CN107275432B - Crystalline silicon solar cell and preparation method thereof - Google Patents
Crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN107275432B CN107275432B CN201710662275.5A CN201710662275A CN107275432B CN 107275432 B CN107275432 B CN 107275432B CN 201710662275 A CN201710662275 A CN 201710662275A CN 107275432 B CN107275432 B CN 107275432B
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 46
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 239000011267 electrode slurry Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002003 electrode paste Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000009977 dual effect Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 22
- 230000006798 recombination Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a crystalline silicon solar cell and a preparation method thereof, wherein the crystalline silicon solar cell comprises a silicon substrate, an emitter, a back surface field and metal electrodes respectively arranged on the emitter and the back surface field, the emitter and the back surface field are positioned at two sides of the silicon substrate, the emitter and/or the back surface field comprises a non-metal area and a metal area for arranging a metal electrode, and is characterized in that a passivation layer and a heavily doped polysilicon layer are sequentially arranged between the metal area on the emitter and/or the back surface field and the metal electrode. The strong absorption characteristic of the functional film formed by the passivation layer and the heavily doped polysilicon layer in the invention does not influence the optical absorption of the current structure, thereby ensuring the collection efficiency of carriers, avoiding parasitic absorption and realizing the dual advantages of high current and high open voltage.
Description
Technical Field
The invention belongs to the technical field of solar cell production and processing, and particularly relates to a crystalline silicon solar cell and a preparation method thereof.
Background
A solar cell is a device that converts light energy into electrical energy using a photoelectric effect or a photochemical effect, and is also called a solar chip or a photovoltaic cell. Solar cells are mainly classified into two main types, crystalline silicon solar cells and thin film solar cells, according to the materials and techniques used. Currently, crystalline silicon batteries take absolute advantage from the global solar cell product structure and from the China with the largest solar cell yield. Crystalline silicon solar cells are devices that directly convert light energy into electrical energy by a photoelectric effect or a photochemical effect, and are devices that convert solar radiation light into electrical energy by a semiconductor substance using a photoelectric conversion principle, and this photoelectric conversion process is generally called a "photovoltaic effect", and therefore, solar cells are also called "photovoltaic cells".
Interface recombination of metal regions of crystalline silicon solar cells has become an important factor restricting the improvement of solar cell efficiency. At present, when a crystalline silicon solar cell is generally prepared, silver paste is printed on silicon nitride of the solar cell by screen printing, and then the silver paste is sintered at high temperature to burn through the silicon nitride to form ohmic contact with an emitter of the cell. However, a metal-semiconductor contact interface is easily formed between silver and the emitter, and the interface becomes a serious carrier recombination center, reducing the conversion efficiency of the solar cell.
At present, the academic world refers to the development experience of semiconductors to develop heterojunction solar cells, amorphous silicon films are deposited on crystalline silicon substrates, transparent conductive films are deposited on the amorphous silicon films, and non-burnt-through low-temperature silver paste is screen-printed on the transparent conductive films. Although the amorphous silicon thin film and the transparent conductive thin film solve the passivation problem of the metal region, the carrier collection efficiency is not high, and parasitic absorption is formed at the same time, so that the short-circuit current of the battery is not high.
Disclosure of Invention
In order to solve the above problems, the present invention provides a crystalline silicon solar cell that not only improves the efficiency of the cell, but also suppresses the formation of a direct metal-semiconductor interface, avoids the parasitic absorption of light, and at the same time improves the carrier collection efficiency of the cell.
The technical scheme of the invention is as follows: the utility model provides a crystalline silicon solar cell, includes silicon substrate, projecting pole, back field and sets up the metal electrode on projecting pole and back field respectively, projecting pole and back field are located the silicon substrate both sides, projecting pole and/or back field include non-metal region and be used for setting up the metal region of metal electrode, passivation layer and heavily doped polycrystalline silicon layer have been set gradually between metal region to the metal electrode on projecting pole and/or the back field.
According to the invention, the passivation layer and the heavily doped polysilicon layer are arranged on the emitter and the back electric field, so that ohmic contact is formed between the metal electrode and the heavily doped polysilicon layer, the metal electrode can not directly contact the emitter and the back electric field, the surface recombination rate of a metal region is reduced, and the open-circuit voltage of the battery is improved.
Preferably, the silicon substrate is made of a P-type or N-type silicon material, and the resistivity of the silicon substrate is 0.01-1000 Ω cm.
Preferably, the passivation layer has a thickness of 0.1 to 1000 angstroms and a band gap width of 1 to 10eV.
Preferably, the passivation layer is made of one or more materials selected from silicon oxide, silicon nitride or amorphous silicon.
Preferably, the doping type of the heavily doped polysilicon layer is the same as the doping type of the emitter and/or the back electric field.
Preferably, the thickness of the heavily doped polysilicon layer is 1-10000 nm, and the band gap width is 1.1-2 eV.
Preferably, a thin film layer rich in hydrogen is arranged between the heavily doped polysilicon layer and the metal electrode, and the thickness of the thin film layer is 0.1-10000 nm. The film layer in the invention reduces the surface recombination rate of the metal area and the nonmetal area.
Preferably, the film layer is made of one or more materials selected from silicon nitride, silicon oxide or aluminum oxide.
The invention also provides a preparation method of the crystalline silicon solar cell, which comprises the following steps:
(a) Doping is carried out on the silicon substrate to form a uniform emitter electrode and/or a back surface field, and a non-metal area and a metal area for arranging a metal electrode are divided on the emitter electrode and/or the back surface field;
(b) Firstly forming a passivation layer on a metal region and a nonmetal region of an emitter and/or a back surface field through thermal oxidation, then depositing a heavily doped polysilicon layer on the passivation layer, then forming a mask layer on the heavily doped polysilicon layer positioned at the metal region through screen printing, then etching the passivation layer and the heavily doped polysilicon layer of the nonmetal region which is not protected by the mask layer, and finally removing the mask layer;
or forming a passivation layer on the metal region of the emitter and/or the back surface field through thermal oxidation, and then depositing a heavily doped polysilicon layer on the passivation layer;
(c) And (3) screen printing metal electrode slurry on the heavily doped polysilicon layer, and sintering to obtain the metal electrode.
When the crystalline silicon solar cell is prepared, a metal area for setting a metal electrode is designed in advance, then a passivation layer and a heavily doped polysilicon layer can be set in two modes, and LPCVD can be used for deposition when the heavily doped polysilicon layer is set. The first mode is that after a passivation layer and a heavily doped polysilicon layer are arranged on a metal area and a non-metal area, a mask layer is arranged on the heavily doped polysilicon layer positioned on the metal area, wherein the buried layer can be made of ink materials, after the mask layer is formed, the passivation layer and the heavily doped polysilicon layer of the non-metal area which are not protected by the mask layer are etched, the passivation layer and the heavily doped polysilicon layer can be etched by KOH and HF respectively, and finally the mask layer is removed.
The invention can also adopt another mode, namely, only the passivation layer and the heavily doped polysilicon layer are arranged on the metal region, and the step of arranging the mask layer can be reduced in the mode.
After the passivation layer and the heavily doped polysilicon layer are provided in either of the above two ways, a high temperature anneal may be performed to activate the dopant sources in the polysilicon.
Preferably, in the step (c), the thin film layer is deposited on the heavily doped polysilicon layer and/or the nonmetallic region, then the metal electrode paste is screen printed on the thin film layer positioned on the metallic region, and finally the metal electrode is obtained by sintering. The invention can also adopt PECVD to deposit a film layer on the heavily doped polysilicon layer and the non-metal area, after the film layer is deposited, the metal electrode slurry is printed by silk screen, and finally, the metal electrode slurry for forming the metal electrode is sintered at high temperature to generate chemical reaction with the film layer, and the film layer is etched, so that good ohmic contact is formed with the heavily doped polysilicon layer below the film layer.
Compared with the prior art, the invention has the beneficial effects that:
(1) The metal electrode is not in direct contact with the emitter and the back surface field, the metal areas of the emitter and the back surface field are passivated by the passivation layer, the surface recombination rate is reduced, good passivation of the emitter and the metal areas is formed, the non-metal areas can be passivated by the film layer, and the surface recombination rate is reduced. The photo-generated carriers are effectively collected through the uniform emitter, and the passivation layer and the heavily doped polycrystalline silicon layer are arranged below the metal electrode, so that the passivation layer and the heavily doped polycrystalline silicon layer can not absorb incident light due to shielding of the metal electrode above, and therefore the strong absorption characteristic of the functional film formed by the passivation layer and the heavily doped polycrystalline silicon layer can not influence the optical absorption of the current structure, the collection efficiency of the carriers is ensured, parasitic absorption is avoided, and the dual advantages of high current and high open voltage are realized.
(2) The preparation method of the crystalline silicon solar cell is simple to operate and suitable for large-scale production.
Drawings
FIG. 1 shows silicon according to the present invention a schematic structural diagram of the substrate.
Fig. 2 is a schematic diagram of the structure of the present invention after forming an emitter on a silicon substrate.
Fig. 3 is a schematic view of the structure of the present invention after a passivation layer is disposed on the emitter.
Fig. 4 is a schematic structural diagram of the passivation layer after the heavily doped polysilicon layer is disposed thereon according to the present invention.
Fig. 5 is a schematic diagram of the structure of the present invention after the mask layer is provided on the heavily doped polysilicon layer.
FIG. 6 shows passivation of etched non-metallic regions in accordance with the present invention schematic structural diagram after the layer and heavily doped polysilicon layer.
Fig. 7 is a schematic structural diagram of the present invention after removing the mask layer.
FIG. 8 is a schematic view of the structure of the present invention after the thin film layer is provided.
Fig. 9 is a schematic view of the structure after the metal electrode is formed by screen printing.
Wherein, 1, a silicon substrate; 2. an emitter; 3. a passivation layer; 4. heavily doped polysilicon layer; 5 a mask layer; 6. a thin film layer; 7. a metal electrode.
Detailed Description
Example 1
A method of making a crystalline silicon solar cell comprising the steps of:
(a) P-type monocrystalline silicon is used as a silicon substrate 1, see fig. 1, phosphorus diffusion is carried out on the front surface, and an emitter 2 is formed, see fig. 2. The composite current density of the emitter electrode 2 of the layer is 30fA/cm 2 Square resistance isThe emitter 2 has a function of absorbing light, generating photogenerated carriers, and collecting electrons.
(b) A thermal oxide layer (passivation layer 3) with a thickness of 2nm is formed on the emitter 2 by thermal oxidation, see fig. 3, a phosphorus doped polysilicon layer (heavily doped polysilicon layer 4) is deposited on the passivation layer 3 by LPCVD, see fig. 4, and a high temperature anneal is performed at 1000 ℃ for 60min to activate the doping source in the polysilicon.
(c) A mask layer 5 formed of ink having a certain pattern is formed over the heavily doped polysilicon layer 4 using screen printing ink, see fig. 5, and the passivation layer 3 and the heavily doped polysilicon layer 4, which are not protected by the mask layer, are etched using KOH and HF, respectively, see fig. 6. The mask layer is then removed, see fig. 7.
(d) A silicon nitride film (film layer 6) is deposited above the structure by PECVD, see fig. 8, silver paste is screen printed on the functional laminated film consisting of the passivation layer 3 and the heavily doped polysilicon layer 4 by screen printing, and a silver electrode (metal electrode 7) is formed by high temperature sintering at 900 ℃, wherein the silver paste chemically reacts with the silicon nitride film 6, etching the silicon nitride film 6, and forming good ohmic contact with the underlying heavily doped polysilicon layer 4, see fig. 9.
The metal electrode 7 is not in direct contact with the emitter electrode 2, so that the emitter electrode 2 of the metal area for arranging the metal electrode is passivated by a thermal oxidation layer, the surface recombination rate of the emitter electrode can be as low as 30cm/s, the emitter electrodes of other areas are passivated by a silicon nitride film, the surface recombination rate of the emitter electrode can be as low as 20cm/s, and good passivation of the emitter electrode and the metal area is formed. Meanwhile, the emitter 2 effectively collects photo-generated carriers, the functional laminated film formed by the passivation layer 3 and the heavily doped polysilicon layer 4 is only arranged below the metal electrode, and incident light cannot be absorbed due to shielding of the metal electrode above the functional laminated film, so that the strong absorption characteristic of the functional laminated film cannot influence the optical absorption of the current structure, and the dual advantages of high current and high open voltage are realized.
Claims (10)
1. The crystalline silicon solar cell comprises a silicon substrate, an emitter, a back surface field and metal electrodes respectively arranged on the emitter and the back surface field, wherein the emitter and the back surface field are positioned at two sides of the silicon substrate, and the emitter and/or the back surface field comprises a non-metal area and a metal area for arranging the metal electrodes; a thin film layer rich in hydrogen is arranged between the heavily doped polysilicon layer and the metal electrode.
2. The crystalline silicon solar cell of claim 1, wherein the silicon substrate is made of a P-type or N-type silicon material, and the silicon substrate has a resistivity of 0.01 to 1000 Ω cm.
3. The crystalline silicon solar cell of claim 1 wherein the passivation layer has a thickness of 0.1 to 1000 angstroms and a band gap width of 1 to 10eV.
4. The crystalline silicon solar cell of claim 1, wherein the passivation layer is made of one or more materials of silicon oxide, silicon nitride, and amorphous silicon.
5. The crystalline silicon solar cell of claim 1, wherein the heavily doped polysilicon layer has the same doping type as the emitter and/or back electric field.
6. The crystalline silicon solar cell of claim 1, wherein the heavily doped polysilicon layer has a thickness of 1 to 10000nm and a band gap width of 1.1 to 2eV.
7. The crystalline silicon solar cell of claim 1, wherein the thin film layer has a thickness of 0.1 to 10000nm.
8. The crystalline silicon solar cell of claim 7, wherein the thin film layer is made of one or more materials selected from the group consisting of silicon nitride, silicon oxide and aluminum oxide.
9. A method of producing a crystalline silicon solar cell according to any one of claims 1 to 8, comprising the steps of:
(a) Doping is carried out on the silicon substrate to form a uniform emitter electrode and/or a back surface field, and a non-metal area and a metal area for arranging a metal electrode are divided on the emitter electrode and/or the back surface field;
(b) Firstly forming a passivation layer on a metal region and a nonmetal region of an emitter and/or a back surface field through thermal oxidation, then depositing a heavily doped polysilicon layer on the passivation layer, then forming a mask layer on the heavily doped polysilicon layer positioned at the metal region through screen printing, then etching the passivation layer and the heavily doped polysilicon layer of the nonmetal region which is not protected by the mask layer, and finally removing the mask layer;
or forming a passivation layer on the metal region of the emitter and/or the back surface field through thermal oxidation, and then depositing a heavily doped polysilicon layer on the passivation layer;
the passivation layer and the heavily doped polysilicon layer are positioned right below the metal electrode and have the same area as the metal electrode;
(c) And (3) screen printing metal electrode slurry on the heavily doped polysilicon layer, and sintering to obtain the metal electrode.
10. The method of claim 9, wherein in the step (c), a thin film layer is deposited on the heavily doped polysilicon layer and/or the non-metal region, then a metal electrode paste is screen-printed on the thin film layer located on the metal region, and finally the metal electrode is obtained by sintering.
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| CN108231954B (en) * | 2018-01-03 | 2019-10-11 | 维科诚（苏州）光伏科技有限公司 | A kind of preparation method of solar battery |
| CN109494261B (en) * | 2018-10-19 | 2024-06-21 | 晶澳（扬州）太阳能科技有限公司 | Silicon-based solar cell, preparation method and photovoltaic module |
| CN110120434B (en) * | 2019-06-18 | 2024-03-26 | 合肥晶澳太阳能科技有限公司 | Battery piece and preparation method thereof |
| CN110571299B (en) * | 2019-08-29 | 2021-10-01 | 东方日升（常州）新能源有限公司 | Self-aligned buried gate passivation contact crystalline silicon solar cell and preparation method thereof |
| CN111180555B (en) * | 2020-03-04 | 2022-05-27 | 泰州中来光电科技有限公司 | Preparation method of passivated contact battery based on PERC |
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| CN101707217A (en) * | 2009-11-05 | 2010-05-12 | 复旦大学 | Solar cell and preparation method thereof |
| CN102460715A (en) * | 2009-04-21 | 2012-05-16 | 泰特拉桑有限公司 | High-efficiency solar cell structures and methods of manufacture |
| CN106449800A (en) * | 2016-12-07 | 2017-02-22 | 常州天合光能有限公司 | Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof |
| CN206976375U (en) * | 2017-08-04 | 2018-02-06 | 常州天合光能有限公司 | A kind of crystal silicon solar energy battery |
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|---|---|---|---|---|
| CN102460715A (en) * | 2009-04-21 | 2012-05-16 | 泰特拉桑有限公司 | High-efficiency solar cell structures and methods of manufacture |
| CN101707217A (en) * | 2009-11-05 | 2010-05-12 | 复旦大学 | Solar cell and preparation method thereof |
| CN106449800A (en) * | 2016-12-07 | 2017-02-22 | 常州天合光能有限公司 | Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof |
| CN206976375U (en) * | 2017-08-04 | 2018-02-06 | 常州天合光能有限公司 | A kind of crystal silicon solar energy battery |
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