CN110212037A - The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation - Google Patents
The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation Download PDFInfo
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- CN110212037A CN110212037A CN201910306872.3A CN201910306872A CN110212037A CN 110212037 A CN110212037 A CN 110212037A CN 201910306872 A CN201910306872 A CN 201910306872A CN 110212037 A CN110212037 A CN 110212037A
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 19
- XILIYVSXLSWUAI-UHFFFAOYSA-N 2-(diethylamino)ethyl n'-phenylcarbamimidothioate;dihydrobromide Chemical compound Br.Br.CCN(CC)CCSC(N)=NC1=CC=CC=C1 XILIYVSXLSWUAI-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000004332 silver Substances 0.000 claims abstract description 54
- 229910052709 silver Inorganic materials 0.000 claims abstract description 54
- 229940037003 alum Drugs 0.000 claims abstract description 17
- 230000002708 enhancing effect Effects 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000002003 electrode paste Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation, backside passivation film is successively arranged on the back side of P-type silicon, full Al-BSF or alum gate line, carry on the back silver electrode, the fluting of perforation backside passivation film is overleaf provided on passivating film, P-type silicon is exposed in fluting, the part that full Al-BSF or alum gate line are located in fluting is connected with P-type silicon, enhancing passivating film is successively arranged on the front of P-type silicon, front passivating film and positive silver electrode, and enhancing passivating film is located at the region that positive silver electrode is corresponded in P-type silicon, enhancing passivating film is N-type film, it is corresponded on the front of P-type silicon and is equipped with N-type silicon between the region other than positive silver electrode and front passivating film.The passivation of front passivating film and the field passivation of N-type film can greatly reduce less sub- recombination rate, enhance passivation effect；Meanwhile N-type film has good conductibility for more sons, can reduce contact resistance, improve the photoelectric conversion efficiency of battery.
Description
Technical field
The present invention relates to a kind of PERC solar batteries of Selective long-range DEPT front passivation, are further relating to the Selective long-range DEPT just
The preparation method of the PERC solar battery of face passivation.
Background technique
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, convert optical energy into electricity using photovoltaic effect
The device of energy.When sunlight is radiated in semiconductor P-N junction, new electron-hole pair will form, in the work of P-N junction electric field
Under, hole flows to the area P by the area N, and electronics flows to the area N by the area P, forms electric current after connecting circuit.
PERC solar battery generally uses conventional front passivating technique, heavy using PECVD mode in the front of silicon wafer
One layer of silicon nitride of product promotes open-circuit voltage and the short circuit of crystal silicon solar batteries to reduce few son in the recombination rate of front surface
Electric current, to promote the photoelectric conversion efficiency of crystal silicon solar battery.
But as the requirement currently to crystal silicon solar batteries photoelectric conversion efficiency is higher and higher, how further to mention
The photoelectric conversion efficiency of high PERC solar battery is current industry technical problem urgently to be resolved.
Summary of the invention
The first purpose of this invention is to provide a kind of photoelectric conversion efficiency for being able to ascend battery, at low cost, technique
The PERC solar battery of simple Selective long-range DEPT front passivation.
Second object of the present invention is to provide a kind of PERC solar battery of above-mentioned Selective long-range DEPT front passivation
Preparation method.
The first purpose of this invention is realized by the following technical solutions: a kind of passivation of Selective long-range DEPT front
PERC solar battery, including back silver electrode, full Al-BSF or alum gate line, backside passivation film, P-type silicon, N-type silicon, front passivation
Film and positive silver electrode are successively arranged the backside passivation film, full Al-BSF or alum gate line, back silver on the back side of the P-type silicon
Electrode is provided with the fluting of perforation backside passivation film in the backside passivation film, and the P-type silicon is exposed in the fluting, described
The part that full Al-BSF or alum gate line are located in fluting is connected with the P-type silicon, it is characterised in that: in the front of the P-type silicon
On be successively arranged enhancing passivating film, front passivating film and positive silver electrode, and the enhancing passivating film be located in P-type silicon it is corresponding just silver-colored
The region of electrode, the enhancing passivating film are N-type film, and region other than positive silver electrode and just correspond on the front of P-type silicon
N-type silicon is equipped between the passivating film of face.
The present invention corresponded on silicon wafer positive silver electrode region setting N-type film, N-type film refer to heavy doping phosphorus source or its
The film in its source, the passivation of front passivating film and the field passivation of heavily doped N-type film can greatly reduce few son
Recombination rate enhances passivation effect；Meanwhile N-type film has good conductibility for more sons, can reduce contact electricity
Resistance, the final photoelectric conversion efficiency for improving battery.The configuration of the present invention is simple, preparation process is simple, and equipment input cost is low, and
With existing production line good compatibility, existing production line can be used after being simply transformed, therefore, suitable for being widely popularized and fitting
With.
The present invention is equipped with the tunnel oxidation layer in corresponding positive silver electrode region, tunnel oxygen between the P-type silicon and N-type film
Change the preferred silica of layer, can further improve the passivation effect at positive silver electrode, few sub- recombination rate is reduced, to promote electricity
The photoelectric conversion efficiency in pond.
Preferably, the N-type film is polysilicon membrane or carborundum films.
Preferably, the thickness of the N-type film is 5~50nm.
Preferably, the tunnel oxidation layer with a thickness of 5~10nm.
Second object of the present invention is realized by the following technical solutions: a kind of above-mentioned Selective long-range DEPT front passivation
PERC solar battery preparation method, it is characterised in that the following steps are included:
(1) N-type film is formed on the front of P-type silicon；
(2) the silicon nitride film on N-type film；
(3) to step, (2) the positive of products obtained therefrom carries out laser ablation, and the corresponding positive silver electrode of removal is thin with the N-type of exterior domain
Film and silicon nitride film；
(4) the making herbs into wool in the step (3) front of products obtained therefrom, phosphorous source diffusion form N-type silicon；
(5) the phosphorosilicate glass formed in diffusion process and periphery P N knot are removed, and removes the nitrogen in corresponding positive silver electrode region
SiClx film, then the back side of product is performed etching；
(6) to by step, (5) products obtained therefrom is annealed；
(7) by step, (6) products obtained therefrom deposits front passivating film and backside passivation film respectively on the front and back；
(8) laser slotting penetrates through backside passivation film on by the step (7) back side of products obtained therefrom, is exposed to P-type silicon in fluting；
(9) silver electrode paste and dried in the back up back by step (8) products obtained therefrom；
(10) (9) the back up aluminium paste of products obtained therefrom and dried by step；
(11) positive silver electrode paste is printed on by the step (10) positive N-type film of products obtained therefrom and dry；
(12), to by step, (11) products obtained therefrom carries out high temperature sintering, back silver electrode, full Al-BSF or alum gate line and positive silver are formed
Electrode, full Al-BSF or alum gate line are connected by fluting with P-type silicon；
(13) to by step, (12) products obtained therefrom carries out anti-LID annealing.
The present invention first forms tunnel oxidation layer before forming N-type film on the front of P-type silicon, then in tunnel oxidation
N-type film is formed on layer, and during step making herbs into wool (4), corresponding positive silver electrode is with the tunnel oxidation layer quilt of exterior domain
Removal.Tunnel oxidation layer preferably use that thermal oxidation technology, hot nitric acid oxidation process or ozonation technology formed with a thickness of 5
The silicon dioxide layer of~10nm.
(3) the present invention completes step after, the tunnel oxidation layer in corresponding positive silver electrode region and the area of N-type film are resided in
Greater than the area of positive silver electrode, to guarantee that positive silver electrode is entirely fallen within N-type thin membrane regions.
N-type film of the present invention is prepared using Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method
It forms, process gas is PH3 and SiH4 or PH3, SiH4 and CH4.
Compared with prior art, the present invention has following significant effect:
(1) the present invention corresponds to the region setting N-type film of positive silver electrode, the passivation and N of front passivating film on silicon wafer
The field passivation of type film can greatly reduce less sub- recombination rate, enhance passivation effect；Meanwhile N-type film is for more
There is good conductibility for son, contact resistance can be reduced, the final photoelectric conversion efficiency for improving battery.
(2) the present invention is by can further mention in the corresponding area of silicon wafer depositing tunnel oxide layer of positive electrode and N-type film
Passivation effect at high positive electrode reduces few sub- recombination rate, to further promote the photoelectric conversion efficiency of battery.
(3) the configuration of the present invention is simple, preparation process is simple, and equipment input cost is low, and compatible with existing production line
It is good, existing production line can be used after being simply transformed, therefore, suitable for being widely popularized and being applicable in.
Detailed description of the invention
The following further describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is structural schematic diagram of the invention.
Specific embodiment
As shown in Figure 1, being a kind of PERC solar battery of Selective long-range DEPT front passivation of the present invention, including back silver electrode
1, full Al-BSF or alum gate line 2, backside passivation film 3, P-type silicon 5, N-type silicon 6, tunnel oxidation layer 9, enhancing passivating film 10, front are blunt
Change film 7 and positive silver electrode 8, front passivating film 7 uses silicon nitride film, and backside passivation film 3 is di-aluminium trioxide film and silicon nitride film
Composite layer, di-aluminium trioxide film is internal layer, is contacted with P-type silicon 5, and silicon nitride film is outer layer.Tunnel oxidation layer 9 uses titanium dioxide
Silicon, the thickness of tunnel oxidation layer 9 are 5~10nm.Be successively arranged on the back side of P-type silicon 5 backside passivation film 3, full Al-BSF or
Alum gate line 2 and back silver electrode 1, are overleaf provided with the fluting 11 of perforation backside passivation film 3, P-type silicon 5 is exposed to fluting on passivating film 3
In 11, the part of full Al-BSF or alum gate line 2 in fluting 11 is connected with P-type silicon 5, is successively arranged on the front of P-type silicon 5
Tunnel oxidation layer 9, enhancing passivating film 10, front passivating film 7 and positive silver electrode 8, and tunnel oxidation layer 9 and enhancing passivating film 10
In the region for corresponding to positive silver electrode 8 in P-type silicon 5, wherein the region area of tunnel oxidation layer and N-type film is greater than positive silver electrode
Area, thus guarantee during the preparation process positive silver electrode can entirely fall within N-type thin membrane regions.Enhancing passivating film 10 is
N-type film, in the art, N-type film refer to heavy doping phosphorus source or the film in other sources, concretely polysilicon membrane or carbon
SiClx film, the thickness of N-type film are 5~50nm.The region and front other than positive silver electrode 8 are corresponded on the front of P-type silicon 5
N-type silicon 6 is equipped between passivating film 7.
A kind of preparation method of the PERC solar battery of above-mentioned Selective long-range DEPT front passivation, comprising the following steps:
(1) P-type silicon 5 is cleaned using acid or alkali, use thermal oxidation technology, hot nitric acid oxidation process or ozone oxygen
The silicon dioxide layer that chemical industry skill is formed on the front of P-type silicon 5 with a thickness of 5~10nm；
Using PECVD (plasma reinforced chemical vapour deposition method) or LPCVD (Low Pressure Chemical Vapor Deposition) in dioxy
The N-type film that thickness is 5~50nm is formed on SiClx layer, process gas is PH3 and SiH4 or PH3, SiH4 and CH4.
Using PECVD on N-type film silicon nitride film as protective layer；
(3) to step, (2) the positive of products obtained therefrom carries out laser ablation, and the corresponding positive silver electrode 8 of removal is thin with the N-type of exterior domain
Film and silicon nitride film；
(4) making herbs into wool is carried out in the step (3) front of products obtained therefrom, during making herbs into wool, Woolen-making liquid can be corresponding positive silver electricity
Pole is removed with the silica of exterior domain, and silicon nitride film will not can protect N-type film below by making herbs into wool corrosion；Again
Phosphorous source diffusion forms N-type silicon；
(5) the phosphorosilicate glass formed in diffusion process and periphery P N knot are removed, and removes the nitrogen in corresponding positive silver electrode region
SiClx film；The back side of product is performed etching；
(6) to by step, (5) products obtained therefrom is annealed；
(7) by step, (6) products obtained therefrom deposits front passivating film 7 and backside passivation film 3 respectively on the front and back.
(8) laser slotting penetrates through backside passivation film 3 on by the step (7) back side of products obtained therefrom, and P-type silicon 5 is made to be exposed to fluting
In 11；
(9) silver electrode paste and dried in the back up back by step (8) products obtained therefrom；
(10) (9) the back up aluminium paste of products obtained therefrom and dried by step；
(11) positive silver electrode paste is printed on by the step (10) positive N-type film of products obtained therefrom and dry；
(12), to by step, (11) products obtained therefrom carries out high temperature sintering, back silver electrode, full Al-BSF or alum gate line and positive silver are formed
Electrode, full Al-BSF or alum gate line are connected by fluting with P-type silicon；
(13) to by step, (12) products obtained therefrom carries out anti-LID annealing.
The implementation of the present invention is not limited to this, and above content according to the present invention is known according to the ordinary skill of this field
Knowledge and customary means, under the premise of not departing from above-mentioned basic fundamental thought of the invention, the present invention can also make other a variety of shapes
Modification, replacement or the change of formula, all fall within rights protection scope of the present invention.
Claims (10)
1. a kind of PERC solar battery of Selective long-range DEPT front passivation, including back silver electrode, full Al-BSF or alum gate line, back
Face passivating film, P-type silicon, N-type silicon, front passivating film and positive silver electrode, are successively arranged the back side on the back side of the P-type silicon
Passivating film, full Al-BSF or alum gate line, back silver electrode, are provided with the fluting of perforation backside passivation film in the backside passivation film,
The P-type silicon is exposed in the fluting, and the full Al-BSF or alum gate line are located at the part in slotting and are connected with the P-type silicon,
It is characterized by: being successively arranged enhancing passivating film, front passivating film and positive silver electrode on the front of the P-type silicon, and described
Enhancing passivating film is located at the region that positive silver electrode is corresponded in P-type silicon, and the enhancing passivating film is N-type film, in the front of P-type silicon
N-type silicon is equipped between region and front passivating film other than the upper positive silver electrode of correspondence.
2. the PERC solar battery of Selective long-range DEPT front passivation according to claim 1, it is characterised in that: described
The tunnel oxidation layer in corresponding positive silver electrode region is equipped between P-type silicon and N-type film.
3. the PERC solar battery of Selective long-range DEPT front passivation according to claim 2, it is characterised in that: the N
Type film is polysilicon membrane or carborundum films.
4. the PERC solar battery of Selective long-range DEPT front passivation according to claim 3, it is characterised in that: the N
The thickness of type film is 5~50nm.
5. according to the PERC solar battery of the described in any item Selective long-range DEPT front passivation of claim 2~4, feature exists
In: the thickness of the tunnel oxidation layer is 5~10nm.
6. a kind of preparation method of the PERC solar battery of the passivation of Selective long-range DEPT front described in claim 1, feature exist
In specifically includes the following steps:
(1) N-type film is formed on the front of P-type silicon；
(2) the silicon nitride film on N-type film；
(3) laser ablation carried out to the front of step (2) products obtained therefrom, the corresponding positive silver electrode of removal with the N-type film of exterior domain and
Silicon nitride film；
(4) the making herbs into wool in the step (3) front of products obtained therefrom, phosphorous source diffusion form N-type silicon；
(5) the phosphorosilicate glass formed in diffusion process and periphery P N knot are removed, and removes the silicon nitride in corresponding positive silver electrode region
Film, then the back side of product is performed etching；
(6) to by step, (5) products obtained therefrom is annealed；
(7) by step, (6) products obtained therefrom deposits front passivating film and backside passivation film respectively on the front and back；
(8) laser slotting penetrates through backside passivation film on by the step (7) back side of products obtained therefrom, is exposed to P-type silicon in fluting；
(9) silver electrode paste and dried in the back up back by step (8) products obtained therefrom；
(10) (9) the back up aluminium paste of products obtained therefrom and dried by step；
(11) positive silver electrode paste is printed on by the step (10) positive N-type film of products obtained therefrom and dry；
(12), to by step, (11) products obtained therefrom carries out high temperature sintering, back silver electrode, full Al-BSF or alum gate line and positive silver electrode are formed,
Full Al-BSF or alum gate line are connected by fluting with P-type silicon；
(13) to by step, (12) products obtained therefrom carries out anti-LID annealing.
7. preparation method according to claim 6, it is characterised in that: before forming N-type film, first P-type silicon just
Tunnel oxidation layer is formed on face, then forms N-type film on tunnel oxidation layer, and during step making herbs into wool (4), it is right
Positive silver electrode is answered to be removed with the tunnel oxidation layer of exterior domain.
8. preparation method according to claim 7, it is characterised in that: after completing step (3), reside in corresponding positive silver electrode
The tunnel oxidation layer in region and the area of N-type film are greater than the area of positive silver electrode.
9. preparation method according to claim 8, it is characterised in that: the tunnel oxidation layer uses thermal oxidation technology, heat
Nitric acid oxidation process or ozonation technology are prepared.
10. preparation method according to claim 9, it is characterised in that: the N-type film uses low-pressure chemical vapor deposition
Method or plasma reinforced chemical vapour deposition method are prepared, and process gas is PH3 and SiH4 or PH3, SiH4 and CH4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910306872.3A CN110212037A (en) | 2019-04-17 | 2019-04-17 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910306872.3A CN110212037A (en) | 2019-04-17 | 2019-04-17 | The PERC solar battery and preparation method thereof of Selective long-range DEPT front passivation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110212037A true CN110212037A (en) | 2019-09-06 |
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