CN105244417B - Crystalline silicon solar cell and preparation method thereof - Google Patents
Crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN105244417B CN105244417B CN201510746596.4A CN201510746596A CN105244417B CN 105244417 B CN105244417 B CN 105244417B CN 201510746596 A CN201510746596 A CN 201510746596A CN 105244417 B CN105244417 B CN 105244417B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 149
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 148
- 239000010703 silicon Substances 0.000 claims abstract description 148
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002253 acid Substances 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 21
- 210000002268 wool Anatomy 0.000 claims description 17
- 235000008216 herbs Nutrition 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 7
- 241000931526 Acer campestre Species 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 239000011267 electrode slurry Substances 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229960002050 hydrofluoric acid Drugs 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract description 2
- 239000002003 electrode paste Substances 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a preparation method of a crystalline silicon solar cell. The preparation method comprises the following steps that step one: double-sided polishing is performed on a silicon wafer; step two: laser texturing is performed on the silicon wafer in nitrogen atmosphere, and the nitrogen element is doped in the silicon wafer so that a layer of N-type silicon is formed; step three: the silicon wafer is cleaned by the mixed acid of hydrofluoric acid and hydrochloric acid; step four: PECVD film coating is performed on the front surface of the silicon wafer so that a silicon nitride anti-reflection film is formed; step five: a back electrode and an aluminum back field are printed on the back surface of the silicon wafer; step six: positive electrode paste is printed on the front surface of the silicon wafer so that a positive electrode is formed; and step seven: sintering is performed on the silicon wafer so that a solar cell is formed. Compared with methods in the prior art, texturing and the diffusion technology are combined in one step so that influence of conventional high temperature diffusion on the minority carrier lifetime of the silicon wafer can be avoided, and the problem of etching of partial PN junctions of the edge of the front surface of the silicon wafer caused by the conventional etching technology can also be solved, and thus preparation method of the crystalline silicon solar cell has advantages that photoelectric conversion efficiency of the cell can be enhanced and manufacturing cost of the cell can be reduced.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of crystal silicon solar batteries and preparation method thereof.
Background technology
Crystal silicon solar batteries are that one kind effectively absorbs solar radiant energy, are converted optical energy into using photovoltaic effect
The device of electric energy, when solar irradiation is in quasiconductor P-N junction (P-N Junction), forms new hole-electron to (V-E
Pair), in the presence of P-N junction electric field, hole flows to P areas by N areas, and electronics flows to N areas by P areas, connects after circuit and is just formed
Electric current.
It is six big that the preparation technology of crystal silicon solar batteries is divided into making herbs into wool, diffusion, etching, front plated film, silk screen printing, sintering
Operation.Wherein, the purpose of making herbs into wool is to form rough texturing suede structure in front side of silicon wafer, increases the absorption of sunlight
Area, reduces all being to crystal silicon surface wool manufacturing in the reflectance of sunlight, industry by the way of chemical acid system making herbs into wool.Diffusion
Purpose is to form N-type silicon on the surface of P-type silicon substrate, so as to form the core component-PN junction of battery.All it is using pipe in industry
The mode of formula phosphorus oxychloride High temperature diffusion, diffusion temperature is up to 800 more to be spent, but high temperature can reduce the minority carrier life time of silicon chip, shadow
Ring the photoelectric transformation efficiency of battery.The purpose of etching be remove around silicon chip and the back side PN junction, battery short circuit is prevented, while going
Fall the phosphorosilicate glass of front side of silicon wafer.In industry performed etching using horizontal chemical etching method, front side of silicon wafer edge
Part PN junction is inevitably etched away.
The content of the invention
The technical problem to be solved is, there is provided a kind of crystal silicon solar batteries and preparation method thereof, this
It is bright that making herbs into wool and diffusion technique are merged into into a step, it is to avoid the impact of conventional high temperature diffusion couple silicon chip minority carrier life, also solve
The problem that the part PN junction at the front side of silicon wafer edge that conventional etching process of having determined brings is etched away, with the photoelectricity for improving battery
Conversion efficiency, the advantage for reducing battery manufacture cost.
In order to solve above-mentioned technical problem, the invention provides a kind of preparation method of efficient crystal silicon solar batteries, bag
Include following steps：
Step one：Twin polishing is carried out to silicon chip；
Step 2：To silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N-type will be formed in nitrogen-doping to silicon chip
Silicon；
Step 3：Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Step 4：PECVD plated films are carried out in the front side of silicon wafer, silicon nitride anti-reflection film is formed；
Step 5：Back electrode and aluminum back surface field are printed in silicon chip back side；
Step 6：Anelectrode is formed in front side of silicon wafer print positive electrode slurry；
Step 7：Silicon chip is sintered to form solaode.
Preferably, using NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 10%- to the step one
30%.
Preferably, the step 2 adopts Ultra-Violet Laser in nitrogen atmosphere to front side of silicon wafer making herbs into wool, while forming one layer of N
Type silicon.
Preferably, the nitrogen gas concn is 10kg/L-50kg/L, and optical maser wavelength is 355nm, and laser power is 0.05W-
10W, translational speed is 100mm/s-1000mm/s, and frequency is 10kHz-1000kHz.
Preferably, using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid, the concentration of Fluohydric acid. is the step 3
2.5%-5%, the concentration of hydrochloric acid is 5%-10%.
Preferably, the step 4 adopts the method deposited silicon nitride antireflective film of PECVD, the refractive index of silicon nitride anti-reflection film
For 2.0-2.5, thickness is 50nm-100nm.
Correspondingly, the present invention also provides a kind of crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
Compared with prior art, the present invention has the advantages that：The present invention is in nitrogen atmosphere to front side of silicon wafer system
Floss, obtains the suede structure of extremely low reflectance；During laser scanning, the foreign atom on P-type silicon surface is evaporated, and is adsorbed
Nitrogen molecule, makes P-type silicon surface form one layer of N-type silicon, so as to form PN junction.Because P-type silicon can form dislocation, layer in doping
The various defects such as mistake, laser scanning has also partially removed the defect on P-type silicon surface, has improve minority carrier life time, so as to improve battery
Photoelectric transformation efficiency；In addition, the present invention is after diffusing procedure, it is not necessary to perform etching technique, it is to avoid conventional etching process
The problem that the part PN junction at the front side of silicon wafer edge for bringing is etched away, improves the photoelectric transformation efficiency of battery, reduces battery
Manufacturing cost.
Description of the drawings
Fig. 1 is crystal silicon solar batteries preparation method flow chart of the present invention；
Fig. 2 is the structural representation of crystal silicon solar batteries of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
Step ground is described in detail.
The preparation process of efficient crystal silicon solar batteries of the present invention is specific as follows：
Step S100：Twin polishing is carried out to silicon chip；
Using NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 10%-30% to this step.
Step S101：To silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N will be formed in nitrogen-doping to silicon chip
Type silicon；
This step adopts Ultra-Violet Laser in nitrogen atmosphere to silicon chip laser making herbs into wool, while by nitrogen-doping to silicon chip
Form one layer of N-type silicon；Nitrogen gas concn is 10kg/L-50kg/L, and optical maser wavelength is 355nm, and laser power is 0.05W-10W, is moved
Dynamic speed is 100mm/s-1000mm/s, and frequency is 10kHz-1000kHz.One layer of N-type will be formed in nitrogen-doping to silicon chip
Silicon be different from conventional batteries N-type silicon be doped in silicon chip by P elements, due to nitrogen atomic radius it is little, the shape in silicon structure
Into interstitial impurity atom, diffusion velocity is very slow, forms very shallow PN junction, almost without dead layer；Shallow PN junction can cause little
Few son is compound, improves minority carrier life time, improves the open-circuit voltage and photoelectric transformation efficiency of battery.In addition, nitrogen formed N-type silicon into
This is much lower and nontoxic more than the cost that phosphorus oxychloride prepares N-type silicon, and phosphorus oxychloride is hypertoxic, affects the peace of Workshop Production
Entirely.
Step S102：Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid, the concentration of Fluohydric acid. is 2.5%-5% to this step, hydrochloric acid
Concentration is 5%-10%.
Step S103：PECVD plated films are carried out in the front side of silicon wafer, silicon nitride anti-reflection film is formed；
This step adopts the method deposited silicon nitride antireflective film of PECVD, and the refractive index of silicon nitride anti-reflection film is 2.0-2.5,
Thickness is 50nm-100nm.
Step S104：Back electrode and aluminum back surface field are printed in silicon chip back side；
Step S105：Anelectrode is formed in front side of silicon wafer print positive electrode slurry；
Step S106：Silicon chip is sintered to form solaode.
Compared with prior art, the present invention has the advantages that：The present invention is in nitrogen atmosphere to front side of silicon wafer system
Floss, obtains the suede structure of extremely low reflectance；During laser scanning, the foreign atom on P-type silicon surface is evaporated, and is adsorbed
Nitrogen molecule, makes P-type silicon surface form one layer of N-type silicon, so as to form PN junction.Because P-type silicon can form dislocation, layer in doping
The various defects such as mistake, laser scanning has also partially removed the defect on P-type silicon surface, has improve minority carrier life time, so as to improve battery
Photoelectric transformation efficiency；In addition, the present invention is after diffusing procedure, it is not necessary to perform etching technique, it is to avoid conventional etching process
The problem that the part PN junction at the front side of silicon wafer edge for bringing is etched away, improves the photoelectric transformation efficiency of battery, reduces battery
Manufacturing cost.
As shown in Fig. 2 a kind of crystal silicon solar batteries are wrapped successively from top to bottom obtained in preparation method of the present invention
Anelectrode 1, silicon nitride anti-reflection film 2, N-type silicon 3, P-type silicon substrate 4, aluminum back surface field 5 and back electrode 6 are included, the upper surface of P-type silicon substrate 4 is
Suede structure, N-type silicon 3 covers the suede structure, and silicon nitride anti-reflection film 2 is covered on N-type silicon 3.
Below the present invention is further described with specific embodiment：
Embodiment 1
A kind of preparation method of efficient crystal silicon solar batteries, comprises the following steps：
A. twin polishing is carried out to silicon chip；
Using NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 10% to this step.
B. to silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N-type silicon will be formed in nitrogen-doping to silicon chip；
This step adopts Ultra-Violet Laser in nitrogen atmosphere to front side of silicon wafer making herbs into wool, while by nitrogen-doping to silicon chip
Form one layer of N-type silicon；Nitrogen gas concn is 10kg/L, and optical maser wavelength is 355nm, and laser power is 0.05W, and translational speed is
100mm/s, frequency is 10kHz.
C. using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid, the concentration of Fluohydric acid. is 2.5% to this step, the concentration of hydrochloric acid
For 10%.
D. PECVD plated films are carried out in the front side of silicon wafer, forms silicon nitride anti-reflection film；
This step adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.0, and thickness is 50nm.
E. back electrode and aluminum back surface field are printed in silicon chip back side；
F. anelectrode is formed in front side of silicon wafer print positive electrode slurry；
G. silicon chip is sintered to form solaode.
Embodiment 2
A kind of preparation method of efficient crystal silicon solar batteries, comprises the following steps：
A. twin polishing is carried out to silicon chip；
Using NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 20% to this step.
B. to silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N-type silicon will be formed in nitrogen-doping to silicon chip；
This step adopts Ultra-Violet Laser in nitrogen atmosphere to front side of silicon wafer making herbs into wool, while by nitrogen-doping to silicon chip
Form one layer of N-type silicon；Nitrogen gas concn is 30kg/L, and optical maser wavelength is 355nm, and laser power is 5W, and translational speed is 550mm/
S, frequency is 500kHz.
C. using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid, the concentration of Fluohydric acid. is 3.5% to this step, the concentration of hydrochloric acid
For 7%.
D. PECVD plated films are carried out in the front side of silicon wafer, forms silicon nitride anti-reflection film；
This step adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.3, and thickness is 75nm.
E. back electrode and aluminum back surface field are printed in silicon chip back side；
F. anelectrode is formed in front side of silicon wafer print positive electrode slurry；
G. silicon chip is sintered to form solaode.
Embodiment 3
A kind of preparation method of efficient crystal silicon solar batteries, comprises the following steps：
A. twin polishing is carried out to silicon chip；
Using NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 30% to this step.
B. to silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N-type silicon will be formed in nitrogen-doping to silicon chip；
This step adopts Ultra-Violet Laser in nitrogen atmosphere to front side of silicon wafer making herbs into wool, while by nitrogen-doping to silicon chip
Form one layer of N-type silicon；Nitrogen gas concn is 50kg/L, and optical maser wavelength is 355nm, and laser power is 10W, and translational speed is
1000mm/s, frequency is 1000kHz.
C. using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid, the concentration of Fluohydric acid. is 5% to this step, and the concentration of hydrochloric acid is
5%.
D. PECVD plated films are carried out in the front side of silicon wafer, forms silicon nitride anti-reflection film；
This step adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.5, and thickness is 100nm.
E. back electrode and aluminum back surface field are printed in silicon chip back side；
F. anelectrode is formed in front side of silicon wafer print positive electrode slurry；
G. silicon chip is sintered to form solaode.
It is last to should be noted that above example only to illustrate technical scheme rather than protect to the present invention
The restriction of shield scope, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention
And scope.
Claims (6)
1. a kind of preparation method of crystal silicon solar batteries, it is characterised in that comprise the following steps：
Step one：Twin polishing is carried out to silicon chip；
Step 2：To silicon chip laser making herbs into wool in nitrogen atmosphere, while one layer of N-type silicon will be formed in nitrogen-doping to silicon chip,
The nitrogen gas concn is 10kg/L-50kg/L, and optical maser wavelength is 355nm, and laser power is 0.05W-10W, and translational speed is
100mm/s-1000mm/s, frequency is 10kHz-1000kHz；
Step 3：Using Fluohydric acid. and the mixed acid cleaning silicon chip of hydrochloric acid；
Step 4：PECVD plated films are carried out in the front side of silicon wafer, silicon nitride anti-reflection film is formed；
Step 5：Back electrode and aluminum back surface field are printed in silicon chip back side；
Step 6：Anelectrode is formed in front side of silicon wafer print positive electrode slurry；
Step 7：Silicon chip is sintered to form solaode.
2. as claimed in claim 1 a kind of preparation method of crystal silicon solar batteries, it is characterised in that the step one is adopted
To silicon chip twin polishing, the concentration of NaOH solution is 10%-30% to NaOH solution.
3. as claimed in claim 1 a kind of preparation method of crystal silicon solar batteries, it is characterised in that the step 2 is using purple
Outer laser in nitrogen atmosphere to front side of silicon wafer making herbs into wool, while formed one layer of N-type silicon.
4. as claimed in claim 1 a kind of preparation method of crystal silicon solar batteries, it is characterised in that the step 3 adopts hydrogen
The mixed acid cleaning silicon chip of fluoric acid and hydrochloric acid, the concentration of Fluohydric acid. is 2.5%-5%, and the concentration of hydrochloric acid is 5%-10%.
5. as claimed in claim 1 a kind of preparation method of crystal silicon solar batteries, it is characterised in that the step 4 is adopted
The method deposited silicon nitride antireflective film of PECVD, the refractive index of silicon nitride anti-reflection film is 2.0-2.5, and thickness is 50nm-100nm.
6. a kind of crystal silicon solar batteries, it is characterised in that its preparation method by described in any one of claim 1-5 is obtained.
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| CN109308998A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Silicon wafer laser texturing process |
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