CN109308998A - Silicon wafer laser texturing process - Google Patents
Silicon wafer laser texturing process Download PDFInfo
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- CN109308998A CN109308998A CN201710615674.6A CN201710615674A CN109308998A CN 109308998 A CN109308998 A CN 109308998A CN 201710615674 A CN201710615674 A CN 201710615674A CN 109308998 A CN109308998 A CN 109308998A
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- silicon wafer
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- etching
- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 137
- 239000010703 silicon Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000008569 process Effects 0.000 title claims abstract description 29
- 238000004140 cleaning Methods 0.000 claims abstract description 50
- 239000011521 glass Substances 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 14
- 238000002791 soaking Methods 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims description 38
- 235000008216 herbs Nutrition 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 19
- 230000003628 erosive effect Effects 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 238000012805 post-processing Methods 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 13
- 239000011574 phosphorus Substances 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000036541 health Effects 0.000 abstract description 4
- 239000002341 toxic gas Substances 0.000 abstract description 4
- 239000005388 borosilicate glass Substances 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 11
- 239000005297 pyrex Substances 0.000 description 11
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a laser texturing process for a silicon wafer, which comprises the steps of removing phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion by adopting glass corrosive liquid; laser double-sided texturing: scanning the cleaned silicon wafer on the surface of the silicon wafer by using laser; cleaning after texturing: and soaking and cleaning by adopting an acid solution, and performing two-stage overflow cleaning and spin-drying after the acid solution cleaning. The invention has the beneficial effects that the phosphorus and borosilicate glass on the surface of the silicon wafer after diffusion treatment is removed by adopting the glass corrosive liquid which is prepared according to a certain proportion, so that the preparation is prepared for laser texturing, and the laser texturing process is adopted, so that the manufacturing process is simple, convenient and quick; toxic gas is not generated in the texturing process, so that adverse effects on the physical health of workers and the environment are avoided; the method can greatly improve the speed of the process and has good industrialization prospect; and through laser texturing, uneven molten polycrystalline silicon is formed on the surface of a smooth silicon wafer, so that the roughness of the surface of the silicon wafer is improved.
Description
Technical field
The invention belongs to silicon wafer to manufacture technical fields, more particularly, to a kind of silicon wafer laser process for etching.
Background technique
With the development of semiconductor technology, the requirement to semiconductor surface passivation is higher and higher, as passivating material, should have
Standby good electric property, reliability, good chemical stability, operability and economy.According to above-mentioned requirements, partly lead
Body is passivated special glass and starts to apply in semicon industry as a kind of ideal semiconductor passivation material.Using partly leading
The chip of body passivation special glass production is known as glassivation chip (Glass passivation process Chip), i.e.,
GPP chip.
Currently, the method that silicon wafer wool making used in GPP chip uses in industry is passed through for dry method sanding making herbs into wool using quartz sand
High speed ejection is crossed, is polished silicon chip surface, so that silicon chip surface roughness increases.But using dry method sanding technique system
Suede have it is apparent the disadvantage is that, using the silicon wafer of dry method sanding making herbs into wool, silicon wafer stress is larger, so that silicon wafer is easily broken, and makes
Suede effect is unobvious, and roughness is smaller, and process flow is complicated, and input cost is larger.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of silicon wafer laser process for etching, using the glass configured by a certain percentage
Phosphorus, the Pyrex of corrosive liquid removal diffusion post-processing silicon chip surface, using laser process for etching, manufacturing process is easy to be fast
It is prompt；Toxic gas will not be generated during making herbs into wool, avoid health and environment the bring adverse effect to worker；It is logical
Laser making herbs into wool is crossed, rough melting polysilicon is formed in smooth silicon chip surface, the roughness of silicon chip surface is improved, after being
The spraying of protective glue provides biggish adhesive force in the continuous blunt technique of silicon wafer glass.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of silicon wafer laser process for etching, including such as
Lower step:
1) forming layer after the diffusion of removal silicon chip surface: expanded using the silicon chip surface that glass erosion liquid removes diffusion post-processing
Forming layer and cleaning after dissipating；
2) laser making herbs into wool: the silicon wafer after cleaning carries out full sheet scanning in silicon chip surface using laser.
Further, step 2) laser making herbs into wool specific steps are as follows: using laser to one of the silicon wafer after the cleaning
Surface is scanned comprehensively, after the completion of scanning, is scanned comprehensively to another surface of silicon wafer.
Further, step 1) includes the following steps:
A. the silicon wafer after spreading is immersed in glass erosion liquid；
B. the silicon wafer after impregnating is cleaned by ultrasonic；
C. the silicon wafer after being cleaned by ultrasonic carries out water cleaning；
D. the silicon wafer after spilling water cleaning carries out nitric acid cleaning；
E. the silicon wafer after nitric acid cleaning carries out water cleaning；
F. the silicon wafer after spilling water cleaning is dried.
Further, in step A glass erosion liquid be the hydrofluoric acid ammonium being mixed in a certain ratio, it is oxalic acid, ammonium sulfate, sweet
Oil, barium sulfate and hot pure water.
Further, it is 20-30%:10-20%:10-20%:0-10%:20- that certain proportion, which is according to weight ratio,
The ratio of 30%:10-20% mixed.
Further, ultrasonic cleaning described in step B is primary ultrasonic cleaning.
Further, the cleaning in step C is the cleaning of level-one spilling water.
Further, the water cleaning in step E is that level Four spilling water cleans.
Further, further include cleaning after making herbs into wool: it is clear to carry out water using acid solution soaking and washing, after the acid solution cleaning
It washes and dries, the water cleaning is that two-stage spilling water cleans.
Further, acid solution is hydrofluoric acid solution.
The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, using configuring by a certain percentage
Glass erosion liquid removal diffusion post-processing silicon chip surface phosphorus, Pyrex, be ready for laser making herbs into wool, using laser
Process for etching, manufacturing process is simple and efficient, and is not limited by use environment；Toxic gas will not be generated during making herbs into wool,
Avoid health and environment the bring adverse effect to worker；Its speed that can greatly promote technical process has very
Good industrialization prospect；By laser making herbs into wool, rough melting polysilicon is formed in smooth silicon chip surface, improves silicon wafer
The roughness on surface, the spraying for the blunt technique protective glue of subsequent silicon wafer glass provides melt surface, so that protective glue is not easily to fall off, tool
There is biggish adhesive force；Using laser making herbs into wool, making herbs into wool step is simple, and equipment input cost is few.
Detailed description of the invention
Fig. 1 is process flow chart of the invention；
Specific embodiment
The present invention is described further in the following with reference to the drawings and specific embodiments.
As shown in Figure 1, including the following steps: the present invention relates to a kind of silicon wafer laser process for etching
1) forming layer of silicon chip surface after removal is spread: silicon chip surface forms one layer of forming layer after diffusion, which is
Phosphorus, Pyrex are removed phosphorus, the Pyrex of the silicon chip surface of diffusion post-processing using glass erosion liquid, utilize glass corrosion
Phosphorus, the Pyrex that liquid is formed after spreading silicon wafer liquid state diffusion source erode, and prepare for the making herbs into wool of next step laser, specific to wrap
Include following steps:
A. the silicon wafer after diffusion is immersed in glass erosion liquid, soaking time 0.5-4h, the silicon wafer after removal diffusion
Phosphorus, the Pyrex on surface, the glass erosion liquid are hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, the sulphur being mixed in a certain ratio
Sour barium and hot pure water, the mixed proportion are that ratio by weight is 20-30%:10-20%:10-20%:0-10%:20-30%:
The ratio of 10-20% is mixed.
B. the silicon wafer after impregnating glass erosion liquid is cleaned by ultrasonic, and the glass erosion liquid of silicon chip surface is removed, meanwhile, make
Phosphorus, the Pyrex for obtaining silicon chip surface react incomplete phosphorus, Pyrex with glass erosion liquid and are got rid of by ultrasonic wave, this
In ultrasonic cleaning be the silicon wafer after immersion corrosion liquid is once cleaned by ultrasonic, the time of ultrasonic cleaning is generally 5-
30min；
C. the silicon wafer after being cleaned by ultrasonic carries out water cleaning, further may remaining glass erosion liquid cleaning by silicon chip surface
Fall, only carries out a spilling water cleaning here, that is, the silicon wafer after ultrasonic cleaning is put and is once washed by water in the sink, is washed by water
It afterwards and takes out, the time of spilling water cleaning is generally 5-30min；
D. the silicon wafer after the spilling water cleaning in previous step is subjected to nitric acid cleaning, further gets rid of the residual of silicon chip surface
The impurity stayed, that is, silicon wafer is put into nitric acid and is cleaned, the time of nitric acid cleaning is generally 5-30min；
E. the silicon wafer after nitric acid being cleaned carries out water cleaning, and the nitric acid of the silicon chip surface in previous step is diluted clearly
It washes away and removes, the silicon wafer after pernitric acid cleans is subjected to four spilling water cleanings here, that is, successively by the silicon wafer cleaned through pernitric acid
It is put into four sinks and washes by water, the time of level Four spilling water cleaning is generally 5-30min；
F. the silicon wafer application dryer after spilling water being cleaned dries.
2) laser making herbs into wool: laser making herbs into wool here is to carry out laser making herbs into wool respectively on silicon wafer two sides, and the silicon wafer after cleaning makes
Full sheet scanning, specific steps are carried out in silicon chip surface with laser are as follows: the silicon wafer after cleaning is placed in the workbench of laser
On, silicon chip surface is scanned using laser, when which is scanned, the laser beam of laser from left to right into
The scanning of row straight linear, and the laser beam is successively to carry out straight linear scanning from top to bottom on the surface of silicon wafer, it will be entire
Silicon chip surface all scanning one times, it is, laser device laser light beam is formed laser beam when silicon chip surface is scanned
Spot diameter control at 10-80 μm, straight linear scanning is first carried out in silicon chip surface transverse direction, a transversal scanning is complete
Cheng Hou, laser beam moves down, and then the transverse direction for having scanned completion continues lateral straight linear scanning, it is, swashing
Light light beam successively carries out multiple transversal scanning in a longitudinal direction, forms scanning track together in silicon chip surface；Silicon wafer
After the completion of the one side scanning therein of surface, silicon wafer is subjected to turn-over, making herbs into wool is scanned to the another side of silicon wafer, it is, silicon
Piece two sides all carries out laser scanning, carries out two-sided making herbs into wool to silicon wafer.
The principle of laser making herbs into wool is: laser beam is radiated on silicon wafer, due to the high temperature action of the hot spot of laser beam, silicon
Piece surface due to laser beam high temperature action so that silicon chip surface generate melting state, wait it is scanned after, through being subcooled
But, the polysilicon crystal of melting is formed in silicon chip surface.
For silicon wafer when by laser scanning, the laser beam of laser converges in laser surface, since the high temperature of laser is made
With so that silicon chip surface, there is a phenomenon where melting, after the light beam of laser is scanned, silicon chip surface molten condition is through supercooling shape
At melting polysilicon, so that rough melting polysilicon is made in silicon chip surface, so that silicon wafer table after silicon wafer is scanned
The roughness in face increases, and coating basis is provided for the coating of protective glue in the blunt technique of the subsequent glass of silicon wafer, so that protective glue is applying
Adhesive force increases when covering, not easily to fall off.
Silicon wafer passes through laser scanning, and silicon chip surface forms the state of melting due to high temperature action, so that the removal amount of silicon wafer
Reach 4-5 μm, the monocrystalline silicon of entire silicon chip surface is all passed through into laser, rough melting polysilicon is made.Meanwhile laser
Scanning can also remove the phosphorus not removed by glass erosion liquid, the Pyrex of silicon chip surface.
When laser scanning, laser used is infrared laser, is also possible to other lasers, can be according to production need
It asks and is selected, and the laser frequency of the laser is 0.1MHz-1MHz, power 10-50W, the scanning speed of laser is 3-
Rough surface is made in smooth silicon chip surface by 40m/s, so that silicon chip surface roughness is improved by 0.3m to 0.5-1.5 μm；And
Silicon wafer is placed on the workbench of laser by silicon wafer when carrying out laser scanning, silicon wafer fixation is put well, and silicon wafer is placed
At normal temperatures and pressures, it places in air, silicon chip surface is scanned using laser, it is, silicon wafer application laser is swept
It retouches not by environmental restrictions, so that silicon wafer wool making technique is simplified, reduces equipment investment, and make silicon wafer wool making technique simple
Single, easy to operate, making herbs into wool is simple.
3) it is cleaned after making herbs into wool: using acid solution soaking and washing, the cleaning of two-stage spilling water is carried out after acid solution cleaning and is dried, this
In the acid solution applied be hydrofluoric acid solution, the purpose cleaned here is by the impurity of the generation of the silicon chip surface Jing Guo laser scanning
It washes.
After laser process for etching, two surfaces of silicon wafer are attached with one layer of rough polysilicon respectively, form one
Kind surface is attached with the monocrystalline silicon piece of polysilicon.
By above-mentioned steps, the phosphorus of the silicon chip surface of diffusion post-processing, Pyrex utilization are configured by a certain percentage
After glass erosion liquid removal, and making herbs into wool is carried out to silicon chip surface with the method for laser making herbs into wool, after making herbs into wool to silicon chip surface into
Row roughness test, result are that silicon chip surface roughness is 0.3m before making herbs into wool, and silicon chip surface roughness is 0.5-1.5 μ after making herbs into wool
M, it is known that making herbs into wool effect is obvious, and silicon chip surface roughness is uniformly that the coating of the protective glue of the subsequent blunt technique of silicon wafer glass is done
It is good to prepare.
The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, using configuring by a certain percentage
Glass erosion liquid removal diffusion post-processing silicon chip surface phosphorus, Pyrex, be ready for laser making herbs into wool, using laser
Process for etching, manufacturing process is simple and efficient, and is not limited by use environment；Toxic gas will not be generated during making herbs into wool,
Avoid health and environment the bring adverse effect to worker；Its speed that can greatly promote technical process has very
Good industrialization prospect；By laser making herbs into wool, rough melting polysilicon is formed in smooth silicon chip surface, improves silicon wafer
The roughness on surface, the spraying for the blunt technique protective glue of subsequent silicon wafer glass provides melt surface, so that protective glue is not easily to fall off, tool
There is biggish adhesive force；Using laser making herbs into wool, making herbs into wool step is simple, and equipment input cost is few.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (10)
1. a kind of silicon wafer laser process for etching, characterized by the following steps:
1) forming layer after the diffusion of removal silicon chip surface: after the silicon chip surface diffusion for removing diffusion post-processing using glass erosion liquid
Forming layer and cleaning；
2) laser making herbs into wool: the silicon wafer after cleaning carries out full sheet scanning in silicon chip surface using laser.
2. a kind of silicon wafer laser process for etching according to claim 1, it is characterised in that: step 2) the laser making herbs into wool tool
Body step are as follows: scanned comprehensively using a surface of the laser to the silicon wafer after the cleaning, after the completion of scanning, to described
It is scanned comprehensively on another surface of silicon wafer.
3. a kind of silicon wafer laser process for etching according to claim 1 or 2, it is characterised in that: the step 1) includes such as
Lower step:
A. the silicon wafer after spreading is immersed in the glass erosion liquid；
B. the silicon wafer after impregnating is cleaned by ultrasonic；
C. the silicon wafer after being cleaned by ultrasonic carries out water cleaning；
D. the silicon wafer after spilling water cleaning carries out nitric acid cleaning；
E. the silicon wafer after nitric acid cleaning carries out water cleaning；
F. the silicon wafer after spilling water cleaning is dried.
4. a kind of silicon wafer laser process for etching according to claim 3, it is characterised in that: glass described in the step A
Glass corrosive liquid is hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, barium sulfate and the hot pure water being mixed in a certain ratio.
5. a kind of silicon wafer laser process for etching according to claim 4, it is characterised in that: the certain proportion is according to weight
Amount ratio is that the ratio of 20-30%:10-20%:10-20%:0-10%:20-30%:10-20% mixed.
6. according to a kind of described in any item silicon wafer laser process for etching of claim 3-5, it is characterised in that: in the step B
The ultrasonic cleaning is primary ultrasonic cleaning.
7. according to a kind of described in any item silicon wafer laser process for etching of claim 3-6, it is characterised in that: in the step C
Cleaning be level-one spilling water cleaning.
8. according to a kind of described in any item silicon wafer laser process for etching of claim 3-7, it is characterised in that: in the step E
Water cleaning be level Four spilling water clean.
9. a kind of silicon wafer laser process for etching according to claim 1-8, it is characterised in that: after further including making herbs into wool
Cleaning: acid solution soaking and washing is used, water cleaning is carried out after the acid solution cleaning and dries, the water cleaning is two-stage spilling water
Cleaning.
10. a kind of silicon wafer laser process for etching according to claim 9, it is characterised in that: the acid solution is hydrogen fluorine
Acid solution.
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| CN201710615674.6A CN109308998A (en) | 2017-07-26 | 2017-07-26 | Silicon wafer laser texturing process |
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| CN201710615674.6A CN109308998A (en) | 2017-07-26 | 2017-07-26 | Silicon wafer laser texturing process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115591855A (en) * | 2022-10-13 | 2023-01-13 | 中科九微科技有限公司（Cn） | Ultra-high cleanliness cleaning method for semiconductor parts |
| TWI858549B (en) | 2022-12-07 | 2024-10-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Single crystal silicon wafer processing method and device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8309389B1 (en) * | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| CN103227237A (en) * | 2013-03-15 | 2013-07-31 | 北京工业大学 | Laser one-step forming method for surface nap layer and isolation layer of crystalline silicon solar cell |
| CN104362219A (en) * | 2014-11-06 | 2015-02-18 | 天威新能源控股有限公司 | Crystalline solar cell production process |
| CN105047764A (en) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | Silicon chip texturing method |
| CN105244417A (en) * | 2015-11-04 | 2016-01-13 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar cell and preparation method thereof |
| CN106252462A (en) * | 2016-08-29 | 2016-12-21 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of laser SE battery |
-
2017
- 2017-07-26 CN CN201710615674.6A patent/CN109308998A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8309389B1 (en) * | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| CN103227237A (en) * | 2013-03-15 | 2013-07-31 | 北京工业大学 | Laser one-step forming method for surface nap layer and isolation layer of crystalline silicon solar cell |
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| CN106252462A (en) * | 2016-08-29 | 2016-12-21 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of laser SE battery |
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