CN208521952U - A kind of back contacts hetero-junctions n type single crystal silicon solar cell - Google Patents
A kind of back contacts hetero-junctions n type single crystal silicon solar cell Download PDFInfo
- Publication number
- CN208521952U CN208521952U CN201821040332.2U CN201821040332U CN208521952U CN 208521952 U CN208521952 U CN 208521952U CN 201821040332 U CN201821040332 U CN 201821040332U CN 208521952 U CN208521952 U CN 208521952U
- Authority
- CN
- China
- Prior art keywords
- layer
- single crystal
- crystal silicon
- type single
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 60
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 26
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000003786 synthesis reaction Methods 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of back contacts hetero-junctions n type single crystal silicon solar cell, including a n type single crystal silicon matrix, n type single crystal silicon matrix has opposite a front and a back side；It is sequentially arranged in passivation layer before the intrinsic amorphous silicon of n type single crystal silicon front side of matrix, positive N-type non-crystalline silicon layer and anti-reflection layer；It is sequentially deposited to the doping N at the n type single crystal silicon matrix back side+Layer and intrinsic amorphous silicon carry on the back passivation layer；Interval is set to back side N-type non-crystalline silicon layer and P-type non-crystalline silicon layer on intrinsic amorphous silicon back passivation layer；Contact layer in back side N-type non-crystalline silicon layer and P-type non-crystalline silicon layer；Dielectric isolation layer between back side N-type non-crystalline silicon layer and P-type non-crystalline silicon layer.The back contacts hetero-junctions n type single crystal silicon solar cell of the utility model, to improve the synthesis photoelectric conversion efficiency of n type single crystal silicon solar cell.
Description
Technical field
The utility model relates to technical field of solar batteries, and in particular, to a kind of back contacts hetero-junctions n type single crystal silicon
Solar cell.
Background technique
Crystal-silicon solar cell has high conversion efficiency, good operating stability, long working life and manufacturing technology maturation etc.
Feature is the main force in current photovoltaic market.The p type single crystal silicon material of opposite boron-doping, the n type single crystal silicon material of p-doped
Middle boron content is extremely low, can be ignored by boron oxygen to caused photo attenuation, and some metal impurities in N-type silicon materials are empty to few son
Capture ability of the capture ability in cave lower than the impurity in P-type material to sub- electronics less, the N-type silicon ratio P under identical doping concentration
Type silicon has higher minority carrier lifetime.These characteristics make N-type silion cell have potential long-life and efficient
Advantage, N-type silion cell solar cell have become the developing direction of the following high efficiency crystal-silicon solar cell, and how to improve N-type
The photoelectric conversion efficiency of silion cell solar cell is always the emphasis for studying N-type silion cell solar cell, influences N-type silion cell
Photoelectric conversion efficiency of the solar battery it is many because being known as, and mutually restricted between several factors, thus how to integrate measure it is each
Factor is that we are instantly to be solved to improve the synthesis photoelectric conversion efficiency of N-type silion cell solar cell.
Utility model content
To solve the above-mentioned problems of the prior art, the utility model provides a kind of back contacts hetero-junctions N-type monocrystalline
Silicon solar cell, to improve the synthesis photoelectric conversion efficiency of n type single crystal silicon solar cell.
In order to reach above-mentioned purpose of utility model, the utility model uses the following technical solution:
The utility model provides a kind of back contacts hetero-junctions n type single crystal silicon solar cell, comprising:
One n type single crystal silicon matrix, the n type single crystal silicon matrix have opposite a front and a back side；
It is sequentially arranged in passivation layer before the intrinsic amorphous silicon of the n type single crystal silicon front side of matrix, positive N-type non-crystalline silicon layer and subtracts
Anti- layer；
It is sequentially deposited to the doping N at the n type single crystal silicon matrix back side+Layer and intrinsic amorphous silicon carry on the back passivation layer；
Interval is set to back side N-type non-crystalline silicon layer and P-type non-crystalline silicon layer on intrinsic amorphous silicon back passivation layer；
Contact layer in the back side N-type non-crystalline silicon layer and the P-type non-crystalline silicon layer；
Dielectric isolation layer between the back side N-type non-crystalline silicon layer and the P-type non-crystalline silicon layer.
Preferably, the doping N+Layer is equipped with multiple, multiple doping N+Layer is successively intervally arranged.
Preferably, each doping N+Layer is opposite with a back side N-type non-crystalline silicon layer.
Preferably, the doping N+Layer is that N is lightly doped+Layer, the doping N+The surface dopant concentration of layer less than 1 ×
1018cm-3, diffusion depth is 0.2~1 μm.
Preferably, the n type single crystal silicon base resistivity is 0.5~10 Ω cm, with a thickness of 100~300 μm.
Preferably, passivation layer and/or intrinsic amorphous silicon back passivation layer and/or the front N before the intrinsic amorphous silicon
Type amorphous silicon layer with a thickness of 1~15nm.
Preferably, the anti-reflection layer is one or two kinds of combinations of oxide, nitride, and the anti-reflection layer is with a thickness of 50
~200nm.
Preferably, the P-type non-crystalline silicon layer with a thickness of 10~100nm, width is 100~1000 μm.
Preferably, the contact layer is made of transparent conductive film and metal electrode lamination.
Preferably, the transparent conductive film includes the In of tin dope2O3With the ZnO of aluminium doping, the metal electrode is
Silver, copper or aluminium.
Compared with prior art, the back contacts hetero-junctions n type single crystal silicon solar cell of the utility model, front is without grid line
Shading reduces light loss, it is ensured that battery has high short circuit current；Battery tow sides have the intrinsic amorphous of high quality
The surface recombination of interfacial state and monocrystalline silicon is greatly reduced to be passivated the defect of monocrystalline silicon surface in silicon layer, improves the minority carrier longevity
Life, obtains higher open-circuit voltage；And by gently being mixed in the back side local setting of interdigital back contacts hetero-junctions n type single crystal silicon battery
Miscellaneous N+Layer, on the one hand strengthens the field passivation effect of back side N-type amorphous silicon, reduces the recombination rate of photo-generated carrier, further
Improve the open-circuit voltage of battery；On the other hand the lateral low-resistance conductive path of photo-generated carrier is provided, reduces series electrical
Resistance loss, improves the fill factor of battery, to improve the synthesis photoelectric conversion efficiency of battery；In addition, the utility model
Selective doping is carried out by the way of diffusion or ion implanting at the back side of n type single crystal silicon matrix, the preparation back side is locally gently mixed
Miscellaneous N+Layer, it is simple process, easy to accomplish；And the process is arranged before amorphous silicon layer depositing operation, will not influence to amorphous silicon
The damage of layer bring and pollution.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only that this is practical new
Some embodiments of type for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of the back contacts hetero-junctions n type single crystal silicon solar cell of the utility model embodiment.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
It describes in detail, it is clear that described embodiment is only a part of example of the utility model, rather than whole embodiments.Base
In the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, belongs to scope of protection of the utility model.
It is a kind of back contacts hetero-junctions n type single crystal silicon solar cell of the utility model embodiment comprising N referring to Fig. 1
Passivation layer 2, positive N-type non-crystalline silicon layer 3, anti-reflection layer 4, doping N before type single crystal silicon substrate 1, intrinsic amorphous silicon+Layer 5, intrinsic amorphous
Silicon carries on the back passivation layer 6, back side N-type non-crystalline silicon layer 7, P-type non-crystalline silicon layer 8, contact layer 9, dielectric isolation layer 10.
Wherein as shown in Figure 1, n type single crystal silicon matrix 1 has an opposite front and a back side, through over cleaning, go to damage
Hurt layer, making herbs into wool n type single crystal silicon matrix 1 the back side preparation back side N is locally lightly doped+Layer 5；In the front of n type single crystal silicon matrix 1
It is sequentially depositing passivation layer 2 before intrinsic amorphous silicon, positive N-type non-crystalline silicon layer 3 and anti-reflection layer 4；Overleaf prepare intrinsic amorphous silicon back
Passivation layer 6；In the surface alternating deposit P-type non-crystalline silicon layer 8 and back side N-type non-crystalline silicon layer 7 of intrinsic amorphous silicon back passivation layer 6；In P
8 surface of type amorphous silicon layer is sequentially depositing transparent conductive film, metal oxide film, forms emitter contact layer, overleaf N-type amorphous
7 surface of silicon layer is sequentially depositing transparent conductive film, metal film, forms base contact；It is non-in P-type non-crystalline silicon layer 8 and back side N-type
Area deposition dielectric isolation layer 10 between crystal silicon layer 7.
The solar cell front of the utility model embodiment does not have any distribution of electrodes, emitter and base stage be alternately arranged in
Cell backside collects the photo-generated carrier that crystalline silicon photovoltaic effect generates, since battery front side does not have metal electrode grid line respectively
The optical loss of generation is blocked, the short circuit current of cell piece can be effectively increased, improves transfer efficiency.
The n type single crystal silicon solar cell of the present embodiment is carried on the back by passivation layer 2 before intrinsic amorphous silicon and intrinsic amorphous silicon simultaneously
The good surface passivation of passivation layer 6 effect, it is very thin intrinsic non-by being respectively set in 1 front and back of n type single crystal silicon matrix
Passivation layer 2 and intrinsic amorphous silicon carry on the back passivation layer 6 before crystal silicon, can be passivated the defect on 1 surface of n type single crystal silicon matrix, boundary is greatly reduced
The surface recombination of face state and monocrystalline silicon obtains higher open-circuit voltage to improve minority carrier lifetime.Preferably, intrinsic
Before amorphous silicon passivation layer 2 and/or intrinsic amorphous silicon back passivation layer 6 with a thickness of 1~15nm.
In addition, being found in the actual research process of applicant, due to the solar cell front photoproduction current-carrying of the present embodiment
Sub- generation rate is high, and the width in back side P-type non-crystalline silicon area is often larger, and the width of back side N-type amorphous silicon region is often smaller, silicon lining
The resistivity at bottom is higher, therefore the photo-generated carrier for resulting from battery front side needs to transmit relatively long distance and gets to cell backside
It is collected, the transmission of photo-generated carrier increases the loss of series resistance, causes fill factor to reduce, influences solar battery
Photoelectric conversion efficiency.Therefore in order to reduce the reduction of fill factor, to further increase the photoelectric conversion efficiency of battery, such as Fig. 1
Shown, doping N is arranged at 1 back side of n type single crystal silicon matrix in the present embodiment+Layer 5, due to adulterating N+Layer 5 is located at n type single crystal silicon matrix 1
The back side, in order to reduce the influence of the photo-generated carrier generated due to the doping to n type single crystal silicon matrix 1, the embodiment of the present invention
Adulterate N+Layer 5 is that N is lightly doped+Layer, the doping N+The surface dopant concentration of layer 5 is less than 1 × 1018cm-3, diffusion depth 0.2
~1 μm, which is effectively guaranteed the photo-generated carrier of the generation of n type single crystal silicon matrix 1, and reduces photo-generated carrier transmission string
Join the loss of resistance, improve fill factor, synthesis improves the photoelectric conversion efficiency of solar cell.
Preferably, as shown in Figure 1, the doping N+Layer 5 is equipped with multiple, multiple doping N+Layer 5 is successively intervally arranged.
More preferably, each doping N+Layer 5 is exhausted with a back side N-type non-crystalline silicon layer 7 and 7 two sides of back side N-type non-crystalline silicon layer
Edge separation layer is opposite.Adulterate N+Layer is oppositely arranged with back side N-type non-crystalline silicon layer 7, strengthens the field of back side N-type non-crystalline silicon layer 7
Passivation effect reduces the recombination rate of photo-generated carrier, further improves the open-circuit voltage of battery.
In addition, the utility model is selected by the way of diffusion or ion implanting at the back side of n type single crystal silicon matrix
Property doping, preparation the back side N is locally lightly doped+Layer 5, it is simple process, easy to accomplish；And process setting deposits work in amorphous silicon layer
Before skill, it will not influence and amorphous silicon layer bring is damaged and is polluted.
Preferably, 1 resistivity of the embodiment of the present invention n type single crystal silicon matrix is 0.5~10 Ω cm, with a thickness of 100~
300μm。
Preferably, anti-reflection layer 4 is one or two kinds of combinations of oxide, nitride, the anti-reflection layer 4 with a thickness of 50~
200nm.The anti-reflection layer 4 of the thickness reduces reflection loss to the maximum extent, and increases the transmitance of light, to improve the effect of battery
Rate.
Referring to Fig.1, P-type non-crystalline silicon layer 8 with a thickness of 10~100nm, width is 100~1000 μm.Wherein back side N-type is non-
The thickness of crystal silicon layer 7 is identical as the thickness of P-type non-crystalline silicon layer 8, but its width is less than the width of P-type non-crystalline silicon layer 8.
Wherein, contact layer 9 can be made of transparent conductive film and metal electrode lamination.The transparent conductive film includes tin
The In of doping2O3With the ZnO (AZO) etc. of aluminium doping, the metal electrode is the materials such as silver, copper or aluminium.The width of contact layer 9 is
10~300 μm.
Preferably, dielectric isolation layer 10 uses one or more combinations of silica, silicon nitride, aluminium oxide.
The back contacts hetero-junctions n type single crystal silicon solar cell of the utility model, front reduce light loss without grid line shading
Consumption, it is ensured that battery has high short circuit current；Battery tow sides have the intrinsic amorphous silicon layer of high quality, to be passivated monocrystalline
The surface recombination of interfacial state and monocrystalline silicon is greatly reduced in the defect of silicon face, improves minority carrier lifetime, obtains higher open
Road voltage；And by the way that N is lightly doped in the back side local setting of interdigital back contacts hetero-junctions n type single crystal silicon battery+On the one hand layer adds
The strong field passivation effect of back side N-type amorphous silicon, reduces the recombination rate of photo-generated carrier, further improves the open circuit of battery
Voltage；On the other hand the lateral low-resistance conductive path of photo-generated carrier is provided, reduces series resistance losses, improves battery
Fill factor, to improve the synthesis photoelectric conversion efficiency of battery；In addition, the utility model is in n type single crystal silicon matrix
The back side carries out selective doping by the way of diffusion or ion implanting, and N is locally lightly doped in the preparation back side+Layer, simple process, appearance
Easily realize；And the process is arranged before amorphous silicon layer depositing operation, will not influence and damages and pollute to amorphous silicon layer bring.
Although the utility model has shown and described referring to specific embodiment, those skilled in the art will be managed
Solution, in the case where not departing from the spirit and scope of the utility model being defined by the claims and their equivalents, can herein into
The various change of row in form and details.
Claims (10)
1. a kind of back contacts hetero-junctions n type single crystal silicon solar cell characterized by comprising
One n type single crystal silicon matrix (1), the n type single crystal silicon matrix (1) have opposite a front and a back side；
It is sequentially arranged in passivation layer (2) before the positive intrinsic amorphous silicon of the n type single crystal silicon matrix (1), positive N-type non-crystalline silicon layer
(3) and anti-reflection layer (4)；
It is sequentially deposited to the doping N at n type single crystal silicon matrix (1) back side+Layer (5) and intrinsic amorphous silicon back passivation layer (6)；
Interval is set to back side N-type non-crystalline silicon layer (7) and P-type non-crystalline silicon layer (8) on intrinsic amorphous silicon back passivation layer (6)；
Contact layer (9) on the back side N-type non-crystalline silicon layer (7) and the P-type non-crystalline silicon layer (8)；
Dielectric isolation layer (10) between the back side N-type non-crystalline silicon layer (7) and the P-type non-crystalline silicon layer (8).
2. n type single crystal silicon solar cell according to claim 1, which is characterized in that the doping N+Layer (5) be equipped with it is multiple,
Multiple doping N+Layer (5) is successively intervally arranged.
3. n type single crystal silicon solar cell according to claim 2, which is characterized in that each doping N+Layer (5) and one
The back side N-type non-crystalline silicon layer (7) is opposite.
4. n type single crystal silicon solar cell according to any one of claims 1 to 3, which is characterized in that the doping N+Layer
It (5) is that N is lightly doped+Layer, the doping N+The surface dopant concentration of layer (5) is less than 1 × 1018cm-3, diffusion depth is 0.2~1 μ
m。
5. n type single crystal silicon solar cell according to claim 4, which is characterized in that n type single crystal silicon matrix (1) electricity
Resistance rate is 0.5~10 Ω cm, with a thickness of 100~300 μm.
6. n type single crystal silicon solar cell according to claim 4, which is characterized in that passivation layer before the intrinsic amorphous silicon
(2) and/or intrinsic amorphous silicon back passivation layer (6) and/or the positive N-type non-crystalline silicon layer (3) with a thickness of 1~15nm.
7. n type single crystal silicon solar cell according to claim 6, which is characterized in that the anti-reflection layer (4) be oxide,
One or two kinds of combinations of nitride, the anti-reflection layer (4) is with a thickness of 50~200nm.
8. n type single crystal silicon solar cell according to claim 7, which is characterized in that the thickness of the P-type non-crystalline silicon layer (8)
Degree is 10~100nm, and width is 100~1000 μm.
9. n type single crystal silicon solar cell according to claim 4, which is characterized in that the contact layer (9) is by electrically conducting transparent
Film and metal electrode lamination form.
10. n type single crystal silicon solar cell according to claim 9, which is characterized in that the transparent conductive film includes tin
The In of doping2O3With the ZnO of aluminium doping, the metal electrode is silver, copper or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821040332.2U CN208521952U (en) | 2018-07-03 | 2018-07-03 | A kind of back contacts hetero-junctions n type single crystal silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821040332.2U CN208521952U (en) | 2018-07-03 | 2018-07-03 | A kind of back contacts hetero-junctions n type single crystal silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208521952U true CN208521952U (en) | 2019-02-19 |
Family
ID=65337132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821040332.2U Withdrawn - After Issue CN208521952U (en) | 2018-07-03 | 2018-07-03 | A kind of back contacts hetero-junctions n type single crystal silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208521952U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666387A (en) * | 2018-07-03 | 2018-10-16 | 黄河水电光伏产业技术有限公司 | A kind of back contacts hetero-junctions n type single crystal silicon solar cell |
-
2018
- 2018-07-03 CN CN201821040332.2U patent/CN208521952U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666387A (en) * | 2018-07-03 | 2018-10-16 | 黄河水电光伏产业技术有限公司 | A kind of back contacts hetero-junctions n type single crystal silicon solar cell |
| CN108666387B (en) * | 2018-07-03 | 2024-01-30 | 黄河水电光伏产业技术有限公司 | Back contact heterojunction N-type monocrystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109244194B (en) | Preparation method of low-cost P-type full back electrode crystalline silicon solar cell | |
| US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
| US20130298973A1 (en) | Tunneling-junction solar cell with shallow counter doping layer in the substrate | |
| CN110047965A (en) | A kind of novel back contacts hetero-junction solar cell and preparation method thereof | |
| CN110034193A (en) | A kind of how thin grid IBC battery of Topcon passivating structure and preparation method thereof | |
| CN102214719B (en) | Back contact heterojunction solar battery based on N-type silicon slice | |
| CN105122467B (en) | Photovoltaic element and its manufacture method | |
| KR100990864B1 (en) | Solar cell and method for manufacturing the same | |
| CN112397596A (en) | Low-cost high-efficiency solar cell and preparation method thereof | |
| CN108615775B (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
| CN103985778B (en) | Heterojunction solar battery with selective emitter and preparation method thereof | |
| KR101612133B1 (en) | Metal Wrap Through type solar cell and method for fabricating the same | |
| KR101247815B1 (en) | Hetero-junction silicon solar cell and method of fabricating the same | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| CN208507687U (en) | A kind of interdigital back contacts hetero-junctions monocrystalline silicon battery | |
| CN208521952U (en) | A kind of back contacts hetero-junctions n type single crystal silicon solar cell | |
| CN102738289A (en) | Heterojunction solar cell and manufacturing method thereof | |
| KR20130042435A (en) | Photoelectric device | |
| CN102263156A (en) | Technology for improving conversion efficiency of solar photovoltaic battery | |
| CN110600577A (en) | Heterojunction solar cell and preparation method thereof | |
| CN103227228A (en) | P-type silicon substrate heterojunction cell | |
| CN104282772A (en) | Positive electrode solar crystalline silicon battery with four main grid lines | |
| CN209249469U (en) | A kind of heterojunction solar battery | |
| CN108666387B (en) | Back contact heterojunction N-type monocrystalline silicon solar cell | |
| KR20130061346A (en) | Solar cell and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190219 Effective date of abandoning: 20240130 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20190219 Effective date of abandoning: 20240130 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |