CN204946910U - A kind of back contacts heterojunction monocrystaline silicon solar cell - Google Patents
A kind of back contacts heterojunction monocrystaline silicon solar cell Download PDFInfo
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- CN204946910U CN204946910U CN201520667111.8U CN201520667111U CN204946910U CN 204946910 U CN204946910 U CN 204946910U CN 201520667111 U CN201520667111 U CN 201520667111U CN 204946910 U CN204946910 U CN 204946910U
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- back side
- solar cell
- passivation layer
- base stage
- heterojunction
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model provides a kind of back contacts heterojunction monocrystaline silicon solar cell, belongs to solar-photovoltaic technology field.This battery: single crystal silicon substrate, front passivation layer, front-side antireflective layer, backside passivation layer, back side base stage, back side base stage contact electrode, back side emitter pole, back side emitter pole contact electrode, back protection film.Relative to conventional crystalline silicon battery, the utility model effectively prevent the electrode Problem of Shading of solar battery front side, while reduction metal electrode use amount, improve short circuit current; On the other hand, the excellent passivation effect of hetero-junction solar cell can effectively improve minority carrier life time and open circuit voltage.The combination of heterojunction and back contacts technology effectively improves the conversion efficiency of solar cell.Meanwhile, relative to traditional heterojunction and back contact solar cell, the method that the utility model realizes is more simple, and equipment investment is lower, is suitable for the requirement of producing in enormous quantities.
Description
Technical field
The utility model belongs to solar-photovoltaic technology field, is specifically related to a kind of back contacts heterojunction monocrystaline silicon solar cell.
Background technology
Back contacts technology and heteroj unction technologies are two kinds of monocrystaline silicon solar cell technology that can obtain high conversion efficiency respectively.In back contact solar cell, battery front side is without any distribution of electrodes, emitter and base stage cross arrangement are in cell backside, collect the photo-generated carrier that crystalline silicon photovoltaic effect produces respectively, because battery front side does not have metal electrode grid line to block the optical loss of generation, effectively can increase the short circuit current of cell piece, thus improve the photoelectric conversion efficiency of solar cell.In heterojunction solar battery, insert one deck intrinsic amorphous silicon in P-type non-crystalline silicon or between N-type amorphous silicon and monocrystal silicon substrate, effectively improve the passivation effect of monocrystalline silicon surface, greatly improve minority carrier lifetime, high open circuit voltage can be obtained, thus improve conversion efficiency; And because heteroj unction technologies adopts low temperature process, the steps such as the diffusion of conventional crystalline silicon battery, etching, dephosphorization silex glass can be saved, greatly reduce complexity and the uncertainty of technique.But for traditional hetero-junction solar cell, the light absorption due to its front surface is still limited by the impact of surface electrode, effectively cannot improve short circuit current; And traditional back contact battery due to minority diffusion length longer, the few son of photoproduction is easily fallen by compound before arrival back of the body interface, therefore needs effectively to improve surface passivation effect and minority carrier life time.These all constrain their further raisings as high performance solar batteries.
Summary of the invention
The utility model is for above problem, provide the simple high performance solar batteries design of a kind of structure, effectively can overcome conventional crystalline silicon solar cell, traditional heterojunction solar cell and conventional back contact technology defect separately, combine respective advantage, on the basis of removing surface electrode realization raising short circuit current, effectively improve the passivation effect on surface, reduce the surface recombination of few son, extend the life-span of the few son of photoproduction, substantially increase the photoelectric conversion efficiency of solar cell.
The utility model realizes above-mentioned effect by following technical solution:
A kind of back contacts heterojunction monocrystaline silicon solar cell, comprising: single crystal silicon substrate, front passivation layer, front-side antireflective layer, backside passivation layer, back side base stage, back side base stage contact electrode, back side emitter pole, back side emitter pole contact electrode, back protection film.
Front passivation layer and front-side antireflective layer are deposited on the front of single crystal silicon substrate successively, first deposit backside passivation layer at the back side of single crystal silicon substrate; Passivation layer surface alternating growth back side base stage and back side emitter pole overleaf, and back protection film; Base surface growth back side base stage contact electrode overleaf, overleaf emitter surface growth back side emitter pole contact electrode; Protective film is between two adjacent touched electrode and cover bottom section, comprises the open area between back side base stage and back side emitter pole.
Described single crystal silicon substrate is n type single crystal silicon sheet or p type single crystal silicon sheet.
Described monocrystalline silicon front passivation layer is: the combination of the front electric field layer that oxide, nitride, amorphous silicon, employing ion injection method are formed, the front electric field layer adopting method of diffusion to be formed or above-mentioned different materials; Front passivation layer film thickness is 0.5 ~ 30nm,
Described front-side antireflective layer is: the combination of oxide, nitride, TCO or above-mentioned different materials, and the thickness of front-side antireflective layer film film is 30 ~ 300nm.
Described backside passivation layer is the combination of one or more thin-film materials following: oxide, nitride, amorphous silicon or amorphous silicon alloy.
Described back-protective rete is the combination of one or more thin-film materials following: oxide, nitride, amorphous silicon or amorphous silicon alloy.
Described backing electrode material is the combination of one or more thin-film materials following: metal, TCO.
The invention has the beneficial effects as follows, the utility model effectively prevent the electrode Problem of Shading of solar battery front side, improves short circuit current, thus improve battery conversion efficiency while reduction metal electrode use amount; On the other hand, the excellent passivation effect of hetero-junction solar cell can effectively improve minority carrier life time and open circuit voltage, further increases the conversion efficiency of solar cell.Meanwhile, relative to traditional heterojunction and back contact solar cell, the method that the utility model realizes is more simple, and equipment investment is lower, is suitable for the requirement of producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the utility model solar battery structure front view;
Wherein, 1 single crystal silicon substrate, 2 front passivation layers, 3 front-side antireflective layers, 4 backside passivation layer, 5 back side base stages, 6 back side base electrodes, 7 back side emitter poles, 8 back side emitter pole electrodes, 9 back protection films.
Embodiment
The structure of the solar cell of the utility model design comprises as shown in Figure 1: single crystal silicon substrate 1, front passivation layer 2, front-side antireflective layer 3; backside passivation layer 4, back side base stage 5, back side base stage contact electrode 6; back side emitter pole 7, back side emitter pole contact electrode 8, back protection film 9.
Deposit front passivation layer 2 and front-side antireflective film 3 in the front of single crystal silicon substrate 1 successively, first deposit backside passivation layer 4 at the back side of single crystal silicon substrate 1; Passivation layer 4 surperficial alternating growth back side base stage 5 and back side emitter pole 7 overleaf, and back protection film 9; Base stage 5 superficial growth back side base stage contact electrode 6 overleaf, overleaf emitter 7 superficial growth back side emitter pole contact electrode 8.Back-protective rete 9 is between two adjacent touched electrode and cover bottom section, comprises the open area between back side emitter pole 7 and back side base stage 5.
Wherein front passivation layer 2 and front-side antireflective film 3 can be prepared before matrix back process completes, also can overleaf technique complete after preparation.The sedimentary sequence of back protection film 9, back side base stage 5 and back side emitter pole 7 can be intercoursed.Protective film should cover bottom section between the two adjacent touched electrode, comprises the open area between emitter and base stage.
Described single crystal silicon substrate 1 is n type single crystal silicon sheet or p type single crystal silicon sheet, and its resistivity is 0.5 ~ 50 Ω cm, and its thickness is 50 ~ 500 μm.
Described monocrystalline silicon front passivation layer 2 is made up of hydrogenated silicon oxide H-SiO2, and front passivation layer film thickness is 0.5 ~ 30nm, is prepared by PECVD.
Described front-side antireflective layer 3 is made up of silicon nitride, and the thickness of front-side antireflective layer film is 30 ~ 300nm, is prepared by PECVD.
Described backside passivation layer 4 is intrinsic amorphous silicon i-a-Si.Passivating back layer thickness is 0.5 ~ 20nm, is prepared by PECVD.
Described back side base stage 5 and back side emitter pole 7 are that N-type and P-type non-crystalline silicon film are formed, and thickness 1-20nm, is formed by PECVD technology plated film, and p type impurity doping can by passing into borine (B
2h
6) gas realization, gas doping concentration [B
2h
6]/[SiH
4] control in 500 ~ 5000ppm scope; N-type impurity doping can by passing into phosphine (PH
3) gas realization, gas doping concentration [PH
3]/[SiH
4] control to control in 50 ~ 500ppm scope in doping content.
Described back side base stage contact electrode 6 and back side emitter pole contact electrode 8 are the combination of one or more thin-film materials following: metal, TCO, and use PVD, IBD or electric plating method to prepare, thickness is 1-100 μm.
Described back-protective rete 9 is made up of SiO2 or silicon nitride, is prepared by PECVD technology, thickness 5-100nm.
The preparation method of this novel solar battery is specific as follows:
1) monocrystalline silicon cleans, goes damage layer, making herbs into wool;
2) formation of monocrystalline silicon front passivation layer and front-side antireflective layer plated film;
3) monocrystalline silicon backside passivation layer plated film;
4) mask technique plated film formation P-type non-crystalline silicon pattern is overleaf adopted;
5) mask technique plated film formation N-type amorphous silicon pattern is overleaf adopted;
6) mask technique plated film formation diaphragm pattern is overleaf adopted;
7) electroplating technology is adopted to form the contact electrode of emitter and base stage overleaf.
Above-described is only preferred implementation of the present utility model; it should be pointed out that for the person of ordinary skill of the art, under the prerequisite not departing from the utility model creation design; can also make some distortion and improvement, these all belong to protection range of the present utility model.
Claims (7)
1. a back contacts heterojunction monocrystaline silicon solar cell, it is characterized in that this back contacts heterojunction monocrystaline silicon solar cell comprises: single crystal silicon substrate, front passivation layer, front-side antireflective layer, backside passivation layer, back side base stage, back side base stage contact electrode, back side emitter pole, back side emitter pole contact electrode and back protection film;
Front passivation layer and front-side antireflective layer are deposited on the front of single crystal silicon substrate successively, first deposit backside passivation layer at the back side of single crystal silicon substrate; Passivation layer surface alternating growth back side base stage and back side emitter pole overleaf, and back protection film; Base surface growth back side base stage contact electrode overleaf, overleaf emitter surface growth back side emitter pole contact electrode; Back-protective rete is between two adjacent touched electrode and cover bottom section, comprises the open area between back side emitter pole and back side base stage.
2. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that described single crystal silicon substrate is n type single crystal silicon sheet or p type single crystal silicon sheet.
3. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that front passivation layer film thickness is 0.5 ~ 30nm.
4. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that the thickness of front-side antireflective layer film film is 30 ~ 300nm.
5. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that the thickness of backside passivation layer is 0.5 ~ 20nm.
6. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that described back-protective thicknesses of layers is 5 ~ 100nm.
7. a kind of back contacts heterojunction monocrystaline silicon solar cell according to claim 1, is characterized in that described backing electrode material thickness is 1 ~ 100 μm.
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| CN201520667111.8U CN204946910U (en) | 2015-08-31 | 2015-08-31 | A kind of back contacts heterojunction monocrystaline silicon solar cell |
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| CN201520667111.8U CN204946910U (en) | 2015-08-31 | 2015-08-31 | A kind of back contacts heterojunction monocrystaline silicon solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615775A (en) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery |
| WO2019119817A1 (en) * | 2017-12-21 | 2019-06-27 | 君泰创新（北京）科技有限公司 | Heterjunction solar cell and preparation method therefor |
| WO2019242550A1 (en) * | 2018-06-21 | 2019-12-26 | 君泰创新（北京）科技有限公司 | Solar cell and method for manufacturing same |
| CN114914321A (en) * | 2022-06-13 | 2022-08-16 | 南通市乐能电力有限公司 | N-type cell for photovoltaic panel |
-
2015
- 2015-08-31 CN CN201520667111.8U patent/CN204946910U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019119817A1 (en) * | 2017-12-21 | 2019-06-27 | 君泰创新（北京）科技有限公司 | Heterjunction solar cell and preparation method therefor |
| WO2019242550A1 (en) * | 2018-06-21 | 2019-12-26 | 君泰创新（北京）科技有限公司 | Solar cell and method for manufacturing same |
| CN108615775A (en) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery |
| CN108615775B (en) * | 2018-07-03 | 2024-01-30 | 黄河水电光伏产业技术有限公司 | Interdigital back contact heterojunction monocrystalline silicon battery |
| CN114914321A (en) * | 2022-06-13 | 2022-08-16 | 南通市乐能电力有限公司 | N-type cell for photovoltaic panel |
| CN114914321B (en) * | 2022-06-13 | 2024-02-06 | 南通市乐能电力有限公司 | N-type battery piece for photovoltaic panel |
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