CN107275432A - A kind of crystal silicon solar energy battery and preparation method thereof - Google Patents
A kind of crystal silicon solar energy battery and preparation method thereof Download PDFInfo
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- CN107275432A CN107275432A CN201710662275.5A CN201710662275A CN107275432A CN 107275432 A CN107275432 A CN 107275432A CN 201710662275 A CN201710662275 A CN 201710662275A CN 107275432 A CN107275432 A CN 107275432A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 229920005591 polysilicon Polymers 0.000 claims abstract description 50
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 239000011267 electrode slurry Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- 241000720974 Protium Species 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000005001 laminate film Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention discloses a kind of crystal silicon solar energy battery and preparation method thereof, the crystal silicon solar energy battery includes silicon substrate, emitter stage, back surface field and the metal electrode being respectively arranged on emitter stage and back surface field, the emitter stage and back surface field are located at silicon substrate both sides, the emitter stage and/or back surface field include non-metallic regions and the metallic region for setting metal electrode, characterized in that, metallic region on the emitter stage and/or back surface field is to being disposed with passivation layer and heavily doped polysilicon layer between metal electrode.The strong absorption characteristic of the functional film of passivation layer and heavily doped polysilicon layer composition does not interfere with the optical absorption of current structure in the present invention, so as to ensure that the collection efficiency of carrier, it also avoid parasitic absorption, realizes the double dominant of high current and Gao Kai pressures.
Description
Technical field
The invention belongs to manufacture of solar cells processing technique field, and in particular to a kind of crystal silicon solar energy battery and its
Preparation method.
Background technology
Solar cell is that a kind of utilization photoelectric effect or photochemical effect are converted into luminous energy in the device of electric energy, and is claimed
For solar chip or photocell.According to using, material is different with technology, and solar cell is broadly divided into two major classes, and a class is brilliant
Body silicon solar cell a, class is thin-film solar cells.At present either from the point of view of global solar battery product structure, also
It is that crystal silicon battery is in occupation of absolute advantage from the point of view of the maximum China of solar cell yield.Crystal silicon solar batteries are
Directly luminous energy is changed into by photoelectric effect or photochemical effect the device of electric energy, be to make the sun using photoelectricity transformation principle
Radiant light be changed into a kind of device of electric energy by semiconductor substance, this photoelectric conversion process is generally termed " photogenic voltage
Effect ", therefore, solar cell are also known as " photovoltaic cell ".
The Interface composites of crystal silicon solar energy battery metallic region have become the important of restriction efficiency of solar cell lifting
Factor.At present, when generally preparing crystalline silicon day sun energy battery, using the silicon nitride printed thereon for being screen printed onto solar cell
Silver paste, then by high temperature sintering, silver paste burns silicon nitride, the emitter stage formation Ohmic contact with battery.But, silver and transmitting
Metals-semiconductor contacts interface is easily formed between pole, the interface turns into serious Carrier recombination center, reduce sun electricity
The conversion efficiency in pond.
Academic circles at present uses for reference the Experience in Development of semiconductor, heterojunction solar battery is developed, in crystalline silicon silicon substrate
Upper deposition of amorphous silicon films, then deposition of transparent conductive film on the amorphous silicon thin film, then silk-screen printing is non-on nesa coating
Burn-through type low temperature silver paste.Although amorphous silicon membrane and transparent conductive film solve the problem of passivation of metal area, carrier
Collection efficiency is not high, while forming parasitic absorption, battery short circuit electric current is not high.
The content of the invention
In order to solve the above problems, the invention provides a kind of crystal silicon solar energy battery, the efficiency of battery is not only improved,
And suppress to form the formation of direct metal-interface, it is to avoid the parasitic absorption of light is produced, and improves battery simultaneously
Carrier collection efficiency.
The technical scheme is that：A kind of crystal silicon solar energy battery, including silicon substrate, emitter stage, back surface field and
The metal electrode on emitter stage and back surface field is respectively arranged at, the emitter stage and back surface field are located at silicon substrate both sides, described
Emitter stage and/or back surface field include non-metallic regions and the metallic region for setting metal electrode, the emitter stage and/or
Metallic region on back surface field is to being disposed with passivation layer and heavily doped polysilicon layer between metal electrode.
The present invention emitter stage and carry on the back electric field upper setting passivation layer and heavily doped polysilicon layer so that metal electrode with
Ohmic contact is formed between heavily doped polysilicon layer, metal electrode can be not directly contacted with emitter stage and back surface field, reduce gold
Belong to region surface recombination rate, improve battery open circuit voltage.
Preferably, the silicon substrate is made up of p-type or N-type silicon materials, the silicon substrate resistivity is 0.01~
1000Ωcm。
Preferably, the thickness of the passivation layer is 0.1~1000 angstrom, band gap width is 1~10eV.
Preferably, the passivation layer is made up of one or more materials in silica, silicon nitride or non-crystalline silicon.
Preferably, the doping type of the heavily doped polysilicon layer is identical with the doping type of emitter stage and/or back of the body electric field.
Preferably, the thickness of the heavily doped polysilicon layer is 1~10000nm, band gap width is 1.1~2eV.
Preferably, the film layer rich in protium is provided between the heavily doped polysilicon layer and metal electrode, it is described
The thickness of film layer is 0.1~10000nm.Film layer causes metallic region and non-metallic regions surface recombination speed in the present invention
Rate is reduced.
Preferably, the film layer is made up of one or more of materials in silicon nitride, silica or aluminum oxide.
Present invention also offers a kind of preparation method of above-mentioned crystal silicon solar energy battery, comprise the following steps：
(a) it is doped on a silicon substrate, forms uniform emitter stage and/or back surface field, and at emitter stage and/or the back side
Non-metallic regions and the metallic region for setting metal electrode are divided on field；
(b) first aoxidize to form blunt via hot oxygen in the metallic region and non-metallic regions of emitter stage and/or back surface field
Change layer, then deposit heavily doped polysilicon layer over the passivation layer, silk is then used on the heavily doped polysilicon layer at metallic region
Wire mark scopiform into one layer of mask layer, then etch be not masked layer protection non-metallic regions passivation layer and heavily doped polysilicon layer,
Finally remove mask layer；
Or, aoxidize to form passivation layer via hot oxygen in the metallic region of emitter stage and/or back surface field, then in passivation layer
The upper heavily doped polysilicon layer of deposition；
(c) the screen-printed metal electrode slurry on heavily doped polysilicon layer, sintering obtains metal electrode.
When the present invention prepares crystal silicon solar energy battery, the metallic region for setting metal electrode is designed in advance, so
After passivation layer and heavily doped polysilicon layer can be set using two ways, can pass through LPCVD when heavily doped polysilicon layer is set
Deposition.Wherein first way is that passivation layer and heavily doped polysilicon layer are provided with metallic region and non-metallic regions
Afterwards, mask layer is set on the heavily doped polysilicon layer positioned at metallic region, and wherein buried layer can be made of ink material,
After mask layer formation, etching is not masked the passivation layer and heavily doped polysilicon layer of the non-metallic regions of layer protection, etching passivation
KOH can be respectively adopted when layer and heavily doped polysilicon layer and HF is performed etching, mask layer is finally removed.
The present invention can also take another mode, i.e., passivation layer and heavily doped polysilicon are only set in metallic region
Layer, the step of setting mask layer can be reduced using which.
After setting passivation layer and heavily doped polysilicon layer via any one of above two mode, it can carry out
Doped source in high annealing, activation polysilicon.
Preferably, in the step (c), first depositing the film on heavily doped polysilicon layer and/or non-metallic regions
Layer, then the screen-printed metal electrode slurry in the film layer positioned at metallic region, finally sinter and obtain metal electrode.The present invention is also
After deposition film layer, then it can pass through on heavily doped polysilicon layer and non-metallic regions using PECVD deposition films layer
Screen-printed metal electrode slurry, finally by high temperature sintering so that the metal electrode for forming metal electrode is starched and film layer
Chemically react, film layer is etched, so as to form good Ohmic contact with the heavily doped polysilicon layer below film layer.
Compared with prior art, beneficial effects of the present invention are embodied in：
(1) metal electrode is not contacted directly with emitter stage and back surface field, the metallic region quilt of emitter stage and back surface field
Passivation layer is passivated, the reduction of its recombination-rate surface, the good emitter stage of formation and metal area passivation, and non-metallic regions can be by film
Layer passivation, the reduction of its recombination-rate surface.Via the very effective collection photo-generated carrier of uniform emission, due to passivation layer and heavily doped
Polysilicon layer is arranged on below metal electrode so that passivation layer and heavily doped polysilicon layer blocking due to upper metal electrode,
Incident light will not be absorbed, therefore the strong absorption characteristic of the functional film of passivation layer and heavily doped polysilicon layer composition is not interfered with
The optical absorption of current structure, so as to ensure that the collection efficiency of carrier, it also avoid parasitic absorption, realize high current and
Height opens the double dominant of pressure.
(2) preparation method of crystal silicon solar energy battery of the present invention is simple to operate, is suitably applied large-scale production.
Brief description of the drawings
Fig. 1 is the structural representation of silicon substrate in the present invention.
Fig. 2 for the present invention in form the structural representation after emitter stage on a silicon substrate.
Fig. 3 is the structural representation in the present invention on emitter stage after setting passivation layer.
Fig. 4 is sets structural representation after heavily doped polysilicon layer over the passivation layer in the present invention.
Fig. 5 is the structural representation in the present invention after the setting mask layer of heavily doped polysilicon layer mountain.
Fig. 6 is the structural representation after the passivation layer and heavily doped polysilicon layer of etching non-metallic regions in the present invention.
Fig. 7 is the structural representation after removal mask layer in the present invention.
Fig. 8 is the structural representation after setting film layer in the present invention.
Fig. 9 is the structural representation that silk-screen printing is formed after metal electrode.
Wherein, 1, silicon substrate；2nd, emitter stage；3rd, passivation layer；4th, heavily doped polysilicon layer；5 mask layers；6th, film layer；7th, it is golden
Belong to electrode.
Embodiment
Embodiment 1
It is a kind of to prepare a kind of method of crystal silicon solar energy battery, comprise the following steps：
(a) using p-type monocrystalline silicon as silicon substrate 1, see Fig. 1, phosphorus diffusion is carried out in front, form emitter stage 2 and see Fig. 2.The layer
The recombination current density of emitter stage 2 is 30fA/cm2, square resistance isThe emitter stage 2, which has, absorbs light, produces light
Raw carrier, and collect the function of electronics.
(b) hot oxygen is used above in emitter stage 2 to aoxidize to form the thick thermal oxide layers (passivation layer 3) of 2nm, Fig. 3 is seen, in passivation
Using LPCVD deposition phosphorous doped polysilicon layers (heavily doped polysilicon layer 4) on layer 3, Fig. 4 is seen, using 1000 DEG C of progress high annealings
Doped source in 60min, activation polysilicon.
(c) screen printing ink is used, covering for the ink formation with certain figure is formed in the heavily doped top of polysilicon layer 4
Mold layer 5, is shown in Fig. 5, and passivation layer 3 and heavily doped polysilicon layer 4 that KOH and HF etchings are not masked layer protection is respectively adopted, Fig. 6 is seen.
Then mask layer is removed, Fig. 7 is seen.
(d) Fig. 8 is shown in, using silk-screen printing, blunt in superstructure cvd nitride silicon thin film (film layer 6) using PECVD
Change silk-screen printing silver paste on the feature laminate film that layer 3 and heavily doped polysilicon layer 4 are constituted, by 900 DEG C of high temperature sinterings, formed
Silver electrode (metal electrode 7), wherein silver paste chemically react with silicon nitride film 6, etch nitride silicon thin film 6, with lower section
Heavily doped polysilicon layer 4 forms good Ohmic contact, sees Fig. 9.
Metal electrode 7 is not contacted directly with emitter stage 2 so that for the emitter stage 2 for the metallic region for setting metal electrode
Be thermally oxidized layer passivation so that its recombination-rate surface can as little as 30cm/s, and other field emission poles are blunt by silicon nitride film
Change, its recombination-rate surface can as little as 20cm/s, the good emitter stage of formation and metallic region passivation.Meanwhile, emitter stage 2 is effective
Photo-generated carrier is collected, the feature laminate film that passivation layer 3 and heavily doped polysilicon layer 4 are constituted is provided only under metal electrode
Side, due to blocking for upper metal electrode, therefore will not absorb incident light, thus feature laminate film strong absorption characteristic not
The optical absorption of current structure can be influenceed, the double dominant of high current and Gao Kai pressures is realized.
Claims (10)
1. a kind of crystal silicon solar energy battery, including silicon substrate, emitter stage, back surface field and it is respectively arranged at emitter stage and the back side
Metal electrode on field, the emitter stage and back surface field are located at silicon substrate both sides, and the emitter stage and/or back surface field include non-
Metallic region and the metallic region for setting metal electrode, it is characterised in that the gold on the emitter stage and/or back surface field
Category region is to being disposed with passivation layer and heavily doped polysilicon layer between metal electrode.
2. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the silicon substrate is p-type or N-type silicon material
Material is made, and the silicon substrate resistivity is 0.01~1000 Ω cm.
3. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the thickness of the passivation layer is 0.1~
1000 angstroms, band gap width is 1~10eV.
4. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the passivation layer is silica, silicon nitride
Or one or more materials in non-crystalline silicon are made.
5. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the doping type of the heavily doped polysilicon layer
It is identical with emitter stage and/or the doping type for carrying on the back electric field.
6. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the thickness of the heavily doped polysilicon layer is 1
~10000nm, band gap width is 1.1~2eV.
7. crystal silicon solar energy battery as claimed in claim 1, it is characterised in that the heavily doped polysilicon layer and metal electrode
Between be provided with the film layer rich in protium, the thickness of the film layer is 0.1~10000nm.
8. crystal silicon solar energy battery as claimed in claim 7, it is characterised in that the film layer is silicon nitride, silica
Or one or more of materials in aluminum oxide are made.
9. a kind of preparation method of crystal silicon solar energy battery as described in claim 1~8 is any, it is characterised in that including
Following steps：
(a) it is doped on a silicon substrate, forms uniform emitter stage and/or back surface field, and on emitter stage and/or back surface field
Divide non-metallic regions and the metallic region for setting metal electrode；
(b) first aoxidize to form passivation layer via hot oxygen in the metallic region and non-metallic regions of emitter stage and/or back surface field,
Deposit heavily doped polysilicon layer over the passivation layer again, silk-screen printing is then used on the heavily doped polysilicon layer at metallic region
One layer of mask layer is formed, then etches the passivation layer and heavily doped polysilicon layer of the non-metallic regions for not being masked layer protection, is finally gone
Except mask layer；
Or, aoxidize to form passivation layer via hot oxygen in the metallic region of emitter stage and/or back surface field, then sink over the passivation layer
The heavily doped polysilicon layer of product；
(c) the screen-printed metal electrode slurry on heavily doped polysilicon layer, sintering obtains metal electrode.
10. the preparation method of crystal silicon solar energy battery as claimed in claim 9, it is characterised in that in the step (c),
The film layer, then the silk in the film layer positioned at metallic region are first deposited on heavily doped polysilicon layer and/or non-metallic regions
Wire mark brush metal electrode is starched, and finally sintering obtains metal electrode.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231954A (en) * | 2018-01-03 | 2018-06-29 | 维科诚（苏州）光伏科技有限公司 | A kind of preparation method of solar cell |
| CN109494261A (en) * | 2018-10-19 | 2019-03-19 | 晶澳（扬州）太阳能科技有限公司 | Silica-based solar cell and preparation method, photovoltaic module |
| CN110120434A (en) * | 2019-06-18 | 2019-08-13 | 合肥晶澳太阳能科技有限公司 | Cell piece and preparation method thereof |
| CN110571299A (en) * | 2019-08-29 | 2019-12-13 | 东方日升（常州）新能源有限公司 | Self-aligned buried gate passivation contact crystalline silicon solar cell and preparation method thereof |
| CN111180555A (en) * | 2020-03-04 | 2020-05-19 | 泰州中来光电科技有限公司 | Preparation method of passivated contact battery based on PERC |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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