CN209199966U - A kind of low cost p-type all back-contact electrodes crystal silicon solar battery - Google Patents
A kind of low cost p-type all back-contact electrodes crystal silicon solar battery Download PDFInfo
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- CN209199966U CN209199966U CN201821819470.0U CN201821819470U CN209199966U CN 209199966 U CN209199966 U CN 209199966U CN 201821819470 U CN201821819470 U CN 201821819470U CN 209199966 U CN209199966 U CN 209199966U
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Abstract
The utility model relates to technical field of solar cells, especially a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery；Including substrate, substrate uses p type single crystal silicon piece, the back side of substrate includes transmitting tie region and back surface field area, there is one layer of tunnel oxide outside transmitting tie region, there is one layer of layer polysilicon film outside tunnel oxide, there is one layer of backside oxide aluminum film layer outside back surface field area and layer polysilicon film, there is one layer of front aluminum oxide film layer in the front of substrate, there are one layer of back side silicon nitride silicon membrane layer and front side silicon nitride silicon membrane layer outside backside oxide aluminum film layer and front aluminum oxide film layer respectively, there is sintering aluminium paste layer in back surface field area, sintering aluminium paste layer passes through aluminum oxide film layer and silicon nitride film layer infiltrates into substrate, transmitting tie region has silver paste sinter layer, silver paste sinter layer passes through silicon nitride film layer and aluminum oxide film layer；The all back-contact electrodes efficiency of solar cell of the utility model is high, and silver paste dosage is few, and at low cost without expensive process, battery productions such as boron diffusions.
Description
Technical field
The present invention relates to technical field of solar cells, especially a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery.
Background technique
In recent years, passivation contact technique has received widespread attention in crystal-silicon solar cell field, it is considered to be after
Most it is hopeful a kind of high-efficiency battery technology of industrialization after PERC.There is electrode using passivation contact technique, two sides at present
Battery peak efficiency is the N-type cell created by German Fu Langen He Fei solar energy system research institute, efficiency 25.8%；And it adopts
P-type all back-contact electrodes solar cell peak efficiency with passivation contact technique is even more to have reached 26.1%.The passivation contact of the two is adopted
With tunnelling silicon dioxide layer, and the polysilicon membrane being superimposed upon in tunnelling silicon dioxide layer.Polysilicon membrane is prepared at present
Method specifically includes that (1) deposition intrinsic amorphous silicon layer first, then realizes doped p-type or N-shaped by diffusion or ion implanting
Microcrystal silicon；(2) doping type amorphous silicon layer is deposited first, then carries out high annealing.No matter the polysilicon membrane of which kind of method preparation
All there is stronger parasitic light absorption, therefore cell backside can only be placed in.And after polysilicon membrane is placed in cell backside, often
Back metal cannot be realized with aluminium paste again, back side aluminium paste, which is simply changed to silver paste or silver-colored aluminium paste, will be faced with silver paste dosage
The problem of multiplication.And the problems such as aluminium paste is due to broadening, aluminum particle is big, is not suitable for battery front side yet.In order to introduce passivation contact
Keep silver paste dosage constant while technology, the present invention dexterously devises a kind of all back-contact electrodes solar cell, in cell backside
It is graphically etched after whole face deposited polycrystalline silicon thin film, while realizing the contact passivation of battery cathode, anode still be can be used
Aluminium paste metallizes to realize, to save silver paste dosage, reduces battery production cost.
Summary of the invention
The object of the present invention is to provide inexpensive p-type all back-contact electrodes crystal silicon solar batteries, and the solar cell is in cell backside
It is graphically etched after whole face deposited polycrystalline silicon thin film, while realizing the contact passivation of battery cathode, anode still be can be used
Aluminium paste metallizes to realize, to save silver paste dosage, reduces battery production cost.
In order to solve the above technical problems, The technical solution adopted by the invention is as follows:
A kind of low cost p-type all back-contact electrodes crystal silicon solar battery, including substrate, the substrate use p type single crystal silicon piece, institute
The back side for stating substrate includes transmitting tie region and back surface field area, there is one layer of tunnel oxide, the tunnel outside the transmitting tie region
Wearing has one layer of layer polysilicon film outside oxide layer, there is one layer of backside oxide aluminium film outside the back surface field area and layer polysilicon film
Layer, there are one layer of front aluminum oxide film layer, the backside oxide aluminum film layer and front aluminum oxide film in the front of the substrate
Layer is outer one layer of back side silicon nitride silicon membrane layer and front side silicon nitride silicon membrane layer respectively, and there are sintering aluminium paste layer, institute in the back surface field area
It states sintering aluminium paste layer to infiltrate into substrate across aluminum oxide film layer and silicon nitride film layer, the transmitting tie region has silver paste burning
Layer is tied, silver paste sinter layer passes through silicon nitride film layer and aluminum oxide film layer.
Further, the front of the p type single crystal silicon piece is pyramid shape flannelette, and the back side is polished plane.
Further, the layer polysilicon film is N-shaped layer polysilicon film.
Further, the thickness 1-2nm of the tunnel oxide.
Further, the aluminum oxide film layer with a thickness of 3-12nm.
Further, the front side silicon nitride silicon with a thickness of 70-85nm, back side silicon nitride silicon with a thickness of 70-150nm, just,
The refractive index of back side silicon nitride silicon is 1.9-2.1.
Further, the printing width of the sintering aluminium paste layer is 50-300 microns, and printing height is 5-30 microns.
It is using the beneficial effect of technical solution of the present invention:
1, the present invention uses p type single crystal silicon piece for substrate, and back surface field area is sintered to form local Al-BSF using aluminium paste and silicon,
To form Ohmic contact, without diffusion, processing step is reduced.In addition, overleaf transmitting tie region is subtracted using passivation contact structures
Few metal area is compound.Tubular type ALD equipment double-sided deposition aluminium oxide is dexterously used, while to battery front surface, back surface field area shape
It is passivated at perfection.
2, battery of the invention is a kind of all back-contact electrodes crystal silicon solar battery, and front is imitated without metal grid lines, zero shading
Rate is much higher than conventional batteries.In addition, the transmitting tie region of battery of the invention overleaf uses contact passivating structure；The back side
Back surface field area forms local Al-BSF using aluminium paste to realize that electrical contact and metal area are passivated, and saves silver paste dosage；Battery is just
Surface, back side back surface field are all made of aluminium oxide passivation, and the field passivation of aluminium oxide may make the two regions not need to spread to be formed
Field passivation.All back-contact electrodes efficiency of solar cell of the invention is high, and silver paste dosage is few, and without expensive process such as boron diffusions, battery is raw
It produces at low cost.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the structural diagram of the present invention.
In figure: 1- substrate, 2- tunnel oxide, 3- layer polysilicon film, 4- aluminum oxide film layer, 5- silicon nitride film
Layer, 6- Al-BSF, 7- silver electrode.
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates basic structure of the invention, therefore it only shows the composition relevant to the invention.
As shown in Figure 1, a kind of low cost p-type all back-contact electrodes crystal silicon solar battery, specific structure are as follows:
(1) battery is using p type single crystal silicon piece as substrate 1, as shown in figure 1 shown in region 1, silicon chip resistivity 1-5ohm
Cm, front side of silicon wafer are pyramid shape flannelette, and the back side is polished plane；
(2) the transmitting tie region of cell backside is with tunnel oxide 2, as shown in figure 1 shown in region 2, oxidated layer thickness 1-
2nm can form tunneling contact；
(3) overleaf emit in the oxide layer in interface with heavily doped N-shaped layer polysilicon film 3, as shown in figure 13 institute of region
Show, effect is that selectivity transports, to form contact passivating structure in conjunction with tunnel oxide；
(4) the positive back surface of battery is all with aluminum oxide film 4, and as shown in figure 1 shown in region 4, aluminum oxide film 5 is 3-
12nm is rich in hydrogen in aluminium oxide, can be passivated the dangling bonds of silicon face, form good chemical passivation, in addition, aluminium oxide/silicon circle
A large amount of negative electrical charges are contained in face, and perfect field passivation can be formed to p-type silicon surface；
(5) top of the positive backside oxide aluminium film of battery is with silicon nitride film layer 5, as shown in figure 1 shown in region 5, nitrogen
SiClx can obstruct steam etc., to play a protective role to aluminium oxide, in addition, front side silicon nitride silicon can also play anti-reflection work
With, front side silicon nitride silicon with a thickness of 70-85nm, back side silicon nitride silicon with a thickness of 70-150nm, the refractive index of positive back side silicon nitride silicon
All between 1.9-2.1；
(6) electrical contact is realized using aluminium paste in the back surface field area of cell backside, as shown in figure 1 shown in region 6, after aluminium paste sintering
The local Al-BSF of p-type heavy doping can be formed with silicon, to form the field passivation of good Ohmic contact and metallic region, aluminium
The printing width of slurry is 50-300 microns, and printing height is 5-30 microns；
(7) the transmitting tie region of cell backside realizes electrical contact, as shown in figure 1 shown in region 7, silver-colored work content using silver paste
The low and n+ emitter junction of number can form good Ohmic contact, in addition the good conductivity of silver paste, and the alloy temperature of silver and silicon is high,
It is difficult to form silver-colored silicon alloy in common sintering process, therefore the burn-through depth of silver paste is small, it is not easy to destroy connecing for transmitting interface
Touch passivating structure.
Through simulating, low cost p-type all back-contact electrodes crystal silicon solar battery efficiency disclosed by the invention can reach 23.5-24%, far
Higher than current mainstream PERC battery.Compared to PERC battery, the open-circuit voltage of all back-contact electrodes crystal silicon solar battery can be promoted
20-25mV, short-circuit current density can promote 1.5-2mA/cm2.The detailed unit for electrical property parameters of the two is as follows:
| Voc (V) | Jsc (mA/cm2) | FF (%) | Eta (%) | |
| Mainstream PERC battery | 0.6687 | 39.86 | 81.1 | 21.62 |
| The present invention relates to p-type IBC batteries | 0.6902 | 41.78 | 81.8 | 23.6 |
The preparation method of above-mentioned low cost p-type all back-contact electrodes crystal silicon solar battery, steps are as follows:
(1) using p type single crystal silicon piece as silicon substrate, (or making herbs into wool processing) is polished first, solution used is usual
For KOH solution, the KOH solution is generally according to KOH: flocking additive: the ratio of H2O=20:3:160 is prepared, temperature 70-
90 DEG C, wound, three Feng Deng companies when flocking additive is purchased from.Furthermore it can also be replaced with tetramethylammonium hydroxide (TMAH) solution,
Proportion is generally TMAH:H2O=10:90；
(2) it is then cleaned in the HF solution of 2-5%, cleans up silicon chip surface；
(3) LPCVD equipment is used, grows tunnel oxide silicon thin film and intrinsic polysilicon membrane, tunnelling on battery two sides
Silicon oxide thickness<2nm, polysilicon membrane thickness>100nm；
(4) traditional phosphoric diffusion technology is carried out, it is thin to be become N-shaped polysilicon by time 0.5h-2h for intrinsic polysilicon film
Film, sheet resistance control in the range of 50-100ohm/sq；
(5) PECVD device is used, deposits SiNx film in cell backside, thickness control is functioned as in 40-80nm
Mask layer realizes the graphical etching of polysilicon membrane；
(6) silicon nitride in laser ablation cell backside back surface field region is used；
(7) phosphorosilicate glass for removing back surface field region for 1-5 minutes is impregnated first in the HF solution of 1-5% and laser produces
Then raw oxide layer impregnates the 1-5 minutes polysilicon membranes for removing the region, finally in 1- in the KOH solution of 10-30%
The 1-2 minutes tunnel oxides for removing the region are impregnated in 5% HF solution, remove phosphorosilicate glass/polycrystalline of back side back surface field area
When silicon/tunnel oxide, phosphorosilicate glass/polysilicon/tunnel oxide of battery front surface is also removed；
(8) making herbs into wool processing is carried out in KOH solution, to form pyramid structure in battery front side, reaches the effect of sunken light
Fruit.The KOH solution is generally according to KOH: flocking additive: the ratio of H2O=8:1.5:160 is prepared, and temperature is that 80 DEG C of making herbs into wool add
Wound, three Feng Deng companies when agent being added to be purchased from.Furthermore it can also be replaced with tetramethylammonium hydroxide (TMAH) solution, proportion is generally
TMAH:H2O=10:90；
(9) the 15-45 minutes exposure mask silicon nitrides and phosphorus silicon glass to remove back side interface are impregnated in the HF solution of 10-20%
Glass；
(10) tubular type ALD equipment double-sided deposition aluminum oxide film is used, thickness control is in 3-12nm；
(11) respectively in battery front and back cvd nitride silicon thin film, the thickness control of front side silicon nitride silicon is in 70-85nm, back
The thickness control of face silicon nitride all controls between 1.9-2.1 in 70-150nm, the refractive index of positive back side silicon nitride silicon；
(12) laser ablation back side back surface field area partial oxidation aluminium/silicon nitride film is in order to forming local Al-BSF；
(13) back side silk-screen printing, sintering, interface use silver paste, back surface field area use similar to PERC battery back silver+
Aluminium paste structure, aluminium paste are used to form local Al-BSF, and for welding, sintering temperature controls between 700-800 DEG C back silver.
Those of ordinary skill in the art it should be appreciated that, 1, the present invention dexterously devise a kind of full back electricity
Pole solar cell graphically etches after cell backside whole face deposited polycrystalline silicon thin film, realizes the contact passivation of battery cathode
Meanwhile aluminium paste can be used still to realize metallization in anode, to save silver paste dosage, reduces battery production cost.
2, the present invention uses p type single crystal silicon piece for substrate, and back surface field area is sintered to form local Al-BSF using aluminium paste and silicon,
To form Ohmic contact, without diffusion, processing step is reduced.In addition, overleaf transmitting tie region is subtracted using passivation contact structures
Few metal area is compound.Tubular type ALD equipment double-sided deposition aluminium oxide is dexterously used, while to battery front surface, back surface field area shape
It is passivated at perfection.With the promotion of the minority carrier life time of p type single crystal silicon piece, p type single crystal silicon piece can satisfy the demand of IBC battery.
3, battery of the invention is a kind of all back-contact electrodes crystal silicon solar battery, and front is imitated without metal grid lines, zero shading
Rate is much higher than conventional batteries.In addition, the transmitting tie region of battery of the invention overleaf uses contact passivating structure；The back side
Back surface field area forms local Al-BSF using aluminium paste to realize that electrical contact and metal area are passivated, and saves silver paste dosage；Battery is just
Surface, back side back surface field are all made of aluminium oxide passivation, and the field passivation of aluminium oxide may make the two regions not need to spread to be formed
Field passivation.All back-contact electrodes efficiency of solar cell of the invention is high, and silver paste dosage is few, and without expensive process such as boron diffusions, battery is raw
It produces at low cost.
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.It is all in essence of the invention
Within mind and principle, any modification, equivalent substitution, improvement and etc. done be should all be included in the protection scope of the present invention.This
The technical scope of item invention is not limited to the contents of the specification, it is necessary to its technology is determined according to scope of the claims
Property range.
Claims (7)
1. a kind of low cost p-type all back-contact electrodes crystal silicon solar battery, it is characterised in that: including substrate, the substrate uses p-type list
Crystal silicon chip, the back side of the substrate include transmitting tie region and back surface field area, there is one layer of tunnel oxide outside the transmitting tie region
Layer, the tunnel oxide have one layer of layer polysilicon film outside, there is one layer of back side outside the back surface field area and layer polysilicon film
There are one layer of front aluminum oxide film layer, the backside oxide aluminum film layer and front in aluminum oxide film layer, the front of the substrate
There are one layer of back side silicon nitride silicon membrane layer and front side silicon nitride silicon membrane layer respectively outside aluminum oxide film layer, there is sintering in the back surface field area
Aluminium paste layer, the sintering aluminium paste layer passes through aluminum oxide film layer and silicon nitride film layer infiltrates into substrate, the transmitting interface
There is silver paste sinter layer in domain, and silver paste sinter layer passes through silicon nitride film layer and aluminum oxide film layer.
2. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: the p-type
The front of monocrystalline silicon piece is pyramid shape flannelette, and the back side is polished plane.
3. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: described more
Layer polycrystal silicon film is N-shaped layer polysilicon film.
4. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: the tunnel
Wear the thickness 1-2nm of oxide layer.
5. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: the oxygen
Change aluminum film layer with a thickness of 3-12nm.
6. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: it is described just
Face silicon nitride with a thickness of 70-85nm, back side silicon nitride silicon with a thickness of 70-150nm, the refractive index of front and back silicon nitride is
1.9-2.1。
7. a kind of inexpensive p-type all back-contact electrodes crystal silicon solar battery according to claim 1, it is characterised in that: the burning
The printing width for tying aluminium paste layer is 50-300 microns, and printing height is 5-30 microns.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140646A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN113690334A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | P-type heterojunction all-back-electrode contact crystalline silicon photovoltaic cell and preparation method thereof |
-
2018
- 2018-11-06 CN CN201821819470.0U patent/CN209199966U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113140646A (en) * | 2021-04-23 | 2021-07-20 | 南通天晟新能源科技有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN113690334A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | P-type heterojunction all-back-electrode contact crystalline silicon photovoltaic cell and preparation method thereof |
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