CN205231076U - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
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- CN205231076U CN205231076U CN201520862710.5U CN201520862710U CN205231076U CN 205231076 U CN205231076 U CN 205231076U CN 201520862710 U CN201520862710 U CN 201520862710U CN 205231076 U CN205231076 U CN 205231076U
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Abstract
The utility model discloses a heterojunction solar cell, it includes: N type monocrystalline silicon piece, establish at the intrinsic non -crystalline silicon passivation layer of N type monocrystalline silicon piece sensitive surface with the face of being shaded, establish the P type doping amorphous silicon layer on N type monocrystalline silicon piece sensitive surface intrinsic non -crystalline silicon passivation layer, establish the N type doping amorphous silicon layer on N type monocrystalline silicon piece is shaded face intrinsic non -crystalline silicon passivation layer, establish the transparent conducting film layer on P type doping amorphous silicon layer, establish the transparent conducting film layer on N type doping amorphous silicon layer, establish the copper grid line electrode on P type doping amorphous silicon layer's transparent conducting film layer, establish the copper grid line electrode on N type doping amorphous silicon layer's transparent conducting film layer, establish the electrotinplate layer at dual copper grid line electrode top respectively. The utility model discloses increaseed the cohesion of copper grid line electrode, the tin layer is also played guard electrode and is helped the effect of welding simultaneously.
Description
Technical field
The utility model relates to area of solar cell, particularly relates to a kind of heterojunction solar battery.
Background technology
Along with developing rapidly of photovoltaic industry, the solar cell industry technology of preparing that active demand a kind of technological process in market is simple, electricity conversion is high reduces photovoltaic generation cost, and photovoltaic generation cost is reached with civil power with valency or the target lower than civil power price.Heterojunction solar battery is owing to combining the advantage of monocrystaline silicon solar cell and non-crystal silicon solar cell, and this battery has the features such as preparation technology's temperature is low, conversion efficiency is high, hot properties is good, can realize a kind of lower price high efficiency battery.Because the temperature deterioration factor of heterojunction solar battery is little, and generating electricity on two sides.Under equal area condition, annual energy output can be higher than polycrystal silicon cell by 15 ~ 30%, therefore has very large market potential.
But current, silver slurry screen printing technique is the first-selection realizing solar cell top gate line electrode.For conventional crystalline silicon solar cell, its screen printing technique adopts high temperature silver slurry, silver grating line and silicon face is made to form alloy-layer by high temperature (about 850 DEG C) sintering, this ensure that the adhesive force on silver-colored line and cell piece surface, but the technological temperature of heterojunction solar battery is no more than 250 DEG C, so low-temperature silver can only be used to starch meet technological requirement, but with the grid line after the printing of low-temperature silver slurry after ~ 200 DEG C of solidifications, its not with the nesa coating generation physics be covered in amorphous silicon film layer or chemical reaction, cause adhesion between the two poor, this can cause the problem of further battery sheet series welding and component package.In addition, the general conductivity of silver grating line electrode is bad, and live width is difficult to accomplish that <80 μm to increase effective extinction area of sensitive surface, and this is that the photoelectric conversion efficiency improving cell piece brings difficulty.In addition, one of feature of hetero-junction solar cell sheet is that the back side adopts close grid line, and its moire grids density is 2-3 times of sensitive surface, and therefore the consumption of silver too much significantly can increase the manufacturing cost of cell piece.Use screen printing technique, need sensitive surface and the shady face of printing cells respectively, after sensitive surface is completed for printing, also will through low-temperature bake, after grid line solidification, then turn-over carries out the printing of shady face, which increases the complexity of technique.
Summary of the invention
The purpose of this utility model is to overcome Problems existing in existing solar battery technology, provides a kind of heterojunction solar battery, and its solar energy transfer ratio is high, low cost of manufacture.
For achieving the above object, the utility model is by the following technical solutions:
A kind of heterojunction solar battery, it comprises: n type single crystal silicon sheet; Be located at the intrinsic amorphous silicon passivation layer of n type single crystal silicon sheet sensitive surface and shady face; Be located at the P type doped amorphous silicon layer on n type single crystal silicon sheet sensitive surface intrinsic amorphous silicon passivation layer; Be located at the N-type doped amorphous silicon layer on n type single crystal silicon sheet shady face intrinsic amorphous silicon passivation layer; Be located at the transparent conductive film layer on P type doped amorphous silicon layer; Be located at the transparent conductive film layer on N-type doped amorphous silicon layer; Be located at the copper gate line electrode on the transparent conductive film layer of P type doped amorphous silicon layer; Be located at the copper gate line electrode on the transparent conductive film layer of N-type doped amorphous silicon layer; Be located at the plating tin layers at the copper gate line electrode top on the transparent conductive film layer of P type doped amorphous silicon layer; Be located at the plating tin layers at the copper gate line electrode top on the transparent conductive film layer of N-type doped amorphous silicon layer.
Preferably, described electrotinning layer thickness is 1.0 μm ~ 6.0 μm.
Preferably, the transmitance of described transparent conductive film layer is greater than 90%.
Preferably, on described P type doped amorphous silicon layer, the thickness of transparent conductive film layer is 80-100nm, and on N-type doped amorphous silicon layer, the thickness of transparent conductive film layer is 25-100nm.
Preferably, described transparent conductive film layer is graphene film layer or TCO transparent conductive film layer.
The utility model adopts above technical scheme, copper gate line electrode is made up of the plating tin layers of the layers of copper first deposited and rear deposition, tin layers covers the top of layers of copper, the deposition that therefore can realize layers of copper and tin layers is that the mode of working continuously completes in former and later two technique cell bodies of an equipment, simplifies technique; Can resist alkaline copper etching liquor based on copper chloride by depositing tin layers in layers of copper, and increase the adhesion with copper gate line electrode, tin layers also can play protection copper gate line electrode and help the effect of weldering simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is that the utility model is at the post-depositional structural representation of copper gate line electrode.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
As shown in Figure 1, the utility model discloses a kind of heterojunction solar battery, it comprises: n type single crystal silicon sheet 1; Be located at the intrinsic amorphous silicon passivation layer 2 of n type single crystal silicon sheet 1 sensitive surface and shady face; Be located at the P type doped amorphous silicon layer 3 on n type single crystal silicon sheet 1 sensitive surface intrinsic amorphous silicon passivation layer 2; Be located at the N-type doped amorphous silicon layer 4 on n type single crystal silicon sheet 1 shady face intrinsic amorphous silicon passivation layer 2; Be located at the transparent conductive film layer 5 on P type doped amorphous silicon layer 3 and N-type doped amorphous silicon layer 4; Be located at the copper gate line electrode 6 on the transparent conductive film layer 4 of P type doped amorphous silicon layer 3; Be located at the copper gate line electrode 6 on the transparent conductive film layer 5 of N-type doped amorphous silicon layer 4; The plating tin layers 7 of the surface coverage of described copper gate line electrode 6.
Wherein, described copper gate line electrode 6 is formed by plating mode, and the copper gate line electrode 6 be located on the transparent conductive film layer 5 of P type doped amorphous silicon layer 3 is once electroplate formation with the copper gate line electrode 6 be located on the transparent conductive film layer 5 of N-type doped amorphous silicon layer 4 simultaneously; Described copper gate line electrode 6 is formed by disposable successive sedimentation plating, and the utility model is first deposited copper, and then deposit tin, completes in former and later two technique cell bodies of an equipment in the mode of working continuously; The copper formed by plating, tin combination gate line electrode, its resistivity is about 2 × 10
-6ohmcm, the low order of magnitude of silver grating line electrode that general ratio is formed by silk screen printing, the live width of the metal grid lines electrode that the mode spilling grid line pattern by mask is plated can be further reduced to 40 μm, the silver grating line live width far below about 70 μm that current silk screen printing is formed.Along with the reduction of top electrode grid line width, the performance of cell piece can promote further.In addition, copper is low-valent metal, and it replaces silver as electrode, greatly can reduce the cost of manufacture of cell piece.The utility model can reach the successively successive sedimentation of electro-coppering and electrotinning, flow process, simple to operate, low for equipment requirements, therefore equipment investment cost is also corresponding can reduce a lot, and easily realizes automatic integratedization production.In the utility model, the transmitance of described transparent conductive film layer 5 is greater than 90%, and described transparent conductive film layer 5 is graphene film layer or TCO transparent conductive film layer.
As shown in Fig. 2 structure, the concrete manufacturing process of solar cell described in the utility model can be as follows:
Step 1: deposit one deck intrinsic amorphous silicon rete 2 (I-a-Si:H) respectively by PECVD (plasma enhanced chemical vapor deposition method) on the sensitive surface and shady face of n type single crystal silicon sheet 1;
Step 2: by PECVD method deposition P type doped amorphous silicon layer 3 (P-a-Si:H) on n type single crystal silicon sheet 1 sensitive surface intrinsic amorphous silicon passivation layer 2;
Step 3: by PECVD method deposited n-type doped amorphous silicon layer 4 (N-a-Si:H) on n type single crystal silicon sheet 1 shady face intrinsic amorphous silicon passivation layer 2 (I-a-Si:H);
Step 4: pass through the thick transparent conductive film layer 5 of PVD magnetron sputtering deposition one deck 80-100nm on P type doped amorphous silicon layer 4;
Step 5: pass through the thick transparent conductive film layer 5 of PVD magnetron sputtering deposition one deck 25-100nm on N-type doped amorphous silicon layer 3;
Step 6: respectively by passing through the thick seed layers of copper 9 of PVD magnetron sputtering deposition one deck 100-200nm on the transparent conductive film layer 5 on two sides;
Step 7: simultaneously stick resistance dry film 8 on two sides, and certain pattern is formed by methods such as exposure, developments on resistance dry film 8;
Step 8: adopt the mode of plated metal deposition once simultaneously to form copper gate line electrode 6 in the dry film pattern formed, covers layer of metal plating tin layers 7 at copper gate line electrode 6 upper surface subsequently again.
Step 9: utilize alkaline solution to remove the resistance dry film 8 on cell piece surface;
Step 10: utilize alkaline copper chloride solution etch away step 6 the seed layers of copper 9 that deposits, expose hyaline membrane conducting film 5.Formation like this structure as shown in Figure 1.
Adopt the solar battery sheet that above technique is obtained, its mode by plating forms the metal grid lines that electro-coppering combines with plating tin layers on cell piece surface, the lead-free and cadmium-free free-floride achieving solar cell is produced, relatively environmental protection, decrease the pollution to environment and destruction, and plating tin layers has very strong corrosion resistance and is easy to the feature of welding.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model patent; the any amendment done within all spirit in utility model and principle, equivalently to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (5)
1. a heterojunction solar battery, is characterized in that, comprising:
N type single crystal silicon sheet;
Be located at the intrinsic amorphous silicon passivation layer of n type single crystal silicon sheet sensitive surface and shady face;
Be located at the P type doped amorphous silicon layer on n type single crystal silicon sheet sensitive surface intrinsic amorphous silicon passivation layer;
Be located at the N-type doped amorphous silicon layer on n type single crystal silicon sheet shady face intrinsic amorphous silicon passivation layer;
Be located at the transparent conductive film layer on P type doped amorphous silicon layer;
Be located at the transparent conductive film layer on N-type doped amorphous silicon layer;
Be located at the copper gate line electrode on the transparent conductive film layer of P type doped amorphous silicon layer;
Be located at the copper gate line electrode on the transparent conductive film layer of N-type doped amorphous silicon layer;
Be located at the plating tin layers at the copper gate line electrode top on the transparent conductive film layer of P type doped amorphous silicon layer;
Be located at the plating tin layers at the copper gate line electrode top on the transparent conductive film layer of N-type doped amorphous silicon layer.
2. heterojunction solar battery according to claim 1, is characterized in that: described electrotinning layer thickness is 1.0 μm ~ 6.0 μm.
3. heterojunction solar battery according to claim 1, is characterized in that: the transmitance of described transparent conductive film layer is greater than 90%.
4. heterojunction solar battery according to claim 1, is characterized in that: on described P type doped amorphous silicon layer, the thickness of transparent conductive film layer is 80-100nm, and on N-type doped amorphous silicon layer, the thickness of transparent conductive film layer is 25-100nm.
5. heterojunction solar battery according to claim 1, is characterized in that: described transparent conductive film layer is graphene film layer or TCO transparent conductive film layer.
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| CN201520862710.5U CN205231076U (en) | 2015-11-02 | 2015-11-02 | Heterojunction solar cell |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409959A (en) * | 2016-06-22 | 2017-02-15 | 苏州协鑫集成科技工业应用研究院有限公司 | Heterojunction solar cell and preparation method thereof |
| CN107482071A (en) * | 2017-07-24 | 2017-12-15 | 协鑫集成科技股份有限公司 | Heterojunction solar battery and preparation method thereof |
| CN109148616A (en) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | Silicon heterojunction solar battery and preparation method thereof |
| CN109166940A (en) * | 2017-06-19 | 2019-01-08 | 福建金石能源有限公司 | A kind of method for making its electrode of efficient heterojunction solar battery |
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN110112229A (en) * | 2019-04-29 | 2019-08-09 | 国家电投集团西安太阳能电力有限公司 | A kind of solar battery without thin grid |
| CN112054068A (en) * | 2020-07-30 | 2020-12-08 | 隆基绿能科技股份有限公司 | Silicon heterojunction solar cell and manufacturing method thereof |
| CN113451429A (en) * | 2021-06-30 | 2021-09-28 | 安徽华晟新能源科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN114256361A (en) * | 2021-12-03 | 2022-03-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
-
2015
- 2015-11-02 CN CN201520862710.5U patent/CN205231076U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409959A (en) * | 2016-06-22 | 2017-02-15 | 苏州协鑫集成科技工业应用研究院有限公司 | Heterojunction solar cell and preparation method thereof |
| CN109148616A (en) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | Silicon heterojunction solar battery and preparation method thereof |
| CN109166940A (en) * | 2017-06-19 | 2019-01-08 | 福建金石能源有限公司 | A kind of method for making its electrode of efficient heterojunction solar battery |
| CN107482071A (en) * | 2017-07-24 | 2017-12-15 | 协鑫集成科技股份有限公司 | Heterojunction solar battery and preparation method thereof |
| CN109860314A (en) * | 2018-10-29 | 2019-06-07 | 福建金石能源有限公司 | A kind of generating electricity on two sides imbrication monocrystalline silicon heterojunction solar cell and its mould group |
| CN110112229A (en) * | 2019-04-29 | 2019-08-09 | 国家电投集团西安太阳能电力有限公司 | A kind of solar battery without thin grid |
| CN112054068A (en) * | 2020-07-30 | 2020-12-08 | 隆基绿能科技股份有限公司 | Silicon heterojunction solar cell and manufacturing method thereof |
| CN113451429A (en) * | 2021-06-30 | 2021-09-28 | 安徽华晟新能源科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN114256361A (en) * | 2021-12-03 | 2022-03-29 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN114256361B (en) * | 2021-12-03 | 2023-06-27 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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Effective date of registration: 20160901 Address after: 362200, Jinjiang Economic Development Zone (Fujian, Li Yuan Road, No. 17), No. five Patentee after: Fujian Jinshi Energy Co., Ltd. Address before: 362000 Quanzhou, Licheng District, the streets of the village of Chang Tai Tong Community Patentee before: GS-SOLAR (CHINA) CO., LTD. |