CN102157572A - Crystalline silicon solar battery - Google Patents
Crystalline silicon solar battery Download PDFInfo
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- CN102157572A CN102157572A CN 201110056022 CN201110056022A CN102157572A CN 102157572 A CN102157572 A CN 102157572A CN 201110056022 CN201110056022 CN 201110056022 CN 201110056022 A CN201110056022 A CN 201110056022A CN 102157572 A CN102157572 A CN 102157572A
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Abstract
The invention discloses a crystalline silicon solar battery. The crystalline silicon solar battery comprises an Al electrode, a back ZnO-based thin film layer, a p-type Si substrate layer, an n-type Si diffusion layer, a front ZnO-based thin film layer and an Ag main electrode thick line in turn. The crystalline silicon solar battery has the advantages of high photoelectric conversion efficiency, high stability, simple process, and low production cost, and can improve the performance and prolong the service life of the crystalline silicon solar battery.
Description
Technical field
The present invention relates to solar cell, relate in particular to a kind of crystal silicon solar energy battery.
Background technology
Solar energy is inexhaustible, nexhaustible green regenerative energy sources.Solar power generation is the new forms of energy industry that countries in the world are given special assistance to, and photovoltaic generation industry in the world's was all with the rapid growth of 30% speed in recent years.Global solar battery production capacity reached 12GW in 2010, and wherein crystal silicon solar energy battery surpasses 9GW, accounts for more than 3/4ths of whole market.The photoelectric conversion efficiency average out to about 17% of present crystal silicon solar energy battery, photovoltaic generation cost are 1.3～2.0 yuan/degree, and with respect to the civilian electricity price lattice, its cost is still too high, is difficult to generate electricity by way of merging two or more grid systems.Further reduce the solar cell power generation cost, effective method is no more than improving the conversion efficiency of battery.It is calculated that the every raising 1% of battery efficiency is equivalent to cost of electricity-generating and reduces by 7%.Compare with theoretical limit efficient, present crystal silicon solar energy battery efficient also has very big room for promotion.
Existing crystal silicon solar energy battery structure is relative with technological process simple.The basic structure of battery front side is: deposit SiN with the PECVD method on n type Si diffusion layer
xFilm is an antireflection layer, and Si is played passivation; Form the Ag grid electrode with silk screen print method again, be electrode before the battery.Solar cell has the requirement of two aspects to preceding electrode: one, can not block incident light and enter p-n junction to guarantee most of incident light, the covering surfaces of electrode amasss about 6～10% before the aperture plate at present, the effective area of solar cell is reduced, thereby conversion efficiency reduces, if further improve utilization of incident light, then need to reduce the size and the density of the preceding electrode of aperture plate; They are two years old, to sufficient collection be arranged to photo-generated carrier, use the result of the preceding electrode of aperture plate to be, photo-generated carrier must be done transverse movement on the p-n junction top layer, this has brought extra series resistance, has increased Dian – hole-recombination rate, and short circuit current and fill factor, curve factor are descended, if further improve the collection efficiency of charge carrier, then need to increase the size and the density of the preceding electrode of aperture plate.This is the requirement of two mutual contradictions, has greatly restricted the raising of crystal silicon solar energy battery photoelectric conversion efficiency.
The technology of cell backside is very simple, directly aluminium paste is printed on the whole back side, forms the battery back electrode behind the sintering.Because the silicon chip surface of cell backside does not have passivation, have a large amount of defect states to exist, so Dian – hole is very high to recombination rate, has reduced the photoelectric conversion efficiency of battery, becomes one of important bottleneck that influences battery performance.Backside passivation layer has important effect for increase battery efficiency, lifting battery performance.Thermal oxidation SiO traditionally
2Can carry out passivation to silicon face, but thermal oxidation SiO
2Be difficult to carry out the single face growth, can exert an influence, reduce device performance battery front side.SiN
xFilm can be used for the passivation to silicon, when still this film being applied to passivating back, owing to there be " ghost effect " (Parasitic Effect), can reduce Solar cell performance.Also the someone studies and uses Al
2O
3Film carries out passivating back, but still has " ghost effect ".And, SiO
2, SiN
x, Al
2O
3All be insulating material, can not conduct electricity, thereby can increase the series resistance of battery, limited its passivation.Thereby cell backside passivation layer technology still is an outstanding question so far.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, be to increase the photoelectric conversion efficiency of battery, promote battery performance and a kind of novel crystal silicon solar cell is provided.
Crystal silicon solar energy battery of the present invention comprises Al electrode, back side zno-based thin layer, p type Si base layer, n type Si diffusion layer, front zno-based thin layer and Ag main electrode thick line successively.
Among the present invention, described front zno-based thin layer and back side zno-based thin layer are ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film.
Above-mentioned ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film can the H doping or H and B, Al, Ga, In, Sc, Y, Si, Ge, Sn, Ti, Zr, V, Nb, Cr, Mo, W, F, Cl, I, Ce, Dy and Er in the common formed transparent conductive film that mixes of one or more elements.
Among the present invention, described front zno-based thin layer resistivity is 10
– 3～10
– 5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.Described back side zno-based thin layer resistivity is 10
– 1～10
– 5Ω cm, thickness are 10～5000 nanometers.
Among the present invention, described Al electrode is wire electrode or point-like electrode.
The beneficial effect that the present invention compared with prior art has is:
1) on n type Si diffusion layer, directly deposit front zno-based thin layer, be transparent conductive film, can be simultaneously as electrode, antireflection layer and passivation layer before the battery.One, front zno-based thin layer as battery before electrode, substitute existing metal grid mesh electrode, thereby make the front of entire cell all become effective light-receiving area, reach the maximization of incident light utilance, photo-generated carrier need not be done transverse movement on the p-n junction top layer more simultaneously, improves its collection efficiency greatly, this scheme has solved the shortcoming of the preceding electrode of above-mentioned aperture plate metal fully, can significantly increase battery conversion efficiency; Its two, front zno-based thin layer is as antireflective coating, and has significant silicon face passivation and body passivation, thereby can be used as antireflection layer and passivation layer, substitutes SiN fully
xFilm, its reflection preventing ability and inactivating performance all are better than SiN
xFilm can improve the short circuit current and the open circuit voltage of battery, promotes battery performance; Its three, adopt front zno-based thin layer to substitute antireflective coating SiN in the present preparation flow
xWith front electrode two step process, can reach the integrated of antireflective coating and preceding electrode, significantly reduce product cost.
2) on p type Si base layer, directly deposit back side zno-based thin layer, can be used as passivation layer.One, the zno-based film is used for backside passivation layer, can effectively eliminate the silicon face attitude and the volume defect attitude of cell backside, good passivation effect, technology is simple, can reduce Dian – hole-recombination rate significantly, increases battery conversion efficiency; Its two because the introducing of zno-based film backside passivation layer, the cell backside silicon face has interface clearly, can improve the internal reflection rate of light, forms secondary and absorbs, and further increases the photoelectric conversion efficiency of battery; Its three, the zno-based thin layer has high conductivity, conducts electricity very well, and can not increase the series resistance of battery, helps promoting battery performance.
3) zno-based thin layer in front can be identical film with back side zno-based thin layer, can adopt with two-sided being coated with simultaneously of a kind of membrane deposition method to form, and technology maturation, technology is simple, and cost is low, the yields height.
4) adopt the needed production line of this novel crystal silicon solar cell, can need not to use PECVD and screen printing technique, compare, can significantly reduce production costs with existing technology.
5) compare with existing crystal silicon solar energy battery, this crystal silicon solar energy battery technology is simple, and photoelectric conversion efficiency significantly increases, and battery performance and stability are high, long service life.
Description of drawings
Fig. 1 is the structural representation of crystal silicon solar energy battery of the present invention.
Embodiment
As shown in Figure 1, crystal silicon solar energy battery of the present invention comprises Al electrode 1, back side zno-based thin layer 2, p type Si base layer 3, n type Si diffusion layer 4, front zno-based thin layer 5 and Ag main electrode thick line 6 successively.
Described front zno-based thin layer 5 and back side zno-based thin layer 2 comprise ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film, and formed transparent conductive film mixes for one or more elements among H doping or H and B, Al, Ga, In, Sc, Y, Si, Ge, Sn, Ti, Zr, V, Nb, Cr, Mo, W, F, Cl, I, Ce, Dy or the Er are common.
Described front zno-based thin layer 5 resistivity are 10
– 3～10
– 5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.Described back side zno-based thin layer 2 resistivity are 10
– 1～10
– 5Ω cm, thickness are 10～5000 nanometers.
Described Al electrode 1 is wire electrode or point-like electrode.
Embodiment 1:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize magnetically controlled sputter method, the common ZnO transparent conductive film that mixes of deposition H and Nb is front zno-based thin layer 5 on n type Si diffusion layer 4, and the common ZnO transparent conductive film that mixes of deposition H and Ga is back side zno-based thin layer 2 on p type Si base layer 3; Utilize method of evaporating vacuum evaporation Ag main electrode thick line 6 and Al electrode 1 respectively, adopt the mask technology during Ag main electrode thick line 6 depositions, earlier with the 2 etching perforates of back side zno-based thin layer, Al electrode 1 forms the point-like electrode before Al electrode 1 deposition.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 18 ~ 21%.
Embodiment 2:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize the CVD method, on n type Si diffusion layer 4 and p type Si base layer 3, two-sided H and the common ZnO transparent conductive film that mixes of Al of depositing simultaneously forms front zno-based thin layer 5 and back side zno-based thin layer 2, adopts the mask technology during back side zno-based thin layer 2 depositions; And then, adopting the mask technology during Ag main electrode thick line 6 depositions with method of evaporating difference vacuum evaporation Ag main electrode thick line 6 and Al electrode 1, Al electrode 1 forms wire electrode.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 18 ~ 22%.
Embodiment 3:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize magnetically controlled sputter method, on n type Si diffusion layer 4 and p type Si base layer 3, two-sided H and the common ZnMgO transparent conductive film that mixes of Ga of depositing simultaneously forms front zno-based thin layer 5 and back side zno-based thin layer 2, adopts the mask technology during back side zno-based thin layer 2 depositions; And then, adopting the mask technology during Ag main electrode thick line 6 depositions with method of evaporating difference vacuum evaporation Ag main electrode thick line 6 and Al electrode 1, Al electrode 1 forms wire electrode.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 19 ~ 23%.
Claims (6)
1. crystal silicon solar energy battery is characterized in that comprising successively Al electrode (1), back side zno-based thin layer (2), p type Si base layer (3), n type Si diffusion layer (4), front zno-based thin layer (5) and Ag main electrode thick line (6).
2. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described front zno-based thin layer (5) and back side zno-based thin layer (2) are ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film.
3. by the described crystal silicon solar energy battery of claim 2, it is characterized in that described ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film are the H doping or are the formed transparent conductive film of the common doping of one or more elements among H and B, Al, Ga, In, Sc, Y, Si, Ge, Sn, Ti, Zr, V, Nb, Cr, Mo, W, F, Cl, I, Ce, Dy and the Er.
4. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described front zno-based thin layer (5) resistivity is 10
– 3～10
– 5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.
5. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described back side zno-based thin layer (2) resistivity is 10
– 1～10
– 5Ω cm, thickness are 10～5000 nanometers.
6. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described Al electrode (1) is wire electrode or point-like electrode.
Priority Applications (1)
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|---|---|---|---|
| CN 201110056022 CN102157572A (en) | 2011-03-09 | 2011-03-09 | Crystalline silicon solar battery |
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|---|---|---|---|
| CN 201110056022 CN102157572A (en) | 2011-03-09 | 2011-03-09 | Crystalline silicon solar battery |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426876A (en) * | 2011-11-18 | 2012-04-25 | 安徽康蓝光电股份有限公司 | H doped FZO transparent conductive film and preparation method thereof |
| CN103137718A (en) * | 2011-11-24 | 2013-06-05 | 绿阳光电股份有限公司 | Solar cell module and method for manufacturing same |
| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN103746007A (en) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | Passivation layer of P-type crystalline silicon solar cell and passivation technology for passivation layer |
| CN106340549A (en) * | 2016-10-27 | 2017-01-18 | 中山大学 | Interdigital back contact solar cell with three output ends |
| CN106910792A (en) * | 2017-05-09 | 2017-06-30 | 无锡赛晶太阳能有限公司 | A kind of multi-crystal silicon film solar battery |
Citations (4)
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| KR20090011519A (en) * | 2007-07-26 | 2009-02-02 | 주성엔지니어링(주) | Crystalline silicon solar cell and manufacturing method and system thereof |
| CN101431127A (en) * | 2008-12-02 | 2009-05-13 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
| CN101567395A (en) * | 2009-05-26 | 2009-10-28 | 中国科学院上海硅酸盐研究所 | Surface-texturing n-type ZnO-based transparent conductive film and preparation method thereof |
| US20110017288A1 (en) * | 2009-07-21 | 2011-01-27 | Samsung Electro-Mechanics Co., Ltd. | Thin film type solar cell and method of manufacturing the same |
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2011
- 2011-03-09 CN CN 201110056022 patent/CN102157572A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20090011519A (en) * | 2007-07-26 | 2009-02-02 | 주성엔지니어링(주) | Crystalline silicon solar cell and manufacturing method and system thereof |
| CN101431127A (en) * | 2008-12-02 | 2009-05-13 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
| CN101567395A (en) * | 2009-05-26 | 2009-10-28 | 中国科学院上海硅酸盐研究所 | Surface-texturing n-type ZnO-based transparent conductive film and preparation method thereof |
| US20110017288A1 (en) * | 2009-07-21 | 2011-01-27 | Samsung Electro-Mechanics Co., Ltd. | Thin film type solar cell and method of manufacturing the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102426876A (en) * | 2011-11-18 | 2012-04-25 | 安徽康蓝光电股份有限公司 | H doped FZO transparent conductive film and preparation method thereof |
| CN103137718A (en) * | 2011-11-24 | 2013-06-05 | 绿阳光电股份有限公司 | Solar cell module and method for manufacturing same |
| CN103390675A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN103746007A (en) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | Passivation layer of P-type crystalline silicon solar cell and passivation technology for passivation layer |
| CN106340549A (en) * | 2016-10-27 | 2017-01-18 | 中山大学 | Interdigital back contact solar cell with three output ends |
| CN106910792A (en) * | 2017-05-09 | 2017-06-30 | 无锡赛晶太阳能有限公司 | A kind of multi-crystal silicon film solar battery |
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Application publication date: 20110817 |