CN210073868U - PERC solar cell with selectively enhanced front passivation - Google Patents
PERC solar cell with selectively enhanced front passivation Download PDFInfo
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- CN210073868U CN210073868U CN201920524007.1U CN201920524007U CN210073868U CN 210073868 U CN210073868 U CN 210073868U CN 201920524007 U CN201920524007 U CN 201920524007U CN 210073868 U CN210073868 U CN 210073868U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model discloses a PERC solar cell of positive passivation of selectivity reinforcing, be equipped with the back passive film on the back of P type silicon in proper order, full aluminium back of the body field or aluminium grid line, back of the body silver electrode, it has the fluting that link up the back passive film to open on the back passive film, P type silicon exposes in the fluting, full aluminium back of the body field or the part that aluminium grid line is located the fluting link to each other with P type silicon, be equipped with the reinforcing passive film on the front of P type silicon in proper order, positive passive film and positive silver electrode, and the reinforcing passive film is located the region that corresponds positive silver electrode on P type silicon, the reinforcing passive film is N type film, be equipped with N type silicon between the regional and the positive passive film outside corresponding positive silver electrode on the front of P type silicon. The passivation effect of the front passivation film and the field passivation effect of the N-type film can greatly reduce the minority carrier recombination rate and enhance the passivation effect; meanwhile, the N-type film has good conductivity to the majority charge, can reduce contact resistance and improve the photoelectric conversion efficiency of the cell.
Description
Technical Field
The utility model relates to a PERC solar cell of positive passivation of selectivity reinforcing.
Background
A crystalline silicon solar cell is a device that efficiently absorbs solar radiation energy and converts light energy into electrical energy using the photovoltaic effect. When sunlight irradiates on a semiconductor P-N junction, a new hole-electron pair is formed, under the action of a P-N junction electric field, holes flow from an N region to a P region, electrons flow from the P region to the N region, and current is formed after a circuit is switched on.
The PERC solar cell generally adopts a conventional front passivation technology, and a layer of silicon nitride is deposited on the front surface of a silicon wafer in a PECVD (plasma enhanced chemical vapor deposition) mode so as to reduce the recombination rate of minority carriers on the front surface and improve the open-circuit voltage and short-circuit current of the crystalline silicon solar cell, thereby improving the photoelectric conversion efficiency of the crystalline silicon solar cell.
However, with the current requirement for the photoelectric conversion efficiency of the crystalline silicon solar cell being higher and higher, how to further improve the photoelectric conversion efficiency of the PERC solar cell is a technical problem to be solved urgently in the industry at present.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a can promote the PERC solar cell of the positive passivation of photoelectric conversion efficiency, with low costs, simple process's selectivity reinforcing of battery.
The purpose of the utility model is realized through the following technical scheme: the PERC solar cell comprises a back silver electrode, an all-aluminum back field or aluminum grid line, a back passivation film, P-type silicon, N-type silicon, a front passivation film and a front silver electrode, wherein the back passivation film, the all-aluminum back field or the aluminum grid line and the back silver electrode are sequentially arranged on the back of the P-type silicon, a groove penetrating through the back passivation film is formed in the back passivation film, the P-type silicon is exposed in the groove, and the part of the all-aluminum back field or the aluminum grid line, which is positioned in the groove, is connected with the P-type silicon, and is characterized in that: the front surface of the P-type silicon is sequentially provided with an enhanced passivation film, a front passivation film and a front silver electrode, the enhanced passivation film is positioned in a region corresponding to the front silver electrode on the P-type silicon, the enhanced passivation film is an N-type thin film, and N-type silicon is arranged between the region corresponding to the front silver electrode on the front surface of the P-type silicon and the front passivation film.
The utility model arranges N-type film on the silicon chip corresponding to the positive silver electrode, the N-type film is heavily doped phosphor source or other source film, the passivation effect of the positive passivation film and the field passivation effect of the heavily doped N-type film can greatly reduce minority carrier recombination rate and enhance passivation effect; meanwhile, the N-type film has good conductivity to the majority charge, the contact resistance can be reduced, and the photoelectric conversion efficiency of the cell is finally improved. The utility model discloses simple structure, preparation simple process, equipment input cost is low, and is compatible good with current production line moreover, can use after carrying out simple transformation to current production line, consequently, is suitable for extensive popularization and applicable.
The utility model discloses be equipped with the tunnel oxide layer that corresponds positive silver electrode region between P type silicon and the N type film, the preferred silicon dioxide of tunnel oxide layer can further improve the passivation effect of positive silver electrode department, reduces minority carrier compound rate to promote the photoelectric conversion efficiency of battery.
The area of tunnel oxide layer and N type film is greater than the area of positive silver electrode to guarantee that positive silver electrode falls completely within N type film region.
Preferably, the N-type film is a polycrystalline silicon film or a silicon carbide film.
Preferably, the thickness of the N-type thin film is 5-50 nm.
Preferably, the thickness of the tunnel oxide layer is 5-10 nm.
Compared with the prior art, the utility model discloses the effect that is showing as follows has:
⑴ the utility model discloses the region that corresponds positive silver electrode on the silicon chip sets up N type film, and the passivation of positive passive film and the field passivation of N type film can greatly reduce minority carrier recombination rate, reinforcing passivation effect, and simultaneously, N type film has good conductibility to many son, can reduce contact resistance, finally improves the photoelectric conversion efficiency of battery.
⑵ the utility model discloses an at the regional deposit tunnel oxide layer of silicon chip and the N type film that the positive electrode corresponds, can further improve the passivation effect at positive electrode department, reduce minority carrier recombination rate to further promote the photoelectric conversion efficiency of battery.
⑶ the utility model discloses simple structure, preparation simple process, the equipment input cost is low, and is compatible good with current production line moreover, can use after carrying out simple transformation to current production line, consequently, is suitable for extensive popularization and is suitable for.
Drawings
The present invention will be described in further detail with reference to the following drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
As shown in fig. 1, is the utility model relates to a selectivity reinforcing front passivation's PERC solar cell, including back silver electrode 1, full aluminium back of the body field or aluminium grid line 2, back passive film 3, P type silicon 5, N type silicon 6, tunnel oxide layer 9, reinforcing passive film 10, front passive film 7 and positive silver electrode 8, front passive film 7 adopts the silicon nitride film, and back passive film 3 is the composite bed of two aluminium oxide membranes and silicon nitride film, and two aluminium oxide membranes are the inlayer, with the contact of P type silicon 5, and the silicon nitride film is outer. The tunnel oxide layer 9 is made of silicon dioxide, and the thickness of the tunnel oxide layer 9 is 5-10 nm. The back surface of the P-type silicon 5 is sequentially provided with a back passivation film 3, an all-aluminum back field or aluminum grid line 2 and a back silver electrode 1, the back passivation film 3 is provided with a slot 11 penetrating through the back passivation film 3, the P-type silicon 5 is exposed in the slot 11, the part of the all-aluminum back field or aluminum grid line 2, which is positioned in the slot 11, is connected with the P-type silicon 5, the front surface of the P-type silicon 5 is sequentially provided with a tunnel oxide layer 9, a reinforced passivation film 10, a front passivation film 7 and a front silver electrode 8, the tunnel oxide layer 9 and the reinforced passivation film 10 are positioned in the region of the P-type silicon 5, which corresponds to the front silver electrode 8, wherein the area of the tunnel oxide layer and the area of the N-type film are larger than the area of the front silver electrode, so that the front silver electrode can completely fall into the area of the N-type. The enhanced passivation film 10 is an N-type film, and in the field, the N-type film refers to a film heavily doped with a phosphorus source or other sources, and specifically may be a polysilicon film or a silicon carbide film, and the thickness of the N-type film is 5-50 nm. N-type silicon 6 is provided between the front passivation film 7 and a region of the P-type silicon 5 other than the corresponding positive silver electrode 8.
A preparation method of the PERC solar cell with the selectively enhanced front passivation comprises the following steps:
⑴, cleaning the P-type silicon 5 by acid or alkali, and forming a silicon dioxide layer with the thickness of 5-10 nm on the front surface of the P-type silicon 5 by using a thermal oxidation process, a thermal nitric acid oxidation process or an ozone oxidation process;
and forming an N-type film with the thickness of 5-50 nm on the silicon dioxide layer by adopting PECVD (plasma enhanced chemical vapor deposition) or LPCVD (low pressure chemical vapor deposition), wherein the process gases are PH3 and SiH4 or PH3, SiH4 and CH 4.
⑵ depositing a silicon nitride film on the N-type film as a protective layer by PECVD;
⑶, performing laser etching on the front surface of the product obtained in step ⑵, and removing the N-type thin film and the silicon nitride film corresponding to the region outside the positive silver electrode 8;
⑷ texturing the front surface of the product obtained in step ⑶, wherein the texturing solution removes silicon dioxide corresponding to the region except the front silver electrode, and the silicon nitride film is not corroded by the texturing solution and protects the N-type film thereunder;
⑸ removing the P-Si glass and peripheral PN junction formed in the diffusion process, and removing the silicon nitride film corresponding to the positive silver electrode region;
⑹ annealing the product from step ⑸;
⑺ deposit a front passivation film 7 and a back passivation film 3 on the front and back sides of the product resulting from step ⑹, respectively.
⑻ laser grooving the back of the product obtained from step ⑺ through the back passivation film 3 to expose the P-type silicon 5 in the groove 11;
⑼ printing silver-backed electrode paste on the back of the product obtained from step ⑻ and drying;
⑽ printing aluminum paste on the back of the product from step ⑼ and drying;
⑾ printing positive silver electrode paste on the N-type film on the front surface of the product obtained in step ⑽ and drying;
⑿ sintering the product obtained in step ⑾ at high temperature to form a back silver electrode, an all-aluminum back field or aluminum grid line and a front silver electrode, wherein the all-aluminum back field or aluminum grid line is connected with the P-type silicon through a slot;
⒀ LID resistant annealing of the product from step ⑿.
The embodiments of the present invention are not limited to the above, according to the above-mentioned contents of the present invention, according to the common technical knowledge and the conventional means in the field, without departing from the basic technical idea of the present invention, the present invention can also make other modifications, replacements or changes in various forms, all falling within the scope of the present invention.
Claims (6)
1. The PERC solar cell comprises a back silver electrode, an all-aluminum back field or aluminum grid line, a back passivation film, P-type silicon, N-type silicon, a front passivation film and a front silver electrode, wherein the back passivation film, the all-aluminum back field or the aluminum grid line and the back silver electrode are sequentially arranged on the back of the P-type silicon, a groove penetrating through the back passivation film is formed in the back passivation film, the P-type silicon is exposed in the groove, and the part of the all-aluminum back field or the aluminum grid line, which is positioned in the groove, is connected with the P-type silicon, and is characterized in that: the front surface of the P-type silicon is sequentially provided with an enhanced passivation film, a front passivation film and a front silver electrode, the enhanced passivation film is positioned in a region corresponding to the front silver electrode on the P-type silicon, the enhanced passivation film is an N-type thin film, and N-type silicon is arranged between the region corresponding to the front silver electrode on the front surface of the P-type silicon and the front passivation film.
2. The selectively enhanced front side passivated PERC solar cell according to claim 1, wherein: and a tunnel oxide layer corresponding to the positive silver electrode region is arranged between the P-type silicon and the N-type film.
3. The selectively enhanced front side passivated PERC solar cell according to claim 2, wherein: the areas of the tunnel oxide layer and the N-type film are larger than the area of the positive silver electrode.
4. The PERC solar cell of claim 3 having selectively enhanced front side passivation, wherein: the N-type film is a polycrystalline silicon film or a silicon carbide film.
5. The PERC solar cell of claim 4 having selectively enhanced front side passivation, wherein: the thickness of the tunnel oxide layer is 5-10 nm.
6. The PERC solar cell with enhanced selectivity for front side passivation according to any of claims 1-5, wherein: the thickness of the N-type film is 5-50 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201920524007.1U CN210073868U (en) | 2019-04-17 | 2019-04-17 | PERC solar cell with selectively enhanced front passivation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920524007.1U CN210073868U (en) | 2019-04-17 | 2019-04-17 | PERC solar cell with selectively enhanced front passivation |
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| CN210073868U true CN210073868U (en) | 2020-02-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212037A (en) * | 2019-04-17 | 2019-09-06 | 天津爱旭太阳能科技有限公司 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
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2019
- 2019-04-17 CN CN201920524007.1U patent/CN210073868U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212037A (en) * | 2019-04-17 | 2019-09-06 | 天津爱旭太阳能科技有限公司 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
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