CN109427930A - A method of flannelette is selectively prepared on crystal silicon chip surface - Google Patents
A method of flannelette is selectively prepared on crystal silicon chip surface Download PDFInfo
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- CN109427930A CN109427930A CN201710787717.9A CN201710787717A CN109427930A CN 109427930 A CN109427930 A CN 109427930A CN 201710787717 A CN201710787717 A CN 201710787717A CN 109427930 A CN109427930 A CN 109427930A
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- crystal silicon
- silicon chip
- flannelette
- chip surface
- chemical solution
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 235
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 233
- 239000010703 silicon Substances 0.000 title claims abstract description 233
- 239000013078 crystal Substances 0.000 title claims abstract description 201
- 238000000034 method Methods 0.000 title claims abstract description 113
- 239000000654 additive Substances 0.000 claims abstract description 140
- 230000000996 additive effect Effects 0.000 claims abstract description 130
- 239000000126 substance Substances 0.000 claims abstract description 128
- 230000007797 corrosion Effects 0.000 claims abstract description 87
- 238000005260 corrosion Methods 0.000 claims abstract description 87
- 210000002268 wool Anatomy 0.000 claims abstract description 50
- 235000008216 herbs Nutrition 0.000 claims abstract description 48
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 7
- 238000007654 immersion Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 52
- 238000005530 etching Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000012670 alkaline solution Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- -1 tetramethyl aqua ammonia Chemical compound 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
Implement the method that chemical solution corrosion prepares flannelette on crystal silicon chip surface the invention discloses a kind of.It is disclosed in this invention to implement the chemical solution corrosion method for preparing flannelette on crystal silicon chip surface and be, it is different in chemical attack making herbs into wool solution from generally use at present flocking additive is added directly into, but before implementing chemical solution corrosion to crystal silicon chip and preparing flannelette step, flocking additive is coated on needs by the crystal silicon chip surface of making herbs into wool.The flocking additive being coated on crystal silicon chip surface does not react with crystal silicon chip, the crystal silicon chip surface for being coated with chemical attack solution-wet by flocking additive, implements the step of chemical attack prepares flannelette to the surface of the crystal silicon chip.
Description
Technical field
The present invention is the technology in relation to preparing solar battery, more particularly in crystal silicon chip surface chemistry solution corrosion
The method for preparing flannelette.The method for preparing flannelette in crystal silicon chip surface chemistry solution corrosion of the invention has the property of can choose
Implementing the characteristics of chemical solution corrosion prepares flannelette in some particular areas on crystal silicon chip surface, is being particularly suitable for high in preparation
It is applied on the solar battery of photoelectric conversion efficiency.
Background technique
The flannelette on crystal silicon chip surface plays a significant role in the photoelectric conversion efficiency for improving solar battery.It is so-called
Flannelette, which refers to, is formed by a series of regular or random height difference and surface of different sizes on crystal silicon chip surface
Shape.After sunlight is incident on the crystal silicon chip surface with flannelette, reflected light can be in the suede on crystal silicon chip surface
The effect of secondary or multiple incidence is generated between face.In other words, solar battery can be improved in the flannelette on crystal silicon chip surface
Absorption to sunlight, to improve the photoelectric conversion efficiency of crystal silicon solar energy battery.
There are many ways to crystal silicon chip surface prepares flannelette, such as chemical solution corrodes etching method, and plasma is carved
Lose etching method and laser ablation etching method etc..It is most widely used in the industrial production to prepare suede on crystal silicon chip surface
The method in face is the method that chemical solution corrosion crystal silicon chip surface prepares flannelette, i.e. chemical solution corrodes etching method.It is so-called
Chemical solution corrosion etching method be by chemical solution corrode crystalline silicon method, surface of crystalline silicon generate flannelette.Example
Such as, the flannelette of monocrystalline silicon sheet surface generates after corroding monocrystalline silicon piece generally by alkaline chemical solution, and polysilicon chip table
What the flannelette in face was formed after corroding generally by acid solution.
It in the industrial production, generally can be in alkali electroless etchant solution in order to improve the quality of crystal silicon chip surface flannelette
In, or various flocking additives are added in acidic chemical etchant solution.For example, EP0477424A1 discloses a kind of alkalinity
The flocking additive of polyglycol solution helps to produce after being added to this flocking additive in chemical attack making herbs into wool solution
Raw flannelette size is small and uniform flannelette.CN2011102128769 discloses another flocking additive, which is added
After agent is added to acidic chemical corrosion liquor, polysilicon chip passes through the chemical attack solution corrosion containing the flocking additive,
It can be in the smaller flannelette more evenly of polysilicon chip Surface Creation.In the making herbs into wool of large-scale production crystal silicon solar energy battery at present
In step, various types of flocking additives are by universal use.
Although the flannelette quality on crystal silicon chip surface has significant raising after having used various flocking additives,
It is that the stability of the flannelette quality of every batch of still has biggish fluctuation.The reason is that crystal silicon chip surface is in chemical solution
Flannelette quality after corrosion making herbs into wool depends not only on flocking additive, also related with other making herbs into wool conditions.For example, since making herbs into wool adds
The content of effective content and corrosion product sodium metasilicate of the agent in etchant solution is added to react constantly variation, crystal silicon chip with making herbs into wool
The flannelette quality on surface also changes therewith.In order to guarantee the stabilization of flannelette quality, in making herbs into wool production, it is necessary to according to every batch of
The concrete condition of making herbs into wool result, is constantly adjusted process for etching.It is difficult that this not only causes making herbs into wool production operation, and not
The consistency of crystal silicon chip surface flannelette after being able to maintain every batch of making herbs into wool is unfavorable for the stability of production.
As the research of photoelectric conversion efficiency for improving crystal silicon solar energy battery deepens continuously, to process for etching it is also proposed that
New challenge.For example, the study found that if only to the light-receiving surface of crystal silicon solar energy battery or crystal silicon solar electricity
The main light-receiving surface in pond implements process for etching, and keeps a flat surface on its another surface, and the crystalline silicon can be improved too
The photoelectric conversion efficiency of positive energy battery.There is flannelette to reach a surface of crystal silicon chip, another surface is in smooth surface
Effect, current way be first two surfaces of crystal silicon chip simultaneously making herbs into wool, then one of surface is done again
Polishing treatment.Obviously such a process increases the triviality of production.
Summary of the invention
For the defect of the above prior art, the invention discloses a kind of crystal silicon chip surface chemistry corrosion to prepare flannelette
Method.
An object of the present invention is to seek a kind of method for preparing flannelette in crystal silicon chip surface chemistry solution corrosion, should
Method can improve the stability of process for etching.
Another object of the present invention is to seek a kind of method for preparing flannelette in crystal silicon chip surface chemistry solution corrosion,
This method can satisfy the requirement for preparing high performance solar batteries, both can implement selective making herbs into wool on the surface of crystal silicon chip.
Final object of the present invention is to seek a kind of side that flannelette is prepared in crystal silicon chip surface chemistry solution corrosion
Method, this method can be applied in the production of all crystal silicon solar energy batteries, including monocrystaline silicon solar cell, quasi-monocrystalline silicon
Solar battery, polysilicon solar cell, N-shaped crystal silicon solar energy battery and p-type crystal silicon solar energy battery, expand this hair
Bright application range.
To achieve the goals above, implement chemical solution corrosion on crystal silicon chip surface the invention discloses one kind and prepare suede
The method in face.It is disclosed in this invention to implement the chemical solution corrosion method for preparing flannelette on crystal silicon chip surface and be, and it is current
Flocking additive being added directly into chemical attack making herbs into wool solution for generalling use is different, but to crystal silicon chip implementationization
Before solution corrosion prepares flannelette step, flocking additive is coated on needs by the crystal silicon chip surface of making herbs into wool.In crystalline substance
The flocking additive being coated on body silicon chip surface does not react with crystal silicon chip, is then made chemical attack solution-wet
The step of chemical attack prepares flannelette is implemented to the surface of the crystal silicon chip in the crystal silicon chip surface of suede additive-coated.
It is of the invention it is a kind of crystal silicon chip surface implement chemical solution corrosion prepare flannelette method the following steps are included:
1) flocking additive is coated on the crystal silicon chip surface for needing to prepare flannelette；
2) the crystal silicon chip surface for being applied flocking additive is contacted with chemical attack solution, implements chemistry to crystal silicon chip surface
Solution corrosion prepares flannelette.
Flocking additive of the present invention is apparently not the reactant of chemical attack solution corrosion silicon wafer, in other words, this
The invention flocking additive is not present in the reaction equation of chemical attack solution corrosion silicon wafer.Such as it is molten in caustic corrosion
Hydroxide ion (OH in liquid reaction-), the hydrofluoric acid (HF) in acid etching solution reaction, various oxidation (nitric acid, hydrogen peroxide
Deng) and metal inducement corrosion reaction in various metallic elements belong to the reactant of chemical attack solution corrosion silicon wafer, do not belong to
In flocking additive scope of the invention.
Flocking additive of the present invention is often also referred to as making herbs into wool promotor or other titles.It is of the present invention
The effect of flocking additive be improve crystal silicon chip surface flannelette generated uniformity and reduce reflectivity.Into one
Step, other effects of flocking additive of the present invention further include that can shorten in the crystal silicon chip surface wool manufacturing time, are reduced
Chemicals usage reduces chemicals cost, and improves the stability etc. of production.
Of the invention is the advantages of crystal silicon chip surface chemistry corrosion prepares the method for flannelette, due to crystal silicon chip
Surface implements to be coated directly on the surface of crystal silicon chip flocking additive before chemical attack prepares flannelette, thus with
In the step of chemical attack afterwards prepares flannelette, the flocking additive that is applied can directly generate and rapidly in surface of crystalline silicon
Ground plays the role of promoting making herbs into wool, efficiently utilizes flocking additive.
During the implementation chemical attack of crystal silicon chip surface prepares flannelette, in crystal silicon chip surface flannelette matter generated
Amount and concentration of the flannelette uniformity with flocking additive on crystal silicon chip surface are related.Since crystal silicon chip of the invention comes to the surface
Learning the method that corrosion prepares flannelette is flocking additive to be coated on crystal silicon chip surface, therefore implementing crystalline silicon of the invention
Piece surface chemistry corrosion is prepared in the making herbs into wool step of flannelette method, easily can be maintained at all in entire production process
Crystal silicon chip surface flocking additive concentration it is consistent, provide guarantee for steady production.
In some cases, flocking additive is easy to fail in some chemical attack solution, can thus make making herbs into wool
The usage amount of additive is excessive, causes to produce the unstable and excessively high disadvantage of production cost.Therefore another advantage of the present invention
It is that, since the present invention flocking additive is not added in chemical attack solution directly, can ensure that each crystalline silicon in this way
There are the flocking additives of same concentrations on the surface of piece, it is ensured that production stability.
Since the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette is that flocking additive is coated on crystalline substance
The surface of body silicon wafer can be accessed chemical attack in crystal silicon chip in the reaction of crystal silicon chip Surface Creation flannelette and prepare suede
The instantaneous generation of the solution in face, therefore crystal silicon chip surface chemistry corrosion of the invention prepares another advantage of method of flannelette and is
The crystal silicon chip amount of being corroded can be reduced.Reduce Reducing thickness of crystal silicon chip during chemical attack prepares flannelette, that is,
Reduce the consumption of chemicals in etchant solution, reduces the production cost of making herbs into wool step.Shortening chemical attack prepares suede simultaneously
The time in face increases the production capacity of equipment, reduces equipment investment cost in other words.
The outstanding advantages of the preparation method of crystal silicon solar energy battery flannelette of the invention are, method of the invention can be
Flannelette is generated in the local surface area of crystal silicon chip, and does not generate flannelette on other surface areas.Since the present invention is system
Suede additive is coated directly on the surface of crystal silicon chip, and the effect of flocking additive can be in the crystalline substance for being applied flocking additive
It on the area of body silicon wafer, plays a role rapidly in the step of chemical attack prepares flannelette, is quickly generated flannelette on the area.
And on the area for not being applied flocking additive, the generation of flannelette very slowly will reach topochemistry corrosion preparation
The effect of flannelette.For example, can easily realize the purpose in the one of surface wool manufacturing of crystal silicon chip using the present invention, i.e.,
Achieve the purpose that one texture-etching side.
It is of the invention further advantages in that, the method that chemical attack of the invention prepares flannelette can expand flocking additive
Range of choice.For example, some flocking additives have the solubility in the chemical attack solution that chemical attack prepares flannelette small
The problem of, the effect of its flocking additive cannot be played in the chemical attack solution.Due to crystal silicon chip surface of the invention
The method for preparing flannelette is not added to flocking additive in the chemical attack solution, as long as such flocking additive can be uniformly
Be covered on crystal silicon chip surface, these flocking additives in the step of chemical attack of the invention prepares flannelette can very well
Play a role.For another example the chemical solution that some flocking additives and chemical attack prepare flannelette can react quickly and
Lose the effect of flocking additive.After method of the invention, these flocking additives prepare the step of flannelette in chemical attack
Play a role rapidly in rapid, as long as therefore these flocking additives and chemical attack prepare the reaction time of the chemical solution of flannelette
Longer than the making herbs into wool time, these flocking additives remain to play system well in the method that chemical attack of the invention prepares flannelette
Suede facilitation.
Detailed description of the invention
Fig. 1 present invention impregnates the schematic diagram of coating flocking additive.
The schematic diagram of Fig. 2 spraying coating flocking additive of the present invention.
Specific embodiment
Referring to attached drawing, the present invention can be described in further details.Obviously, these explanations are not meant to limit this hair
It is bright.Under without departing substantially from spirit of that invention and its real situation, those skilled in the art can make various other according to the present invention
Corresponding combination, change or modification.These are combined accordingly, and change and modification belong to the protection of appended claims of the present invention
In range.
The method for preparing flannelette in crystal silicon chip surface chemistry corrosion of the invention be before chemical attack prepares flannelette,
First flocking additive is coated on the surface for needing to be produced the crystal silicon chip of flannelette.In some embodiments, it is coated with making herbs into wool
The mode of additive can be immersion coating flocking additive.In the step of infusion method is coated with flocking additive, referring to Fig.1,
Flocking additive 30 is poured into flocking additive slot 20, crystal silicon chip 10 is put into flocking additive slot 20, makes flocking additive
30 flood and soak 10 surface of crystal silicon chip.In this way, after crystal silicon chip 10 is moved out of flocking additive slot 20, making herbs into wool addition
Agent 30 is just coated on the surface of crystal silicon chip 10.The method for preparing flannelette in crystal silicon chip surface chemistry corrosion of the invention
Immersion coating flocking additive step can be attached vertical immersion shown in FIG. 1, can also be real using the method for horizontal immersion
Apply coating flocking additive step of the invention.
It, can in some other embodiment of the method for the invention for preparing flannelette in crystal silicon chip surface chemistry corrosion
Using the method that flocking additive 30 is sprayed on crystal silicon chip surface.Referring to Fig. 2, flocking additive 30 is placed on making herbs into wool
In additive tank 20, flocking additive 20 is sprayed on by flocking additive spray head 40 by liquid level difference or pressure difference by crystal
The surface of silicon wafer 10.In some embodiments, flocking additive spray head 40 can be by one or more hole or spray head
It is formed.It is uniform in order to reach in the embodiment for the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette
The purpose of coating can move crystal silicon chip 10 when spraying flocking additive, can also move flocking additive spray head 40.
It, can in some other embodiment of the method for the invention for preparing flannelette in crystal silicon chip surface chemistry corrosion
Flocking additive 30 is coated on crystal silicon chip surface using the method for spin coating.Using the method for spin coating flocking additive 30
The advantages of being coated on crystal silicon chip surface is that flocking additive 30 can be uniformly coated to crystal silicon chip surface.Spin coating method
Another advantage be that the flocking additive being applied can be made in the comparison of crystal silicon chip dry tack free after spin coating
Fastly.
In some other embodiment, other coating methods can be used to implement coating additive step of the invention,
It is, for example, possible to use method for printing screen to be coated on crystal silicon chip surface flocking additive.Ultrasonic atomization can also be used
Flocking additive 30 is coated on crystal silicon chip surface by the method for flocking additive 30.Using the method for ultrasonic atomization making herbs into wool
Additive 30, which is coated on surface of crystalline silicon, can be improved the utilization rate of flocking additive 30, but also coating making herbs into wool can be improved and add
Add the uniformity of agent 30.
The flocking additive 30 for preparing the method for flannelette in crystal silicon chip surface chemistry corrosion of the invention can be various
It can promote the compound of flannelette required for generating in surface of crystalline silicon.In flocking additive, contain one or moreization
Close object.The effect of additive is to be easier to control making herbs into wool process；Make prepared flannelette size more evenly；Flannelette size is more
It is small；The reflectivity of crystal silicon chip is lower；The condition of making herbs into wool production is easier to control and stablizes；Be more advantageous to surface clean.Always
It, flocking additive is a kind of mixture of one or more compounds that can improve making herbs into wool effect and making herbs into wool process.Or
It says, flocking additive is a kind of flannelette quality for helping to improve surface of crystalline silicon, such as can reduce flannelette size, improves suede
Surface uniformity facilitates making herbs into wool production with the compound or one kind for reducing reflectivity etc., such as can shorten the making herbs into wool time,
Chemicals usage is reduced, chemicals cost is reduced, and the compound of stability for improving production etc..
It is of the invention to be coated with making herbs into wool on crystal silicon chip surface what crystal silicon chip surface chemistry corrosion prepared the method for flannelette
Additive step, which can be, is coated with a kind of flocking additive.In other applications, it can be the making herbs into wool for being coated with more than one
Additive.For example, needing some special compounds that flocking additive is adsorbed on crystal silicon chip in some applications of the invention
Surface, it is ensured that flocking additive can play the effect of its flocking additive when chemical solution corrodes crystalline silicon to the greatest extent.
In these applications of the invention, it is necessary to be coated with two or more flocking additive.When being coated with more than one making herbs into wool
When additive, the step of can be more than one coating flocking additive the step of being coated with additive.
The method for preparing flannelette in crystal silicon chip surface chemistry corrosion of the invention is suitable for all types of crystal silicon chips,
Such as monocrystalline silicon silicon wafer, polysilicon silicon wafer and casting single crystal silicon wafer.Further, the silicon wafer of these types can be p-type silicon chip,
Such as boron doped silicon wafer, it is also possible to n-type silicon chip, such as the silicon wafer of phosphorus doping.
The coating flocking additive step of the method for flannelette is prepared in implementation crystal silicon chip surface chemistry corrosion of the invention
Crystal silicon chip 10 can be original silicon chip, such as the original silicon chip directly bought from silicon wafer supplier.In these original silicon chips
Surface not only remain the generated damaging layer in cutting process, but also may be more or less remain it is some not
The chemical pollutant cleaned up, such as cutting lubricant etc..
In some embodiments of the present invention, crystal silicon chip 10 can be the original silicon chip after chemical pretreatment.
For example, bubble at the beginning of original silicon chip can first pass through chemistry is handled, then implement again of the invention in the corrosion of crystal silicon chip surface chemistry
Prepare the coating flocking additive step in the method for flannelette.In large-scale production practice, the purpose that chemistry just steeps silicon wafer is
The chemical pollutant remained on original silicon chip, such as some organic chemical pollutants are cleaned up.On crystal silicon chip surface
Implement chemistry before being produced flannelette and just steep step, not only may insure that the surface of crystal silicon chip does not contain after being produced flannelette
Any pollutant can more prevent to form various spots in surface of crystalline silicon.
In some other embodiment of the invention, the crystal silicon chip 10 after chemical pretreatment can be handle and cut
The damaging layer on the generated crystal silicon chip surface during cutting clean up after crystal silicon chip, i.e. original silicon chip first passes through clearly
The chemical treatment of damaging layer is washed, then implements the coating that crystal silicon chip surface chemistry corrosion of the invention prepares the method for flannelette again
Flocking additive step.The method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette is applied after having gone damaging layer
It, can be with when implementing the making herbs into wool step for the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette when crystal silicon chip
It is significantly shorter the making herbs into wool time.
In other embodiments of the invention, the crystal silicon chip 10 after chemical pretreatment be can be by chemistry
Crystal silicon chip after polishing, i.e. original silicon chip first pass through the processing of chemical polishing, then implement again of the invention in crystal silicon chip
Surface chemistry corrosion prepares the coating flocking additive step of the method for flannelette.Of the invention corrodes in crystal silicon chip surface chemistry
The method for preparing flannelette is applied in the crystal silicon chip after chemical polishing, and crystal silicon chip surface chemistry of the invention is being implemented
After corrosion prepares the making herbs into wool step of the method for flannelette, on crystal silicon chip surface can prepare flannelette size in 1 microns and
And highly uniform flannelette.
Crystal silicon chip 10 is also possible to crystal silicon chip of the original silicon chip after some physical treatments.Such as it is more in order to reduce
Surface reflectivity of the crystal silicon chip after preparing flannelette can implemented of the invention to prepare suede in crystal silicon chip surface chemistry corrosion
Laser treatment is first passed through before the coating flocking additive step of the method in face, increases the surface roughness of polysilicon chip.These
Increased surface roughness can effectively reduce reflectivity of the surface of polysilicon chip after preparing flannelette.
The coating flocking additive step of the method for flannelette is prepared in implementation crystal silicon chip surface chemistry corrosion of the invention
Crystal silicon chip 10 before can be dry such as no by any pretreated original silicon chip.Or crystal silicon chip warp
It crosses after pretreatment by dried crystal silicon chip, for example, just being steeped by chemistry and by the crystal silicon chip after drying.
In some other embodiment of the invention, suede is prepared in the crystal silicon chip surface chemistry corrosion for implementing of the invention
Crystal silicon chip 10 before the coating flocking additive step of the method in face can be wet, was both not dried by, for example, crystalline silicon
Piece directly implements crystal silicon chip surface chemistry corrosion of the invention and prepares flannelette after chemistry just steeps and deionized water is cleaned
The coating flocking additive step of method.
The advantages of crystal silicon chip surface chemistry corrosion of the invention prepares the method for flannelette first is that can be to crystal silicon chip
10 local surfaces implementation prepares flannelette.As shown in Fig. 2, crystal silicon chip 10 is passing through crystal silicon chip surface chemistry of the invention
After corrosion prepares the coating flocking additive step of the method for flannelette, flocking additive is only coated on the upper of crystal silicon chip 10
Surface.If the lower surface of crystal silicon chip 10 is no longer applied flocking additive, the crystal silicon chip of the invention of optimization comes to the surface
The process that the making herbs into wool step for learning the method that corrosion prepares flannelette can make chemical attack prepare flannelette occurs over just upper surface, i.e., only
Having has flannelette in the upper surface of crystal silicon chip 10.
Further, the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette can also be in crystal silicon chip 10
Flannelette is prepared in particular area on one of surface.For example, the present invention can only needed by the crystal silicon chip 10 of making herbs into wool
Upper surface certain areas on be coated with flocking additive 30.The crystal silicon chip surface chemistry corrosion of the invention of optimization prepares suede
The process that the making herbs into wool step of the method in face can make chemical attack prepare flannelette occurs over just those quilts of 10 upper surface of crystal silicon chip
It is coated with the area of flocking additive.
The coating flocking additive step of the method for flannelette is prepared in implementation crystal silicon chip surface chemistry corrosion of the invention
Afterwards, the chemical attack for implementing the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette prepares flannelette step.At this
In some embodiments of invention, the flocking additive 30 on 10 surface of crystal silicon chip can be first dried.In some other reality
It applies in mode, after being coated with flocking additive step, directly implements crystal silicon chip surface chemistry corrosion of the invention and prepare flannelette
The chemical attack of method prepare flannelette step.
According to the characteristic of the characteristic of crystal silicon chip 10 and flocking additive 30, required in conjunction with the difference to various flannelettes, this
The step of chemical attack for the method that the crystal silicon chip surface chemistry corrosion of invention prepares flannelette prepares flannelette can be using alkalinity
Solution implements chemical attack and prepares flannelette, can also implement chemical attack using acid solution and prepare flannelette.For example, using alkalinity
Chemical solution implements the step of chemical attack of the invention prepares flannelette to monocrystalline silicon sheet surface and quasi-monocrystalline silicon surface.At this
In the step of alkali electroless corrosion of invention prepares flannelette, inorganic base can be used, organic base can also be used.The alkalinity of optimization
Solution chemistry corrosion prepares the temperature of flannelette between 60 degrees Celsius to 100 degrees Celsius.The alkaline solution chemical attack system of optimization
Alkali concentration in the alkaline solution of standby flannelette is between 0.5% to 5%.The alkaline solution chemical attack of optimization prepares the chemistry of flannelette
Etching time is between 5 minutes to 30 minutes.
In certain embodiments of the present invention, it according to specific implementation condition, can be prepared in alkaline solution chemical attack
Various other additives are added in the alkaline solution of flannelette, such as 1% to 10% isopropanol can be added in alkaline solution.
The step of chemical attack for the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette prepares flannelette
Chemical attack can be implemented using acid solution and prepare flannelette.For example, the mixed acid solution of nitric acid and hydrofluoric acid can be used.
The step of chemical attack for the method that crystal silicon chip surface chemistry corrosion of the invention prepares flannelette prepares flannelette can
In the method for preparing flannelette using gap when slot.In the method that slot type gap prepares flannelette, crystal silicon chip 10 is usually vertical
It is immersed in chemical attack to prepare in the solution of flannelette, completes the step of chemical attack prepares flannelette.Crystal silicon chip table of the invention
The step of chemical attack that face chemical attack prepares the method for flannelette prepares flannelette can also prepare flannelette using horizontal continuity
Method.In the method for continuously preparing flannelette, crystal silicon chip 10 usually in various conveying devices, such as various idler wheels, transmission
The solution of flannelette is prepared by chemical attack down, completes the step of chemical attack prepares flannelette.
Specific embodiment
Embodiment 1
Just bubble is being implemented to original p-type monocrystalline silicon piece first, it is therefore an objective to cleaning remaining organic dirt in slice and packaging process
Contaminate object and partial injury layer.The monocrystalline silicon piece is cleaned after first bubble with deionized water, and then making herbs into wool is added using immersion process
Agent (such as alkaline polyethylene glycol) is coated on silicon chip surface, which is placed, is 80 degrees Celsius with temperature, mixed with appropriate
The sodium hydroxide chemical attack solution of the 1.5% of IPA constantly soaks silicon wafer upper surface, implements of the invention to crystal silicon chip reality
It applies chemical attack and prepares the horizontal making herbs into wool step of flannelette.After twenty minutes, of the invention that prepared by suede to crystal silicon chip implementation chemical attack
Face process finishes.It is 2 micro- in the average-size that the upper surface of the crystal silicon chip measures pyramid flannelette after cleaned and drying
Rice, upper surface average reflectance are 10.2%, and lower surface average reflectance is 20.5%.
Embodiment 2
The N-shaped monocrystalline silicon piece of diamond wire slice, using the method for inkjet printing flocking additive (such as alkaline polyethylene glycol)
On silicon wafer light-receiving area, make there is no flocking additive on the electrode area of silicon wafer, silicon wafer is put after flocking additive is dry
Entering temperature is 80 degrees Celsius, in 4% tetramethyl aqua ammonia and the mixed solution of appropriate IPA, after ten minutes, pair of the invention
Crystal silicon chip implementation chemical attack prepares flannelette process and finishes.After cleaned and drying, the quilt on the upper surface of the crystal silicon chip
Being coated with and measuring the average-size of pyramid flannelette on the area of flocking additive is 1 micron, is not being covered by flocking additive
Surface of crystalline silicon on pyramid flannelette average-size be 5 microns.
Embodiment 3
The upper surface spin coating flocking additive (for example, mixture of PEG200 and polyvinylpyrrolidone) of past p-type piece,
Implement of the invention the step of being coated with flocking additive on crystal silicon chip surface.System is applied in the upper surface of the crystal silicon chip
It is without any processing after suede additive, it is directly placed into continuous acid solution chemical attack etching device, is implemented of the invention to crystal
Silicon wafer implements the horizontal making herbs into wool step that chemical attack prepares flannelette.The condition of continuous acid solution chemical attack is hydrofluoric acid: nitric acid:
Water=1:4:3, after corrosion temperature is 5 degree, 2 minutes, of the invention to crystal silicon chip implementation chemical attack, to prepare flannelette process complete
Finish.After cleaned and drying, measuring average reflectance in the upper surface of the crystal silicon chip is 20%, the average reflectance of lower surface
It is 23%.
Embodiment 4
Using laser roughization technology then one surface roughization of original N-shaped polysilicon chip is roughened the silicon wafer
Surface implement it is of the invention on crystal silicon chip surface be coated with flocking additive the step of.In the present embodiment, it is coated with making herbs into wool
Additive is divided into two steps, triethanolamine is first coated on the crystal silicon chip surface using spraying method first, then use spraying side
Method is coated on polyvinyl alcohol on triethanolamine.After flocking additive is coated on the upper surface of the crystal silicon chip, drying, then
It is put into continuous sour fluid bowl formula chemical attack etching device, implements of the invention to implement chemical attack to crystal silicon chip and prepare flannelette
Horizontal making herbs into wool step.Contain hydrofluoric acid in the chemical attack etching device: nitric acid: water=1:4:2.5, corrosion temperature are 5 degree, 2 points
Zhong Houhou, it is of the invention chemical attack is implemented to crystal silicon chip to prepare flannelette process and finish.After cleaned and drying, in the silicon wafer
It is 15% that the surface being roughened, which measures average reflectance, and the reflectivity on another surface of the silicon wafer is 26%.
Claims (12)
1. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface, which is characterized in that this method is right
Before the implementation chemical solution corrosion of crystal silicon chip surface prepares flannelette step, flocking additive is first coated on crystal silicon chip table
Face, comprising the following steps:
(1) flocking additive is coated on crystal silicon chip surface；
(2) chemical solution corrosion is implemented to crystal silicon chip surface and prepares flannelette.
2. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claim 1,
It is characterized in that, the flocking additive effect is to prepare in flannelette step to help to improve crystalline substance in subsequent chemical solution corrosion
Body silicon chip surface flannelette quality and the flocking additive for facilitating making herbs into wool production.
3. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claims 1 and 2,
It is characterized in that, the flocking additive is at least coated on a part of surface area in crystal silicon chip all surfaces product.
4. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claims 1 and 2,
It is characterized in that, the coating flocking additive type is at least a kind of flocking additive, the application step is at least
Application step.
5. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claims 1 and 2,
It is characterized in that, the method for being coated with flocking additive on crystal silicon chip surface can be through immersion process, system
Suede additive-coated is on all crystal silicon chip surfaces；Be also possible to by spraying, spin coating and printing the methods of any one, or
Coating technique combination of the person between them, flocking additive is coated on a part of area on crystal silicon chip surface.
6. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claims 1 and 2,
It is characterized in that, described, crystal silicon chip surface is dry before implementing crystal silicon chip surface coating additive step, or
Person is not dried by.
7. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claims 1 and 2,
It is characterized in that, it is described after implementing crystal silicon chip surface coating additive step, flocking additive can be implemented dry
Dry step can not also implement drying steps to flocking additive.
8. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claim 1,
Be characterized in that, implement be coated with flocking additive step before, which can be parent crystal silicon wafer, be also possible to through
Crystal silicon chip after having crossed various pre-treatment steps, including, chemical solution prerinse, chemical solution cleans damaging layer, chemical solution
Liquid polishing, laser roughization, or mechanical roughization.
9. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claim 1,
It is characterized in that, the crystal silicon chip is the crystal silicon chip for producing solar battery.
10. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claim 1,
Be characterized in that, the chemical solution corrosion prepare flannelette be acidic chemical solution corrosion crystal silicon chip surface prepare flannelette, or
Person's alkaline chemical solution corrosion crystal silicon chip surface prepares flannelette.
11. the method that chemical solution corrosion prepares flannelette is implemented on a kind of pair of crystal silicon chip surface according to claim 10,
It is characterized in that, the additive of other types can be contained in the alkaline chemical solution and acidic chemical solution.
12. implementing the side that chemical solution corrosion prepares flannelette with a kind of pair of crystal silicon chip surface described in 10 according to claim 1
Method, which is characterized in that it is the corrosion surface of crystalline silicon preparation of slot type gap chemical solution that the chemical solution corrosion, which prepares flannelette,
Flannelette or horizontal continuity chemical solution corrosion surface of crystalline silicon prepare flannelette.
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| PCT/CN2018/098588 WO2019042084A1 (en) | 2017-09-04 | 2018-08-03 | Method for selective texture preparation on surface of crystalline silicon wafer |
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| CN113913188A (en) * | 2021-12-14 | 2022-01-11 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon texturing agent and preparation method of textured monocrystalline silicon |
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| CN115272498B (en) * | 2022-08-02 | 2023-06-09 | 新源劲吾(北京)科技有限公司 | Color photovoltaic panel surface texturing method and related equipment |
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| WO2019042084A1 (en) | 2019-03-07 |
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