CN111435693A - Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof - Google Patents
Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN111435693A CN111435693A CN201811601967.XA CN201811601967A CN111435693A CN 111435693 A CN111435693 A CN 111435693A CN 201811601967 A CN201811601967 A CN 201811601967A CN 111435693 A CN111435693 A CN 111435693A
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- silicon
- crystalline silicon
- solar cell
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 227
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 161
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 150
- 239000010409 thin film Substances 0.000 claims description 79
- 239000013039 cover film Substances 0.000 claims description 60
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 36
- 229910003437 indium oxide Inorganic materials 0.000 claims description 31
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 28
- 239000011787 zinc oxide Substances 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000009977 dual effect Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 95
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 29
- 238000000576 coating method Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 238000001755 magnetron sputter deposition Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides an amorphous silicon/crystalline silicon heterojunction solar cell and a preparation method thereof, wherein the preparation method comprises the steps of preparing an amorphous silicon/crystalline silicon heterojunction structure, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure respectively comprise a central area and an edge area surrounding the central area; preparing a transparent conductive oxide film to cover the central region and expose at least the edge region of one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure; forming a metal electrode; and forming a covering film, wherein the covering film at least covers the exposed edge region. According to the invention, through the characteristics of chemical inertness and controllable optical refractive index of silicon nitride, silicon oxide and silicon oxynitride, the stability of the amorphous silicon/crystalline silicon heterojunction solar cell is maximized, and meanwhile, the antireflection effect is optimized, so that the dual purposes of improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell are achieved, and the amorphous silicon/crystalline silicon heterojunction solar cell has the advantages of low cost and high stability.
Description
Technical Field
The invention belongs to the field of amorphous silicon/crystalline silicon heterojunction solar cells, and relates to an amorphous silicon/crystalline silicon heterojunction solar cell and a preparation method thereof.
Background
The solar cell power generation has the characteristics of small regional difference, huge reserves, safety, no pollution, inexhaustible resources and the like, and is the dominant force of new energy and renewable energy technologies in the 21 st century. There are many types of solar cells, and currently, the solar cell made of silicon-based materials is the mainstream, including a crystalline silicon solar cell and a thin film silicon solar cell. The development direction of the solar cell mainly focuses on improving the efficiency, prolonging the service life and reducing the cost, the improvement of the service life and the photoelectric conversion efficiency not only can reduce the manufacturing cost of unit generated energy, but also can reduce the cost of installation and land occupation, and has great significance for promoting the realization of photovoltaic 'flat price surfing'.
An amorphous silicon/crystalline silicon heterojunction solar cell is a high-efficiency solar cell, called HITR (heterojunction with Intrinsic Thin-layer) or SHJ (silicon heterojunction junction) for short, the latter is frequently used in China, however, the existing amorphous silicon/crystalline silicon heterojunction solar cell often has attenuation signs, and the attenuation signs seriously influence the service life and the economic benefit of the amorphous silicon/crystalline silicon heterojunction solar cell.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide an amorphous silicon/crystalline silicon heterojunction solar cell and a manufacturing method thereof, which are used for prolonging the service life of the amorphous silicon/crystalline silicon heterojunction solar cell and improving economic benefits.
In order to achieve the above objects and other related objects, the present invention provides a method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell, comprising the steps of:
preparing an amorphous silicon/crystalline silicon heterojunction structure, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure respectively comprise a central area and an edge area surrounding the central area;
preparing a transparent conductive oxide film, wherein the transparent conductive oxide film covers the central area of the amorphous silicon/crystalline silicon heterojunction structure, and the transparent conductive oxide film at least exposes the edge area positioned on one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure;
forming a metal electrode on the transparent conductive oxide film;
forming a cover film, wherein the cover film at least covers the exposed edge region.
Optionally, the cover film includes one or a combination of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film.
Optionally, the preparation method of the cover film includes one or a combination of plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition, atomic layer deposition, sol-gel method, physical vapor deposition, infiltration, and chemical wet oxidation, and the temperature for preparing the cover film is not more than 250 ℃.
Optionally, the thickness of the cover film ranges from 10nm to 100 nm.
Optionally, the cover film further covers the surface of the transparent conductive oxide film, the surface of the metal electrode, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure.
Optionally, the thickness of the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure ranges from 5nm to 25 nm.
Optionally, the transparent conductive oxide film includes one or a combination of a tin-doped indium oxide film, an aluminum-doped indium oxide film, a tungsten-doped indium oxide film, a titanium-doped indium oxide film, a cesium-doped indium oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, and an aluminum-doped gallium zinc oxide film.
Optionally, the thickness of the transparent conductive oxide thin film ranges from 30nm to 200 nm.
Optionally, the preparation method of the metal electrode comprises one or a combination of screen printing, ink-jet printing, electroplating, electroless plating, physical vapor deposition and spraying, and the temperature for preparing the metal electrode is not more than 250 ℃.
The present invention also provides an amorphous silicon/crystalline silicon heterojunction solar cell, comprising:
the amorphous silicon/crystal silicon heterojunction structure comprises an upper surface and a lower surface which respectively comprise a central area and an edge area surrounding the central area;
the transparent conductive oxide film covers the central area of the amorphous silicon/crystalline silicon heterojunction structure, and at least exposes the edge area of one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure;
a metal electrode on the transparent conductive oxide film;
a cover film covering at least the exposed edge region.
Optionally, the cover film includes one or a combination of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film.
Optionally, the thickness of the cover film ranges from 10nm to 100 nm.
Optionally, the cover film further covers the surface of the transparent conductive oxide film, the surface of the metal electrode, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure.
Optionally, the thickness of the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure ranges from 5nm to 25 nm.
Optionally, the transparent conductive oxide film includes one or a combination of a tin-doped indium oxide film, an aluminum-doped indium oxide film, a tungsten-doped indium oxide film, a titanium-doped indium oxide film, a cesium-doped indium oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, and an aluminum-doped gallium zinc oxide film.
Optionally, the thickness of the transparent conductive oxide thin film ranges from 30nm to 200 nm.
Optionally, the width of the edge region ranges from 0.5mm to 1.5 mm.
As described above, according to the amorphous silicon/crystalline silicon heterojunction solar cell and the preparation method thereof, when the transparent conductive oxide thin films are prepared on the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure, the transparent conductive oxide thin film covers the central region of the amorphous silicon/crystalline silicon heterojunction structure, and the transparent conductive oxide thin film at least exposes the edge region of one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure, so that the transparent conductive oxide thin films can be completely isolated and not conducted with each other, thereby avoiding causing a cell short circuit and improving the filling factor of the solar cell; the exposed edge area is covered by the covering film, the stability of the amorphous silicon/crystalline silicon heterojunction solar cell is maximized by utilizing the chemical inertness of silicon nitride, silicon oxide and silicon oxynitride, and meanwhile, the antireflection effect of the amorphous silicon/crystalline silicon heterojunction solar cell is optimized by means of the characteristic that the optical refractive indexes of the silicon nitride, the silicon oxide and the silicon oxynitride are controllable, so that the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell is improved, the dual purposes of improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell are achieved, the advantages of low cost and high stability are achieved, and the solar cell has wide application prospect and economic value in the field of solar cell preparation.
Drawings
Fig. 1a is a schematic structural diagram of an amorphous silicon/crystalline silicon heterojunction solar cell formed by a reactive plasma deposition technique to prepare a transparent conductive oxide thin film in the prior art.
Fig. 1b shows a schematic structural diagram of an amorphous silicon/crystalline silicon heterojunction solar cell formed by preparing a transparent conductive oxide film by a magnetron sputtering coating technology in the prior art.
Fig. 2 is a flow chart of a process for fabricating an amorphous silicon/crystalline silicon heterojunction solar cell in the first embodiment.
Fig. 3 to fig. 6b are schematic structural diagrams showing steps of fabricating an amorphous silicon/crystalline silicon heterojunction solar cell in the first embodiment; wherein,
fig. 3 is a schematic structural diagram of a method for preparing an amorphous silicon/crystalline silicon heterojunction structure in the first embodiment.
Fig. 4a to 4c are schematic structural diagrams illustrating the preparation of a transparent conductive oxide thin film in the first embodiment.
Fig. 5 is a schematic structural diagram of a metal electrode according to the first embodiment.
Fig. 6a to 6b are schematic structural diagrams illustrating the preparation of a cover film in the first embodiment, wherein fig. 6a to 6b are further schematic structural diagrams illustrating an amorphous silicon/crystalline silicon heterojunction solar cell in the second embodiment.
Description of the element reference numerals
101N type monocrystalline silicon piece
102 intrinsic amorphous silicon thin film
103N type doped amorphous silicon film
104P type doped amorphous silicon film
105 transparent conductive oxide film
106 metal electrode
100 amorphous silicon/crystalline silicon heterojunction structure
110N type monocrystalline silicon piece
120 intrinsic amorphous silicon thin film
130N type doped amorphous silicon film
140P type doped amorphous silicon film
200 transparent conductive oxide film
300 metal electrode
400 cover film
Central area of A
Edge zone B
Detailed Description
In the prior art, the basic structure of an amorphous silicon/crystalline silicon heterojunction solar cell (SHJ) is shown in fig. 1a to 1 b. The amorphous silicon/crystalline silicon heterojunction solar cell takes an N-type monocrystalline silicon wafer 101 as a substrate, then a lamination of an intrinsic amorphous silicon film 102 and an N-type doped amorphous silicon film 103 is deposited on the upper surface of the N-type monocrystalline silicon wafer 101 by using methods such as Plasma Enhanced Chemical Vapor Deposition (PECVD), metal thermal catalysis chemical vapor deposition (Cat-CVD), Hot wire chemical vapor deposition (Hot-wire CVD) and the like, and a lamination of the intrinsic amorphous silicon film 102 and a P-type doped amorphous silicon film 104 is deposited on the lower surface of the N-type monocrystalline silicon wafer 101, so that amorphous silicon is formed on the upper surface and the lower surface of the N-type monocrystalline silicon wafer 101 to prepare an amorphous silicon/crystalline silicon heterojunction structure; then, transparent conductive oxide films 105 are respectively deposited on the N-type doped amorphous silicon film 103 and the P-type doped amorphous silicon film 104, and then metal electrodes 106 are manufactured by metallization technologies such as screen printing or electroplating, so that the amorphous silicon/crystalline silicon heterojunction solar cell with a symmetrical structure and capable of receiving light on both sides is formed.
In the amorphous silicon/crystalline silicon heterojunction solar cell, the amorphous silicon, i.e., the stacked layer formed by the intrinsic amorphous silicon thin film 102 and the N-type doped amorphous silicon thin film 103 or the stacked layer formed by the intrinsic amorphous silicon thin film 102 and the P-type doped amorphous silicon thin film 104, has a good passivation effect on the N-type monocrystalline silicon wafer 101, and can separate and collect photogenerated carriers, so that the microstructure and the photoelectric characteristics of the amorphous silicon are crucial to the photoelectric conversion efficiency and the stability of the amorphous silicon/crystalline silicon heterojunction solar cell.
However, since the amorphous silicon has a very thin thickness and a poor lateral conductivity in the amorphous silicon, it is necessary to deposit the transparent conductive oxide thin film 105 having a good conductivity on the upper surface of the amorphous silicon to enhance the carrier collection capability. Meanwhile, the transparent conductive oxide thin film 105 may also function as a surface antireflection film, a surface protection film, and the like.
There are many existing methods for preparing the transparent conductive oxide film 105, and the preparation of the transparent conductive oxide film 105 with low temperature and low damage is the key to obtain the amorphous silicon/crystalline silicon heterojunction solar cell with high efficiency. Currently, magnetron Sputtering (Sputtering) coating technology and Reactive Plasma Deposition (RPD) technology are two alternative technologies for commercially producing the transparent conductive oxide thin film 105. As described above, since the transparent conductive oxide thin film 105 functions as both a conductive layer and an anti-reflective layer, it is required in structural design that it covers the surface of the amorphous silicon as completely as possible, thereby sufficiently performing its dual functions of conductivity and anti-reflection. However, since the N-type monocrystalline silicon wafer 101 is thin (100 μm to 200 μm), the transparent conductive oxide film 105 is easily deposited on the upper surface, the lower surface and the side surface of the amorphous silicon/crystalline silicon heterojunction structure during the actual preparation process, so that the transparent conductive oxide film 105 is conducted with each other, thereby causing a cell short circuit and seriously affecting the fill factor of the solar cell. In order to avoid the transparent conductive oxide film 105 from being electrically connected up and down, it is common practice to partially shield the edges of the upper surface and/or the lower surface of the amorphous silicon during the preparation of the transparent conductive oxide film. According to the characteristics of the different coating methods adopted by the transparent conductive oxide thin film 105, the positions of the upper surface and/or the lower surface of the amorphous silicon, which are partially shielded, are distinguished. When the transparent conductive oxide film 105 is prepared using reactive plasma deposition techniques, edge shadowing is typically designed on the lower surface, as shown in FIG. 1 a; when the transparent conductive oxide film 105 is prepared using a magnetron sputtering coating technique, edge shielding is typically designed on the upper and lower surfaces, as shown in FIG. 1 b; thereby, the transparent conductive oxide thin film 105 can be prevented from being conducted with each other, and the short circuit of the battery can be prevented. However, the method also has disadvantages that, for example, the shielded amorphous silicon is exposed at the outermost layer, and the exposed amorphous silicon at the edge of the part can not only affect the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell, but also has a fatal influence on the stability of the amorphous silicon/crystalline silicon heterojunction solar cell.
The problem of severe attenuation of amorphous silicon thin film Solar Cells caused by the "S-W" effect causes great concern in the industry for the stability of amorphous silicon/crystalline silicon heterojunction Solar Cells, but studies by Kobayashi et al [ Solar Energy materials Solar Cells 173(2017)43-49] prove that short-time illumination does not cause attenuation of photoelectric conversion efficiency of amorphous silicon/crystalline silicon heterojunction Solar Cells, but rather can improve the conversion efficiency by about 0.2-0.3. Nevertheless, Jordan et al [ IEEE Jour of Photovoltaics 8(2018)177-182] observed signs of degradation in amorphous/crystalline silicon heterojunction solar cell modules in ongoing research tests for up to 10 years.
Through research, the inventor believes that in the amorphous silicon/crystalline silicon heterojunction solar cell, the attenuation mechanism can be attributed to the reduction of the passivation quality of the amorphous silicon thin film because the short-circuit current and the filling factor of the component are basically kept unchanged. Considering the excellent chemical inertness of the transparent conductive oxide film, the transparent conductive oxide film can effectively block the attenuation sources such as water vapor, sodium ions and the like which penetrate through the packaging material and enter the solar cell, therefore, the root cause of the attenuation of the passivation quality of the amorphous silicon film is possibly related to the amorphous silicon film with the exposed edge, the attenuation sources can diffuse into the solar cell through the window of the amorphous silicon film with the exposed edge, the passivation effect of the amorphous silicon film is damaged, the open-circuit voltage and the filling factor of the solar cell are seriously reduced, and the attenuation of the amorphous silicon/crystalline silicon heterojunction solar cell component caused by the amorphous silicon film with the exposed edge seriously affects the service life and the economic benefit of the component.
Therefore, the amorphous silicon/crystalline silicon heterojunction solar cell and the preparation method provided by the invention are used for improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell, solving the problem that the amorphous silicon thin film with bare edges in the prior art affects the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell, and prolonging the service life of the solar cell.
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to fig. 6 b. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 2, the present invention provides a method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell, comprising the following steps:
preparing an amorphous silicon/crystalline silicon heterojunction structure, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure respectively comprise a central area and an edge area surrounding the central area;
preparing a transparent conductive oxide film, wherein the transparent conductive oxide film covers the central area of the amorphous silicon/crystalline silicon heterojunction structure, and the transparent conductive oxide film at least exposes the edge area positioned on one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure;
forming a metal electrode on the transparent conductive oxide film;
forming a cover film, wherein the cover film at least covers the exposed edge region.
Specifically, as shown in fig. 3 to fig. 6b, schematic structural diagrams presented in each step of preparing the amorphous silicon/crystalline silicon heterojunction solar cell are illustrated.
Referring to fig. 3, first, an amorphous silicon/crystalline silicon heterojunction structure 100 is prepared, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 respectively include doped amorphous silicon thin films with opposite doping types and different components or structures, and the process temperature of the amorphous silicon/crystalline silicon heterojunction structure 100 is not more than 250 ℃.
Specifically, the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 respectively include a central region a and an edge region B surrounding the central region a. In this embodiment, the amorphous silicon/crystalline silicon heterojunction structure 100 includes an N-type single crystal silicon wafer 110, an intrinsic amorphous silicon thin film 120 and an N-type doped amorphous silicon thin film 130 are deposited on an upper surface of the N-type single crystal silicon wafer 110, and an intrinsic amorphous silicon thin film 120 and a P-type doped amorphous silicon thin film 140 are deposited on a lower surface of the N-type single crystal silicon wafer 110, so that the amorphous silicon is formed on the upper surface and the lower surface of the N-type single crystal silicon wafer 110, respectively, wherein the thickness range of the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure 100 includes 5nm to 25nm, and the thicknesses of the amorphous silicon on the upper surface and the lower surface may be equal or different, which is not limited herein. The intrinsic amorphous silicon thin film 120 can passivate the interface between the doped amorphous silicon thin films 130 and 140 and the N-type monocrystalline silicon piece 110, and one or a combination of the upper surface and the lower surface of the N-type monocrystalline silicon piece 110 can be subjected to surface texturing and chemical cleaning, wherein the surface texturing can form a pyramid light-limiting structure for improving light absorption on the surface of the N-type monocrystalline silicon piece 110, and the chemical cleaning can enable the N-type monocrystalline silicon piece 110 to form a clean surface. In another embodiment, the intrinsic amorphous silicon thin film 120 may also be formed only in the upper surface or the lower surface of the N-type monocrystalline silicon piece 110 or the intrinsic amorphous silicon thin film 120 may not be formed in both the upper surface and the lower surface of the N-type monocrystalline silicon piece 110, which is not limited herein. The preparation method of the amorphous silicon/crystalline silicon heterojunction structure 100 comprises the following steps: and respectively preparing the intrinsic amorphous silicon thin film 120, the N-type doped amorphous silicon thin film 130 and the P-type doped amorphous silicon thin film 140 on the upper surface and the lower surface of the N-type monocrystalline silicon wafer 110 by adopting Plasma Enhanced Chemical Vapor Deposition (PECVD), metal thermal catalytic chemical vapor deposition (Cat-CVD) or Hot wire chemical vapor deposition (Hot-wire CVD), so as to form the amorphous silicon/crystalline silicon heterojunction structure 100 with a double-sided passivation structure.
Next, as shown in fig. 4a to 4c, a transparent conductive oxide film 200 is prepared, wherein the transparent conductive oxide film 200 covers the central region a of the amorphous silicon/crystalline silicon heterojunction structure 100, and the transparent conductive oxide film 200 at least exposes the edge region B located on one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100.
Specifically, the transparent conductive oxide film 200 includes one or a combination of a tin-doped indium oxide film, an aluminum-doped indium oxide film, a tungsten-doped indium oxide film, a titanium-doped indium oxide film, a cesium-doped indium oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, and an aluminum-doped gallium zinc oxide film. The thickness of the transparent conductive oxide thin film 200 may range from 30nm to 200nm, such as 100nm and 150 nm.
As a further embodiment of this embodiment, the method for preparing the transparent conductive oxide thin film 200 includes adopting one or a combination of a magnetron sputtering coating technology and a reactive plasma deposition technology to prepare the transparent conductive oxide thin film 200 with low damage and low temperature, so as to obtain the amorphous silicon/crystalline silicon heterojunction solar cell with high efficiency.
As shown in fig. 4a, when the transparent conductive oxide thin film 200 is prepared by the magnetron sputtering coating technique, the transparent conductive oxide thin film 200 may be formed on the central region a by forming an edge mask on the edge regions B in the upper and lower surfaces of the amorphous/crystalline silicon heterojunction structure 100; or as shown in fig. 4B, when the transparent conductive oxide film 200 is prepared by using the reactive plasma deposition technique, an edge mask may be formed on the edge region B of the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100, and then the transparent conductive oxide film 200 may be formed in the central region a of the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 and the upper surface of the amorphous silicon/crystalline silicon heterojunction structure 100; of course, as shown in fig. 4c, the edge region B is exposed on the upper surface of the amorphous silicon/crystalline silicon heterojunction structure 100 according to the requirement, and the preparation method includes one of a magnetron sputtering coating technology and a reactive plasma deposition technology. In another embodiment, a combination of a magnetron sputtering coating technique and a reactive plasma deposition technique may also be used to form the transparent conductive oxide thin films 200 in the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100, wherein the transparent conductive oxide thin film 200 at least covers the central region a, and the exposure condition of the edge region B may be selected as required, which is not limited herein. Thus, the transparent conductive oxide thin films 200 are prevented from being conducted with each other by the edge shielding formed on the edge region B, and the short circuit of the battery is prevented from being caused. The width of the edge region B ranges from 0.5mm to 1.5mm, such as 0.8mm, 1.0mm, 1.2mm, and the like, and is preferably 0.5mm, so as to form a smaller edge mask, thereby ensuring that a larger area of the transparent conductive oxide thin film 200 is formed, which can be selected according to specific processes and requirements.
As a further embodiment of this embodiment, when the transparent conductive oxide thin film 200 is prepared by using a magnetron sputtering coating technique, the thickness range of the transparent conductive oxide thin film 200 includes 80nm, the working pressure range includes 0.4Pa, the power density includes 10KW/m, the temperature of the amorphous silicon/crystalline silicon heterojunction structure 100 does not exceed 150 ℃, and the sputtering target includes tin-doped indium oxide (ITO) so as to form the transparent conductive oxide thin film 200 with a thin thickness and a high uniformity, thereby obtaining the efficient amorphous silicon/crystalline silicon heterojunction solar cell.
Next, as shown in fig. 5, a metal electrode 300 is formed on the transparent conductive oxide film 200.
As a further example of this embodiment, the preparation method of the metal electrode 300 includes one or a combination of screen printing, inkjet printing, electroplating, electroless plating, physical vapor deposition, and spraying, and the temperature for preparing the metal electrode 300 is not more than 250 ℃.
Specifically, in the present embodiment, the structure of fig. 4a that the edge region B is exposed on both sides is taken as an example, and in another embodiment, the structure shown in fig. 4B or 4c may also be taken, which is not limited herein. And coating low-temperature silver paste on the surface of the transparent conductive oxide film 200 by screen printing, and then curing to prepare the metal electrode 300, wherein the curing temperature comprises 220 ℃ and the curing time comprises 40 min. The specific type and preparation process of the metal electrode 300 are not limited herein.
Finally, a cover film 400 is formed, wherein the cover film 400 covers at least the exposed edge region B.
As shown in fig. 6a, in the present embodiment, the cover film 400 covers the surface of the transparent conductive oxide film 200, the surface of the metal electrode 300, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure 100. In another embodiment, as shown in fig. 6B, the cover film 400 only covers the edge region B. The cover film 400 is required to cover at least the edge region B, and the specific covering condition can be selected according to the needs, and is not limited herein.
As a further embodiment of this embodiment, the cover film 400 includes one or a combination of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film; the preparation method of the cover film 400 comprises one or a combination of plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition, atomic layer deposition, sol-gel method, physical vapor deposition, infiltration and chemical wet oxidation, and the temperature for preparing the cover film is not more than 250 ℃.
Specifically, a plasma enhanced chemical vapor deposition technology may be adopted, the process temperature is not more than 200 ℃, one or a combination of a silicon nitride film, a silicon oxide film and a silicon oxynitride film is prepared to form the cover film 400, and the cover film 400 may cover the surface of the transparent conductive oxide film 200, the surface of the metal electrode 300 and the side surface of the amorphous silicon/crystalline silicon heterojunction structure 100. The cover film 400 and the transparent conductive oxide film 300 form a multi-layer antireflection film stack, and when the cover film 400 is located on a light receiving surface (upper surface) of the amorphous silicon/crystalline silicon heterojunction solar cell, the cover film 400 can effectively improve the short-circuit current of the solar cell, thereby realizing the gain of the photoelectric conversion efficiency. When the cover film 400 is located on the backlight surface (lower surface) of the amorphous silicon/crystalline silicon heterojunction solar cell, the stability of the solar cell can be improved. Therefore, in this embodiment, the cover film 400 covers the surface of the transparent conductive oxide film 200, the surface of the metal electrode 300, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure 100, so that the process difficulty can be reduced, and the stability of the solar cell and the gain of the photoelectric conversion efficiency can be improved at the same time. The stability of the amorphous silicon/crystalline silicon heterojunction solar cell is maximized by utilizing the chemical inertness of silicon nitride, silicon oxide and silicon oxynitride, and meanwhile, the antireflection effect of the amorphous silicon/crystalline silicon heterojunction solar cell is optimized by virtue of the characteristic that the optical refractive indexes of the silicon nitride, the silicon oxide and the silicon oxynitride are controllable, so that the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell is improved, and the dual purposes of improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell are achieved.
As a further example of this embodiment, the range of the thickness of the cover film 400 includes 10nm to 100 nm.
Specifically, when the cover film 400 is covered on the surface of the metal electrode 300, the thickness of the cover film 400 does not affect the conductivity of the metal electrode 300. The thickness of the cover film 400 may be 20nm, 50nm, or 90nm, and the thickness of the cover film 400 in this embodiment is 80nm, so that the cover film 400 and the transparent conductive oxide film 200 have the same thickness, which is convenient for further improving the stability and the photoelectric conversion efficiency of the solar cell by the cover film 400.
Example two
Fig. 6a to 6b show that the present invention further provides an amorphous silicon/crystalline silicon heterojunction solar cell, which includes:
the amorphous silicon/crystalline silicon heterojunction structure 100 comprises an amorphous silicon/crystalline silicon heterojunction structure 100, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 respectively comprise a central area A and an edge area B surrounding the central area A;
the transparent conductive oxide film 200, the transparent conductive oxide film 200 covers the central area a of the amorphous silicon/crystalline silicon heterojunction structure 100, and the transparent conductive oxide film 200 at least exposes the edge area B located on one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100;
a metal electrode 300 on the transparent conductive oxide thin film 200;
a cover film 400, wherein the cover film 400 covers at least the exposed edge region B.
Specifically, the amorphous silicon/crystalline silicon heterojunction solar cell can be prepared by the method for preparing the amorphous silicon/crystalline silicon heterojunction solar cell in the first embodiment, but is not limited thereto.
As shown in fig. 3, the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 respectively include the central region a and the edge region B surrounding the central region a. In this embodiment, the amorphous silicon/crystalline silicon heterojunction structure 100 includes an N-type single crystal silicon wafer 110, an intrinsic amorphous silicon thin film 120 and an N-type doped amorphous silicon thin film 130 are deposited on an upper surface of the N-type single crystal silicon wafer 110, and an intrinsic amorphous silicon thin film 120 and a P-type doped amorphous silicon thin film 140 are deposited on a lower surface of the N-type single crystal silicon wafer 110, so that the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure 100 is formed on the upper and lower surfaces of the N-type single crystal silicon wafer 110, respectively. The thickness of the amorphous silicon ranges from 5nm to 25nm, and the thicknesses of the amorphous silicon on the upper and lower surfaces may be equal or different, which is not limited herein. The intrinsic amorphous silicon thin film 120 can passivate the interface between the doped amorphous silicon thin films 130 and 140 and the N-type monocrystalline silicon piece 110, and one or a combination of the upper surface and the lower surface of the N-type monocrystalline silicon piece 110 can be subjected to surface texturing and chemical cleaning, wherein the surface texturing can form a pyramid light-limiting structure for improving light absorption on the surface of the N-type monocrystalline silicon piece 110, and the chemical cleaning can enable the N-type monocrystalline silicon piece 110 to form a clean surface. In another embodiment, the intrinsic amorphous silicon thin film 120 may also be formed only in the upper surface or the lower surface of the N-type monocrystalline silicon piece 110 or the intrinsic amorphous silicon thin film 120 may not be formed in both the upper surface and the lower surface of the N-type monocrystalline silicon piece 110, which is not limited herein.
As a further example of this embodiment, the transparent conductive oxide thin film 200 includes one or a combination of a tin-doped indium oxide thin film, an aluminum-doped indium oxide thin film, a tungsten-doped indium oxide thin film, a titanium-doped indium oxide thin film, a cesium-doped indium oxide thin film, an aluminum-doped zinc oxide thin film, a gallium-doped zinc oxide thin film, and an aluminum-gallium-doped zinc oxide thin film. The thickness of the transparent conductive oxide thin film 200 may range from 30nm to 200nm, such as 100nm and 150 nm.
As a further embodiment of this embodiment, the width of the edge region B ranges from 0.5mm to 1.5mm, such as 0.8mm, 1.0mm, 1.2mm, and the like, and is preferably 0.5mm, so as to form a smaller edge mask, thereby ensuring that a larger area of the transparent conductive oxide thin film 200 is formed, which can be selected according to specific processes and requirements.
Specifically, as shown in fig. 4a, when the transparent conductive oxide thin film 200 is prepared by using the magnetron sputtering coating technology, an edge mask may be formed on the edge regions B in the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100, and then the transparent conductive oxide thin film 200 may be formed on the central region a; or as shown in fig. 4B, when the transparent conductive oxide film 200 is prepared by using the reactive plasma deposition technique, an edge mask may be formed on the edge region B of the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100, and then the transparent conductive oxide film 200 may be formed in the central region a of the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100 and the upper surface of the amorphous silicon/crystalline silicon heterojunction structure 100; of course, as shown in fig. 4c, the edge region B is exposed on the upper surface of the amorphous silicon/crystalline silicon heterojunction structure 100 according to the requirement, and the preparation method includes one of a magnetron sputtering coating technology and a reactive plasma deposition technology. In another embodiment, a combination of a magnetron sputtering coating technique and a reactive plasma deposition technique may also be used to form the transparent conductive oxide thin films 200 in the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure 100, wherein the transparent conductive oxide thin film 200 at least covers the central region a, and the exposure condition of the edge region B may be selected as required, which is not limited herein. Thus, the transparent conductive oxide thin films 200 are prevented from being conducted with each other by the edge shielding formed on the edge region B, and the short circuit of the battery is prevented from being caused.
As a further example of this embodiment, the metal electrode 300 comprises a silver electrode.
Specifically, as shown in fig. 5, the transparent conductive oxide film 200 has a metal electrode 300 thereon. The metal electrode 300 may be prepared by coating a low-temperature silver paste on the surface of the transparent conductive oxide film 200 by screen printing, and then curing, i.e., the metal electrode 300 may be a silver electrode, but is not limited thereto, and may also be a copper electrode, an aluminum electrode, or the like.
As a further embodiment of this embodiment, the cover film 400 includes one or a combination of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film.
Specifically, as shown in fig. 6a, in the present embodiment, the cover film 400 covers the surface of the transparent conductive oxide film 200, the surface of the metal electrode 300, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure 100. In another embodiment, as shown in fig. 6B, the cover film 400 only covers the edge region B. The cover film 400 is required to cover at least the edge region B, and the specific covering condition can be selected according to the needs, and is not limited herein. The cover film 400 and the transparent conductive oxide film 300 may form a multi-layer antireflection film stack, and when the cover film 400 is located on a light receiving surface (upper surface) of the amorphous silicon/crystalline silicon heterojunction solar cell, the cover film 400 may effectively improve a short-circuit current of the solar cell, thereby realizing a gain of photoelectric conversion efficiency. When the cover film 400 is located on the backlight surface (lower surface) of the amorphous silicon/crystalline silicon heterojunction solar cell, the stability of the solar cell can be improved. Therefore, in this embodiment, the cover film 400 covers the surface of the transparent conductive oxide film 200, the surface of the metal electrode 300, and the side surface of the amorphous silicon/crystalline silicon heterojunction structure 100, so that the process difficulty can be reduced, and the stability of the solar cell and the gain of the photoelectric conversion efficiency can be improved at the same time. The stability of the amorphous silicon/crystalline silicon heterojunction solar cell is maximized by utilizing the chemical inertness of silicon nitride, silicon oxide and silicon oxynitride, and meanwhile, the antireflection effect of the amorphous silicon/crystalline silicon heterojunction solar cell is optimized by virtue of the characteristic that the optical refractive indexes of the silicon nitride, the silicon oxide and the silicon oxynitride are controllable, so that the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell is improved, and the dual purposes of improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell are achieved.
As a further example of this embodiment, the range of the thickness of the cover film 400 includes 10nm to 100 nm.
Specifically, when the cover film 400 is covered on the surface of the metal electrode 300, the thickness of the cover film 400 does not affect the conductivity of the metal electrode 300. The thickness of the cover film 400 may be 20nm, 50nm, or 90nm, and the thickness of the cover film 400 in this embodiment is 80nm, so that the cover film 400 and the transparent conductive oxide film 200 have the same thickness, which is convenient for further improving the stability and the photoelectric conversion efficiency of the solar cell by the cover film 400.
EXAMPLE III
In order to further enable the technical personnel in the field to understand the beneficial effects of the invention, the invention also provides a comparison of the amorphous silicon/crystalline silicon heterojunction solar cell (figure 6a) prepared by the invention and the existing conventional amorphous silicon/crystalline silicon heterojunction solar cell (figure 4a) under the same exposure time and intensity, and the structure shows that after double 85 (humidity: 85%; temperature 85 ℃) aging treatment is carried out for 1000 hours, the photoluminescence (P L) photo brightness of the amorphous silicon/crystalline silicon heterojunction solar cell is higher, which shows that the amorphous silicon/crystalline silicon heterojunction solar cell has higher moist heat stability and better passivation effect maintenance, so that the stability and photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell can be improved.
In summary, according to the amorphous silicon/crystalline silicon heterojunction solar cell and the preparation method thereof, when the transparent conductive oxide thin films are prepared on the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure, the transparent conductive oxide thin film covers the central region of the amorphous silicon/crystalline silicon heterojunction structure, and the transparent conductive oxide thin film at least exposes the edge regions of one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure, so that the transparent conductive oxide thin films can be completely isolated and not conducted with each other, the short circuit of the cell is avoided, and the filling factor of the solar cell is improved; the exposed edge area is covered by the covering film, the stability of the amorphous silicon/crystalline silicon heterojunction solar cell is maximized by utilizing the chemical inertness of silicon nitride, silicon oxide and silicon oxynitride, and meanwhile, the antireflection effect of the amorphous silicon/crystalline silicon heterojunction solar cell is optimized by means of the characteristic that the optical refractive indexes of the silicon nitride, the silicon oxide and the silicon oxynitride are controllable, so that the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell is improved, the dual purposes of improving the stability and the photoelectric conversion efficiency of the amorphous silicon/crystalline silicon heterojunction solar cell are achieved, the advantages of low cost and high stability are achieved, and the solar cell has wide application prospect and economic value in the field of solar cell preparation. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (17)
1. A preparation method of an amorphous silicon/crystalline silicon heterojunction solar cell is characterized by comprising the following steps:
preparing an amorphous silicon/crystalline silicon heterojunction structure, wherein the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure respectively comprise a central area and an edge area surrounding the central area;
preparing a transparent conductive oxide film, wherein the transparent conductive oxide film covers the central area of the amorphous silicon/crystalline silicon heterojunction structure, and the transparent conductive oxide film at least exposes the edge area positioned on one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure;
forming a metal electrode on the transparent conductive oxide film;
forming a cover film, wherein the cover film at least covers the exposed edge region.
2. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the covering film comprises one or a combination of a silicon nitride film, a silicon oxide film and a silicon oxynitride film.
3. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the preparation method of the covering film comprises one or a combination of plasma enhanced chemical vapor deposition, metal organic chemical vapor deposition, atomic layer deposition, sol-gel method, physical vapor deposition, infiltration and chemical wet oxidation, and the temperature for preparing the covering film is not more than 250 ℃.
4. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the thickness of the cover film is in the range of 10nm to 100 nm.
5. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the covering film also covers the surface of the transparent conductive oxide film, the surface of the metal electrode and the side face of the amorphous silicon/crystalline silicon heterojunction structure.
6. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the thickness range of the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure comprises 5 nm-25 nm.
7. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the transparent conductive oxide film comprises one or a combination of a tin-doped indium oxide film, an aluminum-doped indium oxide film, a tungsten-doped indium oxide film, a titanium-doped indium oxide film, a cesium-doped indium oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film and an aluminum-gallium-doped zinc oxide film.
8. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the range of the thickness of the transparent conductive oxide thin film includes 30nm to 200 nm.
9. The method for preparing an amorphous silicon/crystalline silicon heterojunction solar cell as claimed in claim 1, wherein: the preparation method of the metal electrode comprises one or a combination of screen printing, ink-jet printing, electroplating, chemical plating, physical vapor deposition and spraying, and the temperature for preparing the metal electrode is not more than 250 ℃.
10. An amorphous silicon/crystalline silicon heterojunction solar cell, comprising:
the amorphous silicon/crystal silicon heterojunction structure comprises an upper surface and a lower surface which respectively comprise a central area and an edge area surrounding the central area;
the transparent conductive oxide film covers the central area of the amorphous silicon/crystalline silicon heterojunction structure, and at least exposes the edge area of one of the upper surface and the lower surface of the amorphous silicon/crystalline silicon heterojunction structure;
a metal electrode on the transparent conductive oxide film;
a cover film covering at least the exposed edge region.
11. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the covering film comprises one or a combination of a silicon nitride film, a silicon oxide film and a silicon oxynitride film.
12. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the thickness of the cover film is in the range of 10nm to 100 nm.
13. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the covering film also covers the surface of the transparent conductive oxide film, the surface of the metal electrode and the side face of the amorphous silicon/crystalline silicon heterojunction structure.
14. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the thickness range of the amorphous silicon in the amorphous silicon/crystalline silicon heterojunction structure comprises 5 nm-25 nm.
15. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the transparent conductive oxide film comprises one or a combination of a tin-doped indium oxide film, an aluminum-doped indium oxide film, a tungsten-doped indium oxide film, a titanium-doped indium oxide film, a cesium-doped indium oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film and an aluminum-gallium-doped zinc oxide film.
16. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the range of the thickness of the transparent conductive oxide thin film includes 30nm to 200 nm.
17. The amorphous silicon/crystalline silicon heterojunction solar cell of claim 10, wherein: the width of the edge area is 0.5 mm-1.5 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811601967.XA CN111435693A (en) | 2018-12-26 | 2018-12-26 | Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811601967.XA CN111435693A (en) | 2018-12-26 | 2018-12-26 | Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111435693A true CN111435693A (en) | 2020-07-21 |
Family
ID=71579752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811601967.XA Pending CN111435693A (en) | 2018-12-26 | 2018-12-26 | Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111435693A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115347056A (en) * | 2022-10-19 | 2022-11-15 | 北京晶澳太阳能光伏科技有限公司 | Solar cell |
| CN115360270A (en) * | 2022-10-19 | 2022-11-18 | 北京晶澳太阳能光伏科技有限公司 | Solar cell and preparation method thereof |
-
2018
- 2018-12-26 CN CN201811601967.XA patent/CN111435693A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115347056A (en) * | 2022-10-19 | 2022-11-15 | 北京晶澳太阳能光伏科技有限公司 | Solar cell |
| CN115360270A (en) * | 2022-10-19 | 2022-11-18 | 北京晶澳太阳能光伏科技有限公司 | Solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109004053B (en) | Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof | |
| US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
| US9023681B2 (en) | Method of fabricating heterojunction battery | |
| US20110277816A1 (en) | Solar cell with shade-free front electrode | |
| US20100243042A1 (en) | High-efficiency photovoltaic cells | |
| CN103489934A (en) | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof | |
| US20130125974A1 (en) | Solar cell with metal grid fabricated by electroplating | |
| WO2020024425A1 (en) | Solar cell chip and preparation method therefor | |
| CN209104182U (en) | Amorphous silicon/crystalline silicon heterojunction solar battery | |
| US10396219B2 (en) | Transparent conductive oxide in silicon heterojunction solar cells | |
| KR20120137821A (en) | Solar cell | |
| CN217306521U (en) | Solar cell and photovoltaic module | |
| CN107359211B (en) | Solar cell with two-dimensional conductive material array embedded transparent electrode film | |
| JP2014103259A (en) | Solar cell, solar cell module, and method of manufacturing the same | |
| KR20130109786A (en) | Solar cell and manufacturing method thereof | |
| RU2590284C1 (en) | Solar cell | |
| CN108615775B (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
| CN111435693A (en) | Amorphous silicon/crystalline silicon heterojunction solar cell and preparation method thereof | |
| CN112151626B (en) | Solar cell, production method and photovoltaic module | |
| CN218160390U (en) | HJT battery structure with passivation medium oxide film | |
| CN115295659A (en) | High-efficiency HJT battery structure and preparation method thereof | |
| CN113437161A (en) | Solar cell, preparation method thereof and photovoltaic module | |
| KR20120140026A (en) | Solar cell | |
| US20140332051A1 (en) | Solar cell module and method of fabricating the same | |
| CN221861670U (en) | Heterojunction battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |