of solar cells, particularly relates to a kind of HIT solar cell.
Background technology
High efficiency, low cost are the targets that photovoltaic industry is pursued always.For solar cell, optical loss is one of significant obstacle hindering efficiency of solar cell to improve.
At present, although by increasing anti-reflection rete and anti-reflection structure on battery sensitive surface surface, effectively can reduce the light reflection of solar battery surface, but carry out electric current collection owing to being printed with metal grid lines electrode at battery sensitive surface, still cause a part of light blocked by metal grid lines electrode and cannot be absorbed by battery.Therefore, photovoltaic in the industry part company proposed to adopt the battery structure of back-contact electrode to solve the problem of metal grid lines electrode shading.But, for the HIT battery structure of traditional double-side photic, adopt back-contact electrode to make cell backside accept reverberation, reduce the energy output of assembly.
Utility model content
The purpose of this utility model is the defect overcoming prior art, provides a kind of HIT solar cell.It reduces traditional double-side photic HIT battery sensitive surface master metal grid line blocking light, improves battery short circuit electric current.
For achieving the above object, the utility model adopts following design:
A kind of HIT solar cell, it comprises:
N type single crystal silicon sheet, described n type single crystal silicon sheet is provided with electrode converging hole;
Sequentially be located at intrinsic amorphous silicon passivation film, P type doped amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet sensitive surface and electrode converging hole inwall respectively;
Sequentially be located at the intrinsic amorphous silicon passivation film of n type single crystal silicon sheet shady face, N-type doped amorphous silicon layer and transparent conductive film layer;
Be located at the first metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet sensitive surface and the transparent conductive film layer of electrode converging hole inwall respectively;
Be located at the second metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet shady face;
Be located at the metal primary line electrode in the exit in n type single crystal silicon sheet shady face electrode converging hole, described metal primary line electrode is connected with the first metal grid lines electrode of electrode converging hole inwall.
Preferably, the diameter in described electrode converging hole is 200 μm-1500 μm;
Preferably, described nesa coating layer thickness is 80nm ~ 120nm.
Preferably, the width of described first metal grid lines electrode and the second metal grid lines electrode is 40 μm ~ 100 μm.
Preferably, described first metal grid lines electrode and the second metal grid lines electrode orthogonal vertical.
Preferably, described metal primary line electrode is Ag metal primary line electrode.
The utility model adopts above design, at the sensitive surface of battery without metal primary line electrode, electrode collects the shady face that primary gate electrode is incorporated into battery by hole, decrease the shading-area of traditional HIT battery metal primary gate electrode, simultaneously shady face adopt metal grid lines electrode that back reflected light also can be made absorb by battery, increase the energy output of solar module, add the utilance of light, improve battery short circuit electric current.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of HIT solar cell of the utility model;
In Fig. 2, a-h is the utility model HIT solar cell Making programme schematic diagram;
In Fig. 3, a-b is the utility model HIT solar cell double-sided electrode distribution schematic diagram.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
As described in Figure 1, a kind of HIT solar cell described in the utility model, it comprises:
N type single crystal silicon sheet 1, described n type single crystal silicon sheet 1 is provided with electrode converging hole 8;
Sequentially be located at the intrinsic amorphous silicon passivation film 2 on n type single crystal silicon sheet 1 sensitive surface and electrode converging hole 8 inwall, P type doped amorphous silicon layer 3 and transparent conductive film layer 5 respectively;
Sequentially be located at the intrinsic amorphous silicon passivation film 2 of n type single crystal silicon sheet 1 shady face, N-type doped amorphous silicon layer 4 and transparent conductive film layer 5;
Be located at the first metal grid lines electrode 6 on the transparent conductive film layer 5 of n type single crystal silicon sheet 1 sensitive surface and the transparent conductive film layer 5 of electrode converging hole inwall 8 respectively;
Be located at the second metal grid lines electrode 7 on the transparent conductive film layer 5 of n type single crystal silicon sheet 1 shady face;
Be located at the metal primary line electrode 9 in 8 exits in n type single crystal silicon sheet 1 shady face electrode converging hole, described metal primary line electrode 9 is connected with the first metal grid lines electrode 6 of electrode converging hole 8 inwall.
Wherein, the diameter in described electrode converging hole 8 is 200 μm-1500 μm; Described transparent conductive film layer 5 thickness is 80nm ~ 120nm.The width of described first metal grid lines electrode 6 and the second metal grid lines electrode 7 is 40 μm ~ 100 μm.Described first metal grid lines electrode 6 and the second metal grid lines electrode 7 orthogonal vertical.Described metal primary line electrode 9 is Ag metal primary line electrode.
As shown in Figure 2, the concrete manufacturing process of HIT solar cell described in the utility model can be as follows: step 1: as shown in Figure 2 a, at n type single crystal silicon sheet 1 laser beam drilling, forms bus electrode hole 8;
Step 2: as shown in Figure 2 b, passes through PECVD deposition intrinsic amorphous silicon film layer 2, P type doped amorphous silicon rete 3 and magnetron sputtering nesa coating 5 successively at the sensitive surface of n type single crystal silicon sheet 1 and the inwall in electrode converging hole 8;
Step 3: as shown in Figure 2 c, carries out patterned mask 001 at the shady face of n type single crystal silicon sheet 1 facing to the position in electrode converging hole 8;
Step 4: as shown in Figure 2 d, at shady face patterned mask 001 opening part of n type single crystal silicon sheet 1, deposits one deck intrinsic amorphous silicon rete 2, N-type doped amorphous silicon rete 4 and magnetron sputtering nesa coating 5 successively by PECVD;
Step 5: as shown in Figure 2 e, removes the patterned mask 001 in region, shady face electrode converging hole 8;
Step 6: as shown in figure 2f, the transparent conductive film layer 5 of sensitive surface and shady face carries out gate line electrode patterned mask 002 respectively;
Step 7: as shown in Figure 2 g, sensitive surface transparent conductive film layer 5 is electroplated the first metal grid lines electrode 6 and electroplates the main gate line orthogonal vertical of the second metal grid lines electrode 7, first metal grid lines electrode 6 and the second metal grid lines 7 at shady face transparent conductive film layer 5;
Step 8: as shown in fig. 2h, the opening part printing Ag metal primary line electrode 9 in shady face electrode converging hole 8.
Wherein, as shown in Figure 3 a, shady face metal grid lines distribution of electrodes as shown in Figure 3 b for sensitive surface metal grid lines distribution of electrodes.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (6)
1. a HIT solar cell, is characterized in that, it comprises:
N type single crystal silicon sheet, described n type single crystal silicon sheet is provided with electrode converging hole;
Sequentially be located at intrinsic amorphous silicon passivation film, P type doped amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet sensitive surface and electrode converging hole inwall respectively;
Sequentially be located at the intrinsic amorphous silicon passivation film of n type single crystal silicon sheet shady face, N-type doped amorphous silicon layer and transparent conductive film layer;
Be located at the first metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet sensitive surface and the transparent conductive film layer of electrode converging hole inwall respectively;
Be located at the second metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet shady face;
Be located at the metal primary line electrode in the exit in n type single crystal silicon sheet shady face electrode converging hole, described metal primary line electrode is connected with the first metal grid lines electrode of electrode converging hole inwall.
2. HIT solar cell according to claim 1, is characterized in that: the diameter in described electrode converging hole is 200 μm-1500 μm.
3. according to HIT solar cell according to claim 1, it is characterized in that: described nesa coating layer thickness is 80nm ~ 120nm.
4. according to HIT solar cell according to claim 1, it is characterized in that: the width of described first metal grid lines electrode and the second metal grid lines electrode is 40 μm ~ 100 μm.
5. according to HIT solar cell according to claim 1, it is characterized in that: described first metal grid lines electrode and the second metal grid lines electrode orthogonal vertical.
6. according to HIT solar cell according to claim 1, it is characterized in that: described metal primary line electrode is Ag metal primary line electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420719389.0U CN204361108U (en) | 2014-11-25 | 2014-11-25 | A kind of HIT solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420719389.0U CN204361108U (en) | 2014-11-25 | 2014-11-25 | A kind of HIT solar cell |
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| CN204361108U true CN204361108U (en) | 2015-05-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107863404A (en) * | 2017-12-05 | 2018-03-30 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar cell string and photovoltaic module |
| CN109196659A (en) * | 2017-12-05 | 2019-01-11 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar battery string and photovoltaic module |
| CN109716535A (en) * | 2016-04-01 | 2019-05-03 | 太阳能公司 | Three-layer semiconductor for patterned features on the solar cell stacks |
| WO2019095662A1 (en) * | 2017-11-16 | 2019-05-23 | 江苏日托光伏科技股份有限公司 | Solar battery with combined mwt and hit, and preparation method therefor |
| CN111599876A (en) * | 2020-06-02 | 2020-08-28 | 上海空间电源研究所 | Plastic substrate film battery for leading front electrode to another side of battery and preparation method thereof |
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2014
- 2014-11-25 CN CN201420719389.0U patent/CN204361108U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109716535A (en) * | 2016-04-01 | 2019-05-03 | 太阳能公司 | Three-layer semiconductor for patterned features on the solar cell stacks |
| US11355654B2 (en) | 2016-04-01 | 2022-06-07 | Sunpower Corporation | Tri-layer semiconductor stacks for patterning features on solar cells |
| CN109716535B (en) * | 2016-04-01 | 2023-06-02 | 迈可晟太阳能有限公司 | Three-layer semiconductor stack for patterning features on solar cells |
| US11935972B2 (en) | 2016-04-01 | 2024-03-19 | Maxeon Solar Pte. Ltd. | Tri-layer semiconductor stacks for patterning features on solar cells |
| WO2019095662A1 (en) * | 2017-11-16 | 2019-05-23 | 江苏日托光伏科技股份有限公司 | Solar battery with combined mwt and hit, and preparation method therefor |
| CN107863404A (en) * | 2017-12-05 | 2018-03-30 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar cell string and photovoltaic module |
| CN109196659A (en) * | 2017-12-05 | 2019-01-11 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar battery string and photovoltaic module |
| CN111599876A (en) * | 2020-06-02 | 2020-08-28 | 上海空间电源研究所 | Plastic substrate film battery for leading front electrode to another side of battery and preparation method thereof |
| CN111599876B (en) * | 2020-06-02 | 2022-09-02 | 上海空间电源研究所 | Preparation method of plastic substrate thin film battery for leading front electrode to other side of battery |
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Effective date of registration: 20171026 Address after: 362000, No. five, wellspring Road, Jinjiang Economic Development Zone, Quanzhou, Fujian, 17 Patentee after: Fujian Jinshi Energy Co., Ltd. Address before: 362000, Fujian Quanzhou Licheng hi tech Zone, Chang Tai Street, Sin Tong community, Jun Stone Industrial Park, building 2 Patentee before: Quanzhou City Botai Semiconductor Technology Co., Ltd. |
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| TR01 | Transfer of patent right |