CN108615775B - Interdigital back contact heterojunction monocrystalline silicon battery - Google Patents
Interdigital back contact heterojunction monocrystalline silicon battery Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 58
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 79
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910000979 O alloy Inorganic materials 0.000 claims abstract description 15
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000000969 carrier Substances 0.000 abstract description 9
- 230000031700 light absorption Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an interdigital back contact heterojunction monocrystalline silicon battery, which comprises: an N-type monocrystalline silicon substrate having a front surface and a back surface opposite to each other; doped N arranged on the front surface of N-type monocrystalline silicon substrate + A layer and a front side N-type amorphous silicon layer; the P-type amorphous silicon layer and the back N-type amorphous silicon layer are arranged on the back of the N-type monocrystalline silicon substrate at intervals. The interdigital back contact heterojunction monocrystalline silicon battery provided by the invention has the advantages that the thickness of the front N-type amorphous silicon layer of the conventional back contact heterojunction N-type monocrystalline silicon battery is reduced, and the lightly doped N is arranged below the amorphous silicon-oxygen alloy layer + The layer can reduce light absorption and light loss of the N-type amorphous silicon layer and can utilize N + The layer realizes a partial field passivation function, so that the photoelectric conversion efficiency of the battery is improved; at the same time N + The layers can also provide lateral low resistance conductive paths for photo-generated carriers, thereby reducing series resistance losses and improving the short circuit current, fill factor and conversion efficiency of the cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an interdigital back contact heterojunction monocrystalline silicon cell.
Background
The crystalline silicon solar cell has the characteristics of high conversion efficiency, good working stability, long working life, mature manufacturing technology and the like, and is the dominant force of the current solar photovoltaic market. Compared with the P-type monocrystalline silicon material doped with boron, the P-type monocrystalline silicon material doped with phosphorus has extremely low boron content, the photoinduced attenuation caused by boron oxide is negligible, the capturing capability of some metal impurities in the N-type silicon material to minority carrier holes is lower than that of impurities in the P-type silicon material, and the N-type silicon has higher minority carrier lifetime than the P-type silicon at the same doping concentration. These characteristics provide the potential long life and high efficiency advantages of N-type silicon cells, which have become the direction of development of high efficiency crystalline silicon solar cells in the future.
The interdigital back contact (Interdigitated Back Contact, IBC for short) battery based on N-type monocrystalline silicon substrate has no electrode distribution on the front surface, the emitter and the base are alternately arranged on the back surface of the battery, and photo-generated carriers generated by the crystalline silicon photovoltaic effect are respectively collected. Amorphous silicon (a-Si: H)/N type monocrystalline silicon (c-Si) heterojunction (Hetero-junctionwith Intrinsic Thin-layer, short for HIT) cells can passivate defects on the surface of monocrystalline silicon by inserting a layer of extremely thin intrinsic amorphous silicon between P-type amorphous silicon or N-type amorphous silicon and a monocrystalline silicon substrate by means of good surface passivation effect of intrinsic amorphous silicon (i-a-Si: H), so that surface recombination of interface states and monocrystalline silicon is greatly reduced, minority carrier lifetime is prolonged, and higher open-circuit voltage is obtained.
The N-type silicon back contact heterojunction solar cell (hereinafter referred to as HIBC cell) is a coupling cell of the heterojunction cell and the interdigital back contact cell, utilizes the excellent surface passivation performance of amorphous silicon, combines the structural advantage of no metal shielding on the front surface of the IBC structure, is compatible with the excellent characteristics of the two cells, has good optical and electrical properties, and has low processing temperature and good stability; the front surface of the battery is shielded from light without a grid line, so that the battery is ensured to have high short-circuit current (Isc); the front and back sides of the battery are provided with high-quality hydrogenated amorphous silicon passivation layers, so that the battery is ensured to have high open circuit voltage (Voc).
In general, the front surface of the interdigital back contact heterojunction N-type monocrystalline silicon battery adopts a structure that an N-type monocrystalline silicon matrix, intrinsic amorphous silicon, N-type amorphous silicon and an antireflection layer are sequentially overlapped from inside to outside, and the structure has the advantages that the intrinsic amorphous silicon provides excellent chemical passivation performance, and the N-type amorphous silicon realizes field passivation; the defect is that the generation rate of the photo-generated carriers on the front surface is high, the service life of the photo-generated carriers generated by the absorption of light by the amorphous silicon layer is very short, and effective photo-generated current is difficult to form, so that the short-wave effect is reduced and the optical loss is increased due to the reduction of the short-circuit current density; in addition, in order to reduce the reduction of the short-circuit current density of the battery caused by the light absorption of the amorphous silicon layer, the thicknesses of the front-side N-type amorphous silicon and the intrinsic amorphous silicon layers of the battery must be optimized and controlled when designing and manufacturing the back-contact heterojunction N-type monocrystalline silicon battery, and difficulty is brought to realizing excellent passivation performance and further improving the conversion efficiency of the battery.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an interdigital back contact heterojunction monocrystalline silicon battery, so as to reduce the light loss of the front surface of the battery in the prior art and improve the photoelectric conversion efficiency of the battery.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
the invention provides an interdigital back contact heterojunction monocrystalline silicon battery, which comprises:
an N-type monocrystalline silicon substrate having a front surface and a back surface opposite to each other;
doped N arranged on the front surface of the N-type monocrystalline silicon substrate + A layer and a front side N-type amorphous silicon layer;
and the P-type amorphous silicon layer and the back N-type amorphous silicon layer are arranged at intervals on the back of the N-type monocrystalline silicon substrate.
Preferably, the doping N + The layer is lightly doped N + A layer doped with N + The surface doping concentration of the layer is less than 1×10 18 cm -3 The diffusion depth is 0.2-1 μm.
Preferably, the thickness of the front N-type amorphous silicon layer is 1-10 nm.
Preferably, the single crystal silicon cell further comprises a doped N layer arranged on the substrate + And an amorphous silicon oxide front passivation layer between the layer and the front N-type amorphous silicon layer.
Preferably, the thickness of the amorphous silicon oxide front passivation layer is 1-10 nm, and the optical energy gap is larger than 2eV.
Preferably, the monocrystalline silicon battery further comprises an anti-reflection layer arranged on the surface of the front N-type amorphous silicon layer.
Preferably, the anti-reflection layer is one or a combination of two of oxide and nitride, and the thickness of the anti-reflection layer is 50-200 nm.
Preferably, the single crystal silicon battery further comprises a contact layer arranged on the P-type amorphous silicon layer and the back N-type amorphous silicon layer and an insulating isolation layer (10) arranged between the P-type amorphous silicon layer and the back N-type amorphous silicon layer.
Preferably, the contact layer is composed of a laminate of a transparent conductive film and a metal electrode, the transparent conductive film including tin-doped In 2 O 3 And aluminum doped ZnO, wherein the metal electrode is silver, copper or aluminum.
Preferably, the monocrystalline silicon battery further comprises an amorphous silicon-oxygen alloy back passivation layer arranged on the back surface of the N-type monocrystalline silicon substrate.
And at presentCompared with the prior art, the interdigital back contact heterojunction monocrystalline silicon battery provided by the invention has the advantages that the thickness of the front N-type amorphous silicon layer of the conventional back contact heterojunction N-type monocrystalline silicon battery is reduced, and the lightly doped N is arranged below the amorphous silicon-oxygen alloy layer + The layer can reduce light absorption and light loss of the N-type amorphous silicon layer and can utilize N + The layer realizes a partial field passivation function, so that the photoelectric conversion efficiency of the battery is improved; at the same time N + The layers can also provide lateral low resistance conductive paths for photo-generated carriers, thereby reducing series resistance losses and improving the short circuit current, fill factor and conversion efficiency of the cell.
In addition, the front surface of the battery adopts amorphous silicon-oxygen alloy with wider optical energy gap to replace an intrinsic amorphous silicon layer as a passivation layer, so that on one hand, the absorption of the passivation layer in a blue light area can be reduced, the light loss is reduced, the short-circuit current density of the battery is improved, and on the other hand, the surface defect density of the amorphous silicon-oxygen alloy is lower than that of the intrinsic amorphous silicon, and a more excellent interface passivation effect can be realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an interdigital back contact heterojunction single crystal silicon cell according to an embodiment of the present invention.
Detailed Description
The following detailed description of the technical solutions according to embodiments of the present invention will be given with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some examples of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to FIG. 1, an interdigital back contact is shown in accordance with an embodiment of the present inventionA heterojunction monocrystalline silicon cell comprising an N-type monocrystalline silicon substrate 1, wherein the N-type monocrystalline silicon substrate 1 has a front side and a back side opposite to each other; preparing single-sided lightly doped N on the front surface of an N-type monocrystalline silicon matrix 1 in sequence + Layer 2, amorphous silicon oxide alloy (a-SiOx: H) front passivation layer 3, front N-type amorphous silicon layer 4 and antireflection layer 5; preparing an amorphous silicon-oxygen alloy (a-SiOx: H) back passivation layer 6 on the back surface of the N-type monocrystalline silicon substrate 1; alternately depositing a P-type amorphous silicon layer 7 and a back N-type amorphous silicon layer 8 on the surface of the amorphous silicon-oxygen alloy back passivation layer 6; sequentially depositing a transparent conductive film and a metal film on the surfaces of the P-type amorphous silicon layer 7 and the back N-type amorphous silicon layer 8 respectively to form a contact layer 9; an insulating spacer 10 is deposited in the region between the P-type amorphous silicon layer 7 and the back N-type amorphous silicon layer 8.
By thinning the thickness of the front N-type amorphous silicon layer 4 of the back contact heterojunction N-type monocrystalline silicon battery, and arranging lightly doped N under the amorphous silicon-oxygen alloy layer + The layer can reduce light absorption and light loss of the N-type amorphous silicon layer 4 and utilize lightly doped N + The layer achieves a partial field passivation function while lightly doped N + The layer can also provide a transverse low-resistance conductive channel for photo-generated carriers, so that the series resistance loss is reduced, the filling factor and the conversion efficiency of the battery are improved, and the photoelectric conversion efficiency of the battery is improved.
In addition to the above, since the unit area of the back contact heterojunction N-type single crystal silicon cell tends to be large, the resistivity of the silicon substrate is high, photogenerated carriers generated on the front surface of the cell need to be transmitted for a long distance to reach the back surface of the cell to be collected, and the photogenerated carrier transmission causes a large series resistance loss, thereby resulting in a reduction of the filling factor. And lightly doped N + Layer 2 solves the problem well, lightly doped N + Layer 2 can provide a lateral low resistance conductive path for photo-generated carriers, thereby reducing series resistance losses and improving the short circuit current, fill factor and conversion efficiency of the cell.
Preferably, the thickness of the front N-type amorphous silicon layer 4 is 1-10 nm, and the doping N + Layer 2 is lightly doped N + A layer doped with N + The surface doping concentration of layer 2 is less than 1 x 10 18 cm -3 The diffusion depth is 0.2-1 μm. The front N-type amorphous silicon layer 4 with the thickness range and the doping N with the doping degree and the diffusion depth + And the layer 2 realizes the purposes of reducing light absorption and light loss of the N-type amorphous silicon layer and having good passivation effect.
Preferably, the thickness of the amorphous silicon oxide front passivation layer 3 is 1-10 nm, and the optical energy gap is larger than 2eV. The front surface of the battery in the embodiment adopts amorphous silicon-oxygen alloy with wider optical energy gap to replace an intrinsic amorphous silicon layer as a passivation layer, so that on one hand, the absorption of the passivation layer in a blue light area can be reduced, the light loss is reduced, the short-circuit current density of the battery is improved, and on the other hand, the surface defect density of the amorphous silicon-oxygen alloy is lower than that of the intrinsic amorphous silicon, and a more excellent interface passivation effect can be realized.
Likewise, the amorphous silicon alloy back passivation layer 6 on the back of the N-type monocrystalline silicon substrate 1 uses amorphous silicon alloy with wider optical energy gap to replace an intrinsic amorphous silicon layer as a passivation layer, the arrangement ensures the interface passivation effect on the back of the interdigital back contact heterojunction monocrystalline silicon battery, preferably, the thickness of the amorphous silicon alloy back passivation layer 6 is 1-10 nm, and the optical energy gap is larger than 2eV.
Preferably, the resistivity of the N-type monocrystalline silicon substrate 1 of the embodiment is 0.5-10Ω -cm, and the thickness is 100-300 μm;
the anti-reflection layer 5 is one or the combination of two of oxide and nitride, and the thickness of the anti-reflection layer 5 is 50-200 nm. The antireflection layer 5 of this thickness minimizes reflection loss and increases light transmittance, thereby improving the efficiency of the battery.
Referring to fig. 1, the p-type amorphous silicon layer 7 has a thickness of 10 to 100nm and a width of 100 to 1000 μm. Wherein the thickness of the back N-type amorphous silicon layer 8 is the same as the thickness of the P-type amorphous silicon layer 7, but the width thereof is smaller than the width of the P-type amorphous silicon layer 7.
The contact layer 9 may be composed of a transparent conductive film and a metal electrode laminate. The transparent conductive film comprises tin doped In 2 O 3 And aluminum doped ZnO (AZO) and the like, wherein the metal electrode is made of silver, copper or aluminum and the like. The contact layer 9 has a width of 10 to 300 μm.
Preferably, the insulating spacer layer 10 employs one or a combination of silicon dioxide, silicon nitride, aluminum oxide.
The interdigital back contact heterojunction monocrystalline silicon battery provided by the invention has the advantages that the thickness of the front N-type amorphous silicon layer of the conventional back contact heterojunction N-type monocrystalline silicon battery is reduced, and the lightly doped N is arranged below the amorphous silicon-oxygen alloy layer + The layer can reduce light absorption and light loss of the N-type amorphous silicon layer and can utilize N + The layer realizes a partial field passivation function, so that the photoelectric conversion efficiency of the battery is improved; at the same time N + The layers can also provide lateral low resistance conductive paths for photo-generated carriers, thereby reducing series resistance losses and improving the short circuit current, fill factor and conversion efficiency of the cell.
In addition, the front surface of the battery adopts amorphous silicon-oxygen alloy with wider optical energy gap to replace an intrinsic amorphous silicon layer as a passivation layer, so that on one hand, the absorption of the passivation layer in a blue light area can be reduced, the light loss is reduced, the short-circuit current density of the battery is improved, and on the other hand, the surface defect density of the amorphous silicon-oxygen alloy is lower than that of the intrinsic amorphous silicon, and a more excellent interface passivation effect can be realized.
Although the present invention has been shown and described with reference to certain embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
Claims (8)
1. An interdigital back contact heterojunction single crystal silicon cell, comprising:
an N-type monocrystalline silicon substrate (1), said N-type monocrystalline silicon substrate (1) having opposite front and back sides;
the doped N is arranged on the front surface of the N-type monocrystalline silicon substrate (1) + A layer (2) and a front N-type amorphous silicon layer (4), wherein the thickness of the front N-type amorphous silicon layer (4) is 1nm, and the doped N + Layer (2) is lightly doped N + A layer doped with N + The surface doping concentration of the layer (2) is less than 1×10 18 cm -3 The diffusion depth is 0.2-1 mu m;
and the P-type amorphous silicon layer (7) and the back N-type amorphous silicon layer (8) are arranged on the back of the N-type monocrystalline silicon substrate (1) at intervals.
2. The single crystal silicon cell of claim 1 further comprising a dopant N disposed in the single crystal silicon cell + And an amorphous silicon oxygen alloy front passivation layer (3) between the layer (2) and the front N-type amorphous silicon layer (4).
3. Single crystal silicon cell according to claim 2, characterized in that the thickness of the amorphous silicon oxide pre-passivation layer (3) is 1-10 nm, the optical energy gap of which is greater than 2eV.
4. A single crystal silicon cell according to claim 3, further comprising an anti-reflection layer (5) provided on the surface of the front-side N-type amorphous silicon layer (4).
5. The single crystal silicon cell according to claim 4, wherein the anti-reflection layer (5) is one or a combination of two of oxide and nitride, and the thickness of the anti-reflection layer (5) is 50-200 nm.
6. A single crystal silicon cell according to claim 3, further comprising a contact layer (9) provided on the P-type amorphous silicon layer (7) and the back-side N-type amorphous silicon layer (8) and an insulating isolation layer (10) provided between the P-type amorphous silicon layer (7) and the back-side N-type amorphous silicon layer (8).
7. Single crystal silicon cell according to claim 6, characterized In that the contact layer (9) consists of a stack of a transparent conductive film comprising tin doped In and a metal electrode 2 O 3 And aluminum doped ZnO, wherein the metal electrode is silver, copper or aluminum.
8. The monocrystalline silicon cell according to claim 7, further comprising an amorphous silicon oxygen alloy back passivation layer (6) provided on the back side of the N-type monocrystalline silicon substrate (1).
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